JP2011129332A - Ion beam irradiation device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ion beam irradiation device capable of realizing various ion beam irradiation characteristics and suppressing increase in the device size, deterioration of through-put, and adhesion of particles on a substrate. <P>SOLUTION: The ion beam irradiation device is provided with a plurality of treatment chambers 10 connected serially each other, an entrance side vacuum preparatory chamber 6 connected to one end side of the above, an exit side vacuum preparatory chamber connected to the other end side, and a substrate transporting device to transport one or more substrates 2 from the atmosphere to the atmosphere through the entrance side vacuum preparatory chamber 6, the plurality of the treatment chambers 10 and the exit side vacuum preparatory chamber. Further, the device is provided with a plurality of ion beam supply units 50 each to supply ion beams 54 of a ribbon shape to each treatment chamber 10, and to irradiate ion beams 54 on a whole surface of each substrate 2 in collaboration with the transfer of the substrates 2, and a plurality of ion beam irradiations are carried out on the whole surface of each substrate 2 by the plurality of the ion beam supply units 50. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an ion beam irradiation apparatus that irradiates a substrate (for example, a glass substrate for a flat panel display) with an ion beam, and performs processing such as ion implantation and ion beam alignment processing on the substrate. , A method of irradiating a substrate with a ribbon-like ion beam (which may be called a sheet-like shape or a belt-like shape, the same applies hereinafter) and transporting the substrate in a direction crossing the main surface of the ion beam. The present invention relates to an ion beam irradiation apparatus. This ion beam irradiation apparatus is also called an ion implantation apparatus when ion implantation is performed on a substrate.

  Patent Document 1 describes an example of a conventional ion beam irradiation apparatus that performs ion beam irradiation on the entire surface of a substrate by using both a ribbon-like ion beam and substrate conveyance.

The ion beam irradiation apparatus described in Patent Document 1 extracts a ribbon-like ion beam having a large longitudinal dimension (corresponding to a Z-direction dimension W _Z described later) from an ion source, and analyzes the ion beam for a long gap length. After performing mass separation through an electromagnet, it is guided to a processing chamber, and the substrate is irradiated with the ion beam in the processing chamber to perform ion implantation on the entire surface of the substrate.

  Although not described in Patent Document 1, the above-described processing chamber is normally provided with an inlet side (load side) vacuum preparatory chamber for loading the substrate into the processing chamber from the atmosphere, and the substrate from the processing chamber to the atmosphere. A vacuum preparatory chamber on the outlet side (unload side) for carrying out to the vehicle is adjacent via a vacuum valve (see, for example, Patent Document 2).

Japanese Patent Laying-Open No. 2005-327713 (FIGS. 1 to 4) Utility Model Registration No. 2587864 (FIG. 1)

  In one conventional ion beam irradiation apparatus as described above, the feasible ion beam irradiation characteristics (for example, dose amount, ion energy, etc.) are limited, and in order to realize more various ion beam irradiation characteristics, Conventionally, a plurality of ion beam irradiation apparatuses as described above are provided, one substrate is transferred to a plurality of ion beam irradiation apparatuses, and a single substrate is processed by a plurality of ion beam irradiation apparatuses. The method was taken.

  However, in the conventional method as described above, each ion beam irradiation apparatus has a processing chamber and two vacuum preparatory chambers as described above, so that a plurality of ion beam irradiation apparatuses are provided. There exists a subject that the whole apparatus containing becomes very large.

  In addition, in order to carry the substrate in and out of the processing chamber of each ion beam irradiation apparatus, it is necessary to vent each vacuum preliminary chamber (return to atmospheric pressure) and then evacuate again. Since it is necessary to carry out each of the ion beam irradiation apparatuses, there is a problem that it takes a lot of time to carry the substrate in and out and the throughput is lowered.

  Furthermore, when a single substrate is transported to a plurality of ion beam irradiation apparatuses, the substrate once passes through the atmosphere between the plurality of ion beam irradiation apparatuses, and particles (fine particles) adhere to the substrate at that time. There is also a problem that the possibility increases.

  Therefore, the main object of the present invention is to provide an ion beam irradiation apparatus that can realize various ion beam irradiation characteristics, and can suppress the enlargement of the apparatus, the reduction in throughput, and the adhesion of particles to the substrate. Yes.

