TW201120985A - Treatment device and method for operating same - Google Patents
Treatment device and method for operating same Download PDFInfo
- Publication number
- TW201120985A TW201120985A TW099123959A TW99123959A TW201120985A TW 201120985 A TW201120985 A TW 201120985A TW 099123959 A TW099123959 A TW 099123959A TW 99123959 A TW99123959 A TW 99123959A TW 201120985 A TW201120985 A TW 201120985A
- Authority
- TW
- Taiwan
- Prior art keywords
- rotating
- floating
- floating body
- rotation
- group
- Prior art date
Links
- 238000011282 treatment Methods 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 49
- 238000007667 floating Methods 0.000 claims abstract description 324
- 230000005291 magnetic effect Effects 0.000 claims abstract description 93
- 238000001179 sorption measurement Methods 0.000 claims abstract description 22
- 239000000696 magnetic material Substances 0.000 claims abstract description 21
- 238000012545 processing Methods 0.000 claims description 139
- 238000005488 sandblasting Methods 0.000 claims description 42
- 238000005259 measurement Methods 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 28
- 239000004575 stone Substances 0.000 claims description 27
- 238000001514 detection method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 230000003746 surface roughness Effects 0.000 claims description 15
- 238000011065 in-situ storage Methods 0.000 claims description 14
- 239000003463 adsorbent Substances 0.000 claims description 12
- 239000003302 ferromagnetic material Substances 0.000 claims description 9
- 230000005284 excitation Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 3
- 235000011089 carbon dioxide Nutrition 0.000 claims description 3
- 230000005672 electromagnetic field Effects 0.000 claims description 3
- 239000003550 marker Substances 0.000 claims 1
- 230000007246 mechanism Effects 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 44
- 239000007789 gas Substances 0.000 description 29
- 238000001816 cooling Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000000137 annealing Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 239000002826 coolant Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 238000006073 displacement reaction Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000012937 correction Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005294 ferromagnetic effect Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007514 turning Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 208000001431 Psychomotor Agitation Diseases 0.000 description 1
- 206010038743 Restlessness Diseases 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009171558 | 2009-07-22 | ||
| JP2009274987 | 2009-12-02 | ||
| JP2010144572A JP5533335B2 (ja) | 2009-07-22 | 2010-06-25 | 処理装置及びその動作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201120985A true TW201120985A (en) | 2011-06-16 |
Family
ID=43499133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099123959A TW201120985A (en) | 2009-07-22 | 2010-07-21 | Treatment device and method for operating same |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20120118504A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP5533335B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR20120030564A (cg-RX-API-DMAC7.html) |
| CN (1) | CN102473670A (cg-RX-API-DMAC7.html) |
| TW (1) | TW201120985A (cg-RX-API-DMAC7.html) |
| WO (1) | WO2011010661A1 (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425331A (zh) * | 2013-09-09 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 转盘定位装置、装载传输系统及等离子体加工设备 |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9548223B2 (en) * | 2011-12-23 | 2017-01-17 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
| JP5937850B2 (ja) * | 2012-02-29 | 2016-06-22 | 株式会社ブリヂストン | 研削方法 |
| JP6010398B2 (ja) * | 2012-08-31 | 2016-10-19 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP5936505B2 (ja) * | 2012-09-25 | 2016-06-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| JP5973299B2 (ja) * | 2012-09-25 | 2016-08-23 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| KR101512560B1 (ko) | 2012-08-31 | 2015-04-15 | 가부시키가이샤 스크린 홀딩스 | 기판처리장치 |
| JP5973300B2 (ja) * | 2012-09-25 | 2016-08-23 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
