TW201349548A - Method for manufacturing a solar cell and apparatus for manufacturing the same - Google Patents

Abstract

The invention provides a method for manufacturing a solar cell and an apparatus for manufacturing the same, wherein the ion injection amount is ensured to be uniform both within the facets of a plurality of unit and among the plurality of units. During the first ion injection process, the plurality of units (4) are moved through an ion beam irradiation area (17) to irradiate an ion beam onto the plurality of units (4). During the rotating process of a loading bench, a tray (3) is rotated by 90 degrees by means of a tray rotating mechanism (20), so that the configuration of the tray is changed. After that, during the second ion injection process, the rotated tray is conveyed to enable the plurality of units (4) to pass through the ion beam irradiation area (17). Meanwhile, all the units (4) are varied in configuration relative to the ion beam irradiation area (17). Therefore, the ion injection amount is ensured to be uniform both within the facets of the units (4) and among the plurality of units.

Description

Solar cell manufacturing method and solar cell manufacturing device

The present application claims priority to Japanese Patent Application No. 2012-023252, filed on Jan.

The present invention relates to a method of manufacturing a solar cell and a device for manufacturing a solar cell.

As described in Patent Document 1 below, a device for implanting ions by irradiating a unit with an ion beam in order to add a dopant to a unit of a solar cell. In the device, a plasma is generated by an RF (Radio Frequency) source and an antenna, and ions are accelerated from the plasma toward the cell, thereby implanting ions into the cell.

In this device, two different energy ion implantations are performed, or two different dopants are used for continuous implantation. Further, during the continuous implantation, the front and back of the unit are reversed to perform ion implantation on the front and back surfaces of the unit, or a mask is used to change the implantation pattern.

(previous technical literature) (Patent Literature)

Patent Document 1: Japanese Patent Publication No. 2011-513997

In the above conventional device, although the ion beam is irradiated to a predetermined region, there is a case where the uniformity of the ion beam cannot be maintained in the irradiation region. At this time, unevenness in the amount of ion implantation occurs in the plane of the unit. Further, it is also conceivable that when a plurality of cells arranged in a row are simultaneously irradiated with an ion beam, not only the unevenness of the ion implantation amount is generated in the plane of each cell, but also the unevenness of the ion implantation amount is generated between the plurality of cells. Thus, when a plurality of cells are simultaneously irradiated with an ion beam, it is difficult to make the ion implantation amount uniform in the plane of each unit, and to make the ion implantation amount uniform among a plurality of cells.

An object of the present invention is to provide a method for producing a solar cell and a device for manufacturing a solar cell, which can uniformly ionize an ion implantation amount in a plane of each unit when a plurality of cells are simultaneously irradiated with an ion beam, and can be plural The amount of ion implantation is uniform between the cells.

In the method for manufacturing a solar cell according to the above aspect, a plurality of cells are arranged by arranging a plurality of cells in a single direction in a direction of transport, and ions are implanted into a plurality of cells by irradiating an ion beam to a plurality of cells. The method includes a first ion implantation process for transporting a mounting table such that a plurality of cells pass through a predetermined irradiation region of the ion beam, and irradiating the plurality of cells with the ion beam; and the mounting table rotating process makes The mounting table is rotated by a predetermined angle to change the arrangement of the mounting table; and the second ion implantation process is for transporting the rotated mounting table such that a plurality of cells pass through the irradiation region and irradiate the plurality of cells with the ion beam.

According to the solar cell manufacturing method, in the first ion implantation process, a plurality of cells pass through a predetermined irradiation region of the ion beam, and the plurality of cells are irradiated with an ion beam. Next, in the stage rotation process, the stage is rotated by a predetermined angle to change the arrangement of the stage. Thereafter, in the second ion implantation process, the rotating stage is transported so that a plurality of cells pass through the irradiation region. In the second ion implantation process, since the arrangement of each unit with respect to the ion beam irradiation region is different from that of the first ion implantation process, the unevenness can be prevented even when the ion beam is uneven in the irradiation region. Sexuality continues to affect the distribution of ion implantation in a plurality of cells. Therefore, the ion implantation amount can be made uniform in the plane of each unit, and the ion implantation amount can be made uniform between a plurality of units.

