TW201019048A - Underlayer coating film forming composition for lithography comprising fluorene-containing resin - Google Patents

Underlayer coating film forming composition for lithography comprising fluorene-containing resin Download PDF

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Publication number
TW201019048A
TW201019048A TW98134138A TW98134138A TW201019048A TW 201019048 A TW201019048 A TW 201019048A TW 98134138 A TW98134138 A TW 98134138A TW 98134138 A TW98134138 A TW 98134138A TW 201019048 A TW201019048 A TW 201019048A
Authority
TW
Taiwan
Prior art keywords
photoresist
underlayer film
film
integer
forming
Prior art date
Application number
TW98134138A
Other languages
English (en)
Chinese (zh)
Inventor
Tetsuya Shinjo
Jun Sun
Keisuke Hashimoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201019048A publication Critical patent/TW201019048A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
TW98134138A 2008-10-10 2009-10-08 Underlayer coating film forming composition for lithography comprising fluorene-containing resin TW201019048A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008263725 2008-10-10

Publications (1)

Publication Number Publication Date
TW201019048A true TW201019048A (en) 2010-05-16

Family

ID=42100576

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98134138A TW201019048A (en) 2008-10-10 2009-10-08 Underlayer coating film forming composition for lithography comprising fluorene-containing resin

Country Status (4)

Country Link
JP (1) JPWO2010041626A1 (ja)
KR (1) KR20110086812A (ja)
TW (1) TW201019048A (ja)
WO (1) WO2010041626A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
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TWI414890B (zh) * 2008-10-20 2013-11-11 Shinetsu Chemical Co 光阻下層膜之形成方法、使用其之圖型形成方法、及光阻下層膜材料
CN107077071A (zh) * 2014-11-04 2017-08-18 日产化学工业株式会社 包含具有亚芳基的聚合物的抗蚀剂下层膜形成用组合物
TWI748087B (zh) * 2017-04-25 2021-12-01 日商日產化學工業股份有限公司 使用茀化合物之阻劑下層膜形成組成物

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JP5385006B2 (ja) * 2009-05-25 2014-01-08 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
JP2013137334A (ja) * 2010-04-21 2013-07-11 Nissan Chem Ind Ltd ポリイミド構造を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
JP5229278B2 (ja) * 2010-06-21 2013-07-03 信越化学工業株式会社 ナフタレン誘導体、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法
JP5556773B2 (ja) * 2010-09-10 2014-07-23 信越化学工業株式会社 ナフタレン誘導体及びその製造方法、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法
US20130189533A1 (en) 2010-10-14 2013-07-25 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition for lithography containing polyether structure-containing resin
EP2650729A4 (en) 2010-12-09 2014-07-16 Nissan Chemical Ind Ltd COMPOSITION FOR FORMING LACQUER COATING WITH A CARBAZOLE NOVOLAC HYDROXYL GROUP-CONTAINING RESIN
KR20140050046A (ko) * 2011-08-04 2014-04-28 닛산 가가쿠 고교 가부시키 가이샤 축합계 폴리머를 가지는 euv 리소그래피용 레지스트 하층막 형성조성물
CN104024940B (zh) * 2011-12-30 2018-05-01 第一毛织株式会社 用于硬掩模组合物的单体、包含该单体的硬掩模组合物、以及使用该硬掩模组合物形成图案的方法
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
WO2014129582A1 (ja) * 2013-02-25 2014-08-28 日産化学工業株式会社 水酸基を有するアリールスルホン酸塩含有レジスト下層膜形成組成物
KR101655394B1 (ko) 2013-04-25 2016-09-07 제일모직 주식회사 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR102229657B1 (ko) * 2013-05-13 2021-03-18 닛산 가가쿠 가부시키가이샤 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물
CN104253024B (zh) 2013-06-27 2017-07-28 第一毛织株式会社 硬掩模组合物、使用其形成图案的方法以及包括该图案的半导体集成电路装置
KR101754901B1 (ko) 2014-05-16 2017-07-06 제일모직 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns
CN109075060B (zh) * 2016-03-08 2024-03-29 日产化学株式会社 具有iii族氮化物系化合物层的半导体基板的制造方法
KR102419523B1 (ko) * 2016-08-08 2022-07-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법
KR101984867B1 (ko) * 2017-11-28 2019-06-03 로움하이텍 주식회사 플루오렌 화합물을 포함하는 반도체 제조용 레지스트 하층막 조성물
JP7465679B2 (ja) * 2020-03-05 2024-04-11 信越化学工業株式会社 塗布型有機膜形成用組成物、パターン形成方法、重合体および重合体の製造方法
JPWO2022034831A1 (ja) * 2020-08-14 2022-02-17

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4355943B2 (ja) * 2003-10-03 2009-11-04 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP5192641B2 (ja) * 2005-10-07 2013-05-08 大阪瓦斯株式会社 フルオレン骨格を有する化合物およびその製造方法
JP4659678B2 (ja) * 2005-12-27 2011-03-30 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP4778535B2 (ja) * 2007-04-06 2011-09-21 大阪瓦斯株式会社 フェノール樹脂およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI414890B (zh) * 2008-10-20 2013-11-11 Shinetsu Chemical Co 光阻下層膜之形成方法、使用其之圖型形成方法、及光阻下層膜材料
CN107077071A (zh) * 2014-11-04 2017-08-18 日产化学工业株式会社 包含具有亚芳基的聚合物的抗蚀剂下层膜形成用组合物
TWI687771B (zh) * 2014-11-04 2020-03-11 日商日產化學工業股份有限公司 包含具伸芳基之聚合物之光阻下層膜形成組成物
CN107077071B (zh) * 2014-11-04 2020-10-02 日产化学工业株式会社 包含具有亚芳基的聚合物的抗蚀剂下层膜形成用组合物
TWI748087B (zh) * 2017-04-25 2021-12-01 日商日產化學工業股份有限公司 使用茀化合物之阻劑下層膜形成組成物

Also Published As

Publication number Publication date
WO2010041626A1 (ja) 2010-04-15
JPWO2010041626A1 (ja) 2012-03-08
KR20110086812A (ko) 2011-08-01

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