TW200832756A - Optical semiconductor device and manufacturing method of optical semiconductor device - Google Patents

Optical semiconductor device and manufacturing method of optical semiconductor device Download PDF

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Publication number
TW200832756A
TW200832756A TW096137885A TW96137885A TW200832756A TW 200832756 A TW200832756 A TW 200832756A TW 096137885 A TW096137885 A TW 096137885A TW 96137885 A TW96137885 A TW 96137885A TW 200832756 A TW200832756 A TW 200832756A
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Taiwan
Prior art keywords
optical semiconductor
electrode
lead portion
semiconductor device
region
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TW096137885A
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English (en)
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TWI387139B (zh
Inventor
Kazuo Shimokawa
Yasunari Ukita
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Toshiba Kk
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Publication of TW200832756A publication Critical patent/TW200832756A/zh
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Publication of TWI387139B publication Critical patent/TWI387139B/zh

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description

200832756 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種具備光半導體元件之光半導體裝置及 該光半導體裝置之製造方法。 【先前技術】 光半導體裝置作為照明或顯示裝置等各種裝置之光源被 用於廣泛領域。此光半導體裝置具備有發光二極體（LED) 等光半導體元件、接合載置此光半導體元件並電性連接於 光半導體元件之第1引線部、及經由導線電性連接於此第i 引線部上之光半導體元件的第2引線部（例如參照專利文獻 1及專利文獻2)。向此等第〗引線部及第2引線部施加電 壓’向光半導體元件供給電力。 於光半導體元件之第1主面設有發光層，並於此發光層 上設有較第1主面更小之第i電極。此第11：極藉由焊料等 接合材料與第i引線部接合，光半導體元件設於^引線部 之載置面上。此外’於第i主面之相反面的第2主面設有導 連接用之第2電極。再者’光半導體元件藉由模塑樹脂 於此種光半導體裝置中 ^ ㈡涿部猎由沖壓加工等 :成’故第1引線部之載置面的平面度低。因&，為進行 =，等接合材料於料導體元件與第1?丨線部之載置面 =良好填充之接合’而必須增厚藉由接合材料形成 度，或除焊料等接合材料之外，還須供給焊料片 125342.doc 200832756 [專利文獻1]曰本專利特開2006-1 56538號公報 [專利文獻2]日本專利特開2006-66670號公報 【發明内容】 [發明所欲解決之問題]
