TW201029081A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
TW201029081A
TW201029081A TW099104802A TW99104802A TW201029081A TW 201029081 A TW201029081 A TW 201029081A TW 099104802 A TW099104802 A TW 099104802A TW 99104802 A TW99104802 A TW 99104802A TW 201029081 A TW201029081 A TW 201029081A
Authority
TW
Taiwan
Prior art keywords
semiconductor device
resin
wiring
short side
protrusions
Prior art date
Application number
TW099104802A
Other languages
English (en)
Inventor
Nobuaki Hashimoto
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW201029081A publication Critical patent/TW201029081A/zh

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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)

Description

201029081 六、發明說明： 【發明所屬之技術領域】 本發明係關於半導體裝置。 【先前技術】 半導體裝置（參考例如曰本特開平2_272737號公報）安裝 於佈線基板等之電子模組係為人所知。而半導體裝置或佈 線基板可能受到電子模組之動作環境變化所造成之溫度變 化、或由熱循環試驗所造成之溫度變化等之影響而膨脹收 ❿ 縮。而且’於半導體裝置與佈線基板之熱膨脹係數不同之 情況等’唯恐於半導體裝置與佈線基板之界面產生力。於 此力過大之情況，若可防止半導體裝置發生故障，則亦可 提供可靠性高之電子模組。 [發明所欲解決之問題] 本發明之目的在於提供一種可靠性高之半導體裝置。 【發明内容】 (1)關於本發明之半導體裝置包含： ❿ 半導體晶片，其係形成有複數電極而成，形成有前述電 極之面構成長方形； 複數樹脂突起，其係形成於前述半導體晶片之前述面；及 佈線’其係與前述電極電性地連接而成，包含形成於前 述樹脂突起上之電性連接部； 於前述面之短邊之端部區域内，前述樹脂突起係構成在 父又於前述短邊之方向延伸之形狀。 若根據本發明，可使配置於端部區域之樹脂突起不易變 146478.doc 201029081 形。因此，可提供-種可靠性高之半導體農置，其係於電 路基板等安裝半導體裝置後，即使於半導體裝置受到溫度 變化等之影響而膨脹收縮之情況，仍可確保電性連接可靠 性。 (2) 如該半導體裝置，其中 於前述端部區域内’前述樹脂突起亦可構成在正交於前 述短邊之方向延伸之形狀。 (3) 如該半導體裝置，其中 於前述端部區域内，前述樹脂突起亦可構成沿著自前述 面之中央區域延伸為放射狀之假想直線延伸之形狀。 (4) 如該半導體裝置，其中 於前述端部區域内，構成在交又於前述短邊之方向延伸 之形狀之複數前述樹脂突起亦可沿著前述短邊排列而成。 (5) 如該半導體裝置，其中 别述複數樹脂突起亦可均構成在交叉於前述短邊之方向 延伸之形狀。 【實施方式】 以下參考圖式，說明有關適用本發明之實施形態。但本 發明不限定於以下之實施型態。而且，本發明包含自由組 合以下内容者。 圖1 (A)〜圖3係用以說明有關適用本發明之實施型態之半 導體裝置之圖。於此，圖1(A)〜圖1(D)係表示關於適用本 發明之實施型態之半導體裝置1之圖。此外，圖1(A)為半 導體裝置1之鳥瞰圖。但於圖1(A)，為了說明而省略電極 146478.doc 201029081 14及佈線30(電性連接部32)。