TW201802077A - 芳香族胺衍生物及使用其之有機電致發光元件 - Google Patents
芳香族胺衍生物及使用其之有機電致發光元件 Download PDFInfo
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- TW201802077A TW201802077A TW106136814A TW106136814A TW201802077A TW 201802077 A TW201802077 A TW 201802077A TW 106136814 A TW106136814 A TW 106136814A TW 106136814 A TW106136814 A TW 106136814A TW 201802077 A TW201802077 A TW 201802077A
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- aromatic amine
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- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- CUIWZLHUNCCYBL-UHFFFAOYSA-N decacyclene Chemical compound C12=C([C]34)C=CC=C4C=CC=C3C2=C2C(=C34)C=C[CH]C4=CC=CC3=C2C2=C1C1=CC=CC3=CC=CC2=C31 CUIWZLHUNCCYBL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 125000005266 diarylamine group Chemical group 0.000 description 1
- GOXNHPQCCUVWRO-UHFFFAOYSA-N dibenzothiophen-4-ylboronic acid Chemical compound C12=CC=CC=C2SC2=C1C=CC=C2B(O)O GOXNHPQCCUVWRO-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 125000003453 indazolyl group Chemical group N1N=C(C2=C1C=CC=C2)* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000005956 isoquinolyl group Chemical group 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- SKEDXQSRJSUMRP-UHFFFAOYSA-N lithium;quinolin-8-ol Chemical compound [Li].C1=CN=C2C(O)=CC=CC2=C1 SKEDXQSRJSUMRP-UHFFFAOYSA-N 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- YQVDNJJYNQAOER-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]-4-methylaniline Chemical compound C1=CC(C)=CC=C1NC1=CC=C(C=2C=CC(N)=CC=2)C=C1 YQVDNJJYNQAOER-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 125000001715 oxadiazolyl group Chemical group 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- YRZZLAGRKZIJJI-UHFFFAOYSA-N oxyvanadium phthalocyanine Chemical compound [V+2]=O.C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 YRZZLAGRKZIJJI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 125000004309 pyranyl group Chemical class O1C(C=CC=C1)* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- FYNROBRQIVCIQF-UHFFFAOYSA-N pyrrolo[3,2-b]pyrrole-5,6-dione Chemical class C1=CN=C2C(=O)C(=O)N=C21 FYNROBRQIVCIQF-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 125000002730 succinyl group Chemical group C(CCC(=O)*)(=O)* 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical class C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical class [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- WRECIMRULFAWHA-UHFFFAOYSA-N trimethyl borate Chemical compound COB(OC)OC WRECIMRULFAWHA-UHFFFAOYSA-N 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
- C07D307/77—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom ortho- or peri-condensed with carbocyclic rings or ring systems
- C07D307/91—Dibenzofurans; Hydrogenated dibenzofurans
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- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/50—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom condensed with carbocyclic rings or ring systems
- C07D333/76—Dibenzothiophenes
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- C07D405/00—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom
- C07D405/02—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings
