201246264 六、發明說明： 【發明所屬之技術領域】 本發明係關於通過向基板（例如平板顯示器用的玻璃 基板等）照射離子束，對基板進行例如離子注入處理、離 子束定向處理等處理的離子束照射裝置，更具體地說，關 於並用向基板照射帶狀（有時也稱為板狀，下面相同）離 子束以及把基板向與離子束的主面交叉的方向輸送的方式 的離子束照射裝置。該離子束照射裝置在向基板進行離子 庄入的情況下，也稱為離子注入裝置。 【先前技術】 為了提高平板顯示器等的生產率等，存在使基板大型 化的傾向。 口果土板大型化’則為了與其相適應來實施向該基板 照射離子束的處理，需要束寬大的離子束，為了與束寬大 的離子束相適應，離子源等離子束供給裝置要大型化。在 ^分析電磁鐵的情況下，該分析電顧也要大型化。如 d’i二化古則會引起與它們的製作、輸送、成本、容 、綱建錢寺有_各種各樣的問題。 1為抑制讀的離子源等大魏的技術之―，專利文 中記載了一種離子束照射裝置，使用長邊方向尺寸比 土反的對應邊的尺寸小的帶狀離 子束的主面蚊mm 絲板在與離 接爾产L 向上移動’在離子束照射的間歇至少 -種方式下上改變ΐ板位置及絲板轉動】80度中的 束照射:域連：=行離子束照射，由此把多個離子 在用該離子對基板的整個面進行離子束照射。 〆 …、子裝置處理的基板面内，隔著分割帶形成 201246264 有作為規定處_式的重鮮位Μ鱗元，使連接上述 多個離子束照射區域的部分位於上述分割帶上。 現有技術文獻 專利文獻1 :日本專利公開公報特開2009-134923號 (圖8-圖21 ) 為了提高平板顯示器等的生產率，存在使基板大型化 的傾向。因此要求離子照射步驟效率更高。作為解決對策 之-提出了串聯式離子束照射裝置的方案，該方案用兩台 離子束，給裝置對基板的上半部分和下半部分照射離子。 /旦是，在離子束供給裝置中的-台因處於維護中等而 不能使用的情況下’就不能對基板的整個面進行離子照 中存要解決的問題:兩台離子束供給裝置 ^士、 ^ *在某一步驟中，一台離子束供給裝置在照 所希束的情況下，也想可以對基板的整個面照射、 【發明内容】 和離子束照射裝置，在==…束照射方法 二分照射離子的串聯式離子束照射裝置中， 子束供給裝技在兩台離 射中途發生了;==始了處理’但在某一步驟的照 所希望的劑量Μ的情況下，也可崎基板的整個面照射 子二種離子束照射方法’其特徵在於，該離 具備兩、台料y離子束_裝置，上祕子束照射裝置 八A 口 束供給裝置，該兩台離子束供給裝置在^於 201246264 照射的處理室中分別向上述基板照射上 束，由各個上述離子束供給裝置進行的離 士 交又的方、/處理室巾’在與上述絲被輸送的方向 上，將帶狀離子束向該帶狀離子束的主 中的上述基板的輸送方向交叉的方向分別提 上述基板的輸送協_作，向上述 射201246264 6. TECHNOLOGICAL FIELD OF THE INVENTION The present invention relates to an ion which is subjected to treatment such as ion implantation treatment, ion beam orientation treatment, or the like by irradiating an ion beam to a substrate (for example, a glass substrate for a flat panel display or the like). The beam irradiation device, more specifically, ion beam irradiation in such a manner as to irradiate a substrate with a band-shaped (sometimes referred to as a plate shape, the same below) ion beam and transport the substrate in a direction intersecting the main surface of the ion beam Device. The ion beam irradiation device is also referred to as an ion implantation device when ion implantation is performed on the substrate. [Prior Art] In order to increase the productivity and the like of a flat panel display or the like, the substrate tends to be enlarged. In order to increase the size of the ion beam, a large beam of ion beam is required for the irradiation of the ion beam to the substrate, and the ion beam plasma beam supply device is increased in size in order to accommodate the beam beam having a large beam width. In the case of analyzing the electromagnet, the analysis is also required to be enlarged. For example, d’i Dihua will cause various problems with their production, transportation, cost, capacity, and construction. 1 is a technology for suppressing the read ion source, etc., and the patent document describes an ion beam irradiation apparatus which uses a main-shaped mosquito wire of a ribbon ion beam having a length in a longitudinal direction smaller than a corresponding side of a soil opposite. The plate is moved upwards with the L-distribution L to change the position of the chopping plate and the rotation of the silk plate in at least one mode of intermittent ion beam irradiation. Beam irradiation in 80 degrees: domain connection: = ion beam irradiation, thereby A plurality of ions are ion beam irradiated on the entire surface of the substrate with the ions. 〆 ..., the surface of the substrate processed by the sub-device is formed by a dividing belt. 201246264 There is a fresh-spot squad which is a predetermined type, and a portion connecting the plurality of ion beam irradiation regions is located on the dividing belt. CITATION LIST Patent Document 1: Japanese Laid-Open Patent Publication No. 2009-134923 (Fig. 8 - Fig. 21) In order to increase the productivity of a flat panel display or the like, the substrate tends to be increased in size. Therefore, the ion irradiation step is required to be more efficient. As a countermeasure, a tandem ion beam irradiation apparatus has been proposed which irradiates ions to the upper and lower portions of the substrate by means of two ion beams. / If the stage in the ion beam supply device is in a state of being unusable and cannot be used, the problem that the entire surface of the substrate cannot be ionized is solved: two ion beam supply devices, ^ * In a certain step, an ion beam supply device can also irradiate the entire surface of the substrate in the case of irradiation, [invention] and ion beam irradiation device, in the ==... beam irradiation method In a tandem ion beam irradiation apparatus in which two ions are irradiated, the sub-beam supply assembly technique occurs in the middle of two separations; == the processing is started, but in the case of the desired dose of a certain step, it is also possible. The entire surface of the substrate is irradiated with two kinds of ion beam irradiation methods, which are characterized in that the separation device is provided with two materials, a y ion beam device, and an upper beam beam irradiation device, an A beam supply device, and the two ion beam supplies are provided. The apparatus irradiates the substrate with the upper beam in the processing chamber irradiated by 201246264, and the side and/or the processing towel 'by the respective ion beam supply device are in the direction in which the wire is conveyed. A direction intersecting the conveying direction of the substrate main shaped beam to ribbon ion beam in the substrate conveyance respectively of _ as coordination, to the radio
2制=離:束物中，在上述離子束照S 置處於不能進行離子束照射的狀態 =’並進行了-個往返的離子束照射處理之後= =動機構’使上述基板轉動1δ〇度，然後將上述』 入上述離子束照射裝置，通過一個往返的離子束昭 射處理’從而對上述基㈣整個面進行離子束照射。‘、 上二明’在用兩台離子束供給裝置對基板的 中二Γ二ί:，射離子的串聯式離子束照射裝置 二裝置處於停止中，也可以自動繼 、，、對基板的}個面進行規定劑量的照射處理。 ^卜，本發明還提供-種離子束照射方法，其特徵在 於，忒離子束照射方法使用離子束 :射裝置具備兩台離子束供給裝離= 基板進行離子束照射的處理室中分別向：：基 ΐϋίΓ束’由各個上述離子束供給裝置進行的離 2=^自的範圍是上述基板的上半部分和 上述料束照射裝置在上述處理室中，在血上述 达的方向交叉的方向上’將帶狀離子束向該帶狀ς子束的 5/22 201246264 =:上2理室中的上述基板的輪送方向交又的方向分 個_ ’、上述基板的輸送協調動作’向上述基板的整 =、、射離子束’在上㈣子束照概置中，在上述離子 =、射裳置的控職置接㈣上述兩台離子束供給裝置士2 system = off: in the beam, in the state where the ion beam irradiation S is in a state in which ion beam irradiation is impossible = 'and after a round-trip ion beam irradiation treatment == moving mechanism' rotates the substrate by 1δ〇 Then, the above-mentioned ion beam irradiation device is subjected to ion beam irradiation on the entire surface of the base (four) by a reciprocating ion beam irradiation process. ',上二明' in the use of two ion beam supply devices to the substrate in the middle of the two:, the ion-series series ion beam irradiation device two devices are in the stop, can also automatically continue,, on the substrate} The individual faces are irradiated with a prescribed dose. The invention also provides an ion beam irradiation method, characterized in that the erbium ion beam irradiation method uses an ion beam: the radiation device has two ion beam supply and is separated from the substrate to perform ion beam irradiation in the processing chamber: The range of the distance from the above-mentioned ion beam supply device is the upper half of the substrate and the direction in which the beam irradiation device intersects in the direction in which the blood reaches the above-mentioned processing chamber. '5/22 201246264 = the band-shaped ion beam to the band-shaped beam of dice; the direction in which the above-mentioned substrate in the upper chamber is in the direction of the transfer direction is _ ', the transport coordination operation of the substrate is described above] The whole of the substrate, the ion beam 'in the upper (four) sub-beams, in the above-mentioned ion =, the shots placed on the control position (four) the above two ion beam supply devices
的信號，並開始離子照射處理之後，當在任二台I 福子束供給裝置中’離子束照射在處理 口 異常結束時，向上述離子束昭 、月匕订 S ^ ^ . α. 果…、射裝置的上述控制裝置發送 、騎異常位置信息錢和 虎亚在進行了-個往返的離子束 = 新放入上述離子束照射裝置，上^^後將上逑基板重 控制裝置識別到上述基板的哪上述 子束停土 射離子束後，使上述離 束攸而對上述基板的整個面進行離子束昭射。隹子 備沒即使在兩台離子束供給裝置處理準 =常下，個步·_子束供給ί 子，並可以自動繼續對基_=僅1 未=區域照射離 處理。 ⑪物規㈣量的照射 為了使離子束停止，可以磨 離子源的電弧電源，#$上述離子束供給裝置的 離子源的引出電斷装置的 供給裝置的離子源的電弧電源、^者γ斷開上述離子束 按照上述的發明，可以使均離電源。 裝置向元成了所希望的劑量注入的範圍照射離 201246264 子采 此外，本發明還提供— 於，上述離子束照射裝置包 子束照射裝置，其特徵在 用於向基板進行離子^照二處子束供給裝置’在 上半部分和下半部分照射上=中分別向上述基板的 板轉動機構，在上述處理室 ，控姆置；以及基 向交叉的方向上，將帶狀離子束^述基板被輸送的方 上述處理室中的上述基板_ —▼狀離子束的主面與 供，並盥上、f其鉍沾:，輸运方向交又的方向分別提 照射離子束’在上述控制物—台 == 接收到該離子束供給裝置處於離子束照射不二 ，有完成準備驗號，並進行了—個往返的離子 处理後，控制上述基板轉動機構，使上述基板轉動18〇度， 然後將上述基板重新放入上述離子束照射裝置，進行一個 往返的離子束照射處理’從而對上述基板的整個面進行離 子束照射。 按照本發明，在用兩台離子束供給裝置對基板的上半 邓刀和下半部分照射離子的串聯式離子束照射裝置中，即 使在一台離子束供給裝置停止的情況下；或者在兩台離子 束供給震置處於運轉並開始了處理，但在某一步驟的照射 中途發生了異常的情況下’也可以對基板的整個面照射所 希望的劑量。 【實施方式】 具體實施方式 [實施例] 下面參照附圖對本發明的一個實施方式進行說明。 7/22 201246264 、如圖1所示’離子束照射裝置1〇〇用於進行離子照射， 在被真空排氣的處理室1G㈣祕平板顯示料的大型美 板2照射離子束B。在此，本實施方式的基板2例如包^ 玻璃基板、具有定肖賴㈣基板、半導縣板以及其他 的，照射離子束Β的基板。此外，基板2的形狀為長方带 的薄板，但是也可以是圓形。 ’ 上述離子束照射裝置100包括：處理室1〇，是被真咖 在該處理室10内向基板2照射離子束Β ;待； 室8，是與上述處理室1〇相鄰的室，等待處理的基板2: έ亥待，室8内待機；以及真空預備室6，位於上述待機室8 和大氣之間’詩放人取出基板2。各室大體為中空的長方 體形，各室之間的連接部由真空閥G (閘閥）隔開。、 更具體地說’上述離子束照射裝置1〇〇包括：輸送機 構3 ’在上述真空預備室6、上述待機室8、上述處理室1〇 中以兩列的方式把基板2分別向相反的方向輸送；控制部， 例如根據上述輸送機構3上的基板2的 制；離子祕料置5G(a)和軒綠給裝置控 在上述處理室1〇内向由上述輸送機構3輸送的基板9 =離子束B ;以及基板轉動機構7G，在大氣—側使基板After the signal is started, and after the ion irradiation treatment is started, when the ion beam irradiation is abnormally ended at the processing port in any two I Fukun beam supply devices, the above-mentioned ion beam is displayed, and S ^ ^ . α. The above-mentioned control device of the device transmits and rides the abnormal position information money and the tiger beam is subjected to a round-trip ion beam = newly placed into the ion beam irradiation device, and the upper substrate weight control device is recognized to the substrate After the above-mentioned sub-beams stop the ion beam, the ion beam is irradiated onto the entire surface of the substrate by the off-beam. The dice are not ready to be processed even if the two ion beam supply devices are normal = normal, and the sub-beams are supplied to the ί sub, and can automatically continue to illuminate the base _= only 1 un= area. 11 (4) Irradiation of the amount of matter (4) In order to stop the ion beam, the arc source of the ion source can be ground, and the arc