TW201006576A - Method for treatment of surfaces, emitter for this method and irradiation system with this emitter - Google Patents

Method for treatment of surfaces, emitter for this method and irradiation system with this emitter Download PDF

Info

Publication number
TW201006576A
TW201006576A TW098118347A TW98118347A TW201006576A TW 201006576 A TW201006576 A TW 201006576A TW 098118347 A TW098118347 A TW 098118347A TW 98118347 A TW98118347 A TW 98118347A TW 201006576 A TW201006576 A TW 201006576A
Authority
TW
Taiwan
Prior art keywords
lamp
discharge
vuv
processing chamber
discharge tube
Prior art date
Application number
TW098118347A
Other languages
English (en)
Inventor
Axel Hombach
Siegmar Rudakowski
Original Assignee
Osram Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Gmbh filed Critical Osram Gmbh
Publication of TW201006576A publication Critical patent/TW201006576A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J65/00Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
    • H01J65/04Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
    • H01J65/042Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
    • H01J65/046Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • B08B7/0057Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/50Means forming part of the tube or lamps for the purpose of providing electrical connection to it
    • H01J5/54Means forming part of the tube or lamps for the purpose of providing electrical connection to it supported by a separate part, e.g. base
    • H01J5/56Shape of the separate part

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Cleaning In General (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)