- C07D405/12—Heterocyclic compounds containing both one or more hetero rings having oxygen atoms as the only ring hetero atoms, and one or more rings having nitrogen as the only ring hetero atom containing two hetero rings linked by a chain containing hetero atoms as chain links
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- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
- C07D409/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
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Abstract
本發明之下述式(1)所表示之芳香族胺衍生物可用作有機EL元件之構成成分,實現即便進行低電壓驅動亦為高效率且長壽命之有機EL元件。 [化1](1) (式中,HAr1
、Ar2
、L1
、L2
、及L3
係如說明書中所定義。)
Description
本發明係關於一種芳香族胺衍生物及使用其之有機電致發光元件。例如係關於一種具有聯三伸苯骨架及二苯并呋喃骨架與二苯并噻吩骨架之一者或兩者之芳香族胺衍生物及使用其之有機電致發光元件。
通常,有機電致發光(EL,Electroluminescence)元件包含陽極、陰極、及由陽極與陰極夾持之1層以上之有機薄膜層。若對兩電極間施加電壓,則自陰極側向發光區域注入電子,自陽極側向發光區域注入電洞,所注入之電子與電洞於發光區域內再結合而產生激發狀態,並於激發狀態恢復至基底狀態時放出光。因此,效率良好地將電子或電洞傳輸至發光區域,使電子與電洞之再結合變容易的化合物之開發於獲得高效率有機EL元件之方面較重要。 通常,若於高溫環境下驅動或保管有機EL元件,則產生發光色之變化、發光效率之降低、驅動電壓之上升、發光壽命之短時間化等問題。為了防止此種問題,作為電洞傳輸材料,專利文獻1揭示有具有N-咔唑基直接鍵結於9,9-二苯基茀骨架之結構之芳香族胺衍生物,專利文獻2揭示有具有3-咔唑基直接鍵結於9,9-二甲基茀骨架之結構之芳香族胺衍生物,專利文獻3揭示有具有N-咔唑基苯基經由氮原子鍵結於9,9-二苯基茀骨架之結構之芳香族胺衍生物,專利文獻4揭示有具有3-咔唑基經由氮原子鍵結於9,9-二苯基茀骨架之結構之芳香族胺衍生物。於專利文獻5中記載有具有選自茀骨架、咔唑骨架、二苯并呋喃骨架、二苯并噻吩骨架中之骨架之芳香族胺衍生物。 然而,專利文獻1~5所揭示之芳香族胺衍生物不可謂對於驅動電壓之降低、低電壓驅動時之效率及長壽命化之改善充分,業界謀求進一步之改善。 專利文獻6記載有具有聯三伸苯骨架與二苯并呋喃骨架(或二苯并噻吩骨架)之芳香族胺化合物。此種芳香族胺化合物之例示化合物之大部分必需具有咔唑骨架或末端二芳基胺基。專利文獻6進而記載有下述化合物。 [化1]上述化合物具有1-二苯并噻吩基或1-二苯并呋喃基。該等基係效率、壽命之改善效果較低,故而具有1-二苯并噻吩基或1-二苯并呋喃基之上述胺化合物之效率及壽命不充分。 因此,業界謀求可實現即便進行低電壓驅動亦為高效率且長壽命之有機EL元件的有機EL元件用材料、尤其是電洞傳輸材料之開發。 [先前技術文獻] [專利文獻] 專利文獻1:國際公開第07/148660號說明書 專利文獻2:國際公開第08/062636號說明書 專利文獻3:美國專利公開2007-0215889號公報 專利文獻4:日本專利特開2005-290000號公報 專利文獻5:國際公開第2011/021520號說明書 專利文獻6:國際公開第2012/039534號說明書
[發明所欲解決之問題] 本發明係為了解決上述課題而完成者,其目的在於提供一種可實現能夠低電壓驅動、長壽命且高效率之有機EL元件的有機EL元件用材料、例如電洞傳輸材料。 [解決問題之技術手段] 本發明者等人為了達成上述目的而進行了潛心研究,結果發現,具有聯三伸苯骨架,且具有2-或4-二苯并呋喃基及2-或4-二苯并噻吩基之一者或兩者直接或經由連結子鍵結於氮原子之結構的化合物之電洞注入性及電洞傳輸性良好,實現能夠低電壓驅動、長壽命且高效率之有機EL元件。 即,本發明提供一種下述式(1)所表示之芳香族胺衍生物, [化2](1) (式中,HAr1
表示選自下述式(2)~(5)中之基; [化3](2)(3)(4)(5) 於式(2)~(5)中,n為0~4之整數,R分別獨立地表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、鹵素原子、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之環碳數6~50之芳氧基、或氰基,於存在複數個R之情形時,該複數個R可相同亦可不同; L1
~L3
可相同亦可不同,分別獨立地表示單鍵、下述式(6)所表示之基、或式(7)所表示之基; [化4](6)(7) Ar2
表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之碳數6~50之芳氧基、或選自下述式(8)~(11)中之基;其中,Ar2
不含咔唑骨架及經取代或未經取代之胺基; [化5](8)(9)(10)(11) 於式(8)~(11)中,n為0~4之整數,R分別獨立地表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、鹵素原子、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之環碳數6~50之芳氧基、或氰基,於存在複數個R之情形時,該複數個R可相同亦可不同)。 進而,本發明提供一種有機電致發光元件,其特徵在於:其係具有陽極、陰極及於該陽極與陰極之間之1層以上之有機薄膜層,且該1層以上之有機薄膜層包含發光層者,並且該有機薄膜層之至少1層含有上述式(1)所表示之芳香族胺衍生物。 [發明之效果] 藉由使用本發明之芳香族胺衍生物,可獲得能夠低電壓驅動之長壽命、高效率有機EL元件。
於本說明書中,「經取代或未經取代之碳數a~b之X基」之表述中之「碳數a~b」表示X基為未經取代之情形時之碳數,不含X基為經取代之情形時之取代基之碳數。 又,所謂「氫原子」,包含中子數不同之同位素,即氕(protium)、氘(deuterium)及氚(tritium)。 進而,「經取代或未經取代」時之任意之取代基係選自由如下所組成之群:碳數1~50(較佳為1~10、更佳為1~5)之烷基;環碳數3~50(較佳為3~6、更佳為5或6)之環烷基;環碳數6~50(較佳為6~24、更佳為6~12)之芳基;具有環碳數6~50(較佳為6~24、更佳為6~12)之芳基之碳數1~50(較佳為1~10、更佳為1~5)之芳烷基;胺基;具有碳數1~50(較佳為1~10、更佳為1~5)之烷基之單烷基胺基或二烷基胺基;具有環碳數6~50(較佳為6~24、更佳為6~12)之芳基之單芳基胺基或二芳基胺基;具有碳數1~50(較佳為1~10、更佳為1~5)之烷基之烷氧基;具有環碳數6~50(較佳為6~24、更佳為6~12)之芳基之芳氧基;具有選自碳數1~50(較佳為1~10、更佳為1~5)之烷基及環碳數6~50(較佳為6~24、更佳為6~12)之芳基中之基之單取代矽烷基、雙取代矽烷基或三取代矽烷基;環原子數5~50(較佳為5~24、更佳為5~12)且包含1~5個(較佳為1~3個、更佳為1~2個)雜原子(氮原子、氧原子、硫原子)之雜芳基;鹵素原子(氟原子、氯原子、溴原子、碘原子);氰基;硝基。 本發明之芳香族胺衍生物具有聯三伸苯骨架,且以下述式(1)所表示。 [化6](1) 聯三伸苯骨架之平面性優異,故而本發明之芳香族胺衍生物於薄膜中其分子彼此密接地排列,薄膜之定向性良好。其結果,可降低驅動電壓。又,聯三伸苯骨架增高玻璃轉移點(Tg),故而本發明之芳香族胺衍生物之Tg較高而穩定,有機EL元件之壽命變長。 於式(1)中,HAr1