source of the ion source of the supply device of the ion source of the ion beam supply device is turned off. The above ion beam can be opened in accordance with the above invention. The device is irradiated to the range of the desired dose injection. The present invention further provides the ion beam irradiation device bun beam irradiation device, which is characterized in that the ion beam is applied to the substrate. The supply device 'in the upper half and the lower half illuminate the plate rotation mechanism respectively to the substrate, in the processing chamber, the control device; and the direction in which the base direction intersects, the ribbon ion beam substrate is The transporting side of the above-mentioned substrate in the processing chamber of the main surface of the ion beam and the supply of the ion beam, and the sputum, the direction of the transport direction, respectively, the direction of the irradiation of the ion beam 'in the control object - The station == receives the ion beam supply device in the ion beam irradiation, completes the preparation test, and performs a round-trip ion treatment, controls the substrate rotation mechanism to rotate the substrate by 18 degrees, and then The substrate is placed in the ion beam irradiation device again, and a reciprocating ion beam irradiation process is performed to ion beam irradiation on the entire surface of the substrate. According to the present invention, in a tandem ion beam irradiation apparatus for irradiating ions to the upper half of the substrate and the lower half of the substrate by two ion beam supply means, even if one ion beam supply means is stopped; or in two The ion beam supply is in operation and the processing is started. However, when an abnormality occurs in the middle of the irradiation in a certain step, the entire surface of the substrate may be irradiated with a desired dose. BEST MODE FOR CARRYING OUT THE INVENTION [Embodiment] An embodiment of the present invention will be described below with reference to the drawings. 7/22 201246264 As shown in Fig. 1, the ion beam irradiation apparatus 1 is used for ion irradiation, and the ion beam B is irradiated onto the large-sized sheet 2 of the processing chamber 1G (4) of the vacuum exhausted liquid. Here, the substrate 2 of the present embodiment includes, for example, a glass substrate, a substrate having a predetermined substrate, a semi-conducting plate, and the like, and a substrate that irradiates the ion beam. Further, the shape of the substrate 2 is a thin strip of a rectangular strip, but may be a circular shape. The ion beam irradiation apparatus 100 includes a processing chamber 1 that is irradiated with an ion beam by the real coffee in the processing chamber 10; a chamber 8 is a chamber adjacent to the processing chamber 1,, waiting for processing Substrate 2: Waiting for the room, standby in chamber 8; and vacuum preparation chamber 6, located between the above-mentioned standby room 8 and the atmosphere. Each chamber is generally hollow and has a rectangular shape, and the joints between the chambers are separated by a vacuum valve G (gate valve). More specifically, the above-described ion beam irradiation apparatus 1 includes a transport mechanism 3' in which the substrate 2 is opposed to each other in two rows in the vacuum preparation chamber 6, the standby chamber 8, and the processing chamber 1 Directional transport; control unit, for example, according to the substrate 2 on the transport mechanism 3; the ion secret material 5G (a) and the green control device are controlled in the processing chamber 1 to the substrate 9 transported by the transport mechanism 3 = Ion beam B; and substrate rotating mechanism 7G, the substrate is made at the atmosphere side
XY 下面對各部分進行說明。在下面的說明中使用右 的坐標系進行說明，該右手系的坐標系將水平面設為 平面、將鉛垂方向向上設為z軸。 、.上述輪送機構3具有相互分開的平行的—對執道，沿 上述的各個執道在使相同形狀的基板2的面板部與上述二 道平仃、且使各執道上的基板2之間麟平行的姿勢的狀 8/22XY The following describes each part. In the following description, the right coordinate system will be described. The coordinate system of the right-handed system sets the horizontal plane to the plane and the vertical direction to the z-axis. The above-mentioned wheel transfer mechanism 3 has parallel-to-parallel paths, and the plate portions of the substrate 2 of the same shape and the above-mentioned two channels are flat along the respective paths described above, and the substrates 2 on the respective tracks are made. Shape 8/22 of parallel posture
