KR101341829B1 - Method of ion beam irradiation and system the same - Google Patents

Abstract

The present invention provides an ion beam irradiation method and an ion beam irradiation apparatus.
In-line ion beam irradiation apparatus which irradiates ions to the upper half and the lower half of the substrate by two ion beam supply devices, wherein a desired dose amount is applied to the entire surface of the substrate even when one ion beam supply device is abnormally terminated during stopping or processing. Allow to inject
After the ion beam irradiation treatment is performed one round trip, the substrate rotating mechanism is controlled to rotate the substrate 180 degrees, and then reinserted into the ion beam irradiation apparatus, and the ion beam irradiation is performed to irradiate the entire surface of the substrate with the ion beam irradiation uncompleted range. An ion beam irradiation method characterized by the above-mentioned.

Description

Ion beam irradiation method and its device {METHOD OF ION BEAM IRRADIATION AND SYSTEM THE SAME}

The present invention relates to an ion beam irradiation apparatus which irradiates an ion beam to a substrate (for example, a glass substrate for a flat panel display) and performs processing such as ion implantation, ion beam alignment treatment, etc. on the substrate, and more specifically, The present invention relates to an ion beam irradiation apparatus in which a substrate is irradiated with an ion beam having a ribbon shape (also referred to as a sheet shape or a band. The same applies hereinafter) and conveying the substrate in a direction crossing the main surface of the ion beam. . This ion beam irradiation apparatus is also called an ion implantation apparatus in the case of ion implantation into a substrate.

In order to increase productivity of a flat panel display or the like, the substrate tends to be enlarged.

When the substrate is enlarged, an ion beam having a large beam width is required to irradiate the substrate with ion beams and to perform the treatment. To cope with this, an ion beam supply apparatus such as an ion source is enlarged. If you have an analytical electromagnet, it will be larger. When they are enlarged, various problems regarding their manufacture, transportation, cost, storage buildings, etc. are caused.

As one of the techniques for suppressing the enlargement of such an ion source, Patent Document 1 uses a ribbon-shaped ion beam whose length in the longitudinal direction is smaller than that of the corresponding side of the substrate, and further, the substrate is intersected with the main surface of the ion beam. In addition to the movement, the gap for irradiating the ion beam irradiates the ion beam to the substrate a plurality of times by using at least one of changing the position of the substrate in the vertical direction and rotating the substrate by 180 degrees. The ion beam irradiation apparatus which irradiates an ion beam to the whole surface of a board | substrate is described. In the surface of the board | substrate handled by this ion beam irradiation apparatus, the some cell which is a repeating unit of a predetermined | prescribed process pattern is formed along the dividing stage, and the said several beam irradiation area | region is arranged in this dividing stage. Place the part.

Japanese Laid-Open Patent Publication No. 2009-134923 (Fig. 8- Fig. 21)

In order to increase productivity of flat panel displays and the like, the substrate tends to be enlarged. Therefore, the efficiency of an ion irradiation process is calculated | required. As one of the solutions, an inline ion beam irradiation apparatus for irradiating ions to the upper half and the lower half of the substrate by two ion beam supply apparatuses has been proposed.

However, if one of the ion beam supply devices is unavailable for maintenance or the like, it is impossible to irradiate the entire surface of the substrate. Moreover, although two ion beam supply apparatuses are operating, when one ion beam supply apparatus ends abnormally during irradiation in one step, there exists a subject that a desired dose amount may be irradiated to the whole surface of a board | substrate.

Accordingly, the present invention provides an inline ion beam irradiation apparatus for irradiating ions to an upper half and a lower half of a substrate by two ion beam supply devices, wherein one ion beam supply device is stopped or two ion beam supply devices are operated. Even if a process is started but abnormality arises in the middle of irradiation of a certain step, it aims at providing the method and apparatus which can irradiate a desired dose amount to the whole board | substrate whole surface.

