TW201424024A - 光學耦合裝置 - Google Patents

光學耦合裝置 Download PDF

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Publication number
TW201424024A
TW201424024A TW102145403A TW102145403A TW201424024A TW 201424024 A TW201424024 A TW 201424024A TW 102145403 A TW102145403 A TW 102145403A TW 102145403 A TW102145403 A TW 102145403A TW 201424024 A TW201424024 A TW 201424024A
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TW
Taiwan
Prior art keywords
light
resin layer
lead frame
optical coupling
emitting device
Prior art date
Application number
TW102145403A
Other languages
English (en)
Inventor
Yukio Nomura
Original Assignee
Renesas Electronics Corp
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Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW201424024A publication Critical patent/TW201424024A/zh

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    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
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Abstract

本發明關於一種光學耦合裝置，包含第一導線架、安裝於第一導線架上的發光裝置、用以接收由發光裝置所輸出之光學信號的光接收裝置、覆蓋發光裝置的透光性矽基樹脂層、以及連接第一導線架及發光裝置的導電線。導電線係以含有銀之材料製成。

Description

光學耦合裝置
本發明關於一種光學耦合裝置。
以光耦合器和光學金氧半場效電晶體(MOSFET)為例之光學耦合裝置係為眾所周知。光學耦合裝置具有發光裝置和光接收裝置。在光學耦合裝置中，電信號係由發光裝置轉換成光學信號。光學信號係供應至光接收裝置。當接收到光學信號時，光接收裝置變成導電狀態。因此，當維持發光裝置和光接收裝置之間的電絕緣狀態時，可傳輸信號。
作為光學耦合裝置之範例，專利文獻1(JP H10-209488A)中所揭露之光學耦合裝置係為眾所周知。在專利文獻1之光學耦合裝置中，發光裝置係設置在一次側導線架上並線接合至佈線之導線架上，且光接收裝置係設置於二次側導線架上並被線接合至佈線之導線架上。發光裝置和光接收裝置係由例如環氧樹脂之一次透光性模具所覆蓋，且在其週邊係形成由遮光環氧樹脂及其相似物所形成之二次模製層。需注意發光裝置和光接收裝置係藉由使用金、銀、鋁、銅或及相似物進行線接合。
參考資料
[專利文獻1]JP H10-209488A
在根據專利文獻1之光學耦合裝置中，發光裝置和光接收裝置係以環氧樹脂密封。
另一方面，因考量到樹脂之屬性等等，亦有將發光裝置和光接收裝置以矽基樹脂層密封之情形。另外，發光裝置係有時以Au線與導線 架連接。在此情況下，Au線係亦由矽基樹脂層所覆蓋。