201246264 態下，使基板2相互向相反方向行進。 更具體地說，在本實施方式中，上述一對軌道包括第 軌道31和第二執道32 ,第一執道31使基板2從基板立 起f置4A起按上述真空預備室6、上述待機室8、上述處 理室1〇的順序的行進方向行進，上述基板立起裝置4A把 未處理的基板2從放成水平態立起；第二鏡32使基 第；'執道31相反的順序通過各室後到達基“ 牡、 的/、订進方向相反的方向上行進，上述基板容納 = 處理後的基板2從立起的狀態到再放成水平狀態 來進仃存放。如圖1所示’在第-執道31上和第二軌道32 上’各基板2在立起的狀態下’在使面板部保持朝向 方向的狀態下在X軸方向上輸送。 個述輸送機構3在上述處理室1Q岐基板2從 道移動。具體地說，上述輸送機们 有弟二軌運33 ’該第三轨道33位於處理 =位，板2從第一執道31向第二 = 基板2在處理室1〇内口形轉彎。 謂伲 此外，在上述處理室1〇内，從作為與上述面板部垂直 的方向的Υ軸方向看，各執道上的基板 叠位置則’大體重疊。具體地說，如圖〗 位於處理至1G大體中央的重疊位置34處，使 上的基板2的輪廓和第二軌道32上的基板 = 上述控制部是所謂的計算機，該控制部例^制1 =的輸达速度和位置、根據各基板2的位置控制設置ς 間的真空閥G的開關、控制基板轉 ° 離子束Β的開關等。 再川彳工制 9/22 201246264 i的上賴子束供給裝置5G(a)和料靜 ⑻將帶狀離子束b向下述位置照射，該位置J ' 執道上行進的基板2橫穿主面Ba的位 疋在上述 上述離子束行進方向平行的側面之中大的^在面也^ 述各離子束供給裝置進行詳細敘述 灶 子束B經過分析磁鐵56，被進行了動原52射出的離 -作為帶狀離子束射出。二==過狹縫 稱為板狀等）在離子束的斷面中，長邊的子(也 邊的長度Wx。 、又~2遠大於短 上述㈣子束B·位於±赌4 分別通過錄上述重4位置3 Μ基板2， 向相反的方向-側。在此，在本和與行進方 疊位置34的行進方向一側（ 工 位於上述重 供給裝置50(b)向基板233射^^·為右側）的離子束 方向相反的方向-側（在圖面上子位於與行進 裝置50(a)向基板2_第二^束·^)的離子束供給 此外，如圖1 (b)你-, 的Y轴方向看，各離子束二=為與面板部垂直的方向 離子束B對基板2的面板部的整體于照射，通過各 句話說’從作為與上述面 T ?束B掃描。換 向的X軸方向看，各離子庚订且與上述軌道平行的方 把離子束B向基板2照射，、、目鄰並大體接觸。通過這樣 相反的方向僅輸送—次其 通過向行進方向或與行進方向 整個區域。 & &2’絲_子;主人到面板部的In the state of 201246264, the substrates 2 are caused to travel in opposite directions to each other. More specifically, in the present embodiment, the pair of rails includes a first rail 31 and a second lane 32, and the first lane 31 causes the substrate 2 to rise from the substrate f by 4A, and presses the vacuum preparation chamber 6, the above The standby chamber 8 and the processing chamber 1〇 travel in the order of travel, the substrate raising device 4A raises the unprocessed substrate 2 from the horizontal state; the second mirror 32 makes the base; The sequence travels through the respective chambers and arrives in the direction of the "muth", and the direction of the advancement is opposite. The substrate is accommodated = the substrate 2 after the processing is stored from the rising state to the horizontal state to be stored. The 'each substrate 2 is erected on the first and third tracks 32' in the state of holding the panel portion in the direction of the X-axis. The transport mechanism 3 is The processing chamber 1Q 岐 the substrate 2 moves from the track. Specifically, the conveyor has a second track 33 'the third track 33 is at the processing= position, and the board 2 is from the first way 31 to the second = the substrate 2 In the processing chamber 1〇, the mouth shape turns. In addition, in the above processing chamber 1〇, from the work When viewed in the direction of the y-axis in the direction perpendicular to the above-mentioned panel portion, the position of the substrate stack on each of the tracks is substantially overlapped. Specifically, as shown in the figure, at the overlapping position 34 of the center of the 1G, the upper substrate 2 is placed. The outline and the substrate on the second rail 32. The control unit is a so-called computer. The control unit exemplifies the transmission speed and position of 1 =, and controls the opening and closing of the vacuum valve G according to the position of each substrate 2. Controlling the substrate to turn on the ion beam Β switch, etc. The upper beam supply device 5G (a) and the material static (8) of the Harbin Co., Ltd. 9/22 201246264 i illuminate the ribbon ion beam b at a position J. 'The position of the substrate 2 that travels on the track crossing the main surface Ba is larger than the side surface parallel to the direction in which the ion beam travels. The ion beam supply device is described in detail. The beam B passes through the analysis magnet. 56. The distance from which the moving element 52 is emitted is emitted as a ribbon ion beam. The second == the over slit is called a plate shape. In the cross section of the ion beam, the long side is also the length Wx. , and ~2 is much larger than the short (4) sub-bundle B · located in ± bet 4 respectively The above-mentioned heavy 4 position 3 Μ substrate 2 is recorded in the opposite direction-side. Here, on the side of the traveling direction with the traveling side stack position 34 (the work is located at the above-described heavy supply device 50(b) to the substrate 233 ^^· is the right side of the ion beam direction opposite direction - side (on the surface of the figure is located with the traveling device 50 (a) to the substrate 2_ second beam · ^) ion beam supply, in addition, as shown in Figure 1 ( b) When you look at the Y-axis direction, each ion beam 2 = the direction perpendicular to the panel portion, the ion beam B is irradiated to the entire panel portion of the substrate 2, and by the words "from the above-mentioned surface T? B-scan. When viewed in the X-axis direction of the commutation, each ion is twisted and parallel to the above-mentioned track, and the ion beam B is irradiated to the substrate 2, and is in close contact with each other. By such a reverse direction, only the entire area is conveyed by the direction of travel or the direction of travel. && 2' silk _ child; owner to the panel
