KR20110086812A - 플루오렌을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 - Google Patents

플루오렌을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 Download PDF

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KR20110086812A
KR20110086812A KR1020117010173A KR20117010173A KR20110086812A KR 20110086812 A KR20110086812 A KR 20110086812A KR 1020117010173 A KR1020117010173 A KR 1020117010173A KR 20117010173 A KR20117010173 A KR 20117010173A KR 20110086812 A KR20110086812 A KR 20110086812A
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KR
South Korea
Prior art keywords
underlayer film
group
resist
resist underlayer
integer
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KR1020117010173A
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English (en)
Korean (ko)
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테츠야 신조
준 선
케이스케 하시모토
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닛산 가가쿠 고교 가부시키 가이샤
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Publication of KR20110086812A publication Critical patent/KR20110086812A/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C243/00—Compounds containing chains of nitrogen atoms singly-bound to each other, e.g. hydrazines, triazanes
    • C07C243/40—Hydrazines having nitrogen atoms of hydrazine groups being quaternised
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G10/00—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only
    • C08G10/02—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or halogenated aromatic hydrocarbons only of aldehydes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/423—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof containing an atom other than oxygen belonging to a functional groups to C08G59/42, carbon and hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/092—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by backside coating or layers, by lubricating-slip layers or means, by oxygen barrier layers or by stripping-release layers or means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
KR1020117010173A 2008-10-10 2009-10-05 플루오렌을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물 KR20110086812A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-263725 2008-10-10
JP2008263725 2008-10-10

Publications (1)

Publication Number Publication Date
KR20110086812A true KR20110086812A (ko) 2011-08-01

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KR1020117010173A KR20110086812A (ko) 2008-10-10 2009-10-05 플루오렌을 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물

Country Status (4)

Country Link
JP (1) JPWO2010041626A1 (ja)
KR (1) KR20110086812A (ja)
TW (1) TW201019048A (ja)
WO (1) WO2010041626A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140050046A (ko) * 2011-08-04 2014-04-28 닛산 가가쿠 고교 가부시키 가이샤 축합계 폴리머를 가지는 euv 리소그래피용 레지스트 하층막 형성조성물
KR20150123221A (ko) * 2013-02-25 2015-11-03 닛산 가가쿠 고교 가부시키 가이샤 수산기를 갖는 아릴설폰산염 함유 레지스트 하층막 형성 조성물
US9195136B2 (en) 2013-04-25 2015-11-24 Cheil Industries, Inc. Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns
KR20160006663A (ko) * 2013-05-13 2016-01-19 닛산 가가쿠 고교 가부시키 가이샤 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물
US9665003B2 (en) 2013-06-27 2017-05-30 Cheil Industries, Inc. Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns
KR20170081166A (ko) * 2014-11-04 2017-07-11 닛산 가가쿠 고교 가부시키 가이샤 아릴렌기를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns
US10018914B2 (en) 2014-05-16 2018-07-10 Samsung Sdi Co., Ltd. Hardmask composition and method of forming patterns using the hardmask composition
KR20190039472A (ko) * 2016-08-08 2019-04-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법
KR101984867B1 (ko) * 2017-11-28 2019-06-03 로움하이텍 주식회사 플루오렌 화합물을 포함하는 반도체 제조용 레지스트 하층막 조성물
KR20190141700A (ko) * 2017-04-25 2019-12-24 닛산 가가쿠 가부시키가이샤 플루오렌 화합물을 이용한 레지스트 하층막 형성 조성물
KR20210113078A (ko) * 2020-03-05 2021-09-15 신에쓰 가가꾸 고교 가부시끼가이샤 도포형 유기막 형성용 조성물, 패턴 형성 방법, 중합체 및 중합체의 제조 방법