Further, in the method for manufacturing a solar cell, a plurality of cells are arranged in a plurality of directions in a direction orthogonal to one direction, and a width of the irradiation region in a direction orthogonal to the conveyance direction is larger than The width of both ends of a plurality of cells in one direction and a direction orthogonal to one direction. In this case, since a plurality of cells are arranged in two directions, the width of the plurality of cells in the irradiation region can be made even in any of the case before and after the rotation of the mounting table. Passed inside. Thereby, the productivity can be improved.

Further, in the method for manufacturing a solar cell described above, a plurality of cells are arranged in the same direction in one direction and in a direction orthogonal to one direction. the amount. At this time, in either of the rotation of the stage and after the rotation, a plurality of cells can pass through the width of the irradiation region. Thereby, the productivity can be improved.

Further, in the method of manufacturing a solar cell, the transport direction of the mounting table in the second ion implantation process is the same as the transport direction of the mounting table in the first ion implantation process. At this time, ion implantation in a so-called linear mode in which a plurality of stages are continuously conveyed in a constant direction can be performed. Thereby, an increase in throughput can be achieved.

Further, in the above method for manufacturing a solar cell, the mounting table is rotated in an atmospheric pressure environment during the mounting table rotation process. Usually, the irradiation of the ion beam is carried out under a vacuum environment. According to the above method, since the rotation means is provided under the atmospheric pressure environment, it is easy to confirm the operation of the machine or to perform maintenance easily, and it is also easy to restore the device after maintenance.

Further, in the method of manufacturing a solar cell, the transport direction of the mounting table in the second ion implantation process is opposite to the transport direction of the mounting table in the first ion implantation process. At this time, after the plurality of cells pass through the irradiation region in the first ion implantation process, it is possible to maintain the so-called batch type ion implantation in which the plurality of cells pass through the irradiation region while maintaining the carrier in the opposite direction. Thereby, the installation area can be reduced.

Further, a solar cell manufacturing apparatus that solves the above-described problems includes a mounting table in which a plurality of cells are arranged in at least one direction, and a beam generating means for planting a plurality of cells on a mounting table. Irradiating an ion beam to irradiate a predetermined irradiation region; and carrying means for transporting the mounting table to pass a plurality of cells through the irradiation region of the ion beam; And the mounting table rotating means changes the arrangement of the mounting table by rotating the mounting table by a predetermined angle.

According to the solar cell manufacturing apparatus, a plurality of cells pass through a predetermined irradiation region of the ion beam by a transport means, and irradiate an ion beam to a plurality of cells. Next, the arrangement of the mounting table can be changed by rotating the mounting table by a predetermined angle by the mounting table rotating means. Thereafter, the rotating stage is transported by the transport means, whereby a plurality of cells pass through the irradiation region, and the ion beam is again irradiated to the plurality of cells. At this time, since the arrangement of the irradiation regions of the respective cells with respect to the ion beam is different from the arrangement at the time of the previous conveyance, even if the ion beam is uneven in the irradiation region, it is possible to prevent the unevenness from continuing to affect the plurality of cells. The distribution of ion implantation in the medium. Thereby, the ion implantation amount can be made uniform in the plane of each unit, and the ion implantation amount can be made uniform between a plurality of units.

According to the present invention, when the ion beam is simultaneously irradiated to a plurality of cells, the ion implantation amount can be made uniform in the plane of each cell, and the ion implantation amount can be made uniform between the plurality of cells.

1, 1A‧‧‧ ion implantation device

3‧‧‧Tray (mounting table)

4‧‧‧ unit

11‧‧‧First transport device (transportation means)

16‧‧‧Ion beam generator (beam generation means)

17‧‧‧Ion beam irradiation area

20‧‧‧Tray rotation mechanism (mounting table rotation means)

22‧‧‧Transportation device (transportation means)

A, B‧‧‧Transportation direction

Fig. 1 is a plan view showing an embodiment of a solar cell manufacturing apparatus.

