TW201327720A - 用以機製基體及其所用方法 - Google Patents

用以機製基體及其所用方法 Download PDF

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TW201327720A
TW201327720A TW101141285A TW101141285A TW201327720A TW 201327720 A TW201327720 A TW 201327720A TW 101141285 A TW101141285 A TW 101141285A TW 101141285 A TW101141285 A TW 101141285A TW 201327720 A TW201327720 A TW 201327720A
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substrate
rotary table
gripper
rotating
slider
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TWI569360B (zh
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Primin Muffler
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Solar Semi Gmbh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B44DECORATIVE ARTS
    • B44CPRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22Removing surface-material, e.g. by engraving, by etching
    • B44C1/227Removing surface-material, e.g. by engraving, by etching by etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B31/00Chucks; Expansion mandrels; Adaptations thereof for remote control
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    • B23B31/30Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • H01L21/30655Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3021Imagewise removal using liquid means from a wafer supported on a rotating chuck
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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    • H01L21/30604Chemical etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/141Associated with semiconductor wafer handling includes means for gripping wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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    • Y10T279/11Vacuum

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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  • ing And Chemical Polishing (AREA)
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Abstract

在一用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的裝置中,具有一旋轉台,該旋轉台係具有一文氏管隙。

Description

用以機製基體及其所用方法 發明領域
