CN1964032A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN1964032A
CN1964032A CNA2006101432370A CN200610143237A CN1964032A CN 1964032 A CN1964032 A CN 1964032A CN A2006101432370 A CNA2006101432370 A CN A2006101432370A CN 200610143237 A CN200610143237 A CN 200610143237A CN 1964032 A CN1964032 A CN 1964032A
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semiconductor device
resin projection
minor face
resin
semiconductor chip
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桥元伸晃
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Seiko Epson Corp
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Seiko Epson Corp
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Abstract

本发明提供高信赖性的半导体装置，其包括：由多个电极(14)构成且形成有电极(14)的面(15)形成长方形的半导体芯片(10)；和在半导体芯片(10)上形成的多个树脂突起(20)；和被与电极(14)电连接而成的具有在树脂突起(20)上形成的电连接部(32)的布线(30)。在面(15)的短边(17)的端部区域(18)内，树脂突起(20)形成沿与短边(17)交叉的方向延伸的形状。

Description

半导体装置
技术领域
本发明涉及一种半导体装置。
背景技术
作为半导体装置(例如，参考特开平2-272737号公报)，众所周知的是被装配于布线基板等上的电子模件。而且，半导体装置或布线基板受到因电子模件的工作环境的变化引起的温度变化、或热循环试验引起的温度变化等的影响，会产生热胀冷缩的现象。另外，在半导体装置和布线基板的热膨胀系数不同的情况下，可能导致在半导体装置和布线基板的界面上产生力。如果当该力变得过大时也能够防止半导体装置发生故障的话，就可以提供具有高可靠性的电子模件。
发明内容
本发明的目的在于，提供一种高可靠性的半导体装置。
(1)本发明的半导体装置包括：由多个电极构成且形成有所述电极的面形成长方形的半导体芯片；
在所述半导体芯片的所述面上形成的多个树脂突起；
与所述电极电连接而成，包括在所述树脂突起上形成的电连接部的布线，
在所述面的短边的端部区域内，所述树脂突起形成沿与所述短边交叉的方向延伸的形状。
根据本发明，可以使配置于端部区域的树脂突起不易变形。所以，将半导体装置安装到布线基板等上之后，即使在受到温度变化等的影响导致半导体装置产生膨胀收缩的情况下，也可以确保可靠的电连接性，从而提供高可靠性的半导体装置。
(2)在该半导体装置中，在所述端部区域内，所述树脂突起也可以形成为沿与所述短边垂直的方向延伸的形状。
(3)在该半导体装置中，在所述端部区域内，所述树脂突起也可以形成为沿从所述面的中央区域放射状地延伸的假想直线延伸的形状。
(4)在该半导体装置中，在所述端部区域内，也可以沿着所述短边排列形成沿与所述短边交叉的方向延伸的形状的多个所述树脂突起。
(5)在该半导体装置中，所述多个树脂突起也可以全部形成为沿与所述短边交叉的方向延伸的形状。
附图说明
图1(A)～图1(D)是用于说明适用了本发明的实施方式的半导体装置的图；
图2(A)及图2(B)是用于说明适用了本发明的实施方式的半导体装置的图；
图3是用于说明本发明的实施方式的半导体装置的图；
图4是用于说明本发明的实施方式的变形例的半导体装置的图；
图5是用于说明本发明的实施方式的变形例的半导体装置的图；
图6是用于说明本发明的实施方式的变形例的半导体装置的图。
图中：1…半导体装置，10…半导体芯片，12…集成电路，14…电极，16…钝化膜，17…短边，18…端部区域，19…长边，20…树脂突起，22…树脂突起，25…树脂突起，30…布线，32…电连接部，40…布线基板，42…基地基板，44…布线图案，100…假想直线。
具体实施方式
以下，参考图纸对对适用本发明的实施方式进行说明。但是，本发明并不局限于以下的实施方式。还有，本发明包括以下内容的自由组合。
