TW201235729A - Large view field projection lithography objective - Google Patents

Large view field projection lithography objective Download PDF

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Publication number
TW201235729A
TW201235729A TW100148828A TW100148828A TW201235729A TW 201235729 A TW201235729 A TW 201235729A TW 100148828 A TW100148828 A TW 100148828A TW 100148828 A TW100148828 A TW 100148828A TW 201235729 A TW201235729 A TW 201235729A
Authority
TW
Taiwan
Prior art keywords
lens
lens group
positive
refractive index
group
Prior art date
Application number
TW100148828A
Other languages
English (en)
Chinese (zh)
Other versions
TWI477839B (https=
Inventor
Heng Wu
Ling Huang
guo-gan Liu
Original Assignee
Shanghai Microelectronics Equi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Microelectronics Equi filed Critical Shanghai Microelectronics Equi
Publication of TW201235729A publication Critical patent/TW201235729A/zh
Application granted granted Critical
Publication of TWI477839B publication Critical patent/TWI477839B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100148828A 2010-12-31 2011-12-27 Large view field projection lithography objective TW201235729A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010619283.XA CN102540419B (zh) 2010-12-31 2010-12-31 一种大视场投影光刻物镜

Publications (2)

Publication Number Publication Date
TW201235729A true TW201235729A (en) 2012-09-01
TWI477839B TWI477839B (https=) 2015-03-21

Family

ID=46347698

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100148828A TW201235729A (en) 2010-12-31 2011-12-27 Large view field projection lithography objective

Country Status (7)

Country Link
US (1) US20130293859A1 (https=)
EP (1) EP2660638B1 (https=)
JP (1) JP2014506341A (https=)
KR (1) KR101685655B1 (https=)
CN (1) CN102540419B (https=)
TW (1) TW201235729A (https=)
WO (1) WO2012089002A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6511701B2 (ja) * 2014-01-22 2019-05-15 リソテック株式会社 投影光学系、投影露光装置、及びデバイス製造方法
US10139735B2 (en) 2014-06-23 2018-11-27 Asml Netherlands B.V. Lithographic apparatus and method
CN105527701B (zh) * 2014-09-28 2018-06-29 上海微电子装备（集团）股份有限公司 大视场投影光刻物镜
CN113900227B (zh) * 2021-10-09 2022-07-05 中国科学院苏州生物医学工程技术研究所 一种大视场高分辨宽波段的物镜
JP2024055043A (ja) * 2022-10-06 2024-04-18 株式会社エビデント 対物レンズ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01262513A (ja) * 1988-04-13 1989-10-19 Ricoh Co Ltd 複写用可変焦点レンズ
JP3454390B2 (ja) * 1995-01-06 2003-10-06 株式会社ニコン 投影光学系、投影露光装置及び投影露光方法
US5808814A (en) * 1996-07-18 1998-09-15 Nikon Corporation Short wavelength projection optical system
US5986824A (en) * 1998-06-04 1999-11-16 Nikon Corporation Large NA projection lens system with aplanatic lens element for excimer laser lithography
US5969803A (en) * 1998-06-30 1999-10-19 Nikon Corporation Large NA projection lens for excimer laser lithographic systems
DE19905203A1 (de) * 1999-02-09 2000-08-10 Zeiss Carl Fa Reduktions-Projektionsobjektiv der Mikrolithographie
JP2000199850A (ja) * 1999-01-07 2000-07-18 Nikon Corp 投影光学系及び投影露光装置並びにデバイスの製造方法
JP2000356741A (ja) * 1999-06-14 2000-12-26 Canon Inc 投影光学系
JP3503631B2 (ja) * 2001-04-27 2004-03-08 セイコーエプソン株式会社 投映用ズームレンズ及びこれを備えたプロジェクター
JP2004012825A (ja) * 2002-06-07 2004-01-15 Fuji Photo Optical Co Ltd 投影光学系およびそれを用いた投影露光装置
JP2005109286A (ja) * 2003-10-01 2005-04-21 Nikon Corp 投影光学系、露光装置、および露光方法
JP2006147809A (ja) * 2004-11-18 2006-06-08 Canon Inc 露光装置の投影光学系、露光装置およびデバイスの製造方法
JP2008527403A (ja) * 2004-12-30 2008-07-24 カール・ツァイス・エスエムティー・アーゲー 投影光学系
JP4779394B2 (ja) 2005-03-23 2011-09-28 株式会社ニコン 投影光学系、露光装置、および露光方法
JP4792779B2 (ja) * 2005-03-29 2011-10-12 株式会社ニコン ズームレンズ
JP2007079015A (ja) 2005-09-13 2007-03-29 Nikon Corp 投影光学系、露光装置及びマイクロデバイスの製造方法
JP5522520B2 (ja) * 2006-05-05 2014-06-18 カール・ツァイス・エスエムティー・ゲーエムベーハー 光学レンズ系
KR101428136B1 (ko) * 2007-08-03 2014-08-07 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투사 대물렌즈, 투사 노광 장치, 투사 노광 방법 및 광학 보정 플레이트
CN101231378B (zh) * 2007-12-21 2010-11-10 上海微电子装备有限公司 一种全折射式投影光学系统

Also Published As

Publication number Publication date
EP2660638B1 (en) 2015-12-02
CN102540419A (zh) 2012-07-04
KR101685655B1 (ko) 2016-12-12
KR20130141643A (ko) 2013-12-26
CN102540419B (zh) 2014-01-22
JP2014506341A (ja) 2014-03-13
EP2660638A4 (en) 2014-06-25
TWI477839B (https=) 2015-03-21
US20130293859A1 (en) 2013-11-07
WO2012089002A1 (zh) 2012-07-05
EP2660638A1 (en) 2013-11-06

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