TW201610590A - 圖型形成方法 - Google Patents
圖型形成方法 Download PDFInfo
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- TW201610590A TW201610590A TW104109181A TW104109181A TW201610590A TW 201610590 A TW201610590 A TW 201610590A TW 104109181 A TW104109181 A TW 104109181A TW 104109181 A TW104109181 A TW 104109181A TW 201610590 A TW201610590 A TW 201610590A
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- TW
- Taiwan
- Prior art keywords
- ruthenium
- group
- film
- containing film
- forming method
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000203 mixture Substances 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 32
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 239000007864 aqueous solution Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 13
- 150000002222 fluorine compounds Chemical class 0.000 claims abstract description 10
- 239000002253 acid Substances 0.000 claims abstract description 8
- 125000005843 halogen group Chemical group 0.000 claims abstract description 8
- 125000000962 organic group Chemical group 0.000 claims abstract description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 92
- 229910052707 ruthenium Inorganic materials 0.000 claims description 92
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 53
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 37
- 239000000243 solution Substances 0.000 claims description 37
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 36
- -1 decane compound Chemical class 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 229910021529 ammonia Inorganic materials 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000003960 organic solvent Substances 0.000 claims description 12
- 125000003118 aryl group Chemical group 0.000 claims description 11
- 229910052731 fluorine Inorganic materials 0.000 claims description 11
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 9
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 125000001153 fluoro group Chemical group F* 0.000 claims description 7
- 125000004018 acid anhydride group Chemical group 0.000 claims description 6
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 6
