TW201349548A - 太陽能電池的製造方法及太陽能電池的製造裝置 - Google Patents
太陽能電池的製造方法及太陽能電池的製造裝置 Download PDFInfo
- Publication number
- TW201349548A TW201349548A TW102102655A TW102102655A TW201349548A TW 201349548 A TW201349548 A TW 201349548A TW 102102655 A TW102102655 A TW 102102655A TW 102102655 A TW102102655 A TW 102102655A TW 201349548 A TW201349548 A TW 201349548A
- Authority
- TW
- Taiwan
- Prior art keywords
- cells
- ion implantation
- tray
- mounting table
- ion beam
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012023252A JP2013161969A (ja) | 2012-02-06 | 2012-02-06 | 太陽電池の製造方法および太陽電池の製造装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201349548A true TW201349548A (zh) | 2013-12-01 |
Family
ID=48927073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102102655A TW201349548A (zh) | 2012-02-06 | 2013-01-24 | 太陽能電池的製造方法及太陽能電池的製造裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2013161969A (https=) |
| KR (1) | KR101436489B1 (https=) |
| CN (1) | CN103247716A (https=) |
| TW (1) | TW201349548A (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6088964B2 (ja) * | 2013-12-13 | 2017-03-01 | 株式会社東芝 | 半導体製造装置 |
| CN106981540B (zh) * | 2017-03-24 | 2019-07-23 | 东莞帕萨电子装备有限公司 | 离子注入跑片方法和离子注入跑片系统 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000036440A (ko) * | 2000-03-14 | 2000-07-05 | 이준상 | 3차원적인 이온주입에 의한 도전영역 형성방법 |
| US20080296510A1 (en) * | 2004-01-06 | 2008-12-04 | Yasuhiko Kasama | Ion Implantation System and Ion Implantation System |
| JP2005347543A (ja) * | 2004-06-03 | 2005-12-15 | Sharp Corp | イオンドーピング方法およびイオンドーピング装置 |
| JP2006279041A (ja) * | 2005-03-22 | 2006-10-12 | Applied Materials Inc | イオンビームを使用する基板への注入 |
| US8153513B2 (en) | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| JP4530032B2 (ja) * | 2007-11-29 | 2010-08-25 | 日新イオン機器株式会社 | イオンビーム照射方法およびイオンビーム照射装置 |
| KR20100028203A (ko) * | 2008-09-04 | 2010-03-12 | 주식회사 동부하이텍 | 포토레지스트 팝핑을 방지하기 위한 이온주입방법 |
| JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
-
2012
- 2012-02-06 JP JP2012023252A patent/JP2013161969A/ja active Pending
-
2013
- 2013-01-24 TW TW102102655A patent/TW201349548A/zh unknown
- 2013-02-01 KR KR1020130011768A patent/KR101436489B1/ko not_active Expired - Fee Related
- 2013-02-06 CN CN2013100478428A patent/CN103247716A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013161969A (ja) | 2013-08-19 |
| CN103247716A (zh) | 2013-08-14 |
| KR101436489B1 (ko) | 2014-09-02 |
| KR20130090818A (ko) | 2013-08-14 |
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