KR101436489B1 - 태양전지의 제조방법 및 태양전지의 제조장치 - Google Patents

태양전지의 제조방법 및 태양전지의 제조장치 Download PDF

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Publication number
KR101436489B1
KR101436489B1 KR1020130011768A KR20130011768A KR101436489B1 KR 101436489 B1 KR101436489 B1 KR 101436489B1 KR 1020130011768 A KR1020130011768 A KR 1020130011768A KR 20130011768 A KR20130011768 A KR 20130011768A KR 101436489 B1 KR101436489 B1 KR 101436489B1
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KR
South Korea
Prior art keywords
cells
ion implantation
tray
ion beam
ion
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020130011768A
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English (en)
Korean (ko)
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KR20130090818A (ko
Inventor
요시노부 무라카미
Original Assignee
스미도모쥬기가이고교 가부시키가이샤
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Publication of KR20130090818A publication Critical patent/KR20130090818A/ko
Application granted granted Critical
Publication of KR101436489B1 publication Critical patent/KR101436489B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0471—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
KR1020130011768A 2012-02-06 2013-02-01 태양전지의 제조방법 및 태양전지의 제조장치 Expired - Fee Related KR101436489B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012023252A JP2013161969A (ja) 2012-02-06 2012-02-06 太陽電池の製造方法および太陽電池の製造装置
JPJP-P-2012-023252 2012-02-06

Publications (2)

Publication Number Publication Date
KR20130090818A KR20130090818A (ko) 2013-08-14
KR101436489B1 true KR101436489B1 (ko) 2014-09-02

Family

ID=48927073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130011768A Expired - Fee Related KR101436489B1 (ko) 2012-02-06 2013-02-01 태양전지의 제조방법 및 태양전지의 제조장치

Country Status (4)

Country Link
JP (1) JP2013161969A (https=)
KR (1) KR101436489B1 (https=)
CN (1) CN103247716A (https=)
TW (1) TW201349548A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6088964B2 (ja) * 2013-12-13 2017-03-01 株式会社東芝 半導体製造装置
CN106981540B (zh) * 2017-03-24 2019-07-23 东莞帕萨电子装备有限公司 离子注入跑片方法和离子注入跑片系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060102525A (ko) * 2005-03-22 2006-09-27 어플라이드 머티어리얼스, 인코포레이티드 이온빔을 이용한 기판 이온주입
US20080038908A1 (en) 2006-07-25 2008-02-14 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
KR100923516B1 (ko) * 2007-11-29 2009-10-27 닛신 이온기기 가부시기가이샤 이온빔 조사 방법 및 이온빔 조사 장치
KR20100028203A (ko) * 2008-09-04 2010-03-12 주식회사 동부하이텍 포토레지스트 팝핑을 방지하기 위한 이온주입방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000036440A (ko) * 2000-03-14 2000-07-05 이준상 3차원적인 이온주입에 의한 도전영역 형성방법
US20080296510A1 (en) * 2004-01-06 2008-12-04 Yasuhiko Kasama Ion Implantation System and Ion Implantation System
JP2005347543A (ja) * 2004-06-03 2005-12-15 Sharp Corp イオンドーピング方法およびイオンドーピング装置
JP4766156B2 (ja) * 2009-06-11 2011-09-07 日新イオン機器株式会社 イオン注入装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060102525A (ko) * 2005-03-22 2006-09-27 어플라이드 머티어리얼스, 인코포레이티드 이온빔을 이용한 기판 이온주입
US20080038908A1 (en) 2006-07-25 2008-02-14 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
KR100923516B1 (ko) * 2007-11-29 2009-10-27 닛신 이온기기 가부시기가이샤 이온빔 조사 방법 및 이온빔 조사 장치
KR20100028203A (ko) * 2008-09-04 2010-03-12 주식회사 동부하이텍 포토레지스트 팝핑을 방지하기 위한 이온주입방법

Also Published As

Publication number Publication date
TW201349548A (zh) 2013-12-01
JP2013161969A (ja) 2013-08-19
CN103247716A (zh) 2013-08-14
KR20130090818A (ko) 2013-08-14

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