Description

201006576 六、發明說明: 【發明所屬之技術領域】 本發明涉及一種藉助於紫外線(UV)或真空紫外線 (VUV)輻射來處理表面的方法。即,使用150奈米至350奈 米(UV)或150奈米至200奈米(VUV)之範圍的電磁輻射來處 理表面,例如,淨化、改性及/或活化該表面。例如,以本 發明的方法來處理表面時,在製造液晶顯示器(LCD)時須將 玻璃表面上的有機污染物去除,或將半導體製程中例如晶 φ 圓和其它基板上的光漆去除或使表面的沾濕性獲得改良。 上述方法另外使用一種輻射器,其發出UV/VUV光譜 範圍中的電磁輻射。介電質阻障式放電燈特別適用於此 處,其是一種特別有效的UV/VUV-輻射器,特別是當其以 US 5 604 4 1 0中所述的脈波式操作方法來操作時》 【先前技術】 文件WO 03/098653中揭示一種介電質阻障式放電燈, 其在真空室中可用於藉由UV/VUV-輻射來進行的處理方法 Φ 中,例如,可用於表面淨化和活化、光分解、臭氧產生、 飲水淨化、金屬化和UV固化等方法中。UV/VUV-輻射是由 氙-準分子(Xe,)發出,其波長大約是172奈米且在介電質 阻障式放電燈中在由石英玻璃所構成的放電管中是由200 毫巴之氙所產生。在管形的放電管的內部中,螺旋形式的 內電極在軸向中配置著。在放電管的外側上以平行於內電 極的方式而施加六個條形的電極。該內電極在該放電管的 一末端上經由一密封區而由內部氣密地向外延伸。該放電 管的另一末端以截短的方式而密封著且設有一已熔合的泵 -4- 201006576 尖端,該內電極之遠離密封區之末端固定在正面側的泵尖 端上。 在文件US 2006/180173 A1中例如揭示一種由半導體去 除有機材料(例如,光漆)之方法。於此,一以氙來塡入的 介電質阻障式放電燈安裝至一種含氧的負壓大氣的處理室 中。由該燈所發出的波長大約是172奈米之VUV-輻射在該 含氧的大氣中產生臭氧以及經活化的氧。 【發明内容】 〇 本發明的目的是提供一種較佳的表面處理方法,特別 是對表面進行淨化、改性及/或活化。本發明的另一觀點是 提供一種適用於此方法的 UV/VUV-輻射器以及具有此 UV/VUV-輻射器之照射系統。 上述目的藉由一種表面處理方法來達成,特別是藉助 於一種UV/VUV-輻射器而在一處理室的內部中對一種物件 進行淨化、改性及/或活化,其中該UV/VUV-輻射器具有一 輻射管,其伸入至該處理室的內部中且上述方法包括以下 ® 各步驟: •施加該物件,其表面將在該處理室中被處理,特別是 被淨化、改性及/或活化, -藉由驅動該UV/VUV-輻射器而產生UV/VUV-輻射,其 中此輻射由該輻射管之可透過該UV/VUV-輻射之壁而到達 該處理室之內部中, 此方法之特徵爲以下的另一步驟:在該輻射管之外壁 之至少一部分之區域中產生氣體放電。 此外,就適合用來進行本發明的方法之UV/VUV-輻射 201006576 器而言,依據本發明申請專利範圍獨立項第8項而主張一 種介電質阻障式放電燈’。最後,本發明申請專利範圍獨立 項第16項主張一種用來進行本發明的方法之照射系統,其 以介電質阻障式放電燈作爲UV/VUV-輻射器以進行本方 法。 特別有利的佈置描述在申請專利範圍各別的附屬項 中ο 所主張的方法亦包括裝置的特徵,且所主張的裝置亦 Φ 包括方法的特徵。因此.,此二種特徵以下不再嚴格區分而 是互相組合來說明。 本發明的方法之基本構想在於,不只使用UV/VUV-輻 射器之輻射來進行處理,特別是用於基板表面之淨化、改 性及/或活化,而且另外在該UV/VUV-輻射器之放電管之外 壁的至少一部分之區域(即,靠近基板處)中產生一種放電 現象。