A processing chamber for irradiating an ion beam to a substrate is provided with two ion beam supplying apparatuses for irradiating the ion beam onto the substrate, and each range of irradiating ions by each of the ion beam supplying apparatuses includes an upper half of the substrate; In the lower half, the ribbon-shaped ion beam is supplied to the processing chamber in a direction intersecting with the direction in which the substrate is conveyed in a direction in which a main surface of the ion beam intersects the conveying direction of the substrate in the processing chamber, In the apparatus for irradiating an ion beam to the entire surface of the substrate in cooperation with the conveyance of the substrate, the control device of the ion beam irradiation apparatus receives an uncompleted signal that is not capable of irradiating an ion beam from the one ion beam supply device, and performs ion beam irradiation processing. After reciprocating, the substrate rotating mechanism is controlled to rotate the substrate 180 degrees, and then to the ion beam irradiation apparatus. It is characterized in that the ion beam is irradiated to the entire surface of the substrate by re-feeding and reciprocating the ion beam irradiation process once.

In addition, the present invention provides an ion beam irradiation method, wherein the ion beam irradiation method uses an ion beam irradiation device, and is provided with two ion beam supply devices for irradiating the ion beam to the substrate in a processing chamber for irradiating the ion beam to a substrate. Each range of irradiating ions by each of the ion beam supply apparatuses is an upper half and a lower half of the substrate, and the ribbon-shaped ion beam in the direction intersecting the direction in which the substrate is conveyed to the processing chamber, In the ion beam irradiation apparatus, wherein the main surfaces of the ion beams are supplied in directions crossing the conveyance direction of the substrate in the processing chamber, respectively, and the ion beam is irradiated onto the entire surface of the substrate in cooperation with the conveyance of the substrate. The control device of the ion beam irradiation device receives the preparation completion signal of the device and starts the ion irradiation process. When either ion beam supply device is abnormally terminated because beam irradiation is impossible during the processing, an abnormal end signal, an irradiation error position information signal, and an ion beam current value signal are transmitted to the control device of the ion beam irradiation device. After one round of processing, the substrate rotating mechanism is controlled to rotate the substrate 180 degrees and then fed back into the ion beam irradiation apparatus, and the controller of the ion beam irradiation apparatus recognizes which range of the substrate is incomplete. After the ion beam is irradiated to the unprocessed range, the ion beam is stopped so that the ion beam is not irradiated from the ion beam supply device, and the ion beam is irradiated to the entire surface of the substrate.

To stop the ion beam, the arc power source, the extraction power source and the acceleration power source, or the arc power source and the extraction power source and the acceleration power source of the ion source of the ion beam supply apparatus are turned off.

According to the invention as set forth in claim 1, in the inline ion beam irradiation apparatus in which ions are irradiated to the upper half and the lower half of the substrate by two ion beam supply apparatuses, a predetermined dose is applied to the entire surface of the substrate even when one ion beam supply apparatus is stopped. Volume survey processing can continue automatically.

According to the invention as set forth in claim 2, although the two ion beam supply apparatuses start processing with the preparation for processing OK, even if abnormally terminated by the ion beam supply apparatus of any one step, ions are irradiated only to the unirradiated area | region, and the predetermined | prescribed whole surface of a board | substrate is prescribed | regulated. The dose investigation process can be continued automatically.

According to the invention as set forth in claim 3, the beam can be stopped so that the ion beam is not irradiated from the ion beam supply device in a range where the injection of the desired dose amount is completed.