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- 125000005196 alkyl carbonyloxy group Chemical group 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 125000004966 cyanoalkyl group Chemical group 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 150000003304 ruthenium compounds Chemical class 0.000 claims description 2
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- 239000007859 condensation product Substances 0.000 abstract description 2
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- 239000010703 silicon Substances 0.000 abstract 6
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
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- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
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- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- WJMXTYZCTXTFJM-UHFFFAOYSA-N 1,1,1,2-tetraethoxydecane Chemical compound C(C)OC(C(OCC)(OCC)OCC)CCCCCCCC WJMXTYZCTXTFJM-UHFFFAOYSA-N 0.000 description 2
- APFRUMUZEFOCFO-UHFFFAOYSA-N 1-methoxybutan-1-ol Chemical compound CCCC(O)OC APFRUMUZEFOCFO-UHFFFAOYSA-N 0.000 description 2
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- PZKBIVOXIFYDRI-UHFFFAOYSA-N CC(C(OCC)(OCC)OCC)CCCCCCCC Chemical compound CC(C(OCC)(OCC)OCC)CCCCCCCC PZKBIVOXIFYDRI-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 2
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- 238000003384 imaging method Methods 0.000 description 2
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Abstract
本發明係一種圖型形成方法,其具有下列步驟:於基板之一面側形成阻劑下層膜之步驟、於上述阻劑下層膜之與上述基板相反面側形成含矽膜之步驟、及以鹼性水溶液去除上述含矽膜之步驟,在上述含矽膜形成步驟之後且上述含矽膜去除步驟前,不具有以含有酸或氟化合物之處理液處理上述含矽膜之步驟。上述含矽膜較好係由含有全部矽化合物中60莫耳%以上之以下述式(1)表示之化合物之組成物之水解縮合物所形成。
SiX4 (1)
(式(1)中,X為鹵原子或-OR2,R2為1價有機基)。
Description
本發明係關於圖型形成方法。
半導體等之製造領域中,已進展使用多層阻劑製程之圖型微細化以獲得更高的積體度。該多層阻劑製程首先係於基板上形成含矽膜等無機膜後,在該無機膜上使用阻劑組成物等形成與無機膜之蝕刻選擇比不同之阻劑膜。接著利用曝光轉印遮罩圖型,以顯像液顯像而獲得阻劑圖型。接著,以乾蝕刻將該阻劑圖型轉印於無機膜上,藉由將該無機膜之圖型轉印於最終之基板上而獲得形成期望圖型之基板。
實際之半導體等之製造步驟中,使上述含矽膜或上述阻劑膜圖型化時產生缺陷時,有時會進行再加工。再加工時,無機膜為含矽膜時,為了剝離該含矽膜,已提案以含有硫酸離子及/或氟離子之酸性剝離液處理之步驟後,以鹼性剝離液處理之濕式剝離方法(參照日本特開2010-139764號公報),或含有氟化物源與銨鹽之濕式剝離組成物(參照日本特表2010-515107號公報),使用
高濃度氟化氫水溶液之濕式剝離或乾式剝離(參照日本特開2010-85912號公報)等。然而,使用上述過去之乾式剝離或酸性剝離液或含有氟離子之液體之濕式剝離方法中,會有基板受到較大損傷之缺點。且,乾式蝕刻後之含矽膜或其殘留物會有使濕式剝離性降低之傾向,亦要求改善。
〔專利文獻1〕日本特開2010-139764號公報
〔專利文獻2〕日本特表2010-515107號公報