图1(A)～图3所示为适用了本发明的实施方式的半导体装置的说明图。在此，图1(A)～图1(D)所示为适用了本发明的实施方式的半导体装置1。还有，图1(A)为半导体装置1的顶视图。但为了说明，在图1(A)中省略了布线30(电连接部32)。另外，图1(B)为图1(A)的一部分放大图。还有图1(C)为图1(B)的IC-IC线截面的一部分放大图，图1(D)为图1(B)的ID-ID线截面的一部分放大图。
如图1(A)～图1(D)所示，本实施方式的半导体装置包括半导体芯片10。半导体芯片10可以是例如硅芯片。也可以在半导体芯片10上形成集成电路12(参考图1(D))。不对集成电路12的构成做特别的限定，可以包括晶体管等主动元件，或者电阻、线圈、电容器等被动元件。
如图1(B)所示，在半导体芯片10上形成有多个电极14。而且，如图1(A)所示，形成有电极14的半导体芯片10的面15为长方形。面15也可以是半导体芯片10的主动面。电极14也可以避开中央部分而仅形成在周边部上。或者，电极14也可以面阵(area array)状地形成在面15上(包括中央部的区域上)。此时，电极可以多行多列地排列为格子状，也可以进行无规则排列。
电极14也可以与集成电路12进行电连接。或者，也可以包括没有与集成电路12电连接的导电体一起称为电极14。电极14也可以是半导体芯片的内部布线的一部分。电极14也可以由铝或铜等金属构成。如图1(C)及图1(D)所示，也可以在半导体芯片10的面15上形成钝化膜16，此时电极14也可以是从钝化膜16露出的区域。另外，钝化膜16既可以是例如SiO2或SiN等的无机绝缘膜，或者，也可以是聚酰亚胺树脂等的有机绝缘膜。
如图1(A)～图1(D)所示，本实施方式的半导体装置包括树脂突起20。树脂突起20形成在半导体芯片10上。树脂突起20也可以形成在钝化膜16上。树脂突起20也可以避开电极14(使之露出)而形成。
树脂突起20形成在形成有半导体芯片10的电极14的面(面15)上。树脂突起20也可以配置在面15上比电极14更外侧的区域内。树脂突起20的至少一部分，也可以配置在面15的短边17的端部区域18内。并且，所谓短边17的端部区域18也可以指短边17的周边的区域。所谓短边17的端部区域18也可以指例如面15内的将短边17作为一个边的正方形区域。或者，短边17的端部区域18也可以是指从面15的短边17起，与半导体芯片10的厚度相同宽度的区域。或者所谓短边17的端部区域18也可以是指比集成电路12的形成区域更外侧的区域。
如图1(A)及图1(B)所不，在面15的短边17的端部区域18内，树脂突起20形成为沿与短边17交叉的方向延伸的形状。在端部区域18内，树脂突起20也可以形成为沿与短边17直交的方向延伸的形状。此外，如图1(A)所示，在本实施方式的半导体装置中，在端部区域18内，也可以沿短边17排列形成与短边17交叉的方向延伸的形状的多个树脂突起20。此时，如图1(A)所示，在端部18内，多个树脂突起20既可以沿着短边17被排列为一列，也可以被排列为多列(未图示)。因此，因为可以扩大后述的电连接部32的可能形成区域，从而能够在不扩大半导体芯片10的外形的情况下确保多个连接点，并且可以提高配置电连接部32的自由度。
如图1(A)及图1(B)所示，本实施方式的半导体装置也可以包括形成在半导体芯片10的面15上的其它的树脂突起22。树脂突起22可以成为沿着面15的长边19延伸的形状。即，在本实施方式的半导体装置中，树脂突起22全部也可以成为沿与短边17交叉的方向延伸的形状。此外，如图1(A)所示，树脂突起22也可以沿着面15的长边19仅形成一个。但是，也可以沿着面15的长边19形成多个树脂突起(未图示)。此外，如图1(A)所示，树脂突起22也可以避开端部区域18而形成。但是，树脂突起22也可以形成为直到端部区域18内。即使在这种情况下也可以认为树脂突起在端部区域18内形成为沿与短边17交叉的方向延伸的形状。
树脂突起20、22的材料不做特别的限定，可以使用已经公开的任何一种材料。例如，树脂突起20、22可以由聚酰亚胺树脂、硅改性聚酰亚胺树脂、环氧树脂、硅改性环氧树脂、苯并环丁烯(BCB；benzocyclobutene)、聚苯并噁唑(PBO；polybenzoxazole)、酚醛树脂等树脂构成。
如图1(B)～图1(D)所示，本实施方式的半导体装置与电极14进行电连接而成，包括具有形成在树脂突起20上的电连接部32的布线30。例如电连接部32也可以指被从电极14上拉伸到树脂突起20上而成的布线30的一部分(与树脂突起20重复的区域)。而且，电连接部32也可以指在布线30中作为外部端子利用的部分。电连接部32也可以形成为沿着短边17延伸的形状。此时，电连接部32也可以形成为与树脂突起20直交地延伸的形状。此外，如图1(B)所不，也可以在一个的树脂突起20上只形成一个电连接部32。而且，电连接部32也可以配置为与端部区域18重复。
