TW201813017A - 晶片封裝結構 - Google Patents
晶片封裝結構 Download PDFInfo
- Publication number
- TW201813017A TW201813017A TW106116075A TW106116075A TW201813017A TW 201813017 A TW201813017 A TW 201813017A TW 106116075 A TW106116075 A TW 106116075A TW 106116075 A TW106116075 A TW 106116075A TW 201813017 A TW201813017 A TW 201813017A
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- Prior art keywords
- layer
- wafer
- chip
- molding layer
- molding
- Prior art date
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- 238000000465 moulding Methods 0.000 claims abstract description 180
- 238000004806 packaging method and process Methods 0.000 claims description 53
- 239000010410 layer Substances 0.000 description 271
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- 239000000463 material Substances 0.000 description 33
- 238000004519 manufacturing process Methods 0.000 description 21
- 238000002161 passivation Methods 0.000 description 19
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- 150000001875 compounds Chemical class 0.000 description 10
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- 229920002120 photoresistant polymer Polymers 0.000 description 4
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- 229910000679 solder Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000013007 heat curing Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
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Classifications
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Abstract
一種晶片封裝結構,晶片封裝結構包括:一第一晶片、一第二晶片及一第三晶片。第二晶片位於第一晶片與第三晶片之間。此晶片封裝結構包括一第一模塑層圍繞第一晶片。此晶片封裝結構包括一第二模塑層圍繞第二晶片。此晶片封裝結構包括一第三模塑層圍繞第三晶片、第一模塑層及第二模塑層。
Description
本發明實施例係關於一種半導體技術,且特別是關於一種晶片封裝結構及其製造方法。
半導體積體電路(IC)工業已經經歷了快速增長。IC材料和設計中的技術進展已經產生了多代IC。每一代IC都比前一代IC具有更小和更複雜的電路。然而,這些進展也已增加處理和製造IC的複雜度。
在IC演進的過程中,功能密度(即,每晶片面積的內連裝置的數量)普遍增大,而幾何尺寸(即,可以使用製造製程產生的最小部件(或線))卻減小。這種按比例縮小製程通常因生產效率提高及相關成本降低而帶來了益處。
然而,由於特徵部件(feature)尺寸不斷減小,製造製程變得更加難以實施。因此,在尺寸越來越小的情形下形成可靠的半導體裝置成為了一種挑戰。
根據一些實施例,提供一種晶片封裝結構,包括:一第一晶片、一第二晶片及一第三晶片。第二晶片位於第一晶片與第三晶片之間。此晶片封裝結構包括一第一模塑層圍繞第一晶片。此晶片封裝結構包括一第二模塑層圍繞第二晶片。此晶片封裝結構包括一第三模塑層圍繞第三晶片、第一模塑層及 第二模塑層。