對於這樣構成轉子I 圖來說明離子照射時的叙^、、衣直100’參照圖3的動作 動作。此外，在本動作說明中，把 10/22 201246264 在處理室】〇内在第-執道31上、第二執道32上輪送的基 J'也分別稱為第一基板、第二基板。在基板2從第一二 道32上的情況下，把其_·基 但是第—基板和第二基板指的是相同的 圖3(a)至圖3⑺說明了基於時間變化的基板 #如圖3 (a)所示’首先，送人處理室1()内 在第二離子束B的左側待機。通過各離子束B進二 離f照射的基板2從第—執道31移到第二執道32上，P 到第:=2η上3,第二基板在第-離子束B右側待機。 …、'後，如圖3⑻所示，第一基板向第二離 第面板部的下半部分區域被照射離子。同時， 掃描的位置移動，面板部的上半The configuration of the rotor I in this manner will be described with reference to the operation of Fig. 3 in the case of ion irradiation. Further, in the description of the operation, the base J' in which the 10/22 201246264 is transferred in the processing chamber 第 to the first executor 31 and the second trajectory 32 is also referred to as a first substrate and a second substrate, respectively. In the case where the substrate 2 is on the first two lanes 32, the base substrate and the second substrate are the same as those shown in FIGS. 3(a) to 3(7). 3 (a) shows that 'first, the inside of the processing chamber 1 () is placed on the left side of the second ion beam B. The substrate 2 irradiated by the ion beam B into the second f is moved from the first channel 31 to the second channel 32, P is on the ==2η3, and the second substrate is on the right side of the first ion beam B. After that, as shown in Fig. 3 (8), the first substrate is irradiated with ions to the lower half of the second off-panel portion. At the same time, the position of the scan moves, the upper half of the panel
如圖3 (c)所示，各基板2在各自的方向上 果對+個區域轉子騎結束，職向看，各σ 2在，第—離子束β和第二離子束β之間的重疊H H二因此根據圖可以確定:不會出現位於；則的第 基板遮域該照射位於後_第二基板的離 其/後如圖3⑷所示，此次與圖3(b)相反，第一 土板向弟-離子束Β掃描的位置移 區域被照射離子。啊，第二 部分 位置移動，面板部的下半部分區域被 &如果各基板2完成通過離子束B，則如圖3() 的达出达入口行進。此時’各基板2的面板部的整個 11/22 201246264 區域都被照射了離子。 最後，如圖3 (f)所示，打開真空閥G，把第二基板 從處理室1G送到待機冑8，同時送人新的第—基板。同時， 位於處理f 10最裡邊部位的第—基板沿第三執道％移動 到第二執道32。此後，反復進行圖3 (a)至圖3⑴的步 驟。即，通過使基板2在第一執道31上行進，向面板部的 整個區域照射-次離子後，通過使基板2在第二執道^上 行進，再向面板部的整個區域注入一次離+。因此，可以 使向基板2 子量㈣更彡，或者即使輸送速度變 !、在從處理至10出來時，也能夠以所希望的離子濃度進 行了注入。 心上述的離子束照射裝置1〇〇，由於使各基板2如 互相反的方向行進’並使各離子束B避開在處理室内€ ^且位置*34重s的基板2 ’使各離子束B分別在重疊位^ 、'的行進方向-側和與行進方向相反的方向—側通過，戶 以处離子束B看，可以防止位於前側的基板2遮擔位於卷 ^的基板2從而導致變得不能照射離子束B。此外，在^ 置34以外，可以總是使兩個離子束b向各基板2照射 因此，由於對於各離子束B而言，大體總是同時向赤 Ί2照射離子，所以與以往用某—個離子束^ 一塊场 ί订處理的情況相比，可以大幅度提高單位時間的處理數 此外，在本實施方式中，由於基板2在處理室ι〇内從 執道31移動到第二執道32上，總共進行四次離子注 ，所以可以大幅度增大對一塊基板2的離子照射量。 此外，從純道平行的方向看兩鋪子束Β，由於各 束Β相卻並大體接觸，所以通過使基板2通過兩台離As shown in Fig. 3(c), each of the substrates 2 ends in the respective directions with respect to the + region rotor ride, and the position of each σ 2 is overlapped between the first ion beam β and the second ion beam β. HH 2 can therefore be determined according to the figure: no substrate is present; then the substrate is in the back surface of the second substrate, as shown in Figure 3 (4), this time is opposite to Figure 3 (b), first The soil plate is irradiated with ions to the position shifting region of the scan of the ion beam. Ah, the second part moves, and the lower half of the panel portion is & if each substrate 2 completes the ion beam B, it reaches the entrance as shown in Fig. 3(). At this time, the entire 11/22 201246264 region of the panel portion of each substrate 2 is irradiated with ions. Finally, as shown in Fig. 3 (f), the vacuum valve G is opened, and the second substrate is sent from the processing chamber 1G to the standby port 8 while a new first substrate is delivered. At the same time, the first substrate located at the innermost portion of the processing f 10 moves along the third lane % to the second lane 32. Thereafter, the steps of Figs. 3(a) to 3(1) are repeated. That is, by causing the substrate 2 to travel on the first lane 31, the entire region of the panel portion is irradiated with the secondary ions, and then the substrate 2 is advanced on the second lane, and then the entire region of the panel portion is injected once. +. Therefore, it is possible to make the amount of the substrate 2 (four) more entangled, or even if the conveyance speed is changed to ?, and when it is processed from 10 to 10, it can be injected at a desired ion concentration. The above-mentioned ion beam irradiation apparatus 1 〇〇, because each substrate 2 travels in the opposite direction of each other and causes each ion beam B to avoid the substrate 2 in the processing chamber and the position *34 is s. B passes through the overlapping direction ^, the direction of travel of the ', and the direction opposite to the direction of travel, respectively, and the household can see that the substrate 2 on the front side shields the substrate 2 located on the roll and causes the change. It is impossible to illuminate the ion beam B. Further, in addition to the arrangement 34, the two ion beams b can always be irradiated to the respective substrates 2, and therefore, since the ion beams B are always irradiated with ions to the red crests 2 at the same time, it is used in the past. In the case of the ion beam, the number of processes per unit time can be greatly increased as compared with the case of one field process. Further, in the present embodiment, since the substrate 2 is moved from the track 31 to the second track 32 in the process chamber ι. In the above, a total of four ion implantations are performed, so that the amount of ion irradiation to one substrate 2 can be greatly increased. In addition, the two shop bundles are viewed from the direction parallel to the pure track, and since the respective bundles are in contact with each other, the substrate 2 is passed through two stages.
