TW201609558A - 焊料包覆球及其製造方法 - Google Patents

焊料包覆球及其製造方法 Download PDF

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Publication number
TW201609558A
TW201609558A TW104124954A TW104124954A TW201609558A TW 201609558 A TW201609558 A TW 201609558A TW 104124954 A TW104124954 A TW 104124954A TW 104124954 A TW104124954 A TW 104124954A TW 201609558 A TW201609558 A TW 201609558A
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Taiwan
Prior art keywords
solder
core
nip
layer
coated ball
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TW104124954A
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English (en)
Inventor
野坂勉
森英人
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日立金屬股份有限公司
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Publication of TW201609558A publication Critical patent/TW201609558A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/06—Metallic powder characterised by the shape of the particles
    • B22F1/065—Spherical particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/12—Metallic powder containing non-metallic particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/17—Metallic particles coated with metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3033—Ni as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1635—Composition of the substrate
    • C23C18/1637—Composition of the substrate metallic substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
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    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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    • C25D5/38—Pretreatment of metallic surfaces to be electroplated of refractory metals or nickel
    • C25D5/40—Nickel; Chromium
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B22F2998/10—Processes characterised by the sequence of their steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
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Abstract

本發明的焊料包覆球(10A)係具備有：含Ni及P的球狀核(11)、及依包覆核(11)之方式形成的焊料層(12)。焊料包覆球(10B)係更進一步具備有在核(11)與焊料層(12)之間形成的鍍Cu層(13)。焊料包覆球(10C)係更進一步具備有在鍍Cu層(13)與焊料層(12)之間形成的鍍Ni層(14)。

Description

焊料包覆球及其製造方法
本發明係關於適合使用作為例如半導體封裝之輸出入端子的焊料包覆球及其製造方法。
焊料包覆球主要係用於連接電氣‧電子機器的零件而使用。具體而言，焊料包覆球係使用於例如：零件周圍具導線端子的QFP(Quad Flat Package，四面扁平封裝)、或較小型且可多針腳化的BGA(Ball Grid Array，球柵陣列封裝)及CSP(Chip Size Package，晶片尺寸封裝)等半導體封裝之輸出入端子。近年，由於半導體封裝的小型化‧高密度化，因而要求焊料包覆球之粒徑在150μm以下。
截至目前為止，焊料包覆球因粒徑及真球度的變動較小，便使用以Cu(銅)為核(Core)的焊料包覆球(亦稱「Cu核焊料包覆球」)。然而，粒徑在150μm以下、且接近真球形狀的Cu核(亦稱「Cu球」)之量產不容易，而檢討各種製造方法。
例如專利文獻1記載有：將直徑15~30μm的Cu細線施行沖壓切斷而形成圓柱形狀碎片，再於電漿環境中將該碎片施行球狀化(稱「電漿球狀化處理」)，便可製造粒徑(精度、良率)40μm(±5μm、約98%)的Cu球。
[先前技術文獻] [專利文獻]
專利文獻1：日本專利特開2005-036301號公報
然而，專利文獻1所記載的Cu球之製造方法，仍難謂能獲得充分的量產性，且製造成本亦高。專利文獻1的製造方法，為能高精度切斷Cu細線形成微細Cu碎片便必需準備沖壓裝置及電漿球狀化裝置，且為能除去Cu碎片表面氧化層或抑制表面氧化、以及使該等裝置能安定運轉，便需要耗費較多的成本及時間。
本發明係為解決上述問題而完成，其目的在於提供：量產性優異且微小的焊料包覆球及其製造方法。
本發明實施形態的焊料包覆球係具備有：含Ni及P的球狀核、及依包覆上述核之方式形成的焊料層。
該實施形態中，上述焊料包覆球係更進一步具備有在上述核與上述焊料層之間形成的鍍Cu層。
該實施形態中，上述焊料包覆球係更進一步具備有在上述鍍Cu層與上述焊料層之間形成的鍍Ni層。
該實施形態中，上述鍍Cu層的厚度係0.01μm以上且50μm以下。
該實施形態中，上述焊料包覆球係更進一步具備有在上述核與上述焊料層之間形成的鍍Ni層。
該實施形態中，上述焊料層的厚度係0.01μm以上且 50μm以下。
該實施形態中，上述核的平均粒徑係150μm以下，真球度係0.98以上。真球度較佳係0.99以上。上述核的平均粒徑係1μm以上。
該實施形態中，上述核係含有：1質量%以上且15質量%以下的P、上限為18質量%之任意添加的Cu、以及除上述Cu之外上限為10質量%之任意添加的Sn，其餘係Ni與不可避免的雜質。即，上述核較佳係從含有Ni及P者、含有Ni、P及Cu者、及含有Ni、P、Cu及Sn者之中視需要選擇。
本發明實施形態的焊料包覆球之製造方法，係上述任一項所記載之焊料包覆球的製造方法，其包括有：準備上述核的步驟、以及利用無電解還原法製造下述粉體的步驟；該粉體係由含Ni及P的球狀粒子所構成的粉體，當將利用雷射繞射散射法獲得的積算體積分佈曲線中表示90體積%、10體積%及50體積%的粒徑分別設為d90、d10及d50時，滿足[(d90-d10)/d50]≦0.8。上述由含Ni及P的球狀粒子所構成的粉體較佳係滿足[(d90-d10)/d50]<0.7。
該實施形態中，上述製造方法係更進一步包括有：利用電解電鍍形成包覆上述核的焊料層之步驟。
根據本發明的實施形態，可提供具有核，且全表面由焊料包覆，例如平均粒徑150μm以下、且真球度0.98以上的球狀，且量產性優異的焊料包覆球。又，根據本發明的實施形態，可提供能依高量產性製造此種焊料包覆球的製造方法。
10A、10B、10C‧‧‧焊料包覆球
11‧‧‧核(NiP核)
12‧‧‧焊料層(焊料電鍍層)
13‧‧‧鍍Cu層
14‧‧‧鍍Ni層
圖1(a)、(b)及(c)係本發明實施形態的焊料包覆球10A、10B及10C之示意剖視圖。
圖2中，(a)係實驗例1的NiP粉體之SEM影像，(b)係實驗例2的NiP粉體之SEM影像，(c)係實驗例3的NiP粉體之SEM影像，(d)係實驗例4的NiP粉體之SEM影像。
圖3中，(a)係實驗例5在NiP粒子上形成鍍Cu層後且形成焊料層前的粒子截面之SEM影像圖，(b)係實驗例6的焊料電鍍NiP粒子(焊料包覆球)截面之SEM影像圖。
