RU2012148429A - Устройство для обработки подложки и соответствующий способ - Google Patents

Устройство для обработки подложки и соответствующий способ Download PDF

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RU2012148429A
RU2012148429A RU2012148429/28A RU2012148429A RU2012148429A RU 2012148429 A RU2012148429 A RU 2012148429A RU 2012148429/28 A RU2012148429/28 A RU 2012148429/28A RU 2012148429 A RU2012148429 A RU 2012148429A RU 2012148429 A RU2012148429 A RU 2012148429A
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substrate
plate
rotary plate
sliding element
positioning
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RU2620788C2 (ru
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Пирмин МУФЛЕР
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золар-земи ГмбХ
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B44DECORATIVE ARTS
    • B44CPRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22Removing surface-material, e.g. by engraving, by etching
    • B44C1/227Removing surface-material, e.g. by engraving, by etching by etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23BTURNING; BORING
    • B23B31/00Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02Chucks
    • B23B31/24Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/30Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
    • B23B31/307Vacuum chucks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B25HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25BTOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005Vacuum work holders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • H01L21/30655Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3021Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/141Associated with semiconductor wafer handling includes means for gripping wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00Chucks or sockets
    • Y10T279/11Vacuum

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

1. Устройство для обработки, в частности для травления и/или проявления подложек (17), в частности пластин, содержащее вращательную тарелку (1), отличающееся тем, что вращательная тарелка (1) имеет зазор (3) Вентури.2. Устройство по п.1, отличающееся тем, что оно содержит источник среды под давлением.3. Устройство по п.1 или 2, отличающееся тем, что оно имеет по меньшей мере одно отверстие (13) для выпуска среды под давлением.4. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (1) имеет чашеобразную форму.5. Устройство по п.1 или 2, отличающееся тем, что оно содержит диффузор (5), который вставлен во вращательную тарелку (1) и образует зазор (3) Вентури.6. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (26) имеет на своем наружном крае (25) множество пазов (18, 19, 20).7. Устройство по п.1 или 2, отличающееся тем, что оно содержит захват (21), имеющий множество подъемных штырей (22, 23, 24).8. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (27) имеет фаску (28).9. Способ обработки, в частности травления и/или проявления, подложек (17), в частности пластин, отличающийся тем, что он включает следующие операции:- укладку подложки (17),- подачу в зазор (3) Вентури среды под давлением,- вращение подложки (17) при помощи вращательной тарелки (26),- нанесение обрабатывающего средства на подложку (17) и- снятие подложки (17).10. Способ по п.9, отличающийся тем, что операция укладки подложки (17) включает:- позиционирование подложки (17) на выдвижном элементе,- перемещение выдвижного элемента так, что подложка (17) позиционируется над вращательной тарелкой (26),- позиционирование захвата (21) под подложкой (17) так, что подложка (17) опирается на три по�

Claims (11)

1. Устройство для обработки, в частности для травления и/или проявления подложек (17), в частности пластин, содержащее вращательную тарелку (1), отличающееся тем, что вращательная тарелка (1) имеет зазор (3) Вентури.
2. Устройство по п.1, отличающееся тем, что оно содержит источник среды под давлением.
3. Устройство по п.1 или 2, отличающееся тем, что оно имеет по меньшей мере одно отверстие (13) для выпуска среды под давлением.
4. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (1) имеет чашеобразную форму.
5. Устройство по п.1 или 2, отличающееся тем, что оно содержит диффузор (5), который вставлен во вращательную тарелку (1) и образует зазор (3) Вентури.
6. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (26) имеет на своем наружном крае (25) множество пазов (18, 19, 20).
7. Устройство по п.1 или 2, отличающееся тем, что оно содержит захват (21), имеющий множество подъемных штырей (22, 23, 24).
8. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (27) имеет фаску (28).
9. Способ обработки, в частности травления и/или проявления, подложек (17), в частности пластин, отличающийся тем, что он включает следующие операции:
- укладку подложки (17),
- подачу в зазор (3) Вентури среды под давлением,
- вращение подложки (17) при помощи вращательной тарелки (26),
- нанесение обрабатывающего средства на подложку (17) и
- снятие подложки (17).
10. Способ по п.9, отличающийся тем, что операция укладки подложки (17) включает:
- позиционирование подложки (17) на выдвижном элементе,
- перемещение выдвижного элемента так, что подложка (17) позиционируется над вращательной тарелкой (26),
- позиционирование захвата (21) под подложкой (17) так, что подложка (17) опирается на три подъемных штыря (22, 23, 24) захвата (21),
- удаление выдвижного элемента под подложкой (17),
- укладку подложки (17) на вращательную тарелку (26) путем перемещения тарелки (26) и захвата (21) друг относительно друга вдоль оси (D) вращения тарелки (26), при этом подъемные штыри (22, 23, 24) захвата (21) входят в пазы (18, 19, 20) вращательной тарелки (26).
11. Способ по п.9, отличающийся тем, что операция снятия подложки (17) включает:
- позиционирование захвата (21) под подложкой (17) на вращательной тарелке (26),
- перемещение вращательной тарелки (26) и захвата (21) друг относительно друга вдоль оси (D) вращения тарелки (26), при этом подъемные штыри (22, 23, 24) захвата (21) входят в пазы (18, 19, 20) вращательной тарелки (26), так что подложка (17) опирается на три точки захвата (21),
- позиционирование выдвижного элемента под подложкой (17),
- удаление захвата (21) под подложкой (17),
- перемещение выдвижного элемента с подложкой (17).
RU2012148429A 2011-12-01 2012-11-15 Устройство для обработки подложки и соответствующий способ RU2620788C2 (ru)

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Application Number Priority Date Filing Date Title
DE102011055910.8 2011-12-01
DE102011055910 2011-12-01
DE201210100825 DE102012100825A1 (de) 2011-12-01 2012-02-01 Vorrichtung zum Bearbeiten eines Substrats und Verfahren hierzu
DE102012100825.6 2012-02-01

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RU2620788C2 RU2620788C2 (ru) 2017-05-29

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US (2) US9004497B2 (ru)
KR (1) KR101971086B1 (ru)
CN (1) CN103137527B (ru)
DE (2) DE102012100825A1 (ru)
RU (1) RU2620788C2 (ru)
SG (1) SG190557A1 (ru)
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DE202012013639U1 (de) 2018-12-06
CN103137527B (zh) 2018-02-06
KR20130061644A (ko) 2013-06-11
US9004497B2 (en) 2015-04-14
US9431284B2 (en) 2016-08-30
TWI569360B (zh) 2017-02-01
SG190557A1 (en) 2013-06-28
RU2620788C2 (ru) 2017-05-29
DE102012100825A1 (de) 2013-06-06
KR101971086B1 (ko) 2019-08-13
TW201327720A (zh) 2013-07-01
US20130140274A1 (en) 2013-06-06
CN103137527A (zh) 2013-06-05

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