TW200919492A - Conductor paste for ceramic substrate and electric circuit - Google Patents

Conductor paste for ceramic substrate and electric circuit Download PDF

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Publication number
TW200919492A
TW200919492A TW097124431A TW97124431A TW200919492A TW 200919492 A TW200919492 A TW 200919492A TW 097124431 A TW097124431 A TW 097124431A TW 97124431 A TW97124431 A TW 97124431A TW 200919492 A TW200919492 A TW 200919492A
Authority
TW
Taiwan
Prior art keywords
powder
silver
weight
conductive
palladium
Prior art date
Application number
TW097124431A
Other languages
English (en)
Chinese (zh)
Inventor
Akira Inaba
Naoto Nakajima
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39764755&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200919492(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Du Pont filed Critical Du Pont
Publication of TW200919492A publication Critical patent/TW200919492A/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5116—Ag or Au
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/88—Metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Conductive Materials (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW097124431A 2007-06-29 2008-06-27 Conductor paste for ceramic substrate and electric circuit TW200919492A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/824,194 US7704416B2 (en) 2007-06-29 2007-06-29 Conductor paste for ceramic substrate and electric circuit

Publications (1)

Publication Number Publication Date
TW200919492A true TW200919492A (en) 2009-05-01

Family

ID=39764755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097124431A TW200919492A (en) 2007-06-29 2008-06-27 Conductor paste for ceramic substrate and electric circuit

Country Status (8)

Country Link
US (3) US7704416B2 (enExample)
EP (1) EP2164822B1 (enExample)
JP (1) JP5303552B2 (enExample)
KR (1) KR20100029142A (enExample)
CN (1) CN101720311A (enExample)
AT (1) ATE525338T1 (enExample)
TW (1) TW200919492A (enExample)
WO (1) WO2009006242A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI425894B (zh) * 2011-12-26 2014-02-01 Vin Cen Shi 陶瓷基板漸縮凹陷區域之導電層附著加工方法及導電膠組成物
US10207958B2 (en) 2013-06-05 2019-02-19 Ceramtec Gmbh Metal coating on ceramic substrates

