KR101161087B1 - Adjustment target setup method of beam current density distribution and ion implanting apparatus - Google Patents

Abstract

This invention conveys a glass substrate in the direction substantially orthogonal to the longitudinal direction of the ribbon type ion beam supplied into each process chamber from each of the some ion beam supply apparatus, and irradiates with each ribbon type ion beam over the whole surface of a glass substrate. In an ion implantation apparatus in which regions are overlapped with each other to form a substantially uniform ion implantation amount distribution on a glass substrate, an adjustment target of beam current density distribution in each ion beam is set in accordance with ion implantation conditions, An object of the present invention is to efficiently adjust the beam current density distribution.
The adjustment target setting data is retrieved based on the ion implantation conditions set in the ion implantation apparatus. If there is data in the adjustment target setting data that matches the ion implantation conditions, the beam current density readout from the adjustment target setting data is used as the adjustment target of the beam current density of at least one ribbon ion beam of each ribbon ion beam. To set it.

Description

ADJUSTMENT TARGET SETUP METHOD OF BEAM CURRENT DENSITY DISTRIBUTION AND ION IMPLANTING APPARATUS}

The present invention relates to an ion implantation apparatus in which irradiation regions by a plurality of ribbon type ion beams overlap each other to form a predetermined ion implantation amount distribution on a glass substrate.

In recent years, the enlargement of the liquid crystal product represented by liquid crystal television is remarkable. At the semiconductor manufacturing process, in order to process more liquid crystal panels in one process process, the attempt to make a liquid crystal panel multifaceted from a large glass substrate is made with the dimension of a glass substrate large. Corresponding to such a large glass substrate is also required about the ion implantation apparatus which is one of the semiconductor manufacturing apparatuses.

In order to meet such a request, the ion implantation apparatus of patent document 1 has been developed so far.

Patent Literature 1 discloses a technique of performing an ion implantation treatment on the entire surface of a glass substrate using two ion beams smaller than the dimensions of the glass substrate. More specifically, in patent document 1, three directions (X, Y, Z direction) orthogonal to each other are defined as an example of the short side direction of an ion beam, the long side direction of an ion beam, and the advancing direction of an ion beam, as an example. The two ion beams are displaced from each other at positions spaced apart from each other in the X direction so that the irradiation regions by the respective ion beams on the glass substrate partially overlap in the Y direction, thereby causing ion implantation treatment to the glass substrate. It is irradiated in the process chamber performed. And the ion implantation process over the whole glass substrate surface is implement | achieved by conveying a glass substrate along the X direction so that it may cross the long side direction of such an ion beam.

As for the technique of patent document 1, the conveyance speed of a glass substrate is constant. And since uniform injection amount distribution is implement | achieved over the whole surface of a glass substrate, the current density distribution of the ion beam irradiated on a glass substrate is an area | region where two ion beams overlap each other, as shown in FIG. In addition, along the Y direction, the whole is adjusted so that it may become a substantially uniform current density distribution.

Patent Document 1: Japanese Patent Laid-Open Publication No. 2009-152002 (Fig. 1, Fig. 3, Fig. 6, paragraphs 0077 to 0088)

In general, the adjustment of the beam current density distribution in the region where the ion beams overlap each other is complicated by the large number of parameters to be adjusted as compared with the case of adjusting the beam current density distribution of one ion beam. In addition, empirically, it can be seen that the ion implantation conditions of the ion beam irradiated onto the glass substrate influence the adjustment result and the adjustment time of the beam current density distribution of the ion beam. For example, in the case of adjusting the beam current density distribution of the ion beam irradiated onto the glass substrate under certain ion implantation conditions, it is possible to adjust the precision to the extent that the target distribution can be settled in an error range of 1%. There is. For this reason, if the beam current density distribution for each ion beam is blindly adjusted, it may be considered that the accuracy of adjustment to the target distribution is poor, or a long time is required until the entire adjustment is completed.