然而’因第1引線部之載置面的平面度於每個光半導體 裝置產生偏差，且接合材料之供給量係配合平面度低之載 置面而設定，故於載置面之平面度高之情形，剩餘部分之 接合材料自光半導體元件與第！引線部之載置面之間露 出，並蠕升至光半導體元件之侧壁上。因光半導體元件藉 由發光層而分為正極和負極，故接合材料接觸光半導體元 件之側壁時，會產生短路不良。 本發明係鑒於上述而完成者，其目的在於提供一種可防 止因接合材料對光半導體元件蠕升而產生短路不良之光半 導體裝置及該光半導體裝置之製造方法。 [解決問題之技術手段] 本發明實施形態相關之第i特徵，係於光半導體裝置 中’包括光半導體元件，其具有設於^主面上之發光 層、設於發光層上並較第！主面更小之第i電極、及設於與 第1主#面不同之第2主面上的第2電極；第1引線部，其具有 接合第1電極之區域並較第i主面更小之接合區域、及形成 ㈣接於接合區域之外龍域的第】溝部，藉由接合材料 將弟1電極與接合區域接合’並電性連接於第】電極；及第 2引線°卩，其藉由連接材料電性連接於第2電極。 本發明實施形態相關之第2特徵，係於光半導體裝置之 125342.doc 200832756 製造方法中，包括以下步驟：於設有具有設於第丨主面上 之發光層、設於發光層上並較第〗主面更小之第1電極、及 設於與第1主面不同之第2主面上的第2電極之光半導體元 件的第1引線部接合第1電極的區域並鄰接於較第丨主面更 小之接合區域之外周區域形成第i溝部；藉由接合材料將 第1電極與接合區域接合，於第1引線部上設置光半導體元 件，並將第1引線部電性連接於第i電極；及藉由連接材料 將第2引線部電性連接於第i引線部上之光半導體元件的第 2電極。 [發明之效果] 若藉由本發明，則可防止因接合材料對光半導體元件蠕 升而產生短路不良。 【實施方式】 (第1實施形態） 參照圖1至圖5，就本發明之第i實施形態進行說明。 如圖1所示，本發明第1實施形態相關之光半導體裝置以 具備有放射光之光半導體元件2、經由接合材料3載置此光 半導體元件2並電性連接於此光半導體元件2之第i引線部 4、藉由連接材料5電性連接於此第丨引線部4上之光半導體 元件2的第2引線部6、為覆蓋第丨引線部4及第2引線部6之 模塑構件的基體7、及密封光半導體元件2之透光性構件 8 ° 光半導體元件2如圖2所示，具備有成為基體之導電性基 材2a、設於此導電性基材2a之第i主面M1上之n型半導體層 125342.doc 200832756 2b、設於此η型半導體層2b上之發光層2c、設於此發光層 2c上之p型半導體層2d、設於此p型半導體層2d上且較第1 主面Ml更小之第1電極2e、具有絕緣性並覆蓋半導體層 2b、2d及發光層2c之周圍的保護膜（純化膜）2f、及設於第！ 主面Ml相反面的第2主面M2上之第2電極2g。作為此光半 導體元件2，f列如使用發光二極體（LED)等。 第1引線部4及第2引線部6係用以向光半導體元件2供給 電力之一對引線端子。向此等第1引線部4及第2引線部6施 加電壓，從而向光半導體元件2供給電力。藉此，光半導 體元件2自η型半導體層2b與p型半導體層2d所挾持之發光 層2c放射光。 弟1引線部4如圖1、圖2及圖3所示，具有收納光半導體 元件2之凹部4a、接合光半導體元件2之第1電極2e的區域 並較第1主面Ml更小之接合區域ri、及形成於鄰接於接合 區域R1之外周區域R2的第1溝部4b。凹部4a例如形成為杯 形，即倒截錐形狀。 接合區域R1係於凹部4a之底面設為例如正方形狀之表面 區域。此接合區域R1之面積較光半導體元件2之第i主面 Ml的面積更小，較第1電極2e之接合面M3的面積更大。