本發明係有關一種如申請專利範圍第1項的前言部份之用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的裝置,及一種如申請專利範圍第8項之前言部份的方法。
發明背景
先前技術揭露許多不同之用以機製處理基體的裝置。在半體之領域中,特別是,用以施加光阻於基體上的轉動或旋轉塗層機係已習知。此等轉動或旋轉塗層機亦被稱為“塗層機”。晶圓或玻璃碟片或類似物會被作為基體。除了該等“塗層機”外,先前技術亦揭露用以機製處理,特別是蝕刻及/或顯影,基體的裝置。
在本文中,係特別地注意到EP 1 743 220 A1專利。被揭述於該先前技術中之基體的旋塗裝置描述一種旋轉塗層機,其具有一可旋轉的基體台可供一基體水平置放。該處理介質係藉旋轉該基體台來配佈。一特別的問題係該處理介質亦會透至該基體要被處理的背面並調變它。 此會導致對該背面的損害,特別是在雙面晶圓的情況下。
發明概要
本發明的目的係要提供一種用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的裝置,俾能以一方式處理一晶圓而使其背面不會損壞及/或污染,並提供一種用於此目的的方法。
申請專利範圍第1和7項的特徵會導致該目的的達成。
在典型的實施例中,一用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的裝置,具有一旋轉台其有一文氏管隙。壓縮空氣或某些其它介質較好係被輸送穿過該文氏管隙。此會造成若干優點。第一優點係,結果,該基體會被依據文氏管原理來吸入,並被固持於該旋轉台上而不會掉落,儘管該旋轉台在旋轉。另一優點係該背面會保持乾淨,且該處理介質不會跑到該背面上而污染或損壞它,此對雙面皆要被塗層或加工的基體是特別地有利。
若該文氏管隙有一0.01mm至0.1mm,較好是0.58mm的間隙尺寸乃是較佳的。基本上,該間隙尺寸係取決於要被加工的基體厚度和大小。
在典型的實施例中,該裝置包含一壓縮空氣源。此所具的優點係該文氏管隙能被供應壓縮空氣或壓力介質。如一特別較佳的選擇,該壓縮介質溝係適合於製造一4至8bar,較好為6bar的超額壓力。
該裝置較好包含界定的邊緣,俾能達到一界定的壓力分佈,尤其是在該文氏管隙中。如一特別較佳的選擇,該等邊緣係設在該文氏管隙的上游。
在典型的實施例中,該裝置包含至少一孔。該至少一孔較好係設在該旋轉枱之一中央區域,該區域面對一基體。多數個孔較好係設在該上表面。此所具的優點係可防止一減低的壓力或真空產生於該旋轉台與該基體之一中央區域之間。此乃是有利的,因其能防止該基體在該中央區域彎曲或以某些其它方式變形。
在典型的實施例中,該旋轉台具有一盤的形狀。此所具的優點係該旋轉台會非常堅固耐用且製造容易又經濟。
在典型的實施例中,該裝置具有一擴散器。該擴散器較好係嵌入該旋轉台之一內部空間中。
如一特別較佳的選擇,該擴散器會與該旋轉台形成該文氏管隙。如一甚至更佳的選擇,該擴散器的上表面會至少部份地形成一區域,其中有一真空能形成於該晶圓與該上表面之間。
如一特別較佳的選擇,該擴散器的底面會形成一邊緣,其會確保該旋轉台之上表面與該擴散器的底面間之被界定的該壓力介質之壓力分佈。
如一特別較佳的選擇,該裝置,特別是該旋轉台,包含多數個銷,較好是三或四個銷。該等銷較好具有會使該晶圓滑入該等銷間之一預定位置中的效果。當該晶 圓貼置於一個該等銷上時,會被一感測單元檢測到,且該處理操作不會被進行。
在典型的實施例中,該裝置包含一旋轉台其具有多數個溝槽。該等溝槽較好係列設在該旋轉台之一圓周邊緣上。該等溝槽較好係以一方式列設成使該晶圓或基體,當正確地定位時,會突出於該等溝槽上。
在典型的實施例中,該裝置包含一抓持器。該抓持器較好包含多數個抬高銷。該抓持器的抬高銷較好係以如同該旋轉台上之溝槽的角度間隔來列設。該抓持器的抬高銷較好係列設在一直徑上,其對應於一該旋轉台之溝槽被列設的直徑。此所具的優點係該抓持器的抬高銷能套入於該旋轉台的溝槽中,以確使該晶圓或基體會貼置於該抓持器的抬高銷上。
又更有利的是該抓持器亦能被用來將該晶圓下放在該台上而不會損壞該抓持器。
在典型的實施例中,該旋轉台係被以一方式設計成使一由該文氏管隙出現的介質或空氣流會被導入該旋轉台之一上表面下方的區域中。此所具的優點係可達成較佳的塗層。這是可能的,因為一在一上表面及一基體上方的動流會被避免或減少。減少或避免一動流在該基體上方會確保塗層的較佳塗敷。最主要的是,當塗敷時較少亂流在該塗層介質中。且,所施加的塗層亦不會遭受任何動流,故,一較佳的乾燥結果會被達成。最後,避免或減少在該旋轉台及/或基體之上表面上方的動流,會避免可能掉落於 新鮮塗層上之污物或微粒的散佈。
為此目的,該旋轉台較好具有一倒角。如一特別較佳的選擇,該倒角係設在該旋轉台之一上圓周邊緣,特別是在該旋轉台之一底部件上。
該倒角較好具有一寬度為0.5mm至10mm,特別是一1mm至5mm的寬度,較佳為3mm。該倒角較好具有一高度為0.5mm至10mm,特別是一1mm至5mm的寬度,較佳為3mm。