在此，就本發明之發明人所了解，矽基樹脂層和Au線之間的粘著特性弱。因此，矽基樹脂層和Au線之間有時會產生一間隙。該間隙會妨礙光的傳輸。
其他問題和新的特徵將從實施方式和附圖變得更為清楚。
根據一實施例之光學耦合裝置包含第一導線架、安裝於該第一導線架上之發光裝置、用以接收從該發光裝置所發射的光之光接收裝置、設置以具有透光性特性並覆蓋該發光裝置的矽基樹脂層、以及連接該第一導線架及該發光裝置之導電線。該導電線係由含有銀之材料所製成。
根據上述之該實施例，光學耦合裝置之提供可提高光的傳輸速率。
1‧‧‧發光裝置
2‧‧‧光接收裝置
3‧‧‧導電膏
4-1‧‧‧第一導線架
4-2‧‧‧第二導線架
5-1‧‧‧第一相對區域
5-2‧‧‧第二相對區域
6‧‧‧矽基樹脂層
7‧‧‧透光性樹脂層
8‧‧‧遮光樹脂層
9‧‧‧Au線
10‧‧‧光學耦合裝置
11‧‧‧間隙
12-1‧‧‧Ag線
12-2‧‧‧Ag線
13‧‧‧干擾遮光樹脂層
14‧‧‧第一部分
15‧‧‧第二部分
16‧‧‧裂紋
17‧‧‧透光性絕緣膜
c‧‧‧間隔
圖1為一剖面圖，其示意性地顯示根據第一實施例之光學耦合裝置；圖2為一剖面圖，其示意性地顯示根據一比較範例之光學耦合裝置；圖3為一剖面圖，其示意性地顯示根據該比較範例之光學耦合裝置；圖4為一剖面圖，其示意性地顯示根據第一實施例之光學耦合裝置；圖5為一剖面圖，其示意性地顯示根據第二實施例之光學耦合裝置；圖6為一圖式，其示意性地顯示金屬及矽基樹脂層之間的界面部分之狀態；圖7為一剖面圖，其示意性地顯示根據參考範例1之光學耦合裝置；圖8為一圖式，其示意性地顯示根據參考範例2之光學耦合裝置；圖9為一分離視圖，其示意性地顯示根據第五實施例之光學 耦合裝置。
圖10為一剖面圖，其示意性地顯示根據第五實施例之一比較範例之光學耦合裝置；圖11為一剖面圖，其示意性地顯示根據第五實施例之比較範例之光學耦合裝置；圖12為一剖面圖，其示意性地顯示根據第五實施例之光學耦合裝置；且圖13為一剖面圖，其示意性地顯示根據第六實施例之光學耦合裝置。
光學耦合裝置之實施例將參照隨附圖式描述於下。
[第一實施例]
圖1為一剖面圖，其示意性地顯示根據第一實施例之光學耦合裝置。
如圖1所示，光學耦合裝置10包含發光裝置1、光接收裝置2、第一導線架4-1、第二導線架4-2、矽基樹脂層6、透光性樹脂層7、及遮光樹脂層8。
第一導線架4-1包含第一相對區域5-1，且第二導線架4-2包含第二相對區域5-2。第一導線架4-1和第二導線架4-2係配置俾使第1相對區域5-1和第二相對區域5-2彼此相對。
發光裝置1係藉由導電膏3(安裝材料)安裝在第一相對區域5-1中。光接收裝置2亦藉由導電膏3安裝在第二相對區域5-2中。發光裝置1係使用如砷化鎵和砷化鋁鎵之材料。
發光裝置1係經由Ag線12-1連接至第一導線架4-1。Ag線12-1為一合金線，其包含佔該合金線之50或更多重量百分比之Ag。
相似於發光裝置1，光接收裝置2亦經由Ag線12-2連接至第二導線架4-2。
矽基樹脂層6係設置以保護發光裝置1。換言之，矽基樹脂層6係設置以覆蓋發光裝置1。矽基樹脂層6具有透光特性。在此，矽基樹 脂層6係設置以完全覆蓋Ag線12-1。需注意矽基樹脂層6為一包含在主鏈中具有矽氧烷鍵之樹脂為其主要成分的樹脂層。
透光性樹脂層7係設置以覆蓋矽基樹脂層6及光接收裝置2。透光性樹脂層7包含如環氧樹脂之樹脂。期望的是使用環氧樹脂時，為了強度及阻燃性，如二氧化矽之填充物係混合至約70%的重量百分比。
遮光樹脂層8係設置以防止外部光被輸入。遮光樹脂層8係設置以覆蓋透光性樹脂層7。如黑色環氧樹脂層之材料層係用以作為遮光樹脂層8。