However, in patent document 1, about adjustment of the beam current density distribution in the area | region in which ion beams overlap each other, the beam current density distribution in the ion beam irradiation area | region which overlaps each other on a glass substrate differs from each other (it does not overlap each other. It is only described that the adjustment is made to be almost equal to the beam current density distribution in the non-area region), and it is not known how to adjust it in detail.

Therefore, the present invention has been made to solve the above problems, and according to ion implantation conditions, a method for setting an adjustment target of beam current density distribution for a plurality of ion beams, and an ion having a control device for realizing the method. The main object is to provide an injection device.

In other words, the method for setting the adjustment target of the beam current density distribution according to the present invention conveys the glass substrate in a direction substantially orthogonal to the long side direction of the ribbon-type ion beam supplied into the process chamber from each of the plurality of ion beam supply devices, In the ion implantation apparatus which overlaps the irradiation area | region by each ribbon type ion beam over the whole surface, and forms an approximately uniform ion implantation amount distribution on the said glass substrate, adjustment of the beam current density distribution with respect to each ribbon type ion beam As a method for setting a target, the adjustment target setting data is retrieved based on the ion implantation conditions set in the ion implantation apparatus, and when there is data matching the ion implantation conditions in the adjustment target setting data, The adjustment target of the beam current density distribution of one or more ribbon ion beams among the ribbon ion beams, To be set by using a value of a beam current information read out from the target set of data and characterized.

Moreover, the ion implantation apparatus which concerns on this invention conveys a glass substrate in the direction substantially orthogonal to the long side direction of the ribbon type ion beam supplied into each process chamber from each of the some ion beam supply apparatus, and over the whole surface of a glass substrate, An ion implantation apparatus in which the irradiation regions by the ribbon ion beams overlap each other to form a substantially uniform ion implantation amount distribution on the glass substrate, wherein adjustment target setting data is based on ion implantation conditions set in the ion implantation apparatus. If there is data matching the ion implantation conditions in the adjustment target setting data, the adjustment target for the beam current density distribution of one or more ribbon ion beams among the ribbon ion beams is determined. And a control device having a function of setting using the value of the beam current read from the And that is characterized.

In such a method for adjusting the beam current density distribution and the ion implantation apparatus, the target value of the beam current density distribution for each ion beam can be set depending on the ion implantation conditions set in the ion implantation apparatus. The current density distribution of each ion beam can be adjusted efficiently compared with the case where adjustment is made by setting a target value of the beam current density distribution.

In addition, it is preferable that the said search is made into the search item as ion species and energy of the ion beam irradiated to a glass substrate among ion implantation conditions.

In such a case, since the target value of the beam current density distribution for each ion beam can be set in accordance with the ion implantation conditions set in the ion implantation apparatus, when the adjustment is made by blindly setting the target value of the beam current density distribution of each ion beam. In comparison with this, the current density distribution of each ion beam can be adjusted efficiently.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows the aspect of the ion implantation apparatus which concerns on one Embodiment of this invention.
FIG. 2 is a plan view when the inside of the processing chamber shown in FIG. 1 is viewed from the Z direction.
3 is an explanatory diagram illustrating a method of adjusting a beam current density distribution according to an embodiment of the present invention.

FIG. 1 is a plan view showing an embodiment of the ion implantation apparatus 1 according to the present invention, and FIG. 2 is a plan view when the inside of the processing chamber of FIG. 1 is viewed in the Z direction. Based on these drawings, the overall configuration of an ion implantation apparatus according to an embodiment of the present invention will be described.

In this invention, X direction is made into the conveyance direction of a board | substrate, Y direction is made into the longitudinal direction of an ion beam, and Z direction is made into the advancing direction of the ion beam irradiated to a glass substrate in a process chamber. In addition, in this invention, when a ion beam is cut | disconnected in the plane orthogonal to the advancing direction of an ion beam, the ribbon type | mold refers to the ion beam whose cross section is substantially rectangular.

Below, the whole structure of the ion implantation apparatus used by this invention is demonstrated briefly.

