KR20140061233A - Ion implanting device and ion implanting method - Google Patents

Abstract

An ion implantation apparatus which helps to improve productivity and an ion implantation method are provided. The ion implantation apparatus (10) comprises an ion source (18) having a withdrawal electrode system (24) for withdrawing a ribbon beam (12) and a process chamber (26) for receiving the ribbon beam (12) from the ion source (18). The process chamber (26) is configured to pass an ion beam irradiation region (14) through a substrate (S). The ribbon beam (12) is determined according to ion beam generation conditions of the ion source (18). The ribbon beam (12) maintains beam characteristics from the withdrawal electrode system (24) to the ion beam irradiation region (14) while the ion beam irradiation region (14) passes through the substrate (S) to directly irradiate the ion beam irradiation region (14) to the moving substrate (S).

Description

TECHNICAL FIELD [0001] The present invention relates to an ion implantation apparatus and an ion implantation method,

The present application claims priority based on Japanese Patent Application No. 2012-249537 filed on November 13, 2012. The entire contents of which are incorporated herein by reference.

The present invention relates to ion implantation, and more particularly, to an ion implantation apparatus and an ion implantation method.

A beamline ion implantation apparatus for manufacturing a solar cell is known (see, for example, Patent Documents 1 and 2). In this apparatus, an ion beam extracted from an ion source is transferred to an end station via a beam line having a mass analyzer, a decomposition aperture, and an angle correction magnet. Unwanted ion species do not pass through the decomposition aperture, but are blocked by the masking electrode.

Japanese Patent Publication No. 2011-513997 U.S. Patent Application Publication No. 2010/0197126

In principle, there are processes that do not have ion implantation for economical reasons, even though they are processes that can be used for ion implantation. Since the conventional ion implantation apparatus is relatively expensive, in this process, ion implantation is not suitable for the production cost required for the device produced by the process.

Representative examples of such processes include several processes for manufacturing solar cell substrates. By applying ion implantation to these processes, it is possible to precisely control the dose amount of the impurity implanted into the solar cell substrate and the distribution in the depth direction. As a result, the performance of the solar cell is expected to be improved. However, the ion beam current for implantation has not reached the required level. Due to this, the ion implantation does not give sufficient productivity to the production of the solar cell substrate.

One of the exemplary objects of one aspect of the present invention is to provide an ion implantation apparatus and ion implantation method for imparting a high beam current for improving the productivity of several processes.

According to an aspect of the present invention, there is provided a plasma processing apparatus comprising: a plasma source; an ion source including a plasma source for generating plasma in the plasma chamber; and an extraction electrode system for extracting an ion beam having a long- And a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiation area, the processing chamber having a processing chamber provided adjacent to the ion source and receiving the ion beam from the drawing electrode system, Wherein the ion beam has a beam current determined in accordance with the ion beam generating condition and the ion beam is irradiated onto the substrate moving from the drawing electrode system through the ion beam irradiation region to the beam current And the ion beam is irradiated directly.

According to another aspect of the present invention, there is provided a method for controlling an ion beam, comprising: controlling an ion beam generating condition of an ion source; drawing out an ion beam through an extraction electrode system of the ion source; accepting the ion beam from the ion source into the processing chamber; Wherein the ion beam has a beam current determined according to the ion beam generating condition and the ion beam is irradiated from the drawing electrode system to the substrate being moved through the ion beam irradiation region , And the beam current is maintained and directly irradiated.

According to another aspect of the present invention, there is provided a plasma processing apparatus comprising: an ion source having an extraction electrode system for extracting an ion beam; and a processing chamber for receiving the ion beam from the ion source, Wherein the ion beam has a characteristic determined according to an ion beam generating condition of the ion source and maintains the characteristic from the drawing electrode system to the ion beam irradiation region while the substrate passes through the ion beam irradiation region, And the ion beam irradiation region is irradiated directly onto the moving substrate.

According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: extracting an ion beam through an extraction electrode system of an ion source; receiving the ion beam from the ion source into a processing chamber; Wherein the ion beam has a characteristic determined according to an ion beam generating condition of the ion source and maintains the characteristic from the drawing electrode system to the ion beam irradiation region while the substrate passes through the ion beam irradiation region, And the irradiation region is directly irradiated onto the moving substrate.

However, it is also effective as an aspect of the present invention that any combination of the above-described elements or the elements or expressions of the present invention are replaced with each other among methods, apparatuses, systems, programs, and the like.

According to the present invention, it is possible to provide an ion implantation apparatus and an ion implantation method that can improve productivity.

BRIEF DESCRIPTION OF DRAWINGS FIG. 1 schematically shows an ion implanting apparatus according to an embodiment of the present invention; FIG.
2 is a perspective view schematically showing a part of an ion implanting apparatus according to one embodiment of the present invention.
Fig. 3 is a view schematically showing a drawing electrode system of an ion implantation apparatus according to an embodiment of the present invention. Fig.
4 is a plan view schematically showing a beam measuring system of an ion implantation apparatus according to an embodiment of the present invention.
5 is a diagram showing an injection profile obtained by an ion implantation apparatus according to an embodiment of the present invention.
6 is a plan view schematically showing an in-line type vacuum chamber system for an ion implantation apparatus according to an embodiment of the present invention.
7 is a flowchart showing an ion implantation method according to one embodiment of the present invention.

Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the description of the drawings, the same elements are denoted by the same reference numerals and redundant explanations are appropriately omitted. The configuration described below is an example and does not limit the scope of the present invention at all.

The ion implantation apparatus according to one embodiment of the present invention is configured to control the characteristics of the ion beam in the ion implantation step with respect to the substrate in the ion beam generation step. The generation step of the ion beam refers to the period from the generation of plasma which is the supply source of ions to the extraction of ions. The ion beam is generated by the extraction of the ions. The drawn ions are injected into the substrate.

In this way, the ion beam having the controlled beam characteristic is directly irradiated to the substrate. Since the beam line from ion extraction to ion implantation can be made very short, loss of ions during transportation can be minimized. Therefore, ions can be injected into the substrate with the high beam current at the time of withdrawal, so that an ion implantation apparatus having high productivity can be provided.

1 schematically shows an ion implantation apparatus 10 according to an embodiment of the present invention. 1 is a side view of the ion implantation apparatus 10. Fig. 2 is a perspective view schematically showing a part of the ion implantation apparatus 10 according to one embodiment of the present invention. Fig. 2 shows a cross-sectional view of a part of the ion implantation apparatus 10 by a plane parallel to the drawing in Fig. In Fig. 2, the cross-sectional area is indicated by an oblique line.

The ion implantation apparatus 10 is configured to irradiate the substrate S with the ion beam 12. [ The ion beam 12 has a long beam cross-section extending in the longitudinal direction (direction perpendicular to the drawing in Fig. 1). Hereinafter, the ion beam 12 may be referred to as a ribbon beam 12 in some cases. The ribbon beam 12 forms an ion beam irradiation region (hereinafter also referred to as an ion beam region) 14 corresponding to the cross section in the process chamber 26. The ion beam region 14 is located at a specific portion on the surface of the substrate S at a specific point in time. In order to facilitate understanding, the ion beam region 14 is indicated by fine dots in Fig. In the process chamber 26, the substrate S passes through the ion beam region 14 along the substrate moving path A. In this manner, ion implantation can be performed over a wide range of the surface of the substrate S.

In this embodiment, the substrate S is a substrate for a solar cell or a solar cell. Therefore, the ion implantation apparatus 10 is used for manufacturing a solar cell substrate. The substrate S is a semiconductor member having a flat plate shape in most cases, but the substrate S may be a product having any other shape and material. The substrate S may be a single large substrate or a plurality of small substrates. When the substrate S represents a plurality of substrates, the substrate S may include a container such as a tray for arranging these substrates in a plane (for example, in a matrix form). The tray may be configured to be capable of performing, for example, injection processing of four rows or more on a substrate of a matrix arrangement at the same time. Further, the substrate S may be covered with a mask. For convenience of explanation, such a substrate, a container, a mask, and other objects to be processed are collectively referred to as a substrate S in some cases.

As shown in Figure 1, the ion implanter 10 includes an ion source 18 configured to generate a ribbon beam 12. The ion source 18 imparts the ribbon beam 12 to the central chamber 16. The ion source 18 includes a plasma chamber 20 and a plasma source 22 for generating a plasma 21 in the plasma chamber 20 and a plasma source 22 for drawing the ribbon beam 12 from the plasma chamber 20 And an extraction electrode system (24). The ion implantation apparatus 10 also includes a vacuum evacuation system (not shown) for providing a desired vacuum environment to the ion source 18 and the central chamber 16.

The ion implantation apparatus 10 has a central chamber 16. The central chamber 16 is connected to the ion source 18 to receive the ribbon beam 12 from the ion source 18. The central chamber 16 has a process chamber 26 for ion implantation processing of the substrate S using the ribbon beam 12. The central chamber 16 also has an upstream buffer chamber 28 and a downstream buffer chamber 30 connected to the process chamber 26. In order to avoid unnecessarily complicating the drawings, the central chamber 16 is not shown in Fig.

The central chamber 16 has a substrate moving mechanism (see FIG. 6) for moving the substrate S along the substrate moving path A. The substrate moving path A is a linear path extending in a direction perpendicular to the longitudinal direction of the ribbon beam 12 and passes through the upstream buffer chamber 28, the process chamber 26, and the downstream buffer chamber 30 . The substrate moving path A passes through the ion beam region 14 in the process chamber 26. The substrate moving mechanism is configured to continuously move the substrate S along the substrate moving path A. The substrate moving mechanism can move the substrate S at a substantially constant speed. The construction of such an in-line vacuum chamber will be described later in detail with reference to Fig.

The process chamber 26 is provided adjacent to the ion source 18. The process chamber 26 receives the ribbon beam 12 from the ion source 18 (more precisely, the extraction electrode system 24). Thus, the process chamber 26 has an ion beam region 14 therein. From the ion beam region 14 of the process chamber 26, the drawing electrode system 24 is exposed.

The ion implantation apparatus 10 is provided with a control section 32 for controlling the ion implantation apparatus 10. In particular, the control unit 32 is provided to control the ion beam generating condition of the ion source 18. [ The ion beam generation conditions include, for example, the ion beam control conditions of the extraction electrode system 24 and / or the plasma control conditions of the plasma source 22. The ion beam control condition includes the ion beam extraction condition of the extraction electrode system 24. The ion beam extraction condition includes, for example, the extraction voltage of the extraction electrode system 24. The ion beam control conditions may include plasma control conditions. Therefore, the control unit 32 is configured to control at least one of the plasma source 22 and the extraction electrode system 24. [ The control unit 32 may be configured to control the entire ion implantation apparatus 10 including the ion source 18 and the substrate moving mechanism.

The ribbon beam 12 has a beam characteristic determined according to an ion beam generating condition. This beam characteristic includes, for example, the beam current of the ribbon beam 12, the ion composition of the ribbon beam 12, and / or the uniformity in the cross section of the ribbon beam 12. Since the process chamber 26 is adjacent to the ion source 18, the ribbon beam 12 is irradiated directly from the extraction electrode system 24 to the ion beam region 14. [ The characteristic of the ribbon beam 12 has already been determined in the step of drawing through the drawing electrode system 24 and the beam characteristic in the beam transporting space from the drawing electrode system 24 to the process chamber 26 is maintain. Therefore, the ion implantation characteristics (for example, implant dose, implantation energy, and / or implantation profile) obtained on the substrate S are determined in accordance with the ion beam generating conditions of the ion source 18. [

Therefore, the control unit 32 controls the ion beam generation conditions (for example, based on a given implantation dose) and the given substrate transfer speed on the substrate S The ion beam extraction condition is changed to adjust the beam current of the ribbon beam 12). In one embodiment, the control unit 32 controls the ion composition of the ion beam 12 by changing the plasma control condition of the plasma source 22. For example, the ratio of the monomer ion and the dimer ion of the ion species to be injected into the substrate S is controlled. In this way, the injected dopant current can be controlled.

The ion implantation apparatus 10 has a beam guide 34 for connecting the ion source 18 to the process chamber 26. Thus, the process chamber 26 is adjacent to the ion source 18 through the beam guide 34. The beam guide 34 is a tubular member that surrounds the ribbon beam 12 and provides a vacuum environment for transporting the ribbon beam 12 between the ion source 18 and the process chamber 26. The inner wall surface of the beam guide 34 is separated from the outer peripheral portion of the ribbon beam 12 so as not to interfere with the ribbon beam 12. [ (For example, a graphite liner) may be mounted on the inner wall surface of the beam guide 34 to prevent particles.

2, the ion implanter 10 is provided with a high voltage insulator 48 mounted between the plasma chamber 20 and the beam guide 34. The high voltage insulator 48, The high voltage insulator 48 insulates the beam guide 34 from the plasma chamber 20. Thus, the process chamber 26 is also isolated from the plasma chamber 20. The high voltage insulator 48 is provided so as to surround the drawing electrode system 24.

In this manner, the ion implantation apparatus 10 has a straight beam line. This linear beam line intervenes between the ion source 18 and the process chamber 26 so as to transport the ion beam 12 drawn out by the drawing electrode system 24 directly to the process chamber 26. The beamline is very short and does not have a beamline component that acts on the beam characteristics (e.g., beam current) of the ion beam 12. For example, the ion implantation apparatus 10 does not have a mass analyzer, unlike a general apparatus. Thus, the ion beam 12 is directly irradiated onto the substrate S. Since the ion implantation apparatus 10 has such a simple beam line configuration, its manufacturing cost can be reduced.

The ion source 18 will be further described with reference to Figs. 1 and 2. Fig. The plasma chamber 20 provides space for holding and accommodating the generated plasma 21. The plasma chamber 20 has a magnet (not shown) for confining the plasma 21 at or near the wall. The plasma accommodating space has, for example, a rectangular parallelepiped shape, and a plasma source 22 is provided on the upper side thereof, and a drawing electrode system 24 is provided on the lower side.