在上述光學耦合裝置10中，電信號係經由第一導線架4-1供應至發光裝置1。發光裝置1以電信號為基礎發射光學信號。來自發光裝置1之光學信號係經由矽基樹脂層6和透光性樹脂層7供應至光接收裝置2。在光接收裝置2中，光學信號係轉換成電信號，並經由第二導線架4-2傳輸至目的地設備(未顯示)。
接著將針對上述光學耦合裝置10之製造方法進行說明。
首先，藉由導電膏3將發光裝置1安裝在第一導線架4-1上。相似地，藉由導電膏3將光接收裝置2安裝至第二導線架4-2上。
接著，發光裝置1係經由Ag線12-1連接至第一導線架4-1。此外，光接收裝置2亦相似地經由Ag線12-2連接至第二導線架4-2。
接著，矽基樹脂係供應以覆蓋發光裝置1和Ag線12-1。因此形成矽基樹脂層6。
接著，第一導線架4-1和第二導線架4-2係配置俾使第一相對區域5-1相對於第二相對區域5-2。
接著，供應用於透光性樹脂層7之環氧樹脂，俾使光接收裝置2和矽基樹脂層6受到覆蓋，且該環氧樹脂係接著硬化。此時，環氧樹脂係以高溫狀態(例如，160℃至200℃)供應並接著冷卻。
其後，作為遮光樹脂層8之環氧樹脂係供應以覆蓋透光性樹脂層7。
因此得到光學耦合裝置10。
在此，根據本實施例，發光裝置1係由矽基樹脂層6所覆蓋。基於此原因，可防止發光裝置1之劣化。具體地，當諸如砷化鎵和砷化鋁 鎵之半導體係用於發光裝置1時，施加之應力可能導致發光特性之劣化。相較於環氧樹脂層，矽基樹脂層6具有高彎曲性。根據本實施例，由於發光裝置1係由矽基樹脂層6所覆蓋，應力係緩和，從而防止發光裝置1之劣化。
較佳地，在矽基樹脂層6中之填充物(如氧化矽)的含量為20重量百分比或更少。此外，更佳地，填充物不包含在矽基樹脂層6內。矽基樹脂係為液態樹脂。當填充物之含量超過20重量百分比時，矽基樹脂層6的彎曲性(液態性)係降低。因此，可能出現矽基樹脂層6在製造時無法形成於發光裝置1的周圍部分之情形。此外，當填充物的含量超過20重量百分比時，矽基樹脂層6的硬度係變高。因此，便難以充分地緩和施加至發光裝置1之應力。
再者，根據本實施例，由於使用Ag線12，因此可獲得高的光傳輸速率。此點將描述於下。
為了與根據本實施例之光學耦合裝置10進行比較，將針對根據比較範例之光學耦合裝置10進行說明。圖2為一剖面圖，其示意性地顯示根據一比較範例之光學耦合裝置；在根據比較範例之光學耦合裝置10中，發光裝置1以及第一導線架4-1係藉由Au線9而非Ag線12-1彼此連接。其它構件被視為類似於圖1所示之本實施例之光學耦合裝置10之構件。
樹脂和金屬之間的鍵結主要為氫鍵。在金屬當中，Au最難以形成氫鍵。因此，Au線9和矽基樹脂層6之間的粘著力變弱。因此，如圖2所示，在根據比較範例之光學耦合裝置10中，矽基樹脂層6變得容易從Au線9剝離，且間隙11係易於產生於矽基樹脂層6和Au線9之間。間隙11吸收光並防止光的傳輸或擴散。
相反地，用於本實施例中之Ag線12-1在與矽基樹脂的粘著力優於Au線9。這是因為相較於Au，Ag容易氧化及硫化，因此易於與矽基樹脂群產生氫鍵。事實上，本發明之發明人進行粘著特性之實驗，其中矽基樹脂係塗佈在Ag線和Au線之每一者上並硬化。接著，觀察每條線和矽基樹脂之間是否存在間隙。結果，當使用Au線時，觀察到Au線和矽基樹脂之間的間隙。然而，當使用Ag線時，並未觀察到任何間隙。此外，當在Ag線中之Ag的含量為50重量百分比以上時，可得到一定程度的粘著 力，該程度之粘著力可有效地防止間隙之產生。因此，能防止間隙11產生於矽基樹脂層6和Ag線12-1之間。
在製造光學耦合裝置10的期間，可能出現間隙11之尺寸增加之情形。如前所述，為求強度和阻燃性，填充物係較佳地混合在透光性樹脂層7(環氧樹脂)中。當填充物受混合時，熱膨脹係數係為低(例如，約22ppm)。另一方面，矽基樹脂層6的熱膨脹係數係為大(例如，約400ppm)。如前所述，當形成透光性樹脂層7時，環氧樹脂係以高溫狀態(約160℃至200℃)供應。其後，環氧樹脂係冷卻至室溫(25℃左右)。在此冷卻之時，由於熱膨脹係數之差距，矽基樹脂層6相較於透光性樹脂層7大幅收縮。因此，如圖3所示，促進了矽基樹脂層6從Au線9剝離，且間隙11之尺寸係增加。因此，光的傳輸速率係進一步惡化。