The ion implantation apparatus 1 shown in FIG. 1 mainly includes the first chamber 11 and the first ion beam supply apparatus 2, the second ion beam supply apparatus 12, and the third ion beam supply apparatus ( 32 and the fourth ion beam supply device 42. The 1st-4th ion beam supply apparatus is an apparatus for supplying the 1st ion beam 6, the 2nd ion beam 16, the 3rd ion beam 36, and the 4th ion beam 46 into the process chamber 11, respectively.

The ion beam supply device is briefly described. The ion sources (3, 13, 33, 43), the mass spectrometry magnets (4, 14, 34, 44) and the analysis slits (5, 15, 35, 45) constituting the first to fourth ion beam supply apparatuses are respectively The supply apparatus of the same performance may be sufficient, and the supply apparatus of different performance may be sufficient. Here, the structure of the 1st ion beam supply apparatus 2 is demonstrated typically, and description about another supply apparatus is overlapped, and it abbreviate | omits.

The 1st ion beam supply apparatus 2 is equipped with the ion source 3, and the 1st ion beam 6 is taken out from this ion source 3. As shown in FIG. Various ions are mixed in the first ion beam 6 drawn out from the ion source 3. Among them, in order to irradiate only the desired ions to the glass substrate 10, the mass spectrometer magnet 4 and the analysis slit 5 are cooperated to separate desired ions and other ions. This separation is performed by adjusting the deflection amount of the first ion beam in the mass spectrometry magnet 4 so that only the desired ions can pass through the analysis slit 5 by utilizing the difference in the number of masses for each ion.

As for the 1st ion beam 6 supplied from the 1st ion beam supply apparatus 2, the beam current density distribution in a long side direction (Y direction) is measured by the beam profiler 7 provided in the process chamber 11. do. As an example of this beam profiler, it is conceivable to use a multi-point Faraday cup in which a plurality of known Faraday cups are arranged along the Y direction or a single Faraday cup that is movable along the Y direction.

In addition, although the above description demonstrated the supply apparatus of the structure provided with a mass spectrometry magnet and an analysis slit as an ion beam supply apparatus, you may not provide these.

In carrying in the glass substrate 10 to the ion implantation apparatus 1, the gate valve 20 located in the air | atmosphere side of the 1st vacuum preliminary chamber 22 is opened. Thereafter, the glass substrate 10 is carried into the first vacuum preliminary chamber 22 by a carrier robot (not shown) provided on the atmospheric side. At this time, the gate valve 18 located between the first vacuum preliminary chamber 22 and the processing chamber 11 is closed so that the processing chamber 11 side is not opened to the atmosphere.

After the glass substrate 10 is loaded into the first vacuum preliminary chamber 22, the gate valve 20 is closed, and the inside of the first vacuum preliminary chamber 22 is the same as the processing chamber 11 by a vacuum pump (not shown). The vacuum is exhausted until the degree of vacuum (pressure) is reached.

After the degree of vacuum in the first vacuum preliminary chamber 22 is about the same as the processing chamber 11, the gate valve 18 is opened. Then, the glass substrate 10 is carried into the processing chamber 11 and the first ion beam 6, the second ion beam 16, the third ion beam 36, and the fourth ion beam 46 in the direction indicated by the arrow A. It is conveyed in a process chamber so that it may cross. Thereby, the ion implantation process to the glass substrate 10 is achieved.

Thereafter, the glass substrate 10 passes through the gate valve 19 and is carried into the second vacuum preliminary chamber 23. Here, the gate valve 19 shall be opened at the appropriate timing during the ion implantation process to the glass substrate 10 in the process chamber 11, or after an ion implantation process.

After the loading of the glass substrate 10 into the second vacuum preliminary chamber 23 is completed, the gate valve 19 is closed. At this time, the gate valve 21 located in the atmospheric side of the second vacuum preliminary chamber 23 is closed. Then, after the second vacuum preliminary chamber 23 is sealed, the pressure adjustment of the second vacuum preliminary chamber 23 is performed by a vacuum pump (not shown) until the atmosphere in the room becomes about the same as atmospheric pressure.