As shown in Fig. 2, the plasma chamber 20 has a plurality of exit openings 50 for taking out the plasma 21 to the outside. The exit opening 50 is formed in relation to the drawing electrode system 24. In this way, the plasma source 22 is opposed to the extraction electrode system 24 and the exit opening 50.

The plurality of exit openings 50 are formed adjacent to each other and each have a long shape extending in a direction perpendicular to the substrate moving path A. The plurality of exit openings (50) are arranged at equal intervals in parallel with each other. The plasma chamber 20 may be provided with a beam shutter (not shown) for opening and closing a part or all of the plurality of exit openings 50. It is possible to draw out the ion beam 12 from the plasma chamber 20 when the beam shutter is opened and when the beam shutter is closed, the drawing out of the ion beam 12 is physically cut off, and the amount of the ion beam can be reduced.

Returning to Fig. The plasma source 22 has a gas supply source 36 for supplying a source gas to the plasma chamber 20. The source gas contains the desired ion species to be injected into the substrate S. For example, in the case of (P) being the ion species to be injected into the substrate S, the source gas is, for example, PH ₃ diluted with H ₂ . When the ionic species to be implanted into the substrate S is boron (B), the source gas is, for example, B ₂ H ₆ diluted with H ₂ . In addition, for hydrogen passivation of the substrate S, the source gas may be H ₂ . The source gas may include any diluent gas different from H ₂ , an assist gas for improving the plasma ignition property, and / or other rare gas, if necessary.

The gas supply source 36 is connected to the plasma chamber 20 through the gas piping 38. The source gas is supplied to the plasma chamber 20 through the gas piping 38. (For example, a mass flow controller) may be provided in the gas supply source 36 and / or the gas piping 38 in order to adjust the concentration and / or the flow rate of the source gas introduced into the plasma chamber 20 .

The plasma source 22 includes a high frequency plasma excitation source, for example, an RF antenna 40, for generating a plasma 21 from the source gas in the process chamber 26. The plasma source 22 includes an RF matching box 42 and an RF power source 44 for feeding power to the RF antenna 40. The RF antenna 40 is installed in the plasma chamber 20 and the RF matching box 42 and the RF power source 44 are installed outside the plasma chamber 20. The RF matching box 42 is mounted on the outside of the plasma chamber 20. Thus, the ion source 18 is configured as an ion source of the RF plasma excitation type.

As shown in FIG. 2, the plasma source 22 includes a plurality of RF antennas 40 and a plurality of RF matching boxes 42. The RF matching box 42 is provided for each RF antenna 40. A plurality of RF antennas 40 are arranged along the exit opening 50 of the plasma chamber 20. Thereby, a long plasma 21 can be generated in the plasma chamber 20 along the exit opening 50. Thus, the ion source 18 is a bucket type ion source.

As shown in FIG. 1, the plasma source 22 has a source box 46. The source box 46 receives a gas source 36 and an RF power source 44. A voltage corresponding to a desired implantation energy is applied to the plasma chamber 20 and the source box 46 by, for example, a power supply device 70 (see FIG. 3) described later. Therefore, a voltage corresponding to the desired implantation energy can be applied to the exit opening 50 of the plasma chamber 20. [

The control unit 32 controls the plasma source 22 in accordance with the plasma control condition. Thereby, the source gas is supplied from the gas supply source 36 to the plasma chamber 20, and power is supplied from the RF power supply 44 to the RF antenna 40. As a result, the plasma 21 containing the desired ion species is excited into the plasma chamber 20.

The plasma control condition includes one or a plurality of plasma control parameters for controlling the plasma 21. The plasma control parameters include, for example, the concentration of the source gas (for example, the hydrogen dilution rate), the flow rate of the source gas, the total RF power of the ion source 18, the RF power of each RF antenna 40, 40, and the applied voltage corresponding to the desired implantation energy, but are not limited thereto. By adjusting or changing the plasma control parameter, the plasma 21 can be controlled. By controlling the plasma 21, for example, the beam current of the ribbon beam 12 can be adjusted to some extent.

Alternatively, the ratio of the monomer ions and the dimer ions in the plasma 21 can be controlled by adjusting the concentration, the flow rate, and the RF power of the source gas introduced into the plasma chamber 20. When the dopant is phosphorus, the ratio of the monomer ion PH _x ⁺ to the dimer ion P ₂ H _x ⁺ can be controlled. Similarly, when the dopant is boron, the ratio between the monomer ion BH _x ⁺ and the dimer ion B ₂ H _x ⁺ can be controlled. Thus, the control section 32 can control the injection dopant current and / or the injection profile of the substrate S by changing plasma control conditions.

3 schematically shows a drawing electrode system 24 of the ion implantation apparatus 10 according to one embodiment of the present invention. The drawing electrode system 24 includes a plasma electrode 52 and a drawing acceleration electrode unit 54. The above-described plurality of outlet openings 50 are formed in the plasma electrode 52. The plasma electrode 52 is a bottom plate that separates the inside of the plasma chamber 20 from the outside. The extraction acceleration electrode unit 54 includes an extraction electrode 56, a suppression electrode 58, and a ground electrode 60. Therefore, the drawing electrode system 24 has four electrodes.

The four electrodes of the extraction electrode system 24, that is, the plasma electrode 52, the extraction electrode 56, the suppression electrode 58, and the ground electrode 60 are connected to the process chamber 26 In the order described. These electrodes are each a flat plate on which slits are mounted, and are arranged in parallel with each other. The gap between the plasma electrode 52 and the withdrawing electrode 56 is narrower than the spacing between the withdrawing electrode 56 and the suppression electrode 58. [ The interval between the extraction electrode 56 and the suppression electrode 58 is wider than the interval between the suppression electrode 58 and the ground electrode 60.

The extraction electrode system 24 has a plurality of slits corresponding to the plurality of outlet openings 50 of the plasma electrode 52. That is, the lead electrode 56, the suppression electrode 58, and the ground electrode 60 are formed in the same shape and arrangement as the plurality of the exit openings 50 of the plasma electrode 52, 62, a plurality of third slits 64, and a plurality of fourth slits 66. Therefore, a plurality of elongated openings adjacent to each other are formed on each electrode of the drawing acceleration electrode section 54. [ These elongated openings are formed along a direction perpendicular to the substrate moving path A. [ The exit opening 50 of the plasma electrode 52 may be referred to as a first slit of the drawing electrode system 24. [

The first through fourth slits provide a linear slit path for the ion beam extracted from the plasma chamber 20. [ The long ion beam 68 is drawn out through the individual slit paths. By the plurality of long ion beams 68 corresponding to the plurality of slit paths, the ribbon beam 12 is formed. By forming a plurality of slit paths along the substrate moving path A in this way, a wide ribbon beam 12 (i.e., a wide ion beam region 14) can be obtained. This slit configuration helps to maximize the size of the ribbon beam 12. The drawing electrode system 24 is designed to draw the ribbon beam 12 having uniformity in the longitudinal direction of the ribbon beam 12 (at least over the width of the substrate S).

The drawing electrode system 24 is provided with a power supply device 70 for applying a voltage to each electrode. The power supply device 70 is configured to supply the drawing power source 72, the acceleration power source 74, and the suppression power source 76 with respect to the plasma electrode 52, the extraction electrode 56 and the suppression electrode 58 Respectively. These power sources are voltage-variable direct-current power sources, and are controlled by the control unit 32.

The drawing power supply 72 is connected between the plasma electrode 52 and the drawing electrode 56 so as to apply a positive drawing voltage Vex to the plasma electrode 52. [ The acceleration power source 74 is connected between the lead electrode 56 and the ground electrode 60 so as to apply a positive acceleration voltage to the lead electrode 56. [ The suppression power supply 76 is connected between the suppression electrode 58 and the ground electrode 60 so as to apply a negative suppression voltage to the suppression electrode 58. [ The ground electrode 60 is grounded.

The control unit 32 controls the extraction electrode system 24 in accordance with the ion beam extraction condition. When the power source device 70 applies a voltage to the extraction electrode system 24 in accordance with the extraction conditions, the ribbon beam 12 is continuously drawn out from the plasma chamber 20 through the extraction electrode system 24. The drawn ribbon beam 12 passes through the beam guide 34 and enters the process chamber 26 as it is.

Therefore, the ion composition of the ribbon beam 12 drawn by the drawing electrode system 24 is derived from the plasma 21. Since the plasma 21 includes the monomer ions and the dimer ions of the dopant injected into the substrate S as described above, the ribbon beam 12 also contains monomer ions and dimer ions. Since the ribbon beam 12 is incident on the process chamber 26 without passing through the mass analyzer, the ion beam region 14 is allowed to receive both monomer ions and dimer ions.

The ion beam extraction condition includes one or a plurality of extraction control parameters for controlling the extraction electrode system 24. The shape of the exit electrode 50 and the distance between the plasma electrode 52 and the lead electrode 56 and the distance between the plasma electrode 52 and the lead electrode 56 ), And are not limited to these. By controlling or changing the drawing control parameter, the ribbon beam 12 can be controlled.

For example, the control section 32 may control the outgoing beam current by changing the outgoing voltage Vex and / or the suppression voltage so as to keep the injection energy constant. Alternatively, the control unit 32 may control the outgoing beam current by adjusting the shape of the exit opening 50. For this reason, the plasma electrode 52 may have a variable exit opening.

The control unit 32 may control the outgoing beam current by changing the position and / or shape of at least one of the outgoing electrode systems 24. [ For this reason, for example, an actuator for adjusting the interval between the plasma electrode 52 and the extraction electrode 56 may be provided on the plasma electrode 52 and / or the extraction electrode 56. An actuator for moving and / or deforming the plasma electrode 52 and / or the lead electrode 56 may be provided in order to adjust the beam longitudinal direction distribution of the distance between the plasma electrode 52 and the lead electrode 56 .

4 is a plan view schematically showing a beam measuring system 78 of the ion implantation apparatus 10 according to one embodiment of the present invention. The beam measuring system 78 will be described with reference to Figs. 1 and 4. Fig.

However, unlike FIG. 1, the positional relationship between the substrate S and the ribbon beam 12 shown in FIG. 4 is a state before ion implantation. The substrate S is moving toward the ribbon beam 12 at the substrate scanning speed Vs. The substrate S is not overlapped with the ribbon beam 12, and ion implantation is not yet started. Here, the substrate S may be a plurality of substrates and a tray on which these substrates are placed. In Fig. 4, there is shown a tray that enables the arrangement of a matrix-like substrate of 7 rows and 5 columns. The ribbon beams 12 are simultaneously irradiated to the five rows of the substrates.

As shown in FIG. 1, the beam measuring system 78 is accommodated in the measuring chamber 80. The measurement chamber 80 is located below the process chamber 26. That is, the measurement chamber 80 and the ion source 18 are opposite to each other with respect to the process chamber 26. The measurement chamber 80 is configured to receive the ribbon beam 12 from the ion source 18 through the process chamber 26. Therefore, the beam measuring system 78 is located on the downstream side of the beam path with respect to the substrate S.

The beam meter 78 is configured to measure the characteristics of the ribbon beam 12. The beam meter 78 includes a scan Faraday 82, a fixed Faraday 84, and a mass analyzer 86. The scan faraday 82, the fixed faraday 84 and the mass spectrometer 86 are arranged in the order described in the transport direction of the ribbon beam 12. Thus, the mass analyzer 86 is located at the end of the beam path.

The scan Faraday 82, the fixed Faraday 84, and the mass spectrometer 86 may respectively output measurement results to the control unit 32. [ The scan Faraday 82 and / or the fixed Faraday 84 are configured to measure the injection beam current prior to and / or during implantation of the substrate S.

The scan Faraday 82 is a fast moving profile monitor that moves in the longitudinal direction of the ribbon beam 12. The scan faraday 82 is a movable beam current meter, for example, a Faraday cup. The scan faraday 82 is provided to measure the uniformity of the beam current in the longitudinal direction of the ribbon beam 12. [ The scan faraday 82 measures the beam intensity of the ribbon beam 12 while scanning the movable range C including the width in the longitudinal direction of the ribbon beam 12 as shown in Fig. By measuring at a plurality of positions in the movable range C, the beam current uniformity of the ribbon beam 12 can be measured.

The movable range (C) of the scan faraday (82) reaches the longitudinal end of the ribbon beam (12). The end of the ribbon beam 12 passes through the side of the substrate S even when the substrate S enters the ribbon beam 12 because the width of the ribbon beam 12 is wider than the width of the substrate S . This allows the scan Faraday 82 to measure the beam current (at the beam end) of the ribbon beam 12 even when the substrate S has entered the ribbon beam 12. Accordingly, the scan Faraday 82 can measure the beam current not only before and after implantation but also during implantation.

By using the measurement result of the beam current uniformity, the control section 32 may control the beam current uniformity in the longitudinal direction of the ribbon beam 12. For example, the control section 32 may adjust the input power to each of a plurality of plasma exciters (for example, the RF antenna 40) in order to improve the beam current uniformity. Alternatively, the plasma electrode 52 and / or the extraction electrode 56 may be moved and / or deformed to improve the beam current uniformity so that the beam length direction distribution of the interval between the plasma electrode 52 and the extraction electrode 56 May be adjusted.

However, the measuring device for measuring the beam current uniformity may not be a movable type. For example, beam current uniformity may be measured using a plurality of measuring devices arranged in the beam length direction. The beam current meter may include a fixed Faraday 84 described below.

The stationary Faraday 84 is a stationary beam current meter, for example, a Faraday cup. The fixed Faraday 84 is provided to measure the average beam intensity. For example, three fixed Faradays 84 are provided, two of which are disposed at both ends of the ribbon beam 12, and the other one is disposed at the center of the ribbon beam 12. The fixed Faraday 84 at both ends is arranged so that the beam current of the ribbon beam 12 can be measured even when the substrate S enters the ribbon beam 12. Thus, stationary Faraday 84 can also measure the beam current during implantation as well as before and after implantation. The central stationary Faraday 84 is used, for example, to measure the beam current before injection. Therefore, the control unit 32 can use an average of a plurality of (for example, three) fixed Faradays 84 as the pre-injection beam current.