〔專利文獻3〕日本特開2010-85912號公報
本發明係基於如上述之情況而完成者,其目的係提供一種圖型形成方法,該方法不使用對基板造成較大損傷之酸性剝離液或氟化合物,且不管蝕刻前後,均可去除含矽膜。
用以解決上述課題之發明係一種圖型形成方法,其具有下列步驟:於基板之一面側形成阻劑下層膜之步驟(以下亦稱為「阻劑下層膜形成步驟」)、於上述阻
劑下層膜之與上述基板相反面側形成含矽膜之步驟(以下亦稱為「含矽膜形成步驟」)、及以鹼性水溶液去除上述含矽膜之步驟(以下亦稱為「含矽膜去除步驟」)。
依據本發明之圖型形成方法,可不使用對基板造成較大損傷之酸性剝離液或氟化合物,且不管蝕刻前後,均可去除含矽膜。藉此,可再度形成含氟膜進行再加工。據此,該圖型形成方法可應用於今後預測將進行更微細化之半導體裝置之製造。
本發明之圖型形成方法具有阻劑下層膜形成步驟、含矽膜形成步驟、及含矽膜去除步驟。該圖型形成方法通常係在上述含矽膜形成步驟後且上述含矽膜去除步驟前,進一步具有於上述含矽膜上形成阻劑圖型之步驟(以下亦稱為「阻劑圖型形成步驟」),及以上述阻劑圖型作為遮罩而蝕刻上述含矽膜之步驟(以下亦稱為「蝕刻步驟」)。惟,在上述含矽膜形成步驟之後且上述含矽膜去除步驟前,不具有以含有酸或氟化合物之處理液處理上述含矽膜之步驟。
依據該圖型形成方法,由於使用鹼性水溶
液,故不使用對基板造成較大損傷之酸性剝離液或氟化合物,且不管蝕刻前後,均可去除含矽膜。據此,可再度形成含矽膜而再加工。以下針對各步驟加以說明。
本步驟係於基板之一面側上形成阻劑下層膜。上述基板列舉為例如氧化矽、氮化矽、氧氮化矽、聚矽氧烷等絕緣膜,以及市售品的AMAT公司製造之「BLACK DIAMOND」、Dow化學製之「SILK」、JSR公司之「LKD5109」等之以低介電體絕緣膜被覆之晶圓等之層間絕緣膜等。亦包含多晶矽或於多晶矽中注入金屬成分之所謂金屬閘極膜等。且,該基板亦可使用配線溝(溝槽)、栓溝(貫穿孔)等經圖型化之基板。
上述阻劑下層膜列舉為例如使用阻劑下層膜用組成物形成之有機膜、以過去習知之CVD(化學蒸氣沉積)法形成之碳膜等。阻劑下成膜形成組成物可使用過去習知者,列舉為例如JSR公司之NFC HM8005等。阻劑下層膜之形成方法可藉由塗佈於基板上,而形成阻劑下層膜組成物之塗膜,且使該塗膜經加熱處理,或藉由進行紫外光照射及加熱處理予以硬化而形成。塗佈阻劑下層膜形成組成物之方法列舉為例如旋轉塗佈法、輥塗佈法、浸漬法等。又,加熱溫度之下限較好為150℃,更好為180℃。加熱溫度之上限較好為500℃,更好為350℃。加熱時間之下限較好為30秒,更好為45秒。加熱時間之上限較好
為1,200秒,更好為600秒。阻劑下層膜之平均厚度之下限較好為50nm。上述平均厚度之上限較好為500nm。
此外,上述基板表面或上述阻劑下層膜上亦可形成與該阻劑下層膜不同之其他下層膜。其他下層膜為賦予抗反射功能、塗佈膜平坦性、對於CF4等氟系氣體之高蝕刻耐性等之膜。其他下層膜可使用例如JSR公司之NFC HM8005等之市售品形成。
本步驟係在上述阻劑下層膜之與上述基板相反之面側形成含矽膜。含矽膜係藉由例如將含矽膜形成組成物等塗佈於上述阻劑下層膜之與上述基板相反之面側上而形成。針對含矽膜形成組成物敘述於後。含矽膜形成組成物之塗佈方法列舉為例如旋轉塗佈、澆鑄塗佈、輥塗佈等。又,形成之含矽膜之平均厚度之下限較好為10nm,更好為20nm。上述平均厚度之上限較好為1,000nm,更好為500nm,又更好為300nm。
含矽膜形成組成物含有〔A〕聚矽氧烷及〔B〕有機溶劑。且,上述含矽膜形成組成物只要不損及本發明效果,亦可含有交聯促進劑等其他任意成分作為較佳成分。以下,針對各成分加以說明。
〔A〕聚矽氧烷之構造並未特別限制,但較好為包含以下述式(2)表示之矽烷化合物(以下亦稱為「矽烷化合物(a)」)之化合物之水解縮合物。藉由使用該〔A〕聚矽氧烷,可提高所形成之阻劑圖型之圖型崩塌耐性,並且在後述之含矽膜去除步驟中可更有效地去除所得含矽膜。
【化1】R1 aSiX4-a (2)
上述式(2)中,R1為氫原子、氟原子、碳數1~5之烷基、氰基、氰基烷基、烷基羰氧基、酸酐基、烯基、芳基或芳烷基。該烷基亦可經氟原子取代,芳基及芳烷基亦可經取代。X為鹵素原子或-OR2。R2為1價有機基。a為0~3之整數。R1及X各為複數時,複數的R1可相同亦可不同,複數個X可相同亦可不同。
以上述R1表示之碳數1~5之烷基列舉為例如甲基、乙基、正丙基、正丁基、正戊基等直鏈狀之烷基;異丙基、異丁基、第二丁基、第三丁基、異戊基等分支狀之烷基等。
以上述R1表示之經氟原子取代之碳數1~5之烷基列舉為例如氟甲基、二氟甲基、三氟甲基、氟乙基、二氟乙基、三氟乙基、全氟乙基、全氟正丙基、六氟異丙基、全氟丁基等。
以上述R1表示之氰基烷基列舉為例如氰基乙基、氰基丙基等。
以上述R1表示之烷基羰氧基列舉為例如甲基羰氧基、乙基羰氧基、丙基羰氧基、丁基羰氧基等。
以上述R1表示之烯基列舉為例如以下述式(i-1)表示之基等。
CH2=CH-(CH2)n-* (i-1)
上述式(i-1)中,n為0~4之整數。*表示鍵結鍵。
上述n較好為0或1,更好為0(乙烯基)。
以上述R1表示之芳基列舉為例如苯基、萘基、甲基苯基、乙基苯基等。