表示選自下述式(2)~(5)中之基。 [化7](2)(3)(4)(5) 若HAr1
為式(2)或(3)所表示之基,則可期待長壽命化,若為式(4)或(5)所表示之基,則可期待高效率化。 於式(2)~(5)中,n為0~4之整數,較佳為0~2之整數,尤佳為0。n=0係指不存在取代基R。 R分別獨立地表示經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之烷基、經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳基、經取代或未經取代之環原子數3~50、較佳為3~24、更佳為3~18之雜環基、鹵素原子、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之氟烷基、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之烷氧基、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之氟烷氧基、經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳氧基、或氰基。於存在複數個R之情形時,該複數個R可相同亦可不同。 作為上述碳數1~20烷基,例如可列舉甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、戊基(包含異構物)、己基(包含異構物)、庚基(包含異構物)、辛基(包含異構物)、壬基(包含異構物)、癸基(包含異構物)、十一烷基(包含異構物)、及十二烷基(包含異構物)等,較佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、及戊基(包含異構物),更佳為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、及第三丁基,尤佳為甲基及第三丁基。 作為上述環碳數6~50之芳基,例如可列舉苯基、萘基苯基、聯苯基、聯三苯基、伸聯苯基、萘基、苯基萘基、苊基、蒽基、苯并蒽基、乙烯合蒽基、菲基、苯并菲基、丙烯合萘基、茀基、9,9-二甲基茀基、7-苯基-9,9-二甲基茀基、稠五苯基、苉基、五苯基、芘基、基、苯并基、對稱二環戊二烯并苯基、不對稱二環戊二烯并苯基、丙二烯合茀基、及苝基等,較佳為苯基、萘基苯基、聯苯基、聯三苯基、萘基、9,9-二甲基茀基,更佳為苯基、聯苯基、萘基、9,9-二甲基茀基,尤佳為苯基。 上述環原子數3~50之雜環基包含至少1個、較佳為1~2個雜原子,例如氮原子、硫原子及氧原子。作為該雜環基,例如可列舉吡咯基、呋喃基、噻吩基、吡啶基、嗒𠯤基、嘧啶基、吡𠯤基、三𠯤基、咪唑基、㗁唑基、噻唑基、吡唑基、異㗁唑基、異噻唑基、㗁二唑基、噻二唑基、三唑基、吲哚基、異吲哚基、苯并呋喃基、異苯并呋喃基、苯并噻吩基、吲哚𠯤基、喹𠯤基、喹啉基、異喹啉基、噌啉基、呔𠯤基、喹唑啉基、喹㗁啉基、苯并咪唑基、苯并㗁唑基、苯并噻唑基、吲唑基、苯并異㗁唑基、苯并異噻唑基、二苯并呋喃基、二苯并噻吩基、啡啶基、吖啶基、啡啉基、啡𠯤基、啡噻𠯤基、啡㗁 𠯤基、及𠮿基等,較佳為呋喃基、噻吩基、吡啶基、嗒𠯤基、嘧啶基、吡𠯤基、三𠯤基、苯并呋喃基、苯并噻吩基、二苯并呋喃基、二苯并噻吩基,更佳為苯并呋喃基、苯并噻吩基、二苯并呋喃基、二苯并噻吩基。 上述鹵素原子為氟原子、氯原子、溴原子及碘原子,尤佳為氟原子。 作為上述碳數1~20之氟烷基,例如可列舉以氟原子取代上述碳數1~20之烷基之至少1個氫原子、較佳為1~7個氫原子所獲得之基,較佳為七氟丙基、五氟乙基、2,2,2-三氟乙基、三氟甲基,更佳為五氟乙基、2,2,2-三氟乙基、三氟甲基,尤佳為三氟甲基。 上述碳數1~20之烷氧基係以-OR10
所表示,R10
表示上述碳數1~20之烷基。作為該烷氧基,較佳為第三丁氧基、丙氧基、乙氧基、甲氧基,更佳為乙氧基、甲氧基,尤佳為甲氧基。 上述碳數1~20氟烷氧基係以-OR11
所表示,R11
表示上述碳數1~20之氟烷基。作為該氟烷氧基,較佳為七氟丙氧基、五氟乙氧基、2,2,2-三氟乙氧基、三氟甲氧基,更佳為五氟乙氧基、2,2,2-三氟乙氧基、三氟甲氧基,尤佳為三氟甲氧基。 環碳數6~50之芳氧基係以-OR12
所表示,R12
表示上述環碳數6~50之芳基。作為該芳氧基,R12
較佳為聯三苯基、聯苯基、苯基,更佳為聯苯基、苯基,尤佳為苯基。 於本發明之較佳之態樣中,式(2)~(5)之R為經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之烷基、尤佳為甲基及第三丁基;經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳基、尤佳為苯基;鹵素原子、更佳為氟原子;或氰基。又,較佳為R鍵結於2-或4-二苯并呋喃基、2-或4-二苯并噻吩基之6位及/或8位。 [化8]於式(1)中,L1
~L3
可相同亦可不同,分別獨立地表示單鍵、下述式(6)所表示之基、或式(7)所表示之基。 [化9](6)(7) 式(6)所表示之基包含鄰伸苯基、間伸苯基、及對伸苯基,式(7)所表示之基包含鄰伸聯苯基、間伸聯苯基、及對伸聯苯基。 較佳為L1
~L3
分別為單鍵、對伸苯基或對伸聯苯基,L1
尤佳為對伸苯基,L3
尤佳為單鍵、對伸苯基、或對伸聯苯基。 於式(1)中,Ar2
表示經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之烷基、經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳基、經取代或未經取代之環原子數3~50、較佳為3~24、更佳為3~18之雜環基、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之氟烷基、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之烷氧基、經取代或未經取代之碳數1~20、較佳為1~5、更佳為1~4之氟烷氧基、經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳氧基、或選自下述式(8)~(11)中之基。 [化10](8)(9)(10)(11) Ar2
所表示之烷基、芳基、雜環基、氟烷基、烷氧基、氟烷氧基、及芳氧基係與關於式(2)~(5)之R所記載之各基同樣地定義(較佳之態樣亦相同)。其中,Ar2
不含咔唑骨架及經取代或未經取代之胺基。又,HAr1
亦較佳為不含咔唑骨架及經取代或未經取代之胺基。 式(8)~(11)之R及n係與關於式(2)~(5)所記載之R及n同樣地定義(較佳之態樣亦相同),R較佳為鍵結於2-或4-二苯并呋喃基、2-或4-二苯并噻吩基之6位及/或8位。 Ar2
較佳為經取代或未經取代之環碳數6~50、較佳為6~24、更佳為6~18之芳基或選自式(8)~(11)中之基。芳基尤佳為苯基、聯苯-2-基、聯苯-3-基、聯苯-4-基、1,1':4',1''-聯三苯-4-基、1,1':3',1''-聯三苯-4-基、1,1':2',1''-聯三苯-4-基、1,1':4',1''-聯三苯-3-基、1,1':3',1''-聯三苯-3-基、1,1':2',1''-聯三苯-3-基、1,1':4',1''-聯三苯-2-基、1,1':3',1''-聯三苯-2-基、1,1':3',1''-聯三苯-2'-基、1,1':3',1''-聯三苯-4'-基、1-萘基、2-萘基、9,9-二甲基茀-2-基、9-甲基-9-苯基茀-2-基、9,9-二苯基茀-2-基、聯三伸苯-2-基、及選自式(8)~(11)中之基。 Ar2
