TWI571922B - Processing of wafers (5) - Google Patents

Processing of wafers (5) Download PDF

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Publication number
TWI571922B
TWI571922B TW103104582A TW103104582A TWI571922B TW I571922 B TWI571922 B TW I571922B TW 103104582 A TW103104582 A TW 103104582A TW 103104582 A TW103104582 A TW 103104582A TW I571922 B TWI571922 B TW I571922B
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Taiwan
Prior art keywords
modified layer
wafer
layer forming
program
semiconductor wafer
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TW103104582A
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English (en)
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TW201442089A (zh
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Masaru Nakamura
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Disco Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/03—Observing, e.g. monitoring, the workpiece
    • B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • High Energy & Nuclear Physics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
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  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)

Description

晶圓之加工方法(五) 發明領域
本發明是關於一種晶圓之加工方法，是將晶圓沿著分割預定線分割為各個元件，且該晶圓在表面有複數個分割預定線形成為格子狀並且於由複數個分割預定線區劃之複數個區域形成有元件。
發明背景
本導體元件製造程序中，在為大致圓板形狀之半導體晶圓之表面藉由排列為格子狀之分割預定線區劃複數個區域，並於該經區劃的區域形成IC、LSI等元件。並且，將半導體晶圓沿著分割預定線切斷藉此分割形成有元件之區域而製造各個半導體元件。
又，剛元件製造的製程中，於藍寶石基板或碳化矽基板積層由n型氮化物半導體層及p型氮化物半導體層所形成之光元件層，並於形成為格子狀之以複數個分割預定線區劃之複數個區域形成發光二極體、雷射二極體等光元件而構成光元件晶圓。並且，將光元件晶圓沿著分割預定線切斷藉此分割形成有光元件之區域而製造各個光元件。
作為分割前述半導體晶圓或光元件晶圓等晶圓 的方法，具體實現的有使用對晶圓具有穿透性之波長的脈衝雷射光線，於要分割的區域之內部定位集光點並照射脈衝雷射光線的雷射加工方法。使用了該雷射加工方法的分割方法，是由晶圓之其中一面側於內部定位集光點並對晶圓照射有穿透性之波長的脈衝雷射光線，於被加工物的內部沿著分割預定線連續形成改質層，沿著由於形成該改質層而強度降低之分割預定線施加外力，藉此分割晶圓的技術(例如參考專利文獻1)。