布线30(电连接部32)的构造和材料不做特别的限定。例如，布线30既可以形成为单层，也可以形成为多层。此时，布线30也可以包括由钛钨形成的第1层和由金形成的第2层(未图示)。
本实施方式的半导体装置1也可以具有以上的构成。根据半导体装置1，可以提供在安装时及安装后布线30不易产生损伤的具有高可靠性的半导体装置。以下对其效果进行说明。
对向布线基板安装半导体装置1的方法不做特别的限定，但参考图2(A)及图2(B)对其中一例进行说明。首先，对布线基板40进行说明。布线基板40可以包括基地基板42和布线图案44。基地基板42的材料不做特别的限定，可以是有机质或无机质的任何材料，也可以是由这些材料的复合构造构成。作为基地基板42，也可以由无机质材料形成。此时，基地基板42也可以是陶瓷基地基板或玻璃基地基板。当基地基板42为玻璃基地基板时，布线基板40可以是电子光学面板(液晶面板、电致发光面板等)的一部分。布线图案44可以由ITO(Indium Thin Oxide)、Cr、Al等的金属膜、金属化合物膜、或者它们的复合膜形成。此时，布线图案44可以与驱动液晶的电极(扫描电极、信号电极、对电极等)进行电连接。或者基地基板42也可以是也可以是聚脂(PET)组成的基地基板或者薄膜。或者，作为基地基板42也可以使用聚酰亚胺树脂组成的柔性基地基板。作为柔性基地基板也可以使用在FPC(FPC：Flexible Printed Circuit)或TAB(TAB：Tape Automated Bonding)技术中使用的卷带。此时，布线图案44可以由铜(Cu)、铬(Cr)、钛(Ti)、镍(Ni)、钛钨(Ti-W)中的任何一种层叠形成。
以下，对向布线基板40安装半导体装置1的工序进行说明。首先如图2(A)所示，将半导体装置1配置在布线基板40上，使半导体装置1的电连接部32和布线基板40的布线图案44相对而进行位置校准。
此时，可以通过未图示的夹具(焊头(bonding tool))固定半导体装置1。夹具中也可以内藏有加热器，通过加热器对半导体装置1(电连接部32)进行加热。此外，通过对半导体装置1进行加热，电连接部32也被加热，可以确实地对电连接部32和布线图案44进行电连接。
还有，在半导体装置1和布线基板40之间，设置有未图示的粘接剂。粘结剂例如可以使用薄膜状的粘接剂，或者糊状的粘接剂。也可以使用绝缘性的或树脂类的粘接剂。
其后，如图2(B)所示，将半导体装置1和布线基板40靠近，使电连接部32和布线图案44发生接触。如此，电连接部32和布线图案44之间产生电连接。在本工序中，也可以通过半导体芯片10和布线基板40挤压树脂突起20使之产生弹性变形。如此，在树脂突起20的弹力作用下，可以将电连接部32和布线图案44推挤到一起，因此可以制造出具有高可靠性的电气连接性能的电子模件。
此外，也可以在半导体装置1和布线基板40之间形成未图示的粘接层。通过粘接层固定半导体芯片10和布线基板40的间隔。即，可以通过粘接层使树脂突起20保持在弹性变形的状态。例如，通过在树脂突起20处于弹性变形的状态下形成粘接层，可以保持树脂突起20的弹性变形的状态。
也可以通过以上的工序，将半导体装置1安装到布线基板40上。而且，也可以经过检查工序等，制造图3所示的电子模件1000。电子模件1000可以是显示元件。显示元件也可以是例如液晶显示元件或电致发光(EL)显示元件。而且，半导体装置1(半导体芯片10)也可以是控制显示元件的驱动IC。
在上述的安装工序的过程中、或者安装工序后，可以使半导体装置1及布线基板40的尺寸发生变化。例如，像前面所说明的那样，在将半导体装置1安装到布线基板40上的工序中，在将半导体装置1搭载于布线基板40后，夹具供给的热量变没时，半导体装置1及布线基板40冷却收缩，外部尺寸变小。或者，由于安装后的工作环境的变化或用于检查而进行热循环试验时，会导致半导体装置1及布线基板40的尺寸发生变化。
然而，在半导体装置1中，树脂突起20形成在半导体芯片10之上。所以，树脂突起20的基端部随着半导体芯片10的尺寸变化而产生位置偏离。另外，树脂突起20的上端部通过电连接部32被挤压到布线基板40上。因此，树脂突起20的上端部随着布线基板40的尺寸变化(布线图案44的位置偏离)而产生位置偏离。总之，树脂突起20的基端部随着半导体芯片10产生位置偏离，上端部则随着布线基板40产生位置偏离。所以，当半导体装置1(半导体芯片10)和布线基板40(布线图案44)的尺寸变化率和尺寸变化方向不同时，可能造成树脂突起20承受一定的力。
