JP6721420B2 - 漏れ光検出方法 - Google Patents
漏れ光検出方法 Download PDFInfo
- Publication number
- JP6721420B2 JP6721420B2 JP2016110703A JP2016110703A JP6721420B2 JP 6721420 B2 JP6721420 B2 JP 6721420B2 JP 2016110703 A JP2016110703 A JP 2016110703A JP 2016110703 A JP2016110703 A JP 2016110703A JP 6721420 B2 JP6721420 B2 JP 6721420B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- adhesive tape
- laser beam
- modified layer
- light detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims description 48
- 239000002390 adhesive tape Substances 0.000 claims description 36
- 230000001678 irradiating effect Effects 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 16
- 239000003550 marker Substances 0.000 claims description 14
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 6
- 238000002788 crimping Methods 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 238000010422 painting Methods 0.000 claims description 4
- 238000007591 painting process Methods 0.000 claims 2
- 239000003921 oil Substances 0.000 description 11
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
- B23K26/705—Beam measuring device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/63—Connectors not provided for in any of the groups H01L24/10 - H01L24/50 and subgroups; Manufacturing methods related thereto
- H01L24/64—Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Description
レーザーの波長 :1342nm
繰り返し周波数 :90kHz
平均出力 :1.9W
スポット径 :φ1μm
送り速度 :700mm/秒
ウエーハの厚み :775μm
集光点の位置 :ウエーハの上面から700μm(下面から75μm)
10a:上面
10b:下面
10c:塗装面
20:粘着テープ
30:レーザー加工装置
32:紫外線照射手段
101、102:漏れ光痕
Claims (4)
- ウエーハの上面からウエーハに対して透過性を有する波長のレーザー光線の集光点を内部に位置付けて照射して改質層を形成する際にウエーハの下面に達するレーザー光線の漏れ光を検出する漏れ光検出方法であって、
ウエーハの下面を油性マーカーで塗装する塗装工程と、
ウエーハの下面に粘着テープを圧着する圧着工程と、
ウエーハの上面からウエーハに対して透過性を有する波長のレーザー光線の集光点を内部に位置付けて照射して改質層を形成する改質層形成工程と、
圧着した粘着テープを剥離する剥離工程と、
該剥離工程によって、下面に塗布された塗装が除去された領域を漏れ光があった領域として検出する漏れ光検出工程と、
から少なくとも構成される漏れ光検出方法。 - ウエーハの上面からウエーハに対して透過性を有する波長のレーザー光線の集光点を内部に位置付けて照射して改質層を形成する際にウエーハの下面に達するレーザー光線の漏れ光を検出する漏れ光検出方法であって、
ウエーハの下面を油性マーカーで塗装する塗装工程と、
ウエーハの上面からウエーハに対して透過性を有する波長のレーザー光線の集光点を内部に位置付けて照射して改質層を形成する改質層形成工程と、
ウエーハの下面に粘着テープを圧着する圧着工程と、
圧着した粘着テープを剥離する剥離工程と、
該剥離工程によって、下面に塗布された塗装が除去された領域を漏れ光があった領域として検出する漏れ光検出工程と、
から少なくとも構成される漏れ光検出方法。 - 該塗装工程で使用する油性マーカーは黒色である請求項1、又は2に記載の漏れ光検出方法。
- 該圧着工程において、紫外線の照射によって粘着層が硬化する粘着テープを使用し、該剥離工程において、粘着テープに紫外線を照射して粘着層を硬化させた後、該粘着テープを剥離する請求項1ないし3のいずれかに記載された漏れ光検出方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016110703A JP6721420B2 (ja) | 2016-06-02 | 2016-06-02 | 漏れ光検出方法 |
TW106114484A TWI713734B (zh) | 2016-06-02 | 2017-05-02 | 漏光檢測方法 |
SG10201704121WA SG10201704121WA (en) | 2016-06-02 | 2017-05-19 | Leakage laser beam detecting method |
CN201710373006.7A CN107457494B (zh) | 2016-06-02 | 2017-05-24 | 漏光检测方法 |
KR1020170067814A KR102264764B1 (ko) | 2016-06-02 | 2017-05-31 | 누설광 검출 방법 |
