RU2012148429A - Устройство для обработки подложки и соответствующий способ - Google Patents

Устройство для обработки подложки и соответствующий способ Download PDF

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RU2012148429A
RU2012148429A RU2012148429/28A RU2012148429A RU2012148429A RU 2012148429 A RU2012148429 A RU 2012148429A RU 2012148429/28 A RU2012148429/28 A RU 2012148429/28A RU 2012148429 A RU2012148429 A RU 2012148429A RU 2012148429 A RU2012148429 A RU 2012148429A
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substrate
plate
rotary plate
sliding element
positioning
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RU2012148429/28A
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RU2620788C2 (ru
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Пирмин МУФЛЕР
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золар-земи ГмбХ
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B44—DECORATIVE ARTS
    • B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
    • B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
    • B44C1/22—Removing surface-material, e.g. by engraving, by etching
    • B44C1/227—Removing surface-material, e.g. by engraving, by etching by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23B—TURNING; BORING
    • B23B31/00—Chucks; Expansion mandrels; Adaptations thereof for remote control
    • B23B31/02—Chucks
    • B23B31/24—Chucks characterised by features relating primarily to remote control of the gripping means
    • B23B31/30—Chucks characterised by features relating primarily to remote control of the gripping means using fluid-pressure means in the chuck
    • B23B31/307—Vacuum chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
    • B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
    • B25B11/005—Vacuum work holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00—Material or article handling
    • Y10S414/135—Associated with semiconductor wafer handling
    • Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/11—Vacuum

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

1. Устройство для обработки, в частности для травления и/или проявления подложек (17), в частности пластин, содержащее вращательную тарелку (1), отличающееся тем, что вращательная тарелка (1) имеет зазор (3) Вентури.2. Устройство по п.1, отличающееся тем, что оно содержит источник среды под давлением.3. Устройство по п.1 или 2, отличающееся тем, что оно имеет по меньшей мере одно отверстие (13) для выпуска среды под давлением.4. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (1) имеет чашеобразную форму.5. Устройство по п.1 или 2, отличающееся тем, что оно содержит диффузор (5), который вставлен во вращательную тарелку (1) и образует зазор (3) Вентури.6. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (26) имеет на своем наружном крае (25) множество пазов (18, 19, 20).7. Устройство по п.1 или 2, отличающееся тем, что оно содержит захват (21), имеющий множество подъемных штырей (22, 23, 24).8. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (27) имеет фаску (28).9. Способ обработки, в частности травления и/или проявления, подложек (17), в частности пластин, отличающийся тем, что он включает следующие операции:- укладку подложки (17),- подачу в зазор (3) Вентури среды под давлением,- вращение подложки (17) при помощи вращательной тарелки (26),- нанесение обрабатывающего средства на подложку (17) и- снятие подложки (17).10. Способ по п.9, отличающийся тем, что операция укладки подложки (17) включает:- позиционирование подложки (17) на выдвижном элементе,- перемещение выдвижного элемента так, что подложка (17) позиционируется над вращательной тарелкой (26),- позиционирование захвата (21) под подложкой (17) так, что подложка (17) опирается на три по�

Claims (11)

