TW201034096A - Bonding method - Google Patents
Bonding method Download PDFInfo
- Publication number
- TW201034096A TW201034096A TW098134959A TW98134959A TW201034096A TW 201034096 A TW201034096 A TW 201034096A TW 098134959 A TW098134959 A TW 098134959A TW 98134959 A TW98134959 A TW 98134959A TW 201034096 A TW201034096 A TW 201034096A
- Authority
- TW
- Taiwan
- Prior art keywords
- output power
- load
- phase
- pressing
- metal unit
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- Wire Bonding (AREA)
Description
201034096 六、發明說明: 前後參照相關申請案 此申請案係基於及主張來自2008年10月22日提出 之先前日本專利申請案第2008-272414號之優先權的利益 ;其整個內容係以引用的方式倂入本文中。 【發明所屬之技術領域】 φ 本發明有關一結合方法,以對一形成在半導體晶片等 上之電極墊片施行導線結合。 【先前技術】 習知導線結合方法利用超音波振動,以電連接半導體 晶片之電極墊片至引線框、配線基板、其他半導體晶片、 與類似者等(譬如,日本專利第JP-A 2004-24 1 7 12號( Kokai ))。 〇 雖然黃金通常被用於傳統之結合導線,特別是近年來 黃金價格中之暴漲已增加使用不貴之銅或銅合金的導線之 需求。然而,銅係遠比黃金更硬的。因此,當結合一導線 端部至該電極墊片時,其係需要增加該導線端部的球狀物 在該電極墊片上之衝擊負載,以使該球狀物充分變形,以 確保該想要之結合強度。藉此,保持關切的是使用銅之導 線結合不幸地造成損壞,諸如電極墊片、半導體晶片等之 碎裂,與其中該球狀物下方的一部份電極墊片被由環繞該 球狀物壓出之偏差。由於此等問題’黃金導線目前壓倒性 201034096 地被使用當作結合導線,即使銅係比黃金較便宜。 【發明內容】 根據本發明的一態樣,提供有一結合方法,其施加振 動至包括銅之金屬單元,同時將該金屬單元壓按至一結合 物件上,以將該金屬單元結合至該結合物件,該方法包括 :施加振動至該金屬單元,並將該金屬單元帶入與該結合 物件接觸,同時施加該等振動;逐漸地增加該金屬單元在 _ 該結合物件上之壓按負載至第一壓按負載;及將該壓按負 載減少至比該第一壓按負載較小之第二壓按負載,且在該 壓按負載抵達該第一壓按負載之後,逐漸地增加該等振動 之輸出功率由第一輸出功率至第二輸出功率,該第一輸出 功率係於該第一壓按負載期間施加。 根據本發明之另一態樣,提供有一結合方法,其施加 振動至包括銅之金屬單元,同時將該金屬單元壓按至一結 合物件上,以將該金屬單元結合至該結合物件,該方法包 G 括:施加振動至該金屬單元,並將該金屬單元帶入與該結 合物件接觸,同時施加該等振動;逐漸地增加該金屬單元 在該結合物件上之壓按負載至第一壓按負載;及將該壓按 負載減少至比該第一壓按負載較小之第二壓按負載,並在 該壓按負載抵達該第一壓按負載之後停止施加該等振動, 且接著將該等振動之輸出功率逐漸地增加至第二輸出功率 ,該第二輸出功率係大於在該第一壓按負載期間所施加之 第一輸出功率。 -6- 201034096 【實施方式】 現在將參考該等圖面敘述本發明之具體實施例。 根據本發明的一具體實施例之結合方法施加振動至一 包括銅之金屬單元,同時將該金屬單元壓按至一結合物件 上,以將該金屬單元結合至該結合物件。特別地是,超音 波導線結合在下文之具體實施例中被敘述爲一範例,其利 用超音波振動以將由銅或包括當作該主要成份之銅的合金 φ 所製成之結合導線(下文亦僅只被稱爲“導線”)結合至 一形成在半導體晶片等上之電極墊片。 如圖1D所說明,一導線21通過一固持工具、亦即 一中空毛細管20。該毛細管20的一頂部被火花所熔化, 以形成一球狀物。該球狀物22之形成可被施行,同時譬 如吹入一含有氫等之氣體,以防止銅之氧化。譬如,該導 線21之直徑可爲25微米,且該球狀物22之直徑可爲46 微米。 〇 該毛細管20係附接至一未示出角狀物之尖部。該角 狀物之另一端部係耦接至一超音波產生器(超音波振動器 )。藉由該超音波產生器所產生之超音波振動經由該角狀 物及該毛細管20被傳送(施加)至該導線21。該角狀物 之尖部係藉由諸如馬達之驅動器裝置可直立地運動。據此 ’附接至該角狀物尖部之毛細管20亦可直立地運動。 現在將敘述依據此具體實施例之超音波導線結合方法 圖1A說明該毛細管20於一直立方向中之位置的暫 201034096 時性位移。圖1A中之直線的一較大傾斜指示該毛細管20 之較高下降或上昇比率。圖1Β說明電極墊片(譬如由鋁 所製成)11、亦即該結合物件上之球狀物22的壓按負載 之暫時性變化。亦即,此壓按負載係藉著該電極墊片11 由於該球狀物22所經歷之實際負載。該壓力係經由該毛 細管20施加至該球狀物22。圖1C說明該球狀物22 (或 該球狀物22及該電極墊片11間之接觸表面)之超音波振 動的輸出功率(或幅度)之暫時性變化。 _ 首先,在時間to,上述超音波產生器被驅動,以經由 該角狀物及該毛細管20施加超音波振動至該導線21之球 狀物22。在此時,該球狀物22係仍然直立地位於該電極 墊片11遠側,且不會接觸該電極墊片11,如圖1D中所 示。 該毛細管20下降朝向該電極墊片11,同時施加上述 之超音波振動。在由該時間to過去一間隔tl之後,當開 始該超音波振動施加時,該球狀物22抵達及接觸該電極 @ 墊片11之表面。在接觸之後,該電極墊片11上之球狀物 22的壓按負載開始逐漸地增加,如圖1B中所示。在此時 ,該負載係該球狀物22撞擊該電極墊片11之撞擊負載。 於此具體實施例中,藉由將該毛細管20之下降比率控制 爲相當低,在該球狀物22接觸該電極墊片11之後的負載 斜升被控制爲漸進的。 通常用作傳統結合導線之黃金係相當柔軟,且該球狀 物撞擊該電極墊片之撞擊負載係增加,以使該球狀物變形 -8 - 201034096 至該想要之直徑及將該球狀物壓按至該電極墊片上。然而 ,銅係比黃金較硬,且因此於該電極墊片被一大撞擊負載 所撞擊之案例中,不合意地導致損壞、諸如該電極墊片及 在其下面之晶片表面的碎裂。 因此,於此具體實施例中,在該球狀物22的接觸之 後,該斜升負載被控制爲漸進的,且一大負載不會即刻地 施加至該電極墊片11,如上面參考圖1B所敘述。藉此, φ 防止對該電極墊片11及在其下面之部份的損壞。 在該球狀物22接觸該電極墊片11之後,該負載增加 至第一壓按負載W1。該第一壓按負載W1具有一需要使 該球狀物22變形至該想要之直徑的量値。換句話說,於 此具體實施例中,該壓按負載係在該球狀物22接觸該電 極墊片11之後逐漸地增加至該第一壓按負載W1,且該球 狀物2 2變形至該想要之直徑,如圖1E中所說明。譬如, 在變形(圖1E)之後,於變形(圖1D)可具有56微米 的直徑之前’一球狀物22具有46微米之直徑。 因爲該球狀物22及該電極墊片11間之撞擊負載的斜 升係漸進的,且該球狀物22係由硬銅或銅合金所製成’ 僅只藉由此具體實施例中之負載所產生的效果係不足以增 加該球狀物22及該電極墊片11間之接觸力。因此’於此 具體實施例中,超音波振動係於該球狀物22及該電極墊 片11接觸之前施加至該球狀物22’且及該球狀物22係 壓按至該電極墊片11上’同時施加該等超音波振動。因 此,該球狀物22於該電極墊片11上之接觸力能藉由以超 201034096 音波振動之能量補充一小壓按負載所增加,甚至同時藉由 使用該小負載防止對該電極墊片11之損壞。 該超音波振動之輸出功率被維持在第一輸出功率pl ,而當該等振動之施加係經過該間隔11開始直至該球狀 物22接觸該電極墊片11及進一步在一隨後之間隔t2期 間,不會由該時間to起伏。 該間隔t2之相位係一相位,其中該球狀物22及該電 極墊片11間之接觸力係增加至使該球狀物22變形至該想 @ 要之直徑。雖然熔合(結合)可在此相位期間局部地發生 於該球狀物22及該電極墊片11之間,結合不會發生遍及 該球狀物22及該電極墊片11之整個接觸表面。換句話說 ,該間隔t2之相位係一相位,其中該球狀物22遍及該想 要之表面積被帶入與該電極墊片11造成接觸,該結合部 份中之間隙被消除,且獲得一狀態,其中可輕易地有利於 金屬之擴散結合。 於該下一相位中,該球狀物22及該電極墊片11係於 ❺ 該表面方向中結合在該整個接觸表面上方。爲此目的,該 壓按負載係減少至比該第一壓按負載W1較小之第二壓按 負載W2,同時逐漸地增加該超音波振動之輸出功率由第 一輸出功率P1至第二輸出功率P2。 特別地是,該壓按負載係在該壓按負載抵達該第一壓 按負載W1之後減少。當該壓按負載抵達該第二壓按負載 W2之後或緊接在其後,該超音波振動之輸出功率係逐漸 地由第一輸出功率P1增加至該第二輸出功率P2。 -10- 201034096 與該間隔t2之相位的壓按負載及輸出功率作比較’ 一間隔t3之相位具有一較小壓按負載及一影響該結合部 份之較大的超音波振動之輸出功率,在此該間隔t2之相 位係由當該球狀物22接觸該電極墊片11與發生該壓按負 載時,直至該等超音波振動之輸出功率由P1增加(圖1E 中所說明之狀態),且該間隔t3之相位係由該等超音波 振動之輸出功率P1的增加開始,同時該壓按負載被維持 φ 在該第二壓按負載W2,直至該壓按負載隨後減少至零( 圖1F中所說明之狀態)。 如此,該球狀物22及該電極墊片1 1係於該間隔t3 之相位期間完全地結合,其中該等超音波振動之輸出功率 係由P1至P2逐漸地增加,同時該壓按負載被維持在由該 第一壓按負載W1所減少之第二壓按負載W2。於此結合 期間,該等超音波振動大幅地起作用;且因爲該壓按負載 係小的,該球狀物22不會進一步變形,並被維持在與該 Φ 間隔t2之相位相同的直徑。藉此,下面所敘述之電極墊 片11的所謂“噴濺”偏差能被避免。 停止施加該等超音波振動的一命令係在該間隔t3之 後半部中發出,在其中維持該第二壓按負載W2,且該等 超音波振動之輸出功率由該第二輸出功率P2減少朝向零 。當該等超音波振動之輸出功率減少時,該毛細管20被 舉起,且該壓按負載由該第二壓按負載W2減少至零。然 而,隨著該等超音波振動之輸出功率由P2減少,該壓按 負載可同時地由該第二壓按負載W2減少至零。 -11 - 201034096 該球狀物22被結合至該電極墊片11,且該毛細管20 因此被舉起,同時由該毛細管20之尖部開口放出該導線 21。該毛細管20在另一結合物體(一引線框之引線、一 配線基板之墊片、另一半導體晶片之墊片等)上方運動, 且施行所謂之楔結合,而不會形成一球狀物。然後,該毛 細管20上昇,且一未示出之夾子接近至切斷該導線21。 藉此,該半導體晶片之電極墊片11係經由該導線21電連 接至該引線框、配線基板、其他半導體晶片等。 _ 現在將參考圖8A至8F敘述一用於此具體實施例之 比較範例。 圖8A說明該比較範例的毛細管20於一直立方向中 之位置的暫時性位移。圖8B說明該比較範例的電極墊片 11上之球狀物22的壓按負載之暫時性變化(該電極墊片 11由於該球狀物22所經歷之實際負載)。圖8C說明該 球狀物22 (或該球狀物22及該電極墊片11間之接觸表 面)之超音波振動的輸出功率(或幅度)之暫時性變化。 ❹ 於間隔tl、t2及t3之每一個中,該球狀物22之狀態係分 別槪要地說明於圖8D、8E '及8F中。 於此比較範例中,該壓按負載係在該球狀物22接觸 該電極墊片11之後逐渐地增加至抵達一壓按負載W3。維 持該壓按負載W3,直至該球狀物22及該電極墊片11間 之結合被完成。該壓按負載W3係上述此具體實施例之第 二壓按負載W2的至少兩倍,且係稍微比該第一壓按負載 W 1較小。 -12- 201034096 在該時間to開始施加該超音波振動之後,於該等間 隔tl及t2期間維持一輸出功率P3。