而且，圖1(B)為圖1(A)之一 部分放大圖。而圖1(C)為圖1(B)之IC-IC線刮面之一部分放 大圖，圖1(D)為圖1(B)之ID-ID線剖面之一部分放大圖。 如圖1(A)〜圖1(D)所示，關於本實施型態之半導體裝置 包3半導體曰曰片1〇。半導體晶片ίο亦可為例如石夕晶片。於 半導體裝置10，亦可形成有積體電路12(參考圖1(D))。積 體電路12之構成並未特別限定，但亦可包含例如電晶體等 主動元件、或電阻、線圏、電容器等被動元件。 如圖1(B)所示，於半導體晶片1〇，形成有複數電極14。 然後，如圖1(A)所示，半導體晶片1〇之形成有電極14之面 15係構成長方形。面15亦可為半導體晶片1〇之主動面。亦 即，半導體晶片10之面15亦可為形成有積體電路12之面。 電極14亦可避開面15之中央部而僅形成於周緣部。或者， 電極14亦可於面15，形成為區陣列狀（為包含中央部之區 域）°此時’電極亦可複數列複數行地排列為格子狀或 隨機排列。 電極14亦可與積體電路12電性連接。或者，包含未電性 連接於積體電路12之導電體在内而稱為電極14。電極14亦 可為半導體晶片之内部佈線之一部分。電極14亦能以鋁或 銅等金屬形成。如圖1(C)及圖1(D)所示，於半導體晶片1〇 之面15，亦可形成鈍化膜16，此時，電極14亦可為來自鈍
化膜16之露出區域。此外，鈍化膜亦可為例如以〇2或SiN 等之無機絕緣膜。或者，鈍化膜丨6亦可為聚醯亞胺樹脂等 之有機絕緣膜。 146478.doc 201029081 如圖1(A)〜圖1(D)所示’關於本實施型態之半導體裝置 包含樹脂突起20。樹脂突起20係形成於半導體晶片10上而 成。樹腊突起20亦可形成於純化膜16上《樹脂突起20亦可 避開電極14(使其露出）而形成。 樹脂突起20係形成於半導體晶片1〇之形成有電極14之面 (面15)而成。樹脂突起20亦可比電極14更配置於面15之外 側之區域内。樹脂突起2 0亦可至少一部分配置於面丨5之短 邊17之端部區域18内而形成。樹脂突起2〇亦可均配置於端 部區域18内而形成。此外，短邊17之端部區域18亦可指面 15之短邊17之周邊區域。短邊17之端部區域18亦可指例如 以面I5内之短邊17作為一邊之正方形區域。或者，短邊17 之端部區域18亦可為’從面15之短邊17開始之寬度與半導 體μ片10之厚度相同之區域。或者，短邊17之端部區域18 亦可指比積體電路12之形成區域外側之區域。 如圖1(A)及圖1(B)所示，樹脂突起2〇係於面15之短邊17 之端部區域18内，構成延伸在與短邊17交又之方向之形 狀。樹脂突起20係於端部區域18内，構成延伸在與短邊17 正父之方向之形狀。此外，於關於本實施型態之半導體裝 置如圖1 (A)所示，於端部區域18内，構成在交又於短邊 17之方向延伸之形狀之複數樹脂突起2〇，亦可沿著短邊” 排列。此時，如圖1(A)所示，複數樹脂突起2〇亦可於端部 18内，著短邊17排列為一行。或者，複數樹脂突起2〇亦 可於端部18内排列為複數行（未圖示）。若根據此，由於可 擴大後述之電性連接部32之可形成區域，因此不增大半導 146478.doc 201029081 體晶片ίο之外形即可確保許多連接點，並且可提高電性連 接部32之配置自由度。 如圖1(A)及圖1(B)所示，關於本實施型態之半導體裝置 亦可包含形成於半導體晶片10之面15之其他樹脂突起22。 樹脂突起22亦可構成沿著面15之長邊19延伸之形狀。亦 即，關於本實施型態之半導體裝置中，樹脂突起亦可均構 成在交叉於短邊17之方向延伸之形狀。此外，如圖丨（A)所 示，樹脂突起22亦可沿著面15之長邊19僅形成1個亦可。 但沿著面15之長邊19形成有複數樹脂突起亦可（未圖示）。 此外’如圖1(A)所示，樹脂突起22亦可避開端部區域18而 形成。但樹脂突起22亦可形成到達端部區域18内。於此情 況，可說於端部區域18内，樹脂突起構成在交叉於短邊17 之方向延伸之形狀。 樹脂突起20，22之材料並未特別限定，適用已習知之任 一材料均可。