  The ion beam irradiation apparatus according to the present invention is connected in series to each other, and is connected to a plurality of processing chambers for performing ion beam irradiation on the substrate, and one end side of the processing chambers connected in series. An inlet-side vacuum preliminary chamber for carrying the substrate from the atmosphere into the processing chamber on the one end side, and the other end side of the serially connected processing chamber, and the substrate is connected to the other end side. An outlet-side vacuum preliminary chamber for carrying out from the processing chamber to the atmosphere and one or more of the substrates pass from the atmosphere through the inlet-side vacuum preliminary chamber, the plurality of processing chambers, and the outlet-side vacuum preliminary chamber. A substrate transfer device that transfers to the atmosphere, and a ribbon-like ion beam having a dimension in a longitudinal direction that crosses the substrate in a direction that intersects the direction in which the substrate is transferred to each processing chamber. The main surface of each A plurality of ion beam supply devices that respectively supply the substrate in a direction intersecting the substrate transport direction in the laboratory and irradiate the entire surface of each substrate with the ion beam in cooperation with the substrate transport; In addition, the plurality of ion beam irradiations by the plurality of ion beam supply devices are respectively performed on the entire surface of each substrate.

  In this ion beam irradiation apparatus, one or more substrates can be transported into the atmosphere by the substrate transport apparatus through the atmosphere, through the inlet side vacuum preliminary chamber, the plurality of processing chambers, and the outlet side vacuum preliminary chamber, In the meantime, since a plurality of ion beam irradiations can be performed on the entire surface of each substrate using a plurality of ion beam supply apparatuses in a plurality of processing chambers, various ion beam irradiation characteristics can be realized. .

  Moreover, since the common inlet side vacuum preliminary chamber and the outlet side vacuum preliminary chamber are provided in the plurality of processing chambers, compared to the case where the inlet side vacuum preliminary chamber and the outlet side vacuum preliminary chamber are provided in the plurality of processing chambers, respectively. Thus, it is possible to suppress the increase in size of the ion beam irradiation apparatus and to suppress a decrease in throughput.

  Furthermore, since the substrate does not pass through the atmosphere when transporting between a plurality of processing chambers, it is possible to suppress particle adhesion to the substrate.

  The ion beam irradiation apparatus according to the present invention is finally required for each of the substrates by controlling the plurality of ion beam supply apparatuses and totaling the plurality of ion beam irradiations by the plurality of ion beam supply apparatuses. There may be provided a control device having a function of performing control for realizing a proper ion beam irradiation characteristic.

  According to the first aspect of the present invention, one or more substrates are transported into the atmosphere by the substrate transport apparatus through the atmosphere, through the inlet-side vacuum preliminary chamber, the plurality of processing chambers, and the outlet-side vacuum preliminary chamber. In the meantime, since a plurality of ion beam irradiations can be performed on the entire surface of each substrate using a plurality of ion beam supply apparatuses in a plurality of processing chambers, various ion beam irradiation characteristics are realized. be able to.

  Moreover, since the common inlet side vacuum preliminary chamber and the outlet side vacuum preliminary chamber are provided in the plurality of processing chambers, compared to the case where the inlet side vacuum preliminary chamber and the outlet side vacuum preliminary chamber are provided in the plurality of processing chambers, respectively. Thus, it is possible to suppress the increase in size of the ion beam irradiation apparatus and to suppress a decrease in throughput.

  Furthermore, since the substrate does not pass through the atmosphere when transporting between a plurality of processing chambers, it is possible to suppress particle adhesion to the substrate.

  According to invention of Claim 2, there exists the following further effect. In other words, a control device having a function of performing control to finally realize necessary ion beam irradiation characteristics for each substrate by a total of a plurality of ion beam irradiations by a plurality of ion beam supply devices is provided. Therefore, finally necessary ion beam irradiation characteristics can be easily realized.

  According to invention of Claim 3, there exists the following further effect. In other words, since the control device has a control function as described in the claims, it is possible to easily realize the finally required ion beam dose.

  According to invention of Claim 4, there exists the following further effect. That is, since the control device has a control function as described in the claims, it is possible to easily realize the finally required implantation depth distribution.

  According to invention of Claim 5, there exists the following further effect. That is, since the beam monitor as described in the claim is provided and the control device has the control function as described in the claim, each substrate is subjected to a total of a plurality of ion beam irradiations. On the other hand, the ion beam dose distribution in the longitudinal direction of the ion beam can be made uniform.

  According to invention of Claim 6, there exists the following further effect. That is, since the control device includes the individual control device having the control function as described in the claims and the overall control device, it is possible to share the individual control of each ion beam supply device with the overall control. Since it becomes clear, it becomes easier to control each substrate to realize finally required ion beam irradiation characteristics by the sum of the plurality of ion beam irradiations by the plurality of ion beam supply apparatuses. This effect becomes more prominent when the number of ion beam supply apparatuses is large or when complex ion beam irradiation characteristics are realized.