The mass spectrometer 86 measures the ion current for each type of ion. At least the dopant ions and the hydrogen ions (H _x ⁺ ) are included in the ribbon beam 12 from the source gas composition. The dopant ions include monomer ions and dimer ions. Thus, the mass spectrometer 86 can measure the ion currents of monomer ions, dimer ions, hydrogen ions, and (if present) other ions, respectively. The mass spectrometer 86 can measure the ratio of the dopant ion current to the beam current of the ribbon beam 12 (i.e., the dopant ratio Fd). The mass spectrometer 86 is capable of measuring the ion composition of the ribbon beam 12.

The ribbon beam 12 selectively irradiates the substrate S and the mass analyzer 86. That is, the mass spectrometer 86 is disposed at a position where the substrate S is not irradiated with the ribbon beam 12 when the substrate S is irradiated with the ribbon beam 12. Therefore, the mass spectrometer 86 performs beam mass spectrometry measurement between the substrate and the subsequent substrate in the continuous implantation process for a plurality of substrates.

Since the ion implantation apparatus 10 is constructed in an in-line type, a plurality of substrates sequentially pass through the ribbon beam 12 successively. It is desired that the processing time of each of the plurality of substrates is made constant. Therefore, it is desired to move a plurality of substrates at a constant substrate scanning speed Vs suitable for the constant processing time. However, the ion implantation conditions may differ depending on the substrate.

The controller 32 controls the lead voltage Vex based on the desired dose amount D for the substrate S and the substrate scanning speed Vs to determine the beam current J of the ribbon beam 12 ). The beam current J can be expressed as J (Vex) as a function of the extraction voltage Vex. The implantation dose D and the substrate scanning speed Vs and the beam current J (Vex) can be associated with each other. An example of such association is shown in the following equation. Here, qe is an electron charge and? Is a proportional constant. The proportionality constant a is determined, for example, in dependence on the beam metering system 78.

[Number 1]

The state of the plasma 21 is determined from the concentration, flow rate, and RF power of the source gas as described above. When these plasma control parameters are kept constant, the plasma state is kept constant and the dopant ratio Fd is constant. Since the injection dose amount (D), the electron charge amount (qe) and the proportional constant (?) Are both constant, the above formula gives the relationship between the substrate scanning speed (Vs) and the beam current (J) .

Therefore, the control unit 32 can set the beam current J (Vex) and the extraction voltage Vex before injection according to given conditions. That is, the control unit 32 can control the drawing voltage Vex so as to give a desired dose amount D and maintain a constant substrate scanning speed Vs. The control unit 32 derives the beam current J from the right side of the relational expression before injection into the substrate S and sets the drawing power source 72 to the drawing voltage Vex corresponding to the current value. As a result, the substrate S is irradiated with the ribbon beam 12 having the beam current Jex (Vex) corresponding to the lead voltage Vex.

The control section 32 may control the suppression voltage in place of or in conjunction with the lead-out voltage Vex. In this manner as well, the implantation dose D and the substrate scanning speed Vs can be realized. At this time, the control unit 32 may control the ion beam extraction condition so as to obtain the implant dose D and maintain the predetermined implantation profile.

In one embodiment, the control unit 32 may perform feedback control of the beam current J. The control unit 32 may control the beam current J before and / or during implantation based on the beam current measurement result before implantation and / or implantation. For example, the control unit 32 may control the ion beam extraction condition (for example, the extraction voltage Vex) so that the measured beam current matches the target beam current. The target beam current is given, for example, by the right side of the above relationship. In one embodiment, the control unit 32 may control the substrate scanning speed Vs based on the measured beam current and the dose amount D before and / or during implantation.

In one embodiment, the control unit 32 may control the ion source 18 by combining the plasma control condition change and the ion beam extraction condition change. In this case, the plasma source 22 is operated according to the changed plasma control condition, and the drawing electrode system 24 is operated by the modified ion beam drawing condition. The control unit 32 may perform optimal control using such a composite control. For example, the control section 32 may perform the composite control so as to maximize the outgoing beam current and / or the dopant injection beam current. Alternatively, the control unit 32 may execute the composite control so as to obtain the best beam uniformity.

Further, in one embodiment, the control section 32 may control the dopant ratio Fd by changing the plasma control condition of the plasma source 22. By controlling the dopant ratio Fd, the injection profile can be improved.

5 is a diagram showing an injection profile obtained by an ion implantation apparatus 10 according to an embodiment of the present invention. 5, the ordinate axis indicates the dopant concentration and the abscissa axis indicates the depth of implantation. As shown in the drawing, the ion implantation apparatus 10 can obtain an implant profile having a remarkable peak on the rough surface of the substrate S and monotonously decreasing the dopant concentration as the depth increases. Such a profile is desirable for solar cell performance. It is believed that the profile is improved in this way because the ribbon beam 12 contains dimer ions of the dopant. The comparative example shown in Fig. 5 is a profile obtained when only monomer ions are implanted into a conventional ion-implanting apparatus. The comparative example has a peak at a deep place as compared with the embodiment.

6 is a plan view schematically showing an in-line type vacuum chamber system 100 for an ion implantation apparatus 10 according to an embodiment of the present invention. The vacuum chamber system 100 includes a central chamber 16 as described above and the central chamber 16 includes a process chamber 26, an upstream buffer chamber 28, and a downstream buffer chamber 30. A ribbon beam 12 is supplied to the process chamber 26.

The vacuum chamber system 100 includes a substrate transport system 102 for moving a substrate S along a substrate movement path A. The substrate transport system 102 transports the substrate S in one direction along the substrate movement path A, whereby the one-scan injection process is enabled. The substrate transfer system 102 includes a substrate transfer mechanism for the central chamber 16.

The vacuum chamber system 100 has a first load lock chamber 104 upstream of the central chamber 16 and a second load lock chamber 106 downstream of the central chamber 16. The first load lock chamber 104 is mounted to the upstream buffer chamber 28 of the central chamber 16 via a first load lock valve 108. The second load lock chamber 106 is mounted to the downstream buffer chamber 30 of the central chamber 16 via the second load lock valve 110.

If necessary, the vacuum chamber system 100 includes a pre-process section 111 and a post-process section 112. The pre-process processing unit 111 performs the pre-process of the ion implantation process for the substrate S to be performed in the central chamber 16. The post-processing unit 112 performs the post-process of the ion implantation process. The front-end processing unit 111 is attached to the first load-lock chamber 104 through the third load-lock valve 114. The post-processing unit 112 is mounted to the second load lock chamber 106 through the fourth load lock valve 116.

Therefore, the substrate transfer system 102 is provided with the pre-process processing unit 111, the first load lock chamber 104, the central chamber 16, the second load lock chamber 106, and the post-process processing unit 112 in this order And the substrate S is transported. As shown, the substrate transport system 102 continuously transports a plurality of substrates S, and enables ion implantation processing in an in-line state. The central chamber 16 is configured to accommodate two substrates S at the same time. 1 and 6 show a substrate S1 being subjected to an ion implantation process and a substrate S2 being processed next.