例如樹脂突起20，22以聚醯亞胺樹脂、石夕變 性聚醯亞胺樹脂、環氧樹脂、矽變性環氧樹脂、苯環丁烯 (BCB ; benzoCyCi〇butene)、聚笨并嚼唾(pB〇 ; p〇lybenz〇xaz〇le)、 酚樹脂等樹脂形成。 如圖1(B)〜圖1(D)所示，關於本實施型態之半導體裝置 包含佈線30,其係與電極14電性連接而成，包含形成於樹 月曰犬起20上之電性連接部32 ^例如電性連接部亦可指形 ^為，從電極14上引出而到達樹脂突起2〇上之佈線3〇之一 /刀（與樹知突起20重複之區域）。然後，電性連接部32亦 可指佈線30中作為外部端子利用之部分。電性連接部^亦 146478.doc 201029081 可構成沿著短邊17延伸之形狀。此時’電性連接部η亦可 構成與樹脂突起20正交而延伸之形狀。此外，如圖所 不，於1個樹脂突起20上，亦可僅形成丨個電性連接部32。 然後，電性連接部32亦可與端部區域18重複而配置。 佈線30(電性連接部32)之構造及材料並未特別限定。例 如佈線30亦能以單層來形成。或者，佈線3Q亦能以複數層 來形成。此時，佈線30亦可包含：由鈦鎢所形成之第一層 及由金形成之第二層（未圖示）。 關於本實施型態之半導體裝置丨亦可形成以上之構成。 若藉由半導體裝置1，於安裝時及安裝後，不易引起佈線 3〇之損傷，可提供可靠性高之半導體裝置。以下，說明有 關其效果。 於佈線基板安裝半導體裝置丨之方法並未特別限定，參 考圖2(A)及圖2(B)說明有關其一例。首先，說明有關佈線 基板40。佈線基板40亦可包含：基礎基板42及佈線圖案 44。基礎圖案42之材料並未特別限制，亦可為有機系或無 機系之任一材料，或含此等之複合構造。作為基礎基板 42，亦可利用由無機系材料所形成之基板。此時，基礎基 板42亦可為陶瓷基板或玻璃基板。基礎基板42為玻璃基板 之情況，佈線基板40亦可為光電面板（液晶面板、電激發 光面板等）之一部分。佈線圖案44亦可由iT〇(Indium Tin 〇xlde:氧化銦錫）、Cr、Al等之金屬膜、金屬化合物膜或 其等之複合膜來形成。此時，佈線圖案44亦可電性連接於 驅動液晶之電極（掃描電極、信號電極、對向電極等或 146478.doc 201029081 者’基礎基板42亦可為含聚對苯二曱酸乙二醋（pET)之基 板或膜。或者，作為基礎基板42，亦可使用含聚醯亞胺樹 脂之可撓性基板。作為可撓性基板，亦可使用 FPC(Flexible Printed Circuit :可撓性印刷電路）或 TAB(Tape Automated Bonding :捲帶自動接合）技術中所使 用之捲帶。此時，佈線圖案44亦可疊層例如銅（Cu)、鉻 (Cr)、鈦（Ti)、鎳（Ni)、鈦鎢（Ti-W)中之任一者而形成。 以下，說明有關將半導體裝置！安裝於佈線基板4〇之步 ❿ 驟。首先，如圖2(A)所示，於佈線基板40上配置半導體裝 置1以半導體裝置1之電性連接部32(樹脂突起2〇)與佈線 基板40之佈線圖案44對向之方式調整位置。 此時，藉由未圖示之治具（接合工具）來保持半導體裝置 1亦可。於治具内建加熱器，藉此加熱半導體裝置丨（電性 連接部32)亦可。此外，藉由加熱半導體裝置i，電性連接 部32受到加熱，可確實地電性連接電性連接部32與佈線圖 案44。 此外，於半導體裝置1與佈線基板4〇間，設置未圖示之 接著劑亦可。接著劑亦可利用例如膜狀之接著劑。或者， 作為接著劑亦可利用糊狀之接著劑。接著劑亦可為絕緣性 之接著劑。接著劑亦可為樹脂系接著劑。 其後，如圖2(B)所示，使半導體裝置！與佈線基板4〇接 近，使電性連接部32與佈線圖案44接觸。藉此電性連接電 性連接部32與佈線圖案44。於本步驟，亦可藉由半導體晶 片及佈線基板40壓碎樹脂突起2〇，使樹脂突起2〇彈性變 146478.doc 201029081 形。藉此，由於可利用樹脂突起20之彈力壓緊電性連接部 32與佈線圖案44,因此可製造電性連接可靠性高之電子模 組。 並且於半導體裝置1與佈線基板40間，亦可形成未圖 示之接著層。藉由接著層來維持半導體晶片10與佈線基板 40之間隔亦可。亦即，藉由接著層，維持樹脂突起彈性 變形之狀態亦可。例如藉由於樹脂突起2〇彈性變形之狀態 下形成接著層，以維持樹脂突起20彈性變形之狀態亦可。 