According to the present invention, an inline ion beam irradiator for irradiating ions to an upper half and a lower half of a substrate by two ion beam supply devices, wherein one ion beam supply device is stationary or two ion beam supply devices are operated. Although the process was started, the desired dose can be irradiated to the whole board | substrate whole surface also when abnormality arises in the middle of irradiation of any step.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram of the ion beam irradiation apparatus which concerns on one Embodiment of the ion beam irradiation apparatus which concerns on this invention.
2 is a schematic perspective view partially showing an example of a ribbon ion beam.
3 is a schematic diagram showing an operation during ion irradiation according to the present invention.
4 is an ion source power supply connection diagram of the ion beam supply apparatus according to the present invention.
5 is a flow chart in which ions are irradiated onto the entire surface of the substrate when one ion beam supply device 50 (b) according to the present invention is stopped.
Fig. 6 is an explanatory diagram showing how the ion is irradiated onto the entire surface of the substrate when one ion beam supply device 50 (b) according to the present invention is stopped.
FIG. 7 is a flow chart in which ions are irradiated onto the entire surface of the substrate when irradiation fails in the middle of the treatment in one ion beam supply device 50 (b) according to the present invention.
FIG. 8 is an explanatory view showing how the ion is irradiated onto the entire surface of the substrate when irradiation fails in the middle of the treatment in one ion beam supply device 50 (b) according to the present invention.
Fig. 9 is a flow chart in which ions are irradiated onto the entire surface of the substrate when irradiation fails in the course of the return path in one ion beam supply device 50 (b) according to the present invention.
Fig. 10 is an explanatory diagram showing how the ion is irradiated onto the entire surface of the substrate when irradiation fails during the return process in one ion beam supply device 50 (b) according to the present invention.

<Examples>

EMBODIMENT OF THE INVENTION Hereinafter, one Embodiment of this invention is described with reference to drawings.

As shown in FIG. 1, the ion beam irradiation apparatus 100 is for irradiating ions by irradiating an ion beam B to a large substrate 2 used for a flat panel display or the like in the processing chamber 10 evacuated. Here, the board | substrate 2 in this embodiment includes a glass substrate, a glass substrate with an orientation film, a semiconductor substrate, and the board | substrate to which the other ion beam B is irradiated, for example. In addition, although the shape of the board | substrate 2 has comprised the rectangular thin plate shape, it may be circular.

The ion beam irradiation apparatus 100 is a chamber in which the vacuum beam is exhausted, and a processing chamber 10 in which the ion beam B is irradiated onto the substrate 2, and a waiting chamber in which the processing standby substrate 2 stands as a chamber adjacent to the processing chamber 10. (8) and a vacuum reserve chamber (6) for inserting and removing the substrate (2) between the waiting chamber (8) and the atmosphere. Each room is substantially hollow rectangular parallelepiped shape, and the connection part between each room is divided by the vacuum valve G (gate valve).

More specifically, the ion beam irradiating apparatus 100 carries a conveyance mechanism 3 for conveying the substrates 2 in two rows in the vacuum preliminary chamber 6, the waiting chamber 8, and the processing chamber 10 in two rows, respectively. ), A control unit that performs various controls according to the position and position of the substrate 2 in the transfer mechanism 3, and the substrate 2 conveyed by the transfer mechanism 3 to the processing chamber 10. And an ion beam supply device 50 (a) for irradiating a pair of ion beams B in the beam), and an ion beam supply device 50 (b), and a substrate rotating mechanism 70 for rotating the substrate on the atmosphere side.

Each section will be described. In the following description, a right-handed system in which the horizontal plane is the XY plane and the vertical upward direction is the Z axis will also be described.

The conveying mechanism 3 has a pair of parallel tracks spaced apart from each other, the substrates 2 having the same shape along the tracks, and the face plates are parallel to the tracks, and the substrates 2 on the tracks It is comprised so that it may advance in mutually opposite directions, maintaining a posture which becomes parallel.

More specifically, in the present embodiment, the pair of tracks is formed from the substrate standing apparatus 4A for standing the unprocessed substrate 2 in a horizontally laid state, from the vacuum preliminary chamber 6, the waiting chamber 8, and the The first trajectory 31 which advances the board | substrate 2 in the advancing direction of the process chamber 10, and the board | substrate 2 processed after standing each room in the order opposite to the 1st trajectory 31 stand up It consists of the 2nd track | orbit 32 which advances the board | substrate 2 to the anti-progression direction to the board | substrate storage apparatus 4B which lays down horizontally again in a state. As shown in FIG. 1, on the 1st orbit 31 and the 2nd orbit 32, each board | substrate 2 is conveyed in an X-axis direction, with the faceplate part facing a Y-axis direction in the state which stood up.

