CN102540419B - 一种大视场投影光刻物镜 - Google Patents

一种大视场投影光刻物镜 Download PDF

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Publication number
CN102540419B
CN102540419B CN201010619283.XA CN201010619283A CN102540419B CN 102540419 B CN102540419 B CN 102540419B CN 201010619283 A CN201010619283 A CN 201010619283A CN 102540419 B CN102540419 B CN 102540419B
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China
Prior art keywords
lens
positive
lens combination
lens group
combination
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CN201010619283.XA
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English (en)
Chinese (zh)
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CN102540419A (zh
Inventor
武珩
黄玲
刘国淦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Xinshang Microelectronics Technology Co ltd
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Shanghai Micro Electronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to CN201010619283.XA priority Critical patent/CN102540419B/zh
Application filed by Shanghai Micro Electronics Equipment Co Ltd filed Critical Shanghai Micro Electronics Equipment Co Ltd
Priority to KR1020137018676A priority patent/KR101685655B1/ko
Priority to US13/976,353 priority patent/US20130293859A1/en
Priority to EP11852300.0A priority patent/EP2660638B1/en
Priority to PCT/CN2011/083616 priority patent/WO2012089002A1/zh
Priority to JP2013546574A priority patent/JP2014506341A/ja
Priority to TW100148828A priority patent/TW201235729A/zh
Publication of CN102540419A publication Critical patent/CN102540419A/zh
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Publication of CN102540419B publication Critical patent/CN102540419B/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201010619283.XA 2010-12-31 2010-12-31 一种大视场投影光刻物镜 Active CN102540419B (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CN201010619283.XA CN102540419B (zh) 2010-12-31 2010-12-31 一种大视场投影光刻物镜
US13/976,353 US20130293859A1 (en) 2010-12-31 2011-12-07 Large field projection objective for lithography
EP11852300.0A EP2660638B1 (en) 2010-12-31 2011-12-07 Large view field projection lithography objective
PCT/CN2011/083616 WO2012089002A1 (zh) 2010-12-31 2011-12-07 一种大视场投影光刻物镜
KR1020137018676A KR101685655B1 (ko) 2010-12-31 2011-12-07 리소그래피용 대형 필드 투사대물렌즈
JP2013546574A JP2014506341A (ja) 2010-12-31 2011-12-07 リソグラフィーのための広範囲露光対物レンズ
TW100148828A TW201235729A (en) 2010-12-31 2011-12-27 Large view field projection lithography objective

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010619283.XA CN102540419B (zh) 2010-12-31 2010-12-31 一种大视场投影光刻物镜

Publications (2)

Publication Number Publication Date
CN102540419A CN102540419A (zh) 2012-07-04
CN102540419B true CN102540419B (zh) 2014-01-22

Family

ID=46347698

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010619283.XA Active CN102540419B (zh) 2010-12-31 2010-12-31 一种大视场投影光刻物镜

Country Status (7)

Country Link
US (1) US20130293859A1 (https=)
EP (1) EP2660638B1 (https=)
JP (1) JP2014506341A (https=)
KR (1) KR101685655B1 (https=)
CN (1) CN102540419B (https=)
TW (1) TW201235729A (https=)
WO (1) WO2012089002A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6511701B2 (ja) * 2014-01-22 2019-05-15 リソテック株式会社 投影光学系、投影露光装置、及びデバイス製造方法
US10139735B2 (en) 2014-06-23 2018-11-27 Asml Netherlands B.V. Lithographic apparatus and method
CN105527701B (zh) * 2014-09-28 2018-06-29 上海微电子装备（集团）股份有限公司 大视场投影光刻物镜
CN113900227B (zh) * 2021-10-09 2022-07-05 中国科学院苏州生物医学工程技术研究所 一种大视场高分辨宽波段的物镜
JP2024055043A (ja) * 2022-10-06 2024-04-18 株式会社エビデント 対物レンズ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919524A (en) * 1988-04-13 1990-04-24 Ricoh Company, Ltd. Variable focus lens for image reproduction
CN1841112A (zh) * 2005-03-29 2006-10-04 株式会社尼康 变焦透镜系统
CN101438196A (zh) * 2006-05-05 2009-05-20 卡尔·蔡司Smt股份公司 用于微光刻的具有四个透镜组的对称物镜