於維持該壓按負載 W3之間隔t3期間,該輸出功率被減少至—比p3較小之 輸出功率P4。P3係大於上述此具體實施例之P1,且稍微 比P 2較小。P 4係稍微大於p 1。 於此比較範例中,在該壓按負載係斜升之後,維持該 相當大之負載W3,直至結合之完成。藉此,該電極墊片 φ 11之所謂噴濺偏差不合意地發生,如圖9A及9B中所說 明。圖9A槪要地說明該狀態,在此已發生該電極墊片11 之噴濺。圖9B係該相同狀態之一電子顯微鏡影像。該電 極墊片11係形成在半導體晶片13之表面上。該半導體晶 片13之表面被一介電保護薄膜12所覆蓋。異於該周邊部 份的電極墊片11之表面係由該介電保護薄膜12暴露。 “噴濺”意指該偏差,在此由於該球狀物22之壓按 負載在導線結合期間變得過大,且該電極墊片11在該球 φ 狀物22下方的一部份1 la被向上壓按與由環繞該球狀物 22壓出。該部份11a係由該電極墊片11壓出,且由於該 等超音波振動之施加延伸或散開在該振動方向中。譬如’ 於於該等電極墊片1 1之間具有60微米或更少的間距之所 謂細間距產品的案例中,該部份1 1 a可被壓出’以抵達該 鄰接之電極墊片,且於該等電極墊片之間不合意地造成一 短路缺陷。當噴濺發生時,因爲靠近其中心部份之電極墊 片11變薄,亦有一不佳可靠性之風險。 反之,如上面於此具體實施例中參考圖1A至1F所 -13- 201034096 敘述,該球狀物22係於該間隔t2之相位中變形至該想要 之直徑;且接著於該下一結合相位中,在減少該壓按負載 由第一壓按負載W1至該第二壓按負載W2之後,該等超 音波振動之輸出功率係由P1增加至P2。該電極墊片11 之噴濺能藉由減少該壓按負載被抑制,藉此於該結合相位 期間防止一過大壓按負載之效應。該等超音波振動主要地 於該結合相位期間起作用,且藉由該球狀物22及該電極 墊片11之間於該表面方向中的有關振動所造成之摩擦促 ❿ 進該球狀物22及該電極墊片11之結合。 在此,於以諸設定施行結合而使得該等超音波振動之 輸出功率係由P1突然改變至P2(在90度或接近此之斜 升角)之案例中,如藉由圖1C中之單點虛線所說明,由 於大量能量瞬時地影響該結合部份,不合意地發生該電極 墊片11之噴濺,甚至於該壓按負載係減少至該第二壓按 負載W2之案例中。據此,其重要的是該等超音波振動之 輸出功率係由P1逐漸地增加至P2。 ❹ 依據上述具體實施例,使用一由銅或具有當作該主要 成份之銅的合金所製成之導線的導線結合能提供一具有高 可靠性之結合,而不會發生影響此導線結合之問題,諸如 電極墊片噴濺及對該電極墊片及/或半導體晶片造成損壞 ,且藉由使用一由銅或具有當作該主要成份之銅的合金所 製成之導線實現成本減少,該銅係比金較便宜的。再者, 因爲不會發生噴濺,具有一較細間距(例如60微米或更 少)的電極墊片之導線結合能被實現,而不會發生墊片間 -14- 201034096 之短路。 用於該第二壓按負載W2對圖1B之第一壓按負載W1 的各種比率,本發明家施行導線結合,且對於多數樣本在 每一比率測量該電極墊片噴濺量(微米)。該等結果被說 明在圖2中。該噴濺量(微米)係總共Wa + Wb,在此Wa 及Wb係圖9A中所說明之電極墊片11的噴濺之部份Ua 的超音波振動方向中之長度。 φ 當W2/W1由0.5增加朝向1時,圖2之結果顯示該 噴濺量增加;當該第二壓按負載W2被減少達0.5及更少 之W2/W1時,於該噴濺量中有極小之變化;及該噴濺量 被抑制至一水準,對於0.5及更少之W2/W1不會造成任 何實際之問題。據此,其想要的是該第二壓按負載W2之 量値係大於零,且不大於該第一壓按負載W1之量値的一 半。然而,太小之第二壓按負載W2導致該結合部份之不 佳的剝離強度。因此,其係需要將該第二壓按負載W2之 〇 下限適當地設定於一範圍中,使得該剝離強度係充足的。 在此,“剝離強度”意指於一水平方向中造成被結合 至該電極墊片之球狀物由該電極墊片剝離的力量。該剝離 強度(mN)及上述該等超音波振動之第二輸出功率P2對 第一輸出功率P1的比率(P2、P1)間之關係被確定。