S 201246264 子束t、、、’s凌置（分別向基板2的上半部分和下半部分照射 離子束\可以向基板2的整個面照射離子束。因此，即使 基板j是大型的，縱然不使用離子束斷面的長邊非常長的 一個帶狀離子束B，也可以縣板2的面板部整個區域大 體均勻地照射離子。 /此外，在上述真空預備室6和上述處理室1〇之間設置 有待機室8，此外由於各室通過真空閥G隔開，所以容易 =上述處理室1G内的真空度，並可以容易防止有毒氣體 寺向外部洩漏。 如圖4所示 本貫施方式的離子源52是用於導入離子 源氣體並在内部生成轉子體的容器，軒源Μ包括：等 離子體生成容器78，形成有離子引出口；多個磁鐵， 在寺離子體生成容器78的外部，在該等離子體生成容哭Μ 切磁場（更嚴格地說為多會切磁場，也稱為多 f，一個以上（在本實施方式為多個）的燈絲79,構 體生成容器78内通過電子爲擊使離子源氣體電 的電離部件；引出電極系统77,設ί 用生成容器78的離子引出σ附近’通過電場的作 用使離子束Β加速從而從等離子體引出離子束Β。 乍 此^’ Μ電極㈣77具有從最靠近等離子體 下游-側配置的等離子體電極77卜引 = 和接地電極774。此外，在轉子體電極7 = 子粗生成容器7S之間設置有作為使 ㈣ 。在等離子體電極771〜== 電極之間例如通過絕料W使它們之間相 74各 如圖4所示，連接有離子源部的六種電電療 13/22 201246264 72連接在燈絲79和等離子體生成容琴π 甘 生等離子體的起狐電源。引出電源74連接料 子體生成容器78之間，把在等離子體生成容哭78 〇^aitt^75 ,, :::774之間，把離子力趣的離子^ 離^上義說明巾’是在兩⑽子束供給裝置50 U)和 =2匕〇㈦正常運轉狀態下的離子束照射。但 ^牛’、°離子束供給裝置停止的情況下；或在處 里=途離子束供給裝置發生異常，只能到中途為止； 照射的情沉下’也要求對基板的整個面照射所希 本發明知:供了貫現這種要求的方法和裝置。 離子束照㈣關科科束餘裝置 止的情況的實施例進行說明。 了 參照® 5、圖6，在_處理開鱗接㈣某個離 ('給裝置沒有完成準備的信號後，把基板2立起，姑由直 ，預備室6 ’麟子束供給裝置5〇 (a)騎基板2 ^下側 (步驟1〜步驟4)。由於離子束供給農置5〇 (b)停止 進行照射處理（步驟5 )。將基板2從第一執道3丨向第二執 道32橫移，並輸送到離子束供給裝置5〇 (b)，但不進行照 射處理（步驟6〜步驟8)。接著，用離子束供給裝置5〇(c 照射基板2的下側，將基板2經由待機室8輸送到真空 備室6 (步驟9〜步驟11)。對真空預備室6通氣，然= 巴 基板2送出到大氣一側後，通過基板轉動機構7〇把基板2 轉動ISO度，再將基板2放入真空預備室6 (步驟12〜步 14/22 201246264 nr離子束供給裝置5〇 (a)照射基板2的下側兩次 起驟23)，使基板2成為水平後將基板2存放 給裝置^⑻=過上義離子束㈣’即使在離子束供 τ止的情況下，也可以對基板2的整個面照 射所希望的劑量。 、 Ϊ著，對在離子束照射處理開始時兩台離子束供給裝 置正常運轉，但在去路上_子束供給裝置50 (b)的^射 在處，中發生了異常的情況下的實施例進行說明。’ 芩照圖7、圖8，在照射處理開始時接收到哪個離 供給褒置鱗備好了的錢後，把基板2立起，經由真空 預備室6’用離子束供給裝置別⑷照射基板2的下側 驟1〜步驟4)。,然後離子束供給裝置50(b)的照射處理在 ，途發生了異常（步驟5 )。將基板2從第一執道3】橫移到 第二執這32，並輸送雜子束供給|置5()⑻，但不 照射處理（轉6〜步驟8)。然後用離子束供給裝置 照射基板2的下側’然後將基板2經由待機室8輸送到直 空預備室6 (步驟9〜步驟η )。對真空預備室6通氣，然 後把基板2送到大氣-側後，通過基板轉動機構 2轉動刚度，再將基板2放入真空預 ^ 東―⑷對未照射 束（下側）’在已照射區域使離子束停止（步驟16)。然後， 雖然把基板2輸送到離子束供給裝置5〇 (b)，但不進明 射處理（步驟π)。把基板2從第一執道31橫移到第= 道32，並把基板2輸送到離子束供給裝置％ (b),彳曰不，隹 行照射處理（步驟18〜步驟2 〇 )。用離子束供給m 〇不(^ 對基板2的下側進行照射處理（步驟21)後，經由待機室 15/22 201246264 後空賴室6，對真空賴室6通氣，然 存放j 到大氣—側，使絲2成為水平後將基板2 〜步驟⑷。通過上述的離子束照射， 生異常^束供給裝置5G(b) _子束簡錢理中途發 $叫It況下，也可以對基板2的整個㈣射所希望的 ^了使離子束停止’要斷開上述離子束供給裝置的離 ^源的電弧電源72 ’或者要斷開上述料束供給裝置的離 源的引出電源74和加速電源75，或者要斷開上述離子 供給裝置的離子源的電弧電源72、引出電源74以及加速電 源75。 接著，對在離子束照射處理開始時兩台離子束供給裝 置正常運轉，但在歸路巾⑽子束供給裝置％⑻的照射 在處理中途發生了異常的情況的實施例進行綱。參照圖 9、圖10,在照射處理開始時接收到哪個離子束供給裝置都 準備好了的仏號後，把基板2立起，經由真空預備室6，用 離子束供給裝置50 (a)照射基板2的下側（步驟丨〜步驟 4)。然後用離子束供給裝置5〇 (b)照射基板2的上側（步 驟5)。將基板2從第一執道31橫移到第二軌道32，用離 子束供給裝置50 (b)對基板的上側的離子束照射在中途發 生了異常（步驟6〜步驟8 )。然後用離子束供給裝置5〇 ( a) 照射基板2的下側，經由待機室8將基板2輸送到真空預 備室6 (步驟9〜步驟11)。對真空預備室6通氣，然後把 基板2送到大氣一側後，通過基板轉動機構7〇把基板2轉 動180度，再將基板2放入真空預備室6 (步驟12〜步驟 15)。基板2雖然被送到離子束供給裝置5〇 (a)，但使離子 16/22S 201246264 The sub-beams t, , and 's are placed (the ion beam is irradiated to the upper and lower portions of the substrate 2, respectively), and the ion beam can be irradiated to the entire surface of the substrate 2. Therefore, even if the substrate j is large, even though It is also possible to irradiate ions substantially uniformly over the entire area of the panel portion of the county plate 2 without using a strip-shaped ion beam B having a long side of the ion beam cross section. Further, in the above-described vacuum preparation chamber 6 and the above-described processing chamber 1 The standby chamber 8 is provided between them, and since each chamber is partitioned by the vacuum valve G, it is easy to = the degree of vacuum in the processing chamber 1G described above, and it is possible to easily prevent the toxic gas temple from leaking to the outside. The ion source 52 of the mode is a container for introducing an ion source gas and internally generating a rotor body, and the anode source includes: a plasma generation container 78 formed with an ion outlet; and a plurality of magnets in the temple ion generation container 78 Externally, in the plasma, a magnetic field (more strictly speaking, a multi-cut magnetic field, also referred to as a multi-f, one or more (in the present embodiment, a plurality of) filaments 79, in the body-generating container 78, is generated. by The electron is an ionizing component that strikes the ion source gas; the extraction electrode system 77 is arranged to extract the vicinity of σ by the ion generating container 78. The ion beam is accelerated by the action of the electric field to extract the ion beam from the plasma. The Μ electrode (four) 77 has a plasma electrode 77 disposed closest to the downstream side of the plasma and a ground electrode 774. Further, between the rotor body electrode 7 = the sub-thickness generating container 7S is provided as (4). The body electrodes 771 to == between the electrodes, for example, by means of a blank W, the phases 74 between them are as shown in Fig. 4, and six kinds of electrotherapy 13/22 201246264 72 to which the ion source portion is connected are connected to the filament 79 and plasma generation. Rongqin π Gansheng plasma fox power supply. The power supply 74 is connected between the material body generation container 78, and the plasma generation is between 78 〇^aitt^75,, :::774, and the ion is interesting. The ionization of the ion is indicated by the ion beam irradiation in the normal operation state of the two (10) beamlet supply device 50 U) and =2匕〇 (seven). However, if the ion beam supply device is stopped, the