Moreover, the said conveyance mechanism 3 is comprised in the process chamber 10 so that the board | substrate 2 may be moved from one track | orbit to the other track | orbit. Specifically, in the innermost part of the processing chamber 10, a third orbit 33 for moving the substrate 2 from the first orbit 31 to the second orbit 32 is further provided. The substrate 2 is configured to make a U-turn within the circuit.

Moreover, in the said process chamber 10, it is comprised so that when the board | substrate 2 on each track | orbit reaches the predetermined | prescribed polymerization position 34 as seen from the Y-axis direction which is the direction perpendicular | vertical to the said face plate part, it is comprised. Specifically, as shown in FIG. 1B, the contour of the substrate 2 on the first orbit 31 and the substrate on the second orbit 32 are formed at the polymerization position 34 substantially in the center of the processing chamber 10. The outline of 2) is made to match.

The control unit is a so-called computer, for example, control of the conveyance speed and position of each substrate 2, opening / closing of the vacuum valve G provided between the rooms according to the position of each substrate 2, and a substrate rotating mechanism 70. ) And on / off of the ion beam B.

The pair of ion beam supply devices 50 (a) and ion beam supply devices 50 (b) have a ribbon-shaped ion beam B having a main surface Ba, which is the larger one of the side surfaces parallel to the beam traveling direction. And the position traversed by the substrate 2 advancing on the track. In detail, each ion beam supply device is described in detail. After the ion beams B emitted from the ion source 52 are analyzed through the analysis magnet 56 and the momentum is analyzed, the ion beams B pass through the slit 59 and are ribbon-shaped ion beams. It is supposed to be injected. As shown in Fig. 2, the ribbon-shaped ion beam B (also referred to as a sheet shape or the like) has a much larger length Wz in the beam cross section than the length Wx of the short side.

Each of the ion beams B is configured to pass through the traveling direction side and the anti-advancing direction side, respectively, to avoid the substrate 2 at the polymerization position 34. In this embodiment, the ion beam supply device 50 (b) on the advancing direction side (right side in the drawing) of the polymerization position 34 irradiates the substrate 2 with the first ion beam B, and the anti-advancing direction. The ion beam supply device 50 (a) on the side (left side in the drawing) irradiates the second ion beam B to the substrate 2.

In addition, as shown in Fig. 1 (b), when viewed from the Y-axis direction which is a direction perpendicular to the face plate portion, each ion beam B is irradiated alternately, and the face plate portion of the substrate 2 is caused by each ion beam B. The ion beam B is scanned in its entirety. In other words, when viewed in the X-axis direction, which is parallel to the face plate and parallel to the trajectory, the ion beams B are adjacent to each other. Thus, by irradiating the ion beam B to the board | substrate 2, ion is implanted in the whole surface plate part only by conveying the board | substrate 2 once in a advancing direction or a half advancing direction.

The ion beam irradiation apparatus 100 configured as described above will be described with reference to the operation diagram of FIG. 3. In addition, in this operation | movement description, the board | substrate 2 conveyed on the 1st orbit 31 and the 2nd orbit 32 in the process chamber 10 is also called a 1st board | substrate and a 2nd board | substrate, respectively. When the board | substrate 2 is moved from the 1st track | orbit 31 to the 2nd track | orbit 32, a name will change from a 1st board | substrate to a 2nd board | substrate, but it points to the same board | substrate 2. 3 (a) to 3 (f) illustrate substrate positions with time variation.

As shown in FIG. 3A, the first substrate loaded into the processing chamber 10 is waiting on the left side of the second ion beam B, and the substrate 2 once irradiated with the ion beam B once. The second substrate transferred from the first orbit 31 to the second orbit 32 is waiting on the right side of the first ion beam B.

Next, as shown in Fig. 3B, the first substrate is moved to the position where the second ion beam B is scanned, and ions are irradiated to the lower half region of the face plate portion. At the same time, the second substrate is moved to the position where the first ion beam B is scanned to irradiate ions to the upper half region of the face plate portion.

As shown in Fig. 3 (c), when each substrate 2 proceeds in each direction and ion irradiation to half of the region is completed, polymerization between the first ion beam B and the second ion beam B is performed. At position 34 each substrate 2 is almost superimposed when viewed in the Y-axis direction. Therefore, as apparent from the drawing, the first substrate on the front side does not obstruct the ion beam B to be irradiated on the second substrate on the back side.