Fig. 2(a) is a plan view showing the pallet and the irradiation region of the unit and the ion beam disposed on the mounting table in Fig. 1, and Fig. 2(b) Cross-sectional view of the pallet, the mounting table and the unit.

Fig. 3 is a plan view showing another embodiment of a solar cell manufacturing apparatus.

Fig. 4 (a) to (c) are plan views showing the ion implantation step performed by the manufacturing apparatus of Fig. 3.

Fig. 5 (a) to (c) are plan views showing the ion implantation step subsequent to Fig. 4.

Fig. 6 (a) to (c) are plan views showing the ion implantation step subsequent to Fig. 5.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the description of the drawings, the same reference numerals are given to the same elements, and the description thereof will be omitted.

As shown in Fig. 1, an ion implantation apparatus (manufacturing apparatus for solar cells) 1 is a device for implanting ions into each unit 4 by irradiating an ion beam to a plurality of units 4. The ion implantation apparatus 1 includes a square plate-shaped tray (mounting table) 3 in which a plurality of square plate-shaped cells 4 are arranged in a vertical and horizontal direction, a rectangular plate-shaped pallet 2 on which a tray 3 is placed, and a conveying device 11~14, which is used to transport the pallet 2, the tray 3 and the unit 4 on the surrounding track. The ion implantation apparatus 1 is a so-called linear ion implantation apparatus in which a plurality of pallets 2 and trays 3 are continuously conveyed on a surrounding rail, and a plurality of units 4 disposed on the respective trays 3 are sequentially ion-implanted.

The ion implantation apparatus 1 is provided with a processing chamber 6 whose interior is set to true Empty; a load lock chamber 7 disposed at a front portion of the processing chamber 6 and having its interior changed from atmospheric pressure to vacuum; and an unloading lock chamber 8 disposed at a rear portion of the processing chamber 6 and having its interior changed from a vacuum For atmospheric pressure. The load lock chamber 7 and the unload lock chamber 8 are for blocking the interior of the processing chamber 6 from the atmospheric environment and maintaining the interior thereof in a vacuum state. The processing chamber 6 has a volume inside which accommodates three pallets 2 . The load lock chamber 7 and the unload lock chamber 8 each have a volume for accommodating one pallet 2 therein. The first gate valve 10A and the second gate valve 10B are provided on the inlet side and the outlet side of the load lock chamber 7. The third gate valve 10C and the fourth gate valve 10D are provided on the inlet side and the outlet side of the unloading lock chamber 8.

The ion implantation apparatus 1 is an ion beam generating apparatus (beam generating means) 16 that generates an ion beam that generates a dopant added to the unit 4. A region where the ion beam is irradiated, that is, the ion beam irradiation region 17, is formed in the processing chamber 6. The ion beam irradiation region 17 has a rectangular shape having a long side wider than the width of the tray 3.

The first conveyance device 11 conveys the pallet 2 and the tray 3 toward the conveyance direction A so that the plurality of units 4 on the tray 3 pass through the ion beam irradiation region 17 in the processing chamber 6. The first conveying device 11 conveys the pallet 2 and the tray 3 from the inlet side of the loading lock chamber 7 to the outlet side of the unloading lock chamber 8. The second conveyance device 12 conveys the pallet 2 and the tray 3 which are sent out from the unloading lock chamber 8 in a direction orthogonal to the conveyance direction A. The third conveyance device 13 conveys the pallet 2 and the tray 3 conveyed by the second conveyance device 12 in a direction opposite to the conveyance direction A. The fourth transport device 14 is for transporting the pallet 2 and the tray 3 transported by the third transport device 13 to the loading The inlet side of the lock chamber 7 is loaded. The first to fourth conveying devices 11 to 14 transport the pallet 2 and the tray 3 at a constant speed.

The ion implantation apparatus 1 is provided with an air purifying apparatus for generating an air shower to clean the unit 4. An air shower area 18 is formed on the conveyance path of the third conveyance device 13. The air purifying device cools the unit 4 by the air and removes particles attached to the unit 4. The air shower area 18 has a short side wider than the width of the tray 3 and has a rectangular shape extending toward the carrying direction A. Alternatively, it may be washed with nitrogen instead of air.

A loading/unloading device 19 for carrying out the unit 4 that has been ion implanted a predetermined number of times is provided on the inlet side of the load lock chamber 7. The loading/unloading device 19 carries out the unit 4 for each pallet 2 and the tray 3, and carries the unit 4 in which ions are not implanted into the system together with the pallet 2 and the tray 3.

Fig. 2(a) is a plan view showing the unit 4 and the ion beam irradiation region 17 disposed on the pallet 2 and the tray 3. Fig. 2(b) is a cross-sectional view of the pallet 2, the tray 3, and the unit 4. As shown in Fig. 2(a), the pallet 2 is provided with five units 4 arranged in a vertical direction ((a) in the drawing direction A) and five in the horizontal direction. Each unit 4 is arranged at equal intervals with the adjacent unit 4. Each unit 4 is composed of, for example, polysilicon. Further, the pallet 2 and the tray 3 are constituted by, for example, A6061. The width of the ion beam irradiation region 17 in the direction orthogonal to the conveyance direction A (the width Wb shown in Fig. 2(a)) is larger than the lateral width of the tray (the width Wt shown in Fig. 2(a)) and the longitudinal direction. length. That is, the width of the ion beam irradiation region 17 in the direction orthogonal to the conveyance direction A is larger than the longitudinal The widths of the ends of the five cells 4 are arranged horizontally.

A square groove 2a in which the tray 3 is embedded is formed on the pallet 2. The groove 2a has a shape corresponding to the outer shape of the tray 3. The tray 3 can be embedded in the groove 2a of the pallet 2 even in a state of being rotated by 90 degrees with respect to the pallet 2. Further, even when the tray 3 has a non-square shape, the groove 2a of the pallet 2 can embed the tray 3 therein by rotating the tray 3 by a predetermined angle. For example, when the tray 3 has a rectangular shape, the groove 2a of the pallet 2 can be formed in a square shape having a side slightly longer than the long side of the tray 3.

In the ion implantation apparatus 1 of the present embodiment, as shown in Fig. 1, a tray rotating mechanism (mounting table) for changing the arrangement of the tray 3 by rotating the tray 3 clockwise by 90 degrees is provided in the rear stage of the unloading lock chamber 8. Rotating means) 20. The tray rotating mechanism 20 lifts the tray 3 to temporarily float from the pallet 2, and causes the tray 3 to rotate 90 degrees clockwise and then return it to the pallet 2. The tray rotating mechanism 20 rotates the tray 3 around the center point of the tray 3. The tray rotating mechanism 20 has an arm portion and a clamping portion for operating the tray 3. The tray rotating mechanism 20 is disposed in an atmospheric pressure environment. That is, the tray rotating mechanism 20 rotates the tray 3 in an atmospheric pressure environment.

Next, an ion implantation method (a method of manufacturing a solar cell) performed by the ion implantation apparatus 1 will be described. In the first drawing, for the sake of easy understanding, a specific unit 4 of the unit 4 disposed on the tray 3 is indicated by a black dot.

As shown in FIG. 1, first, the pallet 2 and the tray 3 are conveyed toward the conveyance direction A by the first conveyance device 11, and the lock chamber 7 is loaded into the processing chamber 6. In the processing chamber 6, the pallet 2 and the pallet are carried 3, in which 25 cells are irradiated to the region 17 by the ion beam, and each of the cells 4 is irradiated with an ion beam to implant ions (first ion implantation process). Thereafter, the pallet 2 and the tray 3 are transported to an atmospheric environment through the unloading lock chamber 8.