根據一些實施例,本揭露提供一種晶片封裝結構,包括:一第一晶片、一第二晶片及一第三晶片。第二晶片位於第一晶片與第三晶片之間。此晶片封裝結構包括一第一模塑層圍繞第一晶片及第二晶片。第一模塑層為單層結構。此晶片封裝結構包括一第二模塑層圍繞第三晶片及第一模塑層。第一模塑層的一第一下表面及第二模塑層的一第二下表面為共平面。
根據一些實施例,本揭露提供一種晶片封裝結構結構之製造方法,上述方法包括形成一模塑結構圍繞一第一晶片及位於第一晶片上方的一第二晶片。上述方法包括將模塑結構、第一晶片及第二晶片設置於一承載基底上方。上述方法包括提供一第三晶片於第二晶片上。上述方法包括形成一第一模塑層於承載基底上方且圍繞第三晶片及模塑結構。第一模塑層及承載基底由不同材料所構成。上述方法包括移除承載基底。
100、400‧‧‧封裝體
100e‧‧‧邊緣
110、220‧‧‧承載基底
120、230‧‧‧黏著層
130、170、240‧‧‧晶片結構
130a、132b、138a、162、170a、172a、178a、182、212、242a、248a、249a、254‧‧‧上表面
132、172、242‧‧‧晶片
132a、146、172b、186、256‧‧‧下表面
134、174、244、262‧‧‧介電層
136、176、246‧‧‧接合墊
138、178、248‧‧‧內連結構
139、179、249‧‧‧鈍化護層
140、180、250‧‧‧模塑層
150、190‧‧‧絕緣層
152、192‧‧‧孔洞
160、210‧‧‧導電柱體
132c、172c、144、154、184、194、252‧‧‧側壁
200、200a、300、500‧‧‧晶片封裝結構
260‧‧‧接線結構
264‧‧‧接線層
266‧‧‧導電墊
268‧‧‧導電介層連接窗
270‧‧‧導電凸塊
第1A至1H圖係繪示出根據一些實施例之晶片封裝結構之製造方法於不同階段的剖面示意圖。
第1C-1及1H-1圖係繪示出根據一些實施例之第1C及1H圖中晶片封裝結構的上視圖。
第2A至2H圖係繪示出根據一些實施例之晶片封裝結構之製造方法於不同階段的剖面示意圖。
第2B-1及2H-1圖係繪示出根據一些實施例之第2B及2H圖 中晶片封裝結構的上視圖。
以下的揭露內容提供許多不同的實施例或範例,以實施本發明的不同特徵部件。而以下的揭露內容是敘述各個構件及其排列方式的特定範例,以求簡化本揭露內容。當然,這些僅為範例說明並非用以限定本發明。舉例來說,若是以下的揭露內容敘述了將一第一特徵部件形成於一第二特徵部件之上或上方,即表示其包含了所形成的上述第一特徵部件與上述第二特徵部件是直接接觸的實施例,亦包含了尚可將附加的特徵部件形成於上述第一特徵部件與上述第二特徵部件之間,而使上述第一特徵部件與上述第二特徵部件可能未直接接觸的實施例。另外,本揭露內容在各個不同範例中會重複標號及/或文字。重複是為了達到簡化及明確目的,而非自行指定所探討的各個不同實施例及/或配置之間的關係。
再者,在空間上的相關用語,例如”下方”、”之下”、”下”、”上方”、”上”等等在此處係用以容易表達出本說明書中所繪示的圖式中元件或特徵部件與另外的元件或特徵部件的關係。這些空間上的相關用語除了涵蓋圖式所繪示的方位外,還涵蓋裝置於使用或操作中的不同方位。此裝置可具有不同方位(旋轉90度或其他方位)且此處所使用的空間上的相關符號同樣有相應的解釋。可理解的是可以在方法進行之前、期間和之後進行額外的操作,並且對於上述方法的其他實施例,可以替換或排除上述一些的操作。
第1A至1H圖係繪示出根據一些實施例之晶片封裝 結構之製造方法於不同階段的剖面示意圖。第1C-1及1H-1圖係繪示出根據一些實施例之第1C及1H圖中晶片封裝結構的上視圖。第1C圖係繪示出根據一些實施例之沿著第1C-1圖I-I’剖線的封裝體100剖面示意圖。第1H圖係繪示出根據一些實施例之沿著第1H-1圖I-I’剖線的晶片封裝結構300剖面示意圖。
如第1A圖所示,根據一些實施例,提供一承載基底110。根據一些實施例,承載基底110係用以在後續的製程步驟過程中提供臨時性的物理及結構支撐。根據一些實施例,承載基底110包括玻璃、氧化矽、氧化鋁、或其組合等等。根據一些實施例,承載基底110包括一晶圓。
如第1A圖所示,根據一些實施例,一黏著層120形成於承載基底110上方。根據一些實施例,黏著層120包括任何適合的黏著材料,例如高分子材料。舉例來說,根據一些實施例,黏著層120包括紫外(UV)光膠,其暴露於UV光膠時會失去黏性。在一些實施例中,黏著層120包括雙面黏性膠帶。黏著層120利用層壓(lamination)製程、旋塗製程或另一適合製程而形成。