相反地，如圖4所示，根據本實施例，由於使用Ag線12-1，矽基樹脂層6並未剝離，且間隙11並未產生。基於此原因，即使當透光性樹脂層7形成時亦未促進剝離，以防止光傳輸速率之惡化。
再者，根據本實施例，即使從Ag線12-1的光反射率之觀點而言，仍可提升光傳輸之速率。換言之，相較於例如Au和Cu之其它金屬材料，Ag具有高的光反射率。具體地，當光的波長為700nm時，Au的光反射率為97.0、Ag的光反射率為98.5且Cu的光反射率為97.5。此外，當光的波長為1000nm時，Au的光反射率為98.2、Ag的光反射率為98.9且Cu的光反射率為98.5。高的光反射率使由發光裝置1所發出的光可輕易地到達光接收裝置2。因此，可改善光傳輸速率。換言之，根據本實施例，從光反射率的觀點而言，光的傳輸速率亦可獲得改善。
此外，若諸如砷化鎵和砷化鋁鎵之半導體材料係用於發光裝置1且Cu係用於電線，已知發光裝置1之發光率係隨著經過的時間減少。相反地，當使用Ag線12-1時，即使維持很長的時間發光率亦不會減少。
如前所述，根據本實施例，光傳輸或擴散率可得到改善。高速操作和高電流傳輸速率在光學耦合裝置10中係為必要。根據本實施例，為了提高光的傳輸速率，到達需光學耦合裝置10所必要的電流傳輸速率可在初始時間或當光學耦合裝置10儲存很長一段時間時獲得。
另外，在本實施例中，如圖4所示，Ag線12-1係完全地由 矽基樹脂層6所覆蓋。另一方面，在專利文獻1(JP H10-209488A)中所述之光學耦合裝置10中，覆蓋發光裝置之樹脂層並未完全覆蓋連接至該發光裝置的線。換言之，線係配置以與不同樹脂層之間的界面相交。
若Ag線12-1係配置以與矽基樹脂層6和透光性樹脂層7(環氧樹脂層)之間的界面相交，當進行溫度循環試驗時，Ag線12-1容易斷裂。如上所述，Ag線12-1和矽基樹脂層6之間的粘著力高。此外，Ag線12-1係牢牢地固定至矽基樹脂層6。相似地，Ag線12-1和透光性樹脂層7之間的粘著力高。因此，Ag線12-1係牢牢地固定至透光性樹脂層7。在溫度循環試驗中，矽基樹脂層6和透光性樹脂層7係熱膨脹或熱收縮。當Ag線12-1係固定至矽基樹脂層6和透光性樹脂層7兩者時，矽基樹脂層6和透光性樹脂層7之間的熱膨脹率之差異導致強大的力施加至Ag線12-1。基於此原因，經由加熱後，Ag線12-1容易斷裂。
相反地，在本實施例中，Ag線12-1係徹底地或完全地由矽基樹脂層6所覆蓋。換言之，Ag線12-1不與界面相交。因此，即使進行溫度循環試驗時，仍可防止因熱膨脹率之差異所引發的力被施加至Ag線12-1。因此，可避免線的斷裂。
需注意當使用Au線9時，粘著特性弱，從而Au線9並非牢牢地固定至矽基樹脂層6。因此，無需考慮在溫度循環試驗中線的斷裂。換言之，在本實施例中，因為使用Ag線12-1且使用矽基樹脂層6，因此理想的情況為Ag線12-1完全由矽基樹脂層6所覆蓋。
需注意在本實施例中，已描述了矽基樹脂層6覆蓋發光裝置1且不覆蓋光接收裝置2的情況。然而，矽基樹脂層6可能不止覆蓋發光裝置1，而且亦覆蓋光接收裝置2。
[第二實施例]
接著將針對第二實施例進行說明。
圖5為一剖面圖，其示意性地顯示根據第二實施例之光學耦合裝置。在第一實施例中，第一相對區域5-1和第二相對區域5-2係設置以彼此相對。相反地，在本實施例中，如圖5所示，第一導線架4-1上之發光裝置1的安裝部(第一安裝區域)以及第二導線架4-2上之光接收裝置2的安裝部(第二安裝區域)係設置在相同之平面上。另外，在本實施例中， 矽基樹脂層6係提供以覆蓋不僅發光裝置1以及光接收裝置2。再者，矽基樹脂層6係由干擾遮光樹脂層13所覆蓋。換言之，根據本實施例之光學耦合裝置10係為所謂的反射型單模光耦合器。關於其他構件，由於可採用相似於第一實施例之配置，故省略詳細的說明。