本發明人已發現:基板表面之處理作用(特別是淨 化、改性或活化)已大大地改善。在未決定理論上的意義 Φ 下,目前是以藉由另外在該處理室中的放電所產生的電 子、離子、基、及介(meta)穩定物質/或化學反應物質來提 供一種貢獻作爲開始。 相對於藉由電漿飩刻來進行的傳統之表面淨化而言, 本發明的方法另外具有以下的優點,即:介電質阻障式放 電燈中產生UV/VUV-輻射用之放電現象是與該處理室的大 氣中的其它放電現象相隔開。因此,該UV/VUV-輻射器的 內部中使放電最佳化所需的自由度是與該處理室內部中的 其它放電無關。此外,產生該UV/VUV-輻射用的放電現象 201006576 不會受到該處理室之大氣之氣體成份或待處理(特別是待 淨化)的基板之污染物的不良影響。 本發明的方法較佳是使用一種介電質阻障式放電燈作 爲UV/VUV-輻射器,其管形的放電管伸入至該處理室中。 管形的放電管中,放電媒體氣密地封閉著。因此,爲了使 UV/VUV-輻射產生時有儘可能高的效率或功率,須適當地 選取介電質阻障式放電之放電媒體所需的氣體(例如,氙) 以及氣體壓力,例如,100毫巴或更大。 • 反之,上述之其它放電現象在該放電管之外壁之至少 一部分的區域中被隔開,特別是被局限於該放電管之外壁 的表面上,即,上述之其它放電現象在每種情況下都是在 該處理室之低壓大氣中產生且因此至少是在待處理的基板 之附近產生。依據該基板及其污染物或已進行的處理之類 型,該處理室之大氣可包含氧、氫、氬、SF*、NH3、鹵素 或其化合物中的一種或多種,該處理室之總壓力通常是在 0.01毫巴至20毫巴之範圍中。特別是藉由該UV/VUV-輻射 ♦ 器之放電管內部中的放電媒體(一方面)以及該處理室中的 大氣壓力(另一方面)之可能存在的不同壓力範圍,但亦可 藉由適當的電性上的設計以及UV/VUV-輻射器之操作方 式,以便在放電管的外側上產生另一種放電,特別是輝光 放電。其它細節可參考以下的描述和實施例。 在一實施形式中,在管形的放電管內部中在軸向中配 置一種長形(較佳是螺旋形)的內電極。此內電極在該放電 管之第一末端上經由一密封區而氣密地向外延伸。在該放 電管的外側上配置至少一長形(例如,條形)的外電極,其 201006576 由內電極之密封區之末端開始平行於管形放電管之縱軸而 延伸。在遠離該密封區之另一末端上,該放電管之正側形 成視窗區段,其用來透過操作時所產生的UV/VUV-輻射。 另一種放電較佳是產生於該視窗區段之外側的區域中。爲 了此一目的,則當正側的視窗區段以平坦方式或以圓頂方 式來形成時是有利的。於是,經由視窗區段而入射的 UV/VUV-輻射可受到最少的干擾。因此,在製造該燈時通 常所需要的泵桿亦可配置在管形的放電管之周圍的區域中 Φ 或配置在該放電管之遠離正側之視窗區段之末端的區域 中。此外,該放電管形式與適當形式的電極在該視窗區段 之外側之區域中可產生另一種放電,較佳是輝光放電。於 是,當至少一長形的外電極較佳是在該正側的視窗區段之 前的大約3至10毫米處終止時是有利的。內電極之正側端 至該正側的視窗區段之距離較佳是等於或小於至少一外電 極之相對應的距離。依據目前的情況,內電極的場反向放 大因數只在該視窗區段之外壁上造成足夠強的放電現象。 另一方式是,通常是金屬製的處理室亦可作爲外電 極。於是,該介電質阻障式放電燈之放電管之外壁上的長 形的外電極可省略。 此外,當該管形的放電管之長度與直徑之比最多是2: 1時,則就UV/VUV-輻射和上述另一放電現象之間的最佳 調配而言是有利的。由於介電質阻障式放電是在徑向中由 軸向的內電極而在向該外電極的方向中被點燃,則該放電 管之直徑應由介電質阻障式放電之雙倍的點擊寬度來決 定。