JP6685956B2 - 半導体製造装置 - Google Patents
半導体製造装置 Download PDFInfo
- Publication number
- JP6685956B2 JP6685956B2 JP2017044119A JP2017044119A JP6685956B2 JP 6685956 B2 JP6685956 B2 JP 6685956B2 JP 2017044119 A JP2017044119 A JP 2017044119A JP 2017044119 A JP2017044119 A JP 2017044119A JP 6685956 B2 JP6685956 B2 JP 6685956B2
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- JP
- Japan
- Prior art keywords
- magnet
- magnetic body
- semiconductor manufacturing
- substrate
- manufacturing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3452—Magnet distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
- B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
- B65G2249/00—Aspects relating to conveying systems for the manufacture of fragile sheets
- B65G2249/04—Arrangements of vacuum systems or suction cups
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
しかし、一般的なマグネトロンスパッタ装置では、一旦設定された磁場強度を途中で変更することは考慮されていない。そのため、磁石の取り換え等の大掛かりな作業が必要になり、その結果、装置の稼働率が低下する。
以下、図3(a)および図3(b)を参照して、上述した実施形態の変形例について説明する。図3(a)は、本変形例に係る支持部材32の要部を拡大した断面図である。図3(b)は、図3(a)に示す支持部材に磁性体50が装着された状態を示す。
Claims (4)
- 基板と、前記基板に対向するターゲットとを収容する真空槽と、
前記真空槽外において前記ターゲットの裏側に位置する第1面を有する回転部材と、
前記第1面に設けられた第1磁石と、
磁極が前記第1磁石と反対であり、前記第1面において前記第1磁石の内側に設けられた第2磁石と、
前記第1磁石と前記第2磁石との間に設けられ、鉛直方向に往復移動可能な磁性体と、
を備え、
前記磁性体は、円板状または円柱状の頭部を有し、
前記回転部材は、前記頭部を収容する凹部を有する、半導体製造装置。 - 前記磁性体は、前記第1磁石と前記第2磁石との中央に設けられている、請求項1に記載の半導体製造装置。
- 前記回転部材は、前記磁性体が係合されるねじ穴を有する、請求項1または2に記載の半導体製造装置。
- 前記第1磁石が第1半円形に配置され、前記第2磁石が前記第1半円形と相似な第2半円形に配置され、
前記磁性体が、前記第1半円形の直径部分と前記第2半円形の直径部分との間に配置されているとともに、前記第1半円形の円弧部分と前記第2半円形の円弧部分との間にも配置されている、請求項1から3のいずれかに記載の半導体製造装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017044119A JP6685956B2 (ja) | 2017-03-08 | 2017-03-08 | 半導体製造装置 |
US15/695,819 US10658162B2 (en) | 2017-03-08 | 2017-09-05 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017044119A JP6685956B2 (ja) | 2017-03-08 | 2017-03-08 | 半導体製造装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018145509A JP2018145509A (ja) | 2018-09-20 |
JP6685956B2 true JP6685956B2 (ja) | 2020-04-22 |
Family
ID=63445055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017044119A Active JP6685956B2 (ja) | 2017-03-08 | 2017-03-08 | 半導体製造装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10658162B2 (ja) |
JP (1) | JP6685956B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7057430B2 (ja) * | 2018-09-27 | 2022-04-19 | 株式会社アルバック | マグネトロンスパッタリング装置用の磁石ユニット |
CN109750267B (zh) * | 2019-03-26 | 2021-10-26 | 合肥京东方显示技术有限公司 | 一种磁控溅射装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5194131A (en) | 1991-08-16 | 1993-03-16 | Varian Associates, Inc. | Apparatus and method for multiple ring sputtering from a single target |
JP3919266B2 (ja) | 1996-09-27 | 2007-05-23 | キヤノンアネルバ株式会社 | スパッタリング装置のマグネトロンカソード電極 |
WO2001002618A1 (en) | 1999-07-02 | 2001-01-11 | Applied Materials, Inc. | Magnetron unit and sputtering device |
US8778144B2 (en) * | 2004-09-28 | 2014-07-15 | Oerlikon Advanced Technologies Ag | Method for manufacturing magnetron coated substrates and magnetron sputter source |
JP2006291262A (ja) | 2005-04-08 | 2006-10-26 | Alps Electric Co Ltd | 薄膜形成装置 |
US10043642B2 (en) * | 2008-02-01 | 2018-08-07 | Oerlikon Surface Solutions Ag, Pfäffikon | Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement |
WO2009139434A1 (ja) * | 2008-05-15 | 2009-11-19 | 国立大学法人山口大学 | 薄膜作製用スパッタ装置及び薄膜作製方法 |
JP2010037656A (ja) | 2008-08-01 | 2010-02-18 | Fuji Electric Holdings Co Ltd | スパッタリング装置 |
US10283331B2 (en) * | 2013-09-17 | 2019-05-07 | Applied Materials, Inc. | PVD plasma control using a magnet edge lift mechanism |
-
2017
- 2017-03-08 JP JP2017044119A patent/JP6685956B2/ja active Active
- 2017-09-05 US US15/695,819 patent/US10658162B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US10658162B2 (en) | 2020-05-19 |
US20180261437A1 (en) | 2018-09-13 |
JP2018145509A (ja) | 2018-09-20 |
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