如圖5所示，亦在本實施例中，發光裝置1係經由Ag線12-1連接至第一導線架4-1。此外，光接收裝置2係經由Ag線12-2連接至第二導線架。矽基樹脂層6係提供以完全覆蓋發光裝置1、光接收裝置2、Ag線12-1以及Ag線12-2。
在本實施例中，由發光裝置1所輸出之光學信號係直接或藉由干擾遮光樹脂層13之反射供應至光接收裝置2。
在本實施例中，Ag線12-2係用以作為光接收裝置2和第二導線架4-2之間的線，此可進一步提高光的傳輸速率。
需注意在本實施例中，已描述了矽基樹脂層6覆蓋發光裝置1及光接收裝置2兩者之情形。然而，即使在矽基樹脂層6僅覆蓋發光裝置1且未覆蓋光接收裝置2之情況，仍可應用本實施例。
[第三實施例]
接著，將針對第三實施例進行說明。在本實施例中，將針對干擾遮光樹脂層13之材料進行說明。由於其它構件可使用類似於第二實施例之配置，故省略詳細之說明。
在本實施例中，其中之氧化鈦係混合於樹脂(如：環氧樹脂)的層係用以作為干擾遮光樹脂層13。從發光裝置1輸出的光之反射率，可藉由混合氧化鈦而提高。從發光裝置1發射的光係防止被干擾遮光樹脂層13所吸收，且光傳輸速率可進一步提高。
另一方面，干擾遮光樹脂層13可形成以吸收光。例如，吸收光之干擾遮光樹脂層13可藉由將炭黑混合於樹脂(如環氧樹脂)中而獲得。當干擾遮光樹脂層13係形成以吸收光時，能有效地防止外部光傳輸穿過干擾遮光樹脂層13，且可提升光學耦合裝置之可靠性。
[第四實施例]
接著，將針對第四實施例進行說明。在本實施例中，產生矽基樹脂層6之組成物。因為其他配置係相似於上述實施例，故省略詳細的 說明。
在本實施例中，矽基樹脂層6具有包含矽氧烷鍵和羥基的化合物。具體而言，矽基樹脂層6中包含具有矽氧烷鍵和羥基之化合物(粘著成分)，以及樹脂成分，該樹脂成分在主鏈中具有矽氧烷鍵作為主要成分。需注意，在主鏈中具有矽氧烷鍵作為主要成分之樹脂成分本身在其分子中可包含羥基。在此情況下，該主要成分本身係作為包含矽氧烷鍵和羥基的化合物。
根據本實施例，矽基樹脂層6和Ag線12-1之間的粘著力可更加提高。此點將描述於下。
圖6為一圖式，其示意性地顯示金屬及矽基樹脂層之間的界面之結構。吾人應注意在圖6中R係為一基團。Ag相較於Au，係處於易受氧化之狀態。OH基係連接至氧化的金屬表面。金屬表面上的OH基與矽基樹脂層6中所含的羥基(OH基)形成氫鍵。再者，亦有氫鍵經由脫水合成變成配位鍵之情形。在本實施例中，吾人預期氫鍵和配位鍵係混合於Ag線12-1和矽基樹脂層6之間的界面中。
氫鍵之結合能約為0.2eV，而配位鍵之結合能為1~2eV。換言之，配位鍵係形成以獲得高粘著力。根據本實施例，由於矽基樹脂層6具有包含矽氧烷鍵和羥基之化合物，矽基樹脂層6及Ag線12-1係藉由氫鍵和配位鍵牢牢地連接。因此，可獲得高粘著力。
吾人應注意，由於Au係為金屬之中最難以氧化的，因此氫鍵和配位鍵(-O-)係難以形成。另一方面，Ag係易於氧化及硫化，且相較於Au，氫鍵及組合鍵(-O-)係易於形成。換言之，在本實施例中，由於Ag線12-1係用以作為導電線，因此變得容易形成在Ag線12-1和矽基樹脂層6之間的配位鍵。根據本實施例，就此觀點而言，導線和矽基樹脂層6之間的粘著力係提高。
[第五實施例]
接下來，將針對第五實施例進行說明。在本實施例中，第一導線架4-1之結構係依照先前提及的實施例設計。
根據本實施例之一參考範例的光學耦合裝置，將於描述根據本實施例之光學耦合裝置前進行說明。圖7為一剖面圖，其示意性地顯示 根據參考範例1之光學耦合裝置。
如圖7所示，通常，在該光學耦合裝置中，第一導線架4-1具有第一部分14和第二部分15。第一部分14和第二部分15係設置於同一平面上。發光裝置1係置於第一部分14之表面上。Ag線12-1之一端係與第二部分15的表面連接，其另一端係與發光裝置1連接。