藉由以上步驟，將半導體裝置1安裝於佈線基板40亦 可。然後，經過檢查步驟而製造圖3所示之電子模組1〇〇〇 亦可。電子模組1000亦可為顯示裝置。顯示裝置亦可為例 如液晶顯示裝置或EL(Electrical Luminescence :電激發光） 顯示裝置。然後，半導體裝置丨（半導體晶片1〇)亦可為控制 顯示裝置之驅動器1C。 半導體裝置1及佈線基板40可能於上述安裝步驟之過程 或安裝步驟後而使其尺寸變化。例如先前所說明，於將半 導體裝置1安裝於佈線基板40之步驟中，若將半導體裝置i 搭載於佈線基板40後，未有來自治具之熱供給，則半導體 裝置1及佈線基板40會冷卻、收縮，外部尺寸變小。咬 者’若安裝後之動作環境變化或進行檢查用之熱循環試 驗，則半導體裝置1及佈線基板40之尺寸會變化。 然而，於半導體裝置1 ’樹脂突起20形成於半導體晶片 10上。因此’樹脂突起20之基端部會追隨於半導體晶片1〇 之尺寸變化而偏離位置。而且，樹脂突起20之上端部係介 146478.doc -10- 201029081 由電性連接部32而被壓緊於佈線基板40。因此，樹脂突起 20之上端部會追隨於佈線基板4〇之尺寸變化（佈線圖案44 之位置偏離）而偏離位置。總括來說，樹脂突起20係基端 部追隨於半導體晶片1〇而偏離位置，上端部追隨於佈線基 板40而偏離位置。因此，若半導體裝置丨（半導體晶片ι〇)與 佈線基板40(佈線圖案44)之尺寸變化率或尺寸變化之方向 不同’則唯恐力會施加於樹脂突起20。 然後，由於半導體晶片1 〇構成長方形，因此尺寸變化係 朝短邊17之端部區域18累積。因此，半導體晶片10之面15 係尺寸在短邊17之端部區域18比在中央區域大幅變化。而 且’於短邊17之端部區域18，半導體晶片10係往沿著長邊 1 9之方向之尺寸變化量比往沿著短邊丨7之方向之尺寸變化 量大。因此，可預測配置於半導體晶片1〇之短邊17之端部 區域18之樹脂突起20，會於交叉於半導體晶片1〇之短邊17 之方向承受甚大之力。 然後’若於樹脂突起20加上甚大之力，則唯恐樹脂突起 2〇會變形。若根據半導體裝置i，於樹脂突起2〇上設有電 性連接部32而成，或者佈線30形成為通過樹脂突起2〇上而 成。因此，若樹脂突起20變形，力會施加於佈線3〇或電性 連接部32，唯恐使其損傷。 然而，若根據半導體裝置1，配置於半導體晶片1〇之短 邊Π之端部區域18之樹脂突起2〇係構成在交又於短邊以之 方向延伸之形狀。亦即，樹脂突起2〇構成即使於承受有交 叉於短邊17之方向之力之情況下，仍不易變形之形狀。因 146478.doc 201029081 此’若根據半導體裝置1，即使於半導體晶片1〇構成長方 形之情況，形成於樹脂突起20上之電性連接部32(佈線3〇) 仍不易損傷’可提供可靠性高之半導體裝置。 此外，於半導體裝置1 ’電性連接部32(佈線3〇)亦可於 樹脂突起20上’構成沿著短邊17延伸之形狀。若根據此， 於半導體晶片10之端部區域18，電性連接部32係寬度對半 導體晶片10之膨脹收縮方向變寬。因此，即使於半導體穿 置1膨脹收縮之情況’於半導體晶片10之端部區域18，電 性連接部32仍不易受損傷。特別於此情況，不使佈線3〇之 寬度變粗即可使電性連接部32之外觀上之寬度變粗，因此 佈線30之牵繞亦變得容易。 (變形例） 本發明不限於以上之實施型態，可實現各種變形例。以 下’說明有關適用本發明之實施型態之變形例之半導體裝 置。 如圖4所示，於1個樹脂突起2〇形成有複數電性連接部32 亦可。若根據此，由於可緻密地形成電性連接部32，因此 不增大半導體晶片1〇(半導體裝置1)之外形即可增加電性連 接部32之數目。此外’如圖4所示，樹脂突起2〇亦可配置 於比電極14内側之區域。 於圖5所示之例’於1個樹脂突起20形成有複數電性連接 部32而成。然後，形成於1個樹脂突起2〇上之電性連接部 32 ’係與沿著該樹脂突起20排列之複數電極14電性連接而 成。若根據此’由於可使佈線30之長度一定，因此可提供 146478.doc 12 201029081 .. 能南精度地傳達信號之半導體裝置。 於圖6所示之例，半導體裝置包含樹脂突起25。