After the room of the 2nd vacuum preliminary chamber 23 becomes atmospheric pressure, the gate valve 21 opens, and carrying out to the air | atmosphere side of the glass substrate 10 is carried out by the carrier robot (not shown) provided in the air | atmosphere side.

FIG. 2 is a plan view when the inside of the processing chamber 11 of FIG. 1 is viewed from the Z direction.

As an example of the conveyance mechanism of the glass substrate 10, as shown in FIG. 2, the wheel is provided in the lower surface of the holder 24 holding the glass substrate 10, and this wheel is a 1st, 2nd vacuum preliminary chamber. It is possible to move the holder 24 along the X direction by rolling over the unillustrated rails 22 and 23 and arranged in the processing chamber 11. In this case, a power source (motor or the like) for moving the holder 24 is prepared separately. When reciprocating conveyance between the vacuum preliminary chambers of the glass substrate 10 is considered, it is preferable to set it as the structure which can rotate positive and negative if a power source is a motor.

In the Y direction, the first to fourth ion beams have a length longer than that of the glass substrate 10. Therefore, when the glass substrate 10 is conveyed from the 1st vacuum preliminary chamber 22 to the 2nd vacuum preliminary chamber 23 in the arrow A direction shown in FIG. 2, in the whole surface of a glass substrate, each Irradiation regions by the ion beam overlap each other. In addition, the broken line surrounding each of the 1st-4th ion beam shown in FIG. 2 has shown the external shape of the supply path (beam line) for supplying an ion beam to the process chamber 11 by each ion beam supply apparatus.

In the ion implantation process, the distribution of the ion implantation amount formed on the glass substrate 10, the current density distribution of the ion beam, and the conveyance speed of the glass substrate are closely related to each other. Generally speaking, the ion implantation amount (also referred to as the dose amount) is proportional to the current density of the ion beam (sometimes referred to as the amount of current), and is inversely proportional to the speed when the object to be irradiated (here, the glass substrate) crosses the ion beam.

For example, it aims at making distribution of the ion implantation quantity formed over the whole surface of the glass substrate 10 into a substantially uniform distribution. When the conveyance speed of the glass substrate 10 is constant, when the beam current density distribution of the ion beam in the direction substantially orthogonal to the conveyance direction is made substantially uniform, the distribution of the ion implantation amount over the whole glass substrate whole surface will also become substantially uniform.

More specifically, in order to uniformly distribute the ion implantation amount over the entire surface of the glass substrate, when the glass substrate 10 moves at a constant speed along the short side direction of the ion beam in FIG. 2, the long side of the ion beam The beam current density distribution in the direction may be made substantially uniform. In this case, the beam current density distribution in the short side direction of the ion beam may not be uniform. The unevenness (nonuniformity) of the beam current density distribution in the short side direction of the ion beam which is substantially coincident with the conveyance direction of the glass substrate 10 will be integrated with conveyance of a glass substrate. Therefore, even if there are spots, a certain amount of implantation is finally made, so the uniformity of the beam current density in the short side direction of the ion beam need not be considered.

In addition, since the beam current density distribution in the both ends of the ion beam which is not irradiated on a glass substrate at the time of conveying the glass substrate 10 is not related to the injection amount distribution on a glass substrate, what kind of distribution may be sufficient as it.

In addition, in this invention, the substantially orthogonal direction mentioned above includes the direction orthogonally crossed and the direction slightly twisted in the direction. That is, even when the glass substrate is conveyed in this direction, the ion implantation treatment within the allowable range provided for the predetermined implantation distribution on the glass substrate serving as the formation target can be realized. For the same reason, the beam current density distribution in the long side direction of the ion beam may also be substantially uniform.

Next, the above-described method for adjusting the beam current density will be described.

The adjustment of the beam current density distribution in each ion beam supply apparatus increases or decreases the amount of current which flows through a filament, for example using the ion source which has a multifilament known as a well-known technique.

Specifically, the ion source of the ion beam supply device shown in FIG. 1 is a multifilament type ion source in which a plurality of filaments are arranged along the Y direction. Then, the measurement region of the ion beam in the Y direction by the beam profiler and the filaments provided in each ion source are matched.