Next, as shown in FIG. 3 (d), in contrast to FIG. 3 (b), the first substrate is moved to the position where the first ion beam B is scanned, and ions are irradiated to the upper half region of the face plate portion. At the same time, the second substrate is moved to the position where the second ion beam B is scanned to irradiate ions to the lower half region of the face plate portion.

When each of the substrates 2 passes through the ion beam B, as shown in FIG. 3E, the first substrate advances to the innermost portion of the processing chamber 10, and the second substrate is formed of the processing chamber 10. Proceed to entry and exit. At this point, ions are irradiated to the entire area of the face plate portion of each substrate 2.

Finally, as shown in Fig. 3 (f), the vacuum valve G is opened, the second substrate is carried out from the processing chamber 10 to the waiting chamber 8, and a new first substrate is carried in. At the same time, the first substrate on the innermost part of the processing chamber 10 moves along the third orbit 33 to the second orbit 32. Thereafter, the processes of FIGS. 3A to 3F are repeated. That is, the substrate 2 is irradiated onto the entire face plate portion once by advancing on the first orbit 31, and then ions are once again implanted onto the entire face plate portion by advancing on the second orbit 32. For this reason, even if the ion irradiation amount to the board | substrate 2 is made larger or conveyance speed is made faster, when exiting the process chamber 10, it can be made to inject | pour in desired ion concentration.

Thus, according to the ion beam irradiation apparatus 100, each board | substrate 2 advances to the opposite direction, and each ion beam B avoids the board | substrate 2 in which the superposition | polymerization position 34 in the process chamber 10 was superimposed. Since it is configured to pass through the advancing side and the anti-advancing side, respectively, when viewed from the ion beam B, the front substrate 2 covers the rear substrate 2 so that the ion beam B is not irradiated. Can be prevented. In addition to the polymerization position 34, two ion beams B can be irradiated to each substrate 2 at all times.

Therefore, since ion can be irradiated to two board | substrates 2 almost simultaneously in each ion beam B simultaneously, the process water per unit time is significantly improved compared with the case where it processes one by one by the conventional ion beam B conventionally. You can. Furthermore, in the present embodiment, since the substrate 2 is moved from the first orbit 31 to the second orbit 32 in the processing chamber 10 and is extended again, ion implantation is performed four times, so that the substrate 2 The amount of ion irradiation can be greatly increased.

In addition, when two ion beams B are viewed in a direction parallel to the trajectory, each of the ion beams B is adjacent to and almost in contact with each other, so that the region for two ribbon ion beams B in the Z-axis direction is once a substrate. (2) Ion can be irradiated by conveyance. Therefore, even if the substrate 2 is large, the ion can be irradiated almost uniformly all over the face plate portion of the substrate 2 without using the ribbon-shaped ion beam B having a very long side in one beam cross section. have.

Furthermore, since the waiting room 8 is provided between the said vacuum preliminary chamber 6 and the said processing chamber 10, and each room is divided by the vacuum valve G, the vacuum degree in the said processing chamber 10 is easily maintained. It is easy to prevent the poisonous gas from leaking to the outside.

Thus, as shown in Fig. 4, the ion source 52 of the present embodiment is a vessel for introducing an ion source gas to generate plasma therein, the plasma generation vessel 78 having an ion outlet and a plasma generation vessel ( A plurality of magnets provided outside the 78 to form a cusp magnetic field (more precisely a multi cusp magnetic field, also referred to as a multipole magnetic field) inside the plasma generating vessel 78, and within the plasma generating vessel 78; One or more (in this embodiment, plural) filaments 79 constituting ionization means for ionizing the ion source gas by electron impact and generating plasma, and provided near the ion outlet of the plasma generating vessel 78, the plasma An extraction electrode system 77 which accelerates and extracts the ion beam B under the action of the electric field is provided.