若一形成於該旋轉台之一上表面的軸線與該倒角之一上表面的軸線之間的角度係為5°至85°乃是較佳的,較好為20°至50°,特別是48°。
對一用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的方法會被分開地尋求保護,其包含以下步驟:旋轉該旋轉台,施加一處理介質於該旋轉台,移除一基體。
在典型的實施例中,一滑塊會被置設用以放置該基體。於此過程中,該基體會貼置於該滑塊上。該滑塊較好係為一直線運動元件。若該滑塊係以一方式移動而使該基體被定位於該旋轉台上乃是較佳的。嗣該抓持器會被置於該滑塊和該基體下方,而使該基體貼置於該抓持器的三個抬高銷上。若該滑塊係由該基體下方移除乃是較佳的,較好是藉由一直線運動。在一後續步驟時,該基體會被妥當地下放於該旋轉台上,特別是在該旋轉台的各銷之間。下放較好是藉由該旋轉台與該抓持器之間沿該旋轉台之一 旋轉軸線的相對運動來完成,其中該抓持器的抬高銷會移動穿過該轉抬的溝槽。
在典型的實施例中,一基體的移除係以一類似的方式來完成。為此目的,一抓持器會被妥當地置於該旋轉台上的基體下方,而使該抓持器的抬高銷能由下方套入該旋轉台的溝檔中。
由於該旋轉台與該抓持器之間沿該旋轉台之一旋轉軸線的相對運動,該抓持器的抬高銷會套入該旋轉台的溝槽中,結果該基體會貼置於該抓持器的三點上,且因此該基體會被由該旋轉台升高。
如一特別較佳的選擇,該滑塊係被置於該基體底下,且該抓持件會被由該基體下方移除。該基體嗣會與該滑塊一起移動由該旋轉台離開。
所謂“相對運動”係用以表示使該抓持器沿該旋轉軸線朝該旋轉台的方向來被移動,及使該旋轉台沿該旋轉軸線朝該抓持器的方向以一升高運動來被移動,兩者皆是可行的。
1‧‧‧旋轉台
3‧‧‧文氏管隙
2‧‧‧上表面
4‧‧‧底部件
5‧‧‧擴散器
6‧‧‧擴散器上表面
7‧‧‧邊緣
8‧‧‧內緣
9‧‧‧底部件上表面
10‧‧‧上緣
11‧‧‧間隙
12‧‧‧邊緣
13‧‧‧孔
14‧‧‧導道
15‧‧‧末端
16‧‧‧銷
17‧‧‧基體
18,19,20‧‧‧溝槽
21‧‧‧抓持器
22,23,24‧‧‧抬高銷
25‧‧‧外緣
26,27‧‧‧旋轉台
28‧‧‧倒角
29‧‧‧圓周
30‧‧‧底部件
31‧‧‧文氏管隙
32‧‧‧上表面
b‧‧‧寬度
D‧‧‧旋轉軸線
d‧‧‧直徑
H‧‧‧高度
p,k‧‧‧箭號方向
本發明之其它優點、特徵和細節將可由以下較佳實例之描述及圖式等而清楚易知,其中:圖1示出一依據本發明的裝置之一旋轉台的立體示意圖;圖2示出圖1所示的旋轉台之一截面側視示意圖;圖3示出一用於一依據本發明的裝置之抓持器的立體示意圖; 圖4示出一依據本發明的裝置之旋轉台的另一實施例與一晶圓之立體示意圖;圖5示出一依據本發明的裝置之旋轉台的另一實施例之側視示意圖;及圖6示出圖5所示的旋轉台之一立體示意圖。
較佳實施例之詳細說明
圖1示出一用於一依據本發明的裝置之旋轉台1。該旋轉台1具有一上表面2可供用於一基體,特別是一晶圓。該旋轉台1具有一圓形形狀。該旋轉台1更具有一文氏管隙3。該文氏管隙3係設在該旋轉台1的上表面2處。
如可由圖2看出,該旋轉台1包含一盤狀的底部件4。
一擴散器5係嵌入該旋轉台1的盤狀底部件4中。該擴散器5的上表面6會形成該上表面2的一部份。
該擴散器5的圓周邊緣7和該旋轉台的盤狀底部件4之一內緣8會形成該文氏管隙3。
在所考量的實施例中,該文氏管隙具有一0.58mm的高度。該高度係由該盤狀底部件4之一底部件上表面9至該擴散器5之一上緣10所測得者。
該旋轉台1具有一旋轉軸線D。
該擴散器5係被以一方式嵌入該旋轉台1的盤狀底部件4中,而使一間隙11會形成於該擴散器5與旋轉台1之間。所界定的邊緣12會突出於該間隙11中。該等邊緣12的 目的係要確保一流經該通道11進入該文氏管隙3中的壓力介質,特別是壓縮空氣,有一界定的壓力分佈。該等邊緣12係形成於該擴散器5之一底面上。
該旋轉台1更包含多數個孔13。該等孔13係被引入該擴散器5中。
該旋轉台1具有一導道14。一壓縮空氣或壓縮介質源(未示出)會連接於該導道14的末端15。
該旋轉台1具有多數個銷16。它們係用來定位該基體或晶圓。由於該基體只會安置於該等銷16之間,故其優點係精確界定地定位於該等銷之間能夠被達成。且,此能使用一感測裝置(未示出)來檢測該基體或晶圓是否已安置在該預定的位置,而有利地令其成為可行的。
示於圖1和2中之依據本發明的旋轉台會操作如下:一基體(未示出),特別是一晶圓,會被放在圖1和2的旋轉台1上。
該旋轉台1會被以一連接於該導道14之末端15的壓縮空氣源來供應壓縮空氣。在該過程中,壓縮空氣會流入該導道14穿過該間隙11,並流出該底部件4的上表面9與該晶圓或基體之間的文氏管隙3。結果,依據文氏管原理,一減低的壓力會被造成,而將該晶圓或基體(未示出)固持於該旋轉台1上,儘管該旋轉台1有一繞該旋轉軸線D的快速旋轉運動。