In this case, for example, when the beam profiler is composed of 16 Faraday cups, the beam profiler is divided into four areas of four Faraday cups, and one filament (for each ion source) Means that the filaments are all four along the Y direction). The number of beam profilers and filaments exemplified herein is one example. The number may be larger than this.

3 shows the corresponding filament and Faraday cup. The vertical axis in the figure represents the beam current density, the horizontal axis is in the Y direction, the dimension between O1 and O2 coincides with the dimension of the glass substrate, and the origin 0 coincides with one end of the ion beam in the Y direction.

In adjusting the beam current density distribution, since a predetermined allowable range (2ε in FIG. 3) is provided centering on the value to be adjusted and the value, the flow rate is applied to the filament corresponding to each region so as to be settled within the allowable range. Increase or decrease the amount of current. In FIG. 3, since the beam current density in the region 1 exceeds the allowable range, the amount of current flowing to the filament in this region is reduced. On the contrary, since the beam current density in the region 3 is below the allowable range, the amount of current flowing through the filament in this region is increased. In this way, the beam current density distribution is adjusted to settle within the allowable range.

The adjustment of the current density distribution of the ion beam supplied from each ion beam supply device into the processing chamber and the setting of the adjustment target are performed in the control device 25 of FIG.

The ion implantation conditions are set by the operator of the ion implantation apparatus 1 via the user interface 26. Table 1 below illustrates ion implantation conditions. Here, ionic species represents the kind of ion irradiated to the glass substrate 10, and the dose amount represents the total (total) of the ion implantation quantity injected on the glass substrate by four ion beams. And energy represents the energy of each ion beam irradiated to the glass substrate 10. Of course, various conditions exist as an ion implantation condition, but are abbreviate | omitted here.

Ion implantation conditions set in the ion implanter
Ionic species

Dose amount (ions / cm ² )

Energy (KeV)
B +
1 x 10 ¹⁵

30

On the other hand, in the control apparatus 25, the data (henceforth called adjustment target setting data) created based on the result obtained by experiment etc. is accumulate | stored in table form. An example is shown in Table 2 regarding the contents of this data.

Adjustment goal setting data
Ionic species

Energy (KeV)
Beam current (㎂ / cm)
B +

30
100
P +

20
150 ㆍ
ㆍ
ㆍ ㆍ
ㆍ
ㆍ ㆍ
ㆍ
ㆍ
P +

50
200

The data set shown in Table 2 is, for example, a set of ion beams in which the adjustment of uniformity is completed in a short time, and a set of ion beams in which uniformity (adjustment at about 1%) with high precision is possible.

The control apparatus 25 searches whether the corresponding data exists in the data shown in this Table 2, using the value of the ion species and energy of an ion implantation condition as a search item. By searching, if the data is found, the value of the beam current corresponding thereto is read. And the adjustment target of the beam current density distribution with respect to each ion beam is set so that one or more ion beams may be irradiated on the glass substrate 10 with the value of the beam current read from the data shown in Table 2.

In the present invention, the beam current indicates a value obtained by averaging the beam current density distribution. In the averaging, a mean value may be used, or a rising average such as a square mean may be used. And in this invention, it is set as the ideal (target) that beam current density distribution in the long side direction of the ribbon type ion beam irradiated on a glass substrate will become uniform (constant) distribution. Therefore, although the unit is different, it is possible to set the value of the beam current shown in Table 2 to the value of the adjustment target of the beam current density distribution.

In addition, among the ion implantation conditions set in the ion implantation apparatus, the value of the ion species and the energy as a search item empirically shows that these parameters affect the adjustment accuracy and the adjustment time in adjusting the beam current density distribution. Because I know. On the other hand, this is because the same value is taken for each ion beam. That is, when the ion implantation conditions of Table 1 are set in the ion implantation apparatus 1 of FIG. 1, the ion species and energy values of the first to fourth ion beams are the same as those set as the implantation conditions. Since the value is achieved by overlapping the ion beams, the value set in each ion beam does not necessarily take the same value. In the present invention, ionic species and energy, which are items that are necessarily the same value in each ion beam, are used as search items. Therefore, the effect that the structure of the adjustment target setting data (Table 2) can be simplified can be simplified, and further, the data retrieval processing can be completed quickly.

