KR20120030564A - 처리 장치 및 그 동작 방법 - Google Patents

처리 장치 및 그 동작 방법 Download PDF

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Publication number
KR20120030564A
KR20120030564A KR1020127001941A KR20127001941A KR20120030564A KR 20120030564 A KR20120030564 A KR 20120030564A KR 1020127001941 A KR1020127001941 A KR 1020127001941A KR 20127001941 A KR20127001941 A KR 20127001941A KR 20120030564 A KR20120030564 A KR 20120030564A
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KR
South Korea
Prior art keywords
rotating
floating
floating body
electromagnet
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020127001941A
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English (en)
Korean (ko)
Inventor
마사미치 노무라
겐지로 고이즈미
시게루 가사이
스미 다나카
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20120030564A publication Critical patent/KR20120030564A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
KR1020127001941A 2009-07-22 2010-07-21 처리 장치 및 그 동작 방법 Abandoned KR20120030564A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2009-171558 2009-07-22
JP2009171558 2009-07-22
JPJP-P-2009-274987 2009-12-02
JP2009274987 2009-12-02
JP2010144572A JP5533335B2 (ja) 2009-07-22 2010-06-25 処理装置及びその動作方法
JPJP-P-2010-144572 2010-06-25

Publications (1)

Publication Number Publication Date
KR20120030564A true KR20120030564A (ko) 2012-03-28

Family

ID=43499133

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127001941A Abandoned KR20120030564A (ko) 2009-07-22 2010-07-21 처리 장치 및 그 동작 방법

Country Status (6)

Country Link
US (1) US20120118504A1 (cg-RX-API-DMAC7.html)
JP (1) JP5533335B2 (cg-RX-API-DMAC7.html)
KR (1) KR20120030564A (cg-RX-API-DMAC7.html)
CN (1) CN102473670A (cg-RX-API-DMAC7.html)
TW (1) TW201120985A (cg-RX-API-DMAC7.html)
WO (1) WO2011010661A1 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170006274A (ko) * 2015-07-07 2017-01-17 에이에스엠 아이피 홀딩 비.브이. 자성 서셉터 대 베이스플레이트 시일
KR102424176B1 (ko) * 2021-12-17 2022-07-25 김상조 자기부상 회전 장치 및 이를 포함하는 진공 처리 장치
WO2023113262A1 (ko) * 2021-12-16 2023-06-22 에이피시스템 주식회사 자기부상 회전 장치 및 자기부상 회전 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9548223B2 (en) * 2011-12-23 2017-01-17 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
JP5937850B2 (ja) * 2012-02-29 2016-06-22 株式会社ブリヂストン 研削方法
JP6010398B2 (ja) * 2012-08-31 2016-10-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5936505B2 (ja) * 2012-09-25 2016-06-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5973299B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
KR101512560B1 (ko) 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 기판처리장치
JP5973300B2 (ja) * 2012-09-25 2016-08-23 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN104425331B (zh) * 2013-09-09 2017-09-29 北京北方微电子基地设备工艺研究中心有限责任公司 转盘定位装置、装载传输系统及等离子体加工设备
CN107022754B (zh) * 2016-02-02 2020-06-02 东京毅力科创株式会社 基板处理装置
JP6559347B2 (ja) * 2016-06-23 2019-08-14 株式会社アルバック 保持装置
CN106637141B (zh) * 2017-01-20 2019-08-27 广东爱康太阳能科技有限公司 一种太阳能电池镀膜石墨舟片及石墨舟
JP6763321B2 (ja) * 2017-03-01 2020-09-30 東京エレクトロン株式会社 自転検出用冶具、基板処理装置及び基板処理装置の運転方法
EP3413340B1 (en) 2017-06-08 2021-11-17 Brooks Automation (Germany) GmbH Method for inspecting a container and inspection system
JP7448534B2 (ja) * 2018-11-05 2024-03-12 アプライド マテリアルズ インコーポレイテッド 磁気ハウジングシステム
KR102721972B1 (ko) * 2019-07-08 2024-10-29 삼성전자주식회사 회전체 모듈 및 이를 구비하는 화학 기계적 연마 장치
KR20210113043A (ko) * 2020-03-04 2021-09-15 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 정렬 고정구
CN115679294A (zh) * 2021-07-23 2023-02-03 北京北方华创微电子装备有限公司 半导体工艺腔室及半导体工艺设备