又,此會阻止被塗敷於該基體之一頂面的處理介 質,例如蝕刻劑或顯影劑,跑到該媒體之一背面上,而損壞或調變該後者。
壓縮空氣會經由該等孔13,在該上表面2與該基體或晶圓之間,流出該導道14。此可防止在該等孔13的區域中形成一真空或一減低的壓力,其能會使該基體向下彎曲而變形它及/或損壞它。
圖3示出一旋轉台的另一實施例26。有一基體17貼置於該旋轉台上。該旋轉台26的構造係實質上類似於旋轉台1。
旋轉台26更具有多數個溝槽18、19和20。該等溝槽係被設在該旋轉台26之一圓周緣25,且其長度對應於該旋轉台之一高度。
又,一依據本發明的裝置包含一抓持器21,如圖4中所示。該抓持器21有三個抬高銷22、23和24。該等抬高銷20~24係被設在一直徑d上。該直徑d實質上對應於一旋轉台1或26之一直徑。
該等溝槽18、19、20係被列設在與該等抬高銷22、23、24相同的角度間隔處。該等溝槽18、19、20較好係同樣地設在該直徑d上。
該依據本發明的裝置具有一旋轉台26操作如下:為能將該晶圓17下放在該旋轉台26上,其會被以一滑塊(未示出)定位於該旋轉台26上方一距離處,其至少相當於該滑塊的高度。
該抓持器21嗣會被移至該晶圓17底下,結果該晶 圓17會以其邊緣貼置在該三個抬高銷22、23、24上。
利用該旋轉台26與該抓持器21間之一相對運動,即藉著朝該旋轉台26的方向降低該抓持器21,或朝該抓持器21的方向升高該旋轉台26,則該晶圓17會被下放在該旋轉台26之一上表面上,如圖3中所示。於此過程中,該等抬高銷22、23、24會滑動穿過圖3的旋轉台26之凹槽18、19、20等。
該抓持器21會相對於該旋轉台26移動,而使該等抬高銷22、23、24能被以箭號方向P朝下移出該等溝槽18、19、20外,且該抓持器21嗣會再被由該旋轉台26移除。
該晶圓17則可被加工處理,例如使用蝕刻劑或顯影劑。
要由該旋轉台26移除該晶圓17時,其程序係實質上類似於下放時,但是反向而行。
該抓持器21會被定位在該旋轉台26處,在該旋轉台26下方,然後相反於箭號方向P移動,而使該等抬高銷22、23、24移入對應的溝槽18、19、20中。結果,該晶圓17會貼置於該等抬高銷22、23、24的頂面上,並與該抓持器21一起由該旋轉台26移離。
該滑塊(未示出)嗣會移至該晶圓17底下,且該晶圓17會與該滑塊一起由該旋轉台26的區域移除。
圖5示出另一旋轉台27。旋轉台27係為實質上類似於旋轉台1和26的設計。旋轉台27包含一倒角28。此亦能在圖6中之該旋轉台27的立體圖中被看到。
因有該倒角28,故在該旋轉台27之一圓周29的上緣已被移除。
該倒角28係被製設在一底部件30上。該底部件30係實質上類似於底部件4的設計。
該倒角28所具的功效係,一介質特別是空氣,會被吹出一文氏管隙31並以箭號方向K轉向。此是有利的,因為該介質特別是空氣,會被導入該旋轉台27下方之一區域中。此所具的優點係在該旋轉台27之一上表面上方之不要的空氣亂流會被避免及/或減少。此係有利的,因為結果一基體的較佳塗層會被達成。這是可能的,因為當有一減少的動流在該旋轉台及/或該基體的上表面上方時,該塗層不會遭受任何動流,且亦因為較少的微粒可被一空氣流沈積在該塗層上。
在旋轉台27之例中,一由該文氏管隙31出現的動流會沿該倒角28之一斜坡的方向,或被該旋轉台27之一上表面32更陡峭地導入該旋轉台27之一上表面下方的區域中。
在所考量的實施例中,該倒角28具有一0.5mm至10mm的寬度b,特別是一1mm至5mm的寬度,較佳為3mm。該倒角28較好具有一0.5mm至10mm的高度h,特別是一1mm至5mm的寬度,較佳為3mm。
1‧‧‧旋轉台
3‧‧‧文氏管隙
4‧‧‧底部件
5‧‧‧擴散器
6‧‧‧擴散器上表面
7‧‧‧邊緣
8‧‧‧內緣
9‧‧‧底部件上表面
10‧‧‧上緣
11‧‧‧間隙
12‧‧‧邊緣
13‧‧‧孔
14‧‧‧導道
15‧‧‧末端
16‧‧‧銷
D‧‧‧旋轉軸線

Claims (11)

  1. 一種用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的裝置,具有一旋轉台,特徵在於:該旋轉台具有一文氏管線。
  2. 如申請專利範圍第1項之裝置,特徵在於:有一壓力介質源。
  3. 如以上申請專利範圍之任一項的裝置,特徵在於:至少有一孔,其係可適於容許排出一壓力介質。
  4. 如以上申請專利範圍之任一項的裝置,特徵在於:該旋轉台具有一碟盤形狀。
  5. 如以上申請專利範圍之任一項的裝置,特徵在於:有一擴散器,其係嵌入該旋轉台中,並形成該文氏管隙。
  6. 如以上申請專利範圍之任一項的裝置,特徵在於:該旋轉台具有多數個溝槽在其外緣上。
  7. 如以上申請專利範圍之任一項的裝置,特徵在於:有一抓持器具有多數個抬高銷。
  8. 如以上申請專利範圍之任一項的裝置,特徵在於:該旋轉枱具有一倒角。