The first load lock chamber 104 and the second load lock chamber 106 are provided for transferring the substrate S between the atmospheric environment and the high vacuum environment of the central chamber 16. [ The first load lock chamber 104 and / or the second load lock chamber 106 and / or the second load lock chamber 106 are provided in the case where the pre-process unit 111 and / or the post-process unit 112 are in a high- ) May not be necessary.

The load lock chambers 104 and 106 may be configured to perform a vacuum removing operation of venting and roughing at the time of transferring the substrate S to the central chamber 16. [ In this manner, leakage of the source gas to the outside can be prevented. When a source gas having toxicity is used, such a load lock method is preferable.

A mask M may be used for the ion implantation treatment in the central chamber 16. [ Therefore, the pre-process processing unit 111 may be configured to mount the mask M on the substrate S (for example, a solar cell tray, the same in the following description). In this case, ion implantation is performed on the substrate S in the process chamber 26 with the mask M mounted thereon. The post-process processing unit 112 may be configured to separate the mask M from the processed substrate S. In order to mount and detach the mask M, a mask long desorption cell tray transfer mechanism 118 may be provided outside the vacuum chamber system 100. The transfer mechanism 118 may be configured to transfer the separated mask M for reattaching.

A vacuum chamber system 100 and a conveyance control device 120 for controlling the substrate conveyance system 102 are provided. The transport control device 120 may be integrally formed with the control section 32 for the ion implantation apparatus 10 or may be provided separately from the control section 32. [

The transport control device 120 can set the substrate scanning speed Vs in the substrate transport system 102 to be constant. The transport control device 120 may set the substrate scanning speed Vs in accordance with the ion beam generating conditions and / or the ion implantation conditions for the substrate S.

Alternatively, the transport control device 120 may adjust the substrate scanning speed Vs, if necessary. For example, the transport control device 120 may adjust the substrate scanning speed Vs while the substrate S passes through the ion beam region 14. [ Alternatively, the transporting control device 120 may change the substrate scanning speed Vs while the substrate S is passing through the ion beam region 14 and when the substrate S is out of the ion beam region 14 .

The substrate transport system 102 may be provided with a cooling device for the substrate S to be transported. The cooling device may be configured to circulate the cooling liquid through a table and / or a tray on which the substrate is placed. For good thermal contact between the substrate and the substrate surface, the surface may have a surface roughness of, for example, Ra of about 30 탆. The mounting surface may be roughened by, for example, Si spraying.

The operation of the ion implantation apparatus 10 will be described. The case where the substrate S is a solar cell cell tray S in which a plurality of solar cells are placed in a matrix form will be described as an example. First, from the desired ion implantation conditions and the scanning speed Vs of the inline vacuum chamber 100, ion beam generating conditions including plasma control conditions and ion beam extraction conditions are set.

The ion source 18 is operated in accordance with the ion beam generating conditions. The plasma source 22 is operated in accordance with the plasma control condition, and the plasma 21 containing the desired ion species is excited into the plasma chamber 20. [ The extraction electrode system 24 is operated in accordance with the ion beam extraction condition so that the ribbon beam 12 is continuously drawn out from the plasma chamber 20 through the extraction electrode system 24. The drawn ribbon beam 12 is directly incident on the process chamber 26. In this manner, the long ribbon beam 12 that meets the width of the solar cell tray S is always irradiated to the process chamber 26.

The solar cell tray S is transferred to the first load lock chamber 104 from the previous process. The mask M is mounted on the solar cell tray S as needed. The third load lock valve 114 is opened and the solar cell tray S is inserted into the first load lock chamber 104. [ The third load lock valve 114 is closed, and the first load lock chamber 104 is roped by the roughing pump (not shown). Next, the first load lock valve 108 is opened, and the solar battery cell tray S is transferred to the upstream buffer chamber 28. The first load lock valve 108 is closed and the solar cell tray S is accommodated in the upstream buffer chamber 28. [

The solar cell tray S is transferred to the downstream buffer chamber 30 while passing under the ribbon beam 12 at the scanning speed Vs by the cell tray scanning mechanism 102 in the central chamber 16. [ When the solar cell tray S is moving in the process chamber 26, the ribbon beam 12 is irradiated to the solar cell tray S to perform ion implantation. During ion implantation, the ion beam generating conditions are changed as necessary based on the measurement results. Thereby, a desired injection is performed based on the scanning speed Vs.

1 and 6 show a solar cell tray S1 being subjected to the ion implantation process and a solar cell cell tray S2 being processed next. The preceding cell tray S1 and the succeeding cell tray S2 are moved to the same scanning speed Vs together. The succeeding cell tray S2 follows the preceding cell tray S1 by a predetermined distance. Once the cell tray S1 has completely passed through the ribbon beam 12, one ion implantation process for the cell tray S1 is completed. Subsequently, the next cell tray S2 enters the ribbon beam 12, and ion implantation of the cell tray S2 is started.

After the roughing of the second load lock chamber 106, the second load lock valve 110 is opened, and the completed solar cell tray S is transferred to the second load lock chamber 106. The second load lock valve 110 is closed and the second load lock chamber 106 is vented to the atmospheric pressure. Thereafter, the fourth load lock valve 116 is opened, and the solar cell tray S is transferred to the post-processing unit 112. When the mask M is mounted, the mask M is separated from the solar cell tray S. The mask M is returned to the pre-processing unit 111 by the mask length desorption cell tray transfer mechanism 118.

7 is a flowchart showing an ion implantation method according to one embodiment of the present invention. This ion implantation method is executed by the control section 32 and / or the conveyance control device 120. [ As shown in Fig. 7, this method includes an ion beam generation step (S10) and an ion implantation step (S20).

The ion beam generating step S10 includes setting and / or controlling the ion beam generating conditions of the ion source 18, generating the plasma 21 in the plasma chamber 20 of the ion source 18, And drawing out the ion beam 12 through the extraction electrode system 24 of the electrode system 18. The ion beam 12 has a characteristic (for example, a beam current) determined according to an ion beam generating condition.

The ion implantation step S20 includes the steps of receiving the ion beam 12 from the ion source 18 into the process chamber 26 and moving the substrate S through the ion beam region 14 of the process chamber 26 . The ion beam 12 is directly irradiated from the drawing electrode system 24 to the ion beam region 14 while the substrate S passes through the ion beam region 14. [ The beam characteristic determined at the step taken out from the drawing electrode system 24 is held in the ion beam region 14. [

As described above, according to the present embodiment, the ion implantation apparatus 10 is configured so that the beam characteristic of the large-area, high-current ribbon beam 12 is adjusted by the ion source 18 so as to be suitable for the desired implantation condition and the in- And the ribbon beam 12 is irradiated on the substrate S. In this manner, the ion implantation apparatus 10 can realize high productivity at low cost.

According to the present embodiment, in addition to the above-described typical effects, various effects described below may be exhibited.

The ion source is a bucket type ion source capable of generating a high-density plasma using inductive discharge by RF. Along with this, or in addition thereto, the beam exit system is constituted by a drawing slit system or the like having a large-area and wide beam drawing opening. This allows the ribbon beam of high implanted dopant current to be drawn. In addition, this large area ribbon beam is injected directly onto the substrate without mass analysis. Therefore, high productivity can be realized.