  According to the seventh aspect of the present invention, the following further effect is obtained. That is, since the substrate is transported upright from the inlet side vacuum preliminary chamber to the outlet side vacuum preliminary chamber, it is possible to suppress adhesion of particles to the processing surface of the substrate. In addition, the footprint (occupied floor area) of each room and thus the overall footprint of the ion beam irradiation apparatus can be reduced.

  The invention according to claim 8 has the following further effect. That is, when the substrate stand-up device and the substrate overturning device as described in the claims are provided and the substrate can be raised or lowered outside the vacuum preparatory chamber, the operation is performed in the vacuum preparatory chamber. In comparison, each vacuum preliminary chamber can be made smaller. In addition, since it is not necessary to provide a mechanism for performing the above operation in the vacuum preliminary chamber, it is possible to suppress the generation of particles in the vacuum preliminary chamber.

  The invention according to claim 9 has the following further effect. That is, since the substrate can be kept waiting in the standby chamber, it is possible to perform cooling (mainly radiation cooling) of the substrate whose temperature is increased by ion beam irradiation. As a result, it becomes easy to suppress deformation, deterioration, deterioration, and the like of the substrate and the film on the substrate surface. In addition, by allowing the substrate to stand by in the standby chamber, the substrate can be promptly transferred to the next step without any delay, so that the throughput can be further improved.

  The invention according to claim 10 has the following further effect. That is, since the substrate transport line is folded back and a plurality of processing chambers are distributed before and after the folding, the total length of the ion beam irradiation apparatus can be kept small. This effect becomes more prominent when the number of processing chambers is large.

Is a schematic cross-sectional view of a portion of an embodiment of an ion beam irradiation apparatus according to the present invention, subsequent to FIG. 2 at the portion of the line A ₁ -A _1. Is a schematic cross-sectional view showing the remaining part of an embodiment of an ion beam irradiation apparatus according to the present invention, subsequent to Figure 1 with part of the line A ₁ -A _1. Figure 1 is a schematic longitudinal sectional view taken vertically to the ion beam irradiation apparatus shown in FIG. 2 in each chamber part, continued from FIG. 4 by line A ₂ -A ₂ section. Figure 1 is a schematic longitudinal sectional view taken vertically to the ion beam irradiation apparatus shown in FIG. 2 in each chamber part, following FIG. 3 by line A ₂ -A ₂ section. It is the schematic which shows an example of a board | substrate conveyance apparatus partially. It is the schematic which expands and shows the side surface of the board | substrate conveyance apparatus shown in FIG. It is a schematic perspective view which shows an example of a ribbon-shaped ion beam partially. It is a block diagram which shows an example of a control apparatus. It is a schematic plan view which shows the example by which the board | substrate conveyance line is turned in the middle.

  1 to 4 show an embodiment of an ion beam irradiation apparatus according to the present invention. In these drawings, the cross section of the wall surface of each chamber is represented by a bold line. Further, in each figure, three directions X, Y, and Z that are orthogonal to each other at one point are shown for easy understanding of directions.

  This ion beam irradiation apparatus is a chamber that is evacuated to vacuum, and is connected to each other in series, and includes a plurality of processing chambers 10 for performing ion beam irradiation on the substrate 2 respectively. The connection mode may be directly connected, may be connected via a vacuum valve, or may be connected via the standby chamber 8 and the vacuum valves 21 and 22 as in this example. good.

  The number of the processing chambers 10 is two in the illustrated example, but is not limited thereto, and may be three or more. In the case of providing three or more, for example, a combination of the processing chamber 10 of FIG. 1 and the standby chamber 8 adjacent to the lower side thereof (when provided) is combined with the processing chamber 10 of FIG. It is sufficient to insert only the required group between the two. When the standby chamber 8 is not provided, three or more processing chambers 10 may be connected next to each other in series.

  The substrate 2 is a generic name for materials to be processed, and is, for example, a glass substrate, a glass substrate with an alignment film, a semiconductor substrate, or another substrate. The planar shape is, for example, a quadrangle, but is not limited thereto, and may be a circle or the like.

  In this example, each substrate 2 is held and transported by a holder 34 (see FIGS. 5 and 6) described later. In the following example, an example in which one large substrate 2 is held in one holder 34 is shown, but a plurality of small substrates may be held in one holder 34.

  At one end side (the left end side in FIGS. 1 and 3) of the processing chambers 10 connected in series, an inlet-side vacuum preliminary chamber 6 for carrying the substrate 2 from the atmosphere into the processing chamber 10 on the one end side is provided. In this example, they are connected via a waiting room 8. The inlet side vacuum preparatory chamber 6 may be evacuated to vacuum or vented (returned to atmospheric pressure). In this example, two inlet side vacuum preliminary chambers 6 are provided. By doing so, the other inlet side vacuum preparatory chamber 6 can be evacuated when the one inlet side vacuum preparatory chamber 6 is returned to the atmospheric pressure state. There may be one chamber 6.

