JP2013161969A - 太陽電池の製造方法および太陽電池の製造装置 - Google Patents

太陽電池の製造方法および太陽電池の製造装置 Download PDF

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Publication number
JP2013161969A
JP2013161969A JP2012023252A JP2012023252A JP2013161969A JP 2013161969 A JP2013161969 A JP 2013161969A JP 2012023252 A JP2012023252 A JP 2012023252A JP 2012023252 A JP2012023252 A JP 2012023252A JP 2013161969 A JP2013161969 A JP 2013161969A
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Japan
Prior art keywords
cells
ion implantation
tray
mounting table
ion beam
Prior art date
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Pending
Application number
JP2012023252A
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English (en)
Japanese (ja)
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JP2013161969A5 (https=
Inventor
Yoshinobu Murakami
喜信 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ltd
Original Assignee
Sumitomo Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ltd filed Critical Sumitomo Heavy Industries Ltd
Priority to JP2012023252A priority Critical patent/JP2013161969A/ja
Priority to TW102102655A priority patent/TW201349548A/zh
Priority to KR1020130011768A priority patent/KR101436489B1/ko
Priority to CN2013100478428A priority patent/CN103247716A/zh
Publication of JP2013161969A publication Critical patent/JP2013161969A/ja
Publication of JP2013161969A5 publication Critical patent/JP2013161969A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
JP2012023252A 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置 Pending JP2013161969A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012023252A JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置
TW102102655A TW201349548A (zh) 2012-02-06 2013-01-24 太陽能電池的製造方法及太陽能電池的製造裝置
KR1020130011768A KR101436489B1 (ko) 2012-02-06 2013-02-01 태양전지의 제조방법 및 태양전지의 제조장치
CN2013100478428A CN103247716A (zh) 2012-02-06 2013-02-06 太阳能电池的制造方法及太阳能电池的制造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012023252A JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置

Publications (2)

Publication Number Publication Date
JP2013161969A true JP2013161969A (ja) 2013-08-19
JP2013161969A5 JP2013161969A5 (https=) 2014-01-16

Family

ID=48927073

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012023252A Pending JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置

Country Status (4)

Country Link
JP (1) JP2013161969A (https=)
KR (1) KR101436489B1 (https=)
CN (1) CN103247716A (https=)
TW (1) TW201349548A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015113511A (ja) * 2013-12-13 2015-06-22 株式会社東芝 半導体製造装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106981540B (zh) * 2017-03-24 2019-07-23 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347543A (ja) * 2004-06-03 2005-12-15 Sharp Corp イオンドーピング方法およびイオンドーピング装置
JP2009134923A (ja) * 2007-11-29 2009-06-18 Nissin Ion Equipment Co Ltd イオンビーム照射方法およびイオンビーム照射装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000036440A (ko) * 2000-03-14 2000-07-05 이준상 3차원적인 이온주입에 의한 도전영역 형성방법
US20080296510A1 (en) * 2004-01-06 2008-12-04 Yasuhiko Kasama Ion Implantation System and Ion Implantation System
JP2006279041A (ja) * 2005-03-22 2006-10-12 Applied Materials Inc イオンビームを使用する基板への注入
US8153513B2 (en) 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
KR20100028203A (ko) * 2008-09-04 2010-03-12 주식회사 동부하이텍 포토레지스트 팝핑을 방지하기 위한 이온주입방법
JP4766156B2 (ja) * 2009-06-11 2011-09-07 日新イオン機器株式会社 イオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005347543A (ja) * 2004-06-03 2005-12-15 Sharp Corp イオンドーピング方法およびイオンドーピング装置
JP2009134923A (ja) * 2007-11-29 2009-06-18 Nissin Ion Equipment Co Ltd イオンビーム照射方法およびイオンビーム照射装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015113511A (ja) * 2013-12-13 2015-06-22 株式会社東芝 半導体製造装置

Also Published As

Publication number Publication date
TW201349548A (zh) 2013-12-01
CN103247716A (zh) 2013-08-14
KR101436489B1 (ko) 2014-09-02
KR20130090818A (ko) 2013-08-14

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