另一方面,該介電質阻障式放電之UV/VUV-輻射效率 201006576 是與點擊寬度或電壓在點擊時所需的大小有關。因此,該 放電管的直徑只可在某一限度內改變而不必考慮UV/VUV-輻射效率之劣化。一種太小的直徑和太小的點擊寬度另外 會造成足夠大的UV/VUV-輻射功率之負載。適當的長度-直徑比因此可藉由該放電管之未太大的長度來調整。放電 管的長度因此有一定的範圍,此範圍內該內電極和外電極 互相面對著;即,在該放電管的縱向區段內在該燈操作時 可使介電質阻障式放電現象被點燃。 Φ 本發明以下將依據多個實施例來描述。 【實施方式】 各圖中相同或作用相同的元件設有相同的參考符號。 第la圖和第lb圖顯示本發明之介電質阻障式放電燈1 之一實施例之側視圖和正面圖。介電質阻障式放電燈1在 本發明的表面處理方法中係作用成UV/VUV-輻射器。此燈 1具有管形之放電管2(其橫切面爲圓形),其具有大約45 毫米之直徑且由石英玻璃構成。此燈1在一末端上具有管 ® 形的由鋁構成之插座3。放電管2由插座3突出一種大約 60毫米的長度。插座3本身由大約90毫米長的插座套筒4 所構成,其上連接著一凸緣5。藉助於此一凸緣5將該燈1 氣密地安裝至處理室中(請參閱第3圖)。在該燈1電性連 接至一供電裝置(未顯示)時,該凸緣5在一端上具有一襯 套6。該凸緣5之另一端上,該放電管2具有一平坦的區段 7,其用作成視窗以使操作時該放電管中所產生的UV/VUV-輻射可不受干擾地透過。該平坦的視窗區段7經由一管形 彎曲的過渡區段8而轉變成該放電管2之管形的區段9。由 201006576 於該過渡區段8較狹窄,則該放電管2之整個直徑幾乎可 用作該視窗區段7之平坦區域》—種在該放電管2抽空之 後且在大約100毫巴之塡充壓力下以氙氣塡入而熔合的泵 桿10在側視圖中是配置在該放電管2之管形區段9上的過 渡區段8之下方且在此種燈中該泵桿10通常不是在正側 上。另一方式是,該泵桿10亦可配置在放電管之插座側的 末端上。在上述二種情況下,可使正側之視窗區段7未受 到光學上的干擾。 在放電管2之外側上配置6個條形的由鋁條構成之外 電極lla-llf,其平行於燈軸之寬度爲4毫米。該些外電極 11 a-Ilf在插座側的末端上經由插座套筒4而與襯套6相連 接(未顯示)。外電極lla-llf之正側的末端藉由環形之電極 條12而互相連接或一起固定著。外電極11 a-Ilf或正確而 言是連接該些外電極末端的環形電極條12終止於該平坦 之視窗區段7之前的大約10毫米的距離Α»處。由於該些 外電極lla-llf終止於插座邊緣下方大約10毫米處,則該 Φ 放電管之長度-直徑比大約是60毫米:45毫米,即,大約 是 1.3 : 1 。 另一方式是,外電極亦可藉由導電糊而安裝(例如,壓 印)成線形的電極軌。於是,在正側的末端上亦可不需環形 的電極條。 爲了說明該燈1在第la,lb圖中不可看見的其它特 徵,以下將參考第2圖來說明,第2圖顯示該燈1無插座 時的側視圖。在管形的放電管2之內部中在軸向上配置一 種螺旋形的內電極13。此處須指出,外電極原則上亦可形 -10- 201006576 成螺旋狀且所靥的內電極可形成軸向配置的直線狀導線或 棒。此時重要的只在於,依據上述US 5 604 410在以脈波 來操作的方式中須形成一種在DE 19636 965 A1第5c圖中 已揭示的放電結構。螺旋形的內電極13由直徑大約1毫米 的金屬線所構成。電極螺旋線13之直徑大約是10毫米、 節距是13毫米。螺旋形式的內電極13在該視窗區段7之 前的大約5毫米的距離Ai處終止於該放電管2之正側的末 端。