在此，第一部分14和第二部分15必須為電絕緣。因此，第一部分14和第二部分15係彼此隔離。
矽基樹脂層6完全覆蓋Ag線12-1。具體而言，矽基樹脂層6係設置在第一導線架4-1上以覆蓋第一部分14和第二部分15之間的區域。吾人應注意矽基樹脂層6係由透光性樹脂層7所覆蓋，而透光性樹脂層7係由遮光樹脂層8所覆蓋。
吾人應注意，至於其它點，係採用與第一實施例之結構類似的結構。
在此，在製造光學耦合裝置時，矽基樹脂層6係供應至第一導線架4-1上以覆蓋Ag線12-1和發光裝置1。此時，可能出現矽基樹脂層6通過第一部分14和第二部分15之間的間隙，繞至第一導線架4-1之背面側的情形。
當矽基樹脂層6繞至背面側時，透光性樹脂層7已部份變薄。因此，進行回流試驗時，裂紋16容易形成於透光性樹脂層7中。特別地，就本發明人所知，當透光性樹脂層7之厚度變得等於或小於30微米時，變得容易產生裂紋16。
在該光學耦合裝置中，發光裝置1和光接收裝置2必須在一定程度上彼此分開，以確保發光裝置1和光接收裝置2之間之絕緣性。另一方面，光學耦合裝置之封裝體必須為薄的。換言之，透光性樹脂層7必須為薄的。因此，當矽基樹脂層6繞至背面側時，透光性樹脂層7容易薄到會產生裂紋16的程度。
為了防止矽基樹脂層6繞至背面側，矽基樹脂層6應僅設置在第一部分14上。圖8為一圖式，其示意性地顯示根據參考範例2之光學耦合裝置。在此參考範例中，矽基樹脂層6係設置在第一部分14上，但未設置在第二部分15上。吾人應注意即使在專利文獻1(JP H10-209488A)中 亦採用此結構。
根據參考範例2之光學耦合裝置，可防止矽基樹脂層6繞至背面側。然而，在根據參考範例2之光學耦合裝置中，Ag線12-1必然與透光性樹脂層7和矽基樹脂層6之間的界面相交。因此，如上述實施例所描述，Ag線12-1變得易於斷裂。
因此，在根據本實施例之光學耦合裝置中，產生第一部分14和第二部分15之間的間隔。
圖9為一剖面圖，其示意性地顯示根據本實施例之光學耦合裝置。在本實施例中，如圖9所示，第一部分14和第二部分15之間的間隔c之尺寸係設定為，使得在供應矽基樹脂層6時，或是從供應矽基樹脂層6至其固化的一段時間，矽基樹脂層6不繞至背面側。至於其他各點，係採用類似於根據圖7所示之參考範例1的光學耦合裝置之結構。
藉由採用如圖9所示之結構，能夠完全以矽基樹脂層6覆蓋Ag線12-1，同時防止矽基樹脂層6繞至背面側。
吾人應注意第一部分14和第二部分15之間的間隔c之實際尺寸係取決於矽基樹脂層6之流動性。例如，當第一導線架(第一部分14和第二部分15)的厚度為「t」時，間隔c之尺寸為「t+0.05」毫米或更少。
接著，將針對根據本實施例之光學耦合裝置的製造方法進行說明。
類似於第一實施例，在本實施例中，藉由導電膏3將發光裝置1裝設或安裝在第一導線架4-1(第一部分14)上。以同樣的方式，藉由導電膏3將光接收裝置2安裝在第二導線架4-2上。
接著，發光裝置1係經由Ag線12-1與第一導線架4-1(第二部分15)連接。以同樣的方式，光接收裝置2係經由Ag線12-2與第二導線架4-2連接。
接著，供應矽基樹脂以覆蓋發光裝置1和Ag線12-1。因此形成矽基樹脂層6。此時，在本實施例中，由於第一部分14和第二部分15之間的間隔c之尺寸係經設計，因此矽基樹脂層6不會繞至背面側。
其後，類似第一實施例，第一導線架4-1和第二導線架4-2係設置以部分地彼此相對，且供應透光性樹脂層7並加以硬化。此外，供 應遮光樹脂層8以覆蓋透光性樹脂層7。
以此方式，可獲得光學耦合裝置10。
根據本實施例，由於第一部分14和第二部分15之間的間隔c之尺寸係經設計，因此矽基樹脂層6不會繞至背面側。因此，可防止裂紋產生於透光性樹脂層7中，並可進一步提高光學耦合裝置之可靠性。