In FIG. 1, the conveyance speed of the glass substrate 10 at the time of crossing each ion beam is constant. The sum of the beam current density distributions of the ion beams from the relationship between the dose amount distribution (here, a constant value is set because it is a uniform distribution on the entire surface of the glass substrate) as the ion implantation condition and the conveyance speed of the glass substrate 10 ( Total) is calculated. In addition, the sum total here means the distribution which summed the beam current density distribution in the long side direction of the 1st-4th ion beam irradiated on a glass substrate, and since it is an ideal distribution, it becomes a fixed value ideally.

And from the value of the beam total density distribution of the sum total derived, the adjustment target of the beam current density distribution of the four ion beams using the value of the beam current read from the adjustment target setting data which some ion beams are shown in Table 2 Find if it can be set. This calculation is, for example, by the value of the beam current reading out the value of the beam current density distribution of the sum _total from I, Table 2 with I _x, is noted in the whole part to be calculated in the following equation (1). In Formula (1), X1 described on the right side represents an integer, and X2 represents less than or equal to the decimal point. In this calculation, attention is paid to values such as the numerical value of the beam current density distribution, the numerical value of the beam current, and the like, and the unit is not considered. The same applies to the equations 2 to 6 described later.

If this is the integral part (X1) it is 2, if, setting of the four ion beam, a target adjustment of the current density distribution of the ion beam 2 to I _x. In this setting, it is assumed that which ion beam adjustment target is set in accordance with a predetermined priority. For the remaining two ion beams, the adjustment target of the beam current density distribution of each ion beam is set according to the following equation (2).

Here, among the four ribbon ion beams, the adjustment target of the beam current density distribution is set for the two ion beams based on the value of the beam current read from the adjustment target setting data, so that the time required for uniform adjustment can be shortened. It can exert such an effect. As a result, the adjustment efficiency when adjusting the beam current density distribution for all four ion beams can be improved. On the other hand, when one or more ribbon type ion beams are set in this manner, the beam current density distribution can be efficiently adjusted as compared with the case where the adjustment target is blindly set.

In the example of Equation 2, when setting the adjustment target of the beam current density distribution of the remaining two ribbon ion beams, the value of the beam current density distribution (molecule of Equation 2) to be achieved in the remaining ribbon ion beams is equally divided. By doing so, the adjustment target value for each ribbon-type ion beam is derived, but this is a method for simply setting the adjustment target for the remaining ion beams, and it is not necessary to use such a method. If not equal, for example, the distribution ratio of the molecules of the formula (2) may be changed according to the capability (performance) of the supply device for supplying each ribbon ion beam.

In addition, when the integer part X1 shown by Formula 1 exceeds the number of ion beams (four in the example of FIG. 1) as an object (for example, when X1 = 5), three of four ion beams For the ion beam, the adjustment target is set so that the beam current density distribution becomes I _x , and the adjustment target for the other one is set based on the calculation result in the following equation (3).

On the other hand, when the result calculated by the formula (1) falls exactly and the integer part X1 is equal to the number of ion beams to be targeted, the adjustment target of the current density distribution of all the ion beams is set to be I _x .

On the other hand, when the result computed by Formula (1) falls exactly and the integer part X1 is smaller than the number of ion beams made into object, it is prevented from irradiating a glass substrate with a part of ion beams. Specifically, when the total number of ion beams is four and X1 is 3, the adjustment target of the beam current density distribution of the three ion beams is set to I _x , and the remaining one ion beam is not used. That is, the supply of the ion beam from one ion beam supply device is stopped.

As a result of searching Table 2, when there is no corresponding data, the adjustment target of the beam current density distribution for each ion beam is set to the value of the beam current density distribution obtained by dividing I _total by the total number of ion beams. In equation (1), the adjustment target is set in the same manner even when there is no integer portion X1 (when I _x is larger than I _total ).