1. Устройство для обработки, в частности для травления и/или проявления подложек (17), в частности пластин, содержащее вращательную тарелку (1), отличающееся тем, что вращательная тарелка (1) имеет зазор (3) Вентури.
2. Устройство по п.1, отличающееся тем, что оно содержит источник среды под давлением.
3. Устройство по п.1 или 2, отличающееся тем, что оно имеет по меньшей мере одно отверстие (13) для выпуска среды под давлением.
4. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (1) имеет чашеобразную форму.
5. Устройство по п.1 или 2, отличающееся тем, что оно содержит диффузор (5), который вставлен во вращательную тарелку (1) и образует зазор (3) Вентури.
6. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (26) имеет на своем наружном крае (25) множество пазов (18, 19, 20).
7. Устройство по п.1 или 2, отличающееся тем, что оно содержит захват (21), имеющий множество подъемных штырей (22, 23, 24).
8. Устройство по п.1 или 2, отличающееся тем, что вращательная тарелка (27) имеет фаску (28).
9. Способ обработки, в частности травления и/или проявления, подложек (17), в частности пластин, отличающийся тем, что он включает следующие операции:
- укладку подложки (17),
- подачу в зазор (3) Вентури среды под давлением,
- вращение подложки (17) при помощи вращательной тарелки (26),
- нанесение обрабатывающего средства на подложку (17) и
- снятие подложки (17).
10. Способ по п.9, отличающийся тем, что операция укладки подложки (17) включает:
- позиционирование подложки (17) на выдвижном элементе,
- перемещение выдвижного элемента так, что подложка (17) позиционируется над вращательной тарелкой (26),
- позиционирование захвата (21) под подложкой (17) так, что подложка (17) опирается на три подъемных штыря (22, 23, 24) захвата (21),
- удаление выдвижного элемента под подложкой (17),
- укладку подложки (17) на вращательную тарелку (26) путем перемещения тарелки (26) и захвата (21) друг относительно друга вдоль оси (D) вращения тарелки (26), при этом подъемные штыри (22, 23, 24) захвата (21) входят в пазы (18, 19, 20) вращательной тарелки (26).
11. Способ по п.9, отличающийся тем, что операция снятия подложки (17) включает:
- позиционирование захвата (21) под подложкой (17) на вращательной тарелке (26),
- перемещение вращательной тарелки (26) и захвата (21) друг относительно друга вдоль оси (D) вращения тарелки (26), при этом подъемные штыри (22, 23, 24) захвата (21) входят в пазы (18, 19, 20) вращательной тарелки (26), так что подложка (17) опирается на три точки захвата (21),
- позиционирование выдвижного элемента под подложкой (17),
- удаление захвата (21) под подложкой (17),
- перемещение выдвижного элемента с подложкой (17).
RU2012148429A 2011-12-01 2012-11-15 Устройство для обработки подложки и соответствующий способ RU2620788C2 (ru)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102011055910.8 2011-12-01
DE102011055910 2011-12-01
DE201210100825 DE102012100825A1 (de) 2011-12-01 2012-02-01 Vorrichtung zum Bearbeiten eines Substrats und Verfahren hierzu
DE102012100825.6 2012-02-01

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RU2620788C2 RU2620788C2 (ru) 2017-05-29

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US (2) US9004497B2 (ru)
KR (1) KR101971086B1 (ru)
CN (1) CN103137527B (ru)
DE (2) DE102012100825A1 (ru)
RU (1) RU2620788C2 (ru)
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6149576B2 (ja) * 2013-07-29 2017-06-21 住友電気工業株式会社 サセプタ及び製造装置
KR102307190B1 (ko) * 2014-01-21 2021-09-30 카티바, 인크. 전자 장치 인캡슐레이션을 위한 기기 및 기술
KR20170016547A (ko) * 2015-08-03 2017-02-14 삼성전자주식회사 척 테이블 및 그를 포함하는 기판 제조 장치
CN108367366B (zh) * 2015-09-02 2020-01-24 韦兰德斯有限公司 用于高精密机床的卡盘
KR20170036953A (ko) * 2015-09-24 2017-04-04 지에스인더스트리(주) 엘이디 공정용 메탈 스트립 장치 및 방법
CN110867360B (zh) * 2019-11-28 2022-04-05 河北工程大学 一种蚀刻光学器件的等离子体蚀刻装置
CN113224203B (zh) * 2021-04-01 2022-12-23 苏州赛莱德自动化科技有限公司 一种太阳能光伏电池生产加工设备
CN113649945B (zh) * 2021-10-20 2022-04-15 杭州众硅电子科技有限公司 一种晶圆抛光装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484093A (en) * 1967-07-03 1969-12-16 Sylvania Electric Prod Article holding apparatus
US3730134A (en) * 1970-12-17 1973-05-01 F Kadi Pneumatic wafer spinner and control for same
US4588343A (en) * 1984-05-18 1986-05-13 Varian Associates, Inc. Workpiece lifting and holding apparatus
US5010295A (en) * 1989-06-14 1991-04-23 General Signal Corporation Ball screw supported Z stage
DE69133413D1 (de) * 1990-05-07 2004-10-21 Canon Kk Substratträger des Vakuumtyps
RU2019889C1 (ru) * 1991-06-28 1994-09-15 Воронежский опытный завод микроэлектроники "РИФ" Держатель для полупроводниковых пластин при жидкостной обработке центрифугированием
ATE171306T1 (de) * 1993-02-08 1998-10-15 Sez Semiconduct Equip Zubehoer Träger für scheibenförmige gegenstände
US5565034A (en) * 1993-10-29 1996-10-15 Tokyo Electron Limited Apparatus for processing substrates having a film formed on a surface of the substrate
US5518542A (en) * 1993-11-05 1996-05-21 Tokyo Electron Limited Double-sided substrate cleaning apparatus
US5421595A (en) * 1994-03-28 1995-06-06 Motorola, Inc. Vacuum chuck with venturi jet for converting positive pressure to a vacuum
US6207231B1 (en) * 1997-05-07 2001-03-27 Tokyo Electron Limited Coating film forming method and coating apparatus
US6318957B1 (en) * 1998-07-10 2001-11-20 Asm America, Inc. Method for handling of wafers with minimal contact
US6279976B1 (en) * 1999-05-13 2001-08-28 Micron Technology, Inc. Wafer handling device having conforming perimeter seal
TW504776B (en) * 1999-09-09 2002-10-01 Mimasu Semiconductor Ind Co Wafer rotary holding apparatus and wafer surface treatment apparatus with waste liquid recovery mechanism
US6631935B1 (en) * 2000-08-04 2003-10-14 Tru-Si Technologies, Inc. Detection and handling of semiconductor wafer and wafer-like objects
US6692219B2 (en) * 2000-11-29 2004-02-17 Tokyo Electron Limited Reduced edge contact wafer handling system and method of retrofitting and using same
WO2002047155A1 (fr) * 2000-12-05 2002-06-13 Nippon Pneumatics/Fluidics System Co., Ltd. Support
US6669808B2 (en) * 2001-03-22 2003-12-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US20040206304A1 (en) * 2003-04-15 2004-10-21 Menear John Edgar Pressurized chuck for controlling backside wafer contamination
US7654596B2 (en) * 2003-06-27 2010-02-02 Mattson Technology, Inc. Endeffectors for handling semiconductor wafers
JP4312001B2 (ja) * 2003-07-28 2009-08-12 リアライズ・アドバンストテクノロジ株式会社 基板支持装置および基板取り外し方法
JP4664818B2 (ja) * 2004-01-29 2011-04-06 有限会社Ｎａｓ技研 基板検査装置と基板検査方法と回収治具
WO2005092564A1 (ja) * 2004-03-25 2005-10-06 Ibiden Co., Ltd. 真空チャックおよび吸着板
DE102004019731A1 (de) 2004-04-20 2005-11-10 Sse Sister Semiconductor Equipment Gmbh Vorrichtung zum Drehbelacken von Substraten
JP4779973B2 (ja) * 2004-09-01 2011-09-28 株式会社ニコン 基板ホルダ及びステージ装置並びに露光装置
US7396022B1 (en) * 2004-09-28 2008-07-08 Kla-Tencor Technologies Corp. System and method for optimizing wafer flatness at high rotational speeds
JP2007273608A (ja) * 2006-03-30 2007-10-18 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US20090031955A1 (en) * 2007-07-30 2009-02-05 Applied Materials, Inc. Vacuum chucking heater of axisymmetrical and uniform thermal profile
TWI368562B (en) * 2008-02-05 2012-07-21 Inotera Memories Inc Holding apparatus and transfer robot
KR101312333B1 (ko) * 2009-07-03 2013-09-27 고쿠리츠다이가쿠호진 도호쿠다이가쿠 웨트 처리 장치 및 웨트 처리 방법

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US9004497B2 (en) 2015-04-14
US9431284B2 (en) 2016-08-30
RU2620788C2 (ru) 2017-05-29
US20150187627A1 (en) 2015-07-02
TWI569360B (zh) 2017-02-01
TW201327720A (zh) 2013-07-01
DE202012013639U1 (de) 2018-12-06
DE102012100825A1 (de) 2013-06-06
SG190557A1 (en) 2013-06-28
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CN103137527A (zh) 2013-06-05
KR20130061644A (ko) 2013-06-11

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