下述專利文獻1所記載之技術，由於必須要將雷 射光線之集光點定位於晶圓之內部，因此要於形成有元件之表面黏著保護膠帶，將保護膠帶側保持於雷射光線之夾頭台而由晶圓之背面側照射雷射光線。
又，複數積層而形成改質層的情況中，將雷射光線之集光點再一開始定位於表面附近並進行照射，之後，一面依序朝背面側移動集光點一面積層改質層(例如參考專利文獻2)。
如此，一面由晶圓之表面側依序朝背面側移動集光點一面積層而形成改質層，是因為考慮到若在一開始當於背面附近形成改質層就將雷射光線之集光點接近表面側時，已經形成之改質層會妨礙雷射光線之照射。
【先行技術文獻】
【專利文獻】
【專利文獻1】特許第3408805號公報
【專利文獻2】特開2009-140947號公報
發明概要
然而，由於於晶圓之內部形成改質層則會在入射了雷射光線之背面側產生裂痕，因此將雷射光線之集光點在一開始定位於表面附近進行照射，之後一面將集光點依序朝背面側移動一面形成改質層，則裂痕會朝背面側同方向成長在背面附近之切斷面造成凹凸，使得元件之抗撓強度降低，並且會有粉塵飛散污染焊盤而降低元件之品質的問題。
本發明是有鑑於前述事實，提供一種晶圓之加工方法，其主要之技術課題是將晶圓分割為各個元件而不會於產生晶圓之背面附近之切斷面產生凹凸。
為了解決前述主要之技術之課題，根據本發明，提供一種晶圓之加工方法，是將晶圓沿著分割預定線分割為各個元件，且該晶圓在表面有複數個分割預定線形成為格子狀並且於由複數個分割預定線區劃之複數個區域形成有元件，該晶圓之加工方法之特徵在於包含有以下程序：改質層形成程序，將對晶圓具有穿透性之波長的雷射光線由晶圓之背面側沿著分割預定線照射，於晶圓之內部沿著分割預定線形成改質層；及分割程序，藉由對已實施了改質層形成程序之晶圓賦 予外力，沿著形成有改質層之分割預定線將晶圓分割為各個元件，且該改質層形成程序包含有：第1改質層形成程序，將雷射光線之集光點定位在晶圓之背面附近進行照射，藉此於晶圓之背面附近形成第1改質層；及第2改質層形成程序，於已實施了該第1改質層形成程序之晶圓中遠離該第1改質層之表面側定位雷射光線之集光點並進行照射，之後，依序使集光點移動至到達該第1改質層之區域一面積層並形成複數個第2改質層。
於該第2改質層形成程序實施後，實施第3改質層形成程序尤佳，該第3改質層是將雷射光線之集光點定位於較該第2改質層靠近晶圓之表面側並進行照射，藉此於晶圓之表面附近形成第3改質層。
本發明之晶圓之分割方法由於包含有第1改質層形成程序及第2改質層形成程序，且前述第1改質層形成程序是於晶圓之背面附近形成第1改質層，前述第2改質層形成程序，是於已實施了該第1改質層形成程序之晶圓中遠離該第1改質層之表面側定位雷射光線之集光點並進行照射，之後，依序使集光點移動至到達該第1改質層之區域一面積層並形成複數個第2改質層。因此，實施第2改質層形成程序時，從由晶圓中遠離第1改質層之表面側依序朝第1改質層形成之第2改質層所產生之裂痕會在一開始被導向形成 於背面附近之第1改質層而成為異向性被吸收。因此，晶圓在沿著形成有第1改質層及第2改質層的分割預定線切斷的狀態下，可抑制於背面附近之切斷面造成凹凸，因此可解除元件之抗撓強度降低，並且會有粉塵飛散污染焊盤而降低元件之品質的問題。
2‧‧‧半導體晶圓
2a‧‧‧半導體晶圓之表面
2b‧‧‧半導體晶圓之背面
3‧‧‧保護膠帶
4‧‧‧雷射加工裝置
5‧‧‧分割裝置
21‧‧‧分割預定線
22‧‧‧元件
41‧‧‧雷射加工裝置的夾頭台
42‧‧‧雷射光線照射手段
43‧‧‧拍攝手段
51‧‧‧框保持手段
52‧‧‧膠帶擴張手段
53‧‧‧拾取器
210‧‧‧第1改質層
421‧‧‧殼體
422‧‧‧集光器
511a‧‧‧載置面
512‧‧‧夾鉗
521‧‧‧擴張鼓輪
522‧‧‧支持凸緣
523‧‧‧之持手段
523a‧‧‧汽缸
523b‧‧‧活塞桿
X、Y、X1‧‧‧箭頭