  On the other end side of the processing chambers 10 connected in series (the right end side in FIGS. 2 and 4), an outlet side vacuum preliminary chamber for carrying the substrate 2 out of the processing chamber 10 on the other end side into the atmosphere. 12 are connected via a waiting room 8 in this example. The outlet side vacuum preparatory chamber 12 may be evacuated to vacuum or vented (returned to atmospheric pressure). In this example, two outlet side vacuum preliminary chambers 12 are provided. By doing so, the other outlet side vacuum preliminary chamber 12 can be evacuated while the one outlet side vacuum preliminary chamber 12 is being returned to the atmospheric pressure state. One chamber 12 may be provided.

  In this example, the vacuum is exhausted between the inlet side vacuum preliminary chamber 6 and the adjacent processing chamber 10, between the processing chambers 10, and between the outlet side vacuum preliminary chamber 12 and the adjacent processing chamber 10. Each of the waiting rooms 8 is a waiting room 8 in which the substrate 2 is kept waiting.

  Although it is not essential to provide the standby chamber 8, if the standby chamber 8 is provided, the substrate 2 can be kept in the standby chamber 8, and therefore, the cooling of the substrate 2 whose temperature has been increased by ion beam irradiation. (Mainly radiation cooling) can be performed. As a result, it becomes easy to suppress deformation, deterioration, deterioration, etc. of the substrate 2 and the film on the substrate surface. Further, by allowing the substrate 2 to stand by in the standby chamber 8, the substrate 2 can be quickly transferred to the next step without any delay, so that the throughput can be further improved.

  Vacuum valves 16 to 27 are respectively provided between the inlet side vacuum preliminary chambers 6 and the middle of the atmosphere, between the rooms 6, 8, 10, and 12 and between the outlet side vacuum preliminary chambers 12 and the middle of the atmosphere. That is, each room is connected via a vacuum valve. Of course, the vacuum valves (for example, the vacuum valves 21 and 22) for partitioning the plurality of processing chambers 10 may not be provided. However, if they are provided, ion beam irradiation is performed with different ion species in the plurality of processing chambers 10. It is possible to prevent ionic species from being mixed when performing the above.

  The ion beam irradiation apparatus further includes at least one substrate 2 from the atmosphere along the X direction as indicated by an arrow B, from the atmosphere to the inlet side vacuum preliminary chamber 6, each standby chamber 8, each processing chamber 10, and the outlet. A substrate transfer device 30 (see FIG. 5 and FIG. 6) that transfers to the atmosphere through the side vacuum preliminary chamber 12 is provided. As described above in this example, each substrate 2 is held by a holder (which is also called a tray) 34 and is conveyed from the inlet side vacuum preliminary chamber 6 to the outlet side vacuum preliminary chamber 12 in an upright state.

  More specifically, in this example, the substrate transfer device 30 is configured to transfer a plurality of substrates 2 independently from each other from the atmosphere to the inlet side vacuum preliminary chamber 6, each standby chamber 8, each processing chamber 10, and the outlet side vacuum. It is conveyed to the atmosphere through the preliminary chamber 12. “Independent of each other” means that the plurality of substrates 2 are not always transported in the same manner at the same time, but the desired substrates 2 can be transported individually or the plurality of substrates 2 as necessary. Can be transported in conjunction with each other.

  Since the substrate transport device 30 transports each substrate 2 in an upright state as described above, it is possible to prevent particles from adhering to the processing surface of each substrate 2. Further, the footprint (occupied floor area) of each room and thus the overall footprint of the ion beam irradiation apparatus can be reduced.

  An example of the structure of the substrate transfer apparatus 30 will be described with reference to FIGS. FIG. 5 shows, as an example, one standby chamber 8 and a portion of the inlet-side vacuum preliminary chamber 6 and the processing chamber 10 sandwiching the standby chamber 8, but the other portions basically have the same structure. ing.

  The substrate transfer device 30 is a kind of roller conveyor, and includes a moving table 32, free rollers 36 to 38, a driving roller 39, a motor 40, and the like.

  The moving table 32 holds the holder 34 holding the substrate 2 in an upright state and moves it in the X direction, that is, in the direction of the arrow B (or the opposite direction if necessary).