如第1A圖所示,根據一些實施例,提供多個晶片結構130於黏著層120上方。根據一些實施例,每一晶片結構130包括一晶片132、一介電層134、多個接合墊136、多個內連結構138以及一鈍化護層139。根據一些實施例,介電層134形成於晶片132上方。
根據一些實施例,介電層134包括硼矽酸鹽玻璃(BSG)、磷矽酸鹽玻璃(PSG)、硼磷矽酸鹽玻璃(BPSG)、 氟化矽酸鹽玻璃(FSG)、低介電常數(low-k)材料、多孔介電材料或其組合。根據一些實施例,介電層134可利用化學氣相沉積(chemical vapor deposition,CVD)製程、高密度電漿化學氣相沉積(high density plasma CVD,HDPCVD)製程、旋塗製程、濺鍍製程或其組合而形成。
根據一些實施例,接合墊136形成於介電層134內。根據一些實施例,接合墊136電性連接至形成於晶片132內部/上方的裝置(未繪示)。根據一些實施例,內連結構138形成於對應的接合墊136上方。
根據一些實施例,內連結構138包括導電柱體或導電凸塊。根據一些實施例,鈍化護層139形成於介電層134上方且圍繞內連結構138。鈍化護層139包括高分子材料或另一適合的絕緣材料。
如第1B圖所示,根據一些實施例,一模塑層140形成於承載基底110及黏著層120上方。根據一些實施例,模塑層140圍繞晶片結構130。在一些實施例中,模塑層140包括高分子材料或另一適合的絕緣材料。根據一些實施例,承載基底110及模塑層140由不同材料構成。
根據一些實施例,模塑層140的製作包括:形成一模塑化合物(molding compound)材料層於黏著層120上方;進行一固化製程以交叉鏈接(或熱固化)模塑化合物層的高分子;對模塑化合物層進行一研磨製程直至露出內連結構138。因此,根據一些實施例,內連結構138的上表面138a、晶片結構130的上表面130a及模塑層140的上表面142為共平面。
如第1B圖所示,根據一些實施例,一絕緣層150形成於模塑層140及晶片結構130上方。根據一些實施例,絕緣層150為連續層。根據一些實施例,絕緣層150具有多個孔洞152位於內連結構138上方。根據一些實施例,孔洞152對應露出其下方的內連結構138。
根據一些實施例,由於封裝體100的不同元件的熱膨脹係數(coefficients of thermal expansion,CTE)不同,封裝體100的邊緣100e易於發生歪曲(或彎曲)。因此,根據一些實施例,為了消除或降低封裝體100的翹曲,承載基底110的材料的熱膨脹係數小於模塑層140的材料的熱膨脹係數。
如第1C及1C-1圖所示,根據一些實施例,多個導電柱體160形成於孔洞152內部及上方,以各自電性連接至內連結構138。根據一些實施例,導電柱體160包括銅或另一適合的導電材料。
如第1C及1C-1圖所示,根據一些實施例,提供晶片結構170於絕緣層150上方。根據一些實施例,晶片結構170位於晶片結構130及模塑層140上方。
在一些實施例中,一部分的晶片結構130露出於晶片結構170。根據一些實施例,晶片結構170位於導電柱體160之間。根據一些實施例,導電柱體160圍繞晶片結構170。
根據一些實施例,每一晶片結構170包括一晶片172、一介電層174、多個接合墊176、多個內連結構178及一鈍化護層179。根據一些實施例,介電層174形成於晶片172上方。
根據一些實施例,介電層134包括硼矽酸鹽玻璃 (BSG)、磷矽酸鹽玻璃(PSG)、硼磷矽酸鹽玻璃(BPSG)、氟化矽酸鹽玻璃(FSG)、低介電常數(low-k)材料、多孔介電材料或其組合。根據一些實施例,介電層174可利用化學氣相沉積(CVD)製程、高密度電漿化學氣相沉積(HDPCVD)製程、旋塗製程、濺鍍製程或其組合而形成。
根據一些實施例,接合墊176形成於介電層174內。根據一些實施例,接合墊176電性連接至形成於晶片172內部/上方的裝置(未繪示)。根據一些實施例,內連結構178形成於對應的接合墊176上方。
根據一些實施例,內連結構178包括導電柱體或導電凸塊。根據一些實施例,鈍化護層179形成於介電層174上方且圍繞內連結構178。鈍化護層179包括高分子材料或另一適合的絕緣材料。
如第1C及1C-1圖所示,根據一些實施例,一模塑層180形成於絕緣層150上方。根據一些實施例,絕緣層150使模塑層140及晶片結構130與模塑層180及晶片結構170隔開。根據一些實施例,模塑層180位於晶片結構130及模塑層140上方。
根據一些實施例,模塑層180圍繞晶片結構170及導電柱體160。在一些實施例中,模塑層180包括高分子材料或另一適合的絕緣材料。
根據一些實施例,模塑層180的製作包括:形成一模塑化合物材料層於絕緣層150上方;進行一固化製程以交叉鏈接(或熱固化)模塑化合物層的高分子;對模塑化合物層進行一研磨製程直至露出導電柱體160及內連結構178。