In addition, such a high-current ribbon beam is introduced into an in-line manufacturing line. In the implantation process, the injection beam of a large area is always irradiated. A plurality of cell substrate arrangements are continuous and move downward in one direction at a constant rate. In this manner, the desired dopant dose is implanted. High productivity is achieved by continuous processing of multiple substrates. Since these substrates are moved in a line in one direction, they are conveyed to the next process while maintaining the vacuum. Shortening the transfer time between processes also helps to improve productivity.

In an in-line manufacturing line, it is important to treat the substrate at a constant speed. Therefore, in the case of successively processing the substrate of the recipes of different doses immediately after the substrate is treated with the predetermined dose amount, it is preferable to appropriately adjust the injected dopant current before starting the processing of the latter substrate. According to the present embodiment, the injection dopant current can be changed without changing the injection energy by changing the extraction current by changing the extraction voltage. Since the output voltage can be changed at high speed, the injected dopant current can be adjusted quickly. Therefore, it is possible to continuously process the substrates of various recipes, while maintaining the processing speed of the line at a high speed. Thus, smooth inline substrate processing can be realized while maintaining the line processing speed constant.

In a conventional impurity introducing apparatus for a solar battery cell, a hot cathode type ion source employed in an ion implanting apparatus for a semiconductor may be used. In that case, since the beam is extracted from a single hole, a sufficient beam extraction current can not be obtained, and therefore a large amount of injection beam current can not be obtained. Since the implantation depth required for the solar cell is shallow (i.e., the implantation energy is low), the extraction current at the extraction voltage corresponding to this implantation energy is also lowered, and hence the implantation beam current is also lowered. Mass analysis further degrades the beam current. However, according to the present embodiment, it is possible to increase the amount of outgoing beam current by forming a long drawing opening by employing a bucket source. As a result, the injection beam current is increased, the injection time is shortened, and high productivity is achieved.

The RF plasma excitation type ion source is operated at a lower temperature than the hot cathode type ion source, so that the temperature of the plasma generation chamber can be kept low. As a result, PH ₃ or B ₂ H ₆ (which is decomposed by H and a dopant atom at about 300 ° C.), which is easily decomposed at a high temperature, can be used as a source gas. By adjusting the plasma control conditions, the ratio of the dimer ion to the monomer ion can be freely changed. Preferably, a plasma containing predominantly dimer ions such as P ₂ H _x ⁺ or B ₂ H _x ⁺ can be generated while suppressing monomer ions such as PH _x ⁺ and BH _x ⁺ . Thus, the dopant injection beam current can be greatly increased with respect to the yarn injection current, so that the injection time is shortened and high productivity is achieved.

The conventional semiconductor injection device has a mass analyzer and has a long beam line, so that the loss in the beam transport system is large. This causes the injection beam current to drop. However, according to this embodiment, PH ₃ and B ₂ H ₆ diluted with H ₂ as the dopant gas can be used to inject the outgoing beam without including mass analysis and including H _x ⁺ . Therefore, the length of the beam transport system Can be shortened to about 1/10. In this way, the injection beam current can be greatly increased, the injection time is shortened, and high productivity is achieved.

Any conventional apparatus can process only two rows of substrates at the same time. However, according to the present embodiment, since the long ribbon-beam drawing is realized, four or more solar cell substrates can be arranged and the ribbon beams can be simultaneously irradiated and transported and injected at a constant speed. Therefore, the productivity can be improved to twice or more as compared with the conventional art.

Unlike the conventional stand-alone type apparatus, according to this embodiment, a buffer chamber is provided before and after the injection process chamber. Further, a load lock chamber is provided as needed. In this manner, an in-line type device can be realized by feeding and injecting the material at a constant speed in one direction at the time of injection.

The ion implantation can be applied to the production cost that is allowed in the production of the solar cell substrate. The conventional technique, for example, thermal diffusion of phosphorus for pn junction or selective emitter fabrication, or thermal diffusion of boron in BSF can be replaced by ion implantation. The impurity dose and the diffusion depth can be precisely controlled by the ion implantation, so that the performance (for example, conversion efficiency) of the solar cell can be improved.

In the solar cell, the injection profile of the impurities such as phosphorus or boron is monotonically reduced in the depth direction in terms of performance. When there is a peak in the depth direction, the impurity concentration is high at the depth position, and thus becomes a movement barrier of electrons. Therefore, the conversion efficiency of the solar cell is lowered. To improve the profiles with peaks to the profile of monotonic reduction, the conventional technique requires multiple implantation treatments with different implantation energies. In the case of injecting only monomer ions through mass analysis, as shown in Fig. 5, a profile having a peak tends to be formed. However, according to this embodiment, dimer ions can be injected into the substrate. Thus, the injection profile of monotonous reduction can be obtained by injection injection once. Therefore, the conversion efficiency of the cell can be improved and the productivity can be improved.

By using H ₂ diluted PH ₃ and B ₂ H ₆ as the source gas, a large amount of H _x ⁺ is contained in the injection beam and they are injected simultaneously with the desired ion species. This hydrogen implantation has a hydrogen passivation effect at the bulk or film interface of the substrate.

The present invention has been described above based on the embodiments. It is to be understood by those skilled in the art that the present invention is not limited to the above-described embodiment, and that various design changes are possible and that various modifications are possible and that such modifications are also within the scope of the present invention.

In the above-described embodiment, the elongated ion source of the RF plasma excitation type having one or a plurality of RF antennas is used, but the present invention is not limited thereto. In one embodiment, the ion source 18 may be an ECR plasma excitation type ion source having a long ECR plasma chamber. In one embodiment, the ion source 18 may be an ion source of a filament type DC discharge type or a heat radiation filament type cathode having one long or a plurality of heating cathodes.

In the embodiment described above, the substrate S is transported in one direction, and the ion implantation process is completed once in one scan. However, the present invention is not limited to this. In one embodiment, the substrate S may be reciprocated in the process chamber 26 or central chamber 16 to be scanned multiple times by the ribbon beam 12. In this way, the high-dose injection process may be enabled.

In one embodiment, the ion implantation apparatus may be used to obliquely inject Ar ions into a substrate (e.g., an LCD substrate). In this case, for inclined implantation, the ion source is installed at a predetermined angle with respect to the substrate. In this way, a rubbing effect can be imparted to the substrate. Alternatively, in one embodiment, the ion implantation apparatus may be used as an implanting apparatus for CuSiN film production by simultaneous high-dose implantation of Si ⁺ and N ⁺ for improving the reliability of Cu wiring of a semiconductor element. Alternatively, in one embodiment, the ion implantation apparatus may be used as a manufacturing apparatus for manufacturing a touch panel sensor, an LED, or the like.

Hereinafter, some aspects of the present invention will be described.

In an ion implantation apparatus according to an embodiment,

An ion source including a plasma chamber, a plasma source for generating a plasma in the plasma chamber, and an extraction electrode system for extracting an ion beam having a long beam cross section from the plasma chamber,

A processing chamber provided adjacent to the ion source and having a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiated region as a processing chamber for receiving the ion beam from the drawing electrode system,

And a control unit for controlling an ion beam generating condition of the ion source,

The ion beam has a beam current determined in accordance with the ion beam generating condition, and the ion beam is directly irradiated from the drawing electrode system to the substrate moving in the ion beam irradiation region while maintaining the beam current.