  A large number of the free rollers 36 are arranged in the X direction near the bottom surfaces of the inlet side vacuum preliminary chambers 6, the standby chambers 8, the processing chambers 10, and the outlet side vacuum preliminary chambers 12. More specifically, as in the example shown in FIG. 5, a large number of free rollers 36 are arranged in the X direction near the bottom surface 46 in each room from near one end to the other end of each room. On this free roller 36, the moving table 32 holding the holder 34 to which the substrate 2 is attached freely moves in the X direction. The free rollers 37 and 38 guide the movement of the movable table 32.

  The above-described movement of the movable table 32 is performed, for example, by rotating the drive roller 39 via the rotating shaft 42 and its bearing portion 44 by the motor 40 provided outside the bottom surface 46. A plurality of drive rollers 39 are usually provided in the X direction at intervals corresponding to the length of the moving table 32 in the X direction in each of the rooms 6, 8, 10, and 12. In that case, a plurality of drive rollers 39 may be driven in conjunction with one motor 40. Alternatively, the free roller 38 facing each drive roller 39 may be a drive roller and driven in synchronization with the drive roller 39.

  When the substrate 2 is transported only in one direction in the X direction, the motor 40 may be rotated in one direction to move the movable table 32 in one direction. For example, this may be done in the inlet side vacuum preliminary chamber 6, the standby chamber 8, and the outlet side vacuum preliminary chamber 12. When the substrate 2 is transported in the reciprocating direction in the X direction, the motor 40 may be reciprocated to move the movable table 32 in the reciprocating direction. For example, in each processing chamber 10, the substrate 2 is transported in the X direction an odd number of times (for example, once, three times, five times, etc.) according to the required ion beam irradiation amount (for example, the dose amount in the case of ion implantation). You may do it. In this example, the length in the X direction of each processing chamber 10 is set to be about twice as long as that of other rooms so that such transfer can be handled.

  If two inlet side vacuum preliminary chambers 6 and two outlet side vacuum preliminary chambers 12 are provided as in this example, the substrate 2 is slightly moved in the Y direction in the standby chamber 8 adjacent to them. For example, a mechanism for performing center alignment for X-direction transport is provided as a part of the substrate transport apparatus 30, for example.

  However, the above structure of the substrate transport apparatus 30 is merely an example, and other known structures may be adopted.

  Substrate erecting devices 4 for raising the substrate 2 from a substantially horizontal state (see the substrate 2a) to a standing state (see the substrate 2b) are provided outside the entrances of the respective inlet side vacuum preliminary chambers 6. In this example, the substrate stand-up device 4 is also handled with the substrate 2 held by the holder 34 as an example. The standing substrate 2 (specifically, the holder 34 holding the substrate 2) can be sequentially carried into the corresponding inlet side vacuum preliminary chamber 6 from the atmosphere. When there is one entrance-side vacuum preliminary chamber 6, only one substrate upright device 4 may be used.

  Each of the substrate raising devices 4 may be a multi-joint robot having a function of raising the substrate 2 and a function of passing the substrate 2 to the entrance side vacuum preliminary chamber 6. The same applies to each substrate overturning device 14 described below.

  Substrate overturning devices 14 are provided outside the outlets of the respective outlet side vacuum preparatory chambers 12 to bring the substrate 2 from a standing state (see the substrate 2b) to a substantially horizontal state (see the substrate 2a). In this example, the substrate overturning device 14 is also handled with the substrate 2 held by the holder 34 as an example. Then, the standing substrate 2 (specifically, the holder 34 holding the substrate 2) can be sequentially carried out from the corresponding outlet side vacuum preliminary chamber 12 to the atmosphere. When there is one outlet side vacuum preliminary chamber 12, only one substrate overturning device 14 is required.

  According to the substrate upright device 4 and the substrate overturning device 14 as described above, the substrate 2 can be raised or tilted outside the vacuum preliminary chambers 6 and 12, so that the operation is performed in comparison with the case where the operation is performed in the vacuum preliminary chamber. Thus, each of the vacuum preliminary chambers 6 and 12 can be made small. In addition, since it is not necessary to provide a mechanism for performing the above operation in the vacuum preliminary chambers 6 and 12, generation of particles in the vacuum preliminary chambers 6 and 12 can be suppressed.

Referring also to FIG. 7, this ion beam irradiation apparatus further includes a ribbon having a longitudinal dimension W _Z across the substrate 2 in a direction Z intersecting the direction X in which the substrate 2 is transported. The ion beam 54 is supplied in a direction in which the main surface 55 of the ion beam intersects the transport direction X of the substrate 2 in each processing chamber 10, and in cooperation with the transport of the substrate 2, A plurality of ion beam supply devices 50 for irradiating the entire surface with the ion beam 54 are provided.