Next, when the tray 3 and the pallet 2 are positioned below the tray rotation mechanism 20, the tray rotation mechanism 20 is operated to rotate the tray 3 clockwise by 90 degrees, thereby changing the arrangement of the tray 3 (the stage rotation process). As shown in Fig. 1, in the tray 3 after the rotation, the unit 4 marked with black dots moves to the right side of the figure. Thereafter, the tray 3 is conveyed by the second conveying device 12 and the third conveying device 13. The pallet 2 and the tray 3 are conveyed in a direction opposite to the conveyance direction A by the third conveyance device 13. At this time, the pallet 2 and the tray 3 are conveyed so that the 25 units 4 pass through the air shower area 18, thereby cleaning the respective units 4.

Next, the pallet 2 and the tray 3 are conveyed to the inlet side of the load lock chamber 7 by the fourth conveyance device 14. Thereafter, the pallet 2 and the rotated tray 3 are conveyed in the conveyance direction A, and ion beams are irradiated to the respective units 4 in the processing chamber 6 to implant ions (second ion implantation process).

In the ion implantation apparatus 1, such ion implantation is performed four times per tray 3. That is, the ion implantation is performed by dividing into four times. Further, when the tray 3 is rotated by 90 degrees by the tray rotating mechanism 20, the number of divisions of ion implantation is preferably 4n times (n is a positive integer). By performing ion implantation after rotating the tray 3 in this manner, even if there is unevenness in the ion beam irradiation region 17, the ion implantation between the in-plane and the plurality of cells 4 of each unit 4 can be eliminated. Inhomogeneity of the input.

According to the ion implantation apparatus 1 and the ion implantation method performed by the ion implantation apparatus 1, in the first ion implantation process, the plurality of cells 4 pass through the ion beam irradiation region 17, and the ion beam is irradiated to the plurality of Unit 4. Then, in the stage rotation process, the tray 3 is changed by the rotation of the tray rotating mechanism 20 by 90 degrees. Further, in the second ion implantation process, the rotated tray 3 is conveyed so that the plurality of cells 4 pass through the ion beam irradiation region 17. Since the arrangement of each unit 4 with respect to the ion beam irradiation region 17 is different from that in the first ion implantation process in the second ion implantation process, even if the ion beam is in the ion beam irradiation region 17, Evenly, it is also possible to prevent the unevenness from continuing to affect the distribution of the ion implantation amount in the plurality of cells 4. Thereby, the amount of ion implantation in the in-plane of each unit 4 becomes uniform, and the amount of ion implantation becomes uniform between the plurality of units 4.

Conventionally, in order to achieve uniformization of the ion beam itself, adjustment is performed on the ion beam generator 16 side, and special control or device is required. However, the ion implantation apparatus 1 can achieve uniformization of the ion implantation amount in a simple and inexpensive configuration without using a special control or device in the ion beam generating apparatus 16.

Further, a plurality of cells 4 are arranged in a plurality of vertical and horizontal directions, and the width Wb of the ion beam irradiation region 17 in the direction orthogonal to the conveyance direction A is larger than the widths of both ends of the plurality of cells 4 in the longitudinal and lateral directions. At this time, since the unit 4 is arranged in plural in each of the two directions, it is possible to cause the plurality of cells 4 in the ion beam irradiation region 17 in either of the case where the tray 3 is rotated and after the rotation. Width of Wb Passed within the scope. Thereby, the productivity can be improved.

Further, since the plurality of cells 4 are disposed in the same number in the vertical and horizontal directions (the five in the above example), the same can be made in either of the case before and after the rotation of the tray 3. The number of cells 4 passes within the range of the width Wb of the ion beam irradiation region 17. Thereby, the productivity can be improved.

In the second ion implantation process, the conveyance direction of the tray 3 is the same as the conveyance direction of the tray in the first ion implantation process, and the ions in the so-called straight line mode in which the plurality of trays 3 are continuously conveyed in a fixed direction are performed. Implanted. Thereby, an increase in throughput can be achieved.

Further, in the stage rotation process, the tray 3 is rotated by the tray rotating mechanism 20 in an atmospheric pressure environment. Usually, the irradiation of the ion beam is carried out under a vacuum environment. According to this method, since the tray rotating mechanism 20 is provided in an atmospheric pressure environment, it is easy to confirm the operation of the machine or to perform maintenance easily, and it is also easy to restore the device after maintenance.

Fig. 3 is a plan view showing another embodiment of the ion implantation apparatus. The ion implantation apparatus 1A shown in Fig. 3 is different from the ion implantation apparatus 1 shown in Fig. 1, and is a so-called batch in which ion implantation is performed by reciprocating the pallet 2 and the tray 3 in the conveyance direction B. Ion implantation device. The ion implantation apparatus 1A includes a transport device 22 for reciprocating the pallet 2 and the tray 3. An ion beam irradiation region 17 is formed in the processing chamber 6A, and tray rotating mechanisms 20A, 20B are provided on both sides of the ion beam irradiation region 17 in the conveying direction B. The tray rotating mechanisms 20A, 20B have the same mechanism as the tray rotating mechanism 20, but are set to be true Specifications for actions in an empty environment.

4 to 6 are plan views showing the ion implantation step performed by the ion implantation apparatus 1A. In the ion implantation apparatus 1A, first, the pallet 2 and the tray 3 are carried into the load lock chamber 7 (see Fig. 4(a)). Next, the pallet 2 and the tray 3 are carried into the processing chamber 6A by the transport device 22, and the first ion implantation is performed by the plurality of cells 4 through the ion beam irradiation region 17 (the first ion implantation process, see Figure 4 (b)). Next, outside the ion beam irradiation region 17, the tray 3 is rotated clockwise by 90 degrees by the tray rotating mechanism 20B (mounting table rotation process, see Fig. 4(c)).

Next, the pallet 2 and the rotated pallet 3 are transported by the transport device 22, and the plurality of cells 4 are subjected to the second ion implantation process by the ion beam irradiation region 17 (the second ion implantation process, see Fig. 5 ( a)). Next, outside the ion beam irradiation region 17, the tray 3 is rotated clockwise by 90 degrees by the tray rotating mechanism 20A (refer to Fig. 5(b)). Next, the pallet 2 and the rotated pallet 3 are transported by the transport device 22, and the plurality of cells 4 are subjected to the third ion implantation by the ion beam irradiation region 17 (see FIG. 5(c)).

Next, outside the ion beam irradiation region 17, the tray 3 is rotated clockwise by 90 degrees by the tray rotating mechanism 20B (see Fig. 6(a)). Next, the pallet 2 and the rotated pallet 3 are transported by the transport device 22, and the plurality of cells 4 are subjected to the fourth ion implantation by the ion beam irradiation region 17 (see FIG. 6(b)). Thereafter, the pallet 2 and the tray 3 are carried out from the processing chamber 6A, and are unloaded through the unloading lock chamber 7 (see Figure 6 (c)).

Such ion implantation is performed four times per tray 3 in the ion implantation apparatus 1A. That is, the ion implantation is performed by dividing into four times. Further, when the tray 3 is rotated by 90 degrees by the tray rotating mechanisms 20A, 20B, the number of divisions of ion implantation is preferably 4n times (n is a positive integer).

According to the ion implantation apparatus 1A, as in the ion implantation apparatus 1 of the previous embodiment, since the arrangement of the units 4 with respect to the ion beam irradiation area 17 is different in each ion implantation process by the rotation of the tray 3, Therefore, the amount of ion implantation becomes uniform in the in-plane of each unit 4, and the ion implantation amount becomes uniform between the plurality of units 4. Further, since any of the units 4 can be passed in the range of the width Wb of the ion beam irradiation region 17 before and after the rotation of the tray 3, productivity can be achieved. improve.