外 周區域R2係以包圍接合區域R1之方式設於凹部4&之底面的 表面區域。此外周區域R2之面積係自凹部乜之底面面積減 去接合區域R1之面積而付的面積。此外，第1溝部朴係複 數溝G1遍及外周區域R2，形成為例如格子狀之溝〇 1的集 合體。 125342.doc 200832756 此處，光半導體元件2其第1電極2e係藉由例如焊料等接 合材料3與第1引線部4之接合區域R1接合，設於第1引線部 4上，並電性連接於第1引線部4。再者，作為接合材料3， 例如使用AuSn共晶焊料等。此外，光半導體元件2其第2電 極2g藉由例如金導線等連接材料5電性連接於第2引線部 6 〇 再者’光半導體元件2之尺寸係1·〇χ1·〇χ〇·2(高度）mm3。 此光半導體元件2之發光層2 c的面積為0.9χ〇·9 mm2，第2電 極2g之面積為〇·8χ〇·8 mm2。此外，第1引線部4之凹部仏開 口直徑為2.5 mm，圓型之底面直徑為2·〇 mm，深度為〇 5 mm。接合區域！^之面積為〇 9x〇 9 mm2。第1溝部朴之溝 G1例如於正交之2方向以〇〇6 mm間距配置。溝之形狀 例如係深度為0·01 mm，寬度為〇〇1 mm之V字形狀。 基體7係具有將由光半導體元件2放射之光向外部反射之 反射面7a，並覆蓋第！引線部4及第2引線部6之模塑構件。 反射面7a以自内部向外部擴大之方式傾斜。此種基體了例 如藉由白色之模塑樹脂形成。作為模塑樹脂，例如使用聚 醯胺系樹脂等熱可塑性樹脂。 透光性構件8係設於第1引線部4之凹部仏内及基體7上並 密封光半導體元件2之構件。此透光性構件8具有用以放出 自光半V體元件2放射之光的放出面。此放出面8&係與 外部環境相接之露出面，並起作用作為放出由光半導體元 件2放射之光的光取出面。 透光丨生構件8例如藉由混合有粒子狀螢光體之螢光體 125342.doc 200832756 混合樹脂等透光性樹脂材料形成。作為透光性樹脂材料， 例如使用石夕樹脂等。Λ處，f光體係變換由光半導體元件 2放射之光的波長之物質，例如放出具有較光半導體元件2 之光的波長更長的波長之光。作為此螢光體，例如使用放 出黃色光之螢光體，或使用放出黃色光之螢光體及放出紅 色光之螢光體雙方。 於此種光半導體裝置1A中，若對第j引線部4及第2引線 部6施加電壓，對光半導體元件2供給電力，則光半導體元 件2放射光。此光之一部分通過透光牲構件8並保持原狀地 自放出面8a放出，其他部分藉由第i引線部4之凹部乜的側 壁或基體7之反射面7a反射而自放出面8a放出。此外，光 之一部分入射至透光性構件8所含有之螢光體。藉此，螢 光體受激勵而放射光。此光之一部分亦通過透光性構件8 亚自放出面8a放出，其他部分亦藉由第i引線部4之凹部乜 的側壁或基體7之反射面7a反射而自放出面“放出。如 此，藉由光半導體元件2放射之光與藉由以此光激勵之螢 光體放射之光混合，並自透光性構件8之放出面8a放出。 其次，就光半導體裝置1A之製造方法進行說明。 於光半導體裝置1A之製造步驟中，首先形成第i引線部4 及第2引線部6，如圖4所示，於第丨引線部4之鄰接於接合 區域R1的外周區域R2上形成第1溝部4b。其後，避開第i 引線部4之凹部4a並以覆蓋第i引線部4及第2引線部6之方 式形成基體7，如圖5所示，將光半導體元件2之電極“與 接合區域R1接合，將光半導體元件2設於第工引線部4上， 125342.doc •11- 200832756 並藉由連接材料5將此第1引線部4上之半導體元件2的第2 電極2g與第2引線部6電性連接，最後藉由透光性構件8密 封光半導體元件2。 詳述之，首先糟由冲孔加工由板金構件形成第〗引線部4 、 及第2引線部6。其後，藉由沖壓加工形成第1引線部4之凹 • 部4a，並如圖4所示，於此凹部4a之底面的外周區域化2加 工溝G1，藉此於外周區域R2形成第1溝部4b，並為獲得高 的平面度而沖壓凹部4a之底面。藉此，第！溝部仆形成於 _ 凹部蝕底面之鄰接於接合區域R1的外周區域R2。