JP5493863B2 - エピタキシャルウェーハの製造方法 - Google Patents

エピタキシャルウェーハの製造方法 Download PDF

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Publication number
JP5493863B2
JP5493863B2 JP2009540086A JP2009540086A JP5493863B2 JP 5493863 B2 JP5493863 B2 JP 5493863B2 JP 2009540086 A JP2009540086 A JP 2009540086A JP 2009540086 A JP2009540086 A JP 2009540086A JP 5493863 B2 JP5493863 B2 JP 5493863B2
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JP
Japan
Prior art keywords
wafer
epitaxial
scratch
back surface
etching
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JP2009540086A
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English (en)
Japanese (ja)
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JPWO2009060913A1 (ja
Inventor
和成 高石
友紀 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
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Priority to JP2009540086A priority Critical patent/JP5493863B2/ja
Publication of JPWO2009060913A1 publication Critical patent/JPWO2009060913A1/ja
Application granted granted Critical
Publication of JP5493863B2 publication Critical patent/JP5493863B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Weting (AREA)
JP2009540086A 2007-11-08 2008-11-06 エピタキシャルウェーハの製造方法 Active JP5493863B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009540086A JP5493863B2 (ja) 2007-11-08 2008-11-06 エピタキシャルウェーハの製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007291339 2007-11-08
JP2007291339 2007-11-08
PCT/JP2008/070236 WO2009060913A1 (ja) 2007-11-08 2008-11-06 エピタキシャルウェーハの製造方法
JP2009540086A JP5493863B2 (ja) 2007-11-08 2008-11-06 エピタキシャルウェーハの製造方法

Publications (2)

Publication Number Publication Date
JPWO2009060913A1 JPWO2009060913A1 (ja) 2011-03-24
JP5493863B2 true JP5493863B2 (ja) 2014-05-14

Family

ID=40625800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009540086A Active JP5493863B2 (ja) 2007-11-08 2008-11-06 エピタキシャルウェーハの製造方法

Country Status (4)

Country Link
US (1) US7998867B2 (enExample)
JP (1) JP5493863B2 (enExample)
TW (1) TW200933707A (enExample)
WO (1) WO2009060913A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5795461B2 (ja) * 2009-08-19 2015-10-14 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP2011082443A (ja) * 2009-10-09 2011-04-21 Sumco Corp エピタキシャルウェーハおよびその製造方法
JP6035982B2 (ja) * 2012-08-09 2016-11-30 株式会社Sumco エピタキシャルシリコンウェーハの製造方法およびエピタキシャルシリコンウェーハ
TWI574355B (zh) * 2012-08-13 2017-03-11 矽品精密工業股份有限公司 半導體封裝件及其製法
US9583363B2 (en) * 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial distension
JP6387131B2 (ja) * 2017-02-20 2018-09-05 Ｓｐｐテクノロジーズ株式会社 プラズマ加工方法及びこの方法を用いて製造された基板
JP7276242B2 (ja) * 2020-05-11 2023-05-18 信越半導体株式会社 シリコンウェーハのエッチング方法及びエッチング装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0417334A (ja) * 1990-05-11 1992-01-22 Fujitsu Ltd 基板のウェット処理装置
JPH10256200A (ja) * 1997-03-07 1998-09-25 Nec Corp 半導体基板およびその製造方法
JP2002134521A (ja) * 2000-10-30 2002-05-10 Sumitomo Metal Ind Ltd シリコン半導体基板の熱処理方法
JP2004071836A (ja) * 2002-08-06 2004-03-04 Sumitomo Mitsubishi Silicon Corp 半導体基板の製造方法
JP2007204286A (ja) * 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4925809A (en) * 1987-05-23 1990-05-15 Osaka Titanium Co., Ltd. Semiconductor wafer and epitaxial growth on the semiconductor wafer with autodoping control and manufacturing method therefor
JP2827885B2 (ja) * 1994-02-12 1998-11-25 信越半導体株式会社 半導体単結晶基板およびその製造方法
JP3368799B2 (ja) * 1997-05-22 2003-01-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体ウェハおよびその製造方法
JP2003229370A (ja) 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
US7816765B2 (en) * 2008-06-05 2010-10-19 Sumco Corporation Silicon epitaxial wafer and the production method thereof
JP5487565B2 (ja) * 2008-06-19 2014-05-07 株式会社Ｓｕｍｃｏ エピタキシャルウェーハおよびその製造方法
JP2010016312A (ja) * 2008-07-07 2010-01-21 Sumco Corp エピタキシャルウェーハの製造方法
JP2010141272A (ja) * 2008-12-15 2010-06-24 Sumco Corp エピタキシャルウェーハとその製造方法
JP5141541B2 (ja) * 2008-12-24 2013-02-13 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0417334A (ja) * 1990-05-11 1992-01-22 Fujitsu Ltd 基板のウェット処理装置
JPH10256200A (ja) * 1997-03-07 1998-09-25 Nec Corp 半導体基板およびその製造方法
JP2002134521A (ja) * 2000-10-30 2002-05-10 Sumitomo Metal Ind Ltd シリコン半導体基板の熱処理方法
JP2004071836A (ja) * 2002-08-06 2004-03-04 Sumitomo Mitsubishi Silicon Corp 半導体基板の製造方法
JP2007204286A (ja) * 2006-01-31 2007-08-16 Sumco Corp エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
TW200933707A (en) 2009-08-01
JPWO2009060913A1 (ja) 2011-03-24
US20100261341A1 (en) 2010-10-14
TWI368938B (enExample) 2012-07-21
US7998867B2 (en) 2011-08-16
WO2009060913A1 (ja) 2009-05-14

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