TW201126730A - Solar cell and method for manufacturing the same - Google Patents
Solar cell and method for manufacturing the same Download PDFInfo
- Publication number
- TW201126730A TW201126730A TW099119590A TW99119590A TW201126730A TW 201126730 A TW201126730 A TW 201126730A TW 099119590 A TW099119590 A TW 099119590A TW 99119590 A TW99119590 A TW 99119590A TW 201126730 A TW201126730 A TW 201126730A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- solar cell
- beads
- protective film
- photoelectric conversion
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000011324 bead Substances 0.000 claims abstract description 138
- 238000006243 chemical reaction Methods 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000001681 protective effect Effects 0.000 claims description 74
- 238000000926 separation method Methods 0.000 claims description 74
- 239000010408 film Substances 0.000 claims description 72
- 239000013039 cover film Substances 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 36
- 238000000149 argon plasma sintering Methods 0.000 claims description 23
- 230000001788 irregular Effects 0.000 claims description 23
- 229920006254 polymer film Polymers 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 239000002245 particle Substances 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 96
- 239000004065 semiconductor Substances 0.000 description 59
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 32
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 24
- 239000011787 zinc oxide Substances 0.000 description 16
- 229910000420 cerium oxide Inorganic materials 0.000 description 12
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 230000001965 increasing effect Effects 0.000 description 10
- 238000003698 laser cutting Methods 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 7
- 229910052723 transition metal Inorganic materials 0.000 description 7
- 229910000314 transition metal oxide Inorganic materials 0.000 description 7
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- 239000004575 stone Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 5
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- -1 polyethylene terephthalate Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000003980 solgel method Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
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- 229910052684 Cerium Inorganic materials 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
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- 229910052739 hydrogen Inorganic materials 0.000 description 3
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- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 3
- 229940007718 zinc hydroxide Drugs 0.000 description 3
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241001424688 Enceliopsis Species 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- PHWXUGHIIBDVKD-UHFFFAOYSA-N sitaxentan Chemical compound CC1=NOC(NS(=O)(=O)C2=C(SC=C2)C(=O)CC=2C(=CC=3OCOC=3C=2)C)=C1Cl PHWXUGHIIBDVKD-UHFFFAOYSA-N 0.000 description 1
- 229960002578 sitaxentan Drugs 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 210000000115 thoracic cavity Anatomy 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/48—Back surface reflectors [BSR]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/40—Optical elements or arrangements
- H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
- H10F77/488—Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100005903A KR101244174B1 (ko) | 2010-01-22 | 2010-01-22 | 태양전지 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201126730A true TW201126730A (en) | 2011-08-01 |
Family
ID=44021904
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099119590A TW201126730A (en) | 2010-01-22 | 2010-06-15 | Solar cell and method for manufacturing the same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20110180134A1 (enExample) |
| EP (1) | EP2348538A3 (enExample) |
| JP (1) | JP2011151342A (enExample) |
| KR (1) | KR101244174B1 (enExample) |
| CN (1) | CN102136503A (enExample) |
| TW (1) | TW201126730A (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8563351B2 (en) * | 2010-06-25 | 2013-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing photovoltaic device |
| KR101273059B1 (ko) * | 2011-09-20 | 2013-06-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
| TWI451580B (zh) * | 2011-09-26 | 2014-09-01 | Ind Tech Res Inst | 薄膜太陽能電池之製法 |
| KR101283218B1 (ko) | 2011-10-19 | 2013-07-05 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
| KR101327042B1 (ko) * | 2011-10-25 | 2013-11-07 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