以下參照圖式，針對本發明實施形態的焊料包覆球及其製造方法進行說明。
圖1(a)、(b)及(c)係表示本發明實施形態的焊料包覆球10A、10B及10C的示意剖視圖。
圖1(a)所示焊料包覆球10A係具備有：含Ni(鎳)及P(磷)的球狀(ball)核11、與依包覆核11之方式形成的焊料層12。圖1(b)所示焊料包覆球10B係就更進一步具備有在核11與焊料層12之間形成的鍍Cu(銅)層13之方面，不同於焊料包覆球10A。圖1(c)所示焊料包覆球10C係就更進一步具備有在鍍Cu層13與焊料層12之間形成的鍍Ni層14之方面，不同於焊料包覆球10B。另外，圖1(c)所示焊料包覆球10C中，亦可省略鍍Cu層13，而在核11表面上直接形成鍍Ni層14。又，圖1(c)所示焊料包覆球10C，亦可在核11表面上直接形成鍍Ni層，並進一步在該鍍Ni層上形 成鍍Cu層13及鍍Ni層14，亦可省略鍍Ni層14。
包覆球10A、10B及10C所具有的核11係含有Ni及P的球狀(球狀)核。該核11可適當使用本案申請人所提出申請的日本專利特開2009-197317號公報(日本專利第5327582號)所記載的NiP粒子。為求參考，日本專利特開2009-197317號公報所揭示的全部內容均爰引於本說明書中。以下，將核11稱為NiP核11。
NiP核11係以Ni作為主成分，除P(磷)之外，亦可進一步含有Cu(銅)。又，當NiP核11含有Cu的情況，亦可更進一步含有Sn(錫)。
例如NiP核11係含有：1質量%以上且15質量%以下的P、上限為18質量%之任意添加的Cu、以及除上述Cu之外更進一步任意添加上限為5質量%的Sn，其餘係Ni與不可避免的雜質。NiP核11中所含不可避免的雜質，係源自NiP核11製造時所使用的溶液成分，主要為C(碳)及O(氧)。C及O的含有率較佳係將C抑制至0.1質量%以下、及將O抑制至0.8質量%以下，俾可抑制NiP核11的體積電阻率上升，並抑制當在NiP核11表面上形成焊料層12或鍍Cu層13時發生的密接性降低。此處，各元素的質量%係表示相對於NiP核11全體的含有率。
P、Cu及Sn的含有率會對NiP粒子的硬度、體積電阻率(導電率)、粒徑及粒度分佈造成影響。若各元素的含有率提高，則體積電阻率會上升，因而各元素的上限值主要係由所要求的體積電阻率決定。又，若各元素的含有率過高，則會有較難形成粒子達0.98以上真球度、或依情況而粒子無法球狀化的情形。各元素的下限值係依照為能獲得目標粒度及/或粒度分佈的必要量決定。
更詳言之，P(1質量%以上且15質量%以下)係賦予作為導電粒子(核)時的必要硬度與導電性。又，藉由添加P，便可獲得中心部分具有結晶質、且表層部分具有分散著非晶質介金屬化合物之構造的NiP粒子。藉由添加Cu(0.01質量%以上且18質量%以下)，便可獲得提升單分散性的效果。除Cu之外，藉由添加Sn(0.05質量%以上且5質量%以下)，便可獲得更進一步提升單分散性的效果。
NiP粒子係例如將Ni鹽水溶液、與含P的還原劑水溶液予以混合，而使生成微粒子的核之後，再利用無電解使該核還原析出Ni與P而獲得。根據該製造方法(稱「無電解還原法」)，便可安定且效率佳、低成本量產具有既定粒徑的NiP粒子。例如若將利用雷射繞射散射法獲得的積算體積分佈曲線中表示90體積%、10體積%及50體積%的粒徑分別設為d90、d10及d50時，能獲得具有滿足[(d90-d10)/d50]≦0.8之粒度分佈的NiP粉體(NiP粒子的集合體)。上述製造方法中，將Ni鹽水溶液、與含P的還原劑水溶液進行混合時，藉由在Ni鹽水溶液中添加Cu離子，便可獲得具有Ni-Cu-P組成的NiP粒子，藉由添加Cu離子與Sn離子，便可獲得具有Ni-Cu-Sn-P組成的NiP粒子。
若依照上述製造方法，可獲得由平均粒徑在150μm以下、且真球度達0.98以上的NiP粒子所構成的NiP粉體。依照上述製造方法所製得NiP粉體的平均粒徑下限值係約1μm。
在上述NiP粉體上利用電解電鍍形成焊料層12。焊料層12的厚度係例如0.01μm以上且50μm以下。藉由調節焊料層12的厚度，便可控制最終所獲得焊料包覆球10A的直徑。焊料層 12的材料係可廣泛使用公知焊料。例如可適當使用Sn-3Ag-0.5Cu等無鉛焊料。
鍍Cu層13及鍍Ni層14係利用無電解電鍍或電解電鍍形成。鍍Cu層13的厚度係例如0.01μm以上且50μm以下。鍍Ni層14的厚度係例如0.01μm以上且50μm以下，可期待抑制因焊料層12中所含Sn、與鍍Cu層13中所含Cu，導致生成脆弱介金屬化合物的效果。鍍Cu層13及/或鍍Ni層14的厚度亦係與焊料層12的厚度同樣，為控制最終所獲得焊料包覆球10B或10C的直徑，可進行調整。
