TW200824151A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting device Download PDFInfo
- Publication number
- TW200824151A TW200824151A TW096126033A TW96126033A TW200824151A TW 200824151 A TW200824151 A TW 200824151A TW 096126033 A TW096126033 A TW 096126033A TW 96126033 A TW96126033 A TW 96126033A TW 200824151 A TW200824151 A TW 200824151A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- electrode
- semiconductor
- current
- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 214
- 238000000605 extraction Methods 0.000 claims description 44
- 230000002093 peripheral effect Effects 0.000 claims description 30
- 239000006185 dispersion Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 16
- 238000009826 distribution Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000005253 cladding Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 3
- AJZRPMVVFWWBIW-UHFFFAOYSA-N [Au].[Bi] Chemical compound [Au].[Bi] AJZRPMVVFWWBIW-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910017401 Au—Ge Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910007264 Si2H6 Inorganic materials 0.000 description 1
- QPQJADLZGGDKIV-UHFFFAOYSA-N [Nb].[Ti].[Au] Chemical compound [Nb].[Ti].[Au] QPQJADLZGGDKIV-UHFFFAOYSA-N 0.000 description 1
- GZRDJPGWGMWUQZ-UHFFFAOYSA-N [Re].[Au] Chemical compound [Re].[Au] GZRDJPGWGMWUQZ-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- -1 diethane ruthenium Chemical compound 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- ALCDAWARCQFJBA-UHFFFAOYSA-N ethylselanylethane Chemical compound CC[Se]CC ALCDAWARCQFJBA-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
Landscapes
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006243691A JP2008066554A (ja) | 2006-09-08 | 2006-09-08 | 半導体発光素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200824151A true TW200824151A (en) | 2008-06-01 |
| TWI357162B TWI357162B (enExample) | 2012-01-21 |
Family
ID=39288981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096126033A TW200824151A (en) | 2006-09-08 | 2007-07-17 | Semiconductor light-emitting device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2008066554A (enExample) |
| KR (1) | KR100914110B1 (enExample) |
| TW (1) | TW200824151A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424587B (zh) * | 2008-06-30 | 2014-01-21 | Luxtaltek Corp | Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures |
| CN103887418B (zh) * | 2012-12-22 | 2017-06-30 | 赛恩倍吉科技顾问（深圳）有限公司 | 发光芯片组合 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101164663B1 (ko) * | 2007-12-28 | 2012-07-12 | 니치아 카가쿠 고교 가부시키가이샤 | 반도체 발광 소자 및 그 제조방법 |
| JP5150367B2 (ja) | 2008-05-27 | 2013-02-20 | 東芝ディスクリートテクノロジー株式会社 | 発光装置及びその製造方法 |
| JP5687858B2 (ja) * | 2010-07-30 | 2015-03-25 | スタンレー電気株式会社 | 半導体発光装置 |
| JP5736930B2 (ja) * | 2011-04-19 | 2015-06-17 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP2013183032A (ja) * | 2012-03-02 | 2013-09-12 | Toshiba Corp | 半導体発光素子 |
| JP6287317B2 (ja) * | 2013-02-28 | 2018-03-07 | 日亜化学工業株式会社 | 半導体発光素子 |
| JP2014229648A (ja) * | 2013-05-20 | 2014-12-08 | シャープ株式会社 | 半導体発光素子 |
| WO2015156123A1 (ja) * | 2014-04-07 | 2015-10-15 | 旭化成イーマテリアルズ株式会社 | 光学基材及びその製造方法、並びに、積層体、レジスト剥離液 |
| JP7413941B2 (ja) * | 2020-07-03 | 2024-01-16 | 信越半導体株式会社 | 接合型半導体素子及び接合型半導体素子の製造方法 |
| JP7354943B2 (ja) | 2020-07-03 | 2023-10-03 | 信越半導体株式会社 | 接合型半導体受光素子及び接合型半導体受光素子の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818100A (ja) * | 1994-06-24 | 1996-01-19 | Showa Denko Kk | 化合物半導体発光ダイオード |
| DE19943406C2 (de) | 1999-09-10 | 2001-07-19 | Osram Opto Semiconductors Gmbh | Lichtemissionsdiode mit Oberflächenstrukturierung |
| US7102175B2 (en) * | 2003-04-15 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device and method for fabricating the same |
| JP2006049855A (ja) * | 2004-06-28 | 2006-02-16 | Matsushita Electric Ind Co Ltd | 半導体発光素子およびその製造方法 |
| JP4371029B2 (ja) * | 2004-09-29 | 2009-11-25 | サンケン電気株式会社 | 半導体発光素子およびその製造方法 |
-
2006
- 2006-09-08 JP JP2006243691A patent/JP2008066554A/ja active Pending
-
2007
- 2007-07-17 TW TW096126033A patent/TW200824151A/zh not_active IP Right Cessation
- 2007-08-23 KR KR1020070084788A patent/KR100914110B1/ko not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI424587B (zh) * | 2008-06-30 | 2014-01-21 | Luxtaltek Corp | Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures |
| CN103887418B (zh) * | 2012-12-22 | 2017-06-30 | 赛恩倍吉科技顾问（深圳）有限公司 | 发光芯片组合 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100914110B1 (ko) | 2009-08-27 |
| KR20080023116A (ko) | 2008-03-12 |
| TWI357162B (enExample) | 2012-01-21 |
| JP2008066554A (ja) | 2008-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |