TW201002721A - Dioxaanthanthrene compound and semiconductor device - Google Patents
Dioxaanthanthrene compound and semiconductor device Download PDFInfo
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- TW201002721A TW201002721A TW098116751A TW98116751A TW201002721A TW 201002721 A TW201002721 A TW 201002721A TW 098116751 A TW098116751 A TW 098116751A TW 98116751 A TW98116751 A TW 98116751A TW 201002721 A TW201002721 A TW 201002721A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 99
- 239000004065 semiconductor Substances 0.000 title claims description 58
- -1 decyloxy, decylamino Chemical group 0.000 claims description 114
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- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 34
- 125000001424 substituent group Chemical group 0.000 claims description 34
- 244000291564 Allium cepa Species 0.000 claims description 33
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 17
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
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- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 125000003356 phenylsulfanyl group Chemical group [*]SC1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- VIHDTGHDWPVSMM-UHFFFAOYSA-N ruthenium;triphenylphosphane Chemical compound [Ru].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 VIHDTGHDWPVSMM-UHFFFAOYSA-N 0.000 description 1
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
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- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
- C07D493/06—Peri-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008136292 | 2008-05-26 |
Publications (1)
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|---|---|
| TW201002721A true TW201002721A (en) | 2010-01-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098116751A TW201002721A (en) | 2008-05-26 | 2009-05-20 | Dioxaanthanthrene compound and semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090289248A1 (OSRAM) |
| JP (1) | JP5470935B2 (OSRAM) |
| CN (1) | CN101591343B (OSRAM) |
| TW (1) | TW201002721A (OSRAM) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011012001A (ja) * | 2009-07-01 | 2011-01-20 | Sony Corp | アンタントレン系化合物及び半導体装置 |
| JP5573219B2 (ja) * | 2010-02-18 | 2014-08-20 | ソニー株式会社 | 薄膜トランジスタ、ならびに電子機器およびその製造方法 |
| JP5666259B2 (ja) | 2010-03-31 | 2015-02-12 | 富士フイルム株式会社 | 放射線撮像装置 |
| JP5494295B2 (ja) * | 2010-06-30 | 2014-05-14 | 日本ゼオン株式会社 | 重合性化合物、重合性組成物、高分子及び半導体装置 |
| JP5616146B2 (ja) * | 2010-07-05 | 2014-10-29 | 山本化成株式会社 | 有機トランジスタ |
| JP5454394B2 (ja) | 2010-07-09 | 2014-03-26 | ソニー株式会社 | 光電変換素子及び固体撮像装置 |
| JP2012019131A (ja) | 2010-07-09 | 2012-01-26 | Sony Corp | 光電変換素子及び固体撮像装置 |
| US8420440B2 (en) | 2011-02-10 | 2013-04-16 | Xerox Corporation | Semiconducting composition |
| US9123899B2 (en) | 2011-02-10 | 2015-09-01 | Samsung Electronics Co., Ltd. | Semiconductor compound |
| US9123902B2 (en) | 2011-02-10 | 2015-09-01 | Samsung Electronics Co., Ltd. | Semiconductor compound |
| JP2012209485A (ja) | 2011-03-30 | 2012-10-25 | Sony Corp | 有機素子の製造方法、有機分子結晶層の接合方法、細線状導電体の製造方法、有機素子および細線状導電体 |
| JP5807738B2 (ja) * | 2011-03-30 | 2015-11-10 | ソニー株式会社 | 有機トランジスタの製造方法、有機トランジスタ、半導体装置の製造方法、半導体装置および電子機器 |
| EP2767540A1 (en) | 2011-10-12 | 2014-08-20 | Sony Corporation | Dioxaanthanthrene-based compound, laminated structure and molding method thereof, and electronic device and production method thereof |
| JP2013098487A (ja) | 2011-11-04 | 2013-05-20 | Sony Corp | 有機半導体素子の製造方法、有機半導体素子および電子機器 |
| JP5899010B2 (ja) * | 2012-03-06 | 2016-04-06 | 株式会社ダイセル | アンタントレン系化合物およびその製造方法 |
| WO2013157421A1 (ja) * | 2012-04-17 | 2013-10-24 | ソニー株式会社 | 有機半導体層、電子デバイス、及び、電子デバイスの製造方法 |
| JP2014055208A (ja) * | 2012-09-11 | 2014-03-27 | Sony Corp | ６，１２‐ジオキサアンタントレン誘導体、有機半導体素子、及び、有機半導体素子の製造方法 |
| EP3522243A4 (en) | 2016-09-29 | 2019-10-23 | FUJIFILM Corporation | COMPOSITION FOR FORMING AN ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR THE PRODUCTION THEREOF AND ORGANIC SEMICONDUCTOR ELEMENT |
| CN111116602B (zh) * | 2019-11-28 | 2021-05-14 | 北京燕化集联光电技术有限公司 | 一种oled材料及其在有机电致发光器件中的应用 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE483236C (de) * | 1926-07-22 | 1929-09-27 | I G Farbenindustrie Akt Ges | Verfahren zur Herstellung von Kuepenfarbstoffen |
| DE545212C (de) * | 1928-07-29 | 1932-02-26 | I G Farbenindustrie Akt Ges | Verfahren zur Darstellung von Derivaten des Dinaphthylendioxyds |
| GB789310A (en) * | 1954-10-28 | 1958-01-15 | Bayer Ag | Improvements in or relating to the production of dyestuffs on the fibre |
| US6690029B1 (en) * | 2001-08-24 | 2004-02-10 | University Of Kentucky Research Foundation | Substituted pentacenes and electronic devices made with substituted pentacenes |
| JP2004140267A (ja) * | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| US20050194640A1 (en) * | 2003-10-17 | 2005-09-08 | Lazarev Pavel I. | Organic thin-film transistor |
| DE102006035035A1 (de) * | 2006-07-28 | 2008-01-31 | Merck Patent Gmbh | Neue Materialien für organische Elektrolumineszenzvorrichtungen |
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2009
- 2009-03-13 JP JP2009061511A patent/JP5470935B2/ja not_active Expired - Fee Related
- 2009-05-20 US US12/469,343 patent/US20090289248A1/en not_active Abandoned
- 2009-05-20 TW TW098116751A patent/TW201002721A/zh unknown
- 2009-05-25 CN CN200910143041.5A patent/CN101591343B/zh not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN101591343B (zh) | 2014-06-18 |
| CN101591343A (zh) | 2009-12-02 |
| US20090289248A1 (en) | 2009-11-26 |
| JP5470935B2 (ja) | 2014-04-16 |
| JP2010006794A (ja) | 2010-01-14 |
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