TW200839862A - Treatment apparatus, method of treating and recording medium - Google Patents

Treatment apparatus, method of treating and recording medium Download PDF

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Publication number
TW200839862A
TW200839862A TW096144619A TW96144619A TW200839862A TW 200839862 A TW200839862 A TW 200839862A TW 096144619 A TW096144619 A TW 096144619A TW 96144619 A TW96144619 A TW 96144619A TW 200839862 A TW200839862 A TW 200839862A
Authority
TW
Taiwan
Prior art keywords
processing
space
pressure
low
sealing portion
Prior art date
Application number
TW096144619A
Other languages
English (en)
Chinese (zh)
Other versions
TWI362070B (https=
Inventor
Jiro Higashijima
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200839862A publication Critical patent/TW200839862A/zh
Application granted granted Critical
Publication of TWI362070B publication Critical patent/TWI362070B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW096144619A 2006-11-24 2007-11-23 Treatment apparatus, method of treating and recording medium TW200839862A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006317253A JP4907310B2 (ja) 2006-11-24 2006-11-24 処理装置、処理方法及び記録媒体

Publications (2)

Publication Number Publication Date
TW200839862A true TW200839862A (en) 2008-10-01
TWI362070B TWI362070B (https=) 2012-04-11

Family

ID=39429755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096144619A TW200839862A (en) 2006-11-24 2007-11-23 Treatment apparatus, method of treating and recording medium

Country Status (6)

Country Link
US (1) US8298344B2 (https=)
JP (1) JP4907310B2 (https=)
KR (1) KR100979978B1 (https=)
DE (1) DE112007002340T5 (https=)
TW (1) TW200839862A (https=)
WO (1) WO2008062826A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490973B (zh) * 2008-12-11 2015-07-01 諾菲勒斯系統公司 利用快速晶圓冷卻的氣流的最小接觸面積晶圓夾持

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4985183B2 (ja) * 2007-07-26 2012-07-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP5655735B2 (ja) * 2011-07-26 2015-01-21 東京エレクトロン株式会社 処理装置、処理方法及び記憶媒体
JP6305736B2 (ja) * 2013-11-20 2018-04-04 測位衛星技術株式会社 情報管理システム、データバンク装置、データの管理方法、データベースの管理方法、および、プログラム
JP5994821B2 (ja) * 2014-06-13 2016-09-21 ウシオ電機株式会社 デスミア処理装置およびデスミア処理方法
US10460955B2 (en) * 2014-08-25 2019-10-29 The United States Of America As Represented By The Secretary Of The Army Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems
JP6666793B2 (ja) * 2016-05-23 2020-03-18 大陽日酸株式会社 反応装置
JP6581644B2 (ja) * 2017-12-06 2019-09-25 ＣＳＧ Ｉｎｖｅｓｔｍｅｎｔｓ株式会社 密閉容器用蓋
JP7594976B2 (ja) * 2021-05-31 2024-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US20260066239A1 (en) * 2024-09-03 2026-03-05 Applied Materials, Inc. Plasma source with integrated chamber liner

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248022A (en) * 1990-11-28 1993-09-28 Tokyo Electron Limited Driving device having sealing mechanism
JP3078834B2 (ja) * 1990-11-28 2000-08-21 東京エレクトロン株式会社 駆動装置
JP3106172B2 (ja) * 1991-02-26 2000-11-06 東京エレクトロン株式会社 熱処理装置の封止構造
JPH0910709A (ja) * 1995-06-30 1997-01-14 Dainippon Screen Mfg Co Ltd 基板処理装置
US5820692A (en) * 1996-01-16 1998-10-13 Fsi Interntional Vacuum compatible water vapor and rinse process module
JP3794808B2 (ja) * 1998-01-12 2006-07-12 大日本スクリーン製造株式会社 基板処理装置
JPH11219925A (ja) * 1998-01-29 1999-08-10 Shin Etsu Handotai Co Ltd 多孔質焼結体を用いた耐熱性半導体製造治具の洗浄方法及びその乾燥方法
JP3953682B2 (ja) * 1999-06-02 2007-08-08 株式会社荏原製作所 ウエハ洗浄装置
JP4196532B2 (ja) 2000-09-28 2008-12-17 株式会社日立製作所 自動車用発電機および回転機の音質評価方法
US6647642B2 (en) * 2000-12-15 2003-11-18 Tokyo Electron Limited Liquid processing apparatus and method
JP3992488B2 (ja) * 2000-12-15 2007-10-17 東京エレクトロン株式会社 液処理装置および液処理方法
US6729041B2 (en) * 2000-12-28 2004-05-04 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2003224102A (ja) 2002-01-30 2003-08-08 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2003332322A (ja) * 2002-03-08 2003-11-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR100863782B1 (ko) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
KR20050019129A (ko) * 2002-06-13 2005-02-28 비오씨 에드워즈 인코포레이티드 기판 처리 장치 및 기판 처리 방법
KR100992803B1 (ko) * 2002-07-25 2010-11-09 도쿄엘렉트론가부시키가이샤 기판 처리 용기
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI490973B (zh) * 2008-12-11 2015-07-01 諾菲勒斯系統公司 利用快速晶圓冷卻的氣流的最小接觸面積晶圓夾持

Also Published As

Publication number Publication date
KR20080097402A (ko) 2008-11-05
KR100979978B1 (ko) 2010-09-03
JP2008130978A (ja) 2008-06-05
DE112007002340T5 (de) 2009-07-30
WO2008062826A1 (en) 2008-05-29
TWI362070B (https=) 2012-04-11
US20090260656A1 (en) 2009-10-22
US8298344B2 (en) 2012-10-30
JP4907310B2 (ja) 2012-03-28

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