TW201349548A - 太陽能電池的製造方法及太陽能電池的製造裝置 - Google Patents

太陽能電池的製造方法及太陽能電池的製造裝置 Download PDF

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Publication number
TW201349548A
TW201349548A TW102102655A TW102102655A TW201349548A TW 201349548 A TW201349548 A TW 201349548A TW 102102655 A TW102102655 A TW 102102655A TW 102102655 A TW102102655 A TW 102102655A TW 201349548 A TW201349548 A TW 201349548A
Authority
TW
Taiwan
Prior art keywords
cells
ion implantation
tray
mounting table
ion beam
Prior art date
Application number
TW102102655A
Other languages
English (en)
Chinese (zh)
Inventor
村上喜信
Original Assignee
住友重機械工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 住友重機械工業股份有限公司 filed Critical 住友重機械工業股份有限公司
Publication of TW201349548A publication Critical patent/TW201349548A/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00Ion implantation into wafers, substrates or parts of devices
    • H10P30/20Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0451Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
TW102102655A 2012-02-06 2013-01-24 太陽能電池的製造方法及太陽能電池的製造裝置 TW201349548A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012023252A JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置

Publications (1)

Publication Number Publication Date
TW201349548A true TW201349548A (zh) 2013-12-01

Family

ID=48927073

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102655A TW201349548A (zh) 2012-02-06 2013-01-24 太陽能電池的製造方法及太陽能電池的製造裝置

Country Status (4)

Country Link
JP (1) JP2013161969A (https=)
KR (1) KR101436489B1 (https=)
CN (1) CN103247716A (https=)
TW (1) TW201349548A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088964B2 (ja) * 2013-12-13 2017-03-01 株式会社東芝 半導体製造装置
CN106981540B (zh) * 2017-03-24 2019-07-23 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000036440A (ko) * 2000-03-14 2000-07-05 이준상 3차원적인 이온주입에 의한 도전영역 형성방법
US20080296510A1 (en) * 2004-01-06 2008-12-04 Yasuhiko Kasama Ion Implantation System and Ion Implantation System
JP2005347543A (ja) * 2004-06-03 2005-12-15 Sharp Corp イオンドーピング方法およびイオンドーピング装置
JP2006279041A (ja) * 2005-03-22 2006-10-12 Applied Materials Inc イオンビームを使用する基板への注入
US8153513B2 (en) 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
KR20100028203A (ko) * 2008-09-04 2010-03-12 주식회사 동부하이텍 포토레지스트 팝핑을 방지하기 위한 이온주입방법
JP4766156B2 (ja) * 2009-06-11 2011-09-07 日新イオン機器株式会社 イオン注入装置

Also Published As

Publication number Publication date
JP2013161969A (ja) 2013-08-19
CN103247716A (zh) 2013-08-14
KR101436489B1 (ko) 2014-09-02
KR20130090818A (ko) 2013-08-14

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