KR20000036440A - Method for forming a electric region by the three dimentional ion implantation - Google Patents

Abstract

PURPOSE: A method for forming a conductive area by a three-dimensional ion implantation by forming a conductive area on a target such as a moving device or film formed by a highly polymerized compound by a three-dimensional ion implantation is provided. CONSTITUTION: In a method for forming a conductive area by a three-dimensional ion implantation, an accelerated ion is three-dimensionally implanted on a surface of a target formed by a highly polymerized compound to form a conductive area thereon. The ion is implanted in a cool plasma state. Any one of a transparent polymer, a general polymer, an engineering plastic, a functional compound plastic obtained by adding an addition such as a filler to the general polymer and engineering plastic is used for the highly polymerized compound. The target includes an LCD module conveying box, a chip tray, a tape for a semiconductor carrier, a semiconductor wafer conveying carrier, a printed circuit board conveying box, an LCD, an LCD thin film, a sheet, and a semiconductor conveying socket.

Description

Method for forming a electric region by the three dimentional ion implantation}

The present invention relates to a method for forming a conductive region by ion implantation, and more particularly, to a method for forming a conductive region by ion implantation in which a conductive region is formed on a surface of an object made of a polymer compound by a three-dimensional ion implantation process. It is about.

In general, electronic devices, semiconductor devices, etc., in which a highly integrated circuit is formed, are subject to fatal damage to static electricity during the transfer process, and thus the transfer tool for transferring them is manufactured as a polymer compound having conductivity added to suppress static electricity generation. Wherein the transfer tool is a CSP type semiconductor carrier tape (Chip scale package type Semiconductor carrier tape), semiconductor wafer transfer carrier, printed circuit board transport box, electronic module product transport box, LCD (Lipuid Crystal Display) and LCD thin film and LCD Module transport boxes, electronic and semiconductor device packaging containers, trays (Tray) and the like.

In addition, films, sheets, plates, vacuum moldings, and plastic injection moldings, which should be excluded from the effects of electromagnetic waves to maintain their inherent function, are also manufactured as polymer compounds with added conductivity.

The transfer tools, sheets, plates, vacuum moldings, and plastic injection moldings of conventional electronic devices and semiconductor devices are all imported to add conductivity to the transparent resin-based polymer compound that is light in weight and easy to mold for convenience of transportation. It is manufactured by compression molding by mixing carbon (carbon) and carbon fiber (carbon fiber). Since the polymer compound is a material generating static electricity, if the transport tool is manufactured only with the polymer compound, the transport product may be fatally affected by the static electricity. In addition, the weight of the transfer tool becomes heavy and the material becomes opaque by mixing the carbon and carbon fiber.

In addition, a film or the like, to which the influence of electromagnetic waves is to be excluded, is formed by depositing a conductive material thereon to form a conductive film.

However, the transporting tool in which the carbon and the carbon fiber are mixed has a problem in that the overall load is heavy because the carbon is mixed and the logistics transportation cost is high.

In addition, since the polymer compound is opaque due to the mixing of carbon and carbon fiber, the part of the specification, shape, characteristics, etc. of the product described on the surface of the product loaded on the conveying tool is not visible. Only the lower part is used as the conductive opaque material. The company uses non-conductive ordinary transparent materials, and there is a concern that the transported products may be damaged by static electricity.

In addition, by adding carbon and carbon fiber to the polymer compound to add conductivity, the mixing ratio of carbon and carbon fiber is different for each part of the transfer tool, and thus the conductivity added to the transfer tool is different. There was a problem that the product loaded on the transfer tool is rather lethal static electricity.

In addition, there is a problem that the production cost of the transfer tool is expensive by adding conductivity using expensive carbon and carbon fiber, etc., which depend on the total amount of imports in Korea.

In addition, the transfer tool mixed with carbon and carbon fiber, etc. could not be easily recycled according to the mixing of carbon and carbon fiber, and the conventional transfer tool generates a large amount of particles in the use process by mixing carbon and carbon fiber. There was a problem to contaminate the transport product.

In addition, in a vapor-deposited product such as a film in which a conductive film is formed by vapor deposition, the conductive film is peeled off by lowering the adhesion between the interface of the film and the conductive film by depositing a conductive material on the raw material, and the surface is chemically modified by chemical reaction of the deposition material. There was a problem.

It is an object of the present invention to form a conductive region by performing a three-dimensional ion implantation process on an object such as a transfer tool and a film made of a polymer compound, thereby reducing the load of the object to a three-dimensional ion implantation, which can be lighter than conventional. The present invention provides a method for forming a conductive region.

Another object of the present invention is to form a conductive region by performing a three-dimensional ion implantation process on an object such as a transfer tool, a film made of a high molecular compound to the three-dimensional ion implantation to maintain the inherent transparency of the object The present invention provides a method for forming a conductive region.

It is still another object of the present invention to provide a uniform conductive region on the surface of an object by performing a three-dimensional ion implantation process on an object such as a transfer tool or a film made of a polymer compound. It is to provide a method for forming a conductive region.

It is still another object of the present invention to form a conductive region by performing a three-dimensional ion implantation process on an object such as a transfer tool or a film made of a polymer compound, thereby removing the conductive film deposited on the surface of the object and modifying its properties. It is to provide a method for forming a conductive region by three-dimensional ion implantation that can solve the conventional problems.

Still another object of the present invention is to provide a method for forming a conductive region by three-dimensional ion implantation, which can easily form a three-dimensional conductive region in a single process on an object such as a transfer tool or a film made of a polymer compound. There is.

1 is a schematic diagram of an ion implantation apparatus for explaining a method of forming a conductive region by three-dimensional plasma ion implantation according to the present invention.

2 is a perspective view of the inner chamber and the outer chamber shown in FIG.

3 is a process diagram illustrating an embodiment of a method for forming a conductive region on the surface of an LCD module carrying box by three-dimensional plasma ion implantation according to the present invention.

4 is a view for explaining the change in the molecular chain surface of the LCD module carrying box appearing by performing a three-dimensional plasma ion implantation process to the LCD module carrying box according to the present invention.

※ Explanation of symbols for main parts of drawing

2: Loading unit 4: LCD module carrying box

6: first preliminary chamber 8: first low vacuum pump

10, 32: gate valve 11: process chamber

12: outer chamber 14: inner chamber

15: distribution hole 16: high vacuum pump

20 gas supply source 22 ion gun

26: holder 28: power

30: second prechamber 34: second low vacuum pump

The method for forming a conductive region by three-dimensional ion implantation according to the present invention for achieving the above object is characterized in that the conductive region is formed by three-dimensionally injecting accelerated ions to the surface of the object made of a polymer compound .

The ion can be implanted in a cold plasma state.

As the polymer compound, any one of a functional compound plastic having added functionality such as a transparent polymer, a general purpose polymer, an engineering plastic, and an additive such as wheeler to the general purpose polymer and the engineering plastic may be added.

In addition, the object is any one of the LCD module transport box, chip tray, semiconductor carrier tape, semiconductor wafer transport carrier, printed circuit board transport box, electronic module product transport box, LCD, LCD thin film, sheet and socket for semiconductor transport Can be.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram of an apparatus for explaining a method for forming a conductive region on a surface of an LCD module carrying box by plasma ion implantation according to the present invention, and FIG. 2 is a perspective view of an inner chamber and an outer chamber shown in FIG.

An apparatus for forming a conductive area in an LCD module transport box, that is, an object by plasma ion implantation according to the present invention is installed in a clean room in which the number of particles is limited, as shown in FIG. 1. , LCD module carrying box (4) made of a polymer compound is provided with a loading unit (2) sequentially loaded. As the polymer compound, general-purpose polymers such as transparent polymer, polyethylene (PE), polypropylene (PP), high-impact-polystyrene (HIPS), and acrylonitrile-butadiene-styrene (ABS), polycarbonate (PC), N6 (Nylon 6), and N66 (Nylon66), Modified Polypenylene Oxide (MPPO), Polysulfon (PSU), Polyethersulfon (PES), Polyether-etherketone (PEEK), and a wheeler for imparting functionality to the general-purpose polymer or engineering plastic. Mixed functional compound plastics and the like can be used.

In addition, the LCD module carrying box 4 of the loading unit 2 is provided by the transfer means and has a first preliminary chamber 6 waiting for a predetermined time for process progress. The first preliminary chamber 6 maintains an internal pressure of about 10 ⁻⁴ Torr by pumping the first low vacuum pump 8.

In addition, the first preliminary chamber 6 and the process chamber 11 in which the ion implantation process is performed in the cold plasma state are connected to each other with the gate valve 10 interposed therebetween. The process chamber 11 is composed of a cylindrical outer chamber 12 and an inner chamber 14 accommodated therein as shown in FIG. Here, a plurality of distribution holes 15 are formed on the surface of the inner chamber 14, and both ends of the LCD module carrying box 4 inserted from the first preliminary chamber 6 are rotated by 90 ° in the interior chamber 14. Holder 26 is provided.

In addition, the outer chamber 12 of the process chamber 11 is connected to a high vacuum pump 16 that can form an internal pressure of about 10 ^-6 Torr in the separation space between the outer chamber 12 and the inner chamber 14. It is.

In addition, one side of the outer chamber 12 of the process chamber 11 may supply a reaction gas such as nitrogen gas, argon gas, helium gas, and hydrogen gas into a space between the outer chamber 12 and the inner chamber 14. A gas supply source 20 is connected, and ions generated by nitrogen gas, argon gas, helium gas, hydrogen gas, etc., on the other side of the outer chamber 12 of the process chamber 11 are also internal to the outer chamber 12. An ion gun 22 that can be supplied to the spaced space between the chambers 14 is connected.

In addition, the external chamber 12 of the process chamber 11 is connected to a power source 28 capable of applying high frequency power controlled by a pulse generator (not shown), and the external chamber 12. And the inner chamber 14 are grounded at the same point.

The process chamber 11 and the second preliminary chamber 30 are connected to each other with the gate valve 32 interposed therebetween. The second prechamber 30 maintains an internal pressure of about 10 ⁻⁴ Torr by pumping the second low vacuum pump 34.

Hereinafter, a method of forming a conductive region in the LCD module carrying box using the plasma ion implantation device having the above-described structure will be described in detail with reference to FIG. 3.

The method of forming the conductive region by the three-dimensional plasma ion implantation according to the present invention is to put the LCD module carrying box 4 which is the conductive region forming target to the inner chamber 14 of the process chamber 11 in step S2. Begins. The input of the LCD module carrying box (4) is the first preliminary chamber (6) which maintains an internal pressure of about 10 ^-4 Torr by the first low vacuum pump (8) in the loading section (2) by a conveying means. After being transferred to, it is made to be transferred to the inner chamber 14 through the gate valve 10 again by the transfer means. At this time, the process chamber 11 maintains an internal pressure of about 10 ⁻⁶ Torr by the high vacuum pump 16.

Subsequently, in step S4, the gas supply source 20 supplies the reaction gas into the separation space between the outer chamber 12 and the inner chamber 14, and in the power supply 28, a specific current, voltage, and As a high-frequency power having a frequency or the like is applied to the outer chamber 12 to form a magnetic field in the space between the outer chamber 12 and the inner chamber 14, the reaction gas receives energy by the magnetic field and cold plasma. ) Is switched to the state.

Next, in step S6, the ion gun 22 supplies ions generated by nitrogen gas, argon gas, helium gas, hydrogen gas, and the like to the spaced space between the outer chamber 12 and the inner chamber 14.

Subsequently, in step S8, the ions accelerated and supplied between the outer chamber 12 and the inner chamber 14 in step S6 are internally formed through the distribution hole 15 of the inner chamber 14 in a cold plasma state. It is supplied to the primary ion implantation three-dimensionally to the entire surface of the LCD module carrying box (4) to form a conductive area. In the first ion implantation process, the ion energy is 30 KeV to 2 GeV, and the ion has a surface resistance in the range of 10E4 Ω / Square to 10E13 Ω / Square with a thickness of several hundreds of micrometers to several micrometers, for example, 10E8. It is precisely controlled and injected, such as Ω / Square to 10E9 Ω / Square, and the ion dose may be 1 × 10 ² ions / cm 2 to 5 × 10 ²⁰ ions / cm 2 or more.

Next, in step S10 to rotate the LCD module carrying box 4 by 90 ° using the holder (26).

Subsequently, a second ion implantation process of injecting ions three-dimensionally into the entire surface of the LCD module carrying box 4 is performed again in step S12 to reinforce the conductive region. The step S12 may be omitted, but the ion implantation amount may not be constant on a part of the surface of the LCD module carrying box 4 by the primary ion implantation. Make uniform ion implantation amount on the entire surface of 4). At this time, the front surface of the LCD module carrying box 4 is saturated as shown in FIG. 4A by the primary and secondary ion implantation processes described above, or as shown in FIG. 4B. A conductive region that exhibits the desired electrical conductivity is formed by the cleavage of or the cross-linking of each chain as shown in FIG. 4C. In addition, the hardness of the surface is further improved. do. The surface of the LCD module carrying box 4 can be adjusted to have hydrophilicity or hydrophobicity by adjusting the type of ions, ion energy, etc., and the flame retardant treatment can be improved by ion implantation. In addition, since the conductive region is formed in the ion implantation process, the LCD module carrying box 4 maintains its inherent transparency so that an operator can easily read the description of the LCD module loaded on the LCD module carrying box 4. In addition, the LCD module carrying box 4 of the present embodiment is lighter than the conventional LCD module carrying box by maintaining its own load.

Finally, in step S14, the LCD module carrying box 4 in which the conductive area is formed in the inner chamber 14 of the process chamber 11 is discharged to the outside. The discharge of the LCD module carrying box 4 maintains the internal pressure of about 10 ^-4 Torr by the second low vacuum pump 34 through the gate valve 32 by the transfer means of the LCD module carrying box 4. It is made by being transferred to the second preliminary chamber (30).

In the present embodiment, the description is limited to the LDC module carrying box, but those skilled in the art will understand general-purpose polymers such as transparent polymer, polyethylene (PE), polypropylene (PP), high-impact-polystyrene (HIPS), and acrylonitrile-butadiene-styrene (ABS), Engineering plastics such as PC (Polycarbonate), N6 (Nylon6), N66 (Nylon66), Modified Polypenylene Oxide (MPPO), Polysulfon (PSU), Polyethersulfon (PES), Polyether-etherketone (PEEK) and the above general purpose polymers or engineering plastics Chip tray made of polymer compound such as functional compound plastic mixed with wheeler to impart functionality, tape for semiconductor carrier, carrier for transporting semiconductor wafer, transport box for printed circuit board, transport box for electronic module product Widely applied to LCD, LCD thin film, LCD module carrying box, sheet and semiconductor carrying socket Can that is obvious.

Therefore, according to the present invention, the accelerated ions are injected three-dimensionally on the surface of the object made of the polymer compound in the cold plasma region to uniformly form the conductive region, thereby making the base material lighter than a mixture of carbon and carbon fiber. It is effective to reduce the logistics transportation cost, to maintain the inherent transparency of the object, and to form a uniform conductive area on the surface as a whole.

When the object is a film, the conductive film deposited on the film may be peeled off or chemically denatured, as in the conventional art.

In addition, it is possible to increase the surface hardness of the object, it is possible to reduce the manufacturing cost by using no expensive carbon and carbon fiber, etc., which depend on the total imports at present, as well as import substitution effect.

In addition, it is possible to solve problems such as brittleness and processability, opacity and low recycling rate of the base material mixed with carbon and carbon fiber by not using a mixture of carbon and carbon fiber as a base material, and the surface carbon particles are transported products. There is an effect to prevent acting as a source of pollution.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (4)

3. A method for forming a conductive region by three-dimensional ion implantation, wherein the conductive region is formed by three-dimensionally injecting accelerated ions into a surface of an object made of a polymer compound. The method of claim 1, The method for forming a conductive region by implanting the three-dimensional ion, characterized in that for implanting the ion in a cold plasma state. The method of claim 1, As the polymer compound, any one of the above-described three-dimensionally characterized by using a transparent compound, a general-purpose polymer, an engineering plastic, a functional compound plastic to which functionality is added by adding an additive such as a filler to the general-purpose polymer and the engineering plastic. Method for forming a conductive region by ion implantation. The method of claim 1, The object may be any one of an LCD module transport box, a chip tray, a semiconductor carrier tape, a semiconductor wafer transport carrier, a printed circuit board transport box, an electronic module product transport box, an LCD, an LCD thin film, a sheet, and a socket for semiconductor transport. The conductive region forming method by the three-dimensional ion implantation.