因此,根據一些實施例,內連結構178的上表面178a、晶片結構170的上表面170a、導電柱體160的上表面162及模塑層180的上表面182為共平面。根據一些實施例,導電柱體160穿過模塑層180。
如第1D圖所示,根據一些實施例,一絕緣層190形成於模塑層180及晶片結構170上方。根據一些實施例,絕緣層190具有多個孔洞192位於導電柱體160上方。根據一些實施例,孔洞192對應露出其下方的導電柱體160及其下方的內連結構178。
如第1D圖所示,根據一些實施例,多個導電柱體210形成於孔洞192內部及上方,以各自電性連接至導電柱體160及內連結構178。根據一些實施例,導電柱體210包括銅或另一適合的導電材料。
如第1E圖所示,根據一些實施例,晶片結構130及模塑層140自承載基底110剝離。根據一些實施例,剝離製程包括對黏著層120進行一熱製程。舉例來說,對黏著層120照射UV光,以弱化黏著層120的黏性。
如第1E圖所示,根據一些實施例,對絕緣層190、模塑層180、絕緣層150及模塑層140進行一切割製程,以形成多個單獨的晶片封裝結構200。根據一些實施例,每一晶片封裝結構200包括多個晶片結構130、模塑層140、絕緣層150、多個導電柱體160、多個晶片結構170、模塑層180、絕緣層190及多個導電柱體210。
根據一些實施例,在每一晶片封裝結構200中,絕 緣層190的側壁194、模塑層180的側壁184、絕緣層150的側壁154及模塑層140的側壁144為共平面。根據一些實施例,模塑層180及模塑層140一同形成一模塑結構。
如第1F圖所示,根據一些實施例,提供一承載基底220,根據一些實施例,承載基底220係用以在後續的製程步驟過程中提供臨時性的物理及結構支撐。根據一些實施例,承載基底220包括玻璃、氧化矽、氧化鋁、或其組合等等。根據一些實施例,承載基底220包括一晶圓。
如第1F圖所示,根據一些實施例,一黏著層230形成於承載基底220上方。根據一些實施例,黏著層230包括任何適合的黏著材料,例如高分子材料。
舉例來說,根據一些實施例,黏著層230包括紫外(UV)光膠,其暴露於UV光膠時會失去黏性。在一些實施例中,黏著層230包括雙面黏性膠帶。黏著層120利用層壓製程、旋塗製程或另一適合製程而形成。
如第1F圖所示,根據一些實施例,晶片封裝結構200設置於黏著層230上方。如第1F圖所示,根據一些實施例,分別於晶片封裝結構200上方提供多個晶片結構240。
根據一些實施例,晶片結構240位於晶片封裝結構200的其中一者的晶片結構170及模塑層180上方。絕緣層190使其下方的晶片結構170與其上方的晶片結構240隔開。
根據一些實施例,每一晶片結構240包括一晶片242、一介電層244、多個接合墊246、多個內連結構248以及一鈍化護層249。根據一些實施例,介電層244形成於晶片242上 方。
根據一些實施例,介電層244包括硼矽酸鹽玻璃(BSG)、磷矽酸鹽玻璃(PSG)、硼磷矽酸鹽玻璃(BPSG)、氟化矽酸鹽玻璃(FSG)、低介電常數(low-k)材料、多孔介電材料或其組合。
根據一些實施例,介電層244可利用化學氣相沉積(CVD)製程、高密度電漿化學氣相沉積(HDPCVD)製程、旋塗製程、濺鍍製程或其組合而形成。根據一些實施例,接合墊246形成於介電層244內。根據一些實施例,接合墊246電性連接至形成於晶片242內部/上方的裝置(未繪示)。
根據一些實施例,內連結構248形成於對應的接合墊246上方。根據一些實施例,內連結構248包括導電柱體或導電凸塊。根據一些實施例,鈍化護層249形成於介電層244上方且圍繞內連結構248。鈍化護層249包括高分子材料或另一適合的絕緣材料。
如第1G圖所示,根據一些實施例,一模塑層250形成於黏著層230及晶片封裝結構200上方。根據一些實施例,模塑層250圍繞晶片封裝結構200及晶片結構240。在一些實施例中,模塑層250包括高分子材料或另一適合的絕緣材料。
根據一些實施例,承載基底220及模塑層250由不同材料構成。為了消除或降低第1G圖的封裝體的翹曲,承載基底220的材料的熱膨脹係數小於模塑層250的材料的熱膨脹係數。
根據一些實施例,模塑層250的製作包括:形成一 模塑化合物材料層於黏著層230及晶片封裝結構200上方;進行一固化製程以交叉鏈接(或熱固化)模塑化合物層的高分子;對模塑化合物層進行一研磨製程直至露出內連結構248。
如第1G圖所示,根據一些實施例,一接線結構260形成於模塑層250、晶片結構240及晶片封裝結構200上方。根據一些實施例,接線結構260包括一介電層262、多個接線層264、多個導電墊266及多個導電介層連接窗(via)268。根據一些實施例,接線層264及導電介層連接窗268位於介電層262內。根據一些實施例,導電墊266位於介電層262上方。