As a more specific example of each ion beam 54, when the rectangular substrate 2 is transported in parallel to the side as in this embodiment, each ion beam 54 has a dimension W _{Z in the} longitudinal direction of the substrate 2. This is a ribbon-like ion beam that is longer than the corresponding side (see FIGS. 3 and 4).

As an example in this example, each ion beam supply device 50 has a ribbon-like shape in which the dimension W _{Z in the} longitudinal direction is larger than the dimension W _{X in the} lateral direction from the ion source 52, as in the technique described in Patent Document 1. The ion beam 54 is extracted, and the ion beam 54 is irradiated to the substrate 2 after performing momentum analysis (for example, mass separation) through an analysis electromagnet 56 having a long gap length. The longitudinal dimension W _Z of the ion beam 54 extracted from the ion source 52 is substantially preserved on the beam trajectory.

An outline of the ion beam 54 is shown in an enlarged manner in FIG. Even if the ion beam 54 is ribbon-shaped, it does not mean that the dimension W _{X in the} X direction is as thin as paper or cloth. For example, the dimension W _{X in} the X direction of the ion beam 54 is about 30 mm to 80 mm, and the dimension W _{Z in the} Z direction is about 40 cm to 80 cm. The larger surface of the ion beam 54, that is, the surface along the YZ plane is the main surface 55.

  However, each ion beam supply device 50 is not limited to the above configuration, and may have another configuration. For example, an ion beam spreading (diverging) in a fan shape is extracted from a relatively small ion source, and the ion beam is subjected to mass separation through an analysis electromagnet in the middle of divergence, and then a beam collimator (for example, a quadrupole device, beam parallel). The substrate 2 may be irradiated after being converted into a parallel beam by a magnetized magnet or the like (see, for example, JP-A-2006-139996).

  With this configuration, the ion beam irradiation apparatus can perform a plurality of ion beam irradiations by the plurality of ion beam supply apparatuses 50 on the entire surface of each substrate 2. Thereby, processes such as ion implantation and ion beam alignment can be performed on the entire surface of each substrate 2.

  In this ion beam irradiation apparatus, one or more substrates 2 are transferred to the atmosphere by the substrate transfer apparatus 30 through the inlet side vacuum preliminary chamber 6, the plurality of processing chambers 10, and the outlet side vacuum preliminary chamber 12. In the meantime, since a plurality of ion beam irradiations can be performed on the entire surface of each substrate 2 using a plurality of ion beam supply apparatuses 50 in a plurality of processing chambers 10, various ion beams can be applied. Irradiation characteristics can be realized.

  Moreover, since the common inlet side vacuum preliminary chamber 6 and the outlet side vacuum preliminary chamber 12 are provided in the plurality of processing chambers 10, the inlet side vacuum preliminary chamber and the outlet side vacuum preliminary chamber are provided in the plurality of processing chambers, respectively. Compared to the case, it is possible to suppress an increase in the size of the ion beam irradiation apparatus and to suppress a decrease in throughput. The reduction in throughput can be suppressed because it is not necessary to pass through the vacuum preparatory chamber that requires a lot of time for evacuation and venting when the substrate 2 is carried in and out of each processing chamber 10. .

  Furthermore, since the substrate 2 does not pass through the atmosphere when transporting between the plurality of processing chambers 10, it is possible to suppress adhesion of particles to the substrate 2.

  The ion beam irradiation apparatus further controls at least the plurality of ion beam supply apparatuses 50 and further controls the substrate transport apparatus 30 as necessary, so that a plurality of ions by the plurality of ion beam supply apparatuses 50 are controlled. A control device 60 having a function of performing control for realizing finally required ion beam irradiation characteristics is provided for each substrate 2 by the total of the beam irradiation. When such a control device 60 is provided, it is possible to save labor and to easily realize finally required ion beam irradiation characteristics.

  A more specific example of the control function of the control device 60 will be described. The control device 60 controls the beam current of the ion beam 54 supplied from each ion beam supply device 50, and each substrate is calculated according to the total of a plurality of ion beam irradiations. 2 may have a function of performing control for realizing a finally required ion beam irradiation amount (for example, a dose amount in the case of ion implantation). Thereby, the finally required ion beam irradiation amount can be easily realized.

  More specifically, when there are n ion beam supply devices (n is an integer of 2 or more), each ion beam supply device 50 equally divides 1 / n of the finally required ion beam irradiation amount. The ion beam supply apparatus 50 may irradiate less, and the latter ion beam supply apparatus 50 may irradiate more. Even if the total irradiation amount is the same, the amount of gas (outgas) released from the surface of the substrate 2 may be reduced by irradiating less at the beginning.