該 等結果被說明在圖3中。 在P2及P1之量値係同等的案例中,該結合係不足的 ,且該剝離強度係不佳的。當P2係增加至高於P 1時,該 剝離強度亦增加。當P2係P1之兩倍或更高時,圖3之結 -15- 201034096 果顯示增加之P2於該剝離強度中造成極小變化;且當P2 係P1之兩倍或更高時,確保該需要之剝離強度。然而, 當P2係太高時發生噴濺。因此,其係需要將P2之上限適 當地設定於一範圍中,使得該噴濺量不是問題。 一斜升角Θ被界定爲該等超音波振動之輸出功率由該 第一輸出功率P1增加至該第二輸出功率P2的斜升角,如 圖4A至4C中所說明。該角度Θ及該噴濺量(圖9A之 Wa + Wb )間之關係被確定。該等結果被所說明在圖5中。 當該斜升角Θ增加時,該等超音波振動之輸出功率於 一較短之時間量(更急遽地)由P1轉變至P2。圖4A說 明該案例,在此Θ = Π=大約35度。圖4B說明該案例,在 此0 = J2 =大約45度。圖4C說明該案例,在此0 = J3 =大約 75度。 圖5之結果顯示當該等超音波振動之輸出功率由P1 至P2的斜升角Θ減少時,亦即當該輸出功率由P 1更緩和 地轉變至P2時,該噴濺量減少。 本發明家調查開始增加該等超音波振動之輸出功率由 P1至P2的時機。圖1B中所說明之壓按負載的波形不只 是一命令信號値,同時爲視該結合表面之狀態等而定的實 際負載。該壓按負載不須馬上由該第一壓按負載W1轉變 (減少)至該第二壓按負載W2。於該超音波振動之增加 係經過由第一壓按負載W1轉變至該第二壓按負載W2( 特別是在靠近該第一壓按負載W1之區域中)的中途開始 之案例中,上面所陳述之噴濺可發生。 -16- 201034096 據此,其想要的是在開始該等超音波振動之輸出功率 的增加之前,等候該壓按負載抵達該第二壓按負載W2, 亦即,當抵達該第二壓按負載W2時或在抵達該第二壓按 負載W2之後,開始該輸出功率之增加。藉由施行此一控 制,該等超音波振動能被可靠地防止超過P1,同時該壓 按負載係大於該第二壓按負載W2;上面所陳述之噴濺能 被防止;且該可靠性能更增加。 ❹ 關於獲得上述效果,該間隔t2及該間隔t3間之長度 關係沒有問題,在此該壓按負載被改變至W1,且該等超 音波振動之輸出功率於該間隔t2期間被維持在P 1,及該 壓按負載被維持在W2,且該等超音波振動之輸出功率於 該間隔t3期間被改變至P2。然而,該間隔t3係一用於結 合之間隔;且因此,於該間隔t3係不大於該間隔t2之案 例中,該間隔t3通常係不足以獲得充分強度之結合,其 中該球狀物係變形。雖然其係可能使用一相當長之間隔t2 參 ,在該球狀物已變形至該想要直徑之後,爲維持該間隔t2 的狀態係時間之浪費,且該效率減少。因此,t2<t3係有 利的。 圖6A至6C係類似於根據本發明的另一具體實施例 之超音波導線結合方法的圖1A至1C之那些的時序圖。 當該等超音波振動係於接觸該電極墊片之前施加至該 球狀物時,該間隔11由該時間t0之相位及該間隔t2之相 位係類似於圖1 A至1 C中所說明之上述具體實施例的那 些者。 -17- 201034096 於此具體實施例中,在由第一壓按負載W1減少該壓 按負載至該第二壓按負載W2之後,停止該等超音波振動 之施加(該輸出功率由P1減少至零),且接著該輸出功 率係逐漸地增加至該第二輸出功率P2。特別地是,該等 超音波振動之輸出功率由P1的減少在該間隔t2消逝之後 開始,且當該間隔t3已由該減少之開始消逝時,該輸出 功率抵達零。然後,類似於上面所陳述之具體實施例,該 等超音波振動之輸出功率係由零逐漸地增加至該第二輸出 φ 功率P2,同時該壓按負載被維持在該第二壓按負載W2, 且該球狀物及該電極墊片被結合。 於此具體實施例中,一旦中途經過由P1至P2之增加 的轉變,該等超音波振動之輸出功率係由P1減少至零。 藉此,當該壓按負載在降落至該第二壓按負載W2之前的 一階段係相當大時,該等超音波振動能被可靠地防止免於 不合意地超過P1;上面所陳述之噴濺能被可靠地防止; 及該可靠性能被更增加。 @ 圖7A至7C係類似於根據本發明的又另一具體實施 例之超音波導線結合方法的圖1A至1C之那些的時序圖 〇 亦於此具體實施例中,類似於圖6A至6C中所說明 之上面所陳述的具體實施例,一旦中途經過由P1至P2之 增加的轉變,該等超音波振動之輸出功率係由P1減少至 零。藉此,當該壓按負載在降落至該第二壓按負載W2之 前的一階段係相當大時,該等超音波振動能被可靠地防止 -18- 201034096 免於不合意地超過PI;上面所陳述之噴濺能被可靠地防 止;及該可靠性能被更增加。 於此具體實施例中,雖然該等超音波振動之輸出功率 馬上由P 1降下至零,其係更易於控制如圖6A至6C所說 明之輸出功率,以由Pi逐漸地減少至零。 在上文’本發明之示範具體實施例係參考特定範例敘 述。然而’本發明係不限於此。基於本發明之技術精神, φ 各種修改係可能的。 該結合物件係不限於半導體晶片之電極墊片,並可包 括一墊片及/或一配線基板之配線、一引線框之引線等。 再者’本發明能將一包括銅之金屬單元結合至一較柔軟之 結合物件,而不會發生上述之損壞或噴濺;且本發明不被 限制於上面所陳述之示範具體實施例中所敘述的導線結合 。例如,用於經由該等凸塊將包括諸如覆晶封裝之凸塊的 零組件等結合至結合物件,本發明係有效的。 參 【圖式簡單說明】 圖1 A至1 F係槪要視圖,顯示根據此具體實施例的 結合方法中之毛細管位移(capillary displacement)、一 壓按負載與超音波振動之輸出功率的暫時性變化、及主要 相位中之結合部份的狀態; 圖2係一曲線圖,顯不圖1B中之(桌一壓按負載 W2/第一壓按負載W1)與一墊片噴濺量間之關係; 圖3係一曲線圖,顯示圖1C中之(第二輸出功率 -19- 201034096 P2/第一輸出功率PI )與結合部份的剝離強度間之關係; 圖4A至4C係槪要視圖,顯示一斜升角0於超音波振 動之輸出功率由P1增加至P2期間的變化; 圖5係一曲線圖’顯示圖4A至4C中所示斜升角Θ與 該墊片噴濺量間之關係; 圖6A至6C係槪要視圖,顯不根據另一具體實施例 的結合方法中之毛細管位移、壓按負載與該等超音波振動 之輸出功率的暫時性變化; 圖7A至7C係槪要視圖,顯示根據又另一具體實施 例的結合方法中之毛細管位移、壓按負載與該等超音波振 動之輸出功率的暫時性變化; 圖8A至8F係槪要視圖,顯示根據一比較範例的結 合方法中之毛細管位移、一壓按負載與該等超音波振動之 輸出功率的暫時性變化、及主要相位中之結合部份的狀態 ;及 圖9A係一槪要視圖,用於敘述該電極墊片之“噴濺 ”,且圖9B係發生“噴濺”之結合部份的被觀察電子顯 微鏡影像。 【主要元件符號說明】 1 1 :電極墊片 1 1 a :部份 12 :保護薄膜 1 3 =半導體晶片 -20- 201034096 20 :毛細管 2 1 :導線 2 2 :球狀物 P 1 :輸出功率 P 2 :輸出功率 P 3 :輸出功率 P4 :輸出功率 tO :時間 11 :間隔 t2 :間隔 t3 :間隔 W1 :壓按負載 W2 :壓按負載 W3 :壓按負載
Claims (1)
- 201034096 七、申請專利範園: 1· 一種結合方法,其施加振動至包括銅之金屬單元, 同時將該金屬單元壓按至一結合物件上,以將該金屬單元 結合至該結合物件,該方法包括: 施加振動至該金屬單元,並使該金屬單元與該結合物 件接觸,同時施加該等振動: 逐漸地增加該金屬單元在該結合物件上之壓按負載至 第一壓按負載;及 將該壓按負載減少至比該第一壓按負載較小之第二壓 按負載’且在該壓按負載到達該第一壓按負載之後,逐漸 地增加該等振動之輸出功率由第一輸出功率至第二輸出功 率’該第一輸出功率係於該第一壓按負載期間施加。 2. 如申請專利範圍第1項之結合方法,其中該第二壓 按負載之量値係大於零及不大於該第一壓按負載之量値的 一半。 3. 如申請專利範圍第1項之結合方法,其中當該壓按 負載到達該第二壓按負載時,該等振動之輸出功率開始增 加。 4. 如申請專利範圍第1項之結合方法,其中在該壓按 負載到達該第二壓按負載之後,該等振動之輸出功率開始 增加。 5·如申請專利範圍第1項之結合方法,其中該金屬單 元係形成在導線的一端部上之球狀物。 6.如申請專利範圍第1項之結合方法,其中該金屬單 201034096 元係在第一相位中變形,在該第一相位將該壓按負載逐漸 地增加至該第一壓按負載,同時將該輸出功率維持在該第 一輸出功率。 7.如申請專利範圍第6項之結合方法,其中該金屬單 元在第二相位中的變形不會超過在該第一相位中的變形, 該第二相位將該輸出功率增加至該第二輸出功率,同時將 該壓按負載維持在該第二壓按負載。 0 8.如申請專利範圍第1項之結合方法,其中該第二輸 出功率係不少於該第一輸出功率之兩倍。 9. 如申請專利範圍第1項之結合方法,其中第二相位 之間隔係比第一相位之間隔較長,該第一相位將該壓按負 載逐漸地增加至該第一壓按負載,同時將該輸出功率維持 在該第一輸出功率,該第二相位將該輸出功率改變至該第 二輸出功率’同時將該壓按負載維持在該第二壓按負載。 10. 如申請專利範圍第1項之結合方法,其中該等振 φ 動包括超音波振動。 Ϊ1_ —種結合方法’其施加振動至包括銅之金屬單元 ’同時將該金屬單元壓按至一結合物件上,以將該金屬單 元結合至該結合物件,該方法包括: 施加振動至該金屬單元,並使該金屬單元與該結合物 件接觸,同時施加該等振動; •逐漸地增加該金屬單元在該結合物件上之壓按負載至 第一壓按負載;及 將該壓按負載減少至比該第一壓按負載較小之第二壓 -23- 201034096 按負載,並在該壓按負載到達該第一壓按負載之後停止施 加該等振動,且接著將該等振動之輸出功率逐漸地增加至 第二輸出功率,該第二輸出功率係大於在該第一壓按負載 期間所施加之第一輸出功率。 12. 如申請專利範圍第11項之結合方法,其中該第二 壓按負載之量値係大於零及不大於該第一壓按負載之量値 的一半。 13. 如申請專利範圍第11項之結合方法,其中當該壓 φ 按負載到達該第二壓按負載時,該等振動之輸出功率開始 增加。 14. 如申請專利範圍第11項之結合方法,其中在該壓 按負載抵達該第二壓按負載之後’該等振動之輸出功率開 始增加。 15. 如申請專利範圍第11項之結合方法,其中該金屬 單元係形成在導線的一端部上之球狀物。 16. 如申請專利範圍第11項之結合方法’其中該金屬 〇 單元係在第一相位中變形,在該第一相位將該壓按負載逐 漸地增加至該第一壓按負載’同時將該輸出功率維持在該 第一輸出功率。 17. 如申請專利範圍第16項之結合方法’其中該金屬 單元在第二相位中的變形不會超過在該第~相位中的變形 ,該第二相位將該輸出功率增加至該第二輸出功率,同時 將該壓按負載維持在該第二壓按負載。 18. 如申請專利範圍第11項之結合方法,其中該第二 -24- 201034096 輸出功率係不少於該第一輸出功率之兩倍。 I9·如申請專利範圍第11項之結合方法,其中 位之間隔係比第一相位之間隔較長,該第一相位將 負載逐渐地增加至該第一壓按負載,同時將該輸出 持在該第一輸出功率,該第二相位將該輸出功率改 第二輸出功率,同時將該壓按負載維持在該第二壓 〇 φ 20.如申請專利範圍第n項之結合方法,其中 動包括超音波振動。 第二相 該壓按 功率維 變至該 按負載 該等振 -25-
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US5192015A (en) * | 1991-11-20 | 1993-03-09 | Santa Barbara Research Center | Method for wire bonding |
JPH08181175A (ja) * | 1994-12-22 | 1996-07-12 | Toshiba Corp | ワイヤボンディング方法 |
TW335526B (en) | 1996-07-15 | 1998-07-01 | Matsushita Electron Co Ltd | A semiconductor and the manufacturing method |
JP3504448B2 (ja) * | 1996-10-17 | 2004-03-08 | 株式会社ルネサステクノロジ | 半導体装置 |
JP3377934B2 (ja) * | 1997-07-22 | 2003-02-17 | 松下電器産業株式会社 | バンプボンディング方法およびバンプボンディング装置 |
JP3833812B2 (ja) | 1998-03-17 | 2006-10-18 | 松下電器産業株式会社 | バンプ付電子部品のボンディング方法 |
JP3942738B2 (ja) * | 1998-07-17 | 2007-07-11 | 松下電器産業株式会社 | バンプ接合装置及び方法、並びに半導体部品製造装置 |
JP2000216190A (ja) | 1999-01-26 | 2000-08-04 | Sumitomo Electric Ind Ltd | ボンディングツ―ル及びボンディング方法 |
JP2002353266A (ja) * | 2001-05-30 | 2002-12-06 | Moric Co Ltd | ワイヤボンディング方法および装置 |
JP2004241712A (ja) | 2003-02-07 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 超音波ボンディング方法 |
DE102004048220A1 (de) * | 2004-09-30 | 2006-04-06 | Basf Ag | Kontaktierung thermoelektrischer Materialien durch Ultraschallschweißen |
JP2006135207A (ja) * | 2004-11-09 | 2006-05-25 | Fujitsu Ltd | フリップチップ接合方法 |
TW200732154A (en) * | 2005-11-02 | 2007-09-01 | Checkpoint Systems Inc | In-mold chip attach |
JP4984552B2 (ja) | 2006-01-30 | 2012-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US20120153444A1 (en) * | 2009-06-18 | 2012-06-21 | Rohm Co., Ltd | Semiconductor device |
-
2008
- 2008-10-22 JP JP2008272414A patent/JP5135164B2/ja not_active Expired - Fee Related
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2009
- 2009-09-10 US US12/556,918 patent/US8308049B2/en active Active
- 2009-10-15 TW TW098134959A patent/TWI424511B/zh active
- 2009-10-22 CN CN2009101740638A patent/CN101728290B/zh active Active
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US20100096437A1 (en) | 2010-04-22 |
TWI424511B (zh) | 2014-01-21 |
CN101728290A (zh) | 2010-06-09 |
JP5135164B2 (ja) | 2013-01-30 |
US8308049B2 (en) | 2012-11-13 |
CN101728290B (zh) | 2012-07-04 |
JP2010103259A (ja) | 2010-05-06 |
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