US15/611,380 US9929105B2 (en) | 2016-06-02 | 2017-06-01 | Leakage laser beam detecting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016110703A JP6721420B2 (ja) | 2016-06-02 | 2016-06-02 | 漏れ光検出方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017216413A JP2017216413A (ja) | 2017-12-07 |
JP6721420B2 true JP6721420B2 (ja) | 2020-07-15 |
Family
ID=60483478
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016110703A Active JP6721420B2 (ja) | 2016-06-02 | 2016-06-02 | 漏れ光検出方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9929105B2 (ja) |
JP (1) | JP6721420B2 (ja) |
KR (1) | KR102264764B1 (ja) |
CN (1) | CN107457494B (ja) |
SG (1) | SG10201704121WA (ja) |
TW (1) | TWI713734B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6478821B2 (ja) * | 2015-06-05 | 2019-03-06 | 株式会社ディスコ | ウエーハの生成方法 |
EP3633718A1 (en) * | 2018-10-01 | 2020-04-08 | Infineon Technologies AG | Detection of adhesive residue on a wafer |
JP7289592B2 (ja) | 2019-03-26 | 2023-06-12 | 株式会社ディスコ | 検査用基板及び検査方法 |
KR102581541B1 (ko) * | 2019-07-22 | 2023-09-21 | 삼성전자주식회사 | 웨이퍼 측정 장치 |
KR20210024319A (ko) | 2019-08-21 | 2021-03-05 | 삼성전자주식회사 | 웨이퍼 검사장치 |
JP7370902B2 (ja) | 2020-02-28 | 2023-10-30 | 株式会社ディスコ | クラック検出方法 |
JP7465425B2 (ja) | 2020-07-14 | 2024-04-11 | 株式会社東京精密 | 検査用ウェーハの検査方法及び検査装置並びに検査用ウェーハ |
CN115223851B (zh) * | 2022-09-21 | 2022-12-09 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | 一种机械式晶片分离方法及装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6428836A (en) * | 1987-07-23 | 1989-01-31 | Nec Corp | Selection of semiconductor chip |
JPH05160229A (ja) * | 1991-12-10 | 1993-06-25 | Hitachi Ltd | ボンディングパッド検査装置 |
JPH0967539A (ja) * | 1995-08-30 | 1997-03-11 | Pentel Kk | 油性インキ組成物 |
JP3408805B2 (ja) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | 切断起点領域形成方法及び加工対象物切断方法 |
CN1291252C (zh) * | 2002-01-23 | 2006-12-20 | 日东电工株式会社 | 光学膜、其制造方法、和使用该光学膜的相位差膜以及偏振片 |
KR20070086692A (ko) * | 2002-04-11 | 2007-08-27 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크 및 이들의 제조방법 |
US8258066B2 (en) | 2005-12-12 | 2012-09-04 | Milliken & Company | Cleaning device |
US7909595B2 (en) * | 2006-03-17 | 2011-03-22 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to UV radiation using a reflector having both elliptical and parabolic reflective sections |
JP5230221B2 (ja) * | 2007-04-20 | 2013-07-10 | 富士フイルム株式会社 | 熱可塑性フィルムおよびその製造方法 |
JP2009098667A (ja) * | 2007-09-28 | 2009-05-07 | Fujifilm Corp | 液晶表示装置 |
JP2011035253A (ja) * | 2009-08-04 | 2011-02-17 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
JP2011151070A (ja) * | 2010-01-19 | 2011-08-04 | Disco Abrasive Syst Ltd | ウエーハの加工方法 |
CN102483587B (zh) * | 2010-07-22 | 2014-11-05 | 恩斯克科技有限公司 | 曝光装置用光照射装置、光照射装置的控制方法、曝光装置以及曝光方法 |
JP5964580B2 (ja) * | 2011-12-26 | 2016-08-03 | 株式会社ディスコ | ウェーハの加工方法 |