所表示之各基亦可經選自如下基中之至少一個基取代:碳數1~20、較佳為1~5、更佳為1~4之烷基,例如甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、及第三丁基;環碳數6~50、較佳為6~24、更佳為6~18之芳基,例如苯基;鹵素原子,例如氟原子;碳數1~20、較佳為1~5、更佳為1~4之氟烷基,例如三氟甲基;碳數1~20、較佳為1~5、更佳為1~4之烷氧基,例如甲氧基;碳數1~20、較佳為1~5、更佳為1~4之氟烷氧基,例如三氟甲氧基;及氰基;但更佳為未經取代。 本發明之芳香族胺衍生物較佳為以下述式(12)所表示, [化11](12) (式中,HAr1
、Ar2
、L2
、及L3
分別為如上述式(1)中所定義) 又,亦較佳為於式(1)及(12)中L3
為單鍵、或下述式(13)或(14)所表示之基之化合物。 [化12](13)(14) 又,自上述式(12)與上述式(2)~(5)中被選作HAr1
之基部分地包含對聯苯結構。直接鍵結於中心氮原子之苯環之對位為電子密度較高且電化學性地脆弱之部位,但藉由對聯苯結構而成為並非未經取代而受苯基保護之形態,因此化合物之穩定性提高,抑制材料之劣化,結果有機EL元件長壽命化。 以下表示式(1)所表示之本發明之芳香族胺衍生物之具體例,但並不限定於下述化合物。 [化13][化14][化15][化16][化17][化18][化19][化20][化21][化22][化23][化24][化25]本發明之式(1)所表示之芳香族胺衍生物可用作有機EL元件用材料、尤其是電洞注入層材料或電洞傳輸層材料。本發明之芳香族胺衍生物之製造方法並無特別限制,只要為業者便可一面參照本說明書之實施例,一面利用及變更公知之合成反應而容易地製造。 以下,對本發明之有機EL元件構成進行說明。 作為本發明之有機EL元件之代表性之元件構成,可列舉以下(1)~(13),但並不特別限定於該等。再者,可較佳地使用(8)之元件構成。 (1)陽極/發光層/陰極 (2)陽極/電洞注入層/發光層/陰極 (3)陽極/發光層/電子注入層/陰極 (4)陽極/電洞注入層/發光層/電子注入層/陰極 (5)陽極/有機半導體層/發光層/陰極 (6)陽極/有機半導體層/電子障壁層/發光層/陰極 (7)陽極/有機半導體層/發光層/附著改善層/陰極 (8)陽極/電洞注入層/電洞傳輸層/發光層/(電子傳輸層/)電子注入層/陰極 (9)陽極/絕緣層/發光層/絕緣層/陰極 (10)陽極/無機半導體層/絕緣層/發光層/絕緣層/陰極 (11)陽極/有機半導體層/絕緣層/發光層/絕緣層/陰極 (12)陽極/絕緣層/電洞注入層/電洞傳輸層/發光層/絕緣層/陰極 (13)陽極/絕緣層/電洞注入層/電洞傳輸層/發光層/(電子傳輸層/)電子注入層/陰極 又,於本發明之有機EL元件中,本發明之芳香族胺衍生物不易結晶,可用於上述任一有機薄膜層,但就更低電壓下之驅動之觀點而言,較佳為含於電洞注入層或電洞傳輸層,更佳為含於電洞傳輸層。使用本發明之芳香族胺衍生物之有機EL元件不僅能夠低電壓驅動,而且發光效率較高,壽命較長。 使有機薄膜層、較佳為電洞注入層或電洞傳輸層含有本發明之芳香族胺衍生物之量相對於該有機薄膜層之總成分,較佳為30~100莫耳%,更佳為50~100莫耳%,進而較佳為80~100莫耳%,尤佳為實質為100莫耳%。 以下,作為較佳之形態,對使電洞傳輸層含有本發明之上述芳香族胺衍生物之構成之有機EL元件之各層進行說明。 基板 有機EL元件通常製作於透光性基板上。該透光性基板為支持有機EL元件之基板,較佳為波長400~700 nm之可見光範圍之光之透過率為50%以上者,進而較佳為使用平滑之基板。 作為此種透光性基板,例如可列舉玻璃板、合成樹脂板等。作為玻璃板,可列舉:由鈉鈣玻璃、含鋇鍶之玻璃、鉛玻璃、鋁矽酸玻璃、硼矽酸玻璃、鋇硼矽酸玻璃、石英等成形之板。又,作為合成樹脂板,可列舉:聚碳酸酯樹脂、丙烯酸系樹脂、聚對苯二甲酸乙二酯樹脂、聚醚硫醚樹脂、聚碸樹脂等之板。 陽極 陽極係擔負將電洞注入至電洞傳輸層或發光層之作用者,且較有效的是具有4 eV以上(較佳為4.5 eV以上)之功函數。作為陽極材料之具體例,可列舉:碳、鋁、釩、鐵、鈷、鎳、鎢、銀、金、鉑、鈀等及該等之合金;用於ITO(Indium Tin Oxides,氧化銦錫)基板、NESA(奈塞)基板之氧化錫、氧化銦等金屬氧化物;聚噻吩或聚吡咯等有機導電性樹脂。 陽極可藉由利用蒸鍍法或濺鍍法等方法使該等陽極材料形成薄膜而獲得。 於自陽極提取來自發光層之發光之情形時,陽極對發光之透過率較佳為大於10%。又,陽極之薄片電阻較佳為數百Ω/□以下。陽極之膜厚亦視材料不同而有所不同,通常為10 nm~1 μm,較佳為10 nm~200 nm。 陰極 作為陰極,使用有以功函數較小(未達4 eV)之金屬、合金、導電性化合物及該等之混合物作為電極物質者。作為此種電極物質之具體例,使用有鎂、鈣、錫、鉛、鈦、釔、鋰、釕、錳、鋁、氟化鋰等及該等之合金,但並不特別限定於該等。作為該合金,可列舉鎂/銀、鎂/銦、鋰/鋁等為代表例,但並不特別限定於該等。合金之比率係由蒸鍍源之溫度、氛圍、真空度等所控制,可選擇為適當之比率。若有需要,則陽極及陰極亦可由二層以上之層構成所形成。 該陰極可藉由利用蒸鍍或濺鍍等方法使該等電極物質形成薄膜而獲得。 此處,於自陰極提取來自發光層之發光之情形時,陰極對發光之透過率較佳為大於10%。又,陰極之薄片電阻較佳為數百Ω/□以下,進而,陰極之膜厚通常為10 nm~1 μm,較佳為50 nm~200 nm。 絕緣層 由於對超薄膜施加電場,故而有機EL元件容易產生因漏電或短路所致之像素缺陷。為了防止此種狀況,亦可於一對電極間插入包含絕緣性之薄膜層之絕緣層。 作為絕緣層所使用之材料,例如可列舉:氧化鋁、氟化鋰、氧化鋰、氟化銫、氧化銫、氧化鎂、氟化鎂、氧化鈣、氟化鈣、氮化鋁、氧化鈦、氧化矽、氧化鍺、氮化矽、氮化硼、氧化鉬、氧化釕、氧化釩等。再者,亦可使用該等之混合物或積層物。 發光層 有機EL元件之發光層兼具下述(1)~(3)之功能。 (1)注入功能:於施加電場時可自陽極或電洞注入層注入電洞,可自陰極或電子注入層注入電子之功能。 (2)傳輸功能:以電場力使注入之電荷(電子與電洞)遷移之功能。 (3)發光功能:提供電子與電洞之再結合之場所,並使其引起發光之功能。 向發光層注入電洞之容易性與注入電子之容易性亦可存在不同,又,由電洞遷移率與電子遷移率所表示之發光層之電洞傳輸能力及電子傳輸能力亦可不同,較佳為使任一電荷遷移。 可用於發光層之主體材料或摻雜材料並無特別限制。例如係選自萘、菲、紅螢烯、蒽、稠四苯、芘、苝、、十環烯、蔻、四苯基環戊二烯、五苯基環戊二烯、茀、螺茀、9,10-二苯基蒽、9,10-雙(苯基乙炔基)蒽、1,4-雙(9'-乙炔基蒽基)苯等縮合多聚芳香族化合物及該等之衍生物,三(8-羥基喹啉)合鋁、雙-(2-甲基-8-羥基喹啉合)-4-(苯基苯酚合)鋁等有機金屬錯合物,芳基胺衍生物、苯乙烯胺衍生物、茋衍生物、香豆素衍生物、吡喃衍生物、㗁酮衍生物、苯并噻唑衍生物、苯并㗁唑衍生物、苯并咪唑衍生物、吡𠯤衍生物、肉桂酸酯衍生物、二酮基吡咯并吡咯衍生物、吖啶酮衍生物、喹吖啶酮衍生物等。於該等中,較佳為芳基胺衍生物、苯乙烯胺衍生物,更佳為苯乙烯胺衍生物。 電洞注入層/電洞傳輸層 電洞注入層/電洞傳輸層係幫助電洞向發光層之注入,並將電洞傳輸至發光區域之層,電洞遷移率較大,離子化能通常較小為5.7 eV以下。作為此種電洞注入層/電洞傳輸層,較佳為以更低之電場強度將電洞傳輸至發光層之材料,進而,例如於施加104
~106
V/cm之電場時,電洞之遷移率較佳為10-4
cm2