F‧‧‧環狀框
P‧‧‧集光點
S‧‧‧間隙
T‧‧‧切割膠帶
圖1是藉由本發明中晶圓之加工方法加工的半導體晶圓之透視圖。
圖2是顯示圖1所示之於半導體晶圓之表面黏著有保護膠帶的狀態。
圖3是用以實施改質層形成程序的雷射加工裝置的主要部分透視圖。
圖4(a)~(c)是第1改質層形成程序的說明圖。
圖5(a)~(c)是第2改質層形成程序的說明圖。
圖6是實施了第2改質層形成程序的半導體晶圓的剖面圖。
圖7(a)~(c)是第3改質層形成程序。
圖8是晶圓支持程序之說明圖。
圖9是用以實施分割程序之分割裝置的透視圖。
圖10(a)~(c)是分割程序的說明圖。
較佳實施例之詳細說明
以下，就本發明中晶圓之加工方法之較佳實施形態，參考附加圖式詳細說明。
圖1是顯示依循本發明所加工之做為晶圓之半導 體晶圓的透視圖。圖1所示之半導體晶圓2是由直徑200mm厚度例如為600μm的矽晶圓所形成，於表面2a將複數條分割預定線21形成為格子狀，並且於藉由該複數條分割預定線21所區劃之複數個區域形成IC、LSI等元件22。以下，就於該半導體晶圓2之背面2b安裝後述之晶片，並且沿著切割線21分割成各個元件22的晶圓加工方法加以說明。
前述半導體晶圓2之表面2a黏著有用以保護元件 22之如圖2所示之保護膠帶3(保護膠帶黏著程序)。
若已實施了前述保護膠帶黏著程序，則實施改質層形成程序，該改質層形成程序是由半導體晶圓2之背面側沿著分割預定線21照射對半導體晶圓2具有穿透性波長之雷射光線，並於晶圓之內部沿著分割預定線21形成改質層。該改質層形成程序是使用圖3所示之雷射加工裝置4來實施。圖3所示之雷射加工裝置4具有保持被加工物夾頭台41、對保持於該夾頭台41上之被加工物照射雷射光線的雷射光線照射手段42、及拍攝保持於夾頭台41上之被加工物的拍攝手段43。夾頭台41構成為可吸引保持被加工物，且形成為藉由未圖示之移動機構朝圖3中以箭頭X所示之加工進送方向或以箭頭Y所示之分度進送方向移動。
前述雷射光線照射手段42包含實質上水平配置之圓筒形狀之殼體421。殼體421內配設有包含有由未圖示之YAG雷射振盪器或YVO4雷射振盪器所構成之脈衝雷射光線振盪器或反覆頻率設定手段的雷射光線振盪手段。前 述殼體421之前端部安裝有用以將由脈衝雷射光線振盪手段振盪之脈衝雷射光線加以集光之集光器422。
安裝於殼體421之前端部的拍攝手段43，於本實 施形態中除了藉由可見光進行拍攝之一般拍攝零件(CCD)之外，是以對被加工物照射紅外線的紅外線照明手段、捕捉以該紅外線照明手段照射之紅外線的光學系統、以及輸出對應於該光學系統捕捉之紅外線的電訊號的拍攝零件(紅外線CCD)等構成，並且可將所拍攝之圖像訊號送至未圖示之控制手段。
針對使用前述雷射加工裝置4實施之改質層形成 程序，參考圖4~7進行說明。
該改質層形成程序中，首先實施第1改質層形成程序，該第1改質層形成程序是將雷射光線之集光點定位於半導體晶圓2之背面附近而照射，藉此於半導體晶圓2之背面附近形成第1改質層。實施該第1改質層形成程序，是於前述圖3所示之雷射加工裝置4之夾頭台41上載置黏貼於半導體晶圓2之表面2a之保護膠帶3。並且，藉由作動未圖示之吸引手段將半導體晶圓2吸引保持於夾頭台41上(晶圓保持程序)。因此，透過保護膠帶3保持於夾頭台41上之半導體晶圓2，其背面2b會成為上側。如此，將吸引保持了半導體晶圓2之夾頭台41藉由未圖示之加工進送手段定位於拍攝手段43之正下方。
當夾頭台41被定位於拍攝手段43之正下方時，則 實施藉由拍攝手段43及未圖示之控制手段檢測半導體晶圓 2之應雷射加工之加工區域的校準程序。亦即，拍攝手段43及未圖示之控制手段會實施用以進行形成於半導體晶圓2之朝第1方向形成之分割預定線21對應之區域、與沿著分割預定線21照射雷射光線之雷射光線照射手段42之集光器422之對位的圖案配對等圖像處理，而執行雷射光線照射位置之校準。又，對於與形成於半導體晶圓2之延伸於對前述第1方向正交之方向之分割預定線21，也同樣執行雷射光線照射位置之校準。此時，半導體晶圓2之形成有分割預定線21之表面2a會位於下側，但由於拍攝手段43是如前所述具有以紅外線照明手段、可捕捉紅外線之光學系統、及可輸出對應於紅外線之電訊號之拍攝零件(紅外線CCD)等所構成的拍攝手段，因此可由背面2b穿透拍攝分割預定線21。