Further, the conveyance direction of the tray in the second ion implantation process is opposite to the conveyance direction of the tray in the first ion implantation process, and after a plurality of cells are passed through the irradiation region in the first ion implantation process, The so-called batch type ion implantation of the plurality of cells through the illumination area is still maintained while the tray is being transported in the opposite direction. Thereby, the installation area becomes small.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments. For example, the configuration of the plurality of units 4 on the tray 3 is not limited to 5 x 5 columns. It may be an n×n column other than 5×5 columns, or may be an n×m column (m is an integer of 2 or more). In the case of n × m, a plurality of cells can be passed in the range of the width of the ion beam irradiation region 17, and the production efficiency can be improved. And, the configuration of the unit 4 can also It is a column.

The rotation angle by the tray rotating mechanism 20, 20A, 20B is not limited to 90 degrees, and may be, for example, 45 degrees, 60 degrees, 180 degrees or the like. The rotation by the tray rotating mechanism 20, 20A, 20B is not limited to the center point of the tray 3, and may be a point other than the center point of the tray 3, or may be a point outside the tray 3. That is, in the second ion implantation process, the direction of the tray 3 relative to the first ion implantation process is rotated by a predetermined angle. Further, the present invention is not limited to the case where the tray 3 is directly rotated by the tray rotating mechanism 20, 20A, 20B, and the tray 3 can be rotated by rotating the pallet 2.

1‧‧‧Ion implant device

2‧‧‧ pallet

3‧‧‧Tray (mounting table)

4‧‧‧ unit

6‧‧‧Processing chamber

7‧‧‧Load lock chamber

8‧‧‧Unloading the lock chamber

10A‧‧‧1st gate valve

10B‧‧‧2nd gate valve

10C‧‧‧3rd gate valve

10D‧‧‧4th gate valve

11‧‧‧First transport device (transportation means)

12‧‧‧2nd handling device

13‧‧‧3rd handling device

14‧‧‧4th handling device

16‧‧‧Ion beam generator (beam generation means)

17‧‧‧Ion beam irradiation area

18‧‧‧Air shower area

19‧‧‧ Moving in/out device

20‧‧‧Tray rotation mechanism (mounting table rotation means)

A‧‧‧Transportation direction

Claims (7)

In a method of manufacturing a solar cell, an ion beam is irradiated to the plurality of cells by implanting an ion beam in a plurality of cells in a direction in which the plurality of cells are arranged in at least one direction, and the ions are implanted into the plurality of cells. The method includes a first ion implantation process for transporting the mounting stage such that the plurality of cells pass through a predetermined irradiation region of the ion beam, and irradiating the plurality of cells with the ion beam; and the mounting table rotating process The mounting stage is rotated by a predetermined angle to change the arrangement of the mounting table; and the second ion implantation process is configured to transport the rotated mounting table such that the plurality of cells pass through the irradiation region, and irradiate the plurality of cells with the ions bundle. The method of manufacturing a solar cell according to claim 1, wherein the plurality of cells are arranged in a plurality of directions in a direction orthogonal to the one direction and orthogonal to the conveyance direction. The width of the irradiation region in the direction is larger than the width of both ends of the plurality of cells in the one direction and the direction orthogonal to the one direction. The method for manufacturing a solar cell according to the second aspect of the invention, wherein the plurality of cells are disposed in the same direction and in a direction orthogonal to the one direction. The method for producing a solar cell according to any one of the first to third aspect, wherein the transporting direction of the mounting table in the second ion implantation process is in the first ion implantation process. The conveying direction of the mounting table is the same direction. The method for producing a solar cell according to any one of claims 1 to 3, wherein a transport direction of the mounting stage in the second ion implantation process is the same as described above in the first ion implantation process The conveying direction of the mounting table is the opposite direction. The method for producing a solar cell according to any one of claims 1 to 3, wherein the mounting table is rotated in an atmospheric pressure environment in the mounting table rotation process. A solar cell manufacturing apparatus comprising: a mounting table in which a plurality of cells are arranged in at least one direction; and a beam generating means for implanting ions into the plurality of cells on the mounting table Irradiating the ion beam with the predetermined irradiation area; the transport means transporting the mounting table such that the plurality of cells pass through the irradiation region of the ion beam; and the mounting table rotating means rotating the mounting table by a predetermined angle to change the load The configuration of the station.