TW200832718A - Semiconductor device and method of manufacturing a semiconductor device - Google Patents

Semiconductor device and method of manufacturing a semiconductor device Download PDF

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Publication number
TW200832718A
TW200832718A TW096135728A TW96135728A TW200832718A TW 200832718 A TW200832718 A TW 200832718A TW 096135728 A TW096135728 A TW 096135728A TW 96135728 A TW96135728 A TW 96135728A TW 200832718 A TW200832718 A TW 200832718A
Authority
TW
Taiwan
Prior art keywords
film
layer
semiconductor device
insulator
coating film
Prior art date
Application number
TW096135728A
Other languages
English (en)
Chinese (zh)
Inventor
Tadahiro Ohmi
Koichi Sugitani
Original Assignee
Univ Tohoku Nat Univ Corp
Zeon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Tohoku Nat Univ Corp, Zeon Corp filed Critical Univ Tohoku Nat Univ Corp
Publication of TW200832718A publication Critical patent/TW200832718A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096135728A 2006-09-22 2007-09-26 Semiconductor device and method of manufacturing a semiconductor device TW200832718A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006257848 2006-09-22
JP2006313492A JP2008103653A (ja) 2006-09-22 2006-11-20 半導体装置及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200832718A true TW200832718A (en) 2008-08-01

Family

ID=39200608

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135728A TW200832718A (en) 2006-09-22 2007-09-26 Semiconductor device and method of manufacturing a semiconductor device

Country Status (6)

Country Link
US (1) US20090278134A1 (https=)
EP (1) EP2088629A1 (https=)
JP (1) JP2008103653A (https=)
KR (1) KR20090071538A (https=)
TW (1) TW200832718A (https=)
WO (1) WO2008035786A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282964B2 (en) 2017-12-07 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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CN101807004B (zh) * 2010-03-08 2012-07-11 彩虹集团电子股份有限公司 一种用于彩色显像管网版生产的工作版的制做方法
KR101637636B1 (ko) * 2010-12-27 2016-07-07 샤프 가부시키가이샤 액티브 매트릭스 기판 및 그 제조방법, 그리고 표시패널
US8987071B2 (en) * 2011-12-21 2015-03-24 National Applied Research Laboratories Thin film transistor and fabricating method
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103681870B (zh) * 2012-09-13 2016-12-21 北京京东方光电科技有限公司 阵列基板及其制造方法
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
JP6926939B2 (ja) * 2017-10-23 2021-08-25 東京エレクトロン株式会社 半導体装置の製造方法

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JPH0812539B2 (ja) * 1985-01-29 1996-02-07 株式会社東芝 表示装置及びその製造方法
JPH03159174A (ja) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd 液晶表示装置
JP3173926B2 (ja) * 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
JPH10268343A (ja) * 1997-03-24 1998-10-09 Sharp Corp 液晶表示装置およびその製造方法
JP2001188343A (ja) 1999-12-28 2001-07-10 Nippon Zeon Co Ltd 感光性樹脂組成物
US6952036B2 (en) * 2001-02-19 2005-10-04 International Business Machines Corporation Thin-film transistor structure, method for manufacturing the thin-film transistor structure, and display device using the thin-film transistor structure
JP2002296780A (ja) 2001-03-30 2002-10-09 Nippon Zeon Co Ltd 感光性樹脂組成物
JP2002353167A (ja) * 2001-05-29 2002-12-06 Sharp Corp 金属配線基板及び金属配線基板の製造方法並びに反射型液晶表示装置用金属配線基板
US6835503B2 (en) * 2002-04-12 2004-12-28 Micron Technology, Inc. Use of a planarizing layer to improve multilayer performance in extreme ultra-violet masks
JP2003318401A (ja) * 2002-04-22 2003-11-07 Seiko Epson Corp デバイスの製造方法、デバイス、表示装置、および電子機器
WO2004110117A1 (ja) 2003-06-04 2004-12-16 Zeon Corporation 基板及びその製造方法
US6969634B2 (en) * 2003-09-24 2005-11-29 Lucent Technologies Inc. Semiconductor layers with roughness patterning
JP4554344B2 (ja) 2003-12-02 2010-09-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4286116B2 (ja) 2003-12-09 2009-06-24 株式会社リコー 画像形成用トナー、現像剤及び画像形成装置
US20070209200A1 (en) * 2004-03-31 2007-09-13 Tadahiro Ohmi Circuit Board, Method Of Manufacturing Circuit Board, And Display Device Having Circuit Board
US7864398B2 (en) * 2004-06-08 2011-01-04 Gentex Corporation Electro-optical element including metallic films and methods for applying the same
JP4543385B2 (ja) * 2005-03-15 2010-09-15 日本電気株式会社 液晶表示装置の製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11282964B2 (en) 2017-12-07 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11784259B2 (en) 2017-12-07 2023-10-10 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device

Also Published As

Publication number Publication date
US20090278134A1 (en) 2009-11-12
KR20090071538A (ko) 2009-07-01
WO2008035786A1 (en) 2008-03-27
JP2008103653A (ja) 2008-05-01
EP2088629A1 (en) 2009-08-12

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