此時，接 合區域R1設置得較光半導體元件2之第1電極2〇的接合面 M3更大’較光半導體元件2之第1主面mi更小。 其次’於用以將第1引線部4及第2引線部6定位於特定位 置並使基體7成形之模具上安裝第1引線部4及第^引線部 6 ’並使用例如注模法，藉由白色模塑樹脂使基體7成形。 作為此白色模塑樹脂，例如使用聚鄰苯二甲醯胺等熱可塑 性樹脂。 其後，如圖5所示，於第i引線部4之接合區域R1的中央 载置焊料片3a。此焊料片3a例如藉由AuSn共晶焊料形成。 ‘ 焊料片3a之尺寸例如係300x300x25(厚度）μηι3。此外，如 圖5所示’於對第1引線部4載置光半導體元件2之前，於光 半導體元件2之第1電極2e上預先設置焊料膜3b。此焊料膜 b例如藉由AuSn共晶焊料形成。焊料膜3b之厚度例如係2 μιη。 藉由此種焊料片3a及焊料膜3b供給接合材料3。即，焊 125342.doc 12 - 200832756 料片h與焊料膜％熔為一體成為接合材料3。特別是焊料 片3a對應於平面度低、表面㈣度高之第⑺線部4，用於 無間隙地向光半導體元件2與第HI線部4之間填充焊料。 因此，供給之焊料量較接合所需之填充量更多。 其次，於N2(90%)+H2(10%)之還原環境下，將第ι引線部 4加熱至較共晶焊料之熔点（28〇。〇更高的溫度（例如 3日20 C) ’亚藉由晶片安裝器（未圖示）將光半導體元件由 焊料片3a載置（mount)於第！引線部4之接合區域幻上。藉 • 此，光半導體元件2之第1電極2e與第！引線部4之接合區域^ 接合’光半導體元件2設置於引線部4之凹部_底面。 此時，即使於已溶化之焊料自光半導體元件2與第】引線 部4之間露出之情形’露出之剩餘部分的焊料亦因毛細管 現象而濡濕擴展於第】溝部4b之各個溝〇1，不會蠕升至光 半導體元件2之侧壁。藉此’可於藉由接合材料靖光半導 體元件2與第i引線部4接合時，防止焊料對光半導體元件2 蠕升。 鲁 Λ處，載置於第i引線部4上之光半導體元件：，藉由施 加1〇〇 ms期間、〇·5Ν之載荷，於第i引線部4上接合。再 者，為確保光半導體元件2之焊料膜儿與焊料片h的良好 接合性，可於加壓後進行擦刷。此擦刷係藉由使載置第1 引線部4之筒夾微動而進行。擦刷係以筒夾以四方形之軌 跡微動的方式進行。此時，例如四方形之―邊（行程）為2〇〇 μπι ’筒夾的移動速度為10〇 gm/s。 再者作為光半導體元件2，例如使用藉由使3 5 〇 m a之 125342.doc 200832756 電流流動而得到45 1 m之光束的高輸出型光半導體元件2。 此光半導體元件2之導電性基材2a例如藉由SiC(碳化矽）形 成，發光層2c例如係發光為藍色之發光層。此外，第1引 線部4及弟2引線部6藉由厚度為1.5 mm之銅板形成。於此 等第1引線部4及第2引線部6之表面，以厚度為1 μιη的鎳、 厚度為1 μιη的銀分別電鍍。此外，接合材料3之厚度為2 μιη。基體7之尺寸為8·〇χ5·〇χ2·5(高度）mms。
其後，例如精由金導線等連接材料5，電性連接光半導 體元件2之第2電極2g與第2引線部6。最後，向第1引線部4 之凹邛4a及由基體7之反射面7a形成之凹部内填充矽樹 月曰，密封光半導體元件2 ^藉此，矽樹脂製透光性構件8設 於基體7,如圖】所示，光半導體裝置丨a完成。 再者，作為矽樹脂，例如使用以5〜1〇 wt%之濃度混入直 徑5〜20 μηι之螢光體的矽樹脂。螢光體例如係 BASiO4 ·· Eu2 +之組成的s〇SE類螢光體將波長彻⑽之 藍色光變換為波長57G⑽之黄色光。因此，藍色光與黃色 光自光半導體裝置1A放射，此等光經混合於視覺上得到白 此處，本實施之形態中’使用焊料片3a，對應於因第i 引線。P 4之載置面平面度或表面粗趟度的偏差而導致之焊 而，於可藉由增加焊料膜儿之厚度而供給充 , 月形，無需藉由焊料片3a進行焊料供給。即使 於增厚焊料膜3b之情形，自光半導體元件2與第i引線部4 之間露出之剩餘部分的焊料也因毛細管現象而漂濕擴展於 125342.doc •14· 200832756 二1。