根據一些實施例,導電介層連接窗268位於導電墊266、接線層264、導電柱體210及內連結構248之間。因此,根據一些實施例,導電墊266、接線層264、導電柱體210及內連結構248能夠根據設計需求並經由導電介層連接窗268而彼此電性連接。
如第1G圖所示,根據一些實施例,多個導電凸塊270分別形成於導電墊266上方。根據一些實施例,導電凸塊270包括錫(Sn)或另一適合的導電材料。根據一些實施例,導電凸塊270的製作包括形成一焊料於導電墊266上方以及對焊料進行回流。
如第1H及1H-1圖所示,根據一些實施例,晶片封裝結構200及模塑層250自承載基底220剝離。根據一些實施例,剝離製程包括對黏著層230進行一熱製程。舉例來說,對黏著層230照射UV光,以弱化黏著層230的黏性。
如第1H及1H-1圖所示,根據一些實施例,對接線 結構260及模塑層250進行一切割製程,以形成多個單獨的晶片封裝結構300。為了簡化目的,根據一些實施例,第1H-1圖中省略了導電凸塊270及接線結構260。
根據一些實施例,每一晶片封裝結構300包括晶片封裝結構200、晶片結構240、模塑層250、接線結構260及導電凸塊270。根據一些實施例,晶片封裝結構300中接線結構260的側壁262及模塑層250的側壁252為共平面。
根據一些實施例,晶片封裝結構300中導電柱體210的上表面212、模塑層250的上表面254、鈍化護層249的上表面249a及內連結構248的上表面248a為共平面。根據一些實施例,導電柱體210穿過模塑層250。根據一些實施例,模塑層250連續性圍繞整個晶片封裝結構200及整個晶片結構240。根據一些實施例,模塑層250為單層結構。
在一些實施例中,晶片132的下表面132a、模塑層140的下表面146及模塑250的下表面256為共平面。根據一些實施例,模塑層140並未覆蓋晶片132的上表面132b。根據一些實施例,模塑層140並未覆蓋晶片132的下表面132a。
根據一些實施例,模塑層180並未覆蓋晶片172的上表面172a。根據一些實施例,模塑層250並未覆蓋晶片242的上表面242a。根據一些實施例,晶片封裝結構300為扇出式晶片封裝結構。
根據一些實施例,第1A至1H圖的製程步驟包括:進行一切割製程,以形成單獨的多個晶片封裝結構200;將晶片封裝結構200設置於承載基底220上方;形成模塑層250於黏 著層230及晶片封裝結構200上方;去除承載基底220以及進行一切割製程,以形成單獨的多個晶片封裝結構300。
因此,根據一些實施例,在進行第1A至1H圖的製程步驟過程中,藉由選擇模塑層140及承載基底110的材料與模塑層250及承載基底220的材料而消除或降低了晶片封裝結構300的翹曲兩次。如此一來,根據一些實施例,晶片封裝結構300的翹曲降至可接受的程度。因此,根據一些實施例,改善了晶片封裝結構300的良率。
由於進行第1E圖的切割製程以及第1F圖中在承載基底220上方設置晶片封裝結構200,因此晶片封裝結構200小於晶片封裝結構300。因此,若承載基底110及承載基底220具有相同尺寸(例如,晶圓大小),位於承載基底110上方的晶片封裝結構200的數量會大於位於承載基底220上方的晶片封裝結構300的數量。因此,根據一些實施例,製作晶片封裝結構200的製程成本會降低。
在一些實施例中,對第1D圖的導電柱體210進行一電性測試(例如,最終測試),以辨別良品晶片(known good dies,KGDs)。之後,根據一些實施例,在第1F圖的步驟中,拾取具有良品晶片的晶片封裝結構200並設置於承載基底220上方,以形成晶片封裝結構300。
因此,根據一些實施例,第1A至1H圖的製程步驟防止晶片封裝結構300中形成具有不良晶片的晶片封裝結構200。因此,改善晶片封裝結構300的良率。
第2A至2H圖係繪示出根據一些實施例之晶片封裝 結構之製造方法於不同階段的剖面示意圖。第2B-1及2H-1圖係繪示出根據一些實施例之第2B及2H圖中晶片封裝結構的上視圖。第2B圖係繪示出根據一些實施例之沿著第2B-1圖I-I’剖線的封裝體400剖面示意圖。
第2H圖係繪示出根據一些實施例之沿著第2H-1圖I-I’剖線的封裝結構500剖面示意圖。需注意的是第2A至2H圖中與第1A至1H圖中標示相同標號的部件具有相似的材料。因此,此處不再重複詳細之說明。
如第2A圖所示,根據一些實施例,提供一承載基底110。根據一些實施例,承載基底110係用以在後續的製程步驟過程中提供臨時性的物理及結構支撐。如第2A圖所示,根據一些實施例,一黏著層120形成於承載基底110上方。根據一些實施例,黏著層120利用層壓製程、旋塗製程或另一適合製程而形成。