| KR20130045494A (ko) * | 2011-10-26 | 2013-05-06 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
| KR101306450B1 (ko) * | 2011-11-21 | 2013-09-09 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
| US10319872B2 (en) * | 2012-05-10 | 2019-06-11 | International Business Machines Corporation | Cost-efficient high power PECVD deposition for solar cells |
| WO2014203817A1 (ja) * | 2013-06-17 | 2014-12-24 | 株式会社カネカ | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
| CN104465826A (zh) * | 2013-09-18 | 2015-03-25 | 常州亚玛顿股份有限公司 | 高功率高可靠度太阳模块 |
| JP6520126B2 (ja) * | 2015-01-08 | 2019-05-29 | 日立化成株式会社 | 太陽電池モジュール及びそれに用いられる太陽電池の封止樹脂 |
| EP3435424A1 (en) * | 2017-07-27 | 2019-01-30 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | A photovoltaic panel and method of manufacturing the same |
| US10951160B2 (en) * | 2017-11-29 | 2021-03-16 | Saudi Arabian Oil Company | Apparatus for increasing energy yield in bifacial photovoltaic modules |
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| US4663495A (en) * | 1985-06-04 | 1987-05-05 | Atlantic Richfield Company | Transparent photovoltaic module |
| JPS63168056A (ja) * | 1986-12-29 | 1988-07-12 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
| CA2024662A1 (en) * | 1989-09-08 | 1991-03-09 | Robert Oswald | Monolithic series and parallel connected photovoltaic module |
| DE69228079T2 (de) * | 1991-02-21 | 1999-09-16 | Angewandte Solarenergie - Ase Gmbh | Photovoltaische Vorrichtung und Solarmodul mit teilweiser Durchsichtigkeit, und Herstellungsmethode |
| US5656098A (en) * | 1992-03-03 | 1997-08-12 | Canon Kabushiki Kaisha | Photovoltaic conversion device and method for producing same |
| JP2756050B2 (ja) * | 1992-03-03 | 1998-05-25 | キヤノン株式会社 | 光起電力装置 |
| JP3270901B2 (ja) * | 1992-07-25 | 2002-04-02 | 鐘淵化学工業株式会社 | 太陽電池モジュールパネル及びその製造方法 |
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| US6210858B1 (en) * | 1997-04-04 | 2001-04-03 | Fuji Photo Film Co., Ltd. | Anti-reflection film and display device using the same |
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| US7361455B2 (en) * | 2004-03-31 | 2008-04-22 | Intel Corporation | Anti-reflective coatings |
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| DE102007005091B4 (de) * | 2007-02-01 | 2011-07-07 | Leonhard Kurz GmbH & Co. KG, 90763 | Solarzelle |
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| US7982126B2 (en) * | 2007-05-21 | 2011-07-19 | Macfarlane Alexander T | Photovoltaic module with improved heat transfer and recovery potential |
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| US8921688B2 (en) * | 2007-09-12 | 2014-12-30 | Mitsubishi Materials Corporation | Composite film for superstrate solar cell having conductive film and electroconductive reflective film formed by applying composition containing metal nanoparticles and comprising air pores of preset diameter in contact surface |
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| KR101415322B1 (ko) * | 2007-12-26 | 2014-07-04 | 주성엔지니어링(주) | 박막형 태양전지 및 그 제조방법 |
| TWI446555B (zh) * | 2007-12-27 | 2014-07-21 | Ind Tech Res Inst | 太陽能電池之背電極模組 |
| JP2009212414A (ja) * | 2008-03-06 | 2009-09-17 | Citizen Holdings Co Ltd | 太陽電池素子 |
| US8066390B2 (en) * | 2008-04-22 | 2011-11-29 | Fujifilm Corporation | Antiglare film, antireflection film, polarizing plate and image display device |
| GB2461059B (en) * | 2008-06-19 | 2010-09-01 | Renewable Energy Corp Asa | Coating for thin-film solar cells |
| KR20100009249A (ko) * | 2008-07-18 | 2010-01-27 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
| DE102009056128A1 (de) * | 2009-10-27 | 2011-04-28 | Robert Bosch Gmbh | Rückseitenschichtsystem für Dünnschichtsolarmodule, Dünnschichtsolarmodul und Verfahren zur Herstellung eines Rückseitenschichtsystems |
-
2010
- 2010-01-22 KR KR1020100005903A patent/KR101244174B1/ko not_active Expired - Fee Related
- 2010-06-07 EP EP10165098A patent/EP2348538A3/en not_active Withdrawn
- 2010-06-09 US US12/797,314 patent/US20110180134A1/en not_active Abandoned
- 2010-06-11 CN CN201010197823XA patent/CN102136503A/zh active Pending
- 2010-06-11 JP JP2010134188A patent/JP2011151342A/ja active Pending
- 2010-06-15 TW TW099119590A patent/TW201126730A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US20110180134A1 (en) | 2011-07-28 |
| EP2348538A3 (en) | 2012-05-23 |
| EP2348538A2 (en) | 2011-07-27 |
| KR20110086267A (ko) | 2011-07-28 |
| CN102136503A (zh) | 2011-07-27 |
| KR101244174B1 (ko) | 2013-03-25 |
| JP2011151342A (ja) | 2011-08-04 |
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