/V∙秒以上。 如上所述,本發明之芳香族胺衍生物可較佳地用作電洞注入層材料、尤其是電洞傳輸層材料。電洞傳輸層可單獨由本發明之芳香族胺衍生物形成,亦可由與其他材料之混合物形成。作為與本發明之芳香族胺衍生物混合而形成電洞傳輸層之其他材料,只要為具有上述較佳之性質者則並無特別限制,可自先前於光傳導材料中作為電洞傳輸材料所慣用者、或用於有機EL元件之電洞傳輸層之公知者之中選擇任意者使用。於本發明中,將具有電洞傳輸能力,可用於電洞傳輸帶域之材料稱為電洞傳輸材料。 作為除本發明之芳香族胺衍生物以外之電洞傳輸層用之其他材料之具體例,可列舉酞菁衍生物、萘酞菁衍生物、卟啉衍生物、㗁唑、㗁二唑、三唑、咪唑、咪唑酮、咪唑硫酮、吡唑啉、吡唑啉酮、四氫咪唑、㗁唑、㗁二唑、腙、醯腙、聚芳烷、茋、丁二烯、聯苯胺型三苯胺、苯乙烯胺型三苯胺、二胺型三苯胺等、上述化合物之衍生物,及聚乙烯咔唑、聚矽烷、導電性高分子等高分子材料,但並不特別限定於該等。 作為電洞注入層用之材料,只要為具有上述較佳之性質者則並無特別限制,可自先前於光傳導材料中作為電洞注入材料所慣用者、或用於有機EL元件之電洞傳輸層之公知者中選擇任意者使用。於本發明中,將具有電洞注入能力,可用於電洞注入帶域之材料稱為電洞注入材料。亦可藉由於電洞注入材料中添加電子接受物質而增感。 於本發明之有機EL元件中,較佳為使用下述式(A)所表示之六氮聯三伸苯化合物作為電洞注入材料。 [化26]上述式(A)中,R111
~R116
分別獨立地表示氰基、-CONH2
、羧基、或-COOR117
(R117
為碳數1~20之烷基),或者R111
及R112
、R113
及R114
、或R115
及R116
合在一起表示-CO-O-CO-所表示之基。 再者,較佳為R111
~R116
相同,表示氰基、-CONH2
、羧基、或-COOR117
。又,較佳為R111
及R112
、R113
及R114
、以及R115
及R116
均合在一起表示-CO-O-CO-所表示之基。 作為於本發明之有機EL元件中可使用之其他電洞注入材料,例如可列舉:芳香族三級胺衍生物及酞菁衍生物。 作為芳香族三級胺衍生物,例如為三苯胺、三甲苯胺、甲苯基二苯胺、N,N'-二苯基-N,N'-(3-甲基苯基)-1,1'-聯苯基-4,4'-二胺、N,N,N',N'-(4-甲基苯基)-1,1'-苯基-4,4'-二胺、N,N,N',N'-(4-甲基苯基)-1,1'-聯苯基-4,4'-二胺、N,N'-二苯基-N,N'-二萘基-1,1'-聯苯基-4,4'-二胺、N,N'-(甲基苯基)-N,N'-(4-正丁基苯基)-菲-9,10-二胺、N,N-雙(4-二-4-甲苯基胺基苯基)-4-苯基-環己烷等、或具有源自該等芳香族三級胺之構成單元之低聚物或聚合物,但並不特別限定於該等。 作為酞菁(Pc)衍生物,例如有H2
Pc、CuPc、CoPc、NiPc、ZnPc、PdPc、FePc、MnPc、ClAlPc、ClGaPc、ClInPc、ClSnPc、Cl2
SiPc、(HO)AlPc、(HO)GaPc、VOPc、TiOPc、MoOPc、GaPc-O-GaPc等酞菁衍生物及萘酞菁衍生物,但並不限定於該等。又,本發明之有機EL元件較佳為於發光層與陽極之間具有含有該等芳香族三級胺衍生物及/或酞菁衍生物之層、例如上述電洞傳輸層或電洞注入層。 亦可藉由於電洞注入材料中添加電子接受物質而增感。 電子注入層/電子傳輸層 電子注入層/電子傳輸層係幫助電子向發光層之注入,並將電子傳輸至發光區域之層,電子遷移率較大。附著改善層係包含與陰極之附著特別良好之材料之電子注入層。 已知由於發出之光由電極(該情形時為陰極)反射,故而直接自陽極提取之發光與經由利用電極之反射自陽極提取之發光進行干涉。為了有效率地利用該干涉效果,電子傳輸層可於數nm~數μm之膜厚內適當選擇,但於膜厚尤其較厚時,為了避免電壓上升,而較佳為於施加104
~106
V/cm之電場時電子遷移率至少為10-5
cm2
/Vs以上。 作為電子注入層所使用之材料,具體而言,可列舉茀酮、蒽醌二甲烷、聯苯醌、噻喃二氧化物、㗁唑、㗁二唑、三唑、咪唑、苝四羧酸、亞茀基甲烷、蒽醌二甲烷、蒽酮等及該等之衍生物,但並不特別限定於該等。又,亦可藉由於電子注入材料中添加電子供應性物質而增感。 其他有效之電子注入材料為金屬錯合物化合物及含氮五員環衍生物。 作為上述金屬錯合物化合物,例如可列舉8-羥基喹啉合鋰、三(8-羥基喹啉)合鋁、雙(2-甲基-8-喹啉合)(1-萘酚合)鋁等,但並不特別限定於該等。 作為上述含氮五員環衍生物,例如較佳為㗁唑、噻唑、㗁二唑、噻二唑、三唑衍生物。 尤其是於本發明中,作為上述含氮五員環衍生物,較佳為下述式(1)~(3)之任一者所表示之苯并咪唑衍生物。 [化27]上述式(1)~(3)中,Z1
、Z2
及Z3
分別獨立地為氮原子或碳原子。 R11
及R12
分別獨立地為經取代或未經取代之環碳數6~60之芳基、經取代或未經取代之環碳數3~60之雜芳基、碳數1~20之烷基、碳數1~20之鹵烷基或碳數1~20之烷氧基。 m為0~5之整數,於m為2以上之整數時,複數個R11
相互可相同亦可不同。又,鄰接之2個R11
彼此亦可相互鍵結而形成經取代或未經取代之芳香族烴環。作為該經取代或未經取代之芳香族烴環,例如可列舉苯環、萘環、蒽環等。 Ar1
為經取代或未經取代之環碳數6~60之芳基或經取代或未經取代之環碳數3~60之雜芳基。 Ar2
為氫原子、碳數1~20之烷基、碳數1~20之鹵烷基、碳數1~20之烷氧基、經取代或未經取代之環碳數6~60之芳基或經取代或未經取代之環碳數3~60之雜芳基。 Ar3
為經取代或未經取代之環碳數6~60之伸芳基或經取代或未經取代之環碳數3~60之伸雜芳基。 L1
、L2
及L3
分別獨立地為單鍵、經取代或未經取代之環碳數6~60之伸芳基、經取代或未經取代之環原子數9~60之雜縮合環基或經取代或未經取代之伸茀基。 於本發明之有機EL元件中,亦可於含有本發明之芳香族胺衍生物之層中含有發光材料、摻雜材料、電洞注入材料或電子注入材料。 於含有發明之芳香族胺衍生物之層中,亦可視需要使用公知之發光材料、摻雜材料、電洞注入材料、電子注入材料,或者亦可使用本發明之芳香族胺衍生物作為摻雜材料。 有機EL元件可藉由形成複數層有機薄膜層而防止因淬滅(quenching)所導致之亮度或壽命之降低。若有需要則可將發光材料、摻雜材料、電洞注入材料、電子注入材料組合使用。又,亦可藉由摻雜材料而提高發光亮度或發光效率,使發光色變化。 本發明之有機EL元件之電洞傳輸層亦可設為第1電洞傳輸層(陽極側)與第2電洞傳輸層(陰極側)之2層結構。於該情形時,本發明之芳香族胺衍生物可含於第1電洞傳輸層與第2電洞傳輸層之任一者。 又,就提高藉由本發明而獲得之有機EL元件對溫度、濕度、氛圍等之穩定性之觀點而言,亦可於元件之表面設置保護層,或利用矽油、樹脂等保護元件整體。 於形成本發明之有機EL元件之各層時,可使用真空蒸鍍、濺鍍、電漿、離子鍍著等乾式成膜法,或旋轉塗佈、浸漬、流塗等濕式成膜法中之任一種方法。 於濕式成膜法之情形時,使用使形成各層之材料溶解或分散於乙醇、氯仿、四氫呋喃、二㗁烷等適當之溶劑而成之溶液或分散液形成薄膜。又,該溶液或分散液亦可包含樹脂或添加劑以提高成膜性、防止膜之針孔等。作為該樹脂,可列舉:聚苯乙烯、聚碳酸酯、聚芳酯、聚酯、聚醯胺、聚胺基甲酸酯、聚碸、聚甲基丙烯酸甲酯、聚丙烯酸甲酯、纖維素等絕緣性樹脂及該等之共聚物,聚-N-乙烯基咔唑、聚矽烷等光導電性樹脂,聚噻吩、聚吡咯等導電性樹脂。又,作為添加劑,可列舉:抗氧化劑、紫外線吸收劑、塑化劑等。 各層之膜厚並無特別限定,設為可獲得良好之元件性能之膜厚即可。若膜厚過厚,則為了獲得一定之光輸出,必需較大之施加電壓,效率變差。若膜厚過薄,則產生針孔等,即便施加電場亦無法獲得充分之發光亮度。通常之膜厚適合為5 nm~10 μm之範圍,更佳為10 nm~0.2 μm之範圍。 [實施例] 以下,藉由實施例具體說明本發明,但本發明並不受該等任何限定。 中間物合成例1-1(中間物1-1之合成) 於氬氣氛圍下,於2-溴聯三伸苯50.8 g(150.0 mmol)、二苯胺25.4 g(150.0 mmol)、第三丁醇鈉28.8 g(300.0 mmol)中添加脫水甲苯750 ml並進行攪拌。添加乙酸鈀674 mg(3.0 mmol)、三-第三丁基膦607 mg(3.0 mmol),於80℃下反應8小時。 於冷卻後,將反應混合物通過矽藻土/矽膠進行過濾,並於減壓下濃縮濾液。以甲苯使所獲得之殘渣再結晶,將其過濾取出後進行乾燥,獲得48.3 g之白色固體。藉由FD-MS(Field Desorption Mass Spectrometry,場解吸質譜分析),鑑定為下述中間物1-1。(產率82%) [化28]中間物1-1 中間物合成例1-2(中間物1-2之合成) 於氬氣氛圍下,於中間物1-1 20.0 g(50.6 mmol)中添加甲苯500 ml、乙酸乙酯300 ml並進行攪拌。添加N-溴琥珀醯亞胺18.0 g(101.2 mmol),於室溫下反應24小時。進而,添加N-溴琥珀醯亞胺1.0 g(5.6 mmol),於室溫下反應3小時。 添加水300 ml,以甲苯萃取。於將有機層以飽和食鹽水洗淨後,以MgSO4