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JP5336306B2 (ja) 2008-10-20 2013-11-06 信越化学工業株式会社 レジスト下層膜形成方法、これを用いたパターン形成方法、及びレジスト下層膜材料
JP5385006B2 (ja) * 2009-05-25 2014-01-08 信越化学工業株式会社 レジスト下層膜材料及びこれを用いたパターン形成方法
JP2013137334A (ja) * 2010-04-21 2013-07-11 Nissan Chem Ind Ltd ポリイミド構造を含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物
JP5229278B2 (ja) * 2010-06-21 2013-07-03 信越化学工業株式会社 ナフタレン誘導体、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法
JP5556773B2 (ja) * 2010-09-10 2014-07-23 信越化学工業株式会社 ナフタレン誘導体及びその製造方法、レジスト下層膜材料、レジスト下層膜形成方法及びパターン形成方法
KR101866828B1 (ko) 2010-10-14 2018-06-14 닛산 가가쿠 고교 가부시키 가이샤 폴리에테르 구조를 함유하는 수지를 포함하는 리소그래피용 레지스트 하층막 형성 조성물
JP5867732B2 (ja) 2010-12-09 2016-02-24 日産化学工業株式会社 水酸基含有カルバゾールノボラック樹脂を含むレジスト下層膜形成組成物
WO2013100409A1 (ko) * 2011-12-30 2013-07-04 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
JP5894106B2 (ja) * 2012-06-18 2016-03-23 信越化学工業株式会社 レジスト下層膜形成用化合物、これを用いたレジスト下層膜材料、レジスト下層膜形成方法、パターン形成方法
WO2017154924A1 (ja) * 2016-03-08 2017-09-14 日産化学工業株式会社 Ｉｉｉ族窒化物系化合物層を有する半導体基板の製造方法
JPWO2022034831A1 (ja) * 2020-08-14 2022-02-17

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JP4355943B2 (ja) * 2003-10-03 2009-11-04 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP5192641B2 (ja) * 2005-10-07 2013-05-08 大阪瓦斯株式会社 フルオレン骨格を有する化合物およびその製造方法
JP4659678B2 (ja) * 2005-12-27 2011-03-30 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
JP4778535B2 (ja) * 2007-04-06 2011-09-21 大阪瓦斯株式会社 フェノール樹脂およびその製造方法

Cited By (14)

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KR20180118810A (ko) * 2011-08-04 2018-10-31 닛산 가가쿠 가부시키가이샤 축합계 폴리머를 가지는 euv 리소그래피용 레지스트 하층막 형성조성물
KR20140050046A (ko) * 2011-08-04 2014-04-28 닛산 가가쿠 고교 가부시키 가이샤 축합계 폴리머를 가지는 euv 리소그래피용 레지스트 하층막 형성조성물
KR20150123221A (ko) * 2013-02-25 2015-11-03 닛산 가가쿠 고교 가부시키 가이샤 수산기를 갖는 아릴설폰산염 함유 레지스트 하층막 형성 조성물
US9195136B2 (en) 2013-04-25 2015-11-24 Cheil Industries, Inc. Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns
KR20160006663A (ko) * 2013-05-13 2016-01-19 닛산 가가쿠 고교 가부시키 가이샤 비스페놀알데히드를 이용한 노볼락 수지 함유 레지스트 하층막 형성 조성물
US9665003B2 (en) 2013-06-27 2017-05-30 Cheil Industries, Inc. Hardmask composition, method of forming patterns using the hardmask composition and semiconductor integrated circuit device including the patterns
US10018914B2 (en) 2014-05-16 2018-07-10 Samsung Sdi Co., Ltd. Hardmask composition and method of forming patterns using the hardmask composition
KR20170081166A (ko) * 2014-11-04 2017-07-11 닛산 가가쿠 고교 가부시키 가이샤 아릴렌기를 갖는 폴리머를 포함하는 레지스트 하층막 형성 조성물
US9908990B2 (en) 2015-04-17 2018-03-06 Samsung Sdi Co., Ltd. Organic layer composition, organic layer, and method of forming patterns
KR20190039472A (ko) * 2016-08-08 2019-04-12 닛산 가가쿠 가부시키가이샤 광경화성 조성물 및 반도체장치의 제조방법
US11681223B2 (en) 2016-08-08 2023-06-20 Nissan Chemical Corporation Photocurable composition and method for producing semiconductor device
KR20190141700A (ko) * 2017-04-25 2019-12-24 닛산 가가쿠 가부시키가이샤 플루오렌 화합물을 이용한 레지스트 하층막 형성 조성물
KR101984867B1 (ko) * 2017-11-28 2019-06-03 로움하이텍 주식회사 플루오렌 화합물을 포함하는 반도체 제조용 레지스트 하층막 조성물
KR20210113078A (ko) * 2020-03-05 2021-09-15 신에쓰 가가꾸 고교 가부시끼가이샤 도포형 유기막 형성용 조성물, 패턴 형성 방법, 중합체 및 중합체의 제조 방법

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JPWO2010041626A1 (ja) 2012-03-08
WO2010041626A1 (ja) 2010-04-15
TW201019048A (en) 2010-05-16

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