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DE3930157A1 (de) * 1989-09-09 1991-03-21 Bosch Gmbh Robert Einrichtung zur verstellung der drehwinkelzuordnung einer nockenwelle zu ihrem antriebselement
JP2001524259A (ja) * 1995-07-10 2001-11-27 シーヴィシー、プラダクツ、インク マイクロエレクトロニクス製造装置用プログラマブル超クリーン電磁サブストレート回転装置及び方法
US5818137A (en) * 1995-10-26 1998-10-06 Satcon Technology, Inc. Integrated magnetic levitation and rotation system
JP3035577B2 (ja) * 1997-03-04 2000-04-24 オムロン株式会社 距離センサ装置
US6157106A (en) * 1997-05-16 2000-12-05 Applied Materials, Inc. Magnetically-levitated rotor system for an RTP chamber
JP3923696B2 (ja) * 1999-07-19 2007-06-06 株式会社荏原製作所 基板回転装置
JP2001090967A (ja) * 1999-09-27 2001-04-03 Matsushita Electric Works Ltd 床暖房パネル構造
WO2001082348A1 (en) * 2000-04-20 2001-11-01 Tokyo Electron Limited Thermal processing system
JP2001351874A (ja) * 2000-06-09 2001-12-21 Ebara Corp 基板回転装置
JP2002016125A (ja) * 2000-06-29 2002-01-18 Ebara Corp 基板回転装置
US6437290B1 (en) * 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
JP2002093724A (ja) * 2000-09-18 2002-03-29 Tokyo Electron Ltd 熱処理装置
EP1244152A3 (en) * 2001-01-26 2008-12-03 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
US6770146B2 (en) * 2001-02-02 2004-08-03 Mattson Technology, Inc. Method and system for rotating a semiconductor wafer in processing chambers
JP4867074B2 (ja) * 2001-03-15 2012-02-01 東京エレクトロン株式会社 枚葉式の処理装置
JP2003322852A (ja) * 2002-05-07 2003-11-14 Nitto Denko Corp 反射型液晶表示装置及び光学フィルム
JP4575202B2 (ja) * 2005-03-24 2010-11-04 日本板硝子株式会社 透明板状体の欠点検査方法及び欠点検査装置
JP4979472B2 (ja) * 2007-06-05 2012-07-18 東京エレクトロン株式会社 処理装置
US8974632B2 (en) * 2011-11-30 2015-03-10 Lam Research Ag Device and method for treating wafer-shaped articles

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170006274A (ko) * 2015-07-07 2017-01-17 에이에스엠 아이피 홀딩 비.브이. 자성 서셉터 대 베이스플레이트 시일
WO2023113262A1 (ko) * 2021-12-16 2023-06-22 에이피시스템 주식회사 자기부상 회전 장치 및 자기부상 회전 방법
KR20230091507A (ko) * 2021-12-16 2023-06-23 에이피시스템 주식회사 자기부상 회전 장치 및 자기부상 회전 방법
KR102424176B1 (ko) * 2021-12-17 2022-07-25 김상조 자기부상 회전 장치 및 이를 포함하는 진공 처리 장치

Also Published As

Publication number Publication date
CN102473670A (zh) 2012-05-23
US20120118504A1 (en) 2012-05-17
TW201120985A (en) 2011-06-16
JP5533335B2 (ja) 2014-06-25
JP2011139015A (ja) 2011-07-14
WO2011010661A1 (ja) 2011-01-27

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