The ion beam generating condition may include a drawing condition of the drawing electrode system and / or a plasma controlling condition of the plasma source. The ion beam generating condition may include an extraction voltage of the extraction electrode system.

The control section may adjust the beam current by controlling the ion beam generating conditions based on a given injection dose amount to the substrate and a given substrate moving speed. The substrate moving mechanism may move the substrate at a substantially constant speed.

The control section may control an ion composition of the ion beam by changing a plasma control condition of the plasma source.

Wherein the plasma source includes a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ , or H ₂ to the plasma chamber, and a high frequency plasma excitation source for generating plasma from the source gas do.

The plasma chamber may have a plurality of elongated exit openings adjacent to each other, and each elongated exit opening may be formed along a direction perpendicular to the movement path. The extraction electrode system may have a plurality of slits corresponding to the plurality of elongated exit openings, and each slit may be provided to extract an ion beam having the long-axis beam cross-section. The width of the ion beam irradiated region with respect to the direction along the movement path may be wider than the width of the longitudinal direction of the long beam.

The plasma source may be configured to generate in the plasma chamber a plasma containing monomer ions and dimer ions of ion species to be injected into the substrate. The drawing electrode system may be configured to draw out an ion beam containing monomer ions and dimer ions from the plasma chamber. The ion beam irradiation region may be allowed to receive both monomer ions and dimer ions.

The ion implantation method or ion implantation apparatus according to one embodiment relates to a continuous long ribbon ion implantation apparatus. The present apparatus is configured to generate a long plasma in a long plasma chamber of an ion source. The present apparatus is configured to draw a long ribbon-shaped ion beam from a long-shaped plasma from a source opening by a beam extraction electrode system. The present apparatus is configured to irradiate a continuously moving substrate or group of substrates with the ribbon-shaped ion beam drawn out. The present method or apparatus makes it possible to control the beam current and / or dopant injection profile of the dopant injection beam by changing either or both of the plasma control conditions of the ion source and the ion beam control conditions of the beam extraction electrode system. The present method or apparatus may make it possible to control the beam current and / or dopant injection profile of the dopant injection beam by changing plasma control conditions and / or ion beam control conditions of the ion source and beam extraction electrode system.

In one embodiment, the beam current of the dopant injection beam may be controllable by changing the ion beam control condition of the ion source. In one embodiment, it is possible to control the dopant implantation profile by changing the plasma control condition of the ion source. In one embodiment, the beam current and the dopant implantation profile of the dopant implantation beam may be controlled simultaneously by simultaneously changing the beam control conditions and the plasma control conditions of the ion source. In one embodiment, plasma generation conditions may be changed so as not to change plasma production control conditions (monomer, dimer ratio, etc.) of the ion source.

10 Ion implantation device
12 Ribbon beam
14 Ion Beam Region
18 ion source
20 Plasma room
21 Plasma
22 plasma source
24 Lead electrode system
26 Process chamber
32 control unit
36 gas supply source
40 RF antenna
50 outlet opening
56 drawing electrode
120 conveyance control device
A substrate moving path
S substrate
Vex output voltage
Vs substrate scanning speed

Claims (12)

An ion source including a plasma chamber, a plasma source for generating a plasma in the plasma chamber, and an extraction electrode system for extracting an ion beam having a long beam cross section from the plasma chamber,
A processing chamber provided adjacent to the ion source and having a substrate moving mechanism for moving the substrate along a substrate moving path passing through the ion beam irradiated region as a processing chamber for receiving the ion beam from the drawing electrode system,
And a control unit for controlling an ion beam generating condition of the ion source,
Wherein the ion beam has a beam current determined according to the ion beam generating condition and the ion beam is irradiated directly from the drawing electrode system to the substrate moving in the ion beam irradiation region while maintaining the beam current. Injection device. The method according to claim 1,
Wherein the ion beam generating condition includes a drawing condition of the drawing electrode system and / or a plasma controlling condition of the plasma source. 3. The method according to claim 1 or 2,
Wherein the ion beam generating condition includes an extraction voltage of the extraction electrode system. 3. The method according to claim 1 or 2,
Wherein said control unit controls said beam generating conditions to adjust said beam current based on a given implant dose for a substrate and a given substrate transfer rate. 3. The method according to claim 1 or 2,
Wherein the substrate moving mechanism moves the substrate at a substantially constant speed. 3. The method according to claim 1 or 2,
Wherein the control unit controls the ion composition of the ion beam by changing a plasma control condition of the plasma source. 3. The method according to claim 1 or 2,
Wherein the plasma source includes a gas supply source for supplying a source gas containing PH ₃ , B ₂ H ₆ , or H ₂ to the plasma chamber, and a high frequency plasma excitation source for generating plasma from the source gas Ion implantation device. 3. The method according to claim 1 or 2,
Wherein the plasma chamber has a plurality of elongated exit openings adjacent to each other, each elongated exit opening formed along a direction perpendicular to the travel path,
Wherein the extraction electrode system has a plurality of slits corresponding to the plurality of elongated exit openings, each slit being provided to extract an ion beam having the long-side beam cross-section,
Wherein a width of the ion beam irradiation region with respect to a direction along the movement path is wider than a width of the longitudinal direction of the long beam. 3. The method according to claim 1 or 2,
Wherein the plasma source is configured to generate in the plasma chamber a plasma containing monomer ions and dimer ions of ion species to be injected into the substrate,
Wherein the drawing electrode system is configured to draw out an ion beam containing monomer ions and dimer ions from the plasma chamber,
Wherein the ion beam irradiation region is allowed to receive both monomer ions and dimer ions. Controlling the ion beam generating conditions of the ion source,
Withdrawing the ion beam through the extraction electrode system of the ion source,
Receiving the ion beam from the ion source into a processing chamber,
And moving the substrate so as to pass through the ion beam irradiation region of the processing chamber,
Wherein the ion beam has a beam current determined according to the ion beam generating condition and the ion beam is irradiated directly from the drawing electrode system to the substrate moving in the ion beam irradiation region while maintaining the beam current. Injection method. An ion source having an extraction electrode system for extracting the ion beam,
And a processing chamber configured to receive the ion beam from the ion source and configured to allow the ion beam irradiation region to pass through the substrate,
Wherein the ion beam has a characteristic determined according to an ion beam generating condition of the ion source and maintains the characteristic from the drawing electrode system to the ion beam irradiation region while the substrate passes through the ion beam irradiation region, And the region is directly irradiated onto the moving substrate. Withdrawing the ion beam through the extraction electrode system of the ion source,
Receiving the ion beam from the ion source into a processing chamber,
Passing the ion beam irradiated region of the treatment chamber to the substrate,
Wherein the ion beam has a characteristic determined according to an ion beam generating condition of the ion source and maintains the characteristic from the drawing electrode system to the ion beam irradiation region while the substrate passes through the ion beam irradiation region, And the region is directly irradiated onto the moving substrate.

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