以上述R1表示之芳烷基列舉為例如苄基、苯乙基、苯丙基、萘甲基等。
上述芳基及芳烷基可具有之取代基列舉為例如氟原子、氯原子、溴原子、碘原子等鹵原子,羥基、羧基、氰基、硝基、烷氧基、芳氧基、醯基、胺基、取代胺基等。
以上述X表示之鹵原子列舉為例如氟原子、氯原子等。
上述-OR2中之以R2表示之1價有機基列舉為例如甲基、乙基、正丙基、異丙基、正丁基、異丁基、第二丁基、第三丁基等碳數1~4之烷基等。
上述a較好為0~2之整數。
矽烷化合物(a)例示為含芳香環之三烷氧基
矽烷、烷基三烷氧基矽烷、烷基三芳氧基矽烷、烯基三烷氧基矽烷、烷基三鹵基矽烷、含酸酐基之三烷氧基矽烷等3官能矽烷化合物,四烷氧基矽烷、四芳氧基矽烷、四鹵基矽烷等4官能矽烷化合物等。
上述含芳香環之三烷氧基矽烷之具體例列舉為例如苯基三甲氧基矽烷、苄基三甲氧基矽烷、苯乙基三甲氧基矽烷、甲基苯基三甲氧基矽烷、乙基苯基三甲氧基矽烷、甲氧基苯基三甲氧基矽烷、苯氧基苯基三甲氧基矽烷、羥基苯基三甲氧基矽烷、胺基苯基三甲氧基矽烷、二甲胺基苯基三甲氧基矽烷、乙醯基胺基苯基三甲氧基矽烷、2,4,6-三甲基苯基三甲氧基矽烷、甲基苄基三甲氧基矽烷、乙基苄基三甲氧基矽烷、甲氧基苄基三甲氧基矽烷、苯氧基苄基三甲氧基矽烷、羥基苄基三甲氧基矽烷、胺基苄基三甲氧基矽烷、二甲胺基苄基三甲氧基矽烷、乙醯基胺基苄基三甲氧基矽烷等。
上述烷基三烷氧基矽烷之具體例列舉為甲基三甲氧基矽烷、甲基三乙氧基矽烷、甲基參(二甲基矽氧基)矽烷、甲基參(甲氧基乙氧基)矽烷、乙基三甲氧基矽烷、乙基三乙氧基矽烷等。
上述烯基三烷氧基矽烷之具體例列舉為乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、烯丙基三甲氧基矽烷、烯丙基三乙氧基矽烷等。
上述含酸酐基之三烷氧基矽烷之具體例列舉為(三甲氧基矽烷基)乙基丁二酸酐、(三乙氧基矽烷
基)丙基丁二酸酐等。
上述其他3官能矽烷化合物之具體例列舉為甲基三乙醯氧基矽烷、甲基三氯矽烷、乙基三乙醯氧基矽烷、乙基三氯矽烷、甲基三苯氧基矽烷、乙基三苯氧基矽烷、乙烯基三苯氧基矽烷、烯丙基三苯氧基矽烷等。
上述4官能矽烷化合物之具體例列舉為四甲氧基矽烷、四乙氧基矽烷、四正丙氧基矽烷、四異丙氧基矽烷、四正丁氧基矽烷、四-第二丁氧基矽烷、四-第三丁氧基矽烷等之四烷氧基矽烷類;
四苯氧基基矽烷、四氯矽烷等。
該等中,基於含矽膜之剝離性之觀點,較好為具有芳香環之矽烷化合物或具有酸酐基之矽烷化合物,更好為苯基三烷氧基矽烷、及(三乙氧基矽烷基)丙基丁二酸酐。
用以獲得〔A〕聚矽氧烷之矽烷化合物亦可視需要含有下列成分作為其他矽烷化合物:六甲氧基二矽烷、六乙氧基二矽烷、六苯氧基二矽烷、1,1,1,2,2-五甲氧基-2-甲基二矽烷、1,1,1,2,2-五苯氧基-2-苯基二矽烷、1,1,2,2-四甲氧基-1,2-二甲基二矽烷、1,1,2,2-四乙氧基-1,2-二甲基二矽烷、1,1,2,2-四苯氧基-1,2-二甲基二矽烷、1,1,2-三甲氧基-1,2,2-三甲基二矽烷、1,1,2-三乙氧基-1,2,2-三甲基二矽烷、1,1,2-三苯氧基-1,2,2-三甲基二矽烷、1,2-二甲氧基-1,1,2,2-四甲基二矽烷、1,2-二乙氧基-1,1,2,2-四甲基二矽烷、1,2-二苯氧基-1,1,2,2-四甲基二矽
烷等二矽烷類;
雙(三甲氧基矽烷基)甲烷、雙(三乙氧基矽烷基)甲烷、1-(二甲氧基甲基矽烷基)-1-(三甲氧基矽烷基)甲烷、1-(二乙氧基甲基矽烷基)-1-(三乙氧基矽烷基)甲烷、雙(二甲氧基甲基矽烷基)甲烷、雙(二乙氧基甲基矽烷基)甲烷、雙(二甲基甲氧基矽烷基)甲烷、雙(二甲基乙氧基矽烷基)甲烷、1-(二甲氧基甲基矽烷基)-2-(三甲基矽烷基)乙烷、1-(二乙氧基甲基矽烷基)-2-(三甲基矽烷基)乙烷等含雙矽烷基之矽烷類;
1,2-雙(三甲氧基矽烷基)苯、1,2-雙(三乙氧基矽烷基)苯、1,4-雙(三甲氧基矽烷基)苯、1,4-雙(三乙氧基矽烷基)苯等二矽烷類;
聚二甲氧基甲基碳矽烷、聚二乙氧基甲基碳矽烷等之聚碳矽烷等。該等矽烷化合物可單獨使用1種,亦可組合2種以上使用。
〔A〕聚矽氧烷在含矽膜形成組成物中可僅含1種,亦可含2種以上。
〔A〕聚矽氧烷之以凝膠滲透層析儀(GPC)測定之聚苯乙烯換算之重量平均分子量(Mw)之下限較好為1,000,更好為1,200,又更好為1,500。上述Mw之上限較好為20,000,更好為15,000,又更好為7,000。又,本說明書中之Mw為使用單分散聚苯乙烯作為標準物質藉由
凝膠滲透層析儀測定之值。具體之測定條件敘述於後。
使矽烷化合物(a)及視需要使用之其他矽烷化合物水解縮合之方法可使用習知之水解縮合方法。
〔A〕聚矽氧烷含量之下限相對於含矽膜形成組成物之總固體成分,較好為70質量%,更好為80質量%,又更好為90質量%。
上述含矽膜形成組成物含有〔B〕有機溶劑。〔B〕有機溶劑只要可使〔A〕聚矽氧烷及後述之任意成分溶解或分散者即無特別限制。
〔B〕有機溶劑列舉為例如醇系溶劑、酮系溶劑、醯胺系溶劑、醚系溶劑、酯系溶劑及其混合溶劑等。該等溶劑可單獨或併用2種以上。
上述醇系溶劑列舉為例如:4-甲基-2-戊醇、正己醇等碳數1~18之脂肪族單醇系溶劑;環己醇等碳數3~18之脂環式單醇系溶劑;1,2-丙二醇等碳數2~18之多元醇系溶劑;丙二醇單甲基醚等碳數3~19之多元醇部分酯系溶劑等。