該放電管2之另一端(HP,燈管側)上,該內電極13經 φ 由一以箔墊圈來形成的密封區14而氣密地向外延伸且以 銷形的外部電流導線15的形式而終止於該處。該外部電流 導線15在安裝該插座3時須與該襯套6相連接(未顯示)。 第2圖中未顯示的條形的外電極lla-llf如上所述是與金屬 的插座套筒4相連接且爲了安全之故而定位在接地電位 處。一玻璃管配件16設置在放電管2之燈腳側的末端上, 該玻璃管配件16在安裝該插座時藉由傳統的墊圈而與插 座套筒4之內側氣密地相連接。此種方式的優點以下將參 • 考第3圖來說明。 第3圖顯示該處理室17之放大圖,其中安裝著第la,lb 圖和第2圖中所示的燈1。該處理室17具有一開口,燈1 之放電管2經由此一開口而伸入至該處理室17中。此開口 藉由一種0-環墊圈18而由燈插座3之凸緣5來氣密地密封 著。此外,在放電管2之玻璃管配件16和插座套筒4內側 之間藉由上述的墊圈,則可使該玻璃管配件16之內部中延 伸的電流導線15不會承受到該處理室之負壓下的大氣,且 因此不會產生不期望的寄生放電。反之,該電流導線15藉 •11- 201006576 由該玻璃管配件16、插座套筒4和介於此二者之間的墊圈 而氣密地與該處理室內部中的低壓大氣相隔開而處於正常 的環境條件下。藉由該玻璃管配件和插座來形成.氣體密封 之其它細節可參閱上述文件 WO 03/0 98653»該處理室17 在0.1毫巴的壓力下以一種Ar/H2之混合物來塡充。爲了簡 單之故,該處理室之抽成真空或進行塡充時所用的泵-和氣 體系統未顯示於此處。同樣未顯.示的是存在於該處理室中 的例如矽基板,其表面應被處理,例如,應被淨化、改性 φ 及/或活化。基板至該燈的正面7之距離典型上是1毫米至 1厘米。該燈1經由襯套6而與供電裝置相連接(未顯示), 該供電裝置提供大約5仟伏的高壓脈波,其具有100奈秒 (ns)的脈波寬度,各高壓脈波藉由20微秒(μ〇的中斷時間 而互相隔開。所提供的電功率大約是10瓦。因此,可驅動 該放電管2內部的介電質阻障式放電且另外在該處理室17 中在該燈1之視窗區段7之前的區域中產生一種輝光放電 (未顯示),其在本發明中與由介電質阻障式放電所產生的 • UV/VUV-輻射一起用來對加入至該處理室17中的材料(未 顯示)的表面進行淨化、改性或活化。 該處理室17之通常由不銹鋼所構成的壁由於安全上 的原因而設定在接地電位,這些壁亦可用作該燈1之外電 極。於是可使其它配置在放電管2之外側上的條形的外電 極lla-llf省略(未顯示)。情況需要時只需分別調整該燈1 之處理室17和放電管2中的內壓。於是,在操作時該放電 管2中和該處理室之內部中較佳是直接在該視窗區段7之 前可使一種放電現象被點燃。此外,亦可取代該處理室而 -12- • 201006576 設有一(輔助)電極以作爲外電極’例如,可設有—種向內 伸入至該處理室中之金屬棒或亦可設有一種用於待處理之 基板的金屬載體。 ^ 【圖式簡單說明】 第1 a圖顯示本發明之介電質阻障式放電燈之側視圖, 其具有插座。 第lb圖顯示第la圖之燈的正面圖。 第2圖顯示該第la圖之燈在無插座時的側視圖。 ® 第3圖顯示一處理室之部分切面圖,第1圖之燈安裝 在該處理室中。 【主要元件符號說明】 1 阻障式放電燈 2 放電管 3 插座 4 插座套筒 5 凸緣 6 襯套 7 區段 8 過渡區段 9 區段 10 泵桿 1 la-1 If 外電極 12 電極條 13 內電極 -13- 201006576 14 密封區 15 外部電流導線 16 玻璃管配件 17 處理室 18 0-環墊圈 Aa 距離 Ai 距離
-14