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* Cited by examiner, † Cited by third party
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US7704416B2 (en) * 2007-06-29 2010-04-27 E.I. Du Pont De Nemours And Company Conductor paste for ceramic substrate and electric circuit
US20090211626A1 (en) * 2008-02-26 2009-08-27 Hideki Akimoto Conductive paste and grid electrode for silicon solar cells
FR2942516B1 (fr) 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Assemblage affleurant.
FR2942517B1 (fr) * 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Materiau compliant.
FR2942515B1 (fr) * 2009-02-24 2015-07-03 Saint Gobain Ct Recherches Dispositif d'assemblage.
FR2942471A1 (fr) 2009-02-24 2010-08-27 Saint Gobain Ct Recherches Piece ceramique revetue.
CN102317227A (zh) * 2009-02-24 2012-01-11 日本电气硝子株式会社 电极形成用玻璃组合物和电极形成材料
US20130284256A1 (en) * 2009-04-09 2013-10-31 E I Du Pont De Nemours And Company Lead-free conductive paste composition and semiconductor devices made therewith
WO2011016594A1 (ko) * 2009-08-07 2011-02-10 주식회사 엘지화학 실리콘 태양전지 제조용 납 프리 유리 프릿 분말 및 그 제조방법과 이를 포함하는 금속 페이스트 조성물 및 실리콘 태양전지
JP5859973B2 (ja) * 2009-11-16 2016-02-16 ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー 電気伝導性ペースト組成物
US20110195540A1 (en) * 2010-02-05 2011-08-11 Hitachi Chemical Company, Ltd. Composition for forming p-type diffusion layer, method for forming p-type diffusion layer, and method for producing photovoltaic cell
US20110256658A1 (en) * 2010-02-05 2011-10-20 Hitachi Chemical Company, Ltd. Method for producing photovoltaic cell
CN102214497B (zh) * 2010-04-07 2013-05-01 太阳控股株式会社 导电糊剂及导电图案
JP5246808B2 (ja) * 2010-04-07 2013-07-24 太陽ホールディングス株式会社 導電ペースト及び導電パターン
CN102270513B (zh) * 2010-06-03 2013-05-08 西安宏星电子浆料科技有限责任公司 氧化铝基板使用的厚膜导体浆料及其制备方法
WO2012023413A1 (ja) * 2010-08-17 2012-02-23 日本電気硝子株式会社 電極形成用ガラス及びこれを用いた電極形成材料
CN102157221A (zh) * 2011-03-28 2011-08-17 彩虹集团公司 一种环保型半导体电容器用电极银浆的浆制备方法
CN103165217B (zh) * 2011-12-14 2016-04-06 上海宝银电子材料有限公司 一种云母片电容器用导电银浆及其制备方法
CN103165223B (zh) * 2011-12-15 2016-05-11 上海宝银电子材料有限公司 一种ptc热敏电阻用高温烧结导电银浆及其制备方法
CN103165213B (zh) * 2011-12-15 2016-01-06 上海宝银电子材料有限公司 一种客车前挡玻璃用导电银浆及其制备方法
US9039942B2 (en) 2011-12-21 2015-05-26 E I Du Pont De Nemours And Company Lead-free conductive paste composition and semiconductor devices made therewith
CN103187490B (zh) * 2011-12-31 2016-04-20 谢文圣 陶瓷基板凹陷区域的导电层附着加工方法及导电胶组成物
KR102066300B1 (ko) * 2012-02-14 2020-03-02 미쓰비시 마테리알 가부시키가이샤 땜납 접합 구조, 파워 모듈, 히트 싱크가 형성된 파워 모듈용 기판 및 그것들의 제조 방법, 그리고 땜납 하지층 형성용 페이스트
AT512525B1 (de) * 2012-05-04 2013-09-15 Mikroelektronik Ges Mit Beschraenkter Haftung Ab Leiterplatte, insbesondere für ein Leistungselektronikmodul, umfassend ein elektrisch leitfähiges Substrat
US9615452B1 (en) 2012-05-10 2017-04-04 Cree Fayetteville, Inc. Silver filled trench substrate for high power and/or high temperature electronics
US9245663B2 (en) 2012-10-10 2016-01-26 E I Du Pont De Nemours And Company Thick film silver paste and its use in the manufacture of semiconductor devices
CN103366858B (zh) * 2013-07-08 2015-10-14 广东羚光新材料股份有限公司 一种led灯氧化铝基座用银浆及其应用
CN105492548A (zh) * 2013-09-16 2016-04-13 贺利氏贵金属北美康舍霍肯有限责任公司 具有促粘玻璃的导电浆料
CN103996430A (zh) * 2014-04-24 2014-08-20 安徽为民磁力科技有限公司 一种高导电性pcb电路板银浆及其制备方法
CN104078096A (zh) * 2014-06-04 2014-10-01 乐凯特科技铜陵有限公司 一种低成本印刷电路板银浆及其制备方法
CN104078099A (zh) * 2014-06-04 2014-10-01 乐凯特科技铜陵有限公司 一种环保pcb电路板导电银浆及其制备方法
KR101682939B1 (ko) * 2014-10-08 2016-12-06 김강 저온 소결 가능한 도전성 접착제
US10784383B2 (en) 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
TWI585055B (zh) * 2016-03-29 2017-06-01 中國製釉股份有限公司 玻璃材料、螢光複合材料、與發光裝置
CN106082671B (zh) * 2016-06-22 2019-01-29 丽水学院 龙泉青瓷青釉、龙泉青瓷及其制备方法
US11228080B2 (en) 2018-11-07 2022-01-18 Dupont Electronics, Inc. Dielectric filter and method for manufacturing the same
CN110400651B (zh) * 2019-06-28 2021-07-30 云南大学 一种导电银浆料及其制备方法
CN110942840A (zh) * 2019-12-13 2020-03-31 新昌中国计量大学企业创新研究院有限公司 用于氮化铝衬底的无铅铜导体浆料
CN111863312B (zh) * 2020-09-04 2022-03-29 西安宏星电子浆料科技股份有限公司 一种5g陶瓷介质滤波器用喷涂型银浆及其制备方法
CN114049982B (zh) * 2021-11-23 2024-06-07 无锡帝科电子材料股份有限公司 一种陶瓷滤波器用导电银浆及其制备方法
CN114590999B (zh) * 2022-01-20 2023-05-05 广西科技大学 一种低熔点无铅玻璃粉及其制备方法
CN115804477A (zh) * 2022-12-07 2023-03-17 深圳市卓尔悦电子科技有限公司 发热件、雾化芯、气溶胶发生装置及发热件制备方法
CN115886354A (zh) * 2022-12-08 2023-04-04 李雪春 一种用于电子烟的功能材料及其制备方法
TW202437276A (zh) 2023-02-09 2024-09-16 德商陶瓷技術公司 用於陶瓷基板的金屬糊料
CN115838303B (zh) * 2023-02-22 2023-04-28 西安石油大学 一种氮化铝陶瓷用银浆
CN116525173B (zh) * 2023-05-09 2024-07-16 湖南特发新材料有限公司 一种不锈钢基板大功率厚膜银铂钨电阻浆料、烧制方法和应用

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US20100155117A1 (en) 2010-06-24
ATE525338T1 (de) 2011-10-15
US20110114898A1 (en) 2011-05-19
WO2009006242A1 (en) 2009-01-08
US20090004369A1 (en) 2009-01-01
JP2010532586A (ja) 2010-10-07
CN101720311A (zh) 2010-06-02
EP2164822A1 (en) 2010-03-24
US7897066B2 (en) 2011-03-01
US8043536B2 (en) 2011-10-25
KR20100029142A (ko) 2010-03-15
JP5303552B2 (ja) 2013-10-02
US7704416B2 (en) 2010-04-27

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