TW201110221A - Wafer processing method - Google Patents
Wafer processing method Download PDFInfo
- Publication number
- TW201110221A TW201110221A TW099121028A TW99121028A TW201110221A TW 201110221 A TW201110221 A TW 201110221A TW 099121028 A TW099121028 A TW 099121028A TW 99121028 A TW99121028 A TW 99121028A TW 201110221 A TW201110221 A TW 201110221A
- Authority
- TW
- Taiwan
- Prior art keywords
- sapphire substrate
- scribe line
- along
- wafer
- layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009181505A JP2011035253A (ja) | 2009-08-04 | 2009-08-04 | ウエーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201110221A true TW201110221A (en) | 2011-03-16 |
Family
ID=43746078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW099121028A TW201110221A (en) | 2009-08-04 | 2010-06-28 | Wafer processing method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2011035253A (ko) |
KR (1) | KR20110014102A (ko) |
CN (1) | CN101989640A (ko) |
TW (1) | TW201110221A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103311115A (zh) * | 2012-03-16 | 2013-09-18 | 鑫晶钻科技股份有限公司 | 可辨识正反面的蓝宝石基板的制造方法 |
TWI618132B (zh) * | 2011-11-11 | 2018-03-11 | Disco Corp | Optical component wafer processing method |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5833362B2 (ja) * | 2011-07-05 | 2015-12-16 | 株式会社ディスコ | サファイア基板の加工方法 |
JP2014079791A (ja) * | 2012-10-17 | 2014-05-08 | Disco Abrasive Syst Ltd | レーザー加工方法 |
JP2017059685A (ja) * | 2015-09-16 | 2017-03-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP6504977B2 (ja) * | 2015-09-16 | 2019-04-24 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017059686A (ja) * | 2015-09-16 | 2017-03-23 | 株式会社ディスコ | ウエーハの加工方法 |
JP6521837B2 (ja) * | 2015-11-05 | 2019-05-29 | 株式会社ディスコ | ウエーハの加工方法 |
JP6576211B2 (ja) * | 2015-11-05 | 2019-09-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP6576212B2 (ja) * | 2015-11-05 | 2019-09-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP6721420B2 (ja) * | 2016-06-02 | 2020-07-15 | 株式会社ディスコ | 漏れ光検出方法 |
JP6745165B2 (ja) * | 2016-08-09 | 2020-08-26 | 株式会社ディスコ | ウェーハの加工方法 |
JP6821261B2 (ja) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | 被加工物の加工方法 |
JP6837905B2 (ja) * | 2017-04-25 | 2021-03-03 | 株式会社ディスコ | ウエーハの加工方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004014938A (ja) * | 2002-06-10 | 2004-01-15 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4767711B2 (ja) * | 2006-02-16 | 2011-09-07 | 株式会社ディスコ | ウエーハの分割方法 |
JP2008028347A (ja) * | 2006-07-25 | 2008-02-07 | Disco Abrasive Syst Ltd | 脆化域形成方法 |
JP5225639B2 (ja) * | 2007-09-06 | 2013-07-03 | 浜松ホトニクス株式会社 | 半導体レーザ素子の製造方法 |
JP5307384B2 (ja) * | 2007-12-03 | 2013-10-02 | 株式会社ディスコ | ウエーハの分割方法 |
-
2009
- 2009-08-04 JP JP2009181505A patent/JP2011035253A/ja active Pending
-
2010
- 2010-06-28 TW TW099121028A patent/TW201110221A/zh unknown
- 2010-07-29 KR KR1020100073385A patent/KR20110014102A/ko not_active Application Discontinuation
- 2010-08-04 CN CN2010102463550A patent/CN101989640A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618132B (zh) * | 2011-11-11 | 2018-03-11 | Disco Corp | Optical component wafer processing method |
CN103311115A (zh) * | 2012-03-16 | 2013-09-18 | 鑫晶钻科技股份有限公司 | 可辨识正反面的蓝宝石基板的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20110014102A (ko) | 2011-02-10 |
CN101989640A (zh) | 2011-03-23 |
JP2011035253A (ja) | 2011-02-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201110221A (en) | Wafer processing method | |
TWI489587B (zh) | Wafer processing method | |
TWI579088B (zh) | Laser processing method | |
KR101999411B1 (ko) | 웨이퍼 가공 방법 | |
TWI582875B (zh) | A laser processing device with a plasma detection mechanism | |
TWI620611B (zh) | Laser processing method | |
JP4767711B2 (ja) | ウエーハの分割方法 | |
TWI410292B (zh) | Laser processing device | |
KR102313271B1 (ko) | 웨이퍼의 가공 방법 | |
TWI566285B (zh) | Wafer processing method and laser processing device | |
JP2012129457A (ja) | 光デバイスウエーハの加工方法 | |
TWI571922B (zh) | Processing of wafers (5) | |
JP2005332841A (ja) | ウエーハの分割方法 | |
JP4447392B2 (ja) | ウエーハの分割方法および分割装置 | |
JP4648044B2 (ja) | レーザー加工装置 | |
JP2012049164A (ja) | 発光デバイスの製造方法 | |
JP2008131008A (ja) | ウエーハのレーザー加工方法およびレーザー加工装置 | |
JP7382762B2 (ja) | レーザー加工装置の加工結果の良否判定方法 | |
TW201351483A (zh) | 改質層形成方法 | |
JP2010145230A (ja) | チャックテーブルに保持された被加工物の高さ位置計測装置 | |
JP5878292B2 (ja) | 光デバイスウエーハの加工方法 | |
TWI538040B (zh) | Processing method of optical element wafers | |
JP2013058534A (ja) | 板状物の加工方法 | |
JP2009277778A (ja) | ウエーハの分割方法 | |
TWI474388B (zh) | A laser processing method, a laser processing apparatus, and a manufacturing method of a wafer |