In this way, when the adjustment target of the beam current density distribution for each ion beam is set, the control device 25 monitors the beam current density distribution with a beam profiler corresponding to each ion beam, and controls the ion source of each ion beam supply device. The amount of current flowing through the provided filament is adjusted or adjusted so that the beam current density distribution of each ion beam falls within the allowable range.

Adjustment of the beam current density distribution with respect to each ion beam supply apparatus may be performed in a predetermined order. In addition, the control apparatus 25 may be made into the structure which multitask process is possible, and may adjust the beam current density distribution in all the ion beam supply apparatuses simultaneously.

The method of setting the above-described adjustment target assumes a case where the glass substrate 10 is conveyed in only one direction from the first vacuum preliminary chamber 22 to the second vacuum preliminary chamber 23. On the other hand, a glass substrate may be reciprocally conveyed. When this is considered, two things shown below can be considered.

One sets the adjustment target of the beam current density distribution of each ion beam by the method demonstrated so far. And the conveyance speed of a glass substrate is made quick in accordance with the conveyance frequency which the glass substrate crosses all the ion beams irradiated between the 1st vacuum preliminary chamber 22 and the 2nd vacuum preliminary chamber 23. For example, if the number of times of conveyance of the glass substrate which passes all the ion beams is increased 4 times, and the beam current density distribution of each ion beam is not changed, the injection amount of the ion injected into a glass substrate will increase by that much. Therefore, as the number of times of conveyance of the glass substrate which passes all the ion beams increased 4 times, the method of making the conveyance speed of a glass substrate 4 times speed and making a fluctuation | variation in the injection amount distribution formed on a glass substrate can be considered.

Another is a method of changing the adjustment target set for each ion beam according to the number of times the glass substrate crosses all the ion beams without changing the conveyance speed of the glass substrate.

The frequency | count of conveyance which a glass substrate crosses all the ion beams irradiated between the 1st vacuum preliminary chamber 22 and the 2nd vacuum preliminary chamber 23 is set to n. For example, a glass substrate is carried in from the 1st vacuum preliminary chamber 22, and is conveyed toward the 2nd vacuum preliminary chamber 23. As shown in FIG. And after traversing all the ion beams (1st-4th ion beam in the example of FIG. 1), a conveyance direction is reversed and it conveys toward the 1st vacuum preliminary chamber 22. As shown in FIG. Then, after all the ion beams have crossed the glass substrate, the conveyance direction is reversed again, conveyed toward the 2nd vacuum preliminary chamber 23, and it is carried out from the 2nd vacuum preliminary chamber 23, n is 3 do. As in the above formulas, I _total represents the numerical value of the total beam current density distribution, and I _x represents the numerical value of the beam current shown in Table 2. And a is the number of all ion beams to be adjusted, and b is the number of ion beams whose adjustment target of the beam current density distribution is set to I _x .

In this case, b is an integer part calculated by Equation 4 in the same manner as in Equation 1.

If there is no integer portion X1 in Equation 4, or if there is no corresponding data in Table 2, I _total is divided by n × a, and the value obtained thereby is divided by the beam current density distribution for each ion beam. You can set the target of adjustment. In addition, X1 is a smaller than the number a, also in the case where X2 is zero, the ion beam for setting the adjustment target of the beam current density distribution on X1 of the ion beam to I _x and the other ion beams (a-X1 of the ion beam) The supply from the ion beam supply apparatus to supply is stopped.

In addition, when the value of b exceeds the number of ion beams to be adjusted as a result of the calculation in the equation (4), the same expression as in the case of the equation (3) is treated. That is, the adjustment target of the a-1 ion beams is set to I _x , and the adjustment target of the remaining one ion beam is set to a value calculated by the following equation (5).

In the case other than the above, after calculating b by the equation (4), the adjustment target of the beam current density distribution for the remaining ion beam (the ion beam whose adjustment target is not I _x ) is calculated based on the equation shown in the following equation (6). do.

