TW201101463A - Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses - Google Patents

Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses Download PDF

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Publication number
TW201101463A
TW201101463A TW099108624A TW99108624A TW201101463A TW 201101463 A TW201101463 A TW 201101463A TW 099108624 A TW099108624 A TW 099108624A TW 99108624 A TW99108624 A TW 99108624A TW 201101463 A TW201101463 A TW 201101463A
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zone
fet
extension
type
dopant
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TW099108624A
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Chinese (zh)
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Constantin Bulucea
William D French
Donald M Archer
Jeng-Jiun Yang
Sandeep R Bahl
D Courtney Parker
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Nat Semiconductor Corp
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    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
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    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
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    • H10D62/149—Source or drain regions of field-effect devices
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    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
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    • H10D62/351—Substrate regions of field-effect devices
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    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
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    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
TW099108624A 2009-03-27 2010-03-24 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses TW201101463A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/382,971 US8084827B2 (en) 2009-03-27 2009-03-27 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses

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TW201101463A true TW201101463A (en) 2011-01-01

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TW099108624A TW201101463A (en) 2009-03-27 2010-03-24 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses

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Country Link
US (2) US8084827B2 (enExample)
EP (1) EP2412016A4 (enExample)
JP (1) JP2012522369A (enExample)
KR (1) KR20110133622A (enExample)
CN (1) CN102365730A (enExample)
TW (1) TW201101463A (enExample)
WO (1) WO2010110902A1 (enExample)

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WO2010110902A1 (en) 2010-09-30
US8377768B2 (en) 2013-02-19
US20120264263A1 (en) 2012-10-18
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JP2012522369A (ja) 2012-09-20
EP2412016A1 (en) 2012-02-01

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