JP6281328B2 (ja) * | 2014-03-06 | 2018-02-21 | 株式会社東京精密 | レーザーダイシング装置及びレーザーダイシング方法 |
JP2015185691A (ja) * | 2014-03-24 | 2015-10-22 | 古河電気工業株式会社 | 半導体ウェハ加工用粘着テープ、該粘着テープの製造方法および半導体ウェハの加工方法 |
JP6305853B2 (ja) * | 2014-07-08 | 2018-04-04 | 株式会社ディスコ | ウエーハの加工方法 |
KR20160011102A (ko) * | 2014-07-21 | 2016-01-29 | 삼성전자주식회사 | 발광 소자 패키지의 제조 방법 |
JP6347714B2 (ja) * | 2014-10-02 | 2018-06-27 | 株式会社ディスコ | ウエーハの加工方法 |
JP6388522B2 (ja) * | 2014-10-27 | 2018-09-12 | 株式会社ディスコ | レーザー加工装置 |
JP6466692B2 (ja) * | 2014-11-05 | 2019-02-06 | 株式会社ディスコ | ウエーハの加工方法 |
-
2016
- 2016-06-02 JP JP2016110703A patent/JP6721420B2/ja active Active
-
2017
- 2017-05-02 TW TW106114484A patent/TWI713734B/zh active
- 2017-05-19 SG SG10201704121WA patent/SG10201704121WA/en unknown
- 2017-05-24 CN CN201710373006.7A patent/CN107457494B/zh active Active
- 2017-05-31 KR KR1020170067814A patent/KR102264764B1/ko active IP Right Grant
- 2017-06-01 US US15/611,380 patent/US9929105B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR102264764B1 (ko) | 2021-06-11 |
KR20170136994A (ko) | 2017-12-12 |
CN107457494B (zh) | 2020-12-22 |
US20170352627A1 (en) | 2017-12-07 |
SG10201704121WA (en) | 2018-01-30 |
JP2017216413A (ja) | 2017-12-07 |
TW201806052A (zh) | 2018-02-16 |
US9929105B2 (en) | 2018-03-27 |
CN107457494A (zh) | 2017-12-12 |
TWI713734B (zh) | 2020-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6721420B2 (ja) | 漏れ光検出方法 | |
TWI679693B (zh) | 晶圓的加工方法 | |
US9758876B2 (en) | Sacrificial cover layers for laser drilling substrates and methods thereof | |
JP5661928B2 (ja) | 積層体の製造方法、基板の処理方法および積層体 | |
KR102467419B1 (ko) | 디스플레이 장치 제조방법 | |
JP5871904B2 (ja) | アブレシブエッチングおよびカッティングのためのフォトレジスト膜および方法 | |
KR101787240B1 (ko) | 표시 장치 | |
WO2015135316A1 (zh) | 光学掩膜板和激光剥离装置 | |
JP2018529527A (ja) | レーザー切断する予定の被覆基板をレーザーで前処理する方法 | |
CN107926111A (zh) | 在挠性基料中连续制造特征的方法和与此相关的产品 | |
JP2017114761A (ja) | コーティング基板及びコーティング基板のカッティング方法 | |
TWI631695B (zh) | 顯示面板的製作方法 | |
TW201440992A (zh) | 光學元件及其製造方法 | |
JP2014033116A (ja) | ウエーハの加工方法 | |
JP2017501431A (ja) | 基板上にパターン化された構造を形成するための方法およびシステム | |
JP2010197820A (ja) | 偏光板の製造方法 | |
KR101960267B1 (ko) | 플렉시블 디스플레이 벤딩을 위한 필름 박리방법 | |
TWI494410B (zh) | 膠帶 | |
JP6230354B2 (ja) | デバイスウェーハの加工方法 | |
JP2019133997A (ja) | ダイボンド用樹脂の敷設方法 | |
JP2009238782A (ja) | 半導体装置及びその製造方法 | |
JP6630527B2 (ja) | 貫通孔を有する粘着フィルムの検査方法 | |
JP2009063268A (ja) | 塗膜乾燥装置 | |
JP7370902B2 (ja) | クラック検出方法 | |
JP2015046446A (ja) | 記録物および記録物製造装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190424 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200514 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20200526 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200618 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6721420 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |