TW200933707A - Method for manufacturing epitaxial wafer - Google Patents

Method for manufacturing epitaxial wafer Download PDF

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Publication number
TW200933707A
TW200933707A TW097142974A TW97142974A TW200933707A TW 200933707 A TW200933707 A TW 200933707A TW 097142974 A TW097142974 A TW 097142974A TW 97142974 A TW97142974 A TW 97142974A TW 200933707 A TW200933707 A TW 200933707A
Authority
TW
Taiwan
Prior art keywords
wafer
flaw
epitaxial
etching
boundary region
Prior art date
Application number
TW097142974A
Other languages
English (en)
Chinese (zh)
Other versions
TWI368938B (enExample
Inventor
Kazushige Takaishi
Tomonori Miura
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of TW200933707A publication Critical patent/TW200933707A/zh
Application granted granted Critical
Publication of TWI368938B publication Critical patent/TWI368938B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
TW097142974A 2007-11-08 2008-11-07 Method for manufacturing epitaxial wafer TW200933707A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007291339 2007-11-08

Publications (2)

Publication Number Publication Date
TW200933707A true TW200933707A (en) 2009-08-01
TWI368938B TWI368938B (enExample) 2012-07-21

Family

ID=40625800

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142974A TW200933707A (en) 2007-11-08 2008-11-07 Method for manufacturing epitaxial wafer

Country Status (4)

Country Link
US (1) US7998867B2 (enExample)
JP (1) JP5493863B2 (enExample)
TW (1) TW200933707A (enExample)
WO (1) WO2009060913A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461845A (zh) * 2020-05-11 2022-12-09 信越半导体株式会社 硅晶圆的蚀刻方法及蚀刻装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5795461B2 (ja) * 2009-08-19 2015-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
JP6035982B2 (ja) * 2012-08-09 2016-11-30 株式会社Sumco エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ
TWI574355B (zh) * 2012-08-13 2017-03-11 矽品精密工業股份有限公司 半導體封裝件及其製法
US9583363B2 (en) * 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial distension
JP6387131B2 (ja) * 2017-02-20 2018-09-05 Ｓｐｐテクノロジーズ株式会社 プラズマ加工方法及びこの方法を用いて製造された基板

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
JPH0810685B2 (ja) * 1990-05-11 1996-01-31 富士通株式会社 基板のウェット処理装置
JP2827885B2 (ja) * 1994-02-12 1998-11-25 信越半導体株式会社 半導体単結晶基板およびその製造方法
JP3175619B2 (ja) * 1997-03-07 2001-06-11 日本電気株式会社 半導体基板の製造方法
JP3368799B2 (ja) * 1997-05-22 2003-01-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体ウェハおよびその製造方法
JP2002134521A (ja) 2000-10-30 2002-05-10 Sumitomo Metal Ind Ltd シリコン半導体基板の熱処理方法
JP2003229370A (ja) 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP4123861B2 (ja) * 2002-08-06 2008-07-23 株式会社Ｓｕｍｃｏ 半導体基板の製造方法
JP2007204286A (ja) * 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法
US7816765B2 (en) * 2008-06-05 2010-10-19 Sumco Corporation Silicon epitaxial wafer and the production method thereof
JP5487565B2 (ja) * 2008-06-19 2014-05-07 株式会社Ｓｕｍｃｏ エピタキシャルウェーハおよびその製造方法
JP2010016312A (ja) * 2008-07-07 2010-01-21 Sumco Corp エピタキシャルウェーハの製造方法
JP2010141272A (ja) * 2008-12-15 2010-06-24 Sumco Corp エピタキシャルウェーハとその製造方法
JP5141541B2 (ja) * 2008-12-24 2013-02-13 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115461845A (zh) * 2020-05-11 2022-12-09 信越半导体株式会社 硅晶圆的蚀刻方法及蚀刻装置

Also Published As

Publication number Publication date
JPWO2009060913A1 (ja) 2011-03-24
US20100261341A1 (en) 2010-10-14
TWI368938B (enExample) 2012-07-21
US7998867B2 (en) 2011-08-16
JP5493863B2 (ja) 2014-05-14
WO2009060913A1 (ja) 2009-05-14

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