JP2012208178A - 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器 - Google Patents

電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器 Download PDF

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Publication number
JP2012208178A
JP2012208178A JP2011071842A JP2011071842A JP2012208178A JP 2012208178 A JP2012208178 A JP 2012208178A JP 2011071842 A JP2011071842 A JP 2011071842A JP 2011071842 A JP2011071842 A JP 2011071842A JP 2012208178 A JP2012208178 A JP 2012208178A
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Japan
Prior art keywords
electro
wiring
optical device
line driving
substrate
Prior art date
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Withdrawn
Application number
JP2011071842A
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English (en)
Japanese (ja)
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JP2012208178A5 (https=
Inventor
Sakahito Yoshii
栄仁 吉井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2011071842A priority Critical patent/JP2012208178A/ja
Priority to US13/425,615 priority patent/US20120249944A1/en
Priority to TW101110419A priority patent/TW201248825A/zh
Priority to KR1020120031731A priority patent/KR20120112140A/ko
Priority to CN2012100888930A priority patent/CN102738146A/zh
Publication of JP2012208178A publication Critical patent/JP2012208178A/ja
Publication of JP2012208178A5 publication Critical patent/JP2012208178A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2011071842A 2011-03-29 2011-03-29 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器 Withdrawn JP2012208178A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2011071842A JP2012208178A (ja) 2011-03-29 2011-03-29 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器
US13/425,615 US20120249944A1 (en) 2011-03-29 2012-03-21 Electrooptic device substrate, electrooptic device, method of manufacturing electrooptic device, and electronic apparatus
TW101110419A TW201248825A (en) 2011-03-29 2012-03-26 Electrooptic device substrate, electrooptic device, method of manufacturing electrooptic device, and electronic apparatus
KR1020120031731A KR20120112140A (ko) 2011-03-29 2012-03-28 전기 광학 장치용 기판, 전기 광학 장치, 전기 광학 장치의 제조 방법, 및 전자 기기
CN2012100888930A CN102738146A (zh) 2011-03-29 2012-03-29 电光装置用基板、电光装置及其制造方法以及电子设备

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011071842A JP2012208178A (ja) 2011-03-29 2011-03-29 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器

Publications (2)

Publication Number Publication Date
JP2012208178A true JP2012208178A (ja) 2012-10-25
JP2012208178A5 JP2012208178A5 (https=) 2014-04-17

Family

ID=46926831

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JP2011071842A Withdrawn JP2012208178A (ja) 2011-03-29 2011-03-29 電気光学装置用基板、電気光学装置、電気光学装置の製造方法、及び電子機器

Country Status (5)

Country Link
US (1) US20120249944A1 (https=)
JP (1) JP2012208178A (https=)
KR (1) KR20120112140A (https=)
CN (1) CN102738146A (https=)
TW (1) TW201248825A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020144179A (ja) * 2019-03-05 2020-09-10 セイコーエプソン株式会社 電気光学装置、電子機器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6079548B2 (ja) 2013-10-11 2017-02-15 セイコーエプソン株式会社 静電気保護回路、電気光学装置、及び電子機器
KR102193091B1 (ko) * 2014-05-22 2020-12-21 엘지디스플레이 주식회사 낮은 반사율을 갖는 블랙 매트릭스를 구비한 평판 표시장치 및 그 제조 방법
TWI625847B (zh) * 2016-09-09 2018-06-01 友達光電股份有限公司 畫素結構及其製作方法
CN110610902B (zh) * 2019-09-25 2021-12-14 昆山国显光电有限公司 屏体制作方法和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08338973A (ja) * 1994-10-06 1996-12-24 Samsung Electron Co Ltd 液晶表示素子の静電気防止回路
JP2000259099A (ja) * 1999-03-11 2000-09-22 Seiko Epson Corp アクティブマトリクス基板、電気光学装置、およびアクティブマトリクス基板の製造方法
JP2001166327A (ja) * 1999-12-10 2001-06-22 Seiko Epson Corp 素子基板装置、その製造方法及びそれを備えた電気光学装置
JP2005352419A (ja) * 2004-06-14 2005-12-22 Sharp Corp デバイス基板の製造方法、デバイス基板およびマザー基板
JP2010152091A (ja) * 2008-12-25 2010-07-08 Mitsubishi Electric Corp アレイ基板及び表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007034275A (ja) * 2005-06-21 2007-02-08 Canon Inc 電子部品およびその製造方法
US20070290375A1 (en) * 2006-06-01 2007-12-20 Chin-Hai Huang Active device array mother substrate
US20080204618A1 (en) * 2007-02-22 2008-08-28 Min-Kyung Jung Display substrate, method for manufacturing the same, and display apparatus having the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08338973A (ja) * 1994-10-06 1996-12-24 Samsung Electron Co Ltd 液晶表示素子の静電気防止回路
JP2000259099A (ja) * 1999-03-11 2000-09-22 Seiko Epson Corp アクティブマトリクス基板、電気光学装置、およびアクティブマトリクス基板の製造方法
JP2001166327A (ja) * 1999-12-10 2001-06-22 Seiko Epson Corp 素子基板装置、その製造方法及びそれを備えた電気光学装置
JP2005352419A (ja) * 2004-06-14 2005-12-22 Sharp Corp デバイス基板の製造方法、デバイス基板およびマザー基板
JP2010152091A (ja) * 2008-12-25 2010-07-08 Mitsubishi Electric Corp アレイ基板及び表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020144179A (ja) * 2019-03-05 2020-09-10 セイコーエプソン株式会社 電気光学装置、電子機器

Also Published As

Publication number Publication date
KR20120112140A (ko) 2012-10-11
US20120249944A1 (en) 2012-10-04
CN102738146A (zh) 2012-10-17
TW201248825A (en) 2012-12-01

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