On the other hand, the lead-out electrode system 77 includes a plasma electrode 771, a lead-out electrode 772, a suppression electrode 773, and a ground electrode 774 arranged from the most plasma side toward the downstream side. An insulator 775 is provided between the plasma electrode 771 and the plasma generating vessel 78 as an insulating means for electrically insulating the two. In addition, the electrodes 771 to 774 are electrically insulated from each other by, for example, an insulator 776.

Six kinds of power sources of the ion source portion are connected as shown in FIG. The arc power source 72 connected between the filament 79 and the plasma generation vessel 78 is a power source that generates an arc to generate plasma. The extraction power source 74 connected between the extraction electrode 772 and the plasma generation vessel 78 extracts the ions generated in the plasma generation vessel 78 and between the extraction power source 74 and the ground electrode 774. The accelerated power supply 75 connected to this accelerates ions to the desired energy of the extracted ion beam.

In the above description, the ion beam irradiation was performed in a state where two ion beam supply devices 50 (a) and ion beam supply devices 50 (b) were normally operated. However, there is a request to irradiate a desired dose amount on the entire surface of the substrate even when either ion beam supply device is stopped or when the ion beam supply device is abnormal due to an abnormality in the ion beam supply device during the processing step.

The present invention proposes a method and apparatus for realizing this need.

An embodiment of the case where the ion beam supply device 50 (b) is stopped at the start of the ion beam irradiation process will be described.

5 and 6, after receiving a signal indicating which ion beam supply device is not ready at the start of the irradiation process, the substrate 2 is standing up and the vacuum preliminary chamber 6, and the ion beam supply device ( The lower side of the board | substrate 2 is irradiated with 50 (a) (step 1-step 4). Since the ion beam supply device 50 (b) is stopped, the irradiation process is not performed (step 5). The substrate 2 is traversed from the first orbit 31 to the second orbit 32 and conveyed to the ion beam supply device 50 (b), but no irradiation is performed (steps 6 to 8). Next, the lower side of the board | substrate 2 is irradiated with the ion beam supply apparatus 50 (a), and it is conveyed to the vacuum preliminary chamber 6 via the waiting chamber 8 (step 9-step 11). After venting the vacuum preliminary chamber 6 and carrying out the substrate 2 to the atmosphere, the substrate 2 is rotated 180 degrees by the substrate rotating mechanism 70 and reinserted into the vacuum preliminary chamber 6 (step 12). Step 14). The ion beam supply apparatus 50 (a) irradiates the lower side of the board | substrate 2 twice (step 15-step 23), and the board | substrate 2 is stored horizontally (step 24). By these ion beam irradiation, even if the ion beam supply apparatus 50 (b) is stopped, a desired dose can be irradiated to the whole surface of the board | substrate 2.

Next, although the two ion beam supply apparatuses were normally operated at the start of the ion beam irradiation process, an example will be described in the case where an abnormality occurs in the course of the irradiation of the ion beam supply apparatus 50 (b) in the path during the process. do.

7, 8, after all the ion beam supply devices have received the signal of ready OK at the start of the irradiation process, the substrate 2 is raised and the ion beam supply device 50 is passed through the vacuum reserve chamber 6. (a)) is irradiated with the lower side of the board | substrate 2 (step 1-step 4). Next, an abnormality occurred during the irradiation treatment of the ion beam supply device 50 (b) (step 5). The substrate 2 is traversed from the first trajectory 31 to the second trajectory 32 and conveyed to the ion beam supply device 50 (b), but no irradiation treatment is performed (steps 6 to 8). Next, the lower side of the board | substrate 2 is irradiated with the ion beam supply apparatus 50 (a), and it is conveyed to the vacuum preliminary chamber 6 via the waiting chamber 8 (step 9-step 11). After venting the vacuum preliminary chamber 6 and carrying out the substrate 2 to the atmosphere, the substrate 2 is rotated 180 degrees by the substrate rotating mechanism 70 and reinserted into the vacuum preliminary chamber 6 (step 12). Step 15). The ion beam is irradiated (lower) to the unirradiated area by the ion beam supply device 50 (a), and the beam is stopped in the existing irradiated area (step 16). Next, although the board | substrate 2 is conveyed to the ion beam supply apparatus 50 (b), irradiation process is not performed (step 17). The substrate 2 is traversed from the first trajectory 31 to the second trajectory 32 and conveyed to the ion beam supply device 50 (b), but the irradiation process is not performed (steps 18 to 20). The substrate 2 is irradiated to the lower side of the substrate 2 by the ion beam supply device 50 (a) (step 21), and then conveyed to the vacuum preliminary chamber 6 through the waiting chamber 8, and vacuumed. The preliminary chamber 6 is vented and carried out to the atmospheric side, and the board | substrate 2 is horizontally accommodated (step 22-step 24). By these ion beam irradiation, even if abnormality arises during the ion beam irradiation process of the ion beam supply apparatus 50 (b), a desired dose amount can be irradiated to the whole surface of the board | substrate 2.