乾燥並進行過濾、濃縮。以甲苯使所獲得之殘渣再結晶,將其過濾取出後進行乾燥,獲得24.4 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物1-2。(產率87%) [化29]中間物1-2 中間物合成例1-3(中間物1-3之合成) 於氬氣氛圍下,於2-溴聯三伸苯49.1 g(160.0 mmol)、4-氯苯基硼酸25.0 g(160.0 mmol)、Pd[PPh3
]4
3.7 g(3.20 mmol)中添加甲苯500 ml、二甲氧基乙烷300 ml、2 M之Na2
CO3
水溶液160 ml(320.0 mmol),並加熱回流攪拌30小時。 於反應結束後,冷卻至室溫,將試樣移至分液漏斗並以二氯甲烷萃取。於以MgSO4
乾燥有機層後,進行過濾、濃縮。以甲苯使所獲得之殘渣再結晶,將其過濾取出後進行乾燥,獲得49.0 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物1-3。(產率90%) [化30]中間物1-3 中間物合成例1-4(中間物1-4之合成) 於中間物合成例1-1中,使用中間物1-3 30.0 g來代替2-溴聯三伸苯,除此以外,同樣地進行反應,結果獲得30.0 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物1-4。(產率71%) [化31]中間物1-4 中間物合成例1-5(中間物1-5之合成) 於中間物合成例1-2中,使用中間物1-4 30.0 g來代替中間物1-1,除此以外,同樣地進行反應,結果獲得25.4 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物1-5。(產率63%) [化32]中間物1-5 中間物合成例2-1(中間物2-1之合成) 於氬氣氛圍下,於4-碘溴苯28.3 g(100.0 mmol)、二苯并呋喃-4-硼酸22.3 g(105.0 mmol)、Pd[PPh3
]4
2.31 g(2.00 mmol)中添加甲苯150 ml、二甲氧基乙烷150 ml、2 M之Na2
CO3
水溶液150 ml(300.0 mmol),並加熱回流攪拌10小時。 於反應結束後,冷卻至室溫,將試樣移至分液漏斗並以二氯甲烷萃取。於以MgSO4
乾燥有機層後,進行過濾、濃縮。利用矽膠管柱層析法純化濃縮殘渣,獲得26.2 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-1。(產率81%) [化33]中間物2-1 中間物合成例2-2(中間物2-2之合成) 於氬氣氛圍下,於4'-溴乙醯苯胺24.0 g(112.0 mmol)、二苯并呋喃-4-硼酸28.6 g(135.0 mmol)、Pd[PPh3
]4
2.6 g(2.24 mmol)中添加甲苯450 ml、二甲氧基乙烷100 ml、2 M之Na2
CO3
水溶液110 ml(220.0 mmol),並加熱回流攪拌10小時。 於反應結束後,冷卻至室溫,過濾析出之晶體。使所獲得之晶體溶解於四氫呋喃,通過矽藻土/矽膠進行過濾,並於減壓下濃縮濾液。以甲醇/己烷洗淨所獲得之殘渣並加以乾燥,獲得18.0 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-2。(產率53%) [化34]中間物2-2 中間物合成例2-3(中間物2-3之合成) 於中間物2-2 18.0 g(59.7 mmol)中添加二甲苯120 ml、水1200 ml、乙醇60 ml並進行攪拌。添加氫氧化鉀20.0 g(360.0 mmol),並加熱回流攪拌10小時。 於反應結束後,冷卻至室溫,將試樣移至分液漏斗並以二甲苯萃取。於以MgSO4
乾燥有機層後,進行過濾、濃縮。以二甲苯使所獲得之殘渣再結晶,將其過濾取出後進行乾燥,獲得14.7 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-3。(產率95%) [化35]中間物2-3 中間物合成例2-4(中間物2-4之合成) 於氮氣氛圍下,於二苯并呋喃150 g(0.89 mol)中添加乙酸1000 ml並使之加熱溶解。進而,於滴加添加溴188 g(1.18 mol)後,於室溫下攪拌20小時。過濾取出析出之晶體,並依序以乙酸、水洗淨。利用甲醇使粗產物重複數次再結晶,獲得66.8 g之白色晶體。藉由FD-MS之分析,鑑定為下述中間物2-4。(產率30%) [化36]中間物2-4 中間物合成例2-5(中間物2-5之合成) 於氬氣氛圍下,於中間物2-4 24.7 g(100.0 mmol)中添加脫水四氫呋喃400 ml,並冷卻至-40℃。進而,緩緩添加1.6 M濃度之正丁基鋰之己烷溶液63 ml(100.0 mmol)。於將反應溶液一面加溫至0℃一面攪拌1小時後,再次將反應溶液冷卻至-78℃,並滴加添加硼酸三甲酯26.0 g(250.0 mmol)之50 ml脫水四氫呋喃溶液。於滴加後,將反應溶液於室溫下攪拌5小時。於添加1 N鹽酸200 ml並攪拌1小時後,去除水層。以MgSO4
乾燥有機層,並於減壓下蒸餾去除溶劑。以甲苯洗淨所獲得之固體,獲得15.2 g之白色晶體。(產率72%) [化37]中間物2-5 中間物合成例2-6(中間物2-6之合成) 於氬氣氛圍下,於4-碘溴苯28.3 g(100.0 mmol)、中間物2-5 22.3 g(105.0 mmol)、Pd[PPh3
]4
2.31 g(2.00 mmol)中添加甲苯150 ml、二甲氧基乙烷150 ml、2 M之Na2
CO3
水溶液150 ml(300.0 mmol),並加熱回流攪拌10小時。 於反應結束後,將試樣移至分液漏斗並以二氯甲烷萃取。於以MgSO4
乾燥有機層後,進行過濾、濃縮。利用矽膠管柱層析法純化濃縮殘渣,獲得24.2 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-6。(產率75%) [化38]中間物2-6 中間物合成例2-7(中間物2-7之合成) 於合成例2-5中,使用2-溴二苯并噻吩26.3 g來代替中間物2-4,除此以外,同樣地進行反應,結果獲得14.8 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-7。(產率65%) [化39]中間物2-7 中間物合成例2-8(中間物2-8之合成) 於氬氣氛圍下,於2-溴聯三伸苯16.9 g(50.0 mmol)、中間物2-3 13.0 g(50.0 mmol)、第三丁醇鈉9.6 g(100.0 mmol)中添加脫水甲苯250 ml並進行攪拌。添加乙酸鈀225 mg(1.0 mmol)、三-第三丁基膦202 mg(1.0 mmol),於80℃下反應8小時。 於冷卻後,將反應混合物通過矽藻土/矽膠進行過濾,並於減壓下濃縮濾液。以甲苯使所獲得之殘渣再結晶,將其過濾取出後進行乾燥,獲得19.9 g之白色固體。藉由FD-MS之分析,鑑定為下述中間物2-8。(產率82%) [化40]中間物2-8 合成實施例1(芳香族胺衍生物(H1)之製造) 於氬氣氛圍下,於中間物1-2 8.3 g(15.0 mmol)、二苯并呋喃-4-硼酸7.0 g(33.0 mmol)、Pd[PPh3