此外，在本實施例中，由於Ag線12-1係由矽基樹脂層6所覆蓋，可獲得如在上述實施例中之相同的操作和效果。圖10和圖11為剖面圖，示意性地顯示根據本實施例之比較範例的光學耦合裝置。在此比較範例中，Au線9係用以作為導電線。其它點係同於本實施例中之各點。在根據本比較範例之光學耦合裝置中，由於Au線9和矽基樹脂層6之間的粘著力小，因此間隙11容易產生於Au線9和矽基樹脂層6之間。如於第一實施例中所描述(參見圖11)，間隙11之尺寸在製造過程中有時會增加。因此，光傳輸速率有時會變慢。另一方面，根據本實施例之光學耦合裝置，如圖12所示，由於使用Ag線12-1，因此導線和矽基樹脂層6之間的粘著力大，而使間隙11難以產生。因此，得以改善光的傳輸速率。
吾人應注意下列方法係使用以作為一種藉由使用Ag線12-1以連接發光裝置1與第一導線架4-1(第二部分15)之技術。
首先，藉由使用毛細管(未顯示)支撐Ag線12-1。接著，加熱Ag線12-1之一端並形成第一球。例如，第一球之形成，係藉由施加高電壓於Ag線12-1和電極(未顯示)之間，並以一電流流動通過電極和Ag線12-1之間的路徑為之。
在使用Ag線12-1的情況下，難以適當地形成第一球。然而，就本發明之發明人所知，具有適當之尺寸之第一球，可藉由控制在氮氣氣氛下之氮氣的流速而形成。
形成第一球後，使Ag線12-1之該端與用於發光裝置1之複數襯墊之其中一者及第二部分15接觸，且施加熱、負載和超聲波至接觸部分。其後，Ag線12-1之另一端係經由毛細管(未顯示)連接至用於發光裝置1之該等襯墊的另一者及第二部分15。
在此處，Ag線12-1之剛性係比用以作為導線之典型的Au線高出約20%。因此，可使用具有與用於Au線之毛細管相同的形狀之毛細 管。此外，可以穩定地進行接合，此係藉由使用與Au線之相同的條件為之，該等條件係關於溫度條件、負載條件和US(超聲波)條件。
另外，Al、Au、Ag、Cu等等可用以作為發光裝置1之襯墊或第二部分15之材料。根據本發明人所了解，即使襯墊的材料為此等金屬之任一者，當Ag線12-1與襯墊連接時亦不會有問題。
另外，當襯墊之材料為Al時，可能會有對於Ag線12-1之合金層和Al襯墊的耐濕性惡化的顧慮。然而，根據本發明人所了解，經證實，藉由產生Ag-Al合金層的形成方法，實際傳送之裝置已通過3000小時之耐濕性檢驗(85℃及85%)。
[第六實施例]
接著，將針對第六實施例進行說明。
圖13為一剖面圖，其示意性地顯示根據本實施例之光學耦合裝置。如圖13所示，在本實施例中，透光性絕緣膜17係設置於發光裝置1和光接收裝置2之間。例如，以聚醯亞胺為主之絕緣膜可用以作為絕緣膜17。
此外，如上述之實施例，發光裝置1係經由Ag線12-1與第一導線架4-1連接。此外，光接收裝置2係經由Ag線12-2與第二導線架4-2連接。
吾人應注意，在第一實施例中，已描述了矽基樹脂層6由透光性樹脂層7所覆蓋之情況(參見圖1)。換言之，在第一實施例中，由發光裝置1所發射的光通過矽基樹脂層6和透光性樹脂層7入射至光接收裝置2。
另一方面，在本實施例中，矽基樹脂層6係提供以除了覆蓋發光裝置1外，亦覆蓋光接收裝置2，如圖13所示。具體而言，矽基樹脂層6被提供以充分地覆蓋發光裝置1、光接收裝置2、Ag線12-1和Ag線12-2。再者，矽基樹脂層6係由干擾遮光樹脂層13所覆蓋。換言之，根據本實施例之光學耦合裝置係為對置型單模光耦合器。
需注意因為在其它點上，可採用與第一實施例相同之結構，故將省略詳細的描述。
在本實施例中，從發光裝置1發射的光直接或由干擾遮光 樹脂層13(遮光層)反射後入射至光接收裝置2。在此，由於Ag線12-1係如上述之實施例用以作為導線，且Ag線12-1係由矽基樹脂層6所覆蓋，因此可提高光的傳輸速率。
此外，根據本實施例，由於設置絕緣膜17，因此可能提高發光裝置1和光接收裝置2之間的絕緣性能。
