JP5470935B2 - ジオキサアンタントレン系化合物及び半導体装置 - Google Patents

ジオキサアンタントレン系化合物及び半導体装置 Download PDF

Info

Publication number
JP5470935B2
JP5470935B2 JP2009061511A JP2009061511A JP5470935B2 JP 5470935 B2 JP5470935 B2 JP 5470935B2 JP 2009061511 A JP2009061511 A JP 2009061511A JP 2009061511 A JP2009061511 A JP 2009061511A JP 5470935 B2 JP5470935 B2 JP 5470935B2
Authority
JP
Japan
Prior art keywords
group
perixanthenoxanthene
hydrogen
substituent
bromine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009061511A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010006794A5 (OSRAM
JP2010006794A (ja
Inventor
典仁 小林
真理 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009061511A priority Critical patent/JP5470935B2/ja
Publication of JP2010006794A publication Critical patent/JP2010006794A/ja
Publication of JP2010006794A5 publication Critical patent/JP2010006794A5/ja
Application granted granted Critical
Publication of JP5470935B2 publication Critical patent/JP5470935B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/06—Peri-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2009061511A 2008-05-26 2009-03-13 ジオキサアンタントレン系化合物及び半導体装置 Expired - Fee Related JP5470935B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009061511A JP5470935B2 (ja) 2008-05-26 2009-03-13 ジオキサアンタントレン系化合物及び半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008136292 2008-05-26
JP2008136292 2008-05-26
JP2009061511A JP5470935B2 (ja) 2008-05-26 2009-03-13 ジオキサアンタントレン系化合物及び半導体装置

Publications (3)

Publication Number Publication Date
JP2010006794A JP2010006794A (ja) 2010-01-14
JP2010006794A5 JP2010006794A5 (OSRAM) 2012-03-01
JP5470935B2 true JP5470935B2 (ja) 2014-04-16

Family

ID=41341416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009061511A Expired - Fee Related JP5470935B2 (ja) 2008-05-26 2009-03-13 ジオキサアンタントレン系化合物及び半導体装置

Country Status (4)

Country Link
US (1) US20090289248A1 (OSRAM)
JP (1) JP5470935B2 (OSRAM)
CN (1) CN101591343B (OSRAM)
TW (1) TW201002721A (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011012001A (ja) * 2009-07-01 2011-01-20 Sony Corp アンタントレン系化合物及び半導体装置
JP5573219B2 (ja) * 2010-02-18 2014-08-20 ソニー株式会社 薄膜トランジスタ、ならびに電子機器およびその製造方法
JP5666259B2 (ja) 2010-03-31 2015-02-12 富士フイルム株式会社 放射線撮像装置
JP5494295B2 (ja) * 2010-06-30 2014-05-14 日本ゼオン株式会社 重合性化合物、重合性組成物、高分子及び半導体装置
JP5616146B2 (ja) * 2010-07-05 2014-10-29 山本化成株式会社 有機トランジスタ
JP5454394B2 (ja) 2010-07-09 2014-03-26 ソニー株式会社 光電変換素子及び固体撮像装置
JP2012019131A (ja) 2010-07-09 2012-01-26 Sony Corp 光電変換素子及び固体撮像装置
US8420440B2 (en) 2011-02-10 2013-04-16 Xerox Corporation Semiconducting composition
US9123899B2 (en) 2011-02-10 2015-09-01 Samsung Electronics Co., Ltd. Semiconductor compound
US9123902B2 (en) 2011-02-10 2015-09-01 Samsung Electronics Co., Ltd. Semiconductor compound
JP2012209485A (ja) 2011-03-30 2012-10-25 Sony Corp 有機素子の製造方法、有機分子結晶層の接合方法、細線状導電体の製造方法、有機素子および細線状導電体
JP5807738B2 (ja) * 2011-03-30 2015-11-10 ソニー株式会社 有機トランジスタの製造方法、有機トランジスタ、半導体装置の製造方法、半導体装置および電子機器
EP2767540A1 (en) 2011-10-12 2014-08-20 Sony Corporation Dioxaanthanthrene-based compound, laminated structure and molding method thereof, and electronic device and production method thereof
JP2013098487A (ja) 2011-11-04 2013-05-20 Sony Corp 有機半導体素子の製造方法、有機半導体素子および電子機器
JP5899010B2 (ja) * 2012-03-06 2016-04-06 株式会社ダイセル アンタントレン系化合物およびその製造方法
WO2013157421A1 (ja) * 2012-04-17 2013-10-24 ソニー株式会社 有機半導体層、電子デバイス、及び、電子デバイスの製造方法
JP2014055208A (ja) * 2012-09-11 2014-03-27 Sony Corp ６，１２‐ジオキサアンタントレン誘導体、有機半導体素子、及び、有機半導体素子の製造方法
EP3522243A4 (en) 2016-09-29 2019-10-23 FUJIFILM Corporation COMPOSITION FOR FORMING AN ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR FILM AND METHOD FOR THE PRODUCTION THEREOF AND ORGANIC SEMICONDUCTOR ELEMENT
CN111116602B (zh) * 2019-11-28 2021-05-14 北京燕化集联光电技术有限公司 一种oled材料及其在有机电致发光器件中的应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE483236C (de) * 1926-07-22 1929-09-27 I G Farbenindustrie Akt Ges Verfahren zur Herstellung von Kuepenfarbstoffen
DE545212C (de) * 1928-07-29 1932-02-26 I G Farbenindustrie Akt Ges Verfahren zur Darstellung von Derivaten des Dinaphthylendioxyds
GB789310A (en) * 1954-10-28 1958-01-15 Bayer Ag Improvements in or relating to the production of dyestuffs on the fibre
US6690029B1 (en) * 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US20050194640A1 (en) * 2003-10-17 2005-09-08 Lazarev Pavel I. Organic thin-film transistor
DE102006035035A1 (de) * 2006-07-28 2008-01-31 Merck Patent Gmbh Neue Materialien für organische Elektrolumineszenzvorrichtungen