Claims (1)

  1. 201006576 七、申請專利範圍: 1. 一種處理室(17)內部中的物件之表面處理方法,特別是表 面之淨化、改性及/或活化,其藉助於UV/VUV-輻射器(1) 來進行, -該UV/VUV-輻射器(1)具有一輻射管(2),其向內伸入 至該處理室(17)之內部中, 該方法包括以下步驟: -施加該物件,其表面將在該處理室(17)中被處理,特 φ 別是被淨化、改性及/或活化, -藉由驅動該 UV/VUV-輻射器(1)而產生 UV/VUV-輻 射,其中此輻射經由該輻射管(2)之該UV/VUV-輻射可透 過之壁而到達該處理室(17)之內部中, 該方法之特徵爲以下的另一步驟:在該輻射管(2)之外 壁之至少一部分(7)之區域中產生一種氣體放電。 2. 如申請專利範圍第1項之方法,其中該處理室(17)中在總 壓力爲0.01毫巴至20毫巴之範圍內以一種氣體或氣體 ❿ 混合物來塡入。 3. 如申請專利範圍第2項之方法,其中該氣體或氣體混合 物含有以下的成份之一種或多種:氧、氫、氬、SF6、NH3、 鹵素或其化合物。 4. 如申請專利範圍第1至3項中任一項之方法,其中該輻 射管(2)是管形的且該氣體放電是在該輻射管之伸入至 該處理室(17)中而封閉的末端(7)之外部區中產生。 5. 如申請專利範圍第1至4項中任一項之方法,其中須設 計該UV/VUV-輻射器(1)且進行操作,使該輻射管之外部 -15- .201006576 的放電成爲一種輝光放電。 6. 如申請專利範圍第1至5項中任一項之方法,其中該 UV/VUV-輻射器(1)是一種介電質阻障式放電燈。 7. 如申請專利範圍第6項之方法,其中該放電燈(1)以一種 脈波式高壓來操作。 8. —種介電質阻障式放電燈(1),其適合作用成如申請專利 範圍第1至7項中任一項之表面處理方法用之UV/VUV-輻射器,包括: # -管形的放電管(2),其在二端上氣密地被密封著且因此 形成一放電空間,拜以放電介質來塡入, -長形的內電極(13),其配置在該放電管(2)的內部中, 且在該放電管之第一末端上經由一密封區(14)而氣密地 向外延伸, -外電極(lla-llf),其配置在該放電管(2)的外部, 其特徵爲: -該放電管的第二末端形成正側之視窗區段(7),其用來 • 使操作時所產生的UV/VUV-輻射透過。 9. 如申請專利範圍第8項之燈,其中正側的視窗區段(7)是 平坦的形狀或圓頂形的形狀。 10. 如申請專利範圍第8或9項之燈,其中該管形的放電管 (2)之長度對直徑之比最多是2: 1。 11. 如申請專利範圍第8至10項中任一項之燈’其中該外電 極形成至少一配置在該放電管(2)之外側上的長形電極 (lla-llf),其由該內電極的密封區開始平行於該管形的 放電管(2)之縱軸而延伸且終止於正側的視窗區段(7)之 -16 - 201006576 > 刖° 12.如申請專利範圍第11項之燈,其中至少一長形的外電極 (lla-llf)終止於該正側的視窗區段(7)之前的大約3至10 毫米之距離(Aa)處。 1 3.如申請專利範圍第8至1 2項中任一項之燈,其中該正側 的視窗區段(7)和該內電極(13)之正側的末端之間的距離 (Ad等於或小於該至少一長形的外電極(10a-1 Of)之相對 應的距離(Aa)。 14. 如申請專利範圍第8至10項中任一項之燈,其中該外電 極形成金屬製的室(17),該放電管(2)經由一開口而伸入 至此室(17)中,該開口是以該燈(1)之插座(3)來氣密地密 封著。 15. 如申請專利範圍第8至14項中任一項之燈,其中設有已 熔合的泵桿(10),其配置在管形的區段(9)之區域中或配 置在該管形的放電管(2)之遠離該正側的視窗區段(7)之 末端之區域中。 ® 16.—種照射系統,其具有一處理室(17),其中安裝有如申請 專利範圍第8至15項中任一項所述之燈(1),以進行如申 請專利範圍第1至7項中任一項所述的方法。 17.如申請專利範圍第16項之照射系統,其中該處理室(17) 具有一開口,該燈(1)之放電管(2)經由該開口而伸入至該 處理室(17)中,其中該開口藉由該燈(1)之插座(3)而氣密 地被密封著且該燈(1)之外部的電流導線(15)在該插座(3) 之內部中針對大氣而氣密地形成在該處理室(17)之內部 中。 -17- 201006576 18.如申請專利範圍第π項之照射系統,其中該處理室是由 可導電的材料構成且形成該燈用的外電極。 19·如申請專利範圍第π項之照射系統,其中一導體伸入至 該處理室中,該導體形成該燈用的外電極。 2〇.如申請專利範圍第16至19項中任一項之照射系統,其 中該燈是與一適合用來操作該燈之供電裝置相連接。
    -18-
TW098118347A 2008-06-05 2009-06-03 Method for treatment of surfaces, emitter for this method and irradiation system with this emitter TW201006576A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2008/056966 WO2009146744A1 (de) 2008-06-05 2008-06-05 Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler

Publications (1)

Publication Number Publication Date
TW201006576A true TW201006576A (en) 2010-02-16

Family

ID=40383593

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098118347A TW201006576A (en) 2008-06-05 2009-06-03 Method for treatment of surfaces, emitter for this method and irradiation system with this emitter

Country Status (3)

Country Link
US (1) US20110056513A1 (zh)
TW (1) TW201006576A (zh)
WO (1) WO2009146744A1 (zh)

Families Citing this family (330)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8399869B2 (en) * 2008-12-11 2013-03-19 Osram Gesellschaft Mit Beschraenkter Haftung UV luminaire having a plurality of UV lamps, particularly for technical product processing
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
RU2565684C2 (ru) * 2010-07-26 2015-10-20 Конинклейке Филипс Электроникс Н.В. Устройство для подвергания текучей среды дезинфицирующей обработке путем воздействия на текучую среду ультрафиолетовым светом
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US20140099798A1 (en) * 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9153427B2 (en) 2012-12-18 2015-10-06 Agilent Technologies, Inc. Vacuum ultraviolet photon source, ionization apparatus, and related methods
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202344708A (zh) 2018-05-08 2023-11-16 荷蘭商Asm Ip私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Asm 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en) 2018-06-27 2022-11-08 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
EP3648145B1 (en) * 2018-11-05 2022-01-05 Xylem Europe GmbH Vacuum ultraviolet excimer lamp with an inner axially symmetric wire electrode
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Asm Ip私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TW202044325A (zh) 2019-02-20 2020-12-01 荷蘭商Asm Ip私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Asm Ip私人控股有限公司 基材處理設備及處理基材之方法
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー.ブイ. 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Asm Ip控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー.ブイ. 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Asm Ip私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
JP2021109175A (ja) 2020-01-06 2021-08-02 エーエスエム・アイピー・ホールディング・ベー・フェー ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
KR20210117157A (ko) 2020-03-12 2021-09-28 에이에스엠 아이피 홀딩 비.브이. 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
JP7453862B2 (ja) 2020-06-23 2024-03-21 浜松ホトニクス株式会社 エキシマランプ
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Asm Ip私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Asm Ip私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4697544A (en) * 1984-12-31 1987-10-06 Stevens Keith A Disposable spray shield
US4687544A (en) * 1985-05-17 1987-08-18 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
DE4311197A1 (de) * 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
TW260806B (zh) * 1993-11-26 1995-10-21 Ushio Electric Inc
DE19681602T1 (de) * 1995-10-19 1998-11-26 Massachusetts Inst Technology Verfahren zum Entfernen von Metall
US6086679A (en) * 1997-10-24 2000-07-11 Quester Technology, Inc. Deposition systems and processes for transport polymerization and chemical vapor deposition
US6020458A (en) * 1997-10-24 2000-02-01 Quester Technology, Inc. Precursors for making low dielectric constant materials with improved thermal stability
US6015759A (en) * 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
DE19957034B4 (de) * 1999-11-26 2006-04-13 Heraeus Noblelight Gmbh Verfahren zur Behandlung von Oberflächen von Substraten und Vorrichtung
DE10112900C1 (de) * 2001-03-15 2002-07-11 Heraeus Noblelight Gmbh Excimer-Strahler, insbesondere UV-Strahler
DE10211611A1 (de) * 2002-03-12 2003-09-25 Zeiss Carl Smt Ag Verfahren und Vorrichtung zur Dekontamination optischer Oberflächen
DE10222100A1 (de) * 2002-05-17 2003-11-27 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Dielektrische Barriere-Entladungslampe mit Sockel
US20040108059A1 (en) * 2002-09-20 2004-06-10 Thomas Johnston System and method for removal of materials from an article
US20060040499A1 (en) * 2004-08-20 2006-02-23 Steve Walther In situ surface contaminant removal for ion implanting
US20060263275A1 (en) * 2005-05-09 2006-11-23 Liconic Ag Cabinet and sterilizing lamp
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US7789965B2 (en) * 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US20080302400A1 (en) * 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article

Also Published As

Publication number Publication date
WO2009146744A9 (de) 2010-12-16
US20110056513A1 (en) 2011-03-10
WO2009146744A1 (de) 2009-12-10

Similar Documents

Publication Publication Date Title
TW201006576A (en) Method for treatment of surfaces, emitter for this method and irradiation system with this emitter
EP1483777B1 (en) Device for generating uv radiation
RU2471261C2 (ru) Газоразрядная лампа с диэлектрическим барьером
US7675237B2 (en) Dielectric barrier discharge lamp with integrated multifunction means
JP5095447B2 (ja) 補助光源を備える光源装置
US8063564B2 (en) Starting aid for HID lamp
JP5371166B2 (ja) 高圧放電ランプ及びイグニッションアンテナを有するユニット
EP1859472A2 (en) Segmented dielectric barrier discharge lamp
US20030071571A1 (en) Ultraviolet light source driven by capillary discharge plasma and method for surface treatment using the same
TW200307309A (en) Dielectric barrier-discharge lamp with socket
US20030011321A1 (en) Dielectric barrier discharge lamp having a starting aid
US20050035711A1 (en) Method and apparatus for a high efficiency ultraviolet radiation source
CN1773665A (zh) 闪光放电灯以及光能照射装置
JP3399355B2 (ja) 外部電極型放電ランプ
US20020067130A1 (en) Flat-panel, large-area, dielectric barrier discharge-driven V(UV) light source
US7391154B2 (en) Low-pressure gas discharge lamp with gas filling containing tin
JP4140320B2 (ja) エキシマランプ点灯装置
JP2004227820A (ja) 放電ランプ
TW202414507A (zh) 具有等離子體形成用觸發器的準分子燈組件
JPH1131476A (ja) アマルガムセルおよび蛍光ランプ
JP2000235840A (ja) 誘電体バリヤ放電ランプ