若已如同上述檢測出形成在保持於夾頭台41上之半導體晶圓2的分割預定線21，而進行了雷射光線照射位置之校準，則如圖4(a)所示將夾頭台41移動至照射雷射光線之雷射光線照射手段42之集光器422所位在之雷射光線照射區域，並將預定之分割預定線21之一端(圖4(a)中為左端)定位於雷射光線照射手段42之集光器422之正下方。接著，將由集光器422所照射之脈衝雷射光線之集光點P定位於半導體晶圓2之背面2b(為上面之照射面)附近(例如，由背面2b算來30μm表面2a側的位置)。並且，一面由集光器422照射對矽晶圓有穿透性波長之脈衝雷射光線，一面將夾頭台41朝如圖4(a)中箭頭X1所示之方向以預定之進送速度移動。並且，若如圖4(b)所示雷射光線照射手段42之集光器422之 照射位置到達了分割預定線21之另一端之位置，則一面停止照射脈衝雷射光線一面停止夾頭台41之移動。結果如圖4(c)所示於半導體晶圓2之背面2b之附近以由背面2b算起30μm表面2a側之位置為中心沿著分割預定線21形成有第1改質層210(第1改質層形成程序)。
前述第1改質層形成程序之加工條件，可例如以下設定。
光源：LD激發Q開關Nd：YVO4脈衝雷射
波長：1064nm
反複頻率：1MHz
平均輸出：0.7W
集光點徑：φ 1μm
加工進送速度：700mm/秒
若已如前所述沿著預定之分割預定線21實施了前述第1改質層形成程序，則將夾頭台41朝以箭頭Y所示之方向分度移動剛好形成於半導體晶圓2之分割預定線21之間隔(分度程序)，並執行前述第1改質層形成程序。如此若已沿著形成於第1方向之所有分割預定線21實施了前述第1改質層形成程序，則使夾頭台41進行90度轉動，沿著延伸於對形成於前述第1方向之分割預定線21正交之方向的分割預定線21執行前述第1改質層形成程序。
若已執行了前述之第1改質層形成程序，則實施第2改質層形成程序，該第2改質層形成程序是於由半導體晶圓2中之第1改質層210遠離之表面2a側定位雷射光線之 集光點並進行照射，之後，一面將集光點依序朝到達第1改質層210之區域移動一面積層而形成複數層第2改質層。
第2改質層形成程序，是如圖5(a)所示將夾頭台41移動至照射雷射光線之雷射光線照射手段42之集光器422所位在之雷射光線照射區域，並將預定之分割預定線21之其中一端(圖5(a)中之左端)定位於雷射光線照射手段42之集光器422之正下方。接著，將由集光器422所照射之脈衝雷射光線之集光點P定位於半導體晶圓2中遠離第1改質層210的表面2a側。此時，本實施形態中是將脈衝雷射光線之集光點P定位於由表面2a算起例如60μm之背面2b側之位置。並且一面由集光器422照射對矽晶圓具有穿透性之波長的脈衝雷射光線，一面使夾頭台41朝圖5(a)中以箭頭X1所示之方向已預定之進送速度移動。並且，如圖5(b)所示當雷射光線照射手段42之集光器422之照射位置到達分割預定線21之另一端之位置時，則停止脈衝雷射光線之照射並且停止夾頭台41之移動。結果，如圖5(c)所示沿著分割預定線21已由半導體晶圓2之表面2a算起例如60μm之背面2b側之位置為中心形成第2改質層220(第2改質層形成程序)。
前述第2改質層形成程序之加工條件是例如以下設定。
光源：LD激發Q開關Nd：YVO4脈衝雷射
波長：1064nm
反覆頻率：1MHz
平均輸出：0.5W
集光點徑：φ 1μm
加工進送速度：700mm/秒
若已如前所述沿著預定的分割預定線21實施了第2改質層形成程序，則將夾頭台41朝以箭頭Y所示之方向分度移動剛好形成於半導體晶圓2之分割預定線21之間隔(分度程序)，執行前述第2改質層形成程序。若已如此沿著形成於第1方向之所有分割預定線21實施了前述第2改質層形成程序，則使夾頭台41旋轉90度，並沿著朝對形成於前述第1方向的分割預定線21正交之方向延伸的分割預定線21執行第2改質層形成程序。