如第2A圖所示,根據一些實施例,提供多個晶片結構130於黏著層120上方。根據一些實施例,每一晶片結構130包括一晶片132、一介電層134、多個接合墊136、多個內連結構138以及一鈍化護層139。根據一些實施例,介電層134形成於晶片132上方。
根據一些實施例,接合墊136形成於介電層134內。根據一些實施例,接合墊136電性連接至形成於晶片132內部/上方的裝置(未繪示)。根據一些實施例,內連結構138形成於對應的接合墊136上方。
根據一些實施例,內連結構138包括導電柱體或導 電凸塊。根據一些實施例,鈍化護層139形成於介電層134上方且圍繞內連結構138。
如第2A圖所示,根據一些實施例,多個絕緣層150各自形成於晶片結構130上方。根據一些實施例,每一絕緣層150具有多個孔洞152位於晶片結構130的內連結構138上方。根據一些實施例,孔洞152對應露出其下方的內連結構138。
如第2A圖所示,根據一些實施例,多個導電柱體160形成於孔洞152內部及上方,以各自電性連接至內連結構138。根據一些實施例,導電柱體160包括銅或另一適合的導電材料。
如第2B及2B-1圖所示,根據一些實施例,提供晶片結構170於絕緣層150上方。根據一些實施例,晶片結構170位於晶片結構130上方。根據一些實施例,絕緣層150將晶片結構130與晶片結構170隔開。
在一些實施例中,一部分的晶片結構130露出於晶片結構170。根據一些實施例,晶片結構170位於導電柱體160之間。根據一些實施例,導電柱體160圍繞晶片結構170。
根據一些實施例,每一晶片結構170包括一晶片172、一介電層174、多個接合墊176、多個內連結構178及一鈍化護層179。根據一些實施例,介電層174形成於晶片172上方。
根據一些實施例,接合墊176形成於介電層174內。根據一些實施例,接合墊176電性連接至形成於晶片172內部/上方的裝置(未繪示)。根據一些實施例,內連結構178形成於對應的接合墊176上方。
根據一些實施例,內連結構178包括導電柱體或導電凸塊。根據一些實施例,鈍化護層179形成於介電層174上方且圍繞內連結構178。鈍化護層179包括高分子材料或另一適合的絕緣材料。
如第2C圖所示,根據一些實施例,一模塑層180形成於黏著層120上方。根據一些實施例,模塑層180圍繞晶片結構130、晶片結構170及導電柱體160。根據一些實施例,模塑層180覆蓋晶片結構130。在一些實施例中,部分的模塑層180位於晶片結構130、晶片結構170及導電柱體160之間。根據一些實施例,模塑層180包括高分子材料或另一適合的絕緣材料。
根據一些實施例,模塑層180及承載基底110由不同材料構成。為了消除或降低封裝體400的翹曲,承載基底110的材料的熱膨脹係數小於模塑層180的材料的熱膨脹係數。
根據一些實施例,模塑層180的製作包括:形成一模塑化合物材料層於黏著層120上方;進行一固化製程以交叉鏈接(或熱固化)模塑化合物層的高分子;對模塑化合物層進行一研磨製程直至露出導電柱體160及內連結構178。
因此,根據一些實施例,內連結構178的上表面178a、晶片結構170的上表面170a、導電柱體160的上表面162及模塑層180的上表面182為共平面。根據一些實施例,導電柱體160穿過模塑層180。
如第2D圖所示,根據一些實施例,一絕緣層190形成於模塑層180及晶片結構170上方。根據一些實施例,絕緣層190具有多個孔洞192位於導電柱體160上方。
根據一些實施例,孔洞192對應露出其下方的導電柱體160及其下方的內連結構178。如第2D圖所示,根據一些實施例,多個導電柱體210形成於孔洞192內部及上方,以各自電性連接至導電柱體160及內連結構178。
如第2E圖所示,根據一些實施例,晶片結構130及模塑層180自承載基底110剝離。根據一些實施例,剝離製程包括對黏著層120進行一熱製程。舉例來說,對黏著層120照射UV光,以弱化黏著層120的黏性。
如第2E圖所示,根據一些實施例,對絕緣層190及模塑層180進行一切割製程,以形成多個單獨的晶片封裝結構200a。根據一些實施例,每一晶片封裝結構200a包括多個晶片結構130、多個導電柱體160、多個晶片結構170、模塑層180、絕緣層190及多個導電柱體210。根據一些實施例,在每一晶片封裝結構200a中,絕緣層190的側壁194及模塑層180的側壁184為共平面。根據一些實施例,模塑層180及模塑層140一同形成一模塑結構。
如第2F圖所示,根據一些實施例,提供一承載基底220,根據一些實施例,承載基底220係用以在後續的製程步驟過程中提供臨時性的物理及結構支撐。如第2F圖所示,根據一些實施例,一黏著層230形成於承載基底220上方。