屢藉IT之各個溝01，+會罐升至光半I體元件2之側 立9 ，於藉由接合材料3將光半導體元件2與第1引線 接口 ^ ’可防止焊料對光半導體元件2蠕升。 如以上等日日 μ # — 月，右糟由本發明之第1實施形態，則因於鄰 接於第1引線部4之接合區域R1的外周區域R2形成第工溝部 2，故於糈由接合材料3將光半導體元件2與第1引線部4接 =時，自光半導體元件2與第1引線部4之間露出之剩餘部 分的接合材料3濡濕擴展於第1溝部4b之各個溝G1，接合材 料3不會蠕升至光半導體元件2之側壁。藉此，因可防止接 :材料3對光半導體元件2之側壁竭升，故可防止因接合材 料3之蠕升而產生短路不良。特別係接合區域以雖設置得 車乂光半導體元件2之第1主面Ml更小，但於相對於第i主面 M1之區域亦形成有各溝G1，故剩餘部分之接合材料3於到 達光半導體元件2侧壁之前流入各溝⑴内。藉此，可確實 防止接合材料3蠕升至光半導體元件2之側壁。 再者，因接合區域R1較第1電極2e之接合面M3更大，故 於與第1電極2e之接合面M3相對之區域不會形成溝〇1，因 此可提高光半導體元件2對第1引線部4之接合力。作為其 結果，可防止光半導體元件2自第1引線部4脫落，可提高 光半導體裝置1A之部件可靠性。 (第2實施形態) | 參照圖6及圖7，就本發明之第2實施形態進行説明。本 發明之第2實施形態中，就與第1實施形態不同之部分進行 説明。再者，於第2實施形態，對與第1實施形態中說明之 125342.doc -15- 200832756 並省略其說明（其他實施 部分相同的部分賦予同一符号 形態亦相同）。 如圖6及圖7所*，於本發明之第2實施形態中，第i引線 部4具有於接合區域以内與第i溝部娜開而形成之第2溝 部4c。此第2溝部4c設於接合區域以内，以免各溝仍與約 溝部4b之各溝G1連通。再者，第2溝部4e之面積例如為 〇·5χ〇·5 mm2。
光半導體裝置1A之製造步驟除^實施形態之製造步驟 外，還具有於接合區域R1内與第〖溝部仆離開而形成 部4c之步驟。^述之，於藉由沖壓加卫形成第i引線部*之 凹部4a後，藉由於此凹部4&之底面的外周區域以加工溝⑴ 而於外周區域R2形成第i溝部4b，同時，藉由於凹部乜底 面之接合區域R1加ji溝G2而於接合區域旧内形成第2溝部 4c，最後，為得到高平面度而沖壓凹部“之底面。其後之 製造步驟與第1實施形態相同。 如以上説明，若藉由本發明之第2實施形態，則可得到 與第1實施形態同樣之效果。再者，因於第〗引線部4之接 合區域Ri内與第i溝部4b離開而形成第2溝部乜，故於供給 焊料片3a作為接合材料3之情形，可抑制熔化之焊料片“ 濡濕擴展，於足以接合之焊料留存於光半導體元件2與第1 引線部4之間，故可抑制光半導體元件2與第丨引線部*之接 合不良的產生。作為其結果，可防止光半導體元件2自第工 引線部4脫落，可提高光半導體裝置丨八之部件可靠性。 再者，作為第1溝部4b及第2溝部4c之形成方法，例如可 125342.doc -16- 200832756 使用將並列之溝加工用的複數沖頭—次打進凹部牝之底 面，其後使之例如旋轉90。並再一次打進凹部钝之底面: 同時形成第1溝部4b及第2溝部4c之方法。若為此方法，則 與使用排列為格子狀之溝加工用複數沖頭的情形相比，可 使各沖頭排列單純化，故可容易地進行工具之維護。再 者’可減弱打進沖頭時之力量，除此之外，可防止各溝 Gl、G2之交差部分壓壞。 (第3實施形態） • 參照圖8及圖9，就本發明之第3實施形態進行說明。於 本發明之第3實施形態，就與第〗實施形態不同之部分進行 說明。 如圖8及圖9所示，於本發明第3實施形態相關之光半導 體裝置1B中’弟1引線部4係不具有凹部4 a之平坦框架，第 1引線部4之外周區域R2以包圍接合區域R1之方式設為框 狀。 如以上説明，若藉由本發明之第3實施形態，則即使是 • 前述之構成，亦可得到與第1實施形態相同之效果。 (其他實施形態） 再者，本發明並未限於前述實施形態，於不脫離其主旨 之範圍内可進行各種變更。 例如，於前述之實施形態中，雖列舉有各種數值，但其 等數值為例示，並未限定。 此外，於前述之實施形態中，將接合區域R1設為正方形 狀’但未限於此，例如亦可設為圓形，其形狀不受限定。 125342.doc -17- 200832756 受限定。 雖將接合區域R1設置得較 例如亦可設置得較第丨電極 同樣’外周區域R2之形狀亦不 此外’於前述之實施形態中 第1電極2e更大，但未限於此， 2 e更小。 此外’於前述之實施形態中，雖於正交之2方向形成溝 G1作為第i溝部4b，但未限於此，例如亦可於ι方向或3方 白以上形成溝G1，此外亦可不正交地形成。