]4
0.87 g(0.75 mmol)中添加甲苯50 ml、二甲氧基乙烷25 ml、2 M之Na2
CO3
水溶液23 ml(46.0 mmol),並加熱回流攪拌10小時。 於反應結束後,將試樣移至分液漏斗並以甲苯進行萃取。於以MgSO4
乾燥有機層後,進行過濾、濃縮。利用矽膠管柱層析法純化濃縮殘渣。以甲苯使所獲得之粗產物再結晶,過濾取出後進行乾燥,獲得7.9 g之白色固體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H1)。(產率72%) [化41]H1 合成實施例2(芳香族雜環衍生物(H2)之製造) 於合成實施例1中,使用中間物2-5 7.0 g來代替二苯并呋喃-4-硼酸,除此以外,同樣地進行反應,結果獲得6.9 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H2)。(產率63%) [化42]H2 合成實施例3(芳香族雜環衍生物(H3)之製造) 於合成實施例1中,使用中間物2-7 6.8 g來代替二苯并呋喃-4-硼酸,除此以外,同樣地進行反應,結果獲得3.4 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H3)。(產率33%) [化43]H3 合成實施例4(芳香族雜環衍生物(H4)之製造) 於氬氣氛圍下,於中間物2-6 3.2 g(10.0 mmol)、中間物2-8 4.9 g(10.0 mmol)、Pd2
(dba)3
0.14 g(0.15 mmol)、P(tBu)3
HBF4
0.087 g(0.3 mmol)、第三丁醇鈉1.9 g(20.0 mmol)中添加無水二甲苯50 ml,並加熱回流8小時。 於反應結束後,將反應液冷卻至50℃,通過矽藻土、及矽膠進行過濾,並濃縮濾液。利用矽膠管柱層析法純化所獲得之濃縮殘渣,獲得白色固體。以甲苯使粗產物再結晶,獲得3.6 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族雜環衍生物(H4)。(產率50%) [化44]H4 合成實施例5(芳香族雜環衍生物(H5)之製造) 於合成實施例4中,使用4-溴聯三苯3.1 g來代替中間物2-6,除此以外,同樣地進行反應,結果獲得3.9 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H5)。(產率55%) [化45]H5 合成實施例6(芳香族雜環衍生物(H6)之製造) 於合成實施例4中,使用2-溴-9,9-二甲基茀2.7 g來代替中間物2-6,除此以外,同樣地進行反應,結果獲得3.5 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H6)。(產率52%) [化46]H6 合成實施例7(芳香族雜環衍生物(H7)之製造) 於合成實施例1中,使用中間物1-5 9.4 g來代替中間物1-2,除此以外,同樣地進行反應,結果獲得4.1 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H7)。(產率32%) [化47]H7 合成實施例8(芳香族雜環衍生物(H8)之製造) 於合成實施例1中,使用二苯并噻吩-4-硼酸6.8 g來代替二苯并呋喃-4-硼酸,除此以外,同樣地進行反應,結果獲得3.0 g之白色晶體。藉由FD-MS之分析,鑑定為下述芳香族胺衍生物(H8)。(產率26%) [化48]H8 實施例1 有機EL元件之製作 將25 mm×75 mm×1.1 mm之附有ITO透明電極線之玻璃基板(Geomatec公司製造)於異丙醇中進行超音波洗淨5分鐘,進而,進行UV(Ultraviolet,紫外線)臭氧洗淨30分鐘。 將洗淨後之附有透明電極線之玻璃基板安裝於真空蒸鍍裝置之基板座,首先,以於形成有透明電極線之面上覆蓋上述透明電極之方式蒸鍍下述電子接受性化合物(A),成膜膜厚5 nm之膜A。 於該膜A上,蒸鍍下述芳香族胺衍生物(TPTE,N,N-bis(phenyl)-N,N-bis(4-(N,N-bis(phenylamino)biphenyl-4-yl)benzidine,N,N-雙(苯基)-N,N-雙(4-(N,N-雙(苯基胺基)聯苯-4-基)聯苯胺)作為第1電洞傳輸材料,成膜膜厚65 nm之第1電洞傳輸層。 繼第1電洞傳輸層之成膜後,蒸鍍上述芳香族胺衍生物(H1)作為第2電洞傳輸材料,成膜膜厚10 nm之第2電洞傳輸層。 於該電洞傳輸層上共蒸鍍作為第一主體材料之化合物(host1-X)、作為第二主體材料之化合物(host2-X)、及作為磷光發光性摻雜物材料之Ir(bzq)3
。藉此,形成顯示綠色發光之厚度25 nm之發光層。再者,將磷光發光性摻雜物材料之濃度設為10質量%,將第一主體材料之濃度設為45質量%,將第二主體材料之濃度設為45質量%。 接著,於該磷光發光層上依序積層厚度35 nm之化合物(C)膜、厚度1 nm之LiF膜、厚度80 nm之金屬Al膜,形成陰極。再者,作為電子注入性電極之LiF係以1 Å/min之成膜速度形成。 [化49]實施例2~8 有機EL元件之製作 使用表1中記載之上述芳香族胺衍生物作為第2電洞傳輸材料,除此以外,以與實施例1相同之方式製作實施例2~8之各有機EL元件。 比較例1、2 有機EL元件之製作 使用表1中記載之下述比較化合物1或2作為第2電洞傳輸材料,除此以外,以與實施例1相同之方式製作比較例1、2之各有機EL元件。比較化合物1係專利文獻6所記載之化合物(段落104)。 [化50](比較化合物1)(比較化合物2) (有機EL元件之發光性能評價) 利用直流電流驅動使以上述方式製作之有機EL元件發光,測定亮度(L)、電流密度,並根據測定結果求出電流密度10 mA/cm2
下之電流效率(L/J)、驅動電壓(V)。進而求出電流密度50 mA/cm2
下之元件壽命。所謂80%壽命係指於定電流驅動時,亮度衰減至初始亮度之80%之時間。將結果示於表1。 [表1]
由表1之結果可知,藉由使用本發明之芳香族胺衍生物,可獲得即便以低電壓驅動亦為高效率且長壽命之有機EL元件。
無
Claims (20)
- 一種芳香族胺衍生物,其係以下述式(1)所表示, [化1](1) (式中,HAr1 表示選自下述式(2)~(5)中之基; [化2](2)(3)(4)(5) (於式(2)~(5)中,n為0~4之整數,R分別獨立地表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、鹵素原子、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之環碳數6~50之芳氧基、或氰基,於存在複數個R之情形時,該複數個R可相同亦可不同) L1 及L2 可相同亦可不同,分別獨立地表示單鍵、下述式(6)所表示之基、或式(7)所表示之基;(6)(7) L3 表示單鍵; Ar2 表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之碳數6~50之芳氧基、或選自下述式(8)~(11)中之基;其中,Ar2 不含咔唑骨架及經取代或未經取代之胺基;(8)(9)(10)(11) (於式(8)~(11)中,n為0~4之整數,R分別獨立地表示經取代或未經取代之碳數1~20之烷基、經取代或未經取代之環碳數6~50之芳基、經取代或未經取代之環原子數3~50之雜環基、鹵素原子、經取代或未經取代之碳數1~20之氟烷基、經取代或未經取代之碳數1~20之烷氧基、經取代或未經取代之碳數1~20之氟烷氧基、經取代或未經取代之環碳數6~50之芳氧基、或氰基,於存在複數個R之情形時,該複數個R可相同亦可不同))。