  9. 一種用以機製處理,特別是蝕刻及/或顯影,基體特別是晶圓的方法,特徵在於以下步驟:置放一基體;以一壓力介質供應一文氏管隙;藉一旋轉台旋轉該基體; 施加一機製處理介質於該基體;移除該基體。
  10. 如申請專利範圍第9項之方法,特徵在於置放該基體的步驟包含以下步驟:將該基體置放在一滑塊上;移動該滑塊以使該基體定位於該旋轉台上方;將一抓持器置放於該基體下方,而使該基體貼置於該抓持器的三個抬高銷上;由該基體下方移除該滑塊;藉該旋轉台與該抓持器間之一沿該旋轉台之一旋轉軸線的相對運動將該基體下放在該旋轉台上,其中該抓持器的抬高銷會套入該旋轉台的溝槽內。
  11. 如申請專利範圍第9項的方法,特徵在於該移除一基體的步驟包含以下步驟:將一抓持器置放於在該旋轉台上的基體下方;執行一該旋轉台與該抓持器間沿該旋轉台之一旋轉軸線的相對運動,其中該抓持器的抬高銷會套入該旋轉台的溝槽內,而使該基體貼置於該抓持器的三個點上;將該滑塊置放於該基體下方;由該基體下方移除該抓持器;移動該滑塊與該基體。
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6149576B2 (ja) * 2013-07-29 2017-06-21 住友電気工業株式会社 サセプタ及び製造装置
CN107611287A (zh) * 2014-01-21 2018-01-19 科迪华公司 用于电子装置封装的设备和技术
KR20170016547A (ko) * 2015-08-03 2017-02-14 삼성전자주식회사 척 테이블 및 그를 포함하는 기판 제조 장치
WO2017036523A1 (en) * 2015-09-02 2017-03-09 Wielandts Upmt A chuck for a high precision machine tool
KR20170036953A (ko) * 2015-09-24 2017-04-04 지에스인더스트리(주) 엘이디 공정용 메탈 스트립 장치 및 방법
CN110867360B (zh) * 2019-11-28 2022-04-05 河北工程大学 一种蚀刻光学器件的等离子体蚀刻装置
CN113224203B (zh) * 2021-04-01 2022-12-23 苏州赛莱德自动化科技有限公司 一种太阳能光伏电池生产加工设备
CN113649945B (zh) 2021-10-20 2022-04-15 杭州众硅电子科技有限公司 一种晶圆抛光装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484093A (en) * 1967-07-03 1969-12-16 Sylvania Electric Prod Article holding apparatus
US3730134A (en) * 1970-12-17 1973-05-01 F Kadi Pneumatic wafer spinner and control for same
US4588343A (en) * 1984-05-18 1986-05-13 Varian Associates, Inc. Workpiece lifting and holding apparatus
US5010295A (en) * 1989-06-14 1991-04-23 General Signal Corporation Ball screw supported Z stage
DE69133413D1 (de) * 1990-05-07 2004-10-21 Canon Kk Substratträger des Vakuumtyps
RU2019889C1 (ru) * 1991-06-28 1994-09-15 Воронежский опытный завод микроэлектроники "РИФ" Держатель для полупроводниковых пластин при жидкостной обработке центрифугированием
DE59406900D1 (de) * 1993-02-08 1998-10-22 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige Gegenstände
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
US5421595A (en) * 1994-03-28 1995-06-06 Motorola, Inc. Vacuum chuck with venturi jet for converting positive pressure to a vacuum