樹脂突 起25係於端部區域18内，構成在從面15之中央區域延伸為 放射狀之假想直線1〇〇延伸之形狀。半導體晶片1〇受到溫 度變化之影響，會有以中央區域為基點而放射狀地膨脹收 縮之情況。若根據本變形例，於半導體晶片1〇以中央區域 為基點而放射狀地膨脹收縮之情況，可更確實地防止樹脂 突起變形。此外，此時，電性連接部32構成沿著短邊口延 籲 伸之形狀，或構成正交於樹脂突起25而延伸之形狀均可。 此外，本發明不限定於上述實施型態，可實現各種變 形。例如本發明包含實質上與實施型態所說明之構成同一 之構成（例如功能、方法及結果同一之構成，或目的及效 果同一之構成）。而且，本發明包含將實施型態所說明之 構成之非本質部分置換後之構成。而且，本發明包含與實 施型態所說明之構成發揮同一作用效果之構成、或可達成 同一目的之構成。而且’本發明包含於實施型態所說明之 參 構成附加有習知技術之構成。 【圖式簡單說明】 圖1(A)〜圖1(D)係用以說明有關適用本發明之實施型態 之半導體裝置之圖。 圖2(A)及圖2(B)係用以說明有關適用本發明之實施型態 之半導體裝置之圖。 圖3係用以說明有關適用本發明之實施型態之半導體裝 置之圖》 146478.doc -13- 201029081 圖4係用以說明有關適用本發明之實施型態之變形例之 半導體裝置之圖。 圖5係用以說明有關適用本發明之實施型態之變形例之 半導體裝置之圖。 圖6係用以說明有關適用本發明之實施型態之變形例之 半導體裝置之圖。 【主要元件符號說明】 1 10 12 14 16 17 18 19 20 22 25 30 32 40 42 44 100
半導體裝置 半導體晶片 積體電路 電極 鈍化膜 短邊 端部區域 長邊
樹脂突起 樹脂突起 樹脂突起 佈線 電性連接部 佈線基板 基礎基板 佈線圖案 假想直線 146478.doc -14-

Claims (1)

  1. 201029081 七、申請專利範園： 1· 一種半導體裝置，其包含·· 半導體晶片，其係形成有複 形之面； ㈣祕丨具有構成長方 複數樹脂突起’其係於前述面之短邊之端部區域内， 排列於紐邊所延伸之方向上而形 • ^ ^ 構成延伸在與前 透⑺夂伸之方向交叉之方向的形狀，·及 佈線，其係與前述電極電性地連接， • 脂突起上； β々形成於樹 前述電極係自前述樹脂突起隔開而配置， 前述佈線係於前述樹脂突起上構成延伸在前述短邊所 延伸之方向的形狀。 2_如請求項1之半導體裝置，其中 前述樹脂突起係構成延伸在與前述短邊所延伸之方 正交之方向的形狀。 - 3.如請求項1之半導體裝置，其中 前述樹脂突起係與相鄰之樹脂突起在延伸 同。 上不 4. 如請求項1之半導體裝置，其中 於Η固前述樹脂突起上形成有複數佈線之—部份 5. 如請求項1之半導體裝置，其中 於1個前述樹脂突起上形成有1條佈線之—部份。 6. 如請求項1之半導體裝置，其中 月！1述電極係排列於前述短邊所延伸之方向。 146478.doc 201029081 7. 如請求項1之半導體裝置，其中 前述電極係排列於與前述短邊所延伸之方向交叉之方 向。 8. 如請求項1之半導體裝置，其中 前述樹脂突起係構成半圓柱形狀。 146478.doc
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JP5790916B2 (ja) * 2011-03-15 2015-10-07 セイコーエプソン株式会社 半導体装置の製造方法

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US20070108607A1 (en) 2007-05-17
US7777332B2 (en) 2010-08-17
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US8115309B2 (en) 2012-02-14
US20100252925A1 (en) 2010-10-07

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