此外，於前述之實施形態中，將溝G1形成為¥字形狀， 但未限於此，例如亦可形成爲半圓形狀或四角形狀。 最後，於前述之實施形態中，使用第丨主面河丨之相反面 作為δ又置第2電極2g之第2主面M2，但未限於此，例如亦 可使用導電性基材2a之側壁的一面，使用與第i主面M1* 同之面即可。 【圖式簡單說明】 圖1係本發明第1實施形態相關之光半導體裝置概略構成 的截面圖。 圖2係擴大顯示圖1所示之光半導體裝置具備的光半導體 元件與第1引線部之接合部分的截面圖。 圖3係顯示圖1所示之光半導體裝置具備之第1引線部及 第2引線部的平面圖。 圖4係說明圖1所示之光半導體裝置之製造方法的第1步 鱗截面圖。 圖5係第2步驟截面圖。 圖6係擴大顯示本發明第2實施形態相關之光半導體裝置 125342.doc -18- 200832756 具備之光半導體元件與第1引線部之接合部分的截面圖。 圖7係顯示本發明第2實施形態相關之光半導體裝置具備 之第1引線部及第2引線部的平面圖。 圖8係顯示本發明第3實施形態相關之光半導體裝置概略 構成的截面圖。 圖9係顯示圖8所示之光半導體裝置具備之第1引線部及 第2引線部的平面圖。 【主要元件符號之說明】
ΙΑ，1B 光半導體裝置 2 光半導體元件 2c 發光層 2e 第1電極 2g 第2電極 3 接合材料 4 第1引線部 4b 第1溝部 4c 第2溝部 5 連接材料 6 第2引線部 Ml 第1主面 M2 第2主面 M3 接合面 R1 接合區域 R2 外周區域 125342.doc -19-

Claims (1)

  1. 200832756 十、申請專利範圍： 1 ·種光半導體裝置，其特徵在於包括： 料導體元件，其具有設於第^面上之發光層、設 於前述發光層上並較前述第丨主面更小的第丨電極、及設 於=前述第1主面不同之第2主面上之第2電極； 第引線°卩，其具有接合前述第1電極之區域且較前述 第1主面更小之接合區域、及形成於鄰接於前述接合區 域之外周區域的第1溝部，藉由接合材料將前述第丄電極 • 與二述接合區域接合，並電性連接於前述第】電極；及 第2引線部，其藉由連接材料電性連接於前述第2電 極。 2· ^請求項丨之光半導體裝置’其中前述接合區域較前述 第1電極之接合面更大。
    2請求項1之光半導體裝置，其中前述第i引線部具有於 丽述接合區域内與前述第！溝部離開而形成之第2溝部。 一種光半導體裝置之製造方法，其特徵在於包括以下步 驟： 於設有具有設於第1主面上之發光層、設於前述發光 層上並較前述第丨主面更小之第i電極、及設於與前4第 1主面不同之第2主面上之第2電極之光半導體元件的第i 引線部接合前述第丨電極之區域並鄰接於較前述第丨主面 更小的接合區域之外周區域形成第1溝部； 藉由接合材料將前述第丨電極與前述接合區域接合， 於前述第1引線部上設置前述光半導體元件，並將前述 125342.doc 200832756 第1引線部電性連接於前述第1電極；及 精由連接材料將第2引線部電性連接於前述第1引線部 上之前述光半導體元件的前述第2電極。 5·如請求項4之光半導體裝置之製造方法，其中於形成前 . 述第1溝部之步驟中，將前述接合區域設置得較前述第1 電極之接合面更大。 6·如請求項4之光半導體裝置之製造方法，其中包括於前 述接合區域内與前述第1溝部離開而形成第2溝部之步
    125342.doc
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