上述醚系溶劑列舉為例如:
二乙基醚、二丙基醚、二丁基醚、二戊基醚、二異戊基醚、二己基醚、二庚基醚等二烷基醚系溶劑;四氫呋喃、四氫吡喃等環狀醚系溶劑;二苯基醚、苯甲醚等含芳香環之醚系溶劑等。
上述酮系溶劑列舉為例如:丙酮、甲基乙基酮、甲基正丙基酮、甲基正丁基酮、二乙基酮、甲基異丁基酮、2-庚酮、乙基正丁基酮、甲基正己基酮、二異丁基酮、三甲基壬酮等鏈狀酮系溶劑;環戊酮、環己酮、環庚酮、環辛酮、甲基環己酮等環狀酮系溶劑;2,4-戊二酮、乙醯基丙酮、苯乙酮等。
上述醯胺系溶劑列舉為例如:N,N’-二甲基咪唑啶酮、N-甲基吡咯啶酮等環狀醯胺系溶劑;N-甲基甲醯胺、N,N-二甲基甲醯胺、N,N-二乙基甲醯胺、乙醯胺、N-甲基乙醯胺、N,N-二甲基乙醯胺、N-甲基丙醯胺等鏈狀醯胺系溶劑等。
上述酯系溶劑列舉為例如:乙酸丁酯、乳酸乙酯、乙酸丁氧基甲酯等單羧酸酯系溶劑;丙二醇乙酸酯等多元醇羧酸酯系溶劑;丙二醇單甲基醚乙酸酯等多元醇部分醚羧酸酯系溶劑;草酸二乙酯等多元羧酸二酯系溶劑;
碳酸二甲酯、碳酸二乙酯等碳酸酯系溶劑等。
上述烴系溶劑列舉為例如:正戊烷、正己烷等碳數5~12之脂肪族烴系溶劑;甲苯、二甲苯等碳數6~16之芳香族烴系溶劑等。
該等〔B〕有機溶劑中,以丙二醇單甲基醚、丙二醇單乙基醚、或丙二醇單甲基醚乙酸酯較佳。
交聯促進劑為由上述含矽膜形成組成物形成含矽膜時等,可促進〔A〕聚矽氧烷之分子鏈間或分子鏈內之交聯反應之化合物。交聯促進劑只要具有上述性質即無特別限制,可使用過去習知者,列舉為例如酸、鹼、金屬錯合物、金屬鹽化合物、鎓鹽化合物等。交聯促進劑可單獨使用1種,亦可混合2種以上使用。
上述含矽膜形成組成物除上述成分以外,亦可進而含有酸產生劑、鹼產生劑、界面活性劑、β-二酮、膠體狀二氧化矽、膠體狀氧化鋁、有機聚合物等作為任意成分。
上述含矽膜形成組成物係混合例如〔A〕聚矽氧烷、〔B〕有機溶劑及視需要之任意成分,且溶解或分散於〔B〕有機溶劑中而得。上述含矽膜形成組成物之固體成分
濃度之下限較好為0.5質量%,更好為1質量%。上述含矽膜形成組成物之固體成分濃度之上限較好為20質量%,更好為15質量%,又更好為10質量%。
上述含矽膜對於純水之接觸角之下限較好為40°,最好為45°。上述接觸角之上限較好為80°,最好為75°。又,本說明書中只要無特別指明,則接觸角係指在25℃下之測定值。藉由將含矽膜之接觸角設為上述範圍,可使後述含矽膜去除步驟中之鹼性水溶液之潤濕擴展性良好或使通常於含矽膜上形成之阻劑圖型之密著性良好。
上述含矽膜較好由含有全部矽化合物中之60莫耳%以上之以下述式(1)表示之化合物的組成物之水解縮合物而形成。
【化2】SiX4 (1)
上述式(1)中,X為鹵原子或-OR2。R2為1價有機基。
亦即,上述含矽膜較好為由包含60莫耳%以上之4官能矽烷單體之化合物之水解縮合物形成。又,本說明書中,所謂4官能矽烷單體意指矽原子上具有4個以上水解性基者。水解性基列舉為烷氧基、芳氧基、鹵基等。同樣地,3官能矽烷單體以及2官能單體等亦依據此。
塗佈上述含矽膜形成組成物後,亦可視需要
以預烘烤(PB)使塗膜中之溶劑揮發。PB溫度係依據上述組成物之調配組成適當選擇。其下限較好為50℃。PB溫度之上限較好為450℃。PB時間之下限較好為5秒。PB時間之上限較好為600秒。
本步驟係以鹼性水溶液去除上述含矽膜。上述含矽膜去除步驟較好在未達100℃下進行。本步驟之含矽膜之去除可藉由例如將形成有含矽膜之基板浸漬於經加溫之鹼性水溶液中處理而進行。鹼性水溶液之溫度下限較好為30℃,更好為40℃,又更好為50℃。上述溫度之上限較好為100℃,更好為95℃,又更好為90℃。浸漬時間之下限較好為1秒,更好為10秒。浸漬時間之上限較好為1小時,更好為30分鐘。隨後,進行純水洗滌,去除所使用之鹼性水溶液。
上述鹼性水溶液列舉為例如含有由氨、有機胺及四烷基銨所組成之群選出之至少1種氮化合物之水溶液。具體列舉為氨、甲胺、二甲胺、三甲胺、乙胺、二乙胺、三乙胺、氫氧化四甲基銨、氫氧化四乙基銨等之氮化合物之水溶液等。上述鹼性水溶液較好均不含氟化氫及其鹽以及氟化合物之鹽。
此處,上述鹼性水溶液中之水含量之下限較好為40質量%,更好為60質量%,又更好為80質量%。
該等鹼性水溶液之濃度下限較好為0.1質量
%,更好為0.5質量%。上述濃度之上限較好為40質量%,更好為30質量%。
且,上述鹼性水溶液藉由進而含有過氧化氫,可進一步提高含矽膜之去除性故而較佳。至於過氧化氫之含有比例,鹼性水溶液中之過氧化氫相對於氮化合物之質量比之下限較好為1/500,上述質量比之上限較好為500。
上述鹼性水溶液較好為藉由氨、過氧化氫及水之混合而得之液體。該液體只要是藉由氨、過氧化氫及水之混合而得者即可,亦包含因氨與過氧化氫之反應等而未能檢出氨及/或過氧化氫者。亦即,藉由氨、過氧化氫及水之混合而得之液體較好為包含氨及過氧化氫或氨與過氧化氫之反應產物以及水之液體,其具體例列舉為:包含氨、過氧化氫及水之液體;包含氨與過氧化氫之反應產物、氨及水之液體;包含氨與過氧化氫之反應產物、過氧化氫及水之液體;包含氨與過氧化氫之反應產物及水之液體等。該等中,藉由氨、過氧化氫及水之混合而得之液體較好為包含氨、過氧化氫及水之液體。