焊料包覆球10B及10C係具有依包覆NiP核11之方式形成的鍍Cu層13。形成焊料層12及鍍Ni層14前的狀態，在表觀上係與Cu核相同，且與焊料層間之濕潤性亦可與Cu核相同。又，藉由充分增加鍍Cu層13的厚度，亦可使硬度呈現與Cu核同等狀態。另外，鍍Ni層14如眾所周知，具有提升與焊料層12間之密接性的效果。
以下，例示實驗例。以下說明中，平均粒徑係指將由NiP粒子所構成的NiP粉體使用作為試料，並利用雷射繞射散射法獲得的積算體積分佈曲線中，表示50體積%的粒徑(d50)。又，真球度係從平行穿透光進行的影像測定系統中，求取投影影像的最長徑與圓相當徑，再將圓相當徑除以最長徑的值。NiP粒子的組成係利用感應耦合電漿(ICP)發光分光分析裝置(島津製作所製ICPE-9000)測定。
(實驗例1)
將硫酸鎳六水合物、硫酸銅五水合物及錫酸鈉三水合物，依Ni與Cu的莫耳比成為Ni/Cu=29、Ni與Sn的莫耳比成為Ni/Sn=5.8方式進行調配，再將其溶解於純水中，而製備得金屬鹽水溶液15(dm3)。
其次，將醋酸鈉溶解於純水中使濃度成為3.0(kmol/m3)，進一步添加氫氧化鈉，而製備得pH調製水溶液15(dm3)。
將上述金屬鹽水溶液與pH調製水溶液攪拌混合，獲得30(dm3)的混合水溶液。該混合溶液的pH係7.20。
將上述混合水溶液一邊利用N2氣體發泡，一邊利用外部加熱器施行加熱保持於343(K)並持續攪拌。
其次，在純水中依濃度1.8(kmol/m3)溶解次膦酸鈉而製備得還原劑水溶液15(dm3)，亦將其利用外部加熱器加熱至343(K)。
在上述混合水溶液30(dm3)與還原劑水溶液15(dm3)的溫度成為343±1(K)狀態下，將該等進行混合，並利用無電解還原法獲得NiP粉體。
所獲得NiP粉體的平均粒徑d50係56.1μm，[(d90-d10)/d50]值係0.55。又，真球度係0.995。圖2(a)係表示NiP粉體的SEM影像。由圖2(a)中得知，能獲得各個NiP粒子接近真球、且單分散性高的NiP粉體。
NiP粒子的組成係P含有率為5.3質量%、Cu含有率為4.310質量%、Sn為0.159質量%，其餘係Ni及不可避免的雜質。
將該等結果示於表1。表1中合併表示下述實驗例2~6 的結果。
(實驗例2)
除調整氫氧化鈉量，使混合水溶液的pH成為7.16之外，其餘均依照與實驗例1相同的條件，利用無電解還原法製作NiP粒子。將所獲得NiP粉體的SEM影像示於圖2(b)。由圖2(b)中得知，能獲得各個NiP粒子接近真球、且單分散性高的NiP粉體。平均粒徑d50係90.2μm，[(d90-d10)/d50]值係0.66。
(實驗例3)
除使用硫酸鎳六水合物、硫酸銅五水合物及錫酸鈉三水合物，依Ni與Cu的莫耳比成為Ni/Cu=21.75、Ni與Sn的莫耳比成為Ni/Sn=5.8的方式進行製備之外，其餘均與實驗例1同樣地利用無電解還原法製作微小粒子。另外，混合水溶液的pH係7.12。
將所獲得NiP粉體的SEM影像示於圖2(c)。由圖2(c)中得知，能獲得各個NiP粒子接近真球、且單分散性高的NiP粉體。平均粒徑d50係149.1μm，[(d90-d10)/d50]係0.46。
(實驗例4)
將硫酸鎳六水合物與硫酸銅五水合物依Ni與Cu的莫耳比成為Ni/Cu=39的方式進行調製，並溶解於純水中，而製備得金屬鹽水溶液15(dm3)。
製備含有：0.65(kmol/m3)醋酸鈉及0.175(kmol/m3)順丁烯二酸二鈉的pH調製水溶液15(dm3)。
將上述金屬鹽水溶液與pH調製水溶液進行攪拌混合，獲得30(dm3)混合水溶液。混合水溶液的pH係8.2。
將上述混合水溶液一邊利用N2氣體發泡，一邊利用外部加熱器施行加熱保持於343(K)並持續攪拌。
然後，再與實驗例1同樣地利用無電解還原法製作NiP粉體。
將所獲得NiP粉體的SEM影像示於圖2(d)。由圖2(d)中得知，能獲得各個NiP粒子接近真球、且單分散性高的NiP粉體。平均粒徑d50係67.1μm，[(d90-d10)/d50]值係0.51。另外，該NiP粉體並未含有Sn，組成分析的結果，Sn含有率係未滿檢測極限。
(實驗例5)
在實驗例1所獲得Ni-P粒子的表面上，將目標厚度設為約0.5μm，利用下述無電解鍍Cu法形成鍍Cu層。
將NiP粉末在約70℃的氧化膜除去液(奧野製藥工業(股)製、TOP UBP NACTI)中浸漬3分鐘，在此期間利用手振動容器。藉由該活性化處理，便將NiP粒子表面上所形成的自然氧化膜除去。然後，將利用吸引過濾所取出的NiP粉末浸漬於純水中，施行超音波洗淨3分鐘。
