CN103137527A - 用于加工基体的装置以及用于加工基体的方法 - Google Patents

用于加工基体的装置以及用于加工基体的方法 Download PDF

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CN103137527A
CN103137527A CN2012105003401A CN201210500340A CN103137527A CN 103137527 A CN103137527 A CN 103137527A CN 2012105003401 A CN2012105003401 A CN 2012105003401A CN 201210500340 A CN201210500340 A CN 201210500340A CN 103137527 A CN103137527 A CN 103137527A
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rotating disk
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CN103137527B (zh
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普瑞米恩·马夫勒
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Abstract

本发明涉及用于加工基体的装置以及用于加工基体的方法。本发明具体涉及一种用于对基体(17)、尤其是晶片进行加工、尤其是蚀刻和/或显影的装置,所述装置带有旋转盘(1),所述旋转盘(1)具有文式间隙(3)。

Description

用于加工基体的装置以及用于加工基体的方法
技术领域
本发明涉及一种用于对基体、尤其是晶片进行加工、尤其是蚀刻
Figure BDA00002490548000011
和/或显影的装置,以及用于对基体、尤其是晶片进行加工、尤其是蚀刻和/或显影的方法。
背景技术
从现有技术中已知多种不同的用于加工基体的装置。尤其是在半导体技术中已知用于将光刻胶施加到基体上的旋转或回旋涂覆器(Spinnbelacker)。该旋转或回旋涂覆器也被称为“涂布机”。晶片或玻璃片或类似物用作基体。除了该所谓的涂布机之外,从现有技术中也已知用于对基体进行加工、尤其是蚀刻和/或显影的装置。
就此而言,尤其地参考文件EP 1743220A1。该在现有技术中描述的用于旋转涂覆基体的装置记载了回旋涂覆器,其具有可旋转的基体盘以用于水平地支承基体。通过基体盘的旋转分配加工介质。特别的问题是,加工介质也渗透到待处理的基体的后侧上并使其改变。尤其地在两件式的晶片中,这导致后侧的损坏。
发明内容
本发明的目的为,提供一种用于对基体、尤其地圆形的晶片进行加工、尤其地蚀刻和/或显影的装置以用于如此加工晶片,即,不损坏和/或污染基体的后侧,并且提供一种用于此的方法。
根据本发明的实施方式的特征实现了该目的的解决方案。
在典型的实施例中,该用于对基体、尤其是圆形的晶片进行加工、尤其是蚀刻和/或显影的装置包括具有文氏间隙的旋转盘。优选地,通过文氏间隙输出压缩空气或其他介质。由此得到多个优点。第一个优点是,由此基体根据文氏原理被抽吸、被保持在旋转盘上并且尽管旋转盘的旋转而不被甩开。另一优点为,后侧保持干净并且处理介质不会到达后侧上而使其污染或损坏。这对于双侧地涂覆的、或加工的基体来说是尤其有利的。
适宜地,文氏间隙具有0.01mm至0.1mm、优选地0.58mm的间隙尺寸。原则上,该间隙大小与待加工的基体厚度和尺寸相关。
在典型的实施例中,该装置包括压缩空气源。由此得到的优点为,文氏间隙可利用压缩空气或压力介质加载。尤其优选地,该压力介质源适于产生4至8bar、优选地6bar的过压。
优选地,该装置包括限定的棱边以用于实现尤其是在文氏间隙中的限定的压力分布。尤其优选地,该棱边被置于文氏间隙之前。
在典型的实施例中,该装置包括至少一个孔。优选地,该至少一个孔布置在旋转盘的面对基体的中间的区域中。优选地,在表面中布置多个孔。由此得到的优点为,防止在旋转盘和基体的中间的区域之间产生负压或真空。这是有利的,因为防止基体在中间的区域中弯曲或以其它方式变形。
在典型的实施例中,旋转盘具有壳状。由此得到的优点为,该旋转盘非常坚固且可简单地且经济地制造。
在典型的实施例中,该装置具有扩散器。优选地,该扩散器被状入旋转盘的内部空间中。尤其优选地,扩散器与旋转盘一起形成文氏间隙。更为优选地,该扩散器利用其表面至少部分地形成这样的面,即,在其中可在晶片和表面之间形成真空。
尤其优选地,扩散器利用其下侧形成这样的棱边,即,其用于在旋转盘的表面和扩散器的下侧之间确保压力介质的限定的压力分布。
尤其优选地,该装置、尤其是旋转盘包括多个、优选地三个或四个销。有利地,这些销导致,晶片滑到在销之间的预定的位置中。在支承在销中的一个上时,通过传感器单元识别该情况并且不开始加工过程。
在典型的实施例中,该装置包括具有多个槽的旋转盘。优选地,这些槽布置在旋转盘的一个圆周棱边处。优选地,如此布置该槽,即,当其位置正确时晶片或基体伸出超过该槽。
在典型的实施例中,该装置包括抓具。优选地,抓具包括多个抬起销。优选地,抓具的抬起销以与旋转盘上的槽相同的角间距布置。优选地,该抓具的抬起销布置在这样的直径上,即该直径相应于旋转盘的槽布置在其上的直径。由此得到的优点为,利用抓具的抬起销可作用到旋转盘的槽中,从而晶片或基体可放置在抓具的抬起销上。
此外有利的是,抓具也可用于将晶片放置在盘上,而不损坏抓具。
在典型的实施例中,如此构造旋转盘,即,在旋转盘的表面之下的区域中引导从文氏间隙中离开的介质流或空气流。由此得到的优点为,实现更好的涂覆。这是可能的,因为避免或减小了在表面以及由此基体上的流动。通过减小或避免在基体上的该流动实现更好的覆层施加。首先,在涂覆时更少地搅动涂覆介质。此外,所施加的覆层也不被暴露在流动中,由此实现更好的干燥效果。最终,通过避免或减小在基体盘或基体的表面上的流动避免扬起可落到新覆层上的污物或颗粒。
优选地,旋转盘此外具有倒棱。尤其优选地,该倒棱布置在旋转盘、尤其地旋转盘的下部件的上部的圆周棱边处。
优选地,该倒棱具有0.5mm至10mm的宽度、尤其地1mm至5mm、优选地3mm的宽度。优选地,该倒棱具有0.5mm至10mm的高度、尤其地1mm至5mm、优选地3mm的宽度/高度。
适宜地,在旋转盘的表面的轴线和倒棱的表面的轴线之间构成的角度在5°和85°、优选地20°至50°之间、尤其地为48°。
尤其要求保护一种用于对基体、尤其是圆形的晶片进行加工、尤其是蚀刻和/或显影的方法提出保护,该方法带有步骤:使旋转盘旋转、将加工介质施加到旋转盘上、取下基体。
在典型的实施例中,为了放置基体定位有滑动件(Schieber)。在此,基体位于滑动件上。优选地,该滑动件为可线性地运动的元件。适宜地,如此使滑动件移动,即,使基体定位在旋转盘上。紧接着,如此定位在滑动件之下的抓具和定位基体,即,基体位于抓具的三个抬起销上。适宜地,优选地通过线性的运动移除在基体之下的滑动件。优选地,在紧接着的步骤中将基体放置在旋转盘上、尤其地在旋转盘的销之间。优选地,通过在旋转盘和抓具之间的沿着旋转轴盘的旋转轴线的相对运动进行该放置,其中,抓具的抬起销移动通过旋转盘的槽。
在典型的实施例中,基体的取下类似地进行。为此优选地,抓具被定位在旋转盘处的基体之下,从而抓具的抬起销可从下作用到旋转盘的槽中。
通过在旋转盘和抓具之间沿着旋转盘的旋转轴线的相对运动,抓具的抬起销作用到旋转盘的槽中,从而基体放置在抓具的三个点上,从而从旋转盘上抬起基体。
尤其优选地,滑动件定位在基体之下并且移除在基体之下的抓具。紧接着,利用滑动件使基体移动离开旋转盘。
概念“相对运动”指的是,不仅可使抓具沿着旋转轴线朝旋转盘的方向运动,而且可通过往复直线运动使旋转盘沿着旋转轴线朝抓具的方向运动。
附图说明
从以下对优选的实施例以及根据附图的描述中得到本发明的其它优点、特征和细节。其中:
图1以示意性的图示示出了根据本发明的装置的旋转盘的透视图;
图2显示了根据图1的旋转盘的剖切的侧视图的示意性的图示;
图3显示了用于根据本发明的装置的抓具的透视图的示意性的图示;
图4以带有晶片的方式显示了用于根据本发明的装置的旋转盘的另一实施例的透视的视图的示意性的图示;
图5显示了根据本发明的装置的旋转盘的另一实施例的侧视图的示意性的图示;
图6显示了根据图5的旋转盘的透视图的示意性的图示。
参考标号列表
1旋转盘
2上表面
3文氏间隙
4下部件
5扩散器
6扩散器表面
7棱边
8内边缘
9下部件表面
10上棱边
11间隙
12棱边
13孔
14通道
15端部
16销
17基体
18槽
19槽
20槽
21抓具
22抬起销
23抬起销
24抬起销
25外棱边
26旋转盘
27旋转盘
28倒棱
29圆周
30下部件
31文氏间隙
32上表面
D旋转轴线
d直径
p箭头方向
K箭头方向
b宽度
H高度
具体实施方式
图1显示了用于根据本发明的装置的旋转盘1。该旋转盘1具有用于基体、尤其是晶片的表面2。该旋转盘1具有圆形。此外,旋转盘1具有文氏间隙3。该文氏间隙3布置在旋转盘1的表面2上。
如可在图2中看出的那样,该旋转盘1包括壳状的下部件4。
该旋转盘1的壳状的下部件4中装入扩散器5。该扩散器5与其表面6一起形成表面2的一部分。
扩散器5利用其环绕的棱边7和旋转盘的壳状的下部件4的内部的边缘8一起形成文氏间隙3。
在该实施例中,文氏间隙具有0.58mm的高度。从罩形的下部件4的下部件表面9到扩散器5的上棱边10测得该高度。
旋转盘1具有旋转轴线D。
扩散器5如此装入旋转盘1的壳状的下部件4中,即,在扩散器5和旋转盘1之间形成间隙11。限定的棱边12伸入到该间隙11中。该棱边12具有用于对通过通道11流入文氏间隙3中的压力介质、尤其是压缩空气限定的压力分配的作用。棱边12构造在扩散器5的下侧上。
此外,旋转盘1包括多个孔13。这些孔13被引入扩散器5中。
旋转盘1具有通道14。在通道14的一个端部15上连接有未示出的压缩空气或压力介质源。
旋转盘1具有多个销16。这些销16用于定位基体或晶片。由于基体仅仅可位于销16之间,得到的优点为,在销之间可实现准确地限定的定位。此外,以这种方式有利地可通过未显示的传感器装置探测,基体或晶片是否已经位于预定的位置中。
根据图1和2的根据本发明的旋转盘的工作方式如下:
将未示出的基体、尤其是圆形的晶片被放置到图1和2的旋转盘1上。
通过连接在通道14的端部15上的压缩空气源利用压缩空气加载该旋转盘1。此时,流入通道14中的压缩空气流动通过间隙11并且从下部件4的下部件表面9和晶片或基体之间的文氏间隙3中流出。由此,根据文氏原理产生负压,尽管旋转盘1绕旋转轴线D的快速的旋转运动,该负压将晶片或未示出的基体保持在旋转盘1上。
此外,由此防止被施加在基体的上侧上的处理介质、例如蚀刻介质或显影剂到达介质(基体)的后侧上并且使其损坏或改变。
压缩空气通过孔13从通道14中流入表面2和基体或晶片之间。由此防止,在孔13的区域中形成真空或负压,所述真空或负压使基体向下弯曲、变形和/或损坏。
图3显示了旋转盘26的另一实施例。在该旋转盘26上存在基体17。旋转盘26基本上与旋转盘1类似地构成。
旋转盘26还具有多个槽18、19和20。这些槽被引入在旋转盘26的圆周棱25上并且具有相应于旋转盘的高度的位置。
此外,根据本发明的装置包括抓具21,如在图4中示出的那样。该抓具21具有三个抬起销22、23和24。抬起销22至24布置在直径d上。该直径d基本上相应于旋转盘1或26的直径。
槽18、19和20以与抬起销22、23和24相同的角间距布置。优选地,槽18,19和20同样布置在直径d上。
带有旋转盘26的根据本发明的装置的工作方式如下:
为了将晶片17放置到旋转盘26上,利用未示出的滑动件将晶片17以至少相应于滑动件的高度的间距定位在旋转盘26之上。
之后,使抓具21移动到晶片17之下,从而晶片17以其边缘支承在三个抬起销22、23和24上。
紧接着,通过在旋转盘26和抓具21之间的相对运动、即或者通过抓具21朝旋转盘26的方向的下降或者旋转盘26朝抓具21的方向抬起将晶片17放置在旋转盘26的表面上,如在图3中显示的那样。在此,抬起销22、23和24滑动穿过图3的旋转盘26的槽18、19和20。
如此使抓具21相对于旋转盘26运动,即,抬起销22、23和24向下在箭头方向P上从槽18、19和20中移出,之后抓具21再次远离旋转盘26。
现在,可以例如利用蚀刻介质或显影剂加工该晶片17。
为了从旋转盘26处取下晶片17,基本上与放置类似地但是以相反的顺序进行。
抓具21在旋转盘26之下定位到旋转盘26上并且之后与箭头方向P相反地以抬起销22、23和24运动到相应的槽18、19和20中。由此,晶片17位于抬起销22、23和24的上侧上,并且利用抓具21远离旋转盘26运动。
紧接着,使未示出的滑动件运动到晶片17之下,并且利用滑动件将晶片17从旋转盘26的区域中取出。
图5显示了另一旋转盘27。该旋转盘27基本上与旋转盘1或26中的一个类似地构成。该旋转盘27包括倒棱28。这也可在图6中的旋转盘27的透视的图示中看出。
利用倒棱28除去旋转盘27的在圆周29上的上部的棱边。
该倒棱28设置在下部件30中。该下部件30基本上与下部件4相似地构造。
通过该倒棱28得到这样的效果,即,将介质、尤其是空气从文氏间隙31中吹出并且在箭头方向K上导出。这是有利的,因为将介质尤其是空气导入在旋转盘27之下的区域中。由此得到的优点为,避免和/或减小在旋转盘27的表面32上的不期望的空气涡流。这是有利的,因为由此实现了基体的更好的涂覆。这是可能的,因为在旋转盘或基体的表面上流动较小时覆层不会受流动的影响并且空气流动中的颗粒也更少地施加到覆层上。
在旋转盘27中,从文氏间隙31中流出的流在倒棱28的倾斜的方向上或更陡地从旋转盘27的表面32被引导到在旋转盘27的表面之下的区域中。
在该实施例中,倒棱28具有0.5mm至10mm的宽度b、尤其是1mm至5mm、优选地3mm的宽度。优选地,倒棱28具有0.5mm至10mm的高度h、尤其是1mm至5mm、优选地3mm的宽度/高度。