| US10600673B2 (en) * | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
| CN107022754B (zh) * | 2016-02-02 | 2020-06-02 | 东京毅力科创株式会社 | 基板处理装置 |
| JP6559347B2 (ja) * | 2016-06-23 | 2019-08-14 | 株式会社アルバック | 保持装置 |
| CN106637141B (zh) * | 2017-01-20 | 2019-08-27 | 广东爱康太阳能科技有限公司 | 一种太阳能电池镀膜石墨舟片及石墨舟 |
| JP6763321B2 (ja) * | 2017-03-01 | 2020-09-30 | 東京エレクトロン株式会社 | 自転検出用冶具、基板処理装置及び基板処理装置の運転方法 |
| EP3413340B1 (en) | 2017-06-08 | 2021-11-17 | Brooks Automation (Germany) GmbH | Method for inspecting a container and inspection system |
| JP7448534B2 (ja) * | 2018-11-05 | 2024-03-12 | アプライド マテリアルズ インコーポレイテッド | 磁気ハウジングシステム |
| KR102721972B1 (ko) * | 2019-07-08 | 2024-10-29 | 삼성전자주식회사 | 회전체 모듈 및 이를 구비하는 화학 기계적 연마 장치 |
| KR20210113043A (ko) * | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| CN115679294A (zh) * | 2021-07-23 | 2023-02-03 | 北京北方华创微电子装备有限公司 | 半导体工艺腔室及半导体工艺设备 |
| KR102766145B1 (ko) * | 2021-12-16 | 2025-02-12 | 에이피시스템 주식회사 | 자기부상 회전 장치 및 자기부상 회전 방법 |
| KR102424176B1 (ko) * | 2021-12-17 | 2022-07-25 | 김상조 | 자기부상 회전 장치 및 이를 포함하는 진공 처리 장치 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3930157A1 (de) * | 1989-09-09 | 1991-03-21 | Bosch Gmbh Robert | Einrichtung zur verstellung der drehwinkelzuordnung einer nockenwelle zu ihrem antriebselement |
| JP2001524259A (ja) * | 1995-07-10 | 2001-11-27 | シーヴィシー、プラダクツ、インク | マイクロエレクトロニクス製造装置用プログラマブル超クリーン電磁サブストレート回転装置及び方法 |
| US5818137A (en) * | 1995-10-26 | 1998-10-06 | Satcon Technology, Inc. | Integrated magnetic levitation and rotation system |
| JP3035577B2 (ja) * | 1997-03-04 | 2000-04-24 | オムロン株式会社 | 距離センサ装置 |
| US6157106A (en) * | 1997-05-16 | 2000-12-05 | Applied Materials, Inc. | Magnetically-levitated rotor system for an RTP chamber |
| JP3923696B2 (ja) * | 1999-07-19 | 2007-06-06 | 株式会社荏原製作所 | 基板回転装置 |
| JP2001090967A (ja) * | 1999-09-27 | 2001-04-03 | Matsushita Electric Works Ltd | 床暖房パネル構造 |
| WO2001082348A1 (en) * | 2000-04-20 | 2001-11-01 | Tokyo Electron Limited | Thermal processing system |
| JP2001351874A (ja) * | 2000-06-09 | 2001-12-21 | Ebara Corp | 基板回転装置 |
| JP2002016125A (ja) * | 2000-06-29 | 2002-01-18 | Ebara Corp | 基板回転装置 |
| US6437290B1 (en) * | 2000-08-17 | 2002-08-20 | Tokyo Electron Limited | Heat treatment apparatus having a thin light-transmitting window |
| JP2002093724A (ja) * | 2000-09-18 | 2002-03-29 | Tokyo Electron Ltd | 熱処理装置 |
| EP1244152A3 (en) * | 2001-01-26 | 2008-12-03 | Toyoda Gosei Co., Ltd. | Reflective light emitting diode, reflective optical device and its manufacturing method |
| US6770146B2 (en) * | 2001-02-02 | 2004-08-03 | Mattson Technology, Inc. | Method and system for rotating a semiconductor wafer in processing chambers |
| JP4867074B2 (ja) * | 2001-03-15 | 2012-02-01 | 東京エレクトロン株式会社 | 枚葉式の処理装置 |
| JP2003322852A (ja) * | 2002-05-07 | 2003-11-14 | Nitto Denko Corp | 反射型液晶表示装置及び光学フィルム |
| JP4575202B2 (ja) * | 2005-03-24 | 2010-11-04 | 日本板硝子株式会社 | 透明板状体の欠点検査方法及び欠点検査装置 |
| JP4979472B2 (ja) * | 2007-06-05 | 2012-07-18 | 東京エレクトロン株式会社 | 処理装置 |
| US8974632B2 (en) * | 2011-11-30 | 2015-03-10 | Lam Research Ag | Device and method for treating wafer-shaped articles |
-
2010
- 2010-06-25 JP JP2010144572A patent/JP5533335B2/ja active Active
- 2010-07-21 WO PCT/JP2010/062243 patent/WO2011010661A1/ja not_active Ceased
- 2010-07-21 CN CN2010800331377A patent/CN102473670A/zh active Pending
- 2010-07-21 KR KR1020127001941A patent/KR20120030564A/ko not_active Abandoned
- 2010-07-21 TW TW099123959A patent/TW201120985A/zh unknown
- 2010-07-21 US US13/386,572 patent/US20120118504A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104425331A (zh) * | 2013-09-09 | 2015-03-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 转盘定位装置、装载传输系统及等离子体加工设备 |
| TWI588077B (zh) * | 2013-09-09 | 2017-06-21 | Beijing Nmc Co Ltd | Turntable positioning device, loading and conveying system and plasma processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102473670A (zh) | 2012-05-23 |
| US20120118504A1 (en) | 2012-05-17 |
| JP5533335B2 (ja) | 2014-06-25 |
| KR20120030564A (ko) | 2012-03-28 |
| JP2011139015A (ja) | 2011-07-14 |
| WO2011010661A1 (ja) | 2011-01-27 |
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