  The control device 60 controls the energy of the ion beam 54 supplied from each ion beam supply device 50, and finally obtains a necessary implantation depth distribution for each substrate 2 by the total of a plurality of ion beam irradiations. You may have the function to perform the control implement | achieved. Thereby, the finally required implantation depth distribution can be easily realized. This is because the ion implantation depth in the surface layer portion of the substrate 2 can be controlled by the energy of the ion beam 54, so that the implantation depth distribution is controlled by performing irradiation with a plurality of ion beams having different implantation depths. Because it can be done.

  As a more specific example, for example, control may be performed such that ion beam irradiation with an ion beam 54 energy of 10 keV and ion beam irradiation with 15 keV are combined. Of course, other energy combinations may be used.

  1 to 4 again, the ion beam irradiation apparatus further measures the beam current density distribution in the longitudinal direction Z of the ion beam 54 supplied from each ion beam supply apparatus 50 in each processing chamber 10. A plurality of beam monitors 58 are provided.

  Each beam monitor 58 is a multi-point beam monitor having a plurality of beam detectors (for example, Faraday cups) arranged in parallel in the Z direction in this example, but is not limited to this. A structure in which the beam detector moves in the Z direction may be used.

  The control device 60 controls the beam current density distribution in the longitudinal direction Z of the ion beam 54 supplied from each ion beam supply device 50 based on the measurement information from each beam monitor 58, thereby irradiating a plurality of ion beams. Thus, each substrate 2 may have a function of controlling the ion beam irradiation amount distribution in the longitudinal direction Z of the ion beam to be uniform. For example, when the beam current density distribution measured by the beam monitor 58 on the upstream side of the substrate transfer is non-uniform, the beam at the ion beam supply device on the downstream side is set so that the beam current density distribution cancels the non-uniformity. Control the current density distribution.

  By using the control device 60 and the beam monitor 58 as described above, the ion beam irradiation distribution in the longitudinal direction Z of the ion beam (for example, in the case of ion implantation) with respect to each substrate 2 by the total of a plurality of ion beam irradiations. Can make the dose distribution) uniform.

  In order to control the beam current density distribution in the longitudinal direction Z of the ion beam 54 supplied from each ion beam supply device 50 by the control device 60, for example, a known beam current density distribution as described in Patent Document 1 is used. Adjustment means can be used. That is, the beam current density distribution adjusting means may be a means for controlling (a) the ion source 52 as a multifilament type ion source having a plurality of filaments in the Z direction and controlling the filament current flowing through each filament. (B) A means for controlling a beam current density distribution in the longitudinal direction Z of the ion beam 54 by providing a lens means such as an electric field lens or a magnetic lens in the path of the ion beam 54 may be used. Alternatively, (c) means for providing a plurality of movable shielding plates for shielding the ion beam 54 as described in JP 2007-172927 A and controlling the ion beam 54. But it ’s okay.

  As in the example shown in FIG. 8, the control device 60 has a plurality of individual control devices 62 each having a function of controlling each ion beam supply device 50 and a control that controls the plurality of individual control devices 62. And a general control device 64 having a function of performing the above. The overall control device 64 also controls the substrate transfer device 30 in this example.

  Since the control device 60 includes the individual control device 62 and the overall control device 64 having the control functions as described above, the division between the individual control of each ion beam supply device 50 and the overall control is clearly made. Therefore, it becomes easier to control each substrate 2 to finally realize necessary ion beam irradiation characteristics by the total of the plurality of ion beam irradiations by the plurality of ion beam supply devices 50. This effect becomes more prominent when the number of ion beam supply apparatuses 50 is large or when complex ion beam irradiation characteristics are realized.

  As in the example illustrated in FIG. 9, the substrate transport apparatus 30 may have a structure in which a transport line 47 that transports the substrate 2 is folded halfway. In that case, the plurality of processing chambers 10 are provided in a distributed manner on the transfer line 47 before and after the folding. In FIG. 9, only two processing chambers 10 are illustrated for simplification of illustration, but the number may be larger. Also in this case, the plurality of processing chambers 10 are connected to each other in series on the transfer line 47.

  In this case, each substrate 2 is inverted 180 degrees at the turn-back portion of the transfer line 47 so that the processing surface 3 of each substrate 2 faces the ion beam 54. For example, after the substrate 2 is rotated by 180 degrees around the shaft 48 as indicated by the arrow D, the substrate 2 may be moved straight as indicated by the arrow E and aligned with the center of the transport line 47 after the turn. Such an operation may be performed, for example, in the standby room 8. In this case, a room dedicated for folding is not required.