US6207231B1 (en) * 1997-05-07 2001-03-27 Tokyo Electron Limited Coating film forming method and coating apparatus
US6318957B1 (en) * 1998-07-10 2001-11-20 Asm America, Inc. Method for handling of wafers with minimal contact
US6279976B1 (en) * 1999-05-13 2001-08-28 Micron Technology, Inc. Wafer handling device having conforming perimeter seal
TW504776B (en) * 1999-09-09 2002-10-01 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
US6631935B1 (en) * 2000-08-04 2003-10-14 Tru-Si Technologies, Inc. Detection and handling of semiconductor wafer and wafer-like objects
US6692219B2 (en) * 2000-11-29 2004-02-17 Tokyo Electron Limited Reduced edge contact wafer handling system and method of retrofitting and using same
JP4766824B2 (ja) * 2000-12-05 2011-09-07 日本空圧システム株式会社 保持具
US6669808B2 (en) * 2001-03-22 2003-12-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20040206304A1 (en) * 2003-04-15 2004-10-21 Menear John Edgar Pressurized chuck for controlling backside wafer contamination
US7654596B2 (en) * 2003-06-27 2010-02-02 Mattson Technology, Inc. Endeffectors for handling semiconductor wafers
JP4312001B2 (ja) * 2003-07-28 2009-08-12 リアライズ・アドバンストテクノロジ株式会社 基板支持装置および基板取り外し方法
WO2005073692A1 (ja) * 2004-01-29 2005-08-11 Nas Giken Inc. 基板検査装置と基板検査方法と回収治具
KR100753302B1 (ko) * 2004-03-25 2007-08-29 이비덴 가부시키가이샤 진공 척, 흡착판, 연마 장치 및 반도체 웨이퍼의 제조 방법
DE102004019731A1 (de) 2004-04-20 2005-11-10 Sse Sister Semiconductor Equipment Gmbh Vorrichtung zum Drehbelacken von Substraten
EP1796143B1 (en) * 2004-09-01 2011-11-23 Nikon Corporation Substrate holder, stage apparatus, and exposure apparatus
US7396022B1 (en) * 2004-09-28 2008-07-08 Kla-Tencor Technologies Corp. System and method for optimizing wafer flatness at high rotational speeds
JP2007273608A (ja) * 2006-03-30 2007-10-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20090031955A1 (en) * 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
TWI368562B (en) * 2008-02-05 2012-07-21 Inotera Memories Inc Holding apparatus and transfer robot
WO2011001767A1 (ja) * 2009-07-03 2011-01-06 国立大学法人東北大学 ウェット処理装置及びウェット処理方法

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