- 如請求項1之芳香族胺衍生物,其中Ar2 為選自上述式(8)~(11)中之基。
- 如請求項1之芳香族胺衍生物,其中式(8)~(11)之n為0。
- 如請求項1之芳香族胺衍生物,其中Ar2 為經取代或未經取代之環碳數6~50之芳基。
- 如請求項1之芳香族胺衍生物,其中Ar2 為經取代或未經取代之環碳數6~50之芳基,該芳基為苯基、萘基苯基、聯苯基、聯三苯基、伸聯苯基、萘基、苯基萘基、苊基、蒽基、苯并蒽基、乙烯合蒽基、菲基、苯并菲基、丙烯合萘基、茀基、9,9-二甲基茀基、7-苯基-9,9-二甲基茀基、稠五苯基、苉基、五苯基、芘基、基、苯并基、對稱二環戊二烯并苯基、不對稱二環戊二烯并苯基、丙二烯合茀基、或苝基。
- 如請求項1之芳香族胺衍生物,其中Ar2 為經取代或未經取代之環碳數6~50之芳基,該芳基為苯基、萘基苯基、聯苯基、聯三苯基、萘基、9,9-二甲基茀基。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示上述經取代或未經取代之碳數1~20之烷基,該烷基為甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基、戊基(包含異構物)、己基(包含異構物)、庚基(包含異構物)、辛基(包含異構物)、壬基(包含異構物)、癸基(包含異構物)、十一烷基(包含異構物)、或十二烷基(包含異構物)。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示經取代或未經取代之環原子數3~50之雜環基,該雜環基為吡咯基、呋喃基、噻吩基、吡啶基、嗒𠯤基、嘧啶基、吡𠯤基、三𠯤基、咪唑基、㗁唑基、噻唑基、吡唑基、異㗁唑基、異噻唑基、㗁二唑基、噻二唑基、三唑基、吲哚基、異吲哚基、苯并呋喃基、異苯并呋喃基、苯并噻吩基、吲哚𠯤基、喹𠯤基、喹啉基、異喹啉基、噌啉基、呔𠯤基、喹唑啉基、喹㗁啉基、苯并咪唑基、苯并㗁唑基、苯并噻唑基、吲唑基、苯并異㗁唑基、苯并異噻唑基、二苯并呋喃基、二苯并噻吩基、啡啶基、吖啶基、啡啉基、啡𠯤基、啡噻𠯤基、啡㗁𠯤基、或𠮿基。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示經取代或未經取代之碳數1~20之氟烷基,該氟烷基為七氟丙基、五氟乙基、2,2,2-三氟乙基或三氟甲基。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示經取代或未經取代之碳數1~20之烷氧基,該烷氧基為第三丁氧基、丙氧基、乙氧基或甲氧基。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示經取代或未經取代之碳數1~20之氟烷氧基,該氟烷氧基為七氟丙氧基、五氟乙氧基、2,2,2-三氟乙氧基或三氟甲氧基。
- 如請求項1之芳香族胺衍生物,其中當Ar2 表示經取代或未經取代之碳數6~50之芳氧基,該芳氧基係以-OR12 所表示,R12 為未經取代之碳數6~50之芳基,該芳基為苯基、萘基苯基、聯苯基、聯三苯基、伸聯苯基、萘基、苯基萘基、苊基、蒽基、苯并蒽基、乙烯合蒽基、菲基、苯并菲基、丙烯合萘基、茀基、9,9-二甲基茀基、7-苯基-9,9-二甲基茀基、稠五苯基、苉基、五苯基、芘基、基、苯并基、對稱二環戊二烯并苯基、不對稱二環戊二烯并苯基、丙二烯合茀基、或苝基。
- 如請求項1之芳香族胺衍生物,其中式(6)所表示之基為鄰伸苯基、間伸苯基或對伸苯基,式(7)所表示之基為鄰伸聯苯基、間伸聯苯基或對伸聯苯基。
- 如請求項1之芳香族胺衍生物,其中L1 及L2 分別為單鍵、對伸苯基或對伸聯苯基。
- 如請求項1之芳香族胺衍生物,其係以下述式(12)所表示, [化5](12) (式中,HAr1 、Ar2 、L2 、及L3 分別為如上述式(1)中所定義)。
- 如請求項1之芳香族胺衍生物,其中HAr1 為不含咔唑骨架及經取代或未經取代之胺基。
- 如請求項1之芳香族胺衍生物,其中式(2)~(5)之n為0。
- 如請求項1之芳香族胺衍生物,其中,「經取代或未經取代」時之任意之取代基係選自由如下所組成之群:碳數1~50之烷基;環碳數3~50之環烷基;環碳數6~50之芳基;具有環碳數6~50之芳基之碳數1~50之芳烷基;胺基;具有碳數1~50之烷基之單烷基胺基或二烷基胺基;具有環碳數6~50之芳基之單芳基胺基或二芳基胺基;具有碳數1~50之烷基之烷氧基;具有環碳數6~50之芳基之芳氧基;具有選自碳數1~50之烷基及環碳數6~50之芳基中之基之單取代矽烷基、雙取代矽烷基或三取代矽烷基;環原子數5~50且包含1~5個雜原子之雜芳基;鹵素原子;氰基及硝基。
- 一種有機電致發光元件,其特徵在於:其係具有陽極、陰極及於該陽極與陰極之間之1層以上之有機薄膜層,且該1層以上之有機薄膜層包含發光層者,並且該有機薄膜層之至少1層含有如請求項1至18中任一項之芳香族胺衍生物。
- 如請求項19之有機電致發光元件,其中上述有機薄膜層具有電洞注入層或電洞傳輸層,且該電洞注入層或電洞傳輸層含有上述芳香族胺衍生物。
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CN107266399A (zh) * | 2012-08-30 | 2017-10-20 | 出光兴产株式会社 | 芳香族胺衍生物以及使用其的有机电致发光元件 |
US9748492B2 (en) | 2012-11-02 | 2017-08-29 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device |
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TWI706943B (zh) * | 2019-10-31 | 2020-10-11 | 昱鐳光電科技股份有限公司 | 胺基氧芴化合物及其有機電激發光元件 |
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CN104662010A (zh) | 2015-05-27 |
KR20150046069A (ko) | 2015-04-29 |
TW201408654A (zh) | 2014-03-01 |
JPWO2014034793A1 (ja) | 2016-08-08 |
EP2891653A1 (en) | 2015-07-08 |
KR102196594B1 (ko) | 2020-12-30 |
WO2014034793A1 (ja) | 2014-03-06 |
CN104662010B (zh) | 2017-08-25 |
CN107266399A (zh) | 2017-10-20 |
JP6367117B2 (ja) | 2018-08-01 |
EP3312167A1 (en) | 2018-04-25 |
EP2891653A4 (en) | 2016-04-20 |
JP2018016638A (ja) | 2018-02-01 |
TWI646089B (zh) | 2019-01-01 |
US20150263292A1 (en) | 2015-09-17 |
EP2891653B1 (en) | 2018-01-17 |
US10985325B2 (en) | 2021-04-20 |
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