本步驟藉由在後述之[阻劑圖型形成步驟]之後進行,可使未適當圖型化之阻劑膜在含矽膜藉去除時與含矽膜一起剝離,而使再度形成含矽膜與阻劑膜等之再加工成為可能。此外,本步驟亦可藉後述之[蝕刻步驟]於含矽
膜上形成圖型後進行。藉此,由於可藉由上述含矽膜去除步驟而剝離未適當圖型化之含矽膜等,故使再度形成含矽膜與阻劑膜等之再加工成為可能。再者,本步驟亦可藉後述之[蝕刻步驟],在阻劑下層膜上形成圖型後進行,亦可在於基板上形成圖型後進行。
本步驟係在〔含矽膜形成步驟〕中形成之含矽膜上形成阻劑圖型。本步驟中,形成阻劑圖型之方法為可藉由例如使用阻劑組成物之方法、使用壓印微影法之方法等過去習知之方法形成。
本步驟係以上述阻劑圖型作為遮罩而蝕刻上述含矽膜,而於含矽膜上形成圖型。依據該圖型形成方法,即使蝕刻後,仍可藉由上述之含矽膜去除步驟剝離未適當圖型化之阻劑膜及含矽膜,故可再度形成含矽膜與阻劑膜而形成圖型。
本步驟中,亦可具有進一步蝕刻阻劑下層膜,於阻劑下層膜上形成圖型之步驟。隨後,在上述含矽膜去除步驟中由於含矽膜被去除,故可獲得具有經圖型化之阻劑下層膜之基板,使用此可於基板上形成圖型。
本步驟亦可具有進一步蝕刻基板之步驟。
上述蝕刻較好使用1次或複數次之乾蝕刻。
乾蝕刻可使用習知之乾蝕刻裝置進行。另外,乾蝕刻時之氣體源係依據被蝕刻物之元素組成而定,可使用O2、CO、CO2等含氧原子之氣體、He、N2、Ar等惰性氣體、Cl2、BCl3等氯系氣體,CHF3、CF4等氟系氣體、H2、NH3之氣體等。又,該等氣體亦可混合使用。
以下基於實施例具體說明本發明,但本發明並不受限於該等實施例。各種物性值之測定方法示於下。
〔A〕化合物之構造係分別以MALDI-TOF-MS(島津製作所公司之「SHIMAZU/KRATOS Matrix支援雷射離子化飛行時間質量分析裝置KOMPACT MALDI IV tDE」測定分子量,以FT-IR(日本分光公司之「420型」測定紅外線吸收光譜(IR),以核磁共振裝置(日本電子公司之「JNM-ECA-500型」)(測定溶劑:DMSO-d6)測定1H-NMR光譜加以確認。
重量平均分子量(Mw)係以單分散聚苯乙烯作為標準以凝膠滲透層析儀測定。使用TOSOH公司之「G2000HXL」:2根及「G3000HXL」:1根作為GPC管柱,使用示差折射計作為檢測器,使用四氫呋喃作為溶離
液。流量1.0毫升/分鐘、管柱溫度設為40℃。
於1,000mL之三頸梨型燒瓶中添加丙烯酸丁酯13.28g與甲基異丁基酮(MIBK)75g。另外設置滴加槽,於其中使2-乙烯基萘54.22g、乙烯基苄基醇32.50g、及自由基聚合起始劑(合光純藥工業公司之「V-601」)11.91g溶解於MIBK 75g中。在釜溫度80℃下於3小時內滴加,隨後熟成3小時後,使燒瓶釜冷卻至溶液溫度成為室溫為止。隨後,將溶液滴加於5倍質量之庚烷中,經過濾後獲得白色粉體之化合物(A-1)50.5g。
於1,000mL之三頸梨型燒瓶中饋入間苯二酚35g、乙醛39g及乙醇450g,在氮氣氛圍下於室溫溶解。所得溶液在溶液溫度40℃下於1小時內滴加濃鹽酸95.6g,使溶液溫度成為80℃熟成11小時。熟成後,使燒瓶釜冷卻至溶液溫度成為室溫為止。隨後,過濾去除乙醇溶液而回收所析出之紅褐色固體成分。使用甲醇/水混合溶液(各300g)進行沖流洗淨,在60℃減壓乾燥隔夜,獲得末端基為羥基之褐色固體成分45.6g。以1H-NMR確認獲得目的之前驅物Y。
接著,使用500mL之圓底燒瓶,在氮氣氛圍
下,於N,N-二甲基乙醯胺200mL中邊以磁石攪拌機攪拌上述所得之前驅物Y 10.0g邊溶解。在攪拌下將20.0g之氯甲基苯乙烯添加於所得溶液中,再添加碳酸鉀28.4g,在80℃進行反應18小時。反應結束後,將該反應溶液添加於已添加乙酸14mL之水2L中。去除上澄液,使殘留之高黏性物溶解於最少量之丙酮中,投入500mL之水中進行再沉澱。所得高黏性物在65℃下減壓乾燥隔夜,獲得黃土色之固體的聚合物(A-2)10.5g。
混合10質量%之草酸23.87g與水14.34g,調製草酸水溶液。隨後,將冷卻管及加入有上述調製之草酸水溶液之滴加漏斗安裝於已加入四乙氧基矽烷55.24g、苯基三甲氧基矽烷7.01g、3-(三乙氧基矽烷基)丙基琥珀酸酐16.14g及甲醇33.39g之燒瓶上。接著,以油浴加熱至60℃後,緩慢滴加草酸水溶液,在60℃反應4小時。反應結束後,將饋入反應溶液之燒瓶放冷後,以丙二醇單甲基醚乙酸酯置換,安裝於蒸發器上,去除甲醇獲得樹脂溶液473g。將該樹脂溶液中之固體成分稱為聚矽氧烷(A-3)。所得樹脂溶液中之固體成分之含有比例以燒成法測定之結果為7.5質量%。且,聚矽氧烷(A-3)之Mw為2,000。
混合10質量%之草酸31.10g與水9.35g,調製草酸水溶液。隨後,將冷卻管及加入有上述調製之草酸水溶液之滴加漏斗裝設於已加入四乙氧基矽烷64.07g、甲基三甲氧基矽烷12.89g、苯基三甲氧基矽烷14.07g及甲醇68.53g之燒瓶上。接著,以油浴加熱至60℃後,緩慢滴加草酸水溶液,在60℃反應4小時。反應結束後,將饋入反應溶液之燒瓶放冷後,以丙二醇單甲基醚乙酸酯置換,安裝於蒸發器上,去除甲醇獲得樹脂溶液262g。將該樹脂溶液中之固體成分稱為聚矽氧烷(A-4)。所得樹脂溶液中之固體成分之含有比例以燒成法測定之結果為7.5質量%。且,聚矽氧烷(A-4)之Mw為1,800。