  If the substrate transport line 47 is folded halfway as described above, and the plurality of processing chambers 10 are distributed before and after the folding, the total length of the ion beam irradiation apparatus can be kept small. This effect becomes more prominent when the number of processing chambers 10 is large.

DESCRIPTION OF SYMBOLS 2 Substrate 4 Substrate stand-up device 6 Entrance side vacuum preliminary chamber 8 Standby chamber 10 Processing chamber 12 Exit side vacuum preliminary chamber 14 Substrate overturning device 30 Substrate transport device 34 Holder 47 Transport line 50 Ion beam supply device 54 Ion beam 58 Beam monitor 60 Control Device 62 Individual control device 64 Overall control device

Claims (10)

A plurality of processing chambers connected in series to each other for irradiating a substrate with an ion beam;
Connected to one end side of the serially connected processing chamber, and an inlet side vacuum preliminary chamber for carrying the substrate from the atmosphere into the processing chamber on the one end side;
Connected to the other end side of the processing chambers connected in series, and an outlet side vacuum preliminary chamber for carrying the substrate out of the processing chamber on the other end side into the atmosphere;
A substrate transfer apparatus for transferring one or more substrates from the atmosphere to the atmosphere via the inlet side vacuum preliminary chamber, the plurality of processing chambers, and the outlet side vacuum preliminary chamber;
A ribbon-like ion beam having a longitudinal dimension that traverses the substrate in a direction intersecting the direction in which the substrate is transported to each processing chamber, and the main surface of the ion beam is the main surface of the substrate in each processing chamber. A plurality of ion beam supply devices for supplying each of the ion beams to the entire surface of each of the substrates in cooperation with the conveyance of the substrates, respectively, in a direction intersecting with the conveyance direction;
An ion beam irradiation apparatus configured to perform irradiation with a plurality of ion beams by the plurality of ion beam supply apparatuses on the entire surface of each substrate.   Control that controls the plurality of ion beam supply devices, and finally realizes necessary ion beam irradiation characteristics for each of the substrates by the sum of the plurality of ion beam irradiations by the plurality of ion beam supply devices. The ion beam irradiation apparatus of Claim 1 provided with the control apparatus which has a function to perform.   The control device controls a beam current of the ion beam supplied from each ion beam supply device, and finally requires an ion beam irradiation amount for each substrate by totaling a plurality of ion beam irradiations. The ion beam irradiation apparatus according to claim 2, wherein the ion beam irradiation apparatus has a function of performing control to realize the above.   The control device controls the energy of the ion beam supplied from each ion beam supply device, and finally obtains a necessary implantation depth distribution for each substrate by the sum of a plurality of ion beam irradiations. The ion beam irradiation apparatus according to claim 2, which has a function of performing control to be realized. A plurality of beam monitors for measuring the beam current density distribution in the longitudinal direction of the ion beam supplied from each ion beam supply device in each processing chamber;
The control device controls the beam current density distribution in the longitudinal direction of the ion beam supplied from each ion beam supply device based on measurement information from each beam monitor, and calculates the total of a plurality of ion beam irradiations. 3. The ion beam irradiation apparatus according to claim 2, wherein the ion beam irradiation apparatus has a function of controlling the ion beam irradiation amount distribution in the longitudinal direction of the ion beam with respect to each substrate. The controller is
A plurality of individual control devices each having a function of controlling each of the ion beam supply devices;
The ion beam irradiation apparatus according to claim 2, further comprising an overall control device having a function of performing overall control of the plurality of individual control devices.   The ion beam irradiation apparatus according to claim 1, wherein the substrate transfer device transfers the substrate in an upright state from the inlet side vacuum preparatory chamber to the outlet side vacuum preparatory chamber. A substrate standing device is provided outside the entrance side vacuum preliminary chamber to stand the substrate from a substantially horizontal state to a standing state,
The ion beam irradiation apparatus according to claim 7, further comprising a substrate overturning device that falls the substrate from a standing state to a substantially horizontal state outside the outlet of the outlet side vacuum preliminary chamber.   A chamber that is evacuated between the inlet side vacuum preliminary chamber and the processing chamber adjacent thereto, between the processing chambers, and between the outlet side vacuum preliminary chamber and the adjacent processing chamber; 9. The ion beam irradiation apparatus according to claim 1, further comprising a standby chamber for waiting the substrate.   The substrate transport apparatus has a structure in which a transport line for transporting the substrate is folded back in the middle, and the plurality of processing chambers are provided in a distributed manner before and after the folding. Item 10. The ion beam irradiation apparatus according to any one of Items 1 to 9.

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