In order to stop the ion beam, the arc power source 72 or the extraction power source 74 and the acceleration power source 75 or the arc power source 72 and the extraction power source 74 and the acceleration power source 75 of the ion source of the ion beam supply apparatus. OFF.

Next, although the two ion beam supply apparatuses operated normally at the start of an ion beam irradiation process, the Example regarding the case where the abnormality in the irradiation to the ion beam supply apparatus 50 (b) from the return path occurs in the middle of a process is demonstrated. 9 and 10, after all the ion beam supplying devices have received the signal that the preparation is OK at the start of the irradiation treatment, the substrate 2 is standing up and the vacuum beam preservation chamber 6 is used to supply the ion beam supplying device 50. (a)) is irradiated with the lower side of the board | substrate 2 (step 1-step 4). Next, the upper side of the board | substrate 2 is irradiated with the ion beam supply apparatus 50 (b) (step 5). The substrate 2 was traversed from the first trajectory 31 to the second trajectory 32 and an abnormality occurred during the ion beam irradiation of the upper side of the substrate 2 with the ion beam supply device 50 (b) (steps 6 to 6). Step 8). Next, the lower side of the board | substrate 2 is irradiated with the ion beam supply apparatus 50 (a), and it is conveyed to the vacuum preliminary chamber 6 via the waiting chamber 8 (step 9-step 11). After venting the vacuum preliminary chamber 6 and carrying out the substrate 2 to the atmosphere, the substrate 2 is rotated 180 degrees by the substrate rotating mechanism 70 and reinserted into the vacuum preliminary chamber 6 (step 12). Step 15). The substrate 2 is conveyed to the ion beam supply device 50 (a), but the beam is stopped. Thereafter, the substrate 2 is conveyed to the ion beam supply device 50 (b), but no irradiation treatment is performed (step 17). The substrate 2 is traversed from the first trajectory 31 to the second trajectory 32 and conveyed to the ion beam supply device 50 (b), but no irradiation treatment is performed (steps 18 to 20). Next, the ion beam is irradiated (lower side) to the unirradiated area by the ion beam supply device 50 (a), and the beam is stopped in the irradiated area (step 21). It conveys to the vacuum preliminary chamber 6 via the waiting room 8, vents the vacuum preliminary chamber 6, carries it out to the atmospheric side, and accommodates the board | substrate 2 horizontally (step 22-step 24). These ion beam irradiation can irradiate the desired dose amount to the whole surface of the board | substrate 2, even when an abnormality arises in the process of irradiation to the ion beam supply apparatus 50 (b) from a return path.

100 ion beam irradiator 2 substrate
4A Board Mounting Device 4B Board Enclosure
6 Vacuum reserve room 8 Waiting room
10 Process chamber 50 (a) Ion beam supply device
50 (b) Ion beam supply device 52 Ion source
53 Ion Beam Line 57 Vacuum Valve
58 Ion Beam Monitor 59 Analysis Slit
60 Controller 70 Substrate Rotation Mechanism
72 arc power 74 draw power
75 acceleration power

Claims (4)

