TW200933289A - Photomask, method of manufacturing the photomask, and method of transferring a pattern - Google Patents
Photomask, method of manufacturing the photomask, and method of transferring a pattern Download PDFInfo
- Publication number
- TW200933289A TW200933289A TW097136430A TW97136430A TW200933289A TW 200933289 A TW200933289 A TW 200933289A TW 097136430 A TW097136430 A TW 097136430A TW 97136430 A TW97136430 A TW 97136430A TW 200933289 A TW200933289 A TW 200933289A
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- light
- semi
- film
- reticle
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 238000002834 transmittance Methods 0.000 claims description 30
- 230000005540 biological transmission Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 9
- 230000002829 reductive effect Effects 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 113
- 230000015556 catabolic process Effects 0.000 description 20
- 239000011651 chromium Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000003068 static effect Effects 0.000 description 3
- 241000219112 Cucumis Species 0.000 description 2
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005421 electrostatic potential Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007256931A JP2009086384A (ja) | 2007-09-29 | 2007-09-29 | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200933289A true TW200933289A (en) | 2009-08-01 |
Family
ID=40517248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097136430A TW200933289A (en) | 2007-09-29 | 2008-09-23 | Photomask, method of manufacturing the photomask, and method of transferring a pattern |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2009086384A (enExample) |
| KR (1) | KR20090033314A (enExample) |
| CN (1) | CN101398612B (enExample) |
| TW (1) | TW200933289A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009086385A (ja) * | 2007-09-29 | 2009-04-23 | Hoya Corp | フォトマスク及びフォトマスクの製造方法、並びにパターン転写方法 |
| JP4993113B2 (ja) * | 2007-11-14 | 2012-08-08 | 大日本印刷株式会社 | フォトマスク |
| CN106773345B (zh) * | 2016-12-20 | 2019-12-24 | 惠科股份有限公司 | 显示面板、显示面板的制程及光罩 |
| KR20190038981A (ko) * | 2017-10-01 | 2019-04-10 | 주식회사 에스앤에스텍 | 정전 파괴 방지용 블랭크 마스크 및 포토마스크 |
| TWI710850B (zh) * | 2018-03-23 | 2020-11-21 | 日商Ｈｏｙａ股份有限公司 | 光罩、光罩基底、光罩之製造方法、及電子元件之製造方法 |
| CN109143775A (zh) * | 2018-08-29 | 2019-01-04 | 上海华力集成电路制造有限公司 | 降低光罩静电放电风险的方法及其得到的光罩图形 |
| CN111736435A (zh) * | 2020-07-23 | 2020-10-02 | 上海华力微电子有限公司 | 光刻装置及其曝光方法 |
| CN112711174A (zh) * | 2020-12-28 | 2021-04-27 | Tcl华星光电技术有限公司 | 光罩、阵列基板的制备方法与显示面板 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000131823A (ja) * | 1998-10-27 | 2000-05-12 | New Japan Radio Co Ltd | 半導体レチクル・マスク |
| JP2002278048A (ja) * | 2001-03-16 | 2002-09-27 | Canon Inc | フォトマスク及びカラーフィルタ製造方法 |
| JP4210166B2 (ja) * | 2003-06-30 | 2009-01-14 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法 |
| JP4393290B2 (ja) * | 2003-06-30 | 2010-01-06 | Ｈｏｙａ株式会社 | グレートーンマスクの製造方法及び薄膜トランジスタ基板の製造方法 |
| JP2007093798A (ja) * | 2005-09-27 | 2007-04-12 | Sharp Corp | フォトマスク及びその製造方法 |
| CN100517075C (zh) * | 2006-03-09 | 2009-07-22 | 北京京东方光电科技有限公司 | 一种薄膜晶体管液晶显示器的阵列基板的制作方法 |
| JP2009086383A (ja) * | 2007-09-29 | 2009-04-23 | Hoya Corp | グレートーンマスク、パターン転写方法、及びグレートーンマスクブランク |
-
2007
- 2007-09-29 JP JP2007256931A patent/JP2009086384A/ja active Pending
-
2008
- 2008-09-23 TW TW097136430A patent/TW200933289A/zh unknown
- 2008-09-26 KR KR1020080094415A patent/KR20090033314A/ko not_active Ceased
- 2008-09-28 CN CN2008101681334A patent/CN101398612B/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101398612B (zh) | 2011-11-23 |
| CN101398612A (zh) | 2009-04-01 |
| KR20090033314A (ko) | 2009-04-02 |
| JP2009086384A (ja) | 2009-04-23 |
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