TW200827891A - Thin film transistor array substrate and method of fabricating the same - Google Patents

Thin film transistor array substrate and method of fabricating the same Download PDF

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Publication number
TW200827891A
TW200827891A TW096123307A TW96123307A TW200827891A TW 200827891 A TW200827891 A TW 200827891A TW 096123307 A TW096123307 A TW 096123307A TW 96123307 A TW96123307 A TW 96123307A TW 200827891 A TW200827891 A TW 200827891A
Authority
TW
Taiwan
Prior art keywords
passive film
electrode
gate
region
insulating layer
Prior art date
Application number
TW096123307A
Other languages
English (en)
Chinese (zh)
Inventor
Hong-Kee Chin
Sang-Gab Kim
Min-Seok Oh
Joo-Han Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200827891A publication Critical patent/TW200827891A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW096123307A 2006-06-30 2007-06-27 Thin film transistor array substrate and method of fabricating the same TW200827891A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060060246A KR101201972B1 (ko) 2006-06-30 2006-06-30 박막 트랜지스터 어레이 기판 및 이의 제조 방법

Publications (1)

Publication Number Publication Date
TW200827891A true TW200827891A (en) 2008-07-01

Family

ID=38473917

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096123307A TW200827891A (en) 2006-06-30 2007-06-27 Thin film transistor array substrate and method of fabricating the same

Country Status (6)

Country Link
US (1) US20080042133A1 (enExample)
EP (1) EP1873833A1 (enExample)
JP (1) JP5395336B2 (enExample)
KR (1) KR101201972B1 (enExample)
CN (1) CN101097928B (enExample)
TW (1) TW200827891A (enExample)

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TWI806796B (zh) * 2022-11-01 2023-06-21 友達光電股份有限公司 薄膜電晶體

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JP5380037B2 (ja) * 2007-10-23 2014-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101048927B1 (ko) * 2008-05-21 2011-07-12 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR20100069935A (ko) * 2008-12-17 2010-06-25 삼성전자주식회사 박막 트랜지스터 어레이 기판 및 이의 제조 방법
KR101569766B1 (ko) * 2009-01-29 2015-11-17 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
TW201037436A (en) * 2009-04-10 2010-10-16 Au Optronics Corp Pixel unit and fabricating method thereof
KR101648806B1 (ko) * 2009-07-20 2016-08-31 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
JPWO2011016286A1 (ja) * 2009-08-04 2013-01-10 シャープ株式会社 アクティブマトリックス基板、液晶表示パネル、液晶表示装置およびアクティブマトリックス基板の製造方法
WO2011016287A1 (ja) * 2009-08-04 2011-02-10 シャープ株式会社 アクティブマトリックス基板、液晶表示パネル、液晶表示装置およびアクティブマトリックス基板の製造方法
KR20120028050A (ko) * 2010-09-14 2012-03-22 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
CN102637634B (zh) * 2011-08-12 2014-02-26 北京京东方光电科技有限公司 一种阵列基板及其制作方法、显示装置
KR101980765B1 (ko) 2012-12-26 2019-08-28 엘지디스플레이 주식회사 에프에프에스 방식 액정표시장치용 어레이기판 및 그 제조방법
KR102232539B1 (ko) * 2013-11-13 2021-03-29 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 표시 기판 및 박막 트랜지스터의 제조 방법
CN104241296B (zh) * 2014-08-21 2017-12-08 京东方科技集团股份有限公司 一种阵列基板及其制作方法和显示装置
KR102411154B1 (ko) 2015-07-09 2022-06-21 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
CN108573928B (zh) * 2018-04-13 2020-12-29 Tcl华星光电技术有限公司 一种tft阵列基板的制备方法及tft阵列基板、显示面板
US12477825B2 (en) 2021-04-23 2025-11-18 E Ink Holdings Inc. Electronic device and wiring structure thereof
CN114023699B (zh) * 2021-10-29 2022-09-27 北海惠科光电技术有限公司 阵列基板的制备方法及其阵列基板

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
JP2008015510A (ja) 2008-01-24
JP5395336B2 (ja) 2014-01-22
KR20080001847A (ko) 2008-01-04
US20080042133A1 (en) 2008-02-21
CN101097928A (zh) 2008-01-02
CN101097928B (zh) 2012-10-10
EP1873833A1 (en) 2008-01-02
KR101201972B1 (ko) 2012-11-15

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