其次，將NiP粉末在30℃觸媒賦予液(奧野製藥工業(股)製、ICP ACCERA KCR)中浸漬3分鐘，藉此使NiP粒子表面上生成Pd核。Pd核係成為使析出無電解鍍Cu層的起點。
將所獲得的NiP粉末與上述同樣地施行超音波洗淨後，投入於無電解鍍Cu液(奧野製藥工業(股)製、OPC COPPER AF) 中。在60℃無電解鍍Cu液中，於一邊施行空氣發泡、一邊使用攪拌葉片依200次/min的速度進行攪拌的狀態下投入NiP粉末。在此狀態下，施行4小時的無電解鍍Cu。取出已形成鍍Cu層的NiP粉末，經施行超音波洗淨後，再依60℃施行乾燥。
將所獲得鍍Cu NiP粒子的截面SEM影像示於圖3(a)。該鍍Cu NiP粉體的平均粒徑d50係57.5μm，[(d90-d10)/d50]值係0.56。又，鍍Cu NiP粒子的真球度係0.995，其與實驗例1的NiP粒子真球度並沒有變化，確認到並沒有因鍍Cu而導致真球度降低的情況，即依均勻厚度(0.7μm)形成鍍Cu層。由圖3(a)的SEM影像中亦得知形成厚度均勻的鍍Cu層。
然後，藉由依包覆上述鍍Cu層的方式形成焊料層，便可獲得在NiP核與焊料層之間具有鍍Cu層之構成的焊料包覆球。焊料層係依照實驗例6所說明的電解焊料電鍍法形成。
(實驗例6)
在實驗例1所獲得Ni-P粒子的表面上，將目標厚度設為約10μm，利用下述電解焊料電鍍法形成具有Sn-3.0Ag-0.5Cu組成的焊料層。
將NiP粉末在10%鹽酸水溶液中浸漬3分鐘，在此期間利用手振動容器。藉由該活性化處理，便將NiP粒子表面上所形成的自然氧化膜除去。然後，將利用吸引過濾所取出的NiP粉末浸漬於純水中，施行超音波洗淨3分鐘。
其次，在含有：甲磺酸錫(依Sn計為18g/L)、甲磺酸Ag(依Ag計為1.0g/L)、及甲磺酸Cu(依Cu計為2.2g/L)的溶液中添 加氨，而準備經調整為pH4.0的焊料電鍍液。
使用該焊料電鍍液，將Sn設為陽極電極，依電流密度0.4A/dm2、常溫(25℃)，利用高速旋轉電鍍裝置(例如參照國際公開第2013/141166號)施行電解電鍍，藉此在NiP粒子表面上形成具有Sn-3.0Ag-0.5Cu組成(數字係相當於質量%)的焊料層約10μm。取出已形成焊料層的NiP粉末，經施行超音波洗淨後，依50℃施行乾燥。
圖3(b)係表示所獲得焊料電鍍NiP粒子(焊料包覆球)的截面SEM影像。該焊料電鍍NiP粉體的平均粒徑d50值係76.6μm，[(d90-d10)/d50]係0.56。又，焊料電鍍NiP粒子的真球度係0.994，其與實驗例1的NiP粒子真球度間幾乎沒有變化，確認到即便形成較厚的焊料層，真球度亦幾乎不會降低，即依大致均勻厚度(10.25μm)形成焊料層。由圖3(b)的SEM影像亦得知形成厚度均勻的焊料層。
(產業上之可利用性)
本發明的焊料包覆球係可使用於例如小型且高密度半導體封裝的電氣連接。
10A、10B、10C‧‧‧焊料包覆球
11‧‧‧核(NiP核)
12‧‧‧焊料層(焊料電鍍層)
13‧‧‧鍍Cu層
14‧‧‧鍍Ni層

Claims (9)

  1. 一種焊料包覆球，係具備有：含Ni及P的球狀核、及依包覆上述核之方式形成的焊料層。
  2. 如請求項1之焊料包覆球，其中，進一步具備有在上述核與上述焊料層之間形成的鍍Cu層。
  3. 如請求項2之焊料包覆球，其中，進一步具備有在上述鍍Cu層與上述焊料層之間形成的鍍Ni層。
  4. 如請求項2或3之焊料包覆球，其中，上述鍍Cu層的厚度係0.01μm以上且50μm以下。
  5. 如請求項1至4中任一項之焊料包覆球，其中，上述焊料層的厚度係0.01μm以上且50μm以下。
  6. 如請求項1至5中任一項之焊料包覆球，其中，上述核的平均粒徑係150μm以下，真球度係0.98以上。
  7. 如請求項1至6中任一項之焊料包覆球，其中，上述核係含有：1質量%以上且15質量%以下的P、上限為18質量%之任意添加的Cu、以及除上述Cu之外上限為5質量%之進一步任意添加的Sn，其餘係Ni與不可避免的雜質。
  8. 一種焊料包覆球之製造方法，係請求項1至7中任一項之焊料包覆球的製造方法，包括有：準備上述核的步驟、以及利用無電解還原法製造下述粉體的步驟；該粉體係由含Ni及P的球狀粒子所構成的粉體，當將利用雷射繞射散射法獲得的積算體積分佈曲線中表示90體積%、10體積%及50體積%的粒徑分別設為d90、d10及d50時，滿足[(d90-d10)/d50]≦0.8。
  9. 如請求項8之焊料包覆球之製造方法，其中，進一步包括有：利用電解電鍍形成包覆上述核的焊料層之步驟。
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