若已如前所述於半導體晶圓2中遠離第1改質層210之表面2a側形成了第2改質層220，則依序將脈衝雷射光線之集光點P朝至第1改質層210之區域一面以例如40μm之間隔移動一面實施前述第2改質層形成程序。結果，於半導體晶圓2如圖6所示於至第1改質層210之區域積層且形成複數之第2改質層220。然而，第2改質層形成程序中，會變成通過第1改質層210照射脈衝雷射光線，但根據本發明者的實驗已判斷可確實形成第2改質層220。當如此實施第2改質層形成程序時，則由較半導體晶圓2之第1改質層210表面側2a開始依序形成之第2改質層220所產生之裂痕會被一開始形成於背面2b附近之第1改質層210引導成為異向性而被吸收。因此，半導體晶圓2在沿著形成有第1改質層210及第2改質層220的分割預定線21切斷的狀態下，可抑制於背面2b附近之切斷面造成凹凸，因此可解除元件之抗撓強度降 低，並且會有粉塵飛散污染焊盤而降低元件之品質的問題。
若已實施了前述之第2改質層形成程序，雖然非 必要但可實施第3改質層形成程序，該第3改質層形成程序是在較第2改質層220靠近半導體晶圓2之表面2a側定位脈衝雷射光線之集光點並照射，藉此於半導體晶圓2之表面2a之附近形成第3改質層。
第3改質層形成程序是如圖7(a)所示將夾頭台41移動至照射雷射光線之雷射光線照射手段42之集光器422所位在之雷射光線照射區域，並將預定之分割預定線21之其中一端(圖7(a)中之左端)定位於雷射光線照射手段42之集光器422之正下方。接著，將由集光器422所照射之脈衝雷射光線之集光點P定位於較半導體晶圓2之第2改質層220較靠近表面2a側。此時，本實施形態中是將脈衝雷射光線之集光點P定位於由半導體晶圓2之表面2a算起例如20μm背面側2b之位置。並且一面由集光器422照射對矽晶圓具有穿透性波長的脈衝雷射光線，一面將夾頭台41朝於圖7(a)中箭頭X1所示之方向已預定之進送速度移動。並且，如圖7(b)所示若雷射光線照射手段42之集光器422之照射位置到達了分割預定線21之另一端之位置，則停止脈衝雷射光線之照射並且停止夾頭台41之移動。結果，如圖7(c)所示沿著分割預定線21以由半導體晶圓2之表面2a算起例如20μm之背面2b側之位置為中心形成第3改質層230(第3改質層形成程序)。
然而，前述第3改質層形成程序之加工條件，於圖示之實施形態中設定為與第2改質層形成程序之加工條件相同。
若如前所述沿著預定之分割預定線21實施了第3 改質層形成程序，則將夾頭台41朝以箭頭Y所示之方向分度移動剛好形成於半導體晶圓2之分割預定線21之間隔(分度程序)，執行前述第3改質層形成程序。若已如此沿著形成於第1方向之所有分割預定線21實施了前述第3改質層形成程序，則使夾頭台41旋轉90度，並沿著朝對形成於前述第1方向的分割預定線21正交之方向延伸的分割預定線21執行第3改質層形成程序。
如此於半導體晶圓2之表面2a附近形成第3改質層230，藉此可順利進行後述之分割程序中之晶圓分割。
若實施了由前述之第1改質層形成程序、第2改質層形成程序集第3改質層形成程序構成之改質層形成程序，則實施晶圓支持程序，該晶圓支持程序是將實施了改質層形成程序的半導體晶圓2之背面2b黏著於安裝在環狀框之黏著膠帶之表面，並且剝離黏著於半導體晶圓2之表面2a的保護膠帶3。例如，如圖8所示，將半導體晶圓2之背面2b側黏著在安裝於環狀框F之為黏著膠帶的切割膠帶T。因此，黏著於半導體晶圓2之表面2a的保護膠帶3會成為上側。之後剝離黏著於半導體晶圓2之表面2a之作為保護構件之保護膠帶3。
接著，實施分割程序，該分割程序是藉由於半導 體晶圓2賦予外力，將半導體晶圓2沿著形成有第1改質層210、第2改質層220及第3改質層230的分割預定線21分割成各個元件。該分割程序是使用圖9所示之分割裝置5來實施。 圖9所示之分割裝置5具有保持前述環狀框F的框保持手段51、用以擴張安裝於保持在該框保持手段51的環狀框F的切割膠帶T的膠帶擴張手段52、及拾取夾頭53。框保持手段51是由環狀框保持構件511、配設於該框保持構件511之外周之作為固定手段的複數個夾鉗512所形成。框保持構件511之上面形成載置環狀框F的載置面511a，且於該載置面511a上載置環狀框F。並且，載置於載置面511a上之環狀框F是藉由夾鉗512固定於框保持構件511。如此構成之框保持手段51可藉由膠帶擴張手段52支持成可朝上下方向進退。
