JP2008066554A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
JP2008066554A
JP2008066554A JP2006243691A JP2006243691A JP2008066554A JP 2008066554 A JP2008066554 A JP 2008066554A JP 2006243691 A JP2006243691 A JP 2006243691A JP 2006243691 A JP2006243691 A JP 2006243691A JP 2008066554 A JP2008066554 A JP 2008066554A
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JP
Japan
Prior art keywords
electrode
semiconductor
semiconductor layer
light emitting
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006243691A
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English (en)
Japanese (ja)
Other versions
JP2008066554A5 (enExample
Inventor
Koji Otsuka
康ニ 大塚
Yoshihiko Uchida
良彦 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2006243691A priority Critical patent/JP2008066554A/ja
Priority to TW096126033A priority patent/TW200824151A/zh
Priority to KR1020070084788A priority patent/KR100914110B1/ko
Publication of JP2008066554A publication Critical patent/JP2008066554A/ja
Publication of JP2008066554A5 publication Critical patent/JP2008066554A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2006243691A 2006-09-08 2006-09-08 半導体発光素子 Pending JP2008066554A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006243691A JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子
TW096126033A TW200824151A (en) 2006-09-08 2007-07-17 Semiconductor light-emitting device
KR1020070084788A KR100914110B1 (ko) 2006-09-08 2007-08-23 반도체 발광 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006243691A JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子

Publications (2)

Publication Number Publication Date
JP2008066554A true JP2008066554A (ja) 2008-03-21
JP2008066554A5 JP2008066554A5 (enExample) 2010-08-26

Family

ID=39288981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006243691A Pending JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子

Country Status (3)

Country Link
JP (1) JP2008066554A (enExample)
KR (1) KR100914110B1 (enExample)
TW (1) TW200824151A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009084670A1 (ja) * 2007-12-28 2009-07-09 Nichia Corporation 半導体発光素子およびその製造方法
JP2009289801A (ja) * 2008-05-27 2009-12-10 Toshiba Discrete Technology Kk 発光装置及びその製造方法
JP2012033695A (ja) * 2010-07-30 2012-02-16 Stanley Electric Co Ltd 半導体発光装置
JP2012227311A (ja) * 2011-04-19 2012-11-15 Nichia Chem Ind Ltd 半導体発光素子
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
JP2014195055A (ja) * 2013-02-28 2014-10-09 Nichia Chem Ind Ltd 半導体発光素子
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
WO2015156123A1 (ja) * 2014-04-07 2015-10-15 旭化成イーマテリアルズ株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液
US20230215976A1 (en) * 2020-07-03 2023-07-06 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor device and method for manufacturing bonded semiconductor device
US12438101B2 (en) 2020-07-03 2025-10-07 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424587B (zh) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
CN103887418B (zh) * 2012-12-22 2017-06-30 赛恩倍吉科技顾问（深圳）有限公司 发光芯片组合

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818100A (ja) * 1994-06-24 1996-01-19 Showa Denko Kk 化合物半導体発光ダイオード
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19943406C2 (de) 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
US7102175B2 (en) * 2003-04-15 2006-09-05 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818100A (ja) * 1994-06-24 1996-01-19 Showa Denko Kk 化合物半導体発光ダイオード
JP2006100569A (ja) * 2004-09-29 2006-04-13 Sanken Electric Co Ltd 半導体発光素子およびその製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009084670A1 (ja) * 2007-12-28 2009-07-09 Nichia Corporation 半導体発光素子およびその製造方法
US9159868B2 (en) 2007-12-28 2015-10-13 Nichia Corporation Method for manufacturing semiconductor light emitting device
US8883529B2 (en) 2007-12-28 2014-11-11 Nichia Corporation Method for manufacturing semiconductor light emitting device
US8552445B2 (en) 2007-12-28 2013-10-08 Nichia Corporation Semiconductor light emitting device and method for manufacturing the same
US8482024B2 (en) 2008-05-27 2013-07-09 Kabushiki Kaisha Toshiba Light emitting device and method for manufacturing same
US8963194B2 (en) 2008-05-27 2015-02-24 Kabushiki Kaisha Toshiba Light emitting device
JP2009289801A (ja) * 2008-05-27 2009-12-10 Toshiba Discrete Technology Kk 発光装置及びその製造方法
JP2012033695A (ja) * 2010-07-30 2012-02-16 Stanley Electric Co Ltd 半導体発光装置
JP2012227311A (ja) * 2011-04-19 2012-11-15 Nichia Chem Ind Ltd 半導体発光素子
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
JP2014195055A (ja) * 2013-02-28 2014-10-09 Nichia Chem Ind Ltd 半導体発光素子
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
WO2015156123A1 (ja) * 2014-04-07 2015-10-15 旭化成イーマテリアルズ株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液
JPWO2015156123A1 (ja) * 2014-04-07 2017-04-13 旭化成株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液
US20230215976A1 (en) * 2020-07-03 2023-07-06 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor device and method for manufacturing bonded semiconductor device
US12438101B2 (en) 2020-07-03 2025-10-07 Shin-Etsu Handotai Co., Ltd. Bonded semiconductor light-receiving device and method for manufacturing bonded semiconductor light-receiving device

Also Published As

Publication number Publication date
KR100914110B1 (ko) 2009-08-27
KR20080023116A (ko) 2008-03-12
TWI357162B (enExample) 2012-01-21
TW200824151A (en) 2008-06-01

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