TW201817087A - 各向異性導電材、電子元件、含半導體元件的結構體及電子元件的製造方法 - Google Patents

各向異性導電材、電子元件、含半導體元件的結構體及電子元件的製造方法 Download PDF

Info

Publication number
TW201817087A
TW201817087A TW106113345A TW106113345A TW201817087A TW 201817087 A TW201817087 A TW 201817087A TW 106113345 A TW106113345 A TW 106113345A TW 106113345 A TW106113345 A TW 106113345A TW 201817087 A TW201817087 A TW 201817087A
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
anisotropic conductive
region
conductive member
electronic component
Prior art date
Application number
TW106113345A
Other languages
English (en)
Chinese (zh)
Inventor
堀田吉則
山下広祐
Original Assignee
富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 富士軟片股份有限公司 filed Critical 富士軟片股份有限公司
Publication of TW201817087A publication Critical patent/TW201817087A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4922—Bases or plates or solder therefor having a heterogeneous or anisotropic structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
TW106113345A 2016-05-27 2017-04-21 各向異性導電材、電子元件、含半導體元件的結構體及電子元件的製造方法 TW201817087A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2016-106384 2016-05-27
JP2016106384 2016-05-27
JP2016-156297 2016-08-09
JP2016156297 2016-08-09

Publications (1)

Publication Number Publication Date
TW201817087A true TW201817087A (zh) 2018-05-01

Family

ID=60411231

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106113345A TW201817087A (zh) 2016-05-27 2017-04-21 各向異性導電材、電子元件、含半導體元件的結構體及電子元件的製造方法

Country Status (5)

Country Link
JP (1) JP6663487B2 (ja)
KR (1) KR102134135B1 (ja)
CN (1) CN109155259B (ja)
TW (1) TW201817087A (ja)
WO (1) WO2017203884A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677271B (zh) * 2018-08-31 2019-11-11 欣興電子股份有限公司 線路基板及其製作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021033467A1 (ja) * 2019-08-16 2021-02-25 富士フイルム株式会社 構造体の製造方法
CN115210411A (zh) * 2020-03-06 2022-10-18 富士胶片株式会社 填充微细结构体及输送方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002094222A (ja) * 2000-09-19 2002-03-29 Matsushita Electric Ind Co Ltd 電子部品接合用シート、電子部品実装方法、及び電子部品実装装置
JP5043621B2 (ja) * 2007-03-27 2012-10-10 富士フイルム株式会社 異方導電性部材およびその製造方法
JP2008124029A (ja) * 2007-11-26 2008-05-29 Hitachi Chem Co Ltd 接続部材
JP5145110B2 (ja) * 2007-12-10 2013-02-13 富士フイルム株式会社 異方導電性接合パッケージの製造方法
JP2011090865A (ja) * 2009-10-22 2011-05-06 Shinko Electric Ind Co Ltd 導電フィルムおよびその製造方法、並びに半導体装置およびその製造方法
JP5620865B2 (ja) * 2011-03-28 2014-11-05 信越ポリマー株式会社 異方導電性シート
CN103988289A (zh) * 2011-12-16 2014-08-13 旭化成电子材料株式会社 带各向异性导电薄膜的半导体芯片、带各向异性导电薄膜的半导体晶片、以及半导体装置
KR20160147990A (ko) 2014-07-11 2016-12-23 후지필름 가부시키가이샤 이방 도전성 부재 및 다층 배선 기판

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI677271B (zh) * 2018-08-31 2019-11-11 欣興電子股份有限公司 線路基板及其製作方法

Also Published As

Publication number Publication date
CN109155259A (zh) 2019-01-04
KR102134135B1 (ko) 2020-07-15
CN109155259B (zh) 2023-02-28
JPWO2017203884A1 (ja) 2019-02-21
WO2017203884A1 (ja) 2017-11-30
JP6663487B2 (ja) 2020-03-11
KR20180134970A (ko) 2018-12-19

Similar Documents

Publication Publication Date Title
TWI745567B (zh) 積層裝置、積層體及積層裝置的製造方法
CN113423872B (zh) 阳极氧化处理方法及各向异性导电性部件的制造方法
TWI758274B (zh) 異向導電性接合構件、半導體元件、半導體封裝及半導體元件的製造方法
JP2019153415A (ja) 異方導電性部材、異方導電性部材の製造方法、および接合体の製造方法
TW201817087A (zh) 各向異性導電材、電子元件、含半導體元件的結構體及電子元件的製造方法
JP7220796B2 (ja) 構造体の製造方法
TWI729267B (zh) 半導體器件、積層體及半導體器件的製造方法以及積層體的製造方法
TW201901784A (zh) 被處理構件的製造方法及積層體
CN116830391A (zh) 结构体、各向异性导电性部件的制造方法及保护层形成用组合物
JP7493039B2 (ja) 構造体、構造体の製造方法、接合体の製造方法及びデバイスの製造方法
CN115003864B (zh) 金属填充微细结构体的制造方法
TWI765092B (zh) 金屬填充微細結構體的製造方法及絕緣性基材
JP7305770B2 (ja) 構造体の製造方法および接合体の製造方法
TWI774841B (zh) 半導體元件的製造方法及接合構件
WO2019163575A1 (ja) 接合体の製造方法、仮固定部材、および積層体
TW202305839A (zh) 結構體之製造方法