CN103247716A - 太阳能电池的制造方法及太阳能电池的制造装置 - Google Patents

太阳能电池的制造方法及太阳能电池的制造装置 Download PDF

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Publication number
CN103247716A
CN103247716A CN2013100478428A CN201310047842A CN103247716A CN 103247716 A CN103247716 A CN 103247716A CN 2013100478428 A CN2013100478428 A CN 2013100478428A CN 201310047842 A CN201310047842 A CN 201310047842A CN 103247716 A CN103247716 A CN 103247716A
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CN
China
Prior art keywords
ion implantation
tray
units
ion
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2013100478428A
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English (en)
Chinese (zh)
Inventor
村上喜信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Publication of CN103247716A publication Critical patent/CN103247716A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
CN2013100478428A 2012-02-06 2013-02-06 太阳能电池的制造方法及太阳能电池的制造装置 Pending CN103247716A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012023252A JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置
JP2012-023252 2012-02-06

Publications (1)

Publication Number Publication Date
CN103247716A true CN103247716A (zh) 2013-08-14

Family

ID=48927073

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013100478428A Pending CN103247716A (zh) 2012-02-06 2013-02-06 太阳能电池的制造方法及太阳能电池的制造装置

Country Status (4)

Country Link
JP (1) JP2013161969A (https=)
KR (1) KR101436489B1 (https=)
CN (1) CN103247716A (https=)
TW (1) TW201349548A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106981540A (zh) * 2017-03-24 2017-07-25 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088964B2 (ja) * 2013-12-13 2017-03-01 株式会社東芝 半導体製造装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1313409A (zh) * 2000-03-14 2001-09-19 株式会社Epon 通过离子注入形成导电区的方法
US20080296510A1 (en) * 2004-01-06 2008-12-04 Yasuhiko Kasama Ion Implantation System and Ion Implantation System
CN101921990A (zh) * 2009-06-11 2010-12-22 日新离子机器株式会社 离子注入装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347543A (ja) * 2004-06-03 2005-12-15 Sharp Corp イオンドーピング方法およびイオンドーピング装置
JP2006279041A (ja) * 2005-03-22 2006-10-12 Applied Materials Inc イオンビームを使用する基板への注入
US8153513B2 (en) 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
KR20100028203A (ko) * 2008-09-04 2010-03-12 주식회사 동부하이텍 포토레지스트 팝핑을 방지하기 위한 이온주입방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1313409A (zh) * 2000-03-14 2001-09-19 株式会社Epon 通过离子注入形成导电区的方法
US20080296510A1 (en) * 2004-01-06 2008-12-04 Yasuhiko Kasama Ion Implantation System and Ion Implantation System
CN101921990A (zh) * 2009-06-11 2010-12-22 日新离子机器株式会社 离子注入装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106981540A (zh) * 2017-03-24 2017-07-25 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Also Published As

Publication number Publication date
TW201349548A (zh) 2013-12-01
JP2013161969A (ja) 2013-08-19
KR101436489B1 (ko) 2014-09-02
KR20130090818A (ko) 2013-08-14

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Application publication date: 20130814