In Equation 6, the adjustment target of the beam current density distribution for each ion beam is calculated by dividing the total of the beam current density distributions of the remaining ion beams by the number and n of the remaining ion beams. However, it is not necessary to calculate the adjustment targets for the remaining ion beams in equal parts by the equation (6), and the ratio of the adjustment targets of the beam current density distribution set for each ion beam according to the performance of each ion beam supply device. May be determined.

In addition, the embodiment according to the present invention described above was an ion implantation apparatus in which each ion beam is irradiated to the entire surface of the glass substrate using four ion beams, but each of the two or more ion beams is irradiated to the entire surface of the glass substrate. The present invention can be applied as long as it is an ion implantation device having the above configuration. In addition, the process chamber 11 shown in FIG. 1 may be provided in multiple numbers for every ion beam supply apparatus. In that case, you may make it partition between each process chamber by the gate valve.

As the means for adjusting the beam current density distribution, instead of the ion source having the multifilament described in the above embodiments, conventionally used electric field lenses and magnetic field lenses are arranged in the beam lines of the respective ion beam supply apparatuses. The beam current density distribution may be adjusted.

The control device 25 may be provided separately from the ion implantation device 1.

In addition to the above, various improvements and modifications may be made without departing from the scope of the present invention.

DESCRIPTION OF REFERENCE NUMERALS 1 ion implantation device 6 first ion beam
10 glass substrate 16 second ion beam
25 control device 26 user interface
36: third ion beam 46: fourth ion beam

Claims (4)

A glass substrate is conveyed in the direction orthogonal to the long side direction of the ribbon type ion beam supplied into the process chamber from each of the plurality of N ion beam supply devices, and the irradiation area by each ribbon type ion beam is spread over the entire surface of the glass substrate. In the ion implantation apparatus which overlaps each other and forms uniform ion implantation amount distribution on the said glass substrate, As a method of setting the adjustment target of the beam current density distribution with respect to each ribbon type ion beam,
Based on the ion implantation conditions set in the ion implantation apparatus, the adjustment target setting data is retrieved, and when there is data matching the ion implantation conditions in the adjustment target setting data, one or more ribbons of each of the ribbon-type ion beams The adjustment target of the beam current density distribution of the type ion beam is set using the value (I _X ) of the beam current read from the adjustment target setting data,
By using the value of the total beam current density distribution (I _Total ) and the value of the beam current (I _X ), the ion beam current of several ion beam supply devices among the plurality of (N) ion beam supply devices is the value of the beam current. (I _X ) can be set by the value of X1 of Equation A, and the ion beam current set value (I _Y ) of the remaining ion beam supply device is obtained by Equation B.
[Formula A]

(X1: integer part, X2: fractional part)
[Formula B]

The method according to claim 1, wherein the retrieval is performed using ion species and energy of an ion beam irradiated onto the glass substrate as retrieval items. A glass substrate is conveyed in the direction orthogonal to the long side direction of the ribbon type ion beam supplied into the process chamber from each of the plurality of N ion beam supply devices, and the irradiation area by each ribbon type ion beam is spread over the entire surface of the glass substrate. An ion implantation apparatus overlapping each other to form a uniform ion implantation amount distribution on the glass substrate,
Based on the ion implantation conditions set in the ion implantation apparatus, the adjustment target setting data is retrieved, and when there is data matching the ion implantation conditions in the adjustment target setting data, one or more ribbons of each of the ribbon-type ion beams The adjustment target of the beam current density distribution of the type ion beam is set using the value of the beam current read from the adjustment target setting data,
By using the value of the total beam current density distribution (I _Total ) and the value of the beam current (I _X ), the ion beam current of several ion beam supply devices among the plurality of (N) ion beam supply devices is the value of the beam current. Can be set to (I _X ), and the ion beam current setting value (I _Y ) of the remaining ion beam supply device is obtained from equation B.
An ion implantation device comprising a control device having a function.
[Formula A]

(X1: integer part, X2: fractional part)
[Formula B]

The ion implantation apparatus according to claim 3, wherein the search is performed using ion species and energy of an ion beam irradiated to the glass substrate as search items.

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