膠帶擴張手段52具有配設於前述環狀框保持構 件511之內側之擴張鼓輪521。該擴張鼓輪521具有較環狀框F之內徑小且較黏著於安裝在環狀框F之切割膠帶T的半導體晶圓2之外徑大的內徑及外徑。又，擴張鼓輪521於下端具有支持凸緣522。圖示之實施形態中膠帶擴張手段52具有可將前述環狀框保持構件511支撐為可朝上下方向進退之支持手段523。該支持手段523是由配設於前述支持凸緣522上之複數個汽缸523a所形成，該活塞桿523b連結於前述環狀框保持構件511之下面。如此使由複數個汽缸523a形成之支撐手段523，如圖10(a)所示使環狀框保持構件511朝上下方向移動於使載置面511a與擴張鼓輪521之上端大致相同高度之基準位置、及如圖10(b)所示較擴張鼓輪521之上端為 預定量下方之擴張位置之間。
就使用如同以上所構成之分割裝置5實施之分割 程序參考圖10加以說明。亦即，將半導體晶圓2所黏著之切割膠帶T所安裝之環狀框F，如圖10(a)所示載置於構成框保持手段51之框保持構件511之載置面511a上，並藉由夾鉗512固定於框保持構件511(框保持程序)。此時，框保持構件511定位於圖10(a)所示之基準位置。接著，作動構成膠帶擴張手段52之作為支持手段523的複數個汽缸523a，使環狀框保持構件511下降至圖10(b)所示之擴張位置。因此，由於固定於框保持構件511之載置面511a上之環狀框F也會下降，因此如圖10(b)所示，安裝於環狀框F的切割膠帶T會切於擴張鼓輪521之上端緣且擴張(膠帶擴張程序)。結果，由於對黏著於切割膠帶T之半導體晶圓2放射狀地作用拉張力，因此沿著形成有第1改質層210、第2改質層220及第3改質層230而強度降低的分割預定線21分離為各個元件，且於元件22間形成間隔S。
接著，如圖10(c)所示作動拾取器53吸附元件22， 將其由切割膠帶T剝離並拾取，搬送至未圖示之托盤或者晶片結合程序。而，於拾取程序中，由於如前所述使安裝有黏著於切割膠帶T的各個元件22間之間隙S變寬，因此不會與相鄰之元件22接觸而可輕易拾取。
2‧‧‧半導體晶圓
210‧‧‧第1改質層
2a‧‧‧半導體晶圓之表面
220‧‧‧第2改質層
2b‧‧‧半導體晶圓之背面
X1‧‧‧箭頭
3‧‧‧保護膠帶
P‧‧‧集光點
4‧‧‧雷射加工裝置
21‧‧‧分割預定線
41‧‧‧雷射加工裝置的夾頭台
422‧‧‧集光器

Claims (2)

  1. 一種晶圓之加工方法，是將晶圓沿著分割預定線分割為各個元件，且該晶圓在表面有複數個分割預定線形成為格子狀並且於由複數個分割預定線區劃之複數個區域形成有元件，該晶圓之加工方法之特徵在於包含有以下程序：改質層形成程序，將對晶圓具有穿透性之波長的雷射光線由晶圓之背面側沿著分割預定線照射，於晶圓之內部沿著分割預定線形成改質層；及分割程序，藉由對已實施了改質層形成程序之晶圓賦予外力，沿著形成有改質層之分割預定線將晶圓分割為各個元件，且該改質層形成程序包含有：第1改質層形成程序，將雷射光線之集光點定位在晶圓之背面附近進行照射，藉此於晶圓之背面附近形成第1改質層；及第2改質層形成程序，於已實施了該第1改質層形成程序之晶圓中遠離該第1改質層之表面側定位雷射光線之集光點並進行照射，之後，一面依序使集光點移動至到達該第1改質層之區域一面積層並形成複數個第2改質層。
  2. 如請求項1所記載之晶圓之加工方法，其中於該第2改質層形成程序實施後，實施第3改質層形成程序，該第3改質層是將雷射光線之集光點定位於較該第2改質層靠近晶圓之表面側並進行照射，藉此於晶圓之表面附近形成第3改質 層。
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