另外，由於Ag線12-2係用以作為連接光接收裝置2和第二導線架4-2之導電線，因此光的傳輸速率可進一步改善。
吾人應注意，在本實施例中，已描述矽基樹脂層6覆蓋發光裝置1及光接收裝置2兩者之範例。然而，即使矽基樹脂層6覆蓋發光裝置1但不覆蓋光接收裝置2，仍可實施本實施例。換言之，即使設置透光性樹脂層7以如第一實施例一樣覆蓋矽基樹脂層6，仍可實施本實施例。
另外，在本實施例中，誠如第三實施例，干擾遮光樹脂層13可具有吸收光的功能，或者可具有反射光的功能。例如，炭黑可混合於干擾遮光樹脂層13中，或氧化鈦可混合於其中。此外，如已於第三實施例中所描述，當混合氧化鈦時，可以實現具有高的光傳輸速率之光耦合器，此係因為由發光裝置1所發射的光不被干擾遮光樹脂層13所吸收。
如前所述，本發明人之發明已根據實施例加以具體地描述。然而，本發明並非僅限於上述實施例。因此，自然地，在不脫離本發明之精神的範圍內，可進行本發明之各種修改。
1‧‧‧發光裝置
2‧‧‧光接收裝置
3‧‧‧導電膏
4-1‧‧‧第一導線架
4-2‧‧‧第二導線架
5-1‧‧‧第一相對區域
5-2‧‧‧第二相對區域
6‧‧‧矽基樹脂層
7‧‧‧透光性樹脂層
8‧‧‧遮光樹脂層
10‧‧‧光學耦合裝置
12-1‧‧‧Ag線
12-2‧‧‧Ag線

Claims (11)

  1. 一種光學耦合裝置，包含：第一導線架；安裝於該第一導線架上的發光裝置；光接收裝置，用以接收由該發光裝置所輸出之光學信號；透光性矽基樹脂層，設置以覆蓋該發光裝置；以及導電線，設置以連接該第一導線架及該發光裝置，其中該導電線係由包含銀之材料所製成。
  2. 如申請專利範圍第1項之光學耦合裝置，其中該矽基樹脂層係設置以完全覆蓋該導電線。
  3. 如申請專利範圍第1項之光學耦合裝置，其中該導電線包含50重量百分比以上的銀。
  4. 如申請專利範圍第1項之光學耦合裝置，其中該矽基樹脂層係設置以覆蓋該發光裝置及該光接收裝置。
  5. 如申請專利範圍第1項之光學耦合裝置，更包含：第二導線架，其上安裝該光接收裝置，其中該第一導線架具有第一相對區域，且該第二導線架具有第二相對區域，其中該第一導線架及該第二導線架係設置俾使該第一相對區域相對於該第二相對區域，且其中該發光裝置係安裝於該第一相對區域中，且該光接收裝置係安裝於該第二相對區域中。
  6. 如申請專利範圍第1項之光學耦合裝置，更包含：第二導線架，其上安裝該光接收裝置，其中該第一導線架具有其上安裝該發光裝置的第一安裝區域， 其中該第二導線架具有其上安裝該光接收裝置的第二安裝區域，且其中該第一導線架和該第二導線架係設置俾使該第一安裝區域和該第二安裝區域係位於相同平面上。
  7. 如申請專利範圍第1項之光學耦合裝置，更包含：遮光層，設置以覆蓋該矽基樹脂層，並反射從該發光裝置所發射的光。
  8. 如申請專利範圍第1項之光學耦合裝置，更包含：遮光層，設置以覆蓋該矽基樹脂層並吸收光。
  9. 如申請專利範圍第1項之光學耦合裝置，其中該矽基樹脂層具有包含矽氧烷鍵和羥基之化合物。
  10. 如申請專利範圍第1項之光學耦合裝置，其中該第一導線架包含第一部分和第二部分，其中該第一部分和該第二部分係設置在相同平面上以彼此分離，其中該發光裝置係設置於該第一部分之表面上，其中該導電線之一端係與該第二部分之表面連接，且其另一端係與該發光裝置連接，其中該矽基樹脂層係設置於該第一部分之該表面及該第二部分之該表面上，以覆蓋該第一部分及該第二部分之間的區域，且該第一部分和該第二部分之間的間隔具有一尺寸，藉由該尺寸，在供應該矽基樹脂層或在由該供應該矽基樹脂層至其硬化的期間，該矽基樹脂層不繞至該第一部分和該第二部分之背面側。
  11. 如申請專利範圍第1項之光學耦合裝置，更包含：以聚醯亞胺為主之絕緣膜，設置於該發光裝置和該光接收裝置之間。
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