Also Published As

Publication number Publication date
CN101591343B (zh) 2014-06-18
CN101591343A (zh) 2009-12-02
TW201002721A (en) 2010-01-16
US20090289248A1 (en) 2009-11-26
JP2010006794A (ja) 2010-01-14

Similar Documents

Publication Publication Date Title
JP5470935B2 (ja) ジオキサアンタントレン系化合物及び半導体装置
US8860018B2 (en) Anthanthrene based compound and semiconductor device
JP2009029746A (ja) 有機材料および半導体装置
JP2005206750A (ja) 有機半導体材料、有機トランジスタ、電界効果トランジスタ、スイッチング素子及び５員複素環化合物
EP2767540A1 (en) Dioxaanthanthrene-based compound, laminated structure and molding method thereof, and electronic device and production method thereof
US8129497B2 (en) Organic thin film transistor
US8546796B2 (en) Semiconductor device, method of manufacturing the same, and method of forming multilayer semiconductor thin film
JP5228907B2 (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2008103464A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
US20150108447A1 (en) Dioxaanthanthrene compound and electronic device
JP6094831B2 (ja) 有機半導体層、電子デバイス、及び、電子デバイスの製造方法
CN110326122A (zh) 有机晶体管
JP2006140180A (ja) 有機薄膜トランジスタ材料、有機薄膜トランジスタ、電界効果トランジスタ及びスイッチング素子
JP2007317984A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2007311609A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2013087071A (ja) ジオキサアンタントレン系化合物及び電子デバイス
JP2013082655A (ja) ジオキサアンタントレン系化合物及び電子デバイス
JP2007059780A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JPWO2006098121A1 (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス、有機薄膜トランジスタ及び有機薄膜トランジスタの形成方法
JPWO2006064776A1 (ja) 有機薄膜トランジスタの製造方法
JP2007311608A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JPWO2007069416A1 (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2004303890A (ja) 有機薄膜トランジスタ、薄膜形成方法及び有機薄膜トランジスタの製造方法
JP2008108817A (ja) 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120117

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120117

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130827

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131011

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140107

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140120

LAPS Cancellation because of no payment of annual fees