TW201248825A - Electrooptic device substrate, electrooptic device, method of manufacturing electrooptic device, and electronic apparatus - Google Patents
Electrooptic device substrate, electrooptic device, method of manufacturing electrooptic device, and electronic apparatus Download PDFInfo
- Publication number
- TW201248825A TW201248825A TW101110419A TW101110419A TW201248825A TW 201248825 A TW201248825 A TW 201248825A TW 101110419 A TW101110419 A TW 101110419A TW 101110419 A TW101110419 A TW 101110419A TW 201248825 A TW201248825 A TW 201248825A
- Authority
- TW
- Taiwan
- Prior art keywords
- wiring
- terminal
- circuit
- substrate
- photovoltaic device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 claims description 21
- 230000005693 optoelectronics Effects 0.000 claims description 16
- 230000003068 static effect Effects 0.000 abstract description 34
- 230000005611 electricity Effects 0.000 abstract description 32
- 239000004973 liquid crystal related substance Substances 0.000 description 84
- 239000010408 film Substances 0.000 description 49
- 239000010410 layer Substances 0.000 description 42
- 239000003990 capacitor Substances 0.000 description 26
- 239000003566 sealing material Substances 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011071842A JP2012208178A (ja) | 2011-03-29 | 2011-03-29 | 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201248825A true TW201248825A (en) | 2012-12-01 |
Family
ID=46926831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101110419A TW201248825A (en) | 2011-03-29 | 2012-03-26 | Electrooptic device substrate, electrooptic device, method of manufacturing electrooptic device, and electronic apparatus |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20120249944A1 (https=) |
| JP (1) | JP2012208178A (https=) |
| KR (1) | KR20120112140A (https=) |
| CN (1) | CN102738146A (https=) |
| TW (1) | TW201248825A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI634376B (zh) * | 2013-10-11 | 2018-09-01 | 日商精工愛普生股份有限公司 | 靜電保護電路、光電裝置及電子機器 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102193091B1 (ko) * | 2014-05-22 | 2020-12-21 | 엘지디스플레이 주식회사 | 낮은 반사율을 갖는 블랙 매트릭스를 구비한 평판 표시장치 및 그 제조 방법 |
| TWI625847B (zh) * | 2016-09-09 | 2018-06-01 | 友達光電股份有限公司 | 畫素結構及其製作方法 |
| JP6741101B1 (ja) * | 2019-03-05 | 2020-08-19 | セイコーエプソン株式会社 | 電気光学装置、電子機器 |
| CN110610902B (zh) * | 2019-09-25 | 2021-12-14 | 昆山国显光电有限公司 | 屏体制作方法和显示装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0139373B1 (ko) * | 1994-10-06 | 1998-06-15 | 김광호 | 액정표시소자의 정전기 방지 회로 |
| JP3702696B2 (ja) * | 1999-03-11 | 2005-10-05 | セイコーエプソン株式会社 | アクティブマトリクス基板、電気光学装置、およびアクティブマトリクス基板の製造方法 |
| JP3888013B2 (ja) * | 1999-12-10 | 2007-02-28 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
| JP2005352419A (ja) * | 2004-06-14 | 2005-12-22 | Sharp Corp | デバイス基板の製造方法、デバイス基板およびマザー基板 |
| JP2007034275A (ja) * | 2005-06-21 | 2007-02-08 | Canon Inc | 電子部品およびその製造方法 |
| US20070290375A1 (en) * | 2006-06-01 | 2007-12-20 | Chin-Hai Huang | Active device array mother substrate |
| US20080204618A1 (en) * | 2007-02-22 | 2008-08-28 | Min-Kyung Jung | Display substrate, method for manufacturing the same, and display apparatus having the same |
| JP4911169B2 (ja) * | 2008-12-25 | 2012-04-04 | 三菱電機株式会社 | アレイ基板及び表示装置 |
-
2011
- 2011-03-29 JP JP2011071842A patent/JP2012208178A/ja not_active Withdrawn
-
2012
- 2012-03-21 US US13/425,615 patent/US20120249944A1/en not_active Abandoned
- 2012-03-26 TW TW101110419A patent/TW201248825A/zh unknown
- 2012-03-28 KR KR1020120031731A patent/KR20120112140A/ko not_active Withdrawn
- 2012-03-29 CN CN2012100888930A patent/CN102738146A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI634376B (zh) * | 2013-10-11 | 2018-09-01 | 日商精工愛普生股份有限公司 | 靜電保護電路、光電裝置及電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120112140A (ko) | 2012-10-11 |
| US20120249944A1 (en) | 2012-10-04 |
| JP2012208178A (ja) | 2012-10-25 |
| CN102738146A (zh) | 2012-10-17 |
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