將甲醇200g、離子交換水200g及35質量%之鹽酸1g饋入1,000mL玻璃燒瓶中,在室溫下添加四乙氧基矽烷50g、甲基三甲氧基矽烷100g及苯基三甲氧基矽烷10g之混合物。直接在室溫水解縮合8小時後,添加丙二醇單乙基醚300mL,經減壓濃縮獲得樹脂溶液300g(聚合物濃度21質量%)。將該樹脂溶液中之固體成分稱為聚矽氧烷(A-5)。且,聚矽氧烷(A-5)之Mw為2,000。
將甲醇200g、離子交換水200g及35質量%之鹽酸1g饋入1,000mL玻璃燒瓶中,在室溫下添加甲基三甲氧
基矽烷100g及苯基三甲氧基矽烷20g之混合物。直接在室溫下水解縮合8小時後,添加丙二醇單乙基醚300mL,經減壓濃縮獲得樹脂溶液300g(聚合物濃度19質量%)。將該樹脂溶液中之固體成分稱為聚矽氧烷(A-6)。且,聚矽氧烷(A-6)之Mw為3,000。
在室溫下添加離子交換水260g、65質量%硝酸5g、四甲氧基矽烷70g、甲基三甲氧基矽烷70g及苯基三甲氧基矽烷10g之混合物。直接在室溫下水解縮合8小時後,添加丁二醇單甲基醚300mL,經減壓濃縮獲得樹脂溶液300g(聚合物濃度20質量%)。將該樹脂溶液中之固體成分稱為聚矽氧烷(A-7)。且,聚矽氧烷(A-7)之Mw為2,500。
阻劑下層膜形成用組成物或含矽膜形成用組成物之調製所用之各成分示於下。
B-1:丙二醇單甲基醚乙酸酯
B-2:丙二醇單乙基醚
B-3:丁二醇單甲基醚
D-1:雙(4-第三丁基苯基)錪九氟正丁烷磺酸鹽(以下述式(D-1)表示之化合物)
E-1:1,3,4,6-肆(甲氧基甲基)甘醇脲(以下述式(E-1)表示之化合物)
將合成例1所得之(A-1)5質量份溶解於丙二醇單甲基醚乙酸酯(有機溶劑(B-1))95質量份中獲得混合溶液。隨後,以孔徑0.1μm之薄膜過濾器過濾該混合溶
液,調製阻劑下層膜形成用組成物(U-1)。
除了使用下述表1所記載之種類及含量之成分以外,餘與合成例8同樣調製阻劑下層膜形成用組成物(U-2)。又,表1中之「-」表示未使用該成分。
將合成例3所得之(A-3)2質量份溶解於丙二醇單乙基醚(有機溶劑(B-2))98質量份中獲得混合溶液。隨後,以孔徑0.1μm之薄膜過濾器過濾該混合溶液,調製含矽膜形成用組成物(U-3)。
除了使用下述表1所記載之種類及含量之成分以外,餘與合成例10同樣調製含矽膜形成用組成物(U-4)~(U-7)。又,表1中之「-」表示未使用該成分。
以旋轉塗佈法將上述調製之各阻劑下層膜形成用組成物及各含矽膜形成用組成物塗佈於矽晶圓(基板)上。隨後,在大氣氛圍下,以表2所記載之烘烤條件分別獲得各「附阻劑下層膜及含矽膜之基板」。
使用上述獲得之各基板,針對下述項目,以下述方法進行評價。評價結果示於表3。
在25℃下測定上述獲得之各基板之含矽膜對於純水之接觸角。
將上述所得之各基板浸漬於環己酮(室溫)中10秒。使用分光橢圓分光儀(KLA-TENCOR公司之「UV1280E」)測定浸漬前後之膜之平均厚度,由測定值算出膜厚變化率。膜厚變化率係以下述式(a)求出。
膜厚變化率(a)=100×(浸漬後之膜之平均厚度與浸漬前之膜之平均厚度之差之絕對值)/(浸漬前之膜之平均厚度) (a)
耐溶劑性在膜厚變化率未達1%時評價為「A」(良好),1%以上時評價為「B」(不良)。
將上述所得之各基板浸漬於2.38質量%之TMAH顯像液(室溫)中60秒。使用分光橢圓分光儀(KLA-TENCOR公司之「UV1280E」)測定浸漬前後之膜之平均
厚度,由測定值算出膜厚變化率。膜厚變化率係以上述式(a)求出。溶劑耐性於膜厚變化率未達1%時評價為「A」(良好),1%以上時評價為「B」(不良)。
將上述所得之各基板浸漬於加溫至80℃之2.38質量%TMAH顯像液中5分鐘。以剖面SEM觀察浸漬前後之基板,僅下層殘留時評價為「A」(良好),殘留含矽膜時評價為「B」(不良)。
將上述所得之各基板浸漬於加溫至65℃之鹼性剝離液A(25質量%氨水溶液/30質量%之過氧化氫水溶液/水=1/1/5(體積比)混合水溶液)中5分鐘。以剖面SEM觀察浸漬前後之基板,僅下層殘留時評價為「A」(良好),殘留含矽膜時評價為「B」(不良)。
如表3之結果所示般,依據本發明之圖型形成方法,不使用對基板造成較大損傷之酸性剝離液或氟化合物,亦可藉由TMAH顯像液、以氨水溶液作為成分之鹼性水溶液,而去除含矽膜。
依據本發明之圖型形成方法,可不使用對基板造成較大損傷之酸性剝離液或氟化合物,且不管蝕刻前後,均可去除含矽膜。藉此,可再度形成含矽膜而進行再加工。據此,該圖型形成方法可應用於今後預測將進行更微細化之半導體裝置之製造。
Claims (9)
- 一種圖型形成方法,其具有下列步驟:於基板之一面側形成阻劑下層膜之步驟、於上述阻劑下層膜之與上述基板相反面側形成含矽膜之步驟、及以鹼性水溶液去除上述含矽膜之步驟,在上述含矽膜形成步驟之後且上述含矽膜去除步驟前,不具有以含有酸或氟化合物之處理液處理上述含矽膜之步驟。
- 如請求項1之圖型形成方法,其中上述含矽膜係由含有全部矽化合物中60莫耳%以上之以下述式(1)表示之化合物之組成物之水解縮合物所形成,【化1】SiX4 (1)(式(1)中,X為鹵原子或-OR2,R2為1價有機基)。