而且，由于半导体芯片10呈长方形，尺寸变化会向短边17的端部区域18累积。所以，半导体芯片10的面15在短边17的端部区域18中，相对于中央区域尺寸变化较大。另外，半导体芯片10在短边17的端部区域18中，朝向沿着长边19的方向的尺寸变化量，比朝向沿着短边17的方向的尺寸变化量要大。因此，可以想象被配置在半导体芯片10的短边17的端部区域18上的树脂突起20，在与半导体芯片10的短边17交叉的方向上承受很大的力。
而且，向树脂突起20施加很大的力时，可能造成树脂突起20发生变形。根据半导体装置1，在树脂突起20上设置有电连接部32，或者布线30被形成为通过树脂突起20上。因此，当树脂突起20发生变形时，布线30或电连接部32受力，有损伤布线30或电连接部32的危险。
但是，根据半导体装置1，被配置在半导体芯片10的短边17的端部区域18上的树脂突起20，形成沿与短边17交叉的方向延伸的形状。即，树脂突起20形成即使受到来自与短边17交叉的方向上的力也不易变形的形状。因此，根据半导体装置1，即使在半导体芯片10呈长方形的情况下，形成在树脂突起20上的电连接部32(布线30)也难以受到损伤，可以提供高可靠性的半导体装置。
此外，在半导体装置1中，电连接部32(布线30)也可以形成为在树脂突起20上沿着短边17延伸的形状。如此，在半导体芯片10的端部区域18中，电连接部32相对于半导体芯片10的膨胀收缩方向变宽。所以，即使在半导体装置1产生膨胀收缩的情况下，在半导体芯片10的端部区域18中，电连接部32也不易受到损伤。尤其是在这种情况下，因为无须使布线30的宽度变大，而可以将电连接部32的外观上的幅度调宽，从而使布线30的走线变得容易。
(变形例)
本发明不局限于以上的实施方式，可以进行各种变形。以下对适用于本发明的实施方式的变形例的半导体装置进行说明。
如图4所示，在1个树脂突起20上，形成有多个电连接部32。如此，可以紧密地形成电连接部32，从而在不增大半导体芯片10(半导体装置1)的外形的情况下增加电连接部32的数量。此外，如图4所示，也可以将树脂突起20配置在比电极14更内侧的区域上。
在图5所示例中，在1个树脂突起20上，形成有多个电连接部32。而且，形成在1个树脂突起20上的多个电连接部32，被电连接在沿着该树脂突起20配列的多个电极14上。如此，可以将布线30设为一定的长度，所以能够提供可以高精度地传递信号的半导体装置。
在图6所示例中，半导体装置包括树脂突起25。在端部区域18内，树脂突起25行程沿着从面15的中央区域放射状地延伸的假想直线100延伸的形状。受到温度变化的影响，半导体芯片10会出现以中央区域为基点放射状地膨胀收缩的情况。根据本变形例，当半导体芯片10以中央区域为基点放射状地膨胀收缩时，可以更好地防止树脂突起产生变形。还有，此时电连接部32即可以形成沿着短边17延伸的形状，也可以形成为与树脂突起25直交延伸的形状。
还有，本发明并不局限于上述的实施方式，可以进行各种变形。例如，本发明包括实质上与实施方式中说明的构成相同的构成(例如，功能、方法及结果相同的构成，或者目的及效果相同的构成)。另外，本发明包括替换了在实施方式中进行了说明的构成的非本质部分的构成。另外，本发明包括与实施方式中说明的构成起到同样的作用和效果的构成，或者可以达成同一目的的构成。另外，本发明包括在实施方式中进行了说明的构成上附加了公开技术的构成。

Claims (5)

1.一种半导体装置，其特征在于，包括：
形成有多个电极而成，且形成有所述电极的面形成长方形的半导体芯片；
形成于所述半导体芯片的所述面上的多个树脂突起；
与所述电极电连接而成，且具有形成在所述树脂突起上的电连接部的布线，
并且，在所述面的短边的端部区域内，所述树脂突起形成沿着与所述短边交叉的方向延伸的形状。
2.根据权利要求1所述的半导体装置，其特征在于，在所述端部区域内，所述树脂突起形成沿着与所述短边正交的方向延伸的形状。
3.根据权利要求1所述的半导体装置，其特征在于，在所述端部区域内，所述树脂突起形成沿着从所述面的中央区域放射状地延伸的假想直线延伸的形状。
4.根据权利要求1～3中任一项所述的半导体装置，其特征在于，在所述端部区域内，形成沿着与所述短边交叉的方向延伸的形状的多个所述树脂突起沿着所述短边排列。
5.根据权利要求1～4中任一项所述的半导体装置，其特征在于，所述多个树脂突起全部形成沿着与所述短边交叉的方向延伸的形状。
CNA2006101432370A 2005-11-07 2006-11-01 半导体装置 Pending CN1964032A (zh)

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