如第2F圖所示,根據一些實施例,晶片封裝結構200a設置於黏著層230上方。如第2F圖所示,根據一些實施例,分別於晶片封裝結構200上方提供多個晶片結構240。
根據一些實施例,晶片結構240位於晶片封裝結構 200a的其中一者的晶片結構170及模塑層180上方。絕緣層190使其下方的晶片結構170與其上方的晶片結構240隔開。
根據一些實施例,每一晶片結構240包括一晶片242、一介電層244、多個接合墊246、多個內連結構248以及一鈍化護層249。根據一些實施例,介電層244形成於晶片242上方。根據一些實施例,接合墊246形成於介電層244內。根據一些實施例,接合墊246電性連接至形成於晶片242內部/上方的裝置(未繪示)。
根據一些實施例,內連結構248形成於對應的接合墊246上方。根據一些實施例,內連結構248包括導電柱體或導電凸塊。根據一些實施例,鈍化護層249形成於介電層244上方且圍繞內連結構248。
如第2G圖所示,根據一些實施例,一模塑層250形成於黏著層230及晶片封裝結構200a上方。根據一些實施例,模塑層250圍繞晶片封裝結構200a及晶片結構240。
模塑層250包括高分子材料或另一適合的絕緣材料。在一些實施例中,模塑層180及模塑層250由不同材料構成。在其他實施例中,模塑層180及模塑層250由相同材料構成。
根據一些實施例,模塑層250及承載基底220由不同材料構成。為了消除或降低第2G圖的封裝體的翹曲,承載基底220的材料的熱膨脹係數小於模塑層250的材料的熱膨脹係數。
如第2G圖所示,根據一些實施例,一接線結構260形成於模塑層250、晶片結構240及晶片封裝結構200a上方。根 據一些實施例,接線結構260包括一介電層262、多個接線層264、多個導電墊266及多個導電介層連接窗268。根據一些實施例,接線層264及導電介層連接窗268位於介電層262內。根據一些實施例,導電墊266位於介電層262上方。
根據一些實施例,導電介層連接窗268位於導電墊266、接線層264、導電柱體210及內連結構248之間。因此,根據一些實施例,導電墊266、接線層264、導電柱體210及內連結構248能夠根據設計需求並經由導電介層連接窗268而彼此電性連接。
如第2G圖所示,根據一些實施例,多個導電凸塊270分別形成於導電墊266上方。根據一些實施例,導電凸塊270包括錫(Sn)或另一適合的導電材料。根據一些實施例,導電凸塊270的製作包括形成一焊料於導電墊266上方以及對焊料進行回流。
如第2H及2H-1圖所示,根據一些實施例,晶片封裝結構200a及模塑層250自承載基底220剝離。根據一些實施例,剝離製程包括對黏著層230進行一熱製程。舉例來說,對黏著層230照射UV光,以弱化黏著層230的黏性。
如第2H及2H-1圖所示,根據一些實施例,對接線結構260及模塑層250進行一切割製程,以形成多個單獨的晶片封裝結構500。為了簡化目的,根據一些實施例,第2H-1圖中省略了導電凸塊270及接線結構260。
根據一些實施例,每一晶片封裝結構500包括晶片封裝結構200a、晶片結構240、模塑層250、接線結構260及導 電凸塊270。根據一些實施例,晶片封裝結構500中接線結構260的側壁262及模塑層250的側壁252為共平面。
根據一些實施例,晶片封裝結構500中導電柱體210的上表面212、模塑層250的上表面254、鈍化護層249的上表面249a及內連結構248的上表面248a為共平面。根據一些實施例,導電柱體210穿過模塑層250。根據一些實施例,模塑層250連續性圍繞整個晶片封裝結構200a及整個晶片結構240。根據一些實施例,模塑層180為單層結構。
在一些實施例中,晶片132的下表面132a、模塑層180的下表面186及模塑250的下表面256為共平面。根據一些實施例,模塑層250圍繞絕緣層190及絕緣層150。根據一些實施例,模塑層180覆蓋晶片132的側壁132c及上表面132b與晶片172的側壁172c及下表面172b。
根據一些實施例,模塑層180覆蓋晶片132的上表面132b,但未覆蓋晶片172的上表面172a。根據一些實施例,模塑層250並未覆蓋晶片242的上表面242a。根據一些實施例,模塑層180並未覆蓋晶片132的下表面132a。根據一些實施例,模塑層250並未覆蓋晶片132的下表面132a以及模塑層180的下表面186。根據一些實施例,晶片封裝結構500為扇出式晶片封裝結構。
根據一些實施例,提供晶片封裝結構及其製造方法。上述方法(晶片封裝結構之製造方法)包括進行一第一切割製程,以形成單獨的多個第一晶片封裝結構,並將第一晶片封裝結構設置於一承載基底上方。形成一模塑層於承載基底及 第一晶片封裝結構上方,並進行一第二切割製程,以形成單獨的多個第二晶片封裝結構。藉由選擇模塑層及承載基底的材料,以消除或降低第二晶片封裝結構的翹曲,因而改善第二晶片封裝結構的良率。
根據一些實施例,提供一種晶片封裝結構。晶片封裝結構包括:一第一晶片、一第二晶片及一第三晶片。第二晶片位於第一晶片與第三晶片之間。此晶片封裝結構包括一第一模塑層圍繞第一晶片。此晶片封裝結構包括一第二模塑層圍繞第二晶片。此晶片封裝結構包括一第三模塑層圍繞第三晶片、第一模塑層及第二模塑層。
根據一些實施例,第一晶片的下表面、第一模塑層的下表面以及第三模塑層的下表面為共平面。
根據一些實施例,第一模塑層的側壁以及第二模塑層的側壁為共平面。
根據一些實施例,此晶片封裝結構更包括一第一絕緣層位於第一模塑層及第一晶片上方,以將第一模塑層及第一晶片與第二模塑層及第二晶片隔開。再者,根據一些實施例,此晶片封裝結構更包括一第二絕緣層位於第二模塑層及第二晶片上方,以將第二晶片與第三晶片隔開。再者,根據一些實施例,第三模塑層圍繞第一絕緣層及第二絕緣層。
根據一些實施例,此晶片封裝結構更包括一接線層位於第三模塑層的一第一上表面及第三晶片的一第二上表面上方。
根據一些實施例,第一模塑層未覆蓋第一晶片的 一第一上表面,且第二模塑層未覆蓋第二晶片的一第二上表面。
根據一些實施例,提供一種晶片封裝結構。晶片封裝結構包括:一第一晶片、一第二晶片及一第三晶片。第二晶片位於第一晶片與第三晶片之間。此晶片封裝結構包括一第一模塑層圍繞第一晶片及第二晶片。第一模塑層為單層結構。此晶片封裝結構包括一第二模塑層圍繞第三晶片及第一模塑層。第一模塑層的一第一下表面及第二模塑層的一第二下表面為共平面。
根據一些實施例,第一晶片的一第三下表面、第一模塑層的第一下表面以及第二模塑層的第二下表面為共平面。
根據一些實施例,此晶片封裝結構更包括一導電柱體位於第一晶片上方,且穿過第一模塑層。再者,根據一些實施例,第一模塑層的第一上表面及導電柱體的第二上表面為共平面。
根據一些實施例,第一模塑層及第二模塑層由不同材料所構成。
根據一些實施例,第一模塑層覆蓋第一晶片的一第一側壁及一第一上表面以及第二晶片的一第二側壁及一下表面。再者,根據一些實施例,第一模塑層未覆蓋第二晶片的一第二上表面。
根據一些實施例,提供一種晶片封裝結構之製造方法。上述方法包括形成一模塑結構圍繞一第一晶片及位於第 一晶片上方的一第二晶片。上述方法包括將模塑結構、第一晶片及第二晶片設置於一承載基底上方。上述方法包括提供一第三晶片於第二晶片上。上述方法包括形成一第一模塑層於承載基底上方且圍繞第三晶片及模塑結構。第一模塑層及承載基底由不同材料所構成。上述方法包括移除承載基底。
根據一些實施例,形成模塑結構、第一晶片及第二晶片包括形成一第二模塑層圍繞第一晶片、提供第二晶片於第一晶片上方以及形成一第三模塑層圍繞第二晶片,其中模塑結構由第二模塑層及第三模塑層所構成。再者,根據一些實施例,上述方法更包括在形成第三模塑層之前,形成一導電柱體於第一晶片上方,其中第三模塑層圍繞導電柱體。
根據一些實施例,模塑結構為單層結構。
根據一些實施例,承載基底的材料的熱膨脹係數小於第一模塑層的材料的熱膨脹係數。
以上概略說明了本發明數個實施例的特徵,使所屬技術領域中具有通常知識者對於本揭露的型態可更為容易理解。任何所屬技術領域中具有通常知識者應瞭解到可輕易利用本揭露作為其它製程或結構的變更或設計基礎,以進行相同於此處所述實施例的目的及/或獲得相同的優點。任何所屬技術領域中具有通常知識者也可理解與上述等同的結構並未脫離本揭露之精神和保護範圍內,且可在不脫離本揭露之精神和範圍內,當可作更動、替代與潤飾。
Claims (1)
- 一種晶片封裝結構,包括:一第一晶片、一第二晶片及一第三晶片,其中該第二晶片位於該第一晶片與該第三晶片之間;一第一模塑層圍繞該第一晶片;一第二模塑層圍繞該第二晶片;以及一第三模塑層圍繞該第三晶片、該第一模塑層及該第二模塑層。
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2016
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CN107622982B (zh) | 2021-10-22 |
CN107622982A (zh) | 2018-01-23 |
US20180122780A1 (en) | 2018-05-03 |
US20200365563A1 (en) | 2020-11-19 |
TWI701773B (zh) | 2020-08-11 |
US10734357B2 (en) | 2020-08-04 |
US11756931B2 (en) | 2023-09-12 |
US9825007B1 (en) | 2017-11-21 |
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