- 如請求項1之圖型形成方法,其中上述鹼性水溶液為含氫氧化四烷基銨及水之液體,或藉由混合氨、過氧化氫及水而得之液體。
- 如請求項1之圖型形成方法,其中上述鹼性水溶液不含有氟化氫及其鹽以及氟化合物之鹽之任一者。
- 如請求項1之圖型形成方法,其中上述含矽膜去除步驟係在未達100℃下進行。
- 如請求項1之圖型形成方法,其中在上述含矽膜 形成步驟後且上述含矽膜去除步驟前進而具有下列步驟:於上述含矽膜之與上述基板相反之面上形成阻劑圖型之步驟、及以上述阻劑圖型作為遮罩而蝕刻上述含矽膜之步驟。
- 如請求項1之圖型形成方法,其中上述含矽膜係由含有含以下述式(2)表示之化合物之矽烷化合物之水解縮合物及有機溶劑之組成物所形成:【化2】R1 aSiX4-a (2)(式(2)中,R1為氫原子、氟原子、碳數1~5之烷基、氰基、氰烷基、烷基羰氧基、酸酐基、烯基、芳基或芳烷基,該烷基亦可經氟原子取代,上述芳基及芳烷基亦可經取代,X為鹵原子或-OR2,R2為1價有機基,a為0~3之整數,R1及X分別為複數個時,複數個R1可相同亦可不同,複數個X可相同亦可不同)。
- 如請求項7之圖型形成方法,其中上述矽烷化合物具有芳香環。
- 如請求項7之圖型形成方法,其中上述矽烷化合物具有酸酐基。
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JP5612531B2 (ja) * | 2010-04-30 | 2014-10-22 | 富士フイルム株式会社 | 平版印刷版用支持体、および平版印刷版原版 |
JP5910500B2 (ja) * | 2010-09-29 | 2016-04-27 | Jsr株式会社 | パターン形成方法 |
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JP5874722B2 (ja) * | 2011-02-28 | 2016-03-02 | Jsr株式会社 | パターン形成方法 |
JP6065497B2 (ja) * | 2011-09-29 | 2017-01-25 | Jsr株式会社 | パターン形成方法及びポリシロキサン組成物 |
KR102086405B1 (ko) * | 2012-03-07 | 2020-03-09 | 제이에스알 가부시끼가이샤 | 레지스트 하층막 형성용 조성물 및 패턴 형성 방법 |
JP6094587B2 (ja) * | 2012-09-10 | 2017-03-22 | Jsr株式会社 | レジスト下層膜形成用組成物及びパターン形成方法 |
US9348228B2 (en) * | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
JP6119668B2 (ja) * | 2013-06-11 | 2017-04-26 | 信越化学工業株式会社 | 下層膜材料及びパターン形成方法 |
JP6215777B2 (ja) * | 2013-06-27 | 2017-10-18 | 信越化学工業株式会社 | 塗布型bpsg膜形成用組成物、該組成物で膜を形成した基板、及び前記組成物を用いたパターン形成方法 |
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2015
- 2015-03-04 WO PCT/JP2015/056437 patent/WO2015146524A1/ja active Application Filing
- 2015-03-04 KR KR1020167025936A patent/KR102388290B1/ko active IP Right Grant
- 2015-03-04 JP JP2016510193A patent/JP6477687B2/ja active Active
- 2015-03-23 TW TW104109181A patent/TWI654489B/zh active
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Publication number | Publication date |
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WO2015146524A1 (ja) | 2015-10-01 |
KR20160135216A (ko) | 2016-11-25 |
US20170003592A1 (en) | 2017-01-05 |
US10234762B2 (en) | 2019-03-19 |
TWI654489B (zh) | 2019-03-21 |
KR102388290B1 (ko) | 2022-04-20 |
JPWO2015146524A1 (ja) | 2017-04-13 |
JP6477687B2 (ja) | 2019-03-06 |
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