Claims (11)

1.一种用于对基体(17)、尤其是晶片机械加工、尤其是蚀刻和/或显影的装置,所述装置带有旋转盘(1),其特征在于,所述旋转盘(1)具有文式间隙(3)。
2.根据权利要求1所述的装置,其特征在于,所述装置具有压力介质源。
3.根据前述权利要求中任一项所述的装置,其特征在于,所述装置具有至少一个孔(13),所述孔适于排出压力介质。
4.根据前述权利要求中任一项所述的装置,其特征在于,所述旋转盘(1)具有壳状。
5.根据前述权利要求中任一项所述的装置,其特征在于,所述装置具有扩散器(5),所述扩散器装入所述旋转盘(1)中并且形成所述文式间隙(3)。
6.根据前述权利要求中任一项所述的装置,其特征在于,所述旋转盘(26)在其外棱边(25)处具有多个槽(18,19,20)。
7.根据前述权利要求中任一项所述的装置,其特征在于,所述装置包括带有多个抬起销(22,23,24)的抓具(21)。
8.根据前述权利要求中任一项所述的装置,其特征在于,所述旋转盘(27)具有倒棱(28)。
9.一种用于对基体(17)、尤其是晶片进行加工、尤其是蚀刻和/或显影的方法,其特征在于步骤:
-放置基体(17),
-利用压力介质加载文式间隙(3),
-借助于所述旋转盘(26)使所述基体(17)旋转,
-向所述基体(17)中施加加工介质,
-取下所述基体(17)。
10.根据权利要求9所述的方法,其特征在于,所述放置基体(17)的步骤包括以下步骤:
-将所述基体(17)定位在滑动件上,
-使所述滑动件移动,以使得将所述基体(17)定位在所述旋转盘(26)上,
-将抓具(21)定位在所述基体(17)之下,以使得所述基体(17)放置在所述抓具(21)的三个抬起销(22,23,24)上,
-移除在所述基体(17)之下的滑动件,
-通过在所述旋转盘(26)和所述抓具(21)之间的沿着所述旋转盘(26)的旋转轴线(D)的相对运动将所述基体(17)放置在所述旋转盘(26)上,其中,所述抓具(21)的抬起销(22,23,24)接合到所述旋转盘(26)的槽(18,19,20)中。
11.根据权利要求9所述的方法,其特征在于,所述取下基体(17)的步骤包括步骤:
-将所述抓具(21)在所述基体(17)之下定位在所述旋转盘(26)上,
-进行在所述旋转盘(26)和所述抓具(21)之间的沿着所述旋转盘(26)的旋转轴线(D)的相对运动,其中,所述抓具(21)的抬起销(22,23,24)接合到所述旋转盘(26)的槽(18,19,20)中,从而所述基体(17)放置在所述抓具(21)的三个点上,
-将所述滑动件定位在所述基体(17)之下,
-移除在所述基体(17)之下的抓具(21),
-使带有所述基体(17)的滑动件移动。
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