ion beam supply device is stopped. Or in the area = ion beam An abnormality in the device can only be reached halfway; the irradiation sinks 'requires the entire surface of the substrate to be irradiated. The method and apparatus for providing such a requirement are provided. An example of the case where the remaining device is stopped is described. With reference to the reference 5, Fig. 6, in the _ processing open scale (4) a certain distance ('After giving the signal that the device is not ready, the substrate 2 is raised, straightforward , the preparation room 6 'the lining bundle supply device 5 〇 (a) riding the substrate 2 ^ lower side (step 1 to step 4). The ion beam is supplied to the farm 5 〇 (b) to stop the irradiation treatment (step 5). The substrate 2 is traversed from the first lane 3 to the second lane 32, and is transported to the ion beam supply device 5 (b), but the irradiation treatment is not performed (steps 6 to 8). Next, the ion beam supply device 5 is used to illuminate the lower side of the substrate 2, and the substrate 2 is transported to the vacuum chamber 6 via the standby chamber 8 (steps 9 to 11). The vacuum preparation chamber 6 is ventilated, and then the substrate is 2 After being sent to the atmosphere side, the substrate 2 is rotated by ISO degree by the substrate rotating mechanism 7〇, and then the substrate 2 is placed in the vacuum preparation chamber 6 (step 12 to step 14/22 201246264 nr ion beam supply device 5 (a) The lower side of the substrate 2 is irradiated twice (23), the substrate 2 is leveled, and the substrate 2 is stored in the device (8) = the upper ion beam (four)' can be used even if the ion beam is supplied to the substrate. The entire surface of 2 is irradiated with a desired dose. Ϊ, the two ion beam supply devices are normally operated at the beginning of the ion beam irradiation process, but on the way to the _ beamlet supply device 50 (b) An example in the case where an abnormality has occurred will be described. Referring to Fig. 7 and Fig. 8, after receiving the money that has been prepared from the supply scale at the start of the irradiation process, the substrate 2 is raised and vacuumed. The preparation chamber 6' irradiates the lower side of the substrate 2 with the ion beam supply device (4). Step 4). Then, the irradiation treatment of the ion beam supply device 50 (b) is abnormal at the same time (step 5). The substrate 2 is traversed from the first lane 3 to the second 32, and the hybrid beam supply is set to 5 () (8), but the irradiation treatment is not performed (turn 6 to step 8). Then, the lower side of the substrate 2 is irradiated with the ion beam supply device', and then the substrate 2 is transported to the straight preparation chamber 6 via the standby chamber 8 (steps 9 to η). After ventilating the vacuum preparation chamber 6, and then sending the substrate 2 to the atmosphere-side, the rigidity is rotated by the substrate rotating mechanism 2, and then the substrate 2 is placed in a vacuum pre--- (4) pair unilluminated beam (lower side)' The region stops the ion beam (step 16). Then, although the substrate 2 is transported to the ion beam supply device 5 (b), the clearing process (step π) is not performed. The substrate 2 is traversed from the first lane 31 to the third channel 32, and the substrate 2 is transported to the ion beam supply device % (b), and is not irradiated (steps 18 to 2). After the ion beam supply m 〇 does not (^ illuminate the lower side of the substrate 2 (step 21), the vacuum chamber 6 is ventilated through the standby chamber 15/22 201246264 back empty chamber 6, and then the j is stored to the atmosphere - On the side, after the wire 2 is leveled, the substrate 2 to the step (4) are applied. The ion beam irradiation is performed, and the abnormal beam supply device 5G (b) _ beamlet 钱 理 中 中 中 叫 It It It It It It It It It It The entire (four) shot of 2 is desired to stop the ion beam 'to turn off the off-source arc power source 72' of the above-mentioned ion beam supply device or to disconnect the off-source output power source 74 and the above-mentioned material supply device The power source 75 or the arc power source 72, the lead-out power source 74, and the acceleration power source 75 of the ion source of the ion supply device are turned off. Next, the two ion beam supply devices are normally operated at the start of the ion beam irradiation process, but in the return path Example of the case where the irradiation of the towel (10) beamlet supply device % (8) is abnormal in the middle of the process. Referring to Fig. 9 and Fig. 10, which ion beam supply device is prepared at the start of the irradiation process is prepared. After 2 stands up, and the lower side of the substrate 2 is irradiated with the ion beam supply device 50 (a) via the vacuum preparation chamber 6 (step 丨 to step 4). Then, the upper side of the substrate 2 is irradiated with the ion beam supply device 5 (b) ( Step 5). The substrate 2 is traversed from the first lane 31 to the second rail 32, and an abnormality occurs in the middle of the ion beam irradiation on the upper side of the substrate by the ion beam supply device 50 (b) (steps 6 to 8) Then, the lower side of the substrate 2 is irradiated with the ion beam supply device 5(a), and the substrate 2 is transported to the vacuum preparation chamber 6 via the standby chamber 8 (steps 9 to 11). The vacuum preparation chamber 6 is ventilated, and then the substrate is placed. 2, after being sent to the atmosphere side, the substrate 2 is rotated by 180 degrees by the substrate rotating mechanism 7, and the substrate 2 is placed in the vacuum preparation chamber 6 (steps 12 to 15). The substrate 2 is sent to the ion beam supply device 5 〇(a), but make ions 16/22
S 201246264 束停止。然德，发 但不進行照射/反2雖然被送到離子束供給裝置50(b)， 移到第理（步驟17)。把基板2從第一軌道31橫 50 (b) ^ ’之後雖然基板2被送到離子束供給裝置 離子束^照射處理（步驟18〜步驟20)。然後用 在已照射域_子束（下側）， 极2輪麵直驟21 )。料待齡8將基 板2送出到;至6 ’對真空預備室6通氣，然後將基 起來（步驟221牛使基板2成為水平後將基板2存放 在歸路=制離子束·，即使 了異常的产況下t ()的照射處理在中途發生 朝量。 ”以對基板2的整個面照射所希望的 【圖式簡單說明】 圖1⑷至圖1(b)是本發明的離子#昭 施方式的離子束照射裳置的示意圖。、…、、白、一個實 示意 圖。圖2是部分地表示帶狀離子束的-個例子的簡要立體 ^⑻至圖3(f)是表示本發明的離子照射中的動作的 圖 圖4是本發明的離子束供給裝置的離子源的電源連接 圖5是在本發明的-台離子束供給 止中^纽下,基板的整個面照射離子的流程圖停 圖6疋表示在本發明的一台離子桌 於停止中的情沉下，向基板的整個面^⑻處 圖。 叫、射離子狀況的說明 17/22 201246264 圖7是在本發明的一台離子束供給裝置50 (b)在處理 中途照射失敗了的情況下，向基板的整個面照射離子的流 程圖。 圖8是表示在本發明的一台離子束供給裝置5〇 (b)在 處理中途照射失敗了的情況下’向基板的整個面照射離子 的狀况的說明圖。 圖9是在本發明的一台離子束供給裝置5〇 ( b)在歸路 的處理中途照射失敗了的情況下，向基板的整個面照射離 子的流裎圖。 圖10是表示在本發明的一台離子束供給裝置50 (b) f歸路的處理中途照射失敗了的情況下，向基板的整個面 照射離子的狀況的說明圖。 【主要元件符號說明】 100 離子束照射裝置 2 基板 4Α 基板立起裝置 4Β 基板容納裝置 6 真空預備室 8 待機室 10 處理室 31 第一執道 32 第二轨道 33 第三執道 34 重疊位置 50 (a)離子束供給裝置 50 (b)離子束供給裝置 18/22 δ 201246264 52 離子源 53 離子束線 56 分析磁鐵 57 真空閥 58 離子束監測器 59 分析狹缝 60 控制裝置 70 基板轉動機構 72 電弧電源 74 引出電源 75 加速電源 77 引出電極糸統 78 等離子體生成容器 79 燈絲 771 等離子體電極 772 引出電極 773 抑制電極 774 接地電極 775 絕緣件 776 絕緣件 Wx 短邊的長度 Wz 長邊的長度 B 控制離子束 Ba 主面 G 真空閥 19/22S 201246264 The bundle stops. However, although the irradiation/reverse 2 is not sent to the ion beam supply device 50(b), it is moved to the first step (step 17). After the substrate 2 is laterally 50 (b) ^ ' from the first track 31, the substrate 2 is sent to the ion beam supply device for ion beam irradiation treatment (steps 18 to 20). Then used in the irradiated field _ beam (lower side), pole 2 round face straight step 21). Feeding the substrate 2 to the substrate 2; ventilating the vacuum preparation chamber 6 to 6', and then base the substrate (step 221, the substrate 2 is leveled, and the substrate 2 is stored in the return path = ion beam, even if abnormal In the case of the production condition, the irradiation treatment of t () occurs in the middle. "The desired surface is irradiated on the entire surface of the substrate 2". [Fig. 1 (4) to Fig. 1 (b) is the ion #昭施 of the present invention. A schematic diagram of the ion beam irradiation of the mode, . . . , white, and a schematic diagram. FIG. 2 is a simplified perspective partially showing an example of a ribbon ion beam (8) to FIG. 3 (f) showing the present invention. FIG. 4 is a diagram showing the operation of the ion source of the ion beam supply device of the present invention. FIG. 5 is a flow chart of irradiating ions on the entire surface of the substrate under the ion beam supply of the present invention. FIG. 6 is a diagram showing the entire surface of the substrate (8) in the case where an ion table of the present invention is stopped. Description of the state of the ionizing ion 17/22 201246264 FIG. 7 is a view of the present invention. The ion beam supply device 50 (b) fails in the middle of processing A flow chart of irradiating ions to the entire surface of the substrate. Fig. 8 is a view showing a state in which ions are irradiated to the entire surface of the substrate when one of the ion beam supply devices 5 (b) of the present invention fails in the middle of the processing. Fig. 9 is a flow diagram in which ions are irradiated onto the entire surface of the substrate when one of the ion beam supply devices 5 (b) of the present invention fails in the middle of the returning process. It is an explanatory view showing a state in which ions are irradiated onto the entire surface of the substrate in the case where the irradiation of the ion beam supply device 50 (b) of the present invention has failed in the middle of the process of returning to the substrate. [Description of main components] 100 ions Beam irradiation device 2 substrate 4 基板 substrate erecting device 4 基板 substrate accommodating device 6 vacuum preparation chamber 8 standby room 10 processing chamber 31 first trajectory 32 second rail 33 third trajectory 34 overlapping position 50 (a) ion beam supply device 50 (b) Ion beam supply device 18/22 δ 201246264 52 ion source 53 ion beam line 56 analysis magnet 57 vacuum valve 58 ion beam monitor 59 analysis slit 60 control device 70 substrate transfer Mechanism 72 Arc power supply 74 Power supply 75 Acceleration power supply 77 Extraction electrode system 78 Plasma generation container 79 Filament 771 Plasma electrode 772 Extraction electrode 773 Suppression electrode 774 Ground electrode 775 Insulation 776 Insulation Wx Short side length Wz Long side Length B Control ion beam Ba Main surface G Vacuum valve 19/22