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3454390B2 (ja) * 1995-01-06 2003-10-06 株式会社ニコン 投影光学系、投影露光装置及び投影露光方法
US5808814A (en) * 1996-07-18 1998-09-15 Nikon Corporation Short wavelength projection optical system
US5986824A (en) * 1998-06-04 1999-11-16 Nikon Corporation Large NA projection lens system with aplanatic lens element for excimer laser lithography
US5969803A (en) * 1998-06-30 1999-10-19 Nikon Corporation Large NA projection lens for excimer laser lithographic systems
DE19905203A1 (de) * 1999-02-09 2000-08-10 Zeiss Carl Fa Reduktions-Projektionsobjektiv der Mikrolithographie
JP2000199850A (ja) * 1999-01-07 2000-07-18 Nikon Corp 投影光学系及び投影露光装置並びにデバイスの製造方法
JP2000356741A (ja) * 1999-06-14 2000-12-26 Canon Inc 投影光学系
JP3503631B2 (ja) * 2001-04-27 2004-03-08 セイコーエプソン株式会社 投映用ズームレンズ及びこれを備えたプロジェクター
JP2004012825A (ja) * 2002-06-07 2004-01-15 Fuji Photo Optical Co Ltd 投影光学系およびそれを用いた投影露光装置
JP2005109286A (ja) * 2003-10-01 2005-04-21 Nikon Corp 投影光学系、露光装置、および露光方法
JP2006147809A (ja) * 2004-11-18 2006-06-08 Canon Inc 露光装置の投影光学系、露光装置およびデバイスの製造方法
JP2008527403A (ja) * 2004-12-30 2008-07-24 カール・ツァイス・エスエムティー・アーゲー 投影光学系
JP4779394B2 (ja) 2005-03-23 2011-09-28 株式会社ニコン 投影光学系、露光装置、および露光方法
JP2007079015A (ja) 2005-09-13 2007-03-29 Nikon Corp 投影光学系、露光装置及びマイクロデバイスの製造方法
KR101428136B1 (ko) * 2007-08-03 2014-08-07 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피용 투사 대물렌즈, 투사 노광 장치, 투사 노광 방법 및 광학 보정 플레이트
CN101231378B (zh) * 2007-12-21 2010-11-10 上海微电子装备有限公司 一种全折射式投影光学系统

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4919524A (en) * 1988-04-13 1990-04-24 Ricoh Company, Ltd. Variable focus lens for image reproduction
CN1841112A (zh) * 2005-03-29 2006-10-04 株式会社尼康 变焦透镜系统
CN101438196A (zh) * 2006-05-05 2009-05-20 卡尔·蔡司Smt股份公司 用于微光刻的具有四个透镜组的对称物镜

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2004-12825A 2004.01.15
JP特开2005-109286A 2005.04.21

Also Published As

Publication number Publication date
EP2660638B1 (en) 2015-12-02
CN102540419A (zh) 2012-07-04
KR101685655B1 (ko) 2016-12-12
KR20130141643A (ko) 2013-12-26
TW201235729A (en) 2012-09-01
JP2014506341A (ja) 2014-03-13
EP2660638A4 (en) 2014-06-25
TWI477839B (https=) 2015-03-21
US20130293859A1 (en) 2013-11-07
WO2012089002A1 (zh) 2012-07-05
EP2660638A1 (en) 2013-11-06

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Address after: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai

Patentee after: SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) Co.,Ltd.

Address before: 201203 1525 Zhang Dong Road, Zhangjiang hi tech park, Pudong District, Shanghai

Patentee before: SHANGHAI MICRO ELECTRONICS EQUIPMENT Co.,Ltd.

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Effective date of registration: 20250710

Address after: 3 / F, building 19, building 8, No. 498, GuoShouJing Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201203

Patentee after: Shanghai Xinshang Microelectronics Technology Co.,Ltd.

Country or region after: China

Address before: 201203 Zhangjiang High Tech Park, Shanghai, Zhang Dong Road, No. 1525

Patentee before: SHANGHAI MICRO ELECTRONICS EQUIPMENT (GROUP) Co.,Ltd.

Country or region before: China