An ion beam irradiation method using an ion beam irradiation device having two ion beam supply devices for irradiating the ion beam to the substrate, respectively, in a processing chamber for irradiating an ion beam to a substrate,
The control device of the ion beam irradiation apparatus sets each range in which ions are irradiated by the respective ion beam supply devices to the upper half and the lower half of the substrate, and crosses the direction in which the substrate is conveyed to the processing chamber. The polymerization position in which the ribbon-shaped ion beams are respectively supplied in a direction in which a main surface of the ion beams intersects the conveying direction of the substrate in the processing chamber, and the ion beam is a position at which the substrate is superimposed. Setting each of the substrates to pass through the substrate and irradiating an ion beam to the entire surface of the substrate in cooperation with conveyance of the substrate;
Receiving, by the control device of the ion beam irradiation device, an uncompleted signal in an ion beam irradiation impossible state from one of the ion beam supply devices; And
After the control device of the ion beam irradiation device performs one reciprocation of the ion beam irradiation process, the substrate rotating mechanism on the air side is controlled to rotate the substrate 180 degrees, and then reinserted into the ion beam irradiation device, and the ion beam irradiation process is made one reciprocation. Thereby irradiating an ion beam onto the entire surface of the substrate. An ion beam irradiation method using an ion beam irradiation device having two ion beam supply devices for irradiating the ion beam to the substrate, respectively, in a processing chamber for irradiating an ion beam to a substrate,
The control device of the ion beam irradiation apparatus sets each range in which ions are irradiated by the respective ion beam supply devices to the upper half and the lower half of the substrate, and crosses the direction in which the substrate is conveyed to the processing chamber. In the direction, the ribbon-shaped ion beam is set so as to be supplied in a direction in which the main surface of the ion beam intersects the conveying direction of the substrate in the processing chamber, and the ion beam avoids the polymerization position where the substrate is superposed. Set to pass through each, and cooperating with conveyance of the substrate to irradiate an ion beam onto the entire surface of the substrate;
Receiving, by the control device of the ion beam irradiation device, the ready signals of the two ion beam supply devices;
After starting the ion irradiation process, if any one of the ion beam supply devices is abnormally terminated because the beam irradiation is impossible during the processing, the abnormality end signal, the irradiation error position information signal, and the ion beam current value are set by the control device of the ion beam irradiation device. Transmitting a signal; And
After the control device of the ion beam irradiation device performs the ion beam irradiation treatment one round trip, the substrate rotating mechanism on the air side is controlled to rotate the substrate 180 degrees, and then reinserted into the ion beam irradiation device, and a range of the substrate is ion beam irradiation. Recognizing whether the processing is incomplete, irradiating the ion beam in the unprocessed range, and stopping the ion beam so that the ion beam is not irradiated from the ion beam supply device, and irradiating the ion beam to the entire surface of the substrate. Investigation Method. The method of claim 2, wherein irradiating an ion beam onto the entire surface of the substrate,
Stopping the beam so that the ion beam is not irradiated from the ion beam supply device by turning off the arc power source, the extraction power source and the acceleration power source, or the arc power source and the extraction power source and the acceleration power source of the ion beam supply device ion source. An ion beam irradiation method characterized by the above-mentioned. An ion beam irradiation device comprising two ion beam supply devices for irradiating an ion beam to an upper half and a lower half of the substrate in a processing chamber for irradiating an ion beam to a substrate, a control device, and a substrate rotating mechanism on an atmosphere side,
The ribbon-shaped ion beam is supplied to the processing chamber in a direction crossing the direction in which the substrate is conveyed, respectively, in a direction in which a main surface of the ion beam crosses the conveying direction of the substrate in the processing chamber, and the ion beam is provided in the substrate. Preparations are made in which the ion beam is impossible to irradiate the entire surface of the substrate in cooperation with the conveyance of the substrate, and the control device is in an ion beam irradiated state from one of the ion beam supply devices. After receiving the incomplete signal and performing the ion beam irradiation process for one round trip, the substrate rotating mechanism is controlled to rotate the substrate by 180 degrees, and then returned to the ion beam irradiation apparatus, and the ion beam irradiation process is performed for one round tripping of